CN205635856U - Polysilicon ingot furnace - Google Patents
Polysilicon ingot furnace Download PDFInfo
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- CN205635856U CN205635856U CN201620491532.4U CN201620491532U CN205635856U CN 205635856 U CN205635856 U CN 205635856U CN 201620491532 U CN201620491532 U CN 201620491532U CN 205635856 U CN205635856 U CN 205635856U
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- polycrystalline silicon
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Abstract
The utility model discloses an enough realize energy saving and emission reduction's polysilicon ingot furnace. This polysilicon ingot furnace can guarantee that the silicon bulk not by under the prerequisite of oxidation, through adjusting flow control valve, reduces the supply of argon gas gradually along with the continuous growth of silicon bulk through set up flow control valve in the intake pipe to practice thrift the argon gas, simultaneously, the supply of argon gas has reduced still to avoid the argon gas and has got into behind the furnace body from the aspirating hole exhaust in -process again and take away a large amount of heats, and energy consumption that can the greatly reduced heater realizes energy saving and emission reduction, be favorable to energy -concerving and environment -protective, the last control switch that is connected with of flow control valve, the last time -recorder that is connected with of control switch, through the time of preset time -recorder, when the time that the time -recorder reach to be set for, control switch work, and then adjust flow control valve, whole process need not the workman and carries out on -site supervision, greatly reduced workman's intensity of labour. Be fit for the field popularization and application at polysilicon production equipment.
Description
Technical field
This utility model relates to production of polysilicon apparatus field, especially a kind of polycrystalline silicon ingot or purifying furnace.
Background technology
Solaode can convert light energy into electric energy, is an emphasis of modern Energy-saving Society development.According to matrix material
Difference, existing solaode is divided into polysilicon solar cell, monocrystaline silicon solar cell and class monocrystaline silicon solar cell.
Wherein, the transformation efficiency of monocrystaline silicon solar cell is high, but production cost is the highest, the transformation efficiency ratio of polysilicon solar cell
The low 1%-2% of monocrystaline silicon solar cell, but its production cost is the lowest, and class monocrystaline silicon solar cell is between monocrystalline silicon battery
And the battery between polysilicon solar cell.Considering, solaode in the market is still with polycrystalline silicon solar electricity
Chi Weizhu.
The polycrystal silicon ingot being currently used for producing polysilicon solar cell generally uses casting ingot process, and casting ingot process is usually logical
Crossing what polycrystalline silicon ingot or purifying furnace realized, existing polycrystalline silicon ingot or purifying furnace includes body of heater, body of heater is provided with aspirating hole, in described body of heater
Being provided with subiculum warming plate and thermal insulation cover, thermal insulation cover is placed on subiculum warming plate, and thermal insulation cover and subiculum warming plate collectively form guarantor
Temperature heat-insulation cage, described thermal insulation cover connects and has the elevating lever that thermal insulation cover can be made to move up and down, be provided with in described insulation cage
Crucible, crucible guard boards, graphite base plate, graphite cover plate, side heater, top heater, heat exchange platform, described graphite
Base plate is placed on heat exchange platform, and crucible is placed on graphite base plate, and crucible guard boards is arranged on outside crucible, side heater
Being arranged on the outside of crucible guard boards, graphite cover plate is arranged on above crucible, and top heater is arranged on above graphite cover plate, described
Heat exchange platform is fixed on bottom of furnace body by graphite column, and the upper end of crucible guard boards is provided with exhaust emissions hole, also includes air inlet
Pipe, described air inlet pipe stretches in crucible after sequentially passing through body of heater, thermal insulation cover, top heater, graphite cover plate.
Current casting ingot process, is first after spraying-stocking process, enters back into ingot casting operation.
Spraying: can react with crucible after silicon material high temperature melting, introduces impurity, and causes viscous pot, affect the quality of silicon ingot,
So needing to spray one layer of Silicon nitride solution between crucible and silicon material, silicon nitride is utilized can effectively to isolate silicon material and crucible,
After Silicon nitride solution has sprayed, then carry out high temperature drying, the moisture in Silicon nitride solution is evaporated, so that it may so that in crucible
Wall one layer of silicon nitride coating of attachment.
Charging: after crucible is dried, by fragmentary silicon material, in order, requires and silicon material is loaded in crucible by weight.
The crucible of charged can be carried out next step casting ingot process, is first loaded by charged crucible in the body of heater of ingot furnace,
After installing on request, by ingot furnace closing lid, the ingot furnace that closing lid is later, it is formed for a chamber sealed, silicon material will be installed
Sealed crucible is inside ingot furnace, and bring into operation casting ingot process, and whole casting ingot process divides 6 processes, and evacuation-heat-melt-
Long brilliant-annealing-cooling.
S11, evacuation: taken away from aspirating hole by the air in body of heater, during preventing from heating up, the oxygen in air is sent out with silicon material
Raw oxidation reaction, affects Ingot quality.Evacuation is to utilize vacuum pump to be extracted out by the air in body of heater, until reaching opening of device
Requirement.
S12, heating: after evacuation completes, enter the heating period, and heating is to make silicon material be rapidly heated close to fusing temperature
Degree, now the environment in furnace chamber is vacuum environment, can be conducive to will be attached to the steam on silicon material surface, by evacuation
Method is extracted out, and is rapidly heated.
S13, fusing: in fusion process, need to fill argon in the chamber sealed, it is to avoid be attached to the silicon nitride of crucible internal walls
Coating is decomposed reaction, and argon is to be filled with in body of heater by air inlet pipe.After fusing starts, start inflation in body of heater, by technique
After program is inflated to authorized pressure, start dynamically to keep.
S14, long crystalline substance: the silicon material melted, proceed by long crystalline substance, and long brilliant process is to be ramped up by the thermal insulation cover of furnace interior,
Liquid-state silicon starts heat radiation from bottom, and the liquid-state silicon of bottom becomes solid-state silicon, and along with the rising of thermal insulation cover and scattering and disappearing of heat,
Slowly upwards solidify, until whole silicon ingot has solidified.
S15, annealing: owing to long brilliant process starts in bottom, and rise with thermal insulation cover, until top, so push up at the end because of
For the reason of heat radiation, certain temperature difference will be there is, produce internal stress.The effect of annealing is exactly under ensureing isoperibol,
Eliminate temperature difference, thus eliminate internal stress.
S16, cooling: in furnace chamber, silicon ingot is cooled fast to tapping temperature.
Described polycrystalline silicon ingot or purifying furnace, including having the body of heater of mezzanine space, body of heater is provided with aspirating hole, sets in described body of heater
Being equipped with subiculum warming plate and thermal insulation cover, thermal insulation cover is placed on subiculum warming plate, and thermal insulation cover and subiculum warming plate collectively form insulation
Heat-insulation cage, described thermal insulation cover connects and has the elevating lever that thermal insulation cover can be made to move up and down, be provided with earthenware in described insulation cage
Crucible, crucible guard boards, graphite base plate, graphite cover plate, side heater, top heater, heat exchange platform, at the bottom of described graphite
Plate is placed on heat exchange platform, and crucible is placed on graphite base plate, and crucible guard boards is arranged on outside crucible, and side heater sets
Putting the outside at crucible guard boards, graphite cover plate is arranged on above crucible, and top heater is arranged on above graphite cover plate, described heat
Switching plane is fixed on bottom of furnace body by graphite column, and the upper end of crucible guard boards is provided with exhaust emissions hole, also includes air inlet pipe,
One end of described air inlet pipe is connected with argon gas source, after the other end sequentially passes through body of heater, thermal insulation cover, top heater, graphite cover plate
Stretch in crucible, be passed through in polycrystalline silicon ingot or purifying furnace argon be in order to avoid silicon ingot in growth course oxidized, due to existing
Any device that can regulate argon flow amount is not had, say, that in whole silicon ingot growth course in the air inlet pipe of polycrystalline silicon ingot casting,
The ventilation of argon is stablized constant, generally for prevent silicon ingot in growth course oxidized, the air inflow of argon is general the most all
Relatively big, but, find in a practical situation, along with the continuous growth of silicon ingot, particularly to the later stage, only need less argon i.e.
Can, if continuing to be passed through too much argon, not only causing the waste of argon, from aspirating hole arranging again after argon enters body of heater simultaneously
Substantial amounts of heat can be taken away during going out, be unfavorable for energy-conserving and environment-protective.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of polycrystalline silicon ingot or purifying furnace being capable of energy-saving and emission-reduction.
This utility model solves its technical problem and be the technical scheme is that this polycrystalline silicon ingot or purifying furnace, including having mezzanine space
Body of heater, body of heater is provided with aspirating hole, in described body of heater, is provided with subiculum warming plate and thermal insulation cover, thermal insulation cover is placed on subiculum
On warming plate, thermal insulation cover and subiculum warming plate collectively form insulation cage, described thermal insulation cover connects to have can make on thermal insulation cover
The elevating lever of lower movement, is provided with crucible, crucible guard boards, graphite base plate, graphite cover plate, sidepiece add in described insulation cage
Hot device, top heater, heat exchange platform, described graphite base plate is placed on heat exchange platform, and crucible is placed on graphite base plate
On, crucible guard boards is arranged on outside crucible, and side heater is arranged on the outside of crucible guard boards, and graphite cover plate is arranged on crucible
Side, top heater is arranged on above graphite cover plate, and described heat exchange platform is fixed on bottom of furnace body, crucible by graphite column
The upper end of backplate is provided with exhaust emissions hole, also includes that air inlet pipe, one end of described air inlet pipe are connected with argon gas source, and the other end depends on
Secondary stretch in crucible after body of heater, thermal insulation cover, top heater, graphite cover plate, described air inlet pipe is provided with flow-control
Valve, described flow control valve connects and has control switch, and the described upper connection of control switch has timer.
Further, described air inlet pipe being provided with gas preheating unit, described gas preheating unit includes airtight cavity,
Being provided with heat exchanger tube in described cavity, the two ends of described heat exchanger tube extend respectively to outside cavity and connect with air inlet pipe, described argon
Argon in source flows in crucible along air inlet pipe, heat exchanger tube, air inlet pipe successively, and described heat exchanger tube seals with the junction of cavity,
Connecting on described cavity and have air entraining pipe and exhaustor, one end of described air entraining pipe connects with the aspirating hole arranged on body of heater, air entraining pipe
The other end connect with cavity inside, described air entraining pipe is provided with air pump, described exhaustor connects with cavity inside.
Further, described heat exchanger tube is metal coil pipe.
Further, described heat exchanger tube uses copper pipe to be made.
Further, described graphite cover plate is provided with multiple through hole.
Further, the uniform setting of the plurality of through hole.
Further, described bottom of furnace body is provided with overflow blanket, and described overflow blanket is four-layer structure, is followed successively by pin from top to bottom
Knit ceramic fibre blanket layer, knitting ceramic fibre blanket layer, ceramic fibre blanket layer, carbon felt layer, the thickness of described knitting ceramic fibre blanket layer
Degree is 10mm, the thickness of knitting ceramic fibre blanket layer is 10mm, the thickness of ceramic fibre blanket layer is 25mm, the thickness of carbon felt layer
Degree is 10mm.
Further, the upper surface of described overflow blanket is provided with overflow silk.
Further, described subiculum warming plate is provided with multiple spout hole.
Further, it is provided with carbon felt between described crucible and crucible guard boards.
The beneficial effects of the utility model are: this polycrystalline silicon ingot or purifying furnace, can be along with by arranging flow control valve in air inlet pipe
The continuous growth of silicon ingot, on the premise of ensureing that silicon ingot is not oxidized, by regulation flow control valve, is gradually reduced the confession of argon
Ying Liang, thus save argon, meanwhile, the supply of argon reduces to also avoid after argon enters body of heater discharges from aspirating hole again
During take away substantial amounts of heat, the energy consumption of heater can be substantially reduced, it is achieved energy-saving and emission-reduction, beneficially energy-conserving and environment-protective,
Simultaneously in order to flow automatic regulation control valve as required, thus reduce the labor intensity of workman, on described flow control valve
Connecting and have control switch, the described upper connection of control switch has timer, by presetting the time of timer, when timer arrives
Reaching the time of setting, control switch, and then be adjusted flow control valve, whole process carries out on-the-spot prison without workman
Control, greatly reduces the labor intensity of workman.
Accompanying drawing explanation
Fig. 1 is the structural representation of this utility model polycrystalline silicon ingot or purifying furnace;
Figure is labeled as: body of heater 1, aspirating hole 2, subiculum warming plate 3, thermal insulation cover 4, elevating lever 5, crucible 6, crucible guard boards
7, graphite base plate 8, graphite cover plate 9, side heater 10, top heater 11, heat exchange platform 12, exhaust emissions hole
13, air inlet pipe 14, argon gas source 15, gas preheating unit 16, cavity 161, heat exchanger tube 162, air entraining pipe 163, exhaustor
164, air pump 165, through hole 17, overflow blanket 18, flow control valve 19, spout hole 20, carbon felt 21, graphite column 22,
Control switch 23, timer 24.
Detailed description of the invention
Below in conjunction with the accompanying drawings this utility model is further illustrated.
As it is shown in figure 1, this polycrystalline silicon ingot or purifying furnace, including having the body of heater 1 of mezzanine space, body of heater 1 is provided with aspirating hole 2,
Being provided with subiculum warming plate 3 and thermal insulation cover 4 in described body of heater 1, thermal insulation cover 4 is placed on subiculum warming plate 3, thermal insulation cover 4
Collectively forming insulation cage with subiculum warming plate 3, described thermal insulation cover 4 connects the liter that thermal insulation cover 4 can be made to move up and down
Fall bar 5, is provided with crucible 6, crucible guard boards 7, graphite base plate 8, graphite cover plate 9, sidepiece heating in described insulation cage
Device 10, top heater 11, heat exchange platform 12, described graphite base plate 8 is placed on heat exchange platform 12, and crucible 6 is put
Putting on graphite base plate 8, crucible guard boards 7 is arranged on outside crucible 6, and side heater 10 is arranged on the outside of crucible guard boards 7,
Graphite cover plate 9 is arranged on above crucible 6, and top heater 11 is arranged on above graphite cover plate 9, described heat exchange platform 12
Being fixed on bottom body of heater 1 by graphite column 22, the upper end of crucible guard boards 7 is provided with exhaust emissions hole 13, also includes air inlet
Pipe 14, one end of described air inlet pipe 14 is connected with argon gas source 15, and the other end sequentially passes through body of heater 1, thermal insulation cover 4, top add
Stretch into after hot device 11, graphite cover plate 9 in crucible 6, described air inlet pipe 14 is provided with flow control valve 19, described flow control
Connecting on valve 19 processed and have control switch 23, described control switch 23 connects timer 24.This polycrystalline silicon ingot or purifying furnace passes through
Flow control valve 19 it is provided with in air inlet pipe 14, can be along with the continuous growth of silicon ingot, in the premise ensureing that silicon ingot is not oxidized
Under, by regulation flow control valve 19, it is gradually reduced the supply of argon, thus saves argon, meanwhile, the supply of argon
Reduce to also avoid after argon enters body of heater 1 and from aspirating hole 2, take away substantial amounts of heat during discharge again, can significantly drop
The energy consumption of low heater, it is achieved energy-saving and emission-reduction, beneficially energy-conserving and environment-protective, simultaneously in order to flow automatic regulation control as required
Valve 19 processed, thus reduce the labor intensity of workman, described flow control valve 19 connecting and has control switch 23, described control is opened
Close to connect on 23 and have timer 24, by presetting the time of timer 24, when timer 24 arrives the time set,
Controlling switch, and then be adjusted flow control valve 19, whole process carries out on-site supervision without workman, is substantially reduced
The labor intensity of workman.
Being provided with gas preheating unit 16 in described air inlet pipe 14, described gas preheating unit 16 includes airtight cavity 161,
Being provided with heat exchanger tube 162 in described cavity 161, the two ends of described heat exchanger tube 162 extend respectively to outside cavity 161 and and air inlet
Pipe 14 connects, and the argon in described argon gas source 15 flows in crucible 6 along air inlet pipe 14, heat exchanger tube 162, air inlet pipe 14 successively,
Described heat exchanger tube 162 seals with the junction of cavity 161, and described cavity 161 connects air entraining pipe 163 and exhaustor 164,
One end of described air entraining pipe 163 connects with the aspirating hole 2 arranged on body of heater 1, in the other end of air entraining pipe 163 and cavity 161
Portion connects, and described air entraining pipe 163 is provided with air pump 165, and described exhaustor 164 is internal with cavity 161 to be connected.Gas
The argon entered in body of heater 1 can be heated by preheating device 16, it is to avoid to body of heater in the argon entrance body of heater 1 that temperature is relatively low
Temperature in 1 causes large effect, during polycrystalline silicon ingot or purifying furnace works, it is ensured that the temperature in body of heater 1 keeps
In a stable scope, it is ensured that the Ingot quality finally grown up to reaches higher quality level, it addition, utilize air pump 165
The argon that given up by the high temperature that aspirating hole 2 is discharged is imported in cavity 161 by air entraining pipe 163, utilizes high temperature to give up argon to new argon
Preheat, not only can make full use of high temperature and give up the heat contained in argon, it is achieved energy-saving and emission-reduction, meanwhile, the argon being preheated
Gas is passed through in body of heater 1, it is possible to reduce argon takes away the heat in body of heater 1, realizes energy-saving and emission-reduction further, reduces the life of silicon ingot
Produce cost.
In order to improve heat exchange efficiency, extending heat-exchange time, described heat exchanger tube 162 is metal coil pipe.In order to improve heat exchange further
Efficiency, described heat exchanger tube 162 uses copper pipe to be made.
During long crystalline substance, crucible 6 is internal needs have certain thermograde from top to bottom, i.e. the temperature in crucible 6 to
Under be gradually reduced, thermograde change is the most obvious, and the speed of growth of ingot casting is the fastest, and the temperature of crucible 6 internal upper part is mainly by pushing up
Portion's heater 11 provides, and the heat of top heater 11 is delivered in crucible 6, due to through stone through after graphite cover plate 9 again
The obstruct of inky cap plate 9, the temperature above graphite cover plate 9 is higher than the temperature below graphite cover plate 9, due to existing polysilicon
Side heater 10 and the top heater 11 of ingot furnace are all uniformly controlled, and in crystal growing stage, temperature must control
In certain scope, here it is make side heater 10 all can only work with identical power, the most just with top heater 11
It is to say that the heat that side heater 10 and top heater 11 provide is certain, higher to the temperature making crucible 6 internal upper part,
It is necessary for enabling more heat to be delivered in crucible 6 through graphite cover plate 9, so that thermograde change is obvious in crucible 6,
This utility model provides a kind of simple and effective way and changes obvious purpose, i.e. described to thermograde in reaching crucible 6
Multiple through hole 17 it is provided with on graphite cover plate 9, by arranging multiple through hole 17 on graphite cover plate 9, top heater 11
Heat can be unseparated be delivered in crucible 6 by through hole 17 so that the temperature of crucible 6 internal upper part is for original
Can increase, so that the thermograde change in crucible 6 is substantially, and then increase the speed of growth of ingot casting, this mode
Only need to beat several through hole 17 on original graphite cover plate 9, substantially without increasing cost, reequip the most very convenient simultaneously.For
Make variations in temperature more uniform, the described uniform setting of through hole 17.
In use, it some times happens that the phenomenon of silicon hydrorrhea stream, once there is silicon hydrorrhea stream in polycrystalline silicon ingot or purifying furnace, overflow goes out
Silicon liquid can along heat exchange platform 12 flow to lower section subiculum warming plate 3 on, then silicon liquid drips from the edge of subiculum warming plate 3 again
Falling the bottom of body of heater 1, owing to silicon liquid temp is higher, silicon liquid is easy to burn thus accidents caused body of heater 1, in order to avoid
Body of heater 1 is burnt by the silicon liquid of overflow, is provided with overflow blanket 18 bottom described body of heater 1, the silicon liquid that overflow is gone out by overflow blanket 18 with
Body of heater 1 separates, and effectively prevent silicon liquid and is burnt by body of heater 1, even if overflow blanket 18 is burnt by silicon liquid, now the temperature of silicon liquid is also
Relatively low, body of heater 1 will not be caused the biggest loss.In order to prevent silicon liquid from being burnt by overflow blanket 18, described overflow blanket 18 is four
Rotating fields, is followed successively by knitting ceramic fibre blanket layer, knitting ceramic fibre blanket layer, ceramic fibre blanket layer, carbon felt layer from top to bottom,
The thickness of described knitting ceramic fibre blanket layer is 10mm, the thickness of knitting ceramic fibre blanket layer is 10mm, ceramic fibre blanket layer
Thickness is 25mm, the thickness of carbon felt layer is 10mm.
Whether there occurs silicon hydrorrhea stream to make operator know in time, the upper surface of described overflow blanket 18 is provided with overflow silk,
Silicon hydrorrhea stream once occurs, and the silicon liquid that overflow goes out falls and will be burnt by the overflow silk that be arranged on overflow blanket 18 surface after overflow blanket 18
Disconnected, overflow silk can send alarm signal after blowing, and prompting operator carry out associative operation.Owing to the silicon liquid stream of overflow is to subiculum
After warming plate 3, the edge of subiculum warming plate 3 to be flowed to could continue to dirty, thus causes overflow phenomena that a period of time occurs
Can monitor just rear, which adds the probability having an accident, therefore, in order to monitor whether quickly to there occurs silicon liquid
Overflow phenomena, described subiculum warming plate 3 is provided with multiple spout hole 20, by arranging spout hole 20 on subiculum warming plate 3,
When can directly from the overflow blanket 18 that spout hole 20 flows to lower section, and then being arranged on excessive after silicon liquid stream to subiculum warming plate 3
The overflow silk arranged on stream blanket 18 blows, thus reaches the purpose of fast monitored.
It addition, in order to make crucible 6 be uniformly heated, be provided with carbon felt 21, sidepiece between described crucible 6 and crucible guard boards 7
The heat of heater 10 passes to crucible 6 through carbon felt 21 again through after crucible guard boards 7, due to carbon felt 21 have preferably every
Hot heat-insulating property, therefore, heat will not fast strikethrough carbon felt 21 be delivered in crucible 6, and heat so can be made through carbon felt
Obtain homogenizing when 21, so that crucible 6 is heated evenly, the qualification rate of product can be improved.
Claims (10)
1. polycrystalline silicon ingot or purifying furnace, including having the body of heater (1) of mezzanine space, body of heater (1) is provided with aspirating hole (2), institute
Being provided with subiculum warming plate (3) and thermal insulation cover (4) in stating body of heater (1), thermal insulation cover (4) is placed on subiculum warming plate (3)
On, thermal insulation cover (4) and subiculum warming plate (3) collectively form insulation cage, and the upper connection of described thermal insulation cover (4) has and can make
The elevating lever (5) that thermal insulation cover (4) moves up and down, is provided with crucible (6), crucible guard boards (7), stone in described insulation cage
Ink base plate (8), graphite cover plate (9), side heater (10), top heater (11), heat exchange platform (12), described
Graphite base plate (8) is placed on heat exchange platform (12), and crucible (6) is placed on graphite base plate (8), crucible guard boards (7)
Being arranged on crucible (6) outside, side heater (10) is arranged on the outside of crucible guard boards (7), and graphite cover plate (9) is arranged
In crucible (6) top, top heater (11) is arranged on graphite cover plate (9) top, and described heat exchange platform (12) is led to
Crossing graphite column (22) and be fixed on body of heater (1) bottom, the upper end of crucible guard boards (7) is provided with exhaust emissions hole (13), also
Including air inlet pipe (14), one end of described air inlet pipe (14) is connected with argon gas source (15), the other end sequentially pass through body of heater (1),
Stretch in crucible (6) after thermal insulation cover (4), top heater (11), graphite cover plate (9), it is characterised in that: described air inlet
Being provided with flow control valve (19) on pipe (14), the upper connection of described flow control valve (19) has control switch (23), described
Control the upper connection of switch (23) and have timer (24).
2. polycrystalline silicon ingot or purifying furnace as claimed in claim 1, it is characterised in that: it is provided with gas in described air inlet pipe (14) pre-
Thermal (16), described gas preheating unit (16) includes airtight cavity (161), and described cavity is provided with in (161)
Heat exchanger tube (162), the two ends of described heat exchanger tube (162) extend respectively to cavity (161) and outward and connect with air inlet pipe (14),
Argon in described argon gas source (15) flows into crucible (6) along air inlet pipe (14), heat exchanger tube (162), air inlet pipe (14) successively
In, described heat exchanger tube (162) seals with the junction of cavity (161), and the upper connection of described cavity (161) has air entraining pipe (163)
With exhaustor (164), one end of described air entraining pipe (163) aspirating hole (2) of arranging upper with body of heater (1) connects, air entraining pipe
(163) the other end is internal with cavity (161) to be connected, and described air entraining pipe (163) is provided with air pump (165), described
Exhaustor (164) is internal with cavity (161) to be connected.
3. polycrystalline silicon ingot or purifying furnace as claimed in claim 2, it is characterised in that: described heat exchanger tube (162) is metal coil pipe.
4. polycrystalline silicon ingot or purifying furnace as claimed in claim 3, it is characterised in that: described heat exchanger tube (162) uses copper pipe to make
Form.
5. polycrystalline silicon ingot or purifying furnace as claimed in claim 4, it is characterised in that: it is provided with multiple on described graphite cover plate (9)
Through hole (17).
6. polycrystalline silicon ingot or purifying furnace as claimed in claim 5, it is characterised in that: the plurality of through hole (17) uniform setting.
7. polycrystalline silicon ingot or purifying furnace as claimed in claim 6, it is characterised in that: described body of heater (1) bottom is provided with overflow blanket
(18), described overflow blanket (18) is four-layer structure, is followed successively by knitting ceramic fibre blanket layer, knitting ceramic fiber blanket from top to bottom
Layer, ceramic fibre blanket layer, carbon felt layer, the thickness of described knitting ceramic fibre blanket layer is 10mm, knitting ceramic fibre blanket layer
Thickness is 10mm, the thickness of ceramic fibre blanket layer is 25mm, the thickness of carbon felt layer is 10mm.
8. polycrystalline silicon ingot or purifying furnace as claimed in claim 7, it is characterised in that: the upper surface of described overflow blanket (18) is provided with
Overflow silk.
9. polycrystalline silicon ingot or purifying furnace as claimed in claim 8, it is characterised in that: it is provided with many on described subiculum warming plate (3)
Individual spout hole (20).
10. polycrystalline silicon ingot or purifying furnace as claimed in claim 9, it is characterised in that: described crucible (6) and crucible guard boards (7)
Between be provided with carbon felt (21).
Priority Applications (1)
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CN201620491532.4U CN205635856U (en) | 2016-05-26 | 2016-05-26 | Polysilicon ingot furnace |
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CN201620491532.4U CN205635856U (en) | 2016-05-26 | 2016-05-26 | Polysilicon ingot furnace |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117779179A (en) * | 2024-02-23 | 2024-03-29 | 苏州优晶半导体科技股份有限公司 | Single crystal growth device and single crystal growth method |
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2016
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN117779179A (en) * | 2024-02-23 | 2024-03-29 | 苏州优晶半导体科技股份有限公司 | Single crystal growth device and single crystal growth method |
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