CN86105717A - 晶体管转换器的基极激励回路 - Google Patents
晶体管转换器的基极激励回路 Download PDFInfo
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- CN86105717A CN86105717A CN8686105717A CN86105717A CN86105717A CN 86105717 A CN86105717 A CN 86105717A CN 8686105717 A CN8686105717 A CN 8686105717A CN 86105717 A CN86105717 A CN 86105717A CN 86105717 A CN86105717 A CN 86105717A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/615—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in a Darlington configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04126—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/795—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
- H03K17/7955—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors using phototransistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
- Amplifiers (AREA)
- Dc-Dc Converters (AREA)
Abstract
本发明涉及一种使直流变换成交流的晶体管转换器的基极激励回路,它使转换器主回路上的晶体管之基极上流过反向偏压电流的晶体管是用连接在直接受控制回路控制的光电耦合器的后级的放大用晶体管来直接驱动的,所以能使回路简化和小形化及减少发热部件,达到提高可靠性的目的。
Description
本发明涉及转换器装置,尤其涉及晶体管转换器的基极激励回路。
第2图是图示传统的晶体管转换器的基极激励回路的构成图。在图中,(1)是供给正方向基极电流用的第1电源,(2)是光电耦合器,(3)~(7)是基极激励用晶体管,(8)是转换器主回路的晶体管,(9)是基极电流限流用电阻,(10)~(18)是二极管,(19)是供给反方向基极电流用的第2电源,(20)是电容器,(21)是电感器,(22)~(32)是电阻。
接着就上述构成中的动作进行说明。首先,通过光电耦合器(2)对来自控制回路(P)的脉冲信号进行光电传递,来驱动连接在该光电耦合器(2)的后级的PNP型晶体管(3)及NPN型晶体管(4),其中,(P)是控制晶体管(8)的转换动作的控制回路。在晶体管(4)的后级,连接着NPN型晶体管(5),其结果,晶体管(3)与晶体管(5)互为补充地进行动作,即当晶体管(3)导通时晶体管(5)截止,而当晶体管(3)截止时晶体管(5)导通。
现在对晶体管(3)导通时的情况进行说明,转换器主回路的晶体管(8)的基极电流(Ib1)从电源(1)起,经过晶体管(3)、电阻(9)、二极管(10)、晶体管(7)和电感器(21)被供应给晶体管(8)的基极,再通过二极管(16)、(15)、(14)、(13)、(12)和(11)返回电源(1)。这时,电容器(20)被充电,其电压差相当于上述六个二极管的正向电压之和。
接着,一旦来自控制回路(P)的脉冲信号被切断,晶体管(3)截止,晶体管(5)即导通,所以,电容器(20)的电荷通过晶体管(8)、电感器(21)、晶体管(7)、晶体管(6)、电阻(28)和晶体管(5)进行放电,与此同时,晶体管(6)导通,由于电源(19),晶体管(8)和晶体管(7)中流过反向偏压电流(Ib2),使该晶体管截止。这时,二极管(18)成为晶体管(7)截止后的反向偏压电流的旁路。
因为传统的晶体管转换器的基极激励回路是如上那样构成的,所以,为了要使晶体管(6)导通,就必须把必要的电压对电容器(20)进行充电,由于该充电利用了与其并列连接的二极管(11)~(16)的正向电压的下降,因此,不仅二极管的需要个数增多,回路变复杂,而且还存在该二极管由于正向电流而发热,在温度可靠性方向也不够理想的问题。
本发明是为了消除上述问题而作出的,目的在于不再使用为使晶体管(6)导通而连接着的电容器(20)以及二极管(11)~(16),以使回路简化的同时,获得发热部件减少、温度可靠性高的晶体管转换器的基极激励回路。
本发明涉及的晶体管转换器的基极激励回路构成如下:晶体管(6)是利用连接在光电耦合器(2)的后级的放大用晶体管直接驱动的,上述晶体管(6)是用来使反向偏压电流流经作为转换器主回路的晶体管用的,而上述光电耦合器能将来自控制回路的脉冲信号进行绝缘传递。
如果使用本发明的晶体管转换器的基极激励回路,因为使反向偏压电流流过的晶体管(6)是用连接在光电耦合器的后极的放大用晶体管来直接驱动的,所以能使回路简化和小形化,还能减少发热部件,达到提高可靠性的目的。
以下,根据第1图说明本发明的一个实施例。在第1图中,符号(1)~(32)与第2图所示是相同的,缺号所示是根据本发明而不再需要的部件,即不再需要二极管(10)~(16),电容器(20)及电阻(27)、(28)、(30),而使反向偏压电流流动的晶体管(6)由连接在光电耦合器(2)的后级的放大用晶体管(5)直接驱动。
接着就第1图的回路动作进行说明。
来自控制回路(P)的脉冲信号通过光电耦合器(2)进行光电传递,使连接在该光电耦合器(2)的输出端的第1晶体管(3)及第2晶体管(4)导通。在第2晶体管(4)的后级连接着放大用的第3晶体管(5),来放大脉冲信号。
还有,因为在第3晶体管(5)的后级,连接着使反向偏压电流流经作为转换器主回路的晶体管(8)的第4晶体管(6),因此其结果,第1与第3晶体管(3)与(5)以及第1与第4晶体管(3)与(6)互为补充地进行动作,即因为第1晶体管(3)导通时,第2晶体管(4)也导通,所以第3、第4的晶体管(5)、(6)截止,而第1晶体管(3)截止时第2晶体管(4)也截止,第3、第4的晶体管(5)和(6)导通。
现在对光电耦合器由于来自控制回路(P)的脉冲信号而导通,从而第1与第2晶体管(3)、(4)导通时的情况进行说明。该场合,提供给转换器主回路晶体管(8)的基极电流(Ib1)自第1电源(1)的阳极起,经过第1晶体管(3)、电阻(9)、第5晶体管(7)的基极一发射极以及电感器(21),提供给该晶体管(8)的基极,再返回第1电源(1)的阴极。
相反,来自控制回路(P)的脉冲信号一旦被切断,光电耦合器(2)便不导通,当第1、第2晶体管(3)、(4)截止时,第3晶体管(5)的基极电压便上升,因此导通,第4晶体管(6)也导通。因此,转换器主回路晶体管(8)的基极电流自第2电源(19)的阳极起,经过晶体管(8)的发射极-基极、电感器(21),作为反向偏压电流(Ib2)再流到第5晶体管(7)的发射极-基极,使晶体管(7)、(8)截止。
这样,当控制回路(P)的脉冲信号从有到无变化时,转换器主回路晶体管(8)与第5晶体管(7)中流过反向偏压电流(Ib2),各晶体管的基极-发射极间积蓄的电荷被放出,因此当脉冲信号再次进入时,该积蓄电荷的影响消失,各晶体管(7)、(8)便能迅速地转向导通动作。
这里,第2二极管(18)成为第5晶体管(7)截止后的反向偏压电流(Ib2)的旁路。另外,第1二极管(17)是当转换器主回路晶体管(8)过激励时,使基极电流不从第5晶体管(7)的基极流向集电极的元件。
因此,为了使反向偏压电流(Ib2)流动,做成在放大用的第3晶体管(5)上直接连接第4晶体管(6)进行驱动的结构,来使转换器主回路晶体管(8)和第5晶体管(7)中流过反向偏压电流(Ib2),因此能构成不需要如传统例那样的电容器及多个二极管的晶体管转换器的基极激励回路。
如上所述,根据本发明,因为使反向偏压电流流过的第4晶体管(6)是利用连接在把来自控制回路的脉冲输入信号进行绝缘传递的光电耦合器的后级的放大用晶体管(5)直接驱动的,所以有如下效果:回路能简化,同时发热部件减少,可获得可靠性高的晶体管转换器的基极激励回路。
关于附图的简单说明。第1图是图示根据本发明的一实施例的晶体管转换器的基极激励回路的回路图,第2图是图示传统的晶体管转换器的基极激励回路的回路图。
Claims (2)
1、一种以晶体管的导通和截止来使直流变换成交流的晶体管转换器的基极激励回路,其特征在于,使反向偏压电流流经作为转换器主回路的晶体管之基极的晶体管是用连接在光电耦合器的后级的放大用晶体管来直接驱动的,该光电耦合器是以来自控制回路的脉冲信号作通、断动作的。
2、根据权利要求1所述的晶体管转换器的基极激励回路,其特征在于,它包括如下装置:
以来自控制回路的脉冲信号进行通、断的光电耦合器(2),
与该光电耦合器相连的第1、第2的晶体管(3)、(4),
连接在该第2晶体管(4)的后级,对其输出进行放大的第3晶体管(5),
基极连接在该第3晶体管(5)的后级,发射极通过电阻(9)与上述第1晶体管(3)的集电极相连,与上述第1晶体管(3)互为补充地进行动作的第4晶体管(6),
基极连接在该第4晶体管(6)与上述电阻的连接点,集电极与第1二极管(17)相连,并且在基极-发射极之间连接着第2二极管(18)的第5晶体管(7),同时,
电感器(21)连接在上述第5晶体管(7)的发射极与作为转换器主回路的晶体管(8)的基极之间,上述第1二极管(17)连接在上述第5晶体管(7)的集电极与上述主回路晶体管(8)的集电极之间,
第1电源(1)的阴极与第2电源(19)的阳极的连接点与上述主回路晶体管(8)的发射极相连,
上述第1电源(1)的阳极与上述第1晶体管的发射极相连,上述第2电源(19)的阴极与上述第2、第3晶体管(4)、(5)的发射极及上述第4晶体管(6)的集电极相连。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60168111A JPS6231377A (ja) | 1985-07-30 | 1985-07-30 | トランジスタインバ−タのベ−スドライブ回路 |
JP60-168111 | 1985-07-30 | ||
JP168111/85 | 1985-07-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN86105717A true CN86105717A (zh) | 1987-01-28 |
CN86105717B CN86105717B (zh) | 1988-12-28 |
Family
ID=15862054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN86105717A Expired CN86105717B (zh) | 1985-07-30 | 1986-07-16 | 晶体管转换器的基极激励回路 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4716513A (zh) |
JP (1) | JPS6231377A (zh) |
KR (1) | KR900002597B1 (zh) |
CN (1) | CN86105717B (zh) |
DE (1) | DE3625689C2 (zh) |
GB (1) | GB2180709B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4816984A (en) * | 1987-02-06 | 1989-03-28 | Siemens Aktiengesellschaft | Bridge arm with transistors and recovery diodes |
US4970635A (en) * | 1988-11-14 | 1990-11-13 | Sundstrand Corporation | Inverter with proportional base drive controlled by a current transformer |
EP0373240A1 (de) * | 1988-12-13 | 1990-06-20 | Siemens Aktiengesellschaft | Selbstregelnde Treiberschaltung mit Sättigungsgradregelung für den Basisstrom eines Leistungstransistors |
US4937468A (en) * | 1989-01-09 | 1990-06-26 | Sundstrand Corporation | Isolation circuit for pulse waveforms |
US6806457B2 (en) * | 2001-09-28 | 2004-10-19 | Tai-Her Yang | Transistor photoelectric conversion drive circuit |
GB2437964B (en) | 2006-05-06 | 2009-03-25 | Siemens Magnet Technology Ltd | An annular enclosure provided with an arrangement of recesses or protrustions to reduce mechanical resonance |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4220987A (en) * | 1978-12-29 | 1980-09-02 | Bell Telephone Laboratories, Incorporated | Converter drive circuit |
JPS635436Y2 (zh) * | 1980-08-20 | 1988-02-15 | ||
JPS5828292A (ja) * | 1981-08-10 | 1983-02-19 | Kyowa Hakko Kogyo Co Ltd | 発酵法によるl−リジンの製造法 |
JPS5855582B2 (ja) * | 1981-11-13 | 1983-12-10 | 株式会社東芝 | 透視性テ−プカセツト |
IT1218316B (it) * | 1982-03-17 | 1990-04-12 | Ates Componenti Elettron | Circuito di comando in commutazione di carichi induttivi,integrabile monolicamente,comprendente uno stadio finalein push-pull |
JPS59106885A (ja) * | 1982-12-08 | 1984-06-20 | Fuji Electric Co Ltd | 半導体スイツチ駆動回路 |
JPH0669297B2 (ja) * | 1983-03-29 | 1994-08-31 | 松下電器産業株式会社 | インバータ用ベース電流ドライブ回路 |
GB2142495B (en) * | 1983-06-24 | 1986-09-17 | Barry Wayne Williams | Switch-off circuits for transistors and gate turn-off thyristors |
JPS607225A (ja) * | 1983-06-24 | 1985-01-16 | Matsushita Refrig Co | トランジスタインバ−タのベ−スドライブ回路 |
DE3341074A1 (de) * | 1983-11-12 | 1985-05-23 | Telefunken Fernseh Und Rundfunk Gmbh, 3000 Hannover | Schaltnetzteil, insbesondere fuer einen fernsehempfaenger, mit einer schutzschaltung zur begrenzung des primaerstroms |
US4638240A (en) * | 1985-12-05 | 1987-01-20 | Tandem Computers Incorporated | Base drive circuit for high-power switching transistor |
-
1985
- 1985-07-30 JP JP60168111A patent/JPS6231377A/ja active Pending
-
1986
- 1986-07-01 KR KR1019860005310A patent/KR900002597B1/ko not_active IP Right Cessation
- 1986-07-16 CN CN86105717A patent/CN86105717B/zh not_active Expired
- 1986-07-28 US US06/890,047 patent/US4716513A/en not_active Expired - Fee Related
- 1986-07-29 GB GB8618449A patent/GB2180709B/en not_active Expired
- 1986-07-30 DE DE3625689A patent/DE3625689C2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR870001698A (ko) | 1987-03-17 |
JPS6231377A (ja) | 1987-02-10 |
CN86105717B (zh) | 1988-12-28 |
DE3625689C2 (de) | 1997-09-11 |
GB2180709A (en) | 1987-04-01 |
GB2180709B (en) | 1989-08-16 |
DE3625689A1 (de) | 1987-02-12 |
KR900002597B1 (ko) | 1990-04-20 |
US4716513A (en) | 1987-12-29 |
GB8618449D0 (en) | 1986-09-03 |
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