CN203574623U - IGBT driving circuit - Google Patents
IGBT driving circuit Download PDFInfo
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- CN203574623U CN203574623U CN201320700849.0U CN201320700849U CN203574623U CN 203574623 U CN203574623 U CN 203574623U CN 201320700849 U CN201320700849 U CN 201320700849U CN 203574623 U CN203574623 U CN 203574623U
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- 239000003990 capacitor Substances 0.000 claims abstract description 14
- 230000000087 stabilizing effect Effects 0.000 claims description 12
- 238000005538 encapsulation Methods 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 10
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000007599 discharging Methods 0.000 description 1
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Abstract
The utility model belongs to the IGBT control field and provides an IGBT driving circuit. By adopting the IGBT driving circuit composed of a first resistor R1, a second resistor R2, a driving chip, a capacitor C, a first driving resistor R11, a second driving resistor R12, a fast recovery diode D, a zener diode ZD1 and a third resistor R3, when the IGBT is switched off, the fast recovery diode D blocks current flown by the parasitic capacitor of the IGBT, the second driving resistor R12 replaces a parallel resistor composed of the first driving resistor R11 and the second driving resistor R12 to serve as the gate driving resistor of the IGBT, thereby increasing gate driving equivalent resistance of the IGBT, reducing the voltage change rate between the collector and the emitter of the IGBT, and reducing the peak voltage generated when the IGBT is switched off so as to ensure that the IGBT is not likely to be damaged due to breakdown.
Description
Technical field
The utility model belongs to IGBT control field, relates in particular to a kind of IGBT drive circuit.
Background technology
IGBT(Isolated Gate Bipolar Transistor, insulated gate bipolar thyristor) as the new-type element of handle high voltages, large electric current, its application is more and more extensive.Whether IGBT can normally work is decided by the design of its drive circuit, the gate driver circuit of IGBT can affect the parameters such as on-state voltage drop, switching time, switching loss and the short circuit current ability to bear of IGBT, static characteristic and the dynamic characteristic of IGBT have been determined, so the appropriate design of IGBT drive circuit is vital.
Existing IGBT drive circuit is by driving chip cooperation parallel resistance output high level or the low level grid to IGBT, to control conducting or the shutoff of IGBT.The grid of IGBT when turn-on and turn-off drives resistance larger, the ON time of IGBT and turn-off time are longer, and current changing rate (dI/dt) during IGBT conducting is directly proportional to ON time, the collector electrode of IGBT and the voltage change ratio of emitter (being dV/dt) were inversely proportional to the turn-off time of IGBT, so, ON time is longer, and current changing rate during IGBT conducting is just larger; Turn-off time is longer, the collector electrode of IGBT and the voltage change ratio of the emitter voltage change ratio when turn-offing is just less, because there is stray inductance in collector electrode and the emitter of IGBT, therefore can when turn-offing, IGBT produce peak voltage (U=L × dV/dt), peak voltage is larger, and the breakdown risk of IGBT is also just larger.Therefore, for IGBT, above-mentioned current changing rate and voltage change ratio are all the smaller the better, to guarantee that IGBT is not damaged.
But, above-mentioned existing IGBT drive circuit is when controlling IGBT conducting, electric current can be by parallel resistance the parasitic capacitance of the grid to IGBT charge, and when controlling IGBT shutoff, electric current oppositely flows out the grid of IGBT from parasitic capacitance, and because grid drives the resistance of resistance, cannot change, so can make the turn-off time of IGBT cannot extend to reduce peak voltage when parasitic capacitance release current, can and then cause IGBT easily breakdown and damage.
Utility model content
The purpose of this utility model is to provide a kind of IGBT drive circuit, is intended to solve existing IGBT drive circuit and because changing grid, drives the resistance of resistance, and cause easily breakdown when turn-offing and the problem damaged of IGBT.
The utility model is achieved in that a kind of IGBT drive circuit, is connected with master controller and IGBT, and described IGBT drive circuit comprises:
The first resistance R 1, the second resistance R 2, driving chip, capacitor C, first drive resistance R 11, the second driving resistance R 12, fast recovery diode D, voltage stabilizing didoe ZD1 and the 3rd resistance R 3;
The first end of described the first resistance R 1 connects the input/output port of described master controller, the second end of described the first resistance R 1 and the first end of described the second resistance R 2 are connected to the first input pin of described driving chip altogether, the supply pin of described driving chip and the first end of described capacitor C are connected to DC power supply altogether, described first drives the first end and described second of resistance R 11 to drive the first end of resistance R 12 to be connected to altogether the first output pin of described driving chip, described first drives the second end of resistance R 11 to connect the anode of described fast recovery diode D, described second drives the second end of resistance R 12 and the negative electrode of described fast recovery diode D, the first end of the negative electrode of described voltage stabilizing didoe ZD1 and described the 3rd resistance R 3 is connected to the grid of described IGBT altogether, the second end of described the second resistance R 2, the grounding leg of described driving chip, the second end of described capacitor C, the second end of the anode of described voltage stabilizing didoe ZD1 and described the 3rd resistance R 3 is all connected to ground altogether with the emitter of described IGBT.
The utility model comprises the first resistance R 1 by employing, the second resistance R 2, drive chip, capacitor C, first drives resistance R 11, second drives resistance R 12, fast recovery diode D, the IGBT drive circuit of voltage stabilizing didoe ZD1 and the 3rd resistance R 3, the electric current being flowed out by the parasitic capacitance of fast recovery diode D blocking-up IGBT when IGBT turn-offs, and by the second driving resistance R 12, substituting first drives resistance R 11 and second to drive the parallel resistance that resistance R 12 forms to drive resistance as the grid of IGBT, thereby the grid that has increased IGBT drives equivalent resistance, reduced the voltage change ratio between collector electrode and the emitter of IGBT, and then reach the peak voltage producing while reducing IGBT shutoff to guarantee that IGBT is difficult for damaging because puncturing.
Accompanying drawing explanation
Fig. 1 is the structure chart of the IGBT drive circuit that provides of the utility model embodiment;
Fig. 2 is that the related IGBT of IGBT drive circuit that the utility model embodiment provides controls exemplary plot;
Fig. 3 is the related peak voltage comparison of wave shape figure of IGBT drive circuit that the utility model embodiment provides.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.
The utility model embodiment comprises the first resistance R 1 by employing, the second resistance R 2, drive chip, capacitor C, first drives resistance R 11, second drives resistance R 12, fast recovery diode D, the IGBT drive circuit of voltage stabilizing didoe ZD1 and the 3rd resistance R 3, the electric current being flowed out by the parasitic capacitance of fast recovery diode D blocking-up IGBT when IGBT turn-offs, and by the second driving resistance R 12, substituting first drives resistance R 11 and second to drive the parallel resistance that resistance R 12 forms to drive resistance as the grid of IGBT, thereby the grid that has increased IGBT drives equivalent resistance, reduced the voltage change ratio between collector electrode and the emitter of IGBT, and then reach the peak voltage producing while reducing IGBT shutoff to guarantee that IGBT is difficult for damaging because puncturing.
Fig. 1 shows the structure of the IGBT drive circuit that the utility model embodiment provides, and for convenience of explanation, only shows the part relevant to the utility model, and details are as follows:
The IGBT drive circuit 100 that the utility model embodiment provides is connected with master controller 200 and IGBT, and IGBT drive circuit 100 comprises that the first resistance R 1, the second resistance R 2, driving chip U1, capacitor C, first drive resistance R 11, the second driving resistance R 12, fast recovery diode D, voltage stabilizing didoe ZD1 and the 3rd resistance R 3.
The first end of the first resistance R 1 connects the input/output port of master controller 200, the second end of the first resistance R 1 and the first end of the second resistance R 2 are connected to the first input pin INA that drives chip U1 altogether, drive the supply pin VCC of chip U1 and the first end of capacitor C to be connected to altogether DC power supply (as+15V DC power supply), first drives the first end and second of resistance R 11 to drive the first end of resistance R 12 to be connected to altogether the first output pin OUTA that drives chip U1, first drives the second end of resistance R 11 to connect the anode of fast recovery diode D, second drives the second end of resistance R 12 and the negative electrode of fast recovery diode D, the first end of the negative electrode of voltage stabilizing didoe ZD1 and the 3rd resistance R 3 is connected to the grid G of IGBT altogether, the second end of the second resistance R 2, drive the grounding leg GND of chip U1, the second end of capacitor C, the second end of the anode of voltage stabilizing didoe ZD1 and the 3rd resistance R 3 is all connected to ground altogether with the emitter E of IGBT.
Wherein, master controller 200 drives chip U1 to IGBT output high level or low level to the first input pin INA input control signal that drives chip U1 to control; Drive the second input pin INB, the second output pin OUTB, the first empty pin NC1 and the equal sky of the second empty pin NC2 of chip U1 to connect.
Further, driving chip U1 can be specifically that model is the driver of IR4427.
Further, it can be specifically 0603 encapsulation Chip-R that the first driving resistance R 11 and second drives resistance R 12, and the span of resistance is [10 Ω, 100 Ω].
Further, the fast recovery diode D stamp-mounting-paper diode that specifically model is ISS181, is less than 100ns(nanosecond its reverse recovery time).
In the utility model embodiment, the switching frequency of IGBT can be 5KHz～20KHz by driving chip U1 to control.
Below in conjunction with Fig. 1,2 and operation principle above-mentioned IGBT drive circuit is described further:
When driving chip U1 to control IGBT conducting, the high level of current of its first output pin OUTB output divides two-way to flow to the first driving resistance R 11 and the second driving resistance R 12, one tunnel (Ion1) drives resistance R 11 and fast recovery diode D by first, another road (Ion2) second driving resistance R 12 of flowing through, flow to the grid G of IGBT to parasitic capacitance C after two-way electric current converges
gE(as shown in Figure 2) charging, as parasitic capacitance C
gEvoltage while reaching the threshold voltage that makes IGBT conducting, IGBT conducting, now, the grid of IGBT drives equivalent resistance Rgon=R11//R12, the ON time of IGBT is constant, and current changing rate (being dI/dt) is also constant, therefore do not affect the parameter relevant to IGBT conducting.
When driving chip U1 to control IGBT shutoff, parasitic capacitance C
gEthe electric current I off discharging divides two-way to flow to fast recovery diode D and the second driving resistance R 12, because fast recovery diode D can not block electric current by reverse-conducting, works as C
gEvoltage reach make IGBT turn-off threshold voltage time, IGBT turn-offs, now, the grid of IGBT drives equivalent resistance Rgoff=R12, due to R12>R11//R12, so Rgoff>Rgon, therefore the turn-off time of IGBT can lengthen with respect to ON time, the voltage change ratio (being dV/dt) between collector electrode C and the emitter E of IGBT can diminish, and then reduce the peak voltage (Wpeak as shown in Figure 3) that IGBT produces when turn-offing, thereby make IGBT not be subject to peak voltage, puncture and damage.
The utility model embodiment comprises the first resistance R 1 by employing, the second resistance R 2, drive chip, capacitor C, first drives resistance R 11, second drives resistance R 12, fast recovery diode D, the IGBT drive circuit of voltage stabilizing didoe ZD1 and the 3rd resistance R 3, the electric current being flowed out by the parasitic capacitance of fast recovery diode D blocking-up IGBT when IGBT turn-offs, and by the second driving resistance R 12, substituting first drives resistance R 11 and second to drive the parallel resistance that resistance R 12 forms to drive resistance as the grid of IGBT, thereby the grid that has increased IGBT drives equivalent resistance, reduced the voltage change ratio between collector electrode and the emitter of IGBT, and then reach the peak voltage producing while reducing IGBT shutoff to guarantee that IGBT is difficult for damaging because puncturing.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.
Claims (5)
1. an IGBT drive circuit, is connected with master controller and IGBT, it is characterized in that, described IGBT drive circuit comprises:
The first resistance R 1, the second resistance R 2, driving chip, capacitor C, first drive resistance R 11, the second driving resistance R 12, fast recovery diode D, voltage stabilizing didoe ZD1 and the 3rd resistance R 3;
The first end of described the first resistance R 1 connects the input/output port of described master controller, the second end of described the first resistance R 1 and the first end of described the second resistance R 2 are connected to the first input pin of described driving chip altogether, the supply pin of described driving chip and the first end of described capacitor C are connected to DC power supply altogether, described first drives the first end and described second of resistance R 11 to drive the first end of resistance R 12 to be connected to altogether the first output pin of described driving chip, described first drives the second end of resistance R 11 to connect the anode of described fast recovery diode D, described second drives the second end of resistance R 12 and the negative electrode of described fast recovery diode D, the first end of the negative electrode of described voltage stabilizing didoe ZD1 and described the 3rd resistance R 3 is connected to the grid of described IGBT altogether, the second end of described the second resistance R 2, the grounding leg of described driving chip, the second end of described capacitor C, the second end of the anode of described voltage stabilizing didoe ZD1 and described the 3rd resistance R 3 is all connected to ground altogether with the emitter of described IGBT.
2. IGBT drive circuit as claimed in claim 1, is characterized in that, described driving chip is that model is the driver of IR4427.
3. IGBT drive circuit as claimed in claim 1, is characterized in that, it is 0603 encapsulation Chip-Rs that described the first driving resistance R 11 and described second drives resistance R 12.
4. IGBT drive circuit as claimed in claim 3, is characterized in that, it is [10 Ω, 100 Ω] that described the first driving resistance R 11 and described second drives the span of the resistance of resistance R 12.
5. IGBT drive circuit as claimed in claim 1, is characterized in that, described fast recovery diode D is that model is the stamp-mounting-paper diode of ISS181.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320700849.0U CN203574623U (en) | 2013-11-07 | 2013-11-07 | IGBT driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320700849.0U CN203574623U (en) | 2013-11-07 | 2013-11-07 | IGBT driving circuit |
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| Publication Number | Publication Date |
|---|---|
| CN203574623U true CN203574623U (en) | 2014-04-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320700849.0U Expired - Lifetime CN203574623U (en) | 2013-11-07 | 2013-11-07 | IGBT driving circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104092449A (en) * | 2014-06-24 | 2014-10-08 | 珠海格力电器股份有限公司 | Grid electrode protection circuit of IGBT and induction cooker |
| CN105763186A (en) * | 2014-12-15 | 2016-07-13 | 台湾积体电路制造股份有限公司 | Failure protection circuit |
| CN109004620A (en) * | 2018-09-07 | 2018-12-14 | 奥克斯空调股份有限公司 | A kind of IGBT current foldback circuit and air conditioner |
| WO2023193561A1 (en) * | 2022-04-07 | 2023-10-12 | 安徽威灵汽车部件有限公司 | Parameter determining method and device for gate drive resistor of switching transistor, and circuit |
-
2013
- 2013-11-07 CN CN201320700849.0U patent/CN203574623U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104092449A (en) * | 2014-06-24 | 2014-10-08 | 珠海格力电器股份有限公司 | Grid electrode protection circuit of IGBT and induction cooker |
| CN104092449B (en) * | 2014-06-24 | 2017-05-31 | 珠海格力电器股份有限公司 | The gate protection circuit and electromagnetic oven of IGBT |
| CN105763186A (en) * | 2014-12-15 | 2016-07-13 | 台湾积体电路制造股份有限公司 | Failure protection circuit |
| CN105763186B (en) * | 2014-12-15 | 2018-10-12 | 台湾积体电路制造股份有限公司 | Fail-safe circuit |
| CN109004620A (en) * | 2018-09-07 | 2018-12-14 | 奥克斯空调股份有限公司 | A kind of IGBT current foldback circuit and air conditioner |
| WO2023193561A1 (en) * | 2022-04-07 | 2023-10-12 | 安徽威灵汽车部件有限公司 | Parameter determining method and device for gate drive resistor of switching transistor, and circuit |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140430 |
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| CX01 | Expiry of patent term |