DE10085017T1 - Datenpfad für Hochleistungs-Mustergenerator - Google Patents

Datenpfad für Hochleistungs-Mustergenerator

Info

Publication number
DE10085017T1
DE10085017T1 DE10085017T DE10085017T DE10085017T1 DE 10085017 T1 DE10085017 T1 DE 10085017T1 DE 10085017 T DE10085017 T DE 10085017T DE 10085017 T DE10085017 T DE 10085017T DE 10085017 T1 DE10085017 T1 DE 10085017T1
Authority
DE
Germany
Prior art keywords
high performance
data path
pattern generator
performance pattern
generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10085017T
Other languages
English (en)
Other versions
DE10085017B4 (de
Inventor
Torbjoern Sandstroem
Anders Thuren
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micronic Laser Systems AB
Original Assignee
Micronic Laser Systems AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micronic Laser Systems AB filed Critical Micronic Laser Systems AB
Publication of DE10085017T1 publication Critical patent/DE10085017T1/de
Application granted granted Critical
Publication of DE10085017B4 publication Critical patent/DE10085017B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S707/00—Data processing: database and file management or data structures
    • Y10S707/99931—Database or file accessing
    • Y10S707/99937—Sorting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S707/00—Data processing: database and file management or data structures
    • Y10S707/99941—Database schema or data structure
    • Y10S707/99942—Manipulating data structure, e.g. compression, compaction, compilation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Image Processing (AREA)
DE10085017T 1999-09-09 2000-09-08 Datenpfad für Hochleistungs-Mustergenerator Expired - Lifetime DE10085017B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9903243-5 1999-09-09
SE9903243A SE516914C2 (sv) 1999-09-09 1999-09-09 Metoder och rastrerare för högpresterande mönstergenerering
PCT/SE2000/001749 WO2001018606A1 (en) 1999-09-09 2000-09-08 Data path for high performance pattern generator

Publications (2)

Publication Number Publication Date
DE10085017T1 true DE10085017T1 (de) 2002-10-24
DE10085017B4 DE10085017B4 (de) 2011-08-11

Family

ID=20416954

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10085017T Expired - Lifetime DE10085017B4 (de) 1999-09-09 2000-09-08 Datenpfad für Hochleistungs-Mustergenerator

Country Status (8)

Country Link
US (2) US6717097B1 (de)
JP (1) JP2003508825A (de)
KR (1) KR100748767B1 (de)
CN (1) CN1203376C (de)
AU (1) AU7566400A (de)
DE (1) DE10085017B4 (de)
SE (1) SE516914C2 (de)
WO (1) WO2001018606A1 (de)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9800665D0 (sv) 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
JP4273291B2 (ja) * 2001-08-17 2009-06-03 株式会社オーク製作所 多重露光描画装置および多重露光描画方法
JP4324645B2 (ja) * 2001-08-21 2009-09-02 株式会社オーク製作所 多重露光描画装置および多重露光描画方法
US6950194B2 (en) * 2001-12-07 2005-09-27 Micronic Laser Systems Ab Alignment sensor
US7106490B2 (en) * 2001-12-14 2006-09-12 Micronic Laser Systems Ab Methods and systems for improved boundary contrast
SE0200547D0 (sv) 2002-02-25 2002-02-25 Micronic Laser Systems Ab An image forming method and apparatus
SE0200864D0 (sv) * 2002-03-21 2002-03-21 Micronic Laser Systems Ab Method and apparatus for printing large data flows
DE10242142A1 (de) * 2002-09-03 2004-03-25 Kleo Halbleitertechnik Gmbh & Co Kg Verfahren und Vorrichtung zum Herstellen von belichteten Strukturen
US7365743B1 (en) * 2002-10-08 2008-04-29 Adobe Systems Incorporated Assignments for parallel rasterization
JP5112617B2 (ja) 2002-10-25 2013-01-09 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフィシステム
SE0300516D0 (sv) * 2003-02-28 2003-02-28 Micronic Laser Systems Ab SLM direct writer
AU2004241602B2 (en) 2003-05-20 2008-05-08 Syndiant, Inc. Digital backplane
US6833854B1 (en) 2003-06-12 2004-12-21 Micronic Laser Systems Ab Method for high precision printing of patterns
EP1631853A1 (de) 2003-06-12 2006-03-08 Micronic Laser Systems Ab Verfahren zum hochpräzisionsdruck von strukturen
US7186486B2 (en) * 2003-08-04 2007-03-06 Micronic Laser Systems Ab Method to pattern a substrate
US7023526B2 (en) * 2003-09-30 2006-04-04 Asml Holding N.V. Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system utilizing overlap without an explicit attenuation
US6876440B1 (en) * 2003-09-30 2005-04-05 Asml Holding N.V. Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system utilizing overlap of exposure zones with attenuation of the aerial image in the overlap region
US7410736B2 (en) * 2003-09-30 2008-08-12 Asml Holding N.V. Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system not utilizing overlap of the exposure zones
US7842926B2 (en) * 2003-11-12 2010-11-30 Micronic Laser Systems Ab Method and device for correcting SLM stamp image imperfections
EP1702242A2 (de) * 2004-01-08 2006-09-20 Micronic Laser Systems Ab Verfahren und einrichtung zur datenintegritätsprüfung
JP2007522671A (ja) * 2004-02-25 2007-08-09 マイクロニック レーザー システムズ アクチボラゲット 光マスクレスリソグラフィにおいてパターンを露光し、マスクをエミュレートする方法
JP2005300807A (ja) * 2004-04-09 2005-10-27 Pentax Corp 描画装置
JP2005300812A (ja) * 2004-04-09 2005-10-27 Pentax Corp 描画装置
US7242456B2 (en) * 2004-05-26 2007-07-10 Asml Holdings N.V. System and method utilizing a lithography tool having modular illumination, pattern generator, and projection optics portions
JP4068081B2 (ja) * 2004-05-26 2008-03-26 株式会社日立ハイテクノロジーズ 荷電粒子線描画装置
JP4601482B2 (ja) * 2004-07-29 2010-12-22 新光電気工業株式会社 描画装置および描画方法
WO2006021406A2 (en) * 2004-08-23 2006-03-02 Micronic Laser Systems Ab Pupil improvement of incoherent imaging systems for enhanced cd linearity
US7278129B2 (en) * 2004-09-09 2007-10-02 Micronic Laser Systems Ab Healing algorithm
JP2006113412A (ja) * 2004-10-15 2006-04-27 Fuji Photo Film Co Ltd 描画方法および描画装置
JP2006113413A (ja) * 2004-10-15 2006-04-27 Fuji Photo Film Co Ltd 描画方法および描画装置
US7457547B2 (en) * 2004-11-08 2008-11-25 Optium Australia Pty Limited Optical calibration system and method
KR101101290B1 (ko) 2004-11-15 2012-01-04 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 레이저 비아 드릴링 동안 형성되는 결함을 가지는 표본에의 추적 및 표시
US7349068B2 (en) * 2004-12-17 2008-03-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7403865B2 (en) * 2004-12-28 2008-07-22 Asml Netherlands B.V. System and method for fault indication on a substrate in maskless applications
US7477772B2 (en) * 2005-05-31 2009-01-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing 2D run length encoding for image data compression
US7965373B2 (en) * 2005-06-28 2011-06-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing a datapath having a balanced calculation load
US20090135200A1 (en) * 2005-06-28 2009-05-28 Mark Alan Schultz Selective Edge Blending Based on Displayed Content
WO2007035166A2 (en) * 2005-09-26 2007-03-29 Micronic Laser Systems Ab Methods and systems for pattern generation based on multiple forms of design data
US7303440B2 (en) * 2005-10-03 2007-12-04 Stull Michael F Universal battery charger/power source adapter
US7528932B2 (en) 2005-12-21 2009-05-05 Micronic Laser Systems Ab SLM direct writer
DE102006008080A1 (de) 2006-02-22 2007-08-30 Kleo Maschinenbau Ag Belichtungsanlage
CN100456137C (zh) * 2006-06-02 2009-01-28 上海微电子装备有限公司 光刻机同步时序控制串行数据通讯方法和***及应用
US8749463B2 (en) 2007-01-19 2014-06-10 Hamamatsu Photonics K.K. Phase-modulating apparatus
JP5194030B2 (ja) 2007-02-06 2013-05-08 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明系のマルチミラーアレイを監視するための方法および装置
US7890814B2 (en) * 2007-06-27 2011-02-15 Microsoft Corporation Software error report analysis
US20090199152A1 (en) * 2008-02-06 2009-08-06 Micronic Laser Systems Ab Methods and apparatuses for reducing mura effects in generated patterns
WO2009130603A2 (en) * 2008-04-24 2009-10-29 Micronic Laser Systems Ab Spatial light modulator with structured mirror surfaces
NL1036861A1 (nl) * 2008-07-25 2009-10-27 Asml Netherlands Bv Measurement apparatus and method.
US8065638B2 (en) 2009-01-30 2011-11-22 Synopsys, Inc. Incremental concurrent processing for efficient computation of high-volume layout data
US8893061B2 (en) * 2009-01-30 2014-11-18 Synopsys, Inc. Incremental concurrent processing for efficient computation of high-volume layout data
US8539395B2 (en) 2010-03-05 2013-09-17 Micronic Laser Systems Ab Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image
US8507159B2 (en) * 2011-03-16 2013-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Electron beam data storage system and method for high volume manufacturing
US8473877B2 (en) * 2011-09-06 2013-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Striping methodology for maskless lithography
US8893059B2 (en) 2012-02-06 2014-11-18 Kla-Tencor Corporation Pattern data system for high-performance maskless electron beam lithography
US9224183B2 (en) 2012-03-28 2015-12-29 Intel Corporation Projection of a plurality of structured light patterns
US8609308B1 (en) 2012-05-31 2013-12-17 Taiwan Semicondcutor Manufacturing Company, Ltd. Smart subfield method for E-beam lithography
US10714427B2 (en) 2016-09-08 2020-07-14 Asml Netherlands B.V. Secure chips with serial numbers
US10418324B2 (en) * 2016-10-27 2019-09-17 Asml Netherlands B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4572956A (en) * 1982-08-31 1986-02-25 Tokyo Shibaura Denki Kabushiki Kaisha Electron beam pattern transfer system having an autofocusing mechanism
US4659429A (en) * 1983-08-03 1987-04-21 Cornell Research Foundation, Inc. Method and apparatus for production and use of nanometer scale light beams
US5365561A (en) * 1988-03-25 1994-11-15 Canon Kabushiki Kaisha Exposure control in an X-ray exposure apparatus
US4977458A (en) * 1988-11-16 1990-12-11 Eastman Kodak Company Apparatus for addressing a font to suppress Moire patterns occurring thereby and a method for use therein
US5864146A (en) 1996-11-13 1999-01-26 University Of Massachusetts Medical Center System for quantitative radiographic imaging
US5199054A (en) * 1990-08-30 1993-03-30 Four Pi Systems Corporation Method and apparatus for high resolution inspection of electronic items
JPH04237115A (ja) * 1991-01-21 1992-08-25 Mitsubishi Electric Corp 描画パターンの精度モニタ方法
JPH04288813A (ja) * 1991-03-18 1992-10-13 Fujitsu Ltd 露光装置及びこれを用いた露光データ処理方法
JP3138005B2 (ja) * 1991-05-20 2001-02-26 株式会社日立製作所 電子線描画装置
US5296917A (en) * 1992-01-21 1994-03-22 Mitsubishi Denki Kabushiki Kaisha Method of monitoring accuracy with which patterns are written
US5189306A (en) * 1992-03-24 1993-02-23 International Business Machines Corporation Grey-splice algorithm for electron beam lithography post-processor
DE69331547T2 (de) * 1992-11-02 2003-04-24 Applied Materials Inc N D Ges Bildformattierung für ein mustererzeugungsgerät
JPH06310410A (ja) * 1993-04-26 1994-11-04 Nippon Telegr & Teleph Corp <Ntt> 電子ビーム露光データ構成法
JPH07263323A (ja) * 1994-03-20 1995-10-13 Fujitsu Ltd 露光データ作成方法及び装置
JP3472009B2 (ja) * 1995-03-20 2003-12-02 富士通株式会社 露光データ作成装置、露光データ作成方法及び荷電粒子ビーム露光装置
US5631721A (en) * 1995-05-24 1997-05-20 Svg Lithography Systems, Inc. Hybrid illumination system for use in photolithography
JP3601630B2 (ja) * 1995-11-01 2004-12-15 株式会社ニコン 荷電粒子線転写方法
JPH09162101A (ja) * 1995-12-07 1997-06-20 Fujitsu Ltd パターン露光方法及び電子ビーム露光装置
US6542830B1 (en) * 1996-03-19 2003-04-01 Hitachi, Ltd. Process control system
JPH09293661A (ja) * 1996-04-25 1997-11-11 Toshiba Microelectron Corp 半導体装置の製造方法及び露光マスク及び半導体装置
US5962172A (en) * 1996-11-12 1999-10-05 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for manufacturing photomask and method of manufacturing a semiconductor device
US6037967A (en) * 1996-12-18 2000-03-14 Etec Systems, Inc. Short wavelength pulsed laser scanner
SE509062C2 (sv) * 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
US6104035A (en) * 1997-06-02 2000-08-15 Canon Kabushiki Kaisha Electron-beam exposure apparatus and method
US6051344A (en) * 1997-06-17 2000-04-18 Intel Corporation Multiple reduction photolithography technique
JPH1154392A (ja) * 1997-07-29 1999-02-26 Nikon Corp 荷電粒子線露光方法
JP4207232B2 (ja) * 1997-09-02 2009-01-14 株式会社ニコン 荷電ビーム露光装置
JPH1187223A (ja) * 1997-09-11 1999-03-30 Sony Corp 電子ビーム露光装置及び電子ビーム露光方法
US6038041A (en) * 1997-09-17 2000-03-14 Virginia Tech Intellectual Properties, Inc. Three-dimensional holographic fluorescence microscope
US6087052A (en) * 1997-10-01 2000-07-11 Fujitsu Limited Charged particle beam exposure method utilizing subfield proximity corrections
JPH11204423A (ja) * 1998-01-14 1999-07-30 Nikon Corp パターン転写方法及びパターン転写用マスク
JP3594474B2 (ja) * 1998-02-17 2004-12-02 富士通株式会社 荷電粒子ビーム露光方法及びそれを実施する荷電粒子ビーム露光装置
JP4238390B2 (ja) * 1998-02-27 2009-03-18 株式会社ニコン 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法
SE9800665D0 (sv) * 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
EP1098359A4 (de) * 1998-06-02 2003-11-19 Nikon Corp Abtast-ausrichter, herstellungsverfahren dafür und vorrichtungsherstellungsverfahren
US6040095A (en) * 1998-09-30 2000-03-21 Nikon Corporation Measurement marks for e-beam projection mask and method of using
US6496160B1 (en) * 1999-04-29 2002-12-17 Evans & Sutherland Computer Corporation Stroke to raster converter system
US6675169B1 (en) * 1999-09-07 2004-01-06 Microsoft Corporation Method and system for attaching information to words of a trie
JP4017935B2 (ja) * 2002-07-30 2007-12-05 株式会社日立ハイテクノロジーズ マルチビーム型電子線描画方法及び装置
CN101111850A (zh) * 2005-01-28 2008-01-23 Asml控股股份有限公司 用于基于全局优化的无掩模光刻光栅化技术的方法和***

Also Published As

Publication number Publication date
US7590966B2 (en) 2009-09-15
SE9903243D0 (sv) 1999-09-09
KR100748767B1 (ko) 2007-08-13
CN1373862A (zh) 2002-10-09
US6717097B1 (en) 2004-04-06
JP2003508825A (ja) 2003-03-04
CN1203376C (zh) 2005-05-25
KR20020072530A (ko) 2002-09-16
DE10085017B4 (de) 2011-08-11
US20040159636A1 (en) 2004-08-19
WO2001018606A1 (en) 2001-03-15
SE516914C2 (sv) 2002-03-19
AU7566400A (en) 2001-04-10
SE9903243L (sv) 2001-03-10

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