CN203774368U

CN203774368U - Flip package main heat radiation channel bias-type full metal composite substrate

Info

Publication number: CN203774368U
Application number: CN201420163720.5U
Authority: CN
Inventors: 李亚平; 荆允昌; 李彦卿
Original assignee: HEBEI DAQI OPTOELECTRONICS TECHNOLOGY Co Ltd
Current assignee: HEBEI DAQI OPTOELECTRONICS TECHNOLOGY Co Ltd
Priority date: 2014-04-04
Filing date: 2014-04-04
Publication date: 2014-08-13
Anticipated expiration: 2024-04-04

Abstract

The utility model provides a flip package main heat radiation channel bias-type full metal composite substrate which is formed by a P electrode fixed connection plate used for fixed connection with the P electrode of an LED chip and a copper substrate with one side provided with a P electrode fixed connection plate embedding notch. The P electrode fixed connection plate used for fixed connection with the P electrode of the LED chip is a copper plate or a copper-clad ceramic plate and is embedded in the P electrode fixed connection plate embedding notch in one side of the copper substrate. During use, the P electrode fixed connection plate is fixedly connected with the P electrode of the LED chip and the copper substrate is fixedly connected with the N electrode of the LED chip. The copper substrate fixedly connected with the N electrode of the LED chip is of excellent heat conduction performance and is provided with a joint face which is adaptive to the chip heat dissipation mission undertaken by the N electrode of the LED chip and is connected with the N electrode of the LED chip, so that the heat conductivity of the heat dissipation of the packaged LED chip approximates the heat conductivity of copper, the effect is remarkable, and the heat dissipation requirements of large-power LED chip package and dense use of a plurality of LED chips are met.

Description

The compound substrate of the main heat dissipation channel eccentrically arranged type of flip-chip packaged all-metal

Technical field

The utility model relates to a kind of LED chip base plate for packaging, particularly the compound substrate of the main heat dissipation channel eccentrically arranged type of a kind of flip-chip packaged all-metal.

Background technology

Semiconductor light-emitting-diode LED is a kind of novel solid luminescent device, since being born, it is with power saving, life-span is long, environmental protection, vibration resistance, the characteristic that fast response time etc. are intrinsic, be widely used in indicator light, signal lamp, display screen, the fields such as Landscape Lighting, but due to luminance difference, all the time affect its application to the extremely high efficiency lighting source market expansion, trace it to its cause is because LED can emit a large amount of heat in the process of work, and along with the raising of power, the heat meeting sharp increase of emitting, make tube core junction temperature increase rapidly, it is large that thermal resistance becomes, thereby have influence on the performance of device, thereby concerning LED device, scientifically reduce thermal resistance by heat radiation and junction temperature is most important, for this reason, people have soundd out various means, but effect is all undesirable, nowadays the heat radiation of LED has become an important technology difficult problem that hinders its application extension.

LED chip has dividing of positive cartridge chip and flip-chip, and its base plate for packaging also has supports that the resin substrate of the following LED of 0.5W and metal system and the pottery of supporting the above LED of 0.5W are that substrate is other.Adopting metal is the positive cartridge chip of great power LED of substrate package, to adopt aluminum substrate as example, and the thermally conductive pathways of (as shown in Figure 1) after encapsulation: PN junction → Sapphire Substrate → aluminium base Copper Foil → dielectric → aluminium base; Adopting metal is the high power LED flip-chip of substrate package, to adopt aluminum substrate as example, and the thermally conductive pathways of (as shown in Figure 2) after encapsulation: PN junction → aluminium base Copper Foil → dielectric → aluminium base, due to the pyroconductivity of link (W/mK) wherein:

Therefore no matter be positive cartridge chip, or flip-chip, the pyroconductivity of the LED chip heat radiation after encapsulation can not exceed 1～2W/mK.

Adopting pottery is the positive cartridge chip of great power LED of substrate package, to adopt aluminum nitride ceramic substrate as example, and the thermally conductive pathways of (as shown in Figure 3) after encapsulation: PN junction → Sapphire Substrate → aluminum nitride ceramic substrate Copper Foil → aluminum nitride ceramic substrate; Adopting pottery is the high power LED flip-chip of substrate package, to adopt aluminum nitride ceramic substrate as example, the thermally conductive pathways of (as shown in Figure 4) after encapsulation: PN junction → aluminum nitride ceramic substrate Copper Foil → aluminum nitride ceramic substrate, due to the pyroconductivity of link (W/mK) wherein:

Sapphire Substrate 42

Copper Foil 388

Aluminum nitride ceramic substrate 200

After encapsulation, the pyroconductivity of formal dress chip cooling can not exceed 42W/mK, and the pyroconductivity of flip-chip heat radiation can not exceed 200W/mK.

But LED chip, its heat radiation is also not only relevant with the encapsulating material of selecting, also relevant with the composition surface size of encapsulating material with chip.We are through studying and find for a long time: the N utmost point of LED chip and the P utmost point have huge outer engagement face difference, and Area Ratio is up to 6～9 ︰ 1; The LED chip of upside-down mounting, the N utmost point is being born the main heat radiation task of LED chip, but the Copper Foil size of the substrate affixed LED chip N utmost point that present LED chip flip-chip packaged is used and the P utmost point this feature that but do not design and LED chip adapts, cause LED chip heat radiation to be obstructed, also do not reach due radiating effect.

Summary of the invention

Technical problem to be solved in the utility model is the deficiency that overcomes above-mentioned existing LED chip base plate for packaging, and provides a kind of flip-chip packaged main heat dissipation channel eccentrically arranged type all-metal of LED chip compound substrate.

The technical scheme in the invention for solving the technical problem is: the compound substrate of the main heat dissipation channel eccentrically arranged type of a kind of flip-chip packaged all-metal, the copper base that it has the extremely affixed plate setting-in of P breach by an extremely affixed plate of the P for the affixed LED chip P utmost point and one side forms, the extremely affixed plate of its P for the affixed LED chip P utmost point is copper coin, is inlaid in the extremely affixed plate setting-in of the P breach of offering on copper base one side with high heat conductive insulating glue; Or cover copper ceramic wafer, weld and be inlaid in the extremely affixed plate setting-in of the P breach of offering on copper base one side with golden WU alloy.

The compound substrate of this flip-chip packaged provided by the utility model main heat dissipation channel eccentrically arranged type all-metal, when use with the P utmost point of the affixed LED chip of the extremely affixed plate of P, with the N utmost point of the affixed LED chip of copper base, because the copper base of the affixed LED chip N utmost point has outstanding heat-conductive characteristic and has again the composition surface that is connected the LED chip N utmost point that the chip cooling task size born with the LED chip N utmost point adapts, thereby the pyroconductivity of the LED chip of encapsulation heat radiation is close to the pyroconductivity of copper, effect is splendid, can fully meet the heat radiation requirement of high-power LED chip package and a large amount of intensive uses of LED chip.

Brief description of the drawings

Fig. 1 is the schematic diagram that adopts the great power LED formal dress chip cooling structure of aluminum substrate encapsulation;

Fig. 2 is the schematic diagram that adopts the high power LED flip-chip radiator structure of aluminum substrate encapsulation;

Fig. 3 is the schematic diagram that adopts the great power LED formal dress chip cooling structure of aluminum nitride ceramic substrate encapsulation;

Fig. 4 is the schematic diagram that adopts the high power LED flip-chip radiator structure of aluminum nitride ceramic substrate encapsulation;

Fig. 5 is the structural representation that adopts the compound substrate package high-power LED chip of flip-chip packaged provided by the utility model main heat dissipation channel eccentrically arranged type all-metal;

Mark in figure: 1---LED chip, 11---the N utmost point, 12---the P utmost point, 13---PN junction, 14---Sapphire Substrate, 21---Copper Foil, 22---dielectric, 23---substrate, 31---copper base, 32---the extremely affixed plate of P, 33---high heat conductive insulating glue or golden WU alloy.

Embodiment

With reference to accompanying drawing 5, the utility model provides the main heat dissipation channel eccentrically arranged type of a kind of flip-chip packaged all-metal compound substrate, and the copper base 31 that it has the extremely affixed plate setting-in of P breach by an extremely affixed plate 32 of the P for the affixed LED chip P utmost point and the right forms.

Embodiment 1, the compound substrate of the main heat dissipation channel eccentrically arranged type of above-mentioned flip-chip packaged all-metal, the extremely affixed plate 32 of its P for the affixed LED chip P utmost point is copper coins, pastes and is inlaid in the extremely affixed plate setting-in of the P breach of offering on copper base 31 the right with ST0903 heat conduction bonded adhesives (high heat conductive insulating glue).

Embodiment 2, the compound substrate of the main heat dissipation channel eccentrically arranged type of above-mentioned flip-chip packaged all-metal, the extremely affixed plate 32 of its P for the affixed LED chip P utmost point is to cover copper alumina ceramic plate or cover copper al nitride ceramic board, welds and is inlaid in the extremely affixed plate setting-in of the P breach of offering on copper base 31 the right with golden WU alloy.

Claims

1. the compound substrate of the main heat dissipation channel eccentrically arranged type of flip-chip packaged all-metal, it is characterized in that: the copper base (31) that it has the extremely affixed plate setting-in of P breach by an extremely affixed plate of the P for the affixed LED chip P utmost point (32) and one side forms, its extremely affixed plate of P for the affixed LED chip P utmost point (32) is copper coin, is inlaid in the extremely affixed plate setting-in of the P breach of offering on copper base (31) one side with high heat conductive insulating glue; Or cover copper ceramic wafer, weld and be inlaid in the extremely affixed plate setting-in of the P breach of offering on copper base (31) one side with golden WU alloy.

2. the compound substrate of the main heat dissipation channel eccentrically arranged type of flip-chip packaged according to claim 1 all-metal, is characterized in that: its extremely affixed plate of P for the affixed LED chip P utmost point (32) is to cover copper alumina ceramic plate.

3. the compound substrate of the main heat dissipation channel eccentrically arranged type of flip-chip packaged according to claim 1 all-metal, is characterized in that: its extremely affixed plate of P for the affixed LED chip P utmost point (32) is to cover copper al nitride ceramic board.