CN203722596U - A high-frequency anti-interference MOS tube negative voltage driving circuit - Google Patents
A high-frequency anti-interference MOS tube negative voltage driving circuit Download PDFInfo
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- CN203722596U CN203722596U CN201420102475.7U CN201420102475U CN203722596U CN 203722596 U CN203722596 U CN 203722596U CN 201420102475 U CN201420102475 U CN 201420102475U CN 203722596 U CN203722596 U CN 203722596U
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Abstract
The utility model discloses a high-frequency anti-interference MOS tube negative voltage driving circuit comprising a voltage stabilizing circuit, a negative voltage circuit, a protecting circuit and an MOS tube Q. The voltage stabilizing circuit comprises a voltage stabilizing diode D1 and a current-limiting resistor R1. The negative voltage circuit comprises a diode D2, a voltage stabilizing tube D3, a triode T1, a capacitor C1 and a grid input resistor R2. The protecting circuit comprises a diode D4, a protecting resistor R3 and a filter capacitor C2. The driving circuit is simple in structure and low in cost, can generate negative voltage for rapidly turning off the MOS tube when a driving voltage ends and is suitable for occasions where requirements for high frequency and circuit interference immunity are high.
Description
Technical field
The utility model belongs to power electronics and drives applied technical field, relates in particular to the jamproof metal-oxide-semiconductor negative pressure of a kind of high frequency drive circuit, the occasion that this circuit is applicable to high frequency and circuit anti-interference is had relatively high expectations.
Background technology
Along with the development of power semiconductor device, power field effect transistor has become device the most frequently used in Switching Power Supply, due to advantages such as its switching speed is fast, driving power is little, easy parallel connections, be widely used in the occasion of high frequency, middle low power, especially providing in the low-voltage, high-current Switching Power Supply of energy for communication electronic equipments such as computer, switch, the webservers.
At present, the switching frequency that voltage source drives has exceeded 1MHz, but the too high meeting of switching frequency causes series of problems, the Main Bottleneck that wherein hinders the raising of voltage source driving switch frequency is exactly loss, the loss of gate-drive and the loss of switching device output capacitance of switching device turn-on and turn-off process, than traditional drive circuit, high frequency negative pressure drives in the process that can disconnect at switch and turn-offs fast metal-oxide-semiconductor with minus negative pressure, reduce the circuit loss of high frequency, improve the anti-interference of drive circuit, solve foregoing circuit problem.
Summary of the invention
The defect and the deficiency that exist for above-mentioned prior art, the purpose of this utility model is, the jamproof metal-oxide-semiconductor negative pressure of a kind of high frequency drive circuit is provided, circuit of the present utility model has been accelerated the switching speed of metal-oxide-semiconductor, improve the antijamming capability of drive circuit, effectively prevented misleading of switching device.
In order to realize above-mentioned task, the utility model adopts following technical solution:
The jamproof metal-oxide-semiconductor negative pressure of a kind of high frequency drive circuit, comprise voltage stabilizing circuit, negative pressure circuit, protective circuit and metal-oxide-semiconductor Q, described voltage stabilizing circuit is made up of voltage stabilizing didoe D1 and current-limiting resistance R1, the negative pole of described voltage stabilizing didoe D1 is connected with driving voltage Vg, and described current-limiting resistance R1 is connected on the two ends of D1 positive pole and described metal-oxide-semiconductor Q source electrode; Described negative pressure circuit is made up of diode D2, voltage-stabiliser tube D3, triode T1, capacitor C 1 and grid input resistance R2, the positive pole of described diode D2 is connected with driving voltage Vg, the negative pole of diode D2 is connected with the negative pole of described voltage-stabiliser tube D3 with the positive pole of described capacitor C 1 simultaneously, the positive pole of described voltage-stabiliser tube D3 is connected with the negative pole of capacitor C 1, the base stage of described positive-negative-positive triode T1 is connected with the positive pole of diode D2, the collector electrode of triode T1 is connected with the positive pole of capacitor C 1, and the emitter of triode T1 is connected with the source electrode of described metal-oxide-semiconductor Q; Described grid input resistance R2 is connected on the two ends of capacitor C 1 negative pole and metal-oxide-semiconductor Q grid; Described protective circuit is made up of diode D4, protective resistance R3 and filter capacitor C2; the positive pole of described diode D4 is connected with the grid of metal-oxide-semiconductor Q; the negative pole of diode D4 is connected with the positive pole of capacitor C 1; described protective resistance R3 is connected between the grid and gate pole of metal-oxide-semiconductor Q, and described filter capacitor C2 is in parallel with resistance R 3.
The beneficial effects of the utility model are: the voltage stabilizing circuit being directly connected with driving voltage, in the time that driving voltage is positive voltage, positive voltage is shaken to spike and is limited in the magnitude of voltage at voltage stabilizing circuit two ends, it is 1 o'clock at driving voltage, voltage of voltage regulation road is that capacitor C 1 is charged by conducting, and current-limiting resistance R1 is used for preventing that circuital current is excessive; In the time that driving voltage is zero, negative voltage generating circuit produces negative voltage between the gate pole of metal-oxide-semiconductor Q and grid, diode D2 can prevent reverse direction current flow, capacitor C 1 is utilized charge pump principle to sport at cathode voltage at 1 o'clock and is produced negative pressure, parallel voltage-stabilizing diode D3 ensures that electric capacity both end voltage is stable, positive-negative-positive triode T1 is used for providing passage for producing negative pressure, and resistance R 2 ensures the discharge time of charge pump; Resistance R 3 in protective circuit is connected between the grid and source electrode of metal-oxide-semiconductor; prevent electrostatic breakdown; little capacitor C 2 strobes; reduce the distortion phenomenon on edge, driving pulse front and back; the effect of diode D4 is to provide Low ESR discharge channel to the parasitic input capacitance of metal-oxide-semiconductor grid; the electric discharge of acceleration input capacitance, thus accelerate the shutoff of metal-oxide-semiconductor.
This driving circuit structure is simple, with low cost, can in the time that driving voltage finishes, produce negative pressure and turn-off fast metal-oxide-semiconductor, is applicable to high frequency and and the circuit anti-interference occasion of having relatively high expectations.
Brief description of the drawings
Below in conjunction with the drawings and specific embodiments the utility model is further explained explanation.
Fig. 1 is circuit theory diagrams;
Fig. 2 is driving voltage waveform;
Fig. 3 is the voltage waveform between gate pole and grid.
In Fig. 1, Q is metal-oxide-semiconductor, and C1 is that electric capacity, D1, D2, D3, D4 are diode, and R1, R2, R3 are resistance, and T1 is triode.
In Fig. 2, Fig. 3, D is duty ratio, and T is switch periods, and DT is ON time, and (1-D) T is the turn-off time, and Vg is driving voltage waveform, the voltage between grid and source electrode that Vgs is power MOS pipe.
Embodiment
In Fig. 1, the positive pole of counnter attack diode D2 is connected with driving voltage Vg, the negative pole of diode D2 is connected with the negative pole of described voltage-stabiliser tube D3 with the positive pole of described capacitor C 1 simultaneously, the positive pole of voltage-stabiliser tube D3 is connected with the negative pole of capacitor C 1, the base stage of positive-negative-positive triode T1 is connected with the positive pole of diode D2, the collector electrode of triode T1 is connected with the positive pole of capacitor C 1, and the emitter of triode T1 is connected with the source electrode of described metal-oxide-semiconductor Q; Grid input resistance R2 is connected on the two ends of capacitor C 1 negative pole and metal-oxide-semiconductor Q grid; The positive pole of diode D4 is connected with the grid of metal-oxide-semiconductor Q, and the negative pole of diode D4 is connected with the positive pole of capacitor C 1, and protective resistance R3 is connected between the grid and gate pole of metal-oxide-semiconductor Q, and described filter capacitor C2 is in parallel with resistance R 3.
Fig. 2, Fig. 3 are two main waveforms in drive circuit, and establishing and driving the duty ratio of signal is D, and switch periods is T.In Fig. 2, in DT ON time, while driving signal to be continuously 5V, the voltage Vgs in Fig. 3 between metal-oxide-semiconductor grid and source electrode is higher than threshold voltage, and the metal-oxide-semiconductor of armature winding is open-minded.Within (1-D) T turn-off time, drive signal when 5V becomes 0V, the voltage Vgs between metal-oxide-semiconductor grid and source electrode becomes negative value, has realized the high frequency negative pressure of metal-oxide-semiconductor and has turn-offed, and has reduced the loss of drive circuit, has improved the anti-interference of circuit.
Claims (2)
1. the jamproof metal-oxide-semiconductor negative pressure of a high frequency drive circuit, it is characterized in that, comprise voltage stabilizing circuit, negative pressure circuit, protective circuit and metal-oxide-semiconductor Q, described voltage stabilizing circuit is made up of voltage stabilizing didoe D1 and current-limiting resistance R1, the negative pole of described voltage stabilizing didoe D1 is connected with driving voltage Vg, and described current-limiting resistance R1 is connected on the two ends of D1 positive pole and described metal-oxide-semiconductor Q source electrode; Described negative pressure circuit is made up of diode D2, voltage-stabiliser tube D3, triode T1, capacitor C 1 and grid input resistance R2, the positive pole of described diode D2 is connected with driving voltage Vg, the negative pole of diode D2 is connected with the negative pole of described voltage-stabiliser tube D3 with the positive pole of described capacitor C 1 simultaneously, the positive pole of described voltage-stabiliser tube D3 is connected with the negative pole of capacitor C 1, the base stage of described positive-negative-positive triode T1 is connected with the positive pole of diode D2, the collector electrode of triode T1 is connected with the positive pole of capacitor C 1, and the emitter of triode T1 is connected with the source electrode of described metal-oxide-semiconductor Q; Described grid input resistance R2 is connected on the two ends of capacitor C 1 negative pole and metal-oxide-semiconductor Q grid.
2. the jamproof metal-oxide-semiconductor negative pressure of a kind of high frequency as claimed in claim 1 drive circuit; it is characterized in that; described protective circuit is made up of diode D4, protective resistance R3 and filter capacitor C2; the positive pole of described diode D4 is connected with the grid of metal-oxide-semiconductor Q; the negative pole of diode D4 is connected with the positive pole of capacitor C 1; described protective resistance R3 is connected between the grid and gate pole of metal-oxide-semiconductor Q, and described filter capacitor C2 is in parallel with resistance R 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420102475.7U CN203722596U (en) | 2014-03-07 | 2014-03-07 | A high-frequency anti-interference MOS tube negative voltage driving circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420102475.7U CN203722596U (en) | 2014-03-07 | 2014-03-07 | A high-frequency anti-interference MOS tube negative voltage driving circuit |
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| CN203722596U true CN203722596U (en) | 2014-07-16 |
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| CN201420102475.7U Expired - Fee Related CN203722596U (en) | 2014-03-07 | 2014-03-07 | A high-frequency anti-interference MOS tube negative voltage driving circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107276564A (en) * | 2017-06-07 | 2017-10-20 | 北京新能源汽车股份有限公司 | A kind of drive circuit and automobile |
| CN108667444A (en) * | 2018-07-26 | 2018-10-16 | 深圳市蓝德汽车电源技术有限公司 | A kind of silicon carbide MOSFET driving circuit |
| CN111130321A (en) * | 2019-12-31 | 2020-05-08 | 上海辛格林纳新时达电机有限公司 | Single-power-supply negative-voltage power switch tube driving circuit |
| CN112769103A (en) * | 2020-12-29 | 2021-05-07 | 上海稊米汽车科技有限公司 | Transient supporting protection system for super capacitor |
-
2014
- 2014-03-07 CN CN201420102475.7U patent/CN203722596U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107276564A (en) * | 2017-06-07 | 2017-10-20 | 北京新能源汽车股份有限公司 | A kind of drive circuit and automobile |
| CN108667444A (en) * | 2018-07-26 | 2018-10-16 | 深圳市蓝德汽车电源技术有限公司 | A kind of silicon carbide MOSFET driving circuit |
| CN111130321A (en) * | 2019-12-31 | 2020-05-08 | 上海辛格林纳新时达电机有限公司 | Single-power-supply negative-voltage power switch tube driving circuit |
| CN112769103A (en) * | 2020-12-29 | 2021-05-07 | 上海稊米汽车科技有限公司 | Transient supporting protection system for super capacitor |
| CN112769103B (en) * | 2020-12-29 | 2022-06-28 | 上海稊米汽车科技有限公司 | Transient supporting protection system for super capacitor |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140716 Termination date: 20190307 |
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| CF01 | Termination of patent right due to non-payment of annual fee |