CN104092449A - IGBT grid protection circuit and induction cooker - Google Patents
IGBT grid protection circuit and induction cooker Download PDFInfo
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Abstract
The invention provides a gate protection circuit of an IGBT (insulated gate bipolar transistor), which comprises a first resistor R1, a second resistor R2, a first capacitor C1, a second capacitor C2 and a voltage stabilizing diode Z, wherein the first resistor R1 is connected with the first capacitor C2; the first resistor R1 and the second resistor R2 are connected in series to form a first branch circuit, the first capacitor C1 and the second capacitor C2 are connected in series to form a second branch circuit, and the first branch circuit and the second branch circuit are connected in parallel to form a first path; the common ends of the first capacitor C1 and the second capacitor C2 are connected with the common ends of the first resistor R1 and the second resistor R2; the cathode of the voltage stabilizing diode Z is connected to one end of the first path, the anode of the voltage stabilizing diode Z is connected to the cathode of a driving signal of a driving circuit of the IGBT, and the voltage stabilizing diode Z is used for accelerating the turn-off speed of the IGBT. The invention also relates to an induction cooker. According to the gate protection circuit of the IGBT and the induction cooker, the IGBT is rapidly switched on and off, the anti-interference capability of the gate protection circuit of the IGBT is enhanced, and the energy efficiency of the induction cooker is improved.
Description
Technical field
The present invention relates to electromagentic furnace technology field, particularly relate to gate protection circuit and the electromagnetic oven of a kind of IGBT.
Background technology
General IGBT (Insulated Gate Bipolar Transistor for electromagnetic oven; insulated gate bipolar transistor) gate protection circuit, only adopt the combination of voltage stabilizing didoe or voltage stabilizing didoe and a triode as the gate protection circuit of IGBT.As shown in Figure 1, the only gate protection circuit as IGBT with the resistance on a grid that is connected on IGBT of this circuit.But such scheme exists the switching speed of IGBT fast not, protective circuit itself does not possess jamproof function, fragile, thus the efficiency that causes electromagnetic oven compared with low, caloric value large, easily aircraft bombing etc.
Summary of the invention
In view of the present situation of prior art; the object of the present invention is to provide gate protection circuit and the electromagnetic oven of a kind of IGBT; fast conducting and the shutoff of IGBT are realized; effectively strengthen the antijamming capability of protective circuit itself; thereby improve the efficiency of electromagnetic oven, prevented that the IGBT of electromagnetic oven from damaging.
For achieving the above object, the present invention adopts following technical scheme:
A gate protection circuit of IGBT, is connected between the drive circuit of IGBT and the grid of IGBT, the drive circuit of described IGBT for generation of drive signal,
Comprise the first resistance R 1, the second resistance R 2, the first capacitor C 1, the second capacitor C 2 and voltage stabilizing didoe Z;
Described the first resistance R 1 and described the second resistance R 2 series connection form the first branch road, and described the first capacitor C 1 and described the second capacitor C 2 series connection form the second branch road, after described the first branch road and described the second branch circuit parallel connection, form the first path; Described the first capacitor C 1 is connected the corresponding common port of described the first resistance R 1 and described the second resistance R 2 with the corresponding common port of described the second capacitor C 2;
The negative electrode of described voltage stabilizing didoe Z is connected to one end of described the first path, the negative pole of the driving signal of the drive circuit of IGBT described in the anodic bonding of described voltage stabilizing didoe Z, and described voltage stabilizing didoe Z is for accelerating the turn-off speed of described IGBT.
Therein in an embodiment, the resistance of described the first resistance R 1 and described the second resistance R 2 equates, and Standard resistance range is 5 Ω～20 Ω, and the capacity of described the first capacitor C 1 and described the second capacitor C 2 equates, and range of capacity is 1 microfarad～20 microfarad.
Therein in an embodiment, the resistance of described the first resistance R 1 and described the second resistance R 2 equates, and Standard resistance range is 8 Ω～10 Ω, and the capacity of described the first capacitor C 1 and described the second capacitor C 2 equates, and range of capacity is 1 microfarad～2 microfarad.
In an embodiment, described voltage stabilizing didoe Z is high frequency voltage stabilizing didoe therein.
In an embodiment, the burning voltage of described voltage stabilizing didoe Z is than the high 1V～3V of grid driven saturated voltage of described IGBT therein.
In an embodiment, also comprise the first diode D therein, described the first diode D is connected in parallel on the two ends of described the first path as alternate path, for accelerating the turn-off speed of described IGBT;
The negative electrode of described the first diode D connects the input of described the first path, the output of the first path described in the anodic bonding of described the first diode D.
In an embodiment, described the first diode D is high-frequency rectification diode therein.
In an embodiment, also comprise the second diode D1 and the 3rd resistance R 3 therein; The anodic bonding of described the second diode D1 is to one end of described the first path, and the negative electrode of described the second diode D1 is connected and is connected to the negative pole of the driving signal of the drive circuit of described IGBT after described the 3rd resistance R 3, forms three-way.
In an embodiment, described the second diode D1 is low frequency rectifier diode therein.
In an embodiment, described the 3rd resistance R 3 is perceptual resistance therein, and the Standard resistance range of described the 3rd resistance R 3 is 5 Ω～5000 Ω.
In an embodiment, described the 3rd resistance R 3 is cement resistor therein, and the value of described the 3rd resistance R 3 is 100 Ω.
In an embodiment, the anodic bonding of described the second diode D1 is to the input of described the first path therein, and the negative electrode of described voltage stabilizing didoe Z is connected to the output of described the first path.
In an embodiment, the anodic bonding of described the second diode D1 is to the output of described the first path therein, and the negative electrode of described voltage stabilizing didoe Z is connected to the output of described the first path.
In an embodiment, the anodic bonding of described the second diode D1 is to the input of described the first path therein, and the negative electrode of described voltage stabilizing didoe Z is connected to the input of described the first path.
The invention still further relates to a kind of electromagnetic oven, comprise the gate protection circuit of the IGBT described in above-mentioned any one.
The invention has the beneficial effects as follows:
The gate protection circuit of IGBT of the present invention and electromagnetic oven, because the first electric capacity and the second electric capacity only have the impedance of several ohm to high-frequency alternating current, make high-frequency alternating current fast by the grid of IGBT, to have accelerated the conducting speed of IGBT; The first resistance and the series connection of the second resistance arrange, and have prevented null offset, have increased galvanic inhibition; reduce the impact of the conducting speed of direct current on IGBT; meanwhile, interference signal that can filtering upper frequency, has improved the antijamming capability of the gate protection circuit of this IGBT.Voltage stabilizing didoe Z can lead away the trailing edge voltage of the driving signal of the rising edge voltage of segment drive signal and the grid remnants of IGBT, reduces the time of the trailing edge that drives signal, accelerates the turn-off speed of IGBT.By by the first path by being connected on the grid of IGBT, realized fast conducting and the shutoff of IGBT, improved the efficiency of electromagnetic oven, prevented that the electromagnetic oven that the ON time process of IGBT causes from damaging.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of the gate protection circuit of general IGBT;
Fig. 2 is the circuit theory diagrams of the gate protection circuit embodiment mono-of IGBT of the present invention;
Fig. 3 is the circuit theory diagrams of the gate protection circuit embodiment bis-of IGBT of the present invention;
Fig. 4 is the circuit theory diagrams of the gate protection circuit embodiment tri-of IGBT of the present invention.
Embodiment
In order to make technical scheme of the present invention clearer, below in conjunction with accompanying drawing, gate protection circuit and electromagnetic oven to IGBT of the present invention are described in further detail.Should be appreciated that specific embodiment described herein is only in order to explain that the present invention is not intended to limit the present invention.
Referring to Fig. 2 to Fig. 4, the gate protection circuit of IGBT of the present invention is connected between the drive circuit of IGBT and the grid of IGBT, and the drive circuit of IGBT is for generation of driving signal.IGBT is voltage turn-on type device, in the time that the voltage between grid-emitter of IGBT is greater than zero, and IGBT conducting, in the time that the voltage between grid-emitter of IGBT is less than zero, IGBT turn-offs.Owing to there being larger parasitic capacitance Cge between the grid of IGBT and emitter, drive rising edge and the trailing edge of signal to provide larger charging current and discharging current for parasitic capacitance Cge, could meet the requirement that IGBT turns on and off, therefore IGBT needs large driven current density.In the present embodiment, the drive circuit of IGBT adopts the LC oscillation circuit forming after inductance and Capacitance parallel connection to produce and drives signal, this driving signal high-frequency current that forming frequency is 30KHz after triode amplifies.
The gate protection circuit of IGBT of the present invention comprises the first resistance R 1, the second resistance R 2, the first capacitor C 1, the second capacitor C 2 and voltage stabilizing didoe Z.Wherein, the first resistance R 1 and the second resistance R 2 series connection form the first branch road, have prevented the phenomenon of null offset.General IGBT protective circuit can be at the resistance of 10 Ω of grid series connection of IGBT, to prevent null offset and to prevent from disturbing.In the present embodiment, adopt the resistance of two series connection, increased galvanic inhibition, reduced the impact of direct current on IGBT turn-on and turn-off speed.
The first capacitor C 1 is connected with the first capacitor C 2 and is formed the second branch road.After the first capacitor C 1 and the second capacitor C 2 series connection, high-frequency alternating current is only had to the resistance value of several ohm, make like this high-frequency alternating current fast by the grid of IGBT, to accelerate the conducting speed of IGBT.The first branch road and the second branch circuit parallel connection form the first path 1; and the first resistance R 1 is connected the corresponding common port of the first capacitor C 1 and the second capacitor C 2 with the corresponding common port of the second resistance R 2; by the combination of resistance and electric capacity; can filtering drive alternating current and the higher interference signal of frequency of too high voltages in signal, strengthened the antijamming capability of the gate protection circuit of this IGBT.As, the gate protection circuit of this IGBT can hinder and lead away the current signal of 50KHz, prevents that too high voltage and interference signal are by the grid of IGBT.Meanwhile, capacitor C 1 and capacitor C 2 can prevent the overtension of the grid that is added in IGBT, drive the rising time of signal long while preventing IGBT conducting.
The negative electrode of voltage stabilizing didoe Z is connected to one end of the first path, and the anodic bonding of voltage stabilizing didoe Z is at the negative pole of the driving signal of the drive circuit of IGBT.Voltage stabilizing didoe Z is used for the trailing edge voltage of the driving signal of leading away the rising edge voltage of segment drive signal and the grid remnants of IGBT, accelerates the shutoff of IGBT.
Because the first electric capacity and the second electric capacity only have the impedance of several ohm to high-frequency alternating current, make high-frequency alternating current fast by the grid of IGBT, to have accelerated the conducting speed of IGBT; The first resistance and the series connection of the second resistance arrange, and have prevented null offset, have increased galvanic inhibition; reduce the impact of the conducting speed of direct current on IGBT; meanwhile, interference signal that can filtering upper frequency, has improved the antijamming capability of the gate protection circuit of this IGBT.Voltage stabilizing didoe Z can lead away the trailing edge voltage of the driving signal of the rising edge voltage of segment drive signal and the grid remnants of IGBT, reduces the time of the trailing edge that drives signal, accelerates the turn-off speed of IGBT.By by the first path by being connected on the grid of IGBT, realized fast conducting and the shutoff of IGBT, improved the efficiency of electromagnetic oven, prevented that the electromagnetic oven that the ON time process of IGBT causes from damaging.
More preferably, the resistance of the first resistance R 1 and the second resistance R 2 equates, and Standard resistance range is 5 Ω～20 Ω.Preferably, the resistance of the first resistance R 1 and the second resistance R 2 equates, and Standard resistance range is 8 Ω～10 Ω.In the present embodiment, the first resistance R 1 and the second resistance R 2 are all selected without perceptual metal film precision resistance, and the resistance of the first resistance R 1 and the second resistance R 2 is 10 Ω.Like this, the gate protection circuit of this IGBT can the general IGBT protective circuit of force rate increase one times to galvanic obstruction, has reduced the impact of the turn-on and turn-off speed of direct current on IGBT.
More preferably, the capacity of the first capacitor C 1 and the second capacitor C 2 equates, and range of capacity is 1 microfarad～20 microfarad.Preferably, the capacity of the first capacitor C 1 and the second capacitor C 2 equates, and range of capacity is 1 microfarad～2 microfarad.In the present embodiment, the first capacitor C 1 and the second capacitor C 2 all adopt small-sized polarity free capacitor, and the capacity of the first capacitor C 1 and the second capacitor C 2 is 1 microfarad.
Can draw 1/RC=2 π f>f=30KHz by RC charge-discharge principle and formula f=1/2 π RC; By principle and the formula C=C1C2/ (C1+C2) of series capacitance, the capacitor value X of electric capacity after series connection
c=1/2 π fC<20 Ω; Principle and formula by resistance-capacitance circuit can obtain, the electric current formed impedance Z <10 Ω of 30KHz.Due to the reduction of the grid impedance of IGBT, weaken the Miller effect of the parasitic capacitance Cge between grid-emitter like this, accelerated the speed of IGBT conducting, shortened the time of rising edge.
More preferably, voltage stabilizing didoe Z is high frequency voltage stabilizing didoe, and conducting rank is 0.01 millisecond～0.00001 millisecond.Due to the existence of parasitic capacitance Cge between grid-emitter, in the time that the voltage of grid can not get discharging as soon as possible, IGBT is in exporting galvanic saturation condition, and the inductance coil in the drive circuit of IGBT is short circuit to direct current.Like this, the voltage of the 300V of rectifier bridge output is applied directly to the grid of IGBT, will burn rapidly IGBT and rectifier bridge.The saturation condition that it should be understood that the grid of IGBT continues just IGBT and rectifier bridge to be burnt less than 1 second conventionally, and the grid saturation condition of IGBT continues conventionally can not burn IGBT and rectifier bridge in 0.01 second.Therefore, voltage stabilizing didoe employing conducting rank is the high frequency voltage stabilizing didoe of 0.01 millisecond～0.00001 millisecond, can discharge timely the voltage of the grid of IGBT, ensures that IGBT and rectifier bridge are not burned, and ensure the fail safe of circuit.
More preferably, the burning voltage of voltage stabilizing didoe Z is than the high 1V～3V of driven saturated magnitude of voltage of the grid of IGBT.Because the driven saturated magnitude of voltage of the grid of IGBT is generally 15V～18V, if the driven saturated overtension of grid easily causes gate breakdown, damage IGBT.Therefore,, in the time that the driven saturated magnitude of voltage of the grid of IGBT is 15V, can select burning voltage is the voltage stabilizing didoe of 16V; In the time that the driven saturated voltage of the grid of IGBT is 18V, can select burning voltage is the voltage stabilizing didoe of 20V.
As a kind of embodiment, also comprise the first diode D, the first diode D is connected in parallel on the two ends of the first path 1 as alternate path 2, for accelerating the turn-off speed of IGBT.In the present embodiment, the negative electrode of the first diode D connects the input of the first path 1, the output of anodic bonding the first path 1 of the first diode D.
It should be understood that between the positive pole of driving signal and the grid of IGBT of drive circuit of the first path 1 series IGBT.One end that the first path 1 is connected with the positive pole of the driving signal of the drive circuit of IGBT is as the input of the first path 1, and one end that the first path is connected with the grid of IGBT is as the output of the first path 1.
More preferably, this first diode D is high-frequency rectification diode, and reverse recovery time is short, if adopt low frequency rectifier diode, will lose the shortening trailing edge time, lose the effect of guaranteeing no-voltage.Due to the effect of voltage stabilizing didoe Z, make the magnitude of voltage of output of the first path 1 higher than the magnitude of voltage of the first path 1 input, there is voltage difference in the two ends of such the first diode D, makes the first diode D conducting.Clamper after the first diode current flow, is bypassed the first path substantially, and the impedance of the grid of IGBT is the conduction impedance of the first diode.Because the impedance of the grid of IGBT reduces, the charging current that flows into parasitic capacitance Cge increases, and has accelerated the speed that IGBT turn-offs, and has shortened the time of trailing edge.
In the present embodiment, because voltage stabilizing didoe Z has a very little electric capacity and a very short reaction time, and this very little electric capacity is very little on the impact of large pulse current.But the reaction time of this voltage stabilizing didoe Z should be slightly larger than the time of the rising edge that drives signal.Like this, before the grid of IGBT reaches capacity driving voltage value, voltage stabilizing didoe Z conducting.After voltage stabilizing didoe Z conducting, the first diode D starts effect, and meanwhile, voltage stabilizing didoe Z can lead away the trailing edge residual voltage of part rising edge voltage and the grid of driving signal, has accelerated the shutoff of IGBT, has shortened the time of trailing edge.
As a kind of embodiment, also comprise the second diode D1 and the 3rd resistance R 3.Wherein, one end of anodic bonding to the first path 1 of the second diode D1, is connected to the negative pole of the driving signal of the drive circuit of IGBT after the negative electrode series resistance R3 of the second diode D1, form three-way 3.Like this, drive low frequency ac and direct current in signal to be led away by three-way 3, make low frequency ac and direct current not by the grid of IGBT, reduced the impact of low frequency ac and the direct current turn-on and turn-off on IGBT, realized the shunting of low-and high-frequency.
More preferably, this second diode D1 is low frequency rectifier diode, can select the rectifier diode of IN4007 series.The 3rd resistance R 3 is perceptual resistance, is preferably cement resistor.The Standard resistance range of the 3rd resistance R 3 is 5 Ω～5000 Ω, is preferably 100 Ω.Certainly, the resistance of the 3rd resistance R 3 can also be selected other suitable resistances according to development environment.Meanwhile, three-way 3 has also been protected voltage stabilizing didoe Z, otherwise, once there is the situation that the direct currents such as null offset, low-frequency ac voltage, current duration are grown, can burn voltage stabilizing didoe Z.
Embodiment mono-
As shown in Figure 2, the first path is connected between the positive pole of driving signal and the grid of IGBT of drive circuit of IGBT, the first diode D is connected in parallel on the two ends of the first path as alternate path, the input of anodic bonding to the first path of the second diode D1, the anodic bonding of the second diode D1, to the positive pole of the driving signal of the drive circuit of IGBT, is connected to the negative pole of the driving signal of the drive circuit of IGBT after negative electrode series connection the 3rd resistance R 3 of the second diode D1.The negative electrode of voltage stabilizing didoe Z is connected to the output of the first path 1, and the anodic bonding of voltage stabilizing didoe is to the negative pole of the driving signal of the drive circuit of IGBT., three-way and voltage stabilizing didoe Z are separately positioned on the two ends of the first path.Due to, voltage stabilizing didoe Z is connected to the output of the first path, after the first resistance R 1 and the second resistance R 2 series connection, meets voltage stabilizing didoe Z again, and therefore voltage stabilizing didoe Z does not need series limiting resistor again.
Embodiment bis-
As shown in Figure 3, the first path is connected between the positive pole of driving signal and the grid of IGBT of drive circuit of IGBT, the first diode D is connected in parallel on the two ends of the first path as alternate path, the output of anodic bonding to the first path of the second diode D1, the anodic bonding of the second diode D1, to the grid of IGBT, is connected to the negative pole of the driving signal of the drive circuit of IGBT after negative electrode series connection the 3rd resistance R 3 of the second diode D1.The negative electrode of voltage stabilizing didoe Z is connected to the output of the first path 1, and the negative electrode of voltage stabilizing didoe Z is connected to the grid of IGBT, and the anodic bonding of voltage stabilizing didoe Z is to the negative pole of the driving signal of the drive circuit of IGBT., three-way and voltage stabilizing didoe Z are arranged on the output of the first path in parallel.Due to, voltage stabilizing didoe Z is connected to the output of the first path, after two resistance R series connection, connects voltage stabilizing didoe again, and therefore voltage stabilizing didoe Z does not need series limiting resistor again.
Embodiment tri-
As shown in Figure 4, the first path is connected between the positive pole of driving signal and the grid of IGBT of drive circuit of IGBT, the first diode D is connected in parallel on the two ends of the first path as alternate path, the input of anodic bonding to the first path of the second diode D1, the anodic bonding of the second diode D1, to the positive pole of the driving signal of the drive circuit of IGBT, is connected to the negative pole of the driving signal of the drive circuit of IGBT after negative electrode series connection the 3rd resistance R 3 of the second diode D1.The negative electrode of voltage stabilizing didoe Z is connected to the input of the first path 1, and the negative electrode of voltage stabilizing didoe Z is connected to the positive pole of the driving signal of the drive circuit of IGBT, and the anodic bonding of voltage stabilizing didoe is to the negative pole of the driving signal of the drive circuit of IGBT.The i.e. input that is arranged on the first path of three-way and voltage stabilizing didoe Z parallel connection.In the present embodiment, voltage stabilizing didoe Z directly connects the positive pole of the driving signal of the drive circuit of IGBT, and inductance or the resistance of the high inductance of low resistance of can connecting on voltage stabilizing didoe, as cement resistor.Like this, can ensure that voltage stabilizing didoe is not damaged.
The invention still further relates to a kind of electromagnetic oven, comprise the gate protection circuit of the IGBT in above-mentioned arbitrary embodiment, owing to having realized fast conducting and the shutoff of IGBT, prevented the damage of IGBT, reduced the temperature rise of the each components and parts of electromagnetic oven.In the present embodiment, can be by increasing the capacity of the first capacitor C 1 and the second capacitor C 2, the resistance that simultaneously increases the 3rd resistance R 3 realizes the lifting of this electromagnetic oven power, and then improves the efficiency of electromagnetic oven.
The gate protection circuit of IGBT of the present invention and electromagnetic oven, because the first electric capacity and the second electric capacity only have the impedance of several ohm to high-frequency alternating current, make high-frequency alternating current fast by the grid of IGBT, to have accelerated the conducting speed of IGBT; The first resistance and the series connection of the second resistance arrange, and have prevented null offset, have increased galvanic inhibition; reduce the impact of the conducting speed of direct current on IGBT; meanwhile, interference signal that can filtering upper frequency, has improved the antijamming capability of the gate protection circuit of this IGBT.Voltage stabilizing didoe Z can lead away the trailing edge voltage of the driving signal of the rising edge voltage of segment drive signal and the grid remnants of IGBT, reduces the time of the trailing edge that drives signal, accelerates the turn-off speed of IGBT.By by the first path by being connected on the grid of IGBT, realized fast conducting and the shutoff of IGBT, improved the efficiency of electromagnetic oven, prevented that the electromagnetic oven that the ON time process of IGBT causes from damaging.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (15)
1. a gate protection circuit of IGBT, is connected between the drive circuit of IGBT and the grid of IGBT, and the drive circuit of described IGBT, for generation of driving signal, is characterized in that:
Comprise the first resistance R 1, the second resistance R 2, the first capacitor C 1, the second capacitor C 2 and voltage stabilizing didoe Z;
Described the first resistance R 1 and described the second resistance R 2 series connection form the first branch road, and described the first capacitor C 1 and described the second capacitor C 2 series connection form the second branch road, after described the first branch road and described the second branch circuit parallel connection, form the first path; Described the first capacitor C 1 is connected the corresponding common port of described the first resistance R 1 and described the second resistance R 2 with the corresponding common port of described the second capacitor C 2;
The negative electrode of described voltage stabilizing didoe Z is connected to one end of described the first path, the negative pole of the driving signal of the drive circuit of IGBT described in the anodic bonding of described voltage stabilizing didoe Z, and described voltage stabilizing didoe Z is for accelerating the turn-off speed of described IGBT.
2. the gate protection circuit of IGBT according to claim 1, is characterized in that:
The resistance of described the first resistance R 1 and described the second resistance R 2 equates, and Standard resistance range is 5 Ω～20 Ω, and the capacity of described the first capacitor C 1 and described the second capacitor C 2 equates, and range of capacity is 1 microfarad～20 microfarad.
3. the gate protection circuit of IGBT according to claim 1, is characterized in that:
The resistance of described the first resistance R 1 and described the second resistance R 2 equates, and Standard resistance range is 8 Ω～10 Ω, and the capacity of described the first capacitor C 1 and described the second capacitor C 2 equates, and range of capacity is 1 microfarad～2 microfarad.
4. the gate protection circuit of IGBT according to claim 1, is characterized in that:
Described voltage stabilizing didoe Z is high frequency voltage stabilizing didoe.
5. the gate protection circuit of IGBT according to claim 1, is characterized in that:
The burning voltage of described voltage stabilizing didoe Z is than the high 1V～3V of grid driven saturated voltage of described IGBT.
6. the gate protection circuit of IGBT according to claim 1, is characterized in that:
Also comprise the first diode D, described the first diode D is connected in parallel on the two ends of described the first path as alternate path, for accelerating the turn-off speed of described IGBT;
The negative electrode of described the first diode D connects the input of described the first path, the output of the first path described in the anodic bonding of described the first diode D.
7. the gate protection circuit of IGBT according to claim 6, is characterized in that:
Described the first diode D is high-frequency rectification diode.
8. the gate protection circuit of IGBT according to claim 1, is characterized in that:
Also comprise the second diode D1 and the 3rd resistance R 3; The anodic bonding of described the second diode D1 is to one end of described the first path, and the negative electrode of described the second diode D1 is connected and is connected to the negative pole of the driving signal of the drive circuit of described IGBT after described the 3rd resistance R 3, forms three-way.
9. the gate protection circuit of IGBT according to claim 8, is characterized in that:
Described the second diode D1 is low frequency rectifier diode.
10. the gate protection circuit of IGBT according to claim 8, is characterized in that:
Described the 3rd resistance R 3 is perceptual resistance, and the Standard resistance range of described the 3rd resistance R 3 is 5 Ω～5000 Ω.
The gate protection circuit of 11. IGBT according to claim 10, is characterized in that:
Described the 3rd resistance R 3 is cement resistor, and the value of described the 3rd resistance R 3 is 100 Ω.
The gate protection circuit of 12. IGBT according to claim 8, is characterized in that:
The anodic bonding of described the second diode D1 is to the input of described the first path, and the negative electrode of described voltage stabilizing didoe Z is connected to the output of described the first path.
The gate protection circuit of 13. IGBT according to claim 8, is characterized in that:
The anodic bonding of described the second diode D1 is to the output of described the first path, and the negative electrode of described voltage stabilizing didoe Z is connected to the output of described the first path.
The gate protection circuit of 14. IGBT according to claim 8, is characterized in that:
The anodic bonding of described the second diode D1 is to the input of described the first path, and the negative electrode of described voltage stabilizing didoe Z is connected to the input of described the first path.
15. 1 kinds of electromagnetic ovens, is characterized in that, comprise the gate protection circuit of the IGBT described in claim 1-14 any one.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410287001.9A CN104092449B (en) | 2014-06-24 | 2014-06-24 | IGBT grid protection circuit and induction cooker |
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| CN201410287001.9A CN104092449B (en) | 2014-06-24 | 2014-06-24 | IGBT grid protection circuit and induction cooker |
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| CN104092449A true CN104092449A (en) | 2014-10-08 |
| CN104092449B CN104092449B (en) | 2017-05-31 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111030662A (en) * | 2019-12-02 | 2020-04-17 | 精进电动科技股份有限公司 | IGBT grid drive circuit |
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| CN203574623U (en) * | 2013-11-07 | 2014-04-30 | 广东美的制冷设备有限公司 | IGBT driving circuit |
| JP2014093892A (en) * | 2012-11-06 | 2014-05-19 | Fuji Electric Co Ltd | Driving device for voltage drive type semiconductor element |
| CN204031103U (en) * | 2014-06-24 | 2014-12-17 | 珠海格力电器股份有限公司 | IGBT grid protection circuit and induction cooker |
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2014
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014093892A (en) * | 2012-11-06 | 2014-05-19 | Fuji Electric Co Ltd | Driving device for voltage drive type semiconductor element |
| CN203574623U (en) * | 2013-11-07 | 2014-04-30 | 广东美的制冷设备有限公司 | IGBT driving circuit |
| CN204031103U (en) * | 2014-06-24 | 2014-12-17 | 珠海格力电器股份有限公司 | IGBT grid protection circuit and induction cooker |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111030662A (en) * | 2019-12-02 | 2020-04-17 | 精进电动科技股份有限公司 | IGBT grid drive circuit |
| CN111030662B (en) * | 2019-12-02 | 2024-01-23 | 精进电动科技股份有限公司 | IGBT grid driving circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104092449B (en) | 2017-05-31 |
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