CN203774367U - Flip package main heat dissipation channel middle protruding-type full-metal composite substrate - Google Patents

Abstract

A flip package main heat dissipation channel middle protruding-type full-metal composite substrate comprises two P electrode fixed connection plates used for fixed connection with the P electrodes of LED chips and a copper substrate with two sides provided with P electrode fixed connection plate embedding notches. The two P electrode fixed connection plates used for fixed connection with the P electrodes of the LED chips are copper plates or copper-clad ceramic plates and are embedded in the P electrode fixed connection plate embedding notches in the two sides of the copper substrate. During use, the copper substrate is fixedly connected with the N electrodes of the LED chips and each of the P electrode fixed connection plates on the two sides of the copper substrate is fixedly connected with the P electrodes of a part of the LED chips. The copper substrate fixedly connected with the N electrodes of the LED chips has excellent heat conduction performance and has joint faces which are adaptive to the chip heat dissipation mission undertaken by the N electrodes of the LED chips and are connected with the N electrodes of the LED chips, so that the heat conductivity of heat dissipation of the packaged LED chips approximates the heat conductivity of copper, the effect is remarkable and the heat dissipation requirements of package of a plurality of large-power LED chips and dense use of a plurality of LED chips are met.

Description

In the main heat dissipation channel of flip-chip packaged, convex all-metal compound closes substrate

Technical field

The utility model relates to a kind of LED chip base plate for packaging, and particularly in the main heat dissipation channel of a kind of flip-chip packaged, convex all-metal compound closes substrate.

Background technology

Semiconductor light-emitting-diode LED is a kind of novel solid luminescent device, since being born, it is with power saving, life-span is long, environmental protection, vibration resistance, the characteristic that fast response time etc. are intrinsic, be widely used in indicator light, signal lamp, display screen, the fields such as Landscape Lighting, but due to luminance difference, all the time affect its application to the extremely high efficiency lighting source market expansion, trace it to its cause is because LED can emit a large amount of heat in the process of work, and the raising along with power, the heat meeting sharp increase of emitting, make tube core junction temperature increase rapidly, it is large that thermal resistance becomes, thereby have influence on the performance of device, thereby concerning LED device, scientifically by heat radiation, reduce thermal resistance and junction temperature is most important, for this reason, people have soundd out various means, but effect is all undesirable, nowadays the heat radiation of LED has become an important technology difficult problem that hinders its application extension.

LED chip has dividing of positive cartridge chip and flip-chip, and its base plate for packaging also has supports that the resin substrate of the following LED of 0.5W and the metal system of the above LED of support 0.5W and pottery are that substrate is other.Adopting metal is the positive cartridge chip of great power LED of substrate package, take and adopts aluminum substrate as example, the thermally conductive pathways of (as shown in Figure 1) after encapsulation: PN junction → Sapphire Substrate → aluminium base Copper Foil → dielectric → aluminium base; Adopting metal is the high power LED flip-chip of substrate package, take and adopts aluminum substrate as example, the thermally conductive pathways of (as shown in Figure 2) after encapsulation: PN junction → aluminium base Copper Foil → dielectric → aluminium base, due to the pyroconductivity of link (W/mK) wherein:

Sapphire Substrate 42

Copper Foil 388

Dielectric 1～2

Aluminium base 203

Therefore no matter be positive cartridge chip, or flip-chip, the pyroconductivity of the LED chip heat radiation after encapsulation can not surpass 1～2W/mK.

Adopting pottery is the positive cartridge chip of great power LED of substrate package, take and adopts aluminum nitride ceramic substrate as example, the thermally conductive pathways of (as shown in Figure 3) after encapsulation: PN junction → Sapphire Substrate → aluminum nitride ceramic substrate Copper Foil → aluminum nitride ceramic substrate; Adopting pottery is the high power LED flip-chip of substrate package, the employing aluminum nitride ceramic substrate of take is example, the thermally conductive pathways of (as shown in Figure 4) after encapsulation: PN junction → aluminum nitride ceramic substrate Copper Foil → aluminum nitride ceramic substrate, due to the pyroconductivity of link (W/mK) wherein:

Sapphire Substrate 42

Copper Foil 388

Aluminum nitride ceramic substrate 200

After encapsulation, the pyroconductivity of formal dress chip cooling can not surpass 42 W/mK, and the pyroconductivity of flip-chip heat radiation can not surpass 200W/mK.

But LED chip, its heat radiation is also not only relevant with the encapsulating material of selecting, also relevant with the composition surface size of encapsulating material with chip.We are through studying and find for a long time: the N utmost point of LED chip and the P utmost point have huge outer engagement face difference, and Area Ratio is up to 6～9 ︰ 1; The LED chip of upside-down mounting, the N utmost point is being born the main heat radiation task of LED chip, yet this feature with LED chip that the substrate affixed LED chip N utmost point that present LED chip flip-chip packaged is used and the Copper Foil size of the P utmost point but do not design adapts, cause LED chip heat radiation to be obstructed, also do not reach due radiating effect.

Summary of the invention

Technical problem to be solved in the utility model is the deficiency that overcomes above-mentioned existing LED chip base plate for packaging, and provides convex all-metal compound in the main heat dissipation channel of a kind of flip-chip packaged of LED chip to close substrate.

The technical scheme in the invention for solving the technical problem is: in the main heat dissipation channel of a kind of flip-chip packaged, convex all-metal compound closes substrate, the copper base that it all has the extremely affixed plate setting-in of P breach by two extremely affixed plates of the P for the affixed LED chip P utmost point and both sides forms, its extremely affixed plate of two P for the affixed LED chip P utmost point is copper coin, is inlaid in respectively in the extremely affixed plate setting-in of the P breach of offering on copper base both sides with high heat conductive insulating glue; Or cover copper ceramic wafer, with golden WU alloy welding, be inlaid in respectively in the extremely affixed plate setting-in of the P breach of offering on copper base both sides.

In the main heat dissipation channel of this flip-chip packaged provided by the utility model, convex all-metal compound closes substrate, during use with the N utmost point of affixed each LED chip of copper base, the P utmost point with extremely affixed each the affixed a part of LED chip of plate of P on the copper base both sides that are placed in, because the copper base of the affixed LED chip N utmost point has outstanding heat-conductive characteristic and has again the composition surface that is connected each LED chip N utmost point that the chip cooling task size born with each LED chip N utmost point adapts, thereby the pyroconductivity of the LED chip of encapsulation heat radiation is close to the pyroconductivity of copper, effect is splendid, can fully meet the heat radiation requirement of a plurality of high-power LED chip packages and a large amount of intensive uses of LED chip.

Accompanying drawing explanation

Fig. 1 is for adopting the schematic diagram of the great power LED formal dress chip cooling structure of aluminum substrate encapsulation;

Fig. 2 is for adopting the schematic diagram of the high power LED flip-chip radiator structure of aluminum substrate encapsulation;

Fig. 3 is for adopting the schematic diagram of the great power LED formal dress chip cooling structure of aluminum nitride ceramic substrate encapsulation;

Fig. 4 is for adopting the schematic diagram of the high power LED flip-chip radiator structure of aluminum nitride ceramic substrate encapsulation;

Fig. 5 is the structural representation that in the main heat dissipation channel of employing flip-chip packaged provided by the utility model, convex all-metal compound closes substrate package high-power LED chip;

Fig. 6 is the electrical schematic diagram that in the main heat dissipation channel of employing flip-chip packaged provided by the utility model, convex all-metal compound closes substrate package high-power LED chip;

Mark in figure: 1---LED chip, 11---the N utmost point, 12---the P utmost point, 13---PN junction, 14---Sapphire Substrate, 21---Copper Foil, 22---dielectric, 23---substrate, 31---copper base, 32---the extremely affixed plate of P, 33---high heat conductive insulating glue or golden WU alloy.

Embodiment

With reference to accompanying drawing 5～6, the utility model provides convex all-metal compound in the main heat dissipation channel of a kind of flip-chip packaged to close substrate, and the copper base 31 that it all has the extremely affixed plate setting-in of P breach by two extremely affixed plates 32 of the P for the affixed LED chip P utmost point and both sides forms.

Embodiment 1, in the main heat dissipation channel of above-mentioned flip-chip packaged, convex all-metal compound closes substrate, its extremely affixed plate 32 of two P for the affixed LED chip P utmost point is copper coins, with ST0903 heat conduction bonded adhesives (high heat conductive insulating glue), pastes and is inlaid in respectively in the extremely affixed plate setting-in of the P breach of offering on copper base 31 both sides.

Embodiment 2, in the main heat dissipation channel of above-mentioned flip-chip packaged, convex all-metal compound closes substrate, its extremely affixed plate 32 of two P for the affixed LED chip P utmost point is to cover copper alumina ceramic plate or cover copper al nitride ceramic board, with golden WU alloy welding, is inlaid in respectively in the extremely affixed plate setting-in of the P breach of offering on copper base 31 both sides.

Claims (3)

1. in the main heat dissipation channel of flip-chip packaged, convex all-metal compound closes substrate, it is characterized in that: the copper base (31) that it all has the extremely affixed plate setting-in of P breach by two extremely affixed plates of the P for the affixed LED chip P utmost point (32) and both sides forms, its extremely affixed plates of two P (32) for the affixed LED chip P utmost point are copper coins, are inlaid in respectively in the extremely affixed plate setting-in of the P breach of offering on copper base (31) both sides with high heat conductive insulating glue; Or cover copper ceramic wafer, with golden WU alloy welding, be inlaid in respectively in the extremely affixed plate setting-in of the P breach of offering on copper base (31) both sides.

2. in the main heat dissipation channel of flip-chip packaged according to claim 1, convex all-metal compound closes substrate, it is characterized in that: its extremely affixed plates of two P (32) for the affixed LED chip P utmost point are to cover copper alumina ceramic plate.

3. in the main heat dissipation channel of flip-chip packaged according to claim 1, convex all-metal compound closes substrate, it is characterized in that: its extremely affixed plates of two P (32) for the affixed LED chip P utmost point are to cover copper al nitride ceramic board.