CH600578A5 - - Google Patents
Info
- Publication number
- CH600578A5 CH600578A5 CH1208274A CH1208274A CH600578A5 CH 600578 A5 CH600578 A5 CH 600578A5 CH 1208274 A CH1208274 A CH 1208274A CH 1208274 A CH1208274 A CH 1208274A CH 600578 A5 CH600578 A5 CH 600578A5
- Authority
- CH
- Switzerland
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1208274A CH600578A5 (de) | 1974-09-05 | 1974-09-05 | |
US05/607,922 US4038580A (en) | 1974-09-05 | 1975-08-26 | Electro-luminescent diode |
DE2538248A DE2538248B2 (de) | 1974-09-05 | 1975-08-28 | Elektrolumineszenz-Diode und Verfahren zu ihrer Herstellung |
JP10755975A JPS5152290A (de) | 1974-09-05 | 1975-09-04 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1208274A CH600578A5 (de) | 1974-09-05 | 1974-09-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH600578A5 true CH600578A5 (de) | 1978-06-15 |
Family
ID=4379672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1208274A CH600578A5 (de) | 1974-09-05 | 1974-09-05 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4038580A (de) |
JP (1) | JPS5152290A (de) |
CH (1) | CH600578A5 (de) |
DE (1) | DE2538248B2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5376692A (en) * | 1976-12-18 | 1978-07-07 | Mitsubishi Electric Corp | Semiconductor light emitting device |
DE2755433C2 (de) * | 1977-12-13 | 1986-09-25 | Telefunken electronic GmbH, 7100 Heilbronn | Strahlungsemittierende Halbleiterdiode |
JPS6038036B2 (ja) * | 1979-04-23 | 1985-08-29 | 松下電器産業株式会社 | 電場発光素子 |
DE2949245A1 (de) * | 1979-12-07 | 1981-06-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Lichtemittierende diode |
US4782028A (en) * | 1987-08-27 | 1988-11-01 | Santa Barbara Research Center | Process methodology for two-sided fabrication of devices on thinned silicon |
JP3526058B2 (ja) | 1992-08-19 | 2004-05-10 | セイコーインスツルメンツ株式会社 | 光弁用半導体装置 |
US5633176A (en) * | 1992-08-19 | 1997-05-27 | Seiko Instruments Inc. | Method of producing a semiconductor device for a light valve |
US6177969B1 (en) * | 1997-03-21 | 2001-01-23 | Canon Kabushiki Kaisha | Matrix substrate and liquid crystal display device utilizing the same in which a conductive film in an aperture region opposes the side the switching elements are on |
US6429460B1 (en) | 2000-09-28 | 2002-08-06 | United Epitaxy Company, Ltd. | Highly luminous light emitting device |
DE10054966A1 (de) * | 2000-11-06 | 2002-05-16 | Osram Opto Semiconductors Gmbh | Bauelement für die Optoelektronik |
US6657237B2 (en) * | 2000-12-18 | 2003-12-02 | Samsung Electro-Mechanics Co., Ltd. | GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same |
JP3910817B2 (ja) * | 2000-12-19 | 2007-04-25 | ユーディナデバイス株式会社 | 半導体受光装置 |
US7233028B2 (en) * | 2001-02-23 | 2007-06-19 | Nitronex Corporation | Gallium nitride material devices and methods of forming the same |
CN105940505A (zh) * | 2014-02-06 | 2016-09-14 | 皇家飞利浦有限公司 | 具有结构化衬底的发光二极管 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3283207A (en) * | 1963-05-27 | 1966-11-01 | Ibm | Light-emitting transistor system |
US3667117A (en) * | 1969-02-28 | 1972-06-06 | Corning Glass Works | Electroluminescent diode configuration and method of forming the same |
JPS5310840B2 (de) * | 1972-05-04 | 1978-04-17 | ||
JPS5114439B2 (de) * | 1972-05-15 | 1976-05-10 | ||
US3774021A (en) * | 1972-05-25 | 1973-11-20 | Bell Telephone Labor Inc | Light emitting device |
US3780357A (en) * | 1973-02-16 | 1973-12-18 | Hewlett Packard Co | Electroluminescent semiconductor display apparatus and method of fabricating the same |
US3936855A (en) * | 1974-08-08 | 1976-02-03 | International Telephone And Telegraph Corporation | Light-emitting diode fabrication process |
-
1974
- 1974-09-05 CH CH1208274A patent/CH600578A5/xx not_active IP Right Cessation
-
1975
- 1975-08-26 US US05/607,922 patent/US4038580A/en not_active Expired - Lifetime
- 1975-08-28 DE DE2538248A patent/DE2538248B2/de not_active Withdrawn
- 1975-09-04 JP JP10755975A patent/JPS5152290A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5152290A (de) | 1976-05-08 |
US4038580A (en) | 1977-07-26 |
DE2538248A1 (de) | 1976-03-25 |
DE2538248B2 (de) | 1978-09-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |