CN101319351B - Monocrystalline growing furnace - Google Patents
Monocrystalline growing furnace Download PDFInfo
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- CN101319351B CN101319351B CN2008101227233A CN200810122723A CN101319351B CN 101319351 B CN101319351 B CN 101319351B CN 2008101227233 A CN2008101227233 A CN 2008101227233A CN 200810122723 A CN200810122723 A CN 200810122723A CN 101319351 B CN101319351 B CN 101319351B
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- single crystal
- growing furnace
- crystal growing
- guiding device
- airflow guiding
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Abstract
The invention provides a single-crystal furnace in order to discharge mixed gas in the single-crystal furnace in time and solve the technical problem of reducing the consumption of heat energy and argon gas. The single-crystal furnace comprises an air flow guide device which is arranged between the lower part of a crucible supporter of the single-crystal furnace and an air outlet at the bottom of the single-crystal furnace, wherein, the air flow guide device is bowl-shaped and comprises a center shaft hole which is arranged on the bottom center of the air flow guide device, a pair of electrode holes which are arranged on both sides of the center shaft hole, and ventholes which are arranged on both sides of the center shaft hole and opposite to the air outlet of the single-crystal furnace; a graphite center shaft of the single-crystal furnace passes through the center shaft hole of the air flow guide device; a pair of electrode poles of the single-crystal furnace respectively pass through the electrode holes; the air outlet of the single-crystal furnace is communicated with the ventholes of the air flow guide device; and the upper end part of the air flow guide device is arranged between an insulated cylinder and a heating element.
Description
Technical field
The present invention relates to a kind of single crystal growing furnace, the thermal field air-flow that is specifically related to single crystal growing furnace is discharged liner.
Background technology
The single crystal growing furnace diagrammatic cross-section of Fig. 1 for cutting krousky (vertical pulling) manufactured silicon single-crystal; Omitted supporting structure, bell, crystal in the drawings and lifted cabin, lifting rod, form part, the single crystal growing furnace shell is made by stainless steel.Among the figure, 1 is seed crystal, 3 is silicon single crystal bar, 4 is loam cake, 5 is the carbon lagging material, and 6 is the temperature signal hole, and 7 is that the heating element, 8 of graphite is for crystal growing chamber, 9 is venting port, 10 for anti-drain cap, 11 be the graphite axis, 12 for the carbon thermal insulation layer, 13 for silicon melt, 14 for the crucible supporting apparatus of graphite, 16 for quartz crucible, 17 be that heat-preservation cylinder, 18 is the heat-preservation cylinder base.Heating element links to each other with power supply by the pair of electrodes post 15 among Fig. 5.
Czochralski silicon monocrystal constantly charges into argon gas in necessary for growth in single crystal growing furnace, and with stove in the silicon monoxide and the impurity mix dust that generate, because well heater in the single crystal growing furnace and crucible supporting apparatus etc. are made by graphite, device and impurity dust that the perishable described graphite of silicon monoxide is made easily are adsorbed on these devices, thereby have influenced the work-ing life of single crystal growing furnace.Therefore, when in single crystal growing furnace, constantly charging into argon gas, also must mixed gas be discharged out of the furnace with vacuum pump; When exhaust, flow through well heater in the stove, crucible supporting apparatus etc. of mixed gas are located, and discharge through the venting port of stove lower end at last.
The weak point of the single crystal growing furnace of above-mentioned Fig. 1 is: the monocrystalline furnace inner space is bigger, and especially the space of crucible supporting apparatus below is bigger, causes the mixed gas of crucible supporting apparatus below in time not discharge, and heat energy and argon gas consumption are bigger.
Chinese patent literature CN1205362C discloses a kind of flow controlling method of air and device of straight pulling silicon single crystal furnace thermal field, it is included between indoor graphite heater of single crystal growing furnace crystal growth and heat-preservation cylinder the sealing gas operated device is housed, make airway and the venting port of the air-flow of the argon gas that contains silicon monoxide through the sealing gas operated device, under the effect of vacuum pump, discharge out of the furnace.The sealing airway device is made up of airway, base, wear ring, venting port, is installed between graphite heater and the heat-preservation cylinder.
Above-mentioned the deficiencies in the prior art part is: the mixed gas of the crucible supporting apparatus below of single crystal growing furnace can not effectively be discharged, thereby the silicon monoxide in the mixed gas is corroded well heater and crucible, influences the work-ing life of single crystal growing furnace.
Summary of the invention
The purpose of this invention is to provide a kind of mixed gas that is easy in time discharge in the single crystal growing furnace, and can reduce the single crystal growing furnace of heat energy and argon gas consumption.
The technical scheme that realizes the object of the invention provides a kind of single crystal growing furnace, and it comprises: be located at the crucible supporting apparatus below of single crystal growing furnace and the airflow guiding device between the venting port bottom the single crystal growing furnace; The bowl-type of this airflow guiding device for making by graphite, it comprises: be located at the airflow guiding device bottom center central axis hole, be located at the pair of electrodes hole of described central axis hole both sides and be located at described central axis hole both sides and the ventilating pit relative with the venting port of single crystal growing furnace; The graphite axis of single crystal growing furnace passes the central axis hole of described airflow guiding device, the pair of electrodes post of single crystal growing furnace passes described electrode hole respectively, the venting port of single crystal growing furnace is connected with each ventilating pit of airflow guiding device, and the upper end of airflow guiding device is located between the heat-preservation cylinder and heating element of single crystal growing furnace.
The central axis hole of described airflow guiding device is connected with the graphite axis movable sealing of single crystal growing furnace, to prevent influencing exhaust effect because of the gap between this central axis hole and the graphite axis leaks gas.
The electrode hole of described airflow guiding device is tightly connected with the electrode column of single crystal growing furnace respectively, to prevent influencing exhaust effect because of the gap between this electrode hole and the electrode column leaks gas.
The outer wall of the upper end of described airflow guiding device and the heat-preservation cylinder of single crystal growing furnace are tightly connected, to prevent influencing exhaust effect because of the gap between the heat-preservation cylinder of the outer wall of the upper end of airflow guiding device and single crystal growing furnace leaks gas.
Each ventilating pit of described airflow guiding device is connected by ventpipe with the venting port of single crystal growing furnace, to improve exhaust effect.
Described airflow guiding device is made by graphite, graphite have intensity height, good thermal shock, high temperature resistant, anti-oxidant, specific resistance is little, corrosion-resistant, be easy to advantages such as accurate machining.
The present invention has positive effect: in (1) single crystal growing furnace of the present invention, the airflow guiding device of bowl-type is located between the venting port of crucible supporting apparatus below and single crystal growing furnace bottom, and the central axis hole of airflow guiding device and pair of electrodes hole are equipped with the graphite axis and the pair of electrodes hole of single crystal growing furnace respectively, reduced the furnace inner space of single crystal growing furnace effectively, be convenient in time the mixed gas of silicon monoxide in the single crystal growing furnace and argon gas be discharged rapidly, and be beneficial to the consumption that reduces heat energy and argon gas, make original seeding power reduce to 61KW from 65KW; In addition, because the venting port of single crystal growing furnace is connected with each ventilating pit of airflow guiding device, the silicon monoxide in the whole single crystal growing furnace and the mixed gas of argon gas (mixed gas that comprises crucible supporting apparatus below) can discharge out of the furnace unobstructedly, there is not the not smooth place of exhaust in the whole single crystal growing furnace, promptly there is not the exhaust dead angle, both prevented of the corrosion of silicon monoxide gas effectively to graphite devices such as well heater and crucible supporting apparatuss, also can make the impurity dust that is adsorbed on these graphite devices reduce more than 30%, thereby guaranteed the work-ing life of single crystal growing furnace, is increased to 110 heats more than from 90 original heats the work-ing life of described graphite device, also can play stabilization in addition to the process of growth of silicon crystal, average yield rate is increased to more than 68% from original 65%, and can improves the inner quality of monocrystalline.The a pair of ventilating pit of airflow guiding device of the present invention and a pair of venting port of single crystal growing furnace are oppositely arranged, and have shortened exhaust line, are beneficial to the raising exhaust efficiency.
Description of drawings
Fig. 1 is the cross-sectional view of the single crystal growing furnace of cutting krousky (vertical pulling) manufactured silicon single-crystal of prior art;
Fig. 2 is the structural representation of the airflow guiding device of single crystal growing furnace among the embodiment 1;
Fig. 3 is the A-A cross section view of Fig. 2;
Fig. 4 is the B-B cross section view of Fig. 2;
Fig. 5 is the cross-sectional view of single crystal growing furnace among the embodiment 1;
Fig. 6 is another cross-sectional view of single crystal growing furnace among the embodiment 1.
Embodiment
(embodiment 1)
See Fig. 2-6, the single crystal growing furnace of present embodiment comprises: be located at crucible supporting apparatus 14 belows of single crystal growing furnace and the airflow guiding device 2 between the venting port 9 bottom the single crystal growing furnace; This airflow guiding device 2 is a bowl-type, and it comprises: be located at airflow guiding device 2 bottom center central axis hole 2-1, be located at the pair of electrodes hole 2-2 of described central axis hole 2-1 both sides and be located at described central axis hole 2-1 both sides and the ventilating pit 2-3 relative with the venting port 9 of single crystal growing furnace; The graphite axis 11 of single crystal growing furnace passes the central axis hole 2-1 of described airflow guiding device 2, the pair of electrodes post 15 of single crystal growing furnace passes described electrode hole 2-2 respectively, the venting port 9 of single crystal growing furnace is connected with each ventilating pit 2-3 of airflow guiding device 2, and the upper end 2-4 of airflow guiding device 2 is located between the heat-preservation cylinder 17 and heating element 7 of single crystal growing furnace.
Before single crystal growing furnace work, by the vacuum pump of being located on the venting port 9 air in the single crystal growing furnace is drained, charge into argon gas from the single crystal growing furnace upper end then.During work, quartz crucible top in the single crystal growing furnace constantly has silicon monoxide and dust impurity to generate, therefore when constantly charging into argon gas, described vacuum pump is discharged the mixed gas of silicon monoxide, dust impurity and argon gas etc. simultaneously, wherein, the gas flow process is from the gap of quartz crucible top between crucible supporting apparatus 14 and heating element 7, and the inflow of the gap between heating element 7 and the heat-preservation cylinder 17 airflow guiding device 2, a pair of ventilating pit 2-3 of the airflow guiding device in Fig. 62, ventpipe 19 are discharged from venting port 9 then.
The airflow guiding device 2 of present embodiment can effectively reduce the furnace inner space (the especially space of crucible supporting apparatus 14 belows) of single crystal growing furnace, is convenient to exhaust, and is beneficial to the consumption that reduces heat energy and argon gas; In addition, because the venting port 9 of single crystal growing furnace is connected with each ventilating pit 2-3 of airflow guiding device 2, the silicon monoxide in the whole single crystal growing furnace and the mixed gas (mixed gas that comprises crucible supporting apparatus 14 belows) of argon gas can discharge out of the furnace unobstructedly, there is not the exhaust dead angle in the whole single crystal growing furnace, both prevented of the corrosion of silicon monoxide gas effectively to graphite devices such as well heater 7 and crucible supporting apparatuss 14, can prevent effectively that also the impurity dust is adsorbed on these graphite devices, thus the work-ing life of having guaranteed single crystal growing furnace.The a pair of ventilating pit 2-3 of airflow guiding device 2 and a pair of venting port 9 of single crystal growing furnace are oppositely arranged, and have shortened the length of exhaust line, are beneficial to the raising exhaust efficiency.
See Fig. 5-6, the central axis hole 2-1 of described airflow guiding device 2 is connected with graphite axis 11 movable sealings of single crystal growing furnace, to prevent influencing exhaust effect because of the gap between this central axis hole 2-1 and the graphite axis 11 leaks gas.
See Fig. 5, the electrode hole 2-2 of described airflow guiding device 2 is tightly connected with the electrode column 15 of single crystal growing furnace respectively, to prevent influencing exhaust effect because of the gap between this electrode hole 2-2 and the electrode column 15 leaks gas.
See Fig. 5 or 6, the outer wall of the upper end 2-4 of described airflow guiding device 2 and the heat-preservation cylinder 17 of single crystal growing furnace are tightly connected, to prevent influencing exhaust effect because of the gap between the heat-preservation cylinder 17 of the outer wall of the upper end 2-4 of airflow guiding device 2 and single crystal growing furnace leaks gas.
See Fig. 6, described airflow guiding device 2 each ventilating pit 2-3 are connected by ventpipe 19 with the venting port 9 of single crystal growing furnace, to improve exhaust effect.
Described airflow guiding device 2 is made by graphite, graphite have intensity height, good thermal shock, high temperature resistant, anti-oxidant, specific resistance is little, corrosion-resistant, be easy to advantages such as accurate machining.
Obviously, the above embodiment of the present invention only is for example of the present invention clearly is described, and is not to be qualification to embodiments of the present invention.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here need not also can't give exhaustive to all embodiments.And these belong to conspicuous variation or the change that spirit of the present invention extended out and still are among protection scope of the present invention.
Claims (5)
1. a single crystal growing furnace is characterized in that: comprising: be located at crucible supporting apparatus (14) below of single crystal growing furnace and the airflow guiding device (2) between the venting port (9) bottom the single crystal growing furnace;
The bowl-type of this airflow guiding device (2) for making by graphite, it comprises: be located at airflow guiding device (2) bottom center central axis hole (2-1), be located at described central axis hole (2-1) both sides pair of electrodes hole (2-2), be located at described central axis hole (2-1) both sides and the ventilating pit (2-3) relative with the venting port (9) of single crystal growing furnace; The graphite axis (11) of single crystal growing furnace passes the central axis hole (2-1) of described airflow guiding device (2), the pair of electrodes post (15) of single crystal growing furnace passes described electrode hole (2-2) respectively, the venting port of single crystal growing furnace (9) is connected with each ventilating pit (2-3) of airflow guiding device (2), and the upper end (2-4) of airflow guiding device (2) is located between the heat-preservation cylinder (17) and heating element (7) of single crystal growing furnace.
2. single crystal growing furnace according to claim 1 is characterized in that: the central axis hole (2-1) of described airflow guiding device (2) is connected with graphite axis (11) movable sealing of single crystal growing furnace.
3. single crystal growing furnace according to claim 1 and 2 is characterized in that: the electrode hole (2-2) of described airflow guiding device (2) is tightly connected with the electrode column (15) of single crystal growing furnace respectively.
4. single crystal growing furnace according to claim 3 is characterized in that: the outer wall of the upper end (2-4) of described airflow guiding device (2) and the heat-preservation cylinder (17) of single crystal growing furnace are tightly connected.
5. single crystal growing furnace according to claim 4 is characterized in that: each ventilating pit of described airflow guiding device (2) (2-3) is connected by ventpipe (19) with the venting port (9) of single crystal growing furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101227233A CN101319351B (en) | 2008-06-26 | 2008-06-26 | Monocrystalline growing furnace |
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| CN2008101227233A CN101319351B (en) | 2008-06-26 | 2008-06-26 | Monocrystalline growing furnace |
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| CN101319351A CN101319351A (en) | 2008-12-10 |
| CN101319351B true CN101319351B (en) | 2010-04-21 |
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| CN2008101227233A Expired - Fee Related CN101319351B (en) | 2008-06-26 | 2008-06-26 | Monocrystalline growing furnace |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101525765B (en) * | 2009-04-17 | 2012-09-26 | 江苏华盛天龙光电设备股份有限公司 | Thermal field of silicon single crystal growth |
| CN101717991B (en) * | 2009-12-14 | 2012-02-29 | 晶龙实业集团有限公司 | Improved czochralski silicon monocrystalline furnace |
| CN102094699A (en) * | 2010-12-15 | 2011-06-15 | 杭州银轮科技有限公司 | Static mixer for diesel engine urea selective catalytic reduction device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1412353A (en) * | 2001-10-18 | 2003-04-23 | 北京有色金属研究总院 | Gas flow control method of thermal field of vertical pulling silicon monocrystal furnace and its device |
| CN200974872Y (en) * | 2006-11-01 | 2007-11-14 | 新疆新能源股份有限公司 | Vertical pulling monocrystalline furnace having shielding gas control device |
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2008
- 2008-06-26 CN CN2008101227233A patent/CN101319351B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1412353A (en) * | 2001-10-18 | 2003-04-23 | 北京有色金属研究总院 | Gas flow control method of thermal field of vertical pulling silicon monocrystal furnace and its device |
| CN200974872Y (en) * | 2006-11-01 | 2007-11-14 | 新疆新能源股份有限公司 | Vertical pulling monocrystalline furnace having shielding gas control device |
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