CN208157401U - 一种igbt半桥模块结构 - Google Patents

一种igbt半桥模块结构 Download PDF

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CN208157401U
CN208157401U CN201820785462.2U CN201820785462U CN208157401U CN 208157401 U CN208157401 U CN 208157401U CN 201820785462 U CN201820785462 U CN 201820785462U CN 208157401 U CN208157401 U CN 208157401U
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signal terminal
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姜维宾
孙叔翔
徐冰
臧天程
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Yantai Tai Core Electronic Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements

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Abstract

本实用新型涉及一种IGBT半桥模块结构，左路DBC上设有左路IGBT芯片和左路FRD芯片，左路IGBT芯片和左路FRD芯片通过锡膏焊接在左路DBC上端，左路IGBT芯片引出有左路G极信号端子，左路FRD芯片引出有左路E极信号端子；右路DBC上设有右路IGBT芯片和右路FRD芯片，右路IGBT芯片和右路FRD芯片通过锡膏焊接在右路DBC上端，右路IGBT芯片与右路FRD芯片连接，右路IGBT芯片引出有右路G极信号端子和右路E极信号端子。本实用新型摒弃单芯铜导线焊接方案，采用键合打线连接，降低了生产难度，提高了生产效率，提升了产品电流承载能力，增强产品长期使用的可靠性。

Description

一种IGBT半桥模块结构
技术领域
本实用新型涉及一种IGBT半桥模块结构，属于大功率半导体技术领域。
背景技术
IGBT半桥模块是由IGBT(绝缘栅双极型晶体管芯片)与FRD(快恢复二极管)通过特定的电路桥接封装而成的模块化半导体产品；封装后的IGBT模块直接应用于变频器、UPS不间断电源等设备上。目前，通用34MMIGBT半桥模块内部采用相同结构的DBC设计，此类产品由于DBC结构所限，需采用4根单芯铜导线将DBC与引线端子连接，工艺复杂，生产效率低，对操作人员要求较高，且所出产品电流承载能力弱，长期可靠性低。
实用新型内容
本实用新型针对现有技术存在的不足，提供一种IGBT半桥模块结构，通对IGBT半桥模块内部两块DBC结构进行差异化设计，摒弃单芯铜导线焊接方案，采用键合打线连接，降低了生产难度，提高了生产效率，提升了产品电流承载能力，增强产品长期使用的可靠性。
本实用新型解决上述技术问题的技术方案如下：一种IGBT半桥模块结构，所述IGBT半桥模块包括基板，基板上设有覆铜层，所述基板形成有左路DBC和右路DBC，所述左路DBC上设有左路IGBT芯片和左路FRD芯片，所述左路IGBT芯片和左路FRD芯片通过锡膏焊接在所述左路DBC上端，左路IGBT芯片引出有左路G极信号端子，左路FRD芯片引出有左路E极信号端子；所述右路DBC上设有右路IGBT芯片和右路FRD芯片，所述右路IGBT芯片和右路FRD芯片通过锡膏焊接在所述右路DBC上端，右路IGBT芯片与所述右路FRD芯片连接，右路IGBT芯片引出有右路G极信号端子和右路E极信号端子；所述左路G极信号端子、左路E极信号端子、右路G极信号端子和右路E极信号端子分别通过锡膏焊接在所述右路DBC侧部。
如上所述的一种IGBT半桥模块结构，所述左路G极信号端子从所述左路IGBT芯片上侧引出，左路G极信号端子和左路IGBT芯片之间通过铝丝导通。铝丝采用市场上常用的粗铝丝焊(线径100UM-500UM)，通过超声键合方式引到右路DBC侧部。
如上所述的一种IGBT半桥模块结构，所述左路E极信号端子从所述左路FRD芯片下侧引出，左路E极信号端子和左路FRD芯片之间通过铝丝导通。此处的铝丝采用市场上常用的粗铝丝焊(线径100UM-500UM)，通过超声键合方式引到右路DBC侧部。左路G极信号端子和左路E极信号端子分别从不同的方向从左路DBC上下侧引出，左路G极信号端子和左路E极信号端子并列设置在右路DBC侧部，结构局部合理。
如上所述的一种IGBT半桥模块结构，所述右路G极信号端子从所述右路IGBT芯片下侧引出，右路G极信号端子和右路IGBT芯片之间通过铝丝导通。此处铝丝采用市场上常用的粗铝丝焊(线径100UM-500UM)，通过超声键合方式引到右路DBC侧部。
如上所述的一种IGBT半桥模块结构，所述右路E极信号端子从所述右路IGBT芯片下侧引出，右路E极信号端子和右路IGBT芯片之间通过铝丝导通。此处铝丝采用市场上常用的粗铝丝焊(线径100UM-500UM)，通过超声键合方式引到右路DBC侧部。
如上所述的一种IGBT半桥模块结构，所述左路G极信号端子和左路E极信号端子位于所述右路DBC的上侧，所述右路G极信号端子和右路E极信号端子位于所述右路DBC的下侧。
如上所述的一种IGBT半桥模块结构，所述左路DBC和右路DBC采用非对称结构，所述左路G极信号端子和左路E极信号端子间隔有氧化铝陶瓷，所述右路G极信号端子和右路E极信号端子间隔有氧化铝陶瓷。
本实用新型的有益效果是：可提高IGBT半桥模块的生产效率，提升效果达到60％以上；可使传统生产流程节省一道工序，降低人工成本，降低生产难度；左右两路的G极和E极电流均通过DBC正面覆铜层传导，电流承载能力更强，损耗电流更小；摒弃传统导线点焊接方式艺，通过DBC正面覆铜层传导电流，长期可靠性更高。
附图说明
图1为IGBT半桥模块左路DBC和右路DBC结构示意图；
图2为IGBT半桥模块结构示意图。
具体实施方式
为使本实用新型的上述目的、特征和优点能够更加明显易懂，下面结合附图对本实用新型的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本实用新型。但是本实用新型能够以很多不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本实用新型内涵的情况下做类似改进，因此本实用新型不受下面公开的具体实施例的限制。
除非另有定义，本文所使用的所有的技术和科学术语与属于本实用新型的技术领域的技术人员通常理解的含义相同。本文中在本实用新型的说明书中所使用的术语只是为了描述具体的实施方式的目的，不是旨在于限制本实用新型。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。
参见图1和图2，一种IGBT半桥模块结构，所述IGBT半桥模块包括基板1，基板1上设有覆铜层，所述基板1形成有左路DBC2和右路DBC3，所述左路DBC2上设有左路IGBT芯片4和左路FRD芯片5，所述左路IGBT芯片4和左路FRD芯片5通过锡膏焊接在所述左路DBC2上端，左路IGBT芯片4引出有左路G极信号端子6，左路FRD芯片5引出有左路E极信号端子7；所述右路DBC3上设有右路IGBT芯片8和右路FRD芯片9，所述右路IGBT芯片8和右路FRD芯片9通过锡膏焊接在所述右路DBC3上端，右路IGBT芯片8与所述右路FRD芯片9连接，右路IGBT芯片8引出有右路G极信号端子10和右路E极信号端子11；所述左路G极信号端子6、左路E极信号端子7、右路G极信号端子10和右路E极信号端子11分别通过锡膏焊接在所述右路DBC3侧部。
IGBT半桥模块结构的一个实施例中，所述左路G极信号端子6从所述左路IGBT芯片4上侧引出，左路G极信号端子6和左路IGBT芯片4之间通过铝丝导通。所述左路E极信号端子7从所述左路FRD芯片5下侧引出，左路E极信号端子7和左路FRD芯片5之间通过铝丝导通。此处的铝丝采用市场上常用的粗铝丝焊(线径100UM-500UM)，通过超声键合方式引到右路DBC3侧部。左路G极信号端子6和左路E极信号端子7分别从不同的方向从左路DBC2上下侧引出，左路G极信号端子6和左路E极信号端子7并列设置在右路DBC3侧部，结构局部合理。
IGBT半桥模块结构的一个实施例中，所述右路G极信号端子10从所述右路IGBT芯片8下侧引出，右路G极信号端子10和右路IGBT芯片8之间通过铝丝导通。所述右路E极信号端子11从所述右路IGBT芯片8下侧引出，右路E极信号端子11和右路IGBT芯片8之间通过铝丝导通。此处铝丝采用市场上常用的粗铝丝焊(线径100UM-500UM)，通过超声键合方式引到右路DBC3侧部。
IGBT半桥模块结构的一个实施例中，所述左路G极信号端子6和左路E极信号端子7位于所述右路DBC3的上侧，所述右路G极信号端子10和右路E极信号端子11位于所述右路DBC3的下侧。所述左路DBC2和右路DBC3采用非对称结构，所述左路G极信号端子6和左路E极信号端子7间隔有氧化铝陶瓷，所述右路G极信号端子10和右路E极信号端子11间隔有氧化铝陶瓷。
本实用新型对IGBT半桥模块内部两块DBC结构进行差异化设计，摒弃单芯铜导线焊接方案，采用键合打线连接，降低生产难度，提高了生产效率，提升了产品电流承载能力，增强产品的长期可靠性。其中左路DBC2和右路DBC3采用非对称结构，通过电路刻蚀在左路DBC2正面覆铜层，形成左路G极和E极；左路G极和E极通过粗铝丝超声键合方式引到右路形成左路G极信号端子6左路E极信号端子7；在右路DBC3上直接焊接信号端子。可提高IGBT半桥模块的生产效率，提升效果达到60％以上；可使传统生产流程节省一道工序，降低人工成本，降低生产难度；左右两路的G极和E极电流均通过DBC正面覆铜层传导，电流承载能力更强，损耗电流更小；摒弃传统导线点焊接方式艺，通过DBC正面覆铜层传导电流，长期使用可靠性更高。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本实用新型的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对实用新型专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本实用新型构思的前提下，还可以做出若干变形和改进，这些都属于本实用新型的保护范围。因此，本实用新型专利的保护范围应以所附权利要求为准。

Claims (7)

1.一种IGBT半桥模块结构，所述IGBT半桥模块包括基板，基板上设有覆铜层，所述基板形成有左路DBC和右路DBC，其特征在于：所述左路DBC上设有左路IGBT芯片和左路FRD芯片，所述左路IGBT芯片和左路FRD芯片通过锡膏焊接在所述左路DBC上端，左路IGBT芯片引出有左路G极信号端子，左路FRD芯片引出有左路E极信号端子；所述右路DBC上设有右路IGBT芯片和右路FRD芯片，所述右路IGBT芯片和右路FRD芯片通过锡膏焊接在所述右路DBC上端，右路IGBT芯片与所述右路FRD芯片连接，右路IGBT芯片引出有右路G极信号端子和右路E极信号端子；所述左路G极信号端子、左路E极信号端子、右路G极信号端子和右路E极信号端子分别通过锡膏焊接在所述右路DBC侧部。
2.根据权利要求1所述的一种IGBT半桥模块结构，其特征在于：所述左路G极信号端子从所述左路IGBT芯片上侧引出，左路G极信号端子和左路IGBT芯片之间通过铝丝导通。
3.根据权利要求1所述的一种IGBT半桥模块结构，其特征在于：所述左路E极信号端子从所述左路FRD芯片下侧引出，左路E极信号端子和左路FRD芯片之间通过铝丝导通。
4.根据权利要求1所述的一种IGBT半桥模块结构，其特征在于：所述右路G极信号端子从所述右路IGBT芯片下侧引出，右路G极信号端子和右路IGBT芯片之间通过铝丝导通。
5.根据权利要求1所述的一种IGBT半桥模块结构，其特征在于：所述右路E极信号端子从所述右路IGBT芯片下侧引出，右路E极信号端子和右路IGBT芯片之间通过铝丝导通。
6.根据权利要求1所述的一种IGBT半桥模块结构，其特征在于：所述左路G极信号端子和左路E极信号端子位于所述右路DBC的上侧，所述右路G极信号端子和右路E极信号端子位于所述右路DBC的下侧。
7.根据权利要求1所述的一种IGBT半桥模块结构，其特征在于：所述左路DBC和右路DBC采用非对称结构，所述左路G极信号端子和左路E极信号端子间隔有氧化铝陶瓷，所述右路G极信号端子和右路E极信号端子间隔有氧化铝陶瓷。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110349943A (zh) * 2019-06-30 2019-10-18 华中科技大学 一种高压igbt半桥模块
WO2020108365A1 (zh) * 2018-11-28 2020-06-04 烟台台芯电子科技有限公司 一种igbt半桥模块结构

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020108365A1 (zh) * 2018-11-28 2020-06-04 烟台台芯电子科技有限公司 一种igbt半桥模块结构
CN110349943A (zh) * 2019-06-30 2019-10-18 华中科技大学 一种高压igbt半桥模块
CN110349943B (zh) * 2019-06-30 2021-06-11 华中科技大学 一种高压igbt半桥模块

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