CN203840190U - High-power anti-interference field effect transistor high-speed drive circuit - Google Patents
High-power anti-interference field effect transistor high-speed drive circuit Download PDFInfo
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- CN203840190U CN203840190U CN201420165200.8U CN201420165200U CN203840190U CN 203840190 U CN203840190 U CN 203840190U CN 201420165200 U CN201420165200 U CN 201420165200U CN 203840190 U CN203840190 U CN 203840190U
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- 230000005669 field effect Effects 0.000 title claims abstract description 61
- 239000003990 capacitor Substances 0.000 claims abstract description 53
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 47
- 230000001681 protective effect Effects 0.000 claims description 16
- 230000000694 effects Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000024241 parasitism Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Abstract
The utility model discloses a high-power anti-interference field effect transistor high-speed drive circuit which at least comprises a drive voltage Vg, a voltage stabilizing circuit, a negative voltage circuit and a field effect transistor Q. The voltage stabilizing circuit is composed of a voltage stabilizing diode D1 and a current-limiting resistor R1. The negative voltage circuit is composed of a diode D2, a capacitor C1, a voltage stabilizing diodeD3, a transistor T1, a gate input resistor R2 and a capacitor C3. The protection circuit is composed of a diode D4, a protection resistor R3 and a filter capacitor C2. Both of the voltage stabilizing circuit and the negative voltage circuit are connected with the drive voltage Vg and the field effect transistor Q. The protection circuit is arranged on the negative voltage circuit. The high-power anti-interference field effect transistor high-speed drive circuit of the utility model has the following advantages that the drive circuit has advantages of simple structure and low cost, the drive circuit can be used to drive the operation of the field effect transistor in a high speed and generate a negative voltage when the voltage is finished to fast switch off the field effect transistor, the on/off speed of the field effect transistor can be quickened, the anti-interference capability of the drive circuit can be improved, the mis-conduction of switching elements can be effectively prevented, and the drive circuit is suitable for being used in occasions having high frequency, high power and high circuit anti-interference requirements.
Description
Technical field
The utility model belongs to power electronics and drives applied technical field, relates in particular to a kind of high-power jamproof field effect transistor high-speed driving circuit, the occasion that this circuit is applicable to high frequency and circuit anti-interference is had relatively high expectations.
Background technology
Along with the development of power semiconductor device, power field effect transistor has become device the most frequently used in Switching Power Supply, due to advantages such as its switching speed is fast, driving power is little, easy parallel connections, be widely used in the occasion of high frequency, middle low power, especially providing in the low-voltage, high-current Switching Power Supply of energy for communication electronic equipments such as computer, switch, the webservers.
At present, the switching frequency that voltage source drives has exceeded 1MHz, but the too high meeting of switching frequency causes series of problems, the Main Bottleneck that wherein hinders the raising of voltage source driving switch frequency is exactly loss, the loss of gate-drive and the loss of switching device output capacitance of switching device turn-on and turn-off process, than traditional drive circuit, high frequency negative pressure drives in the process that can disconnect at switch and turn-offs fast field effect transistor with minus negative pressure, reduce the circuit loss of high frequency, improve the anti-interference of drive circuit, solve foregoing circuit problem.
Summary of the invention
The technical problems to be solved in the utility model is, in view of the foregoing defects the prior art has and not enough, a kind of high-power jamproof field effect transistor high-speed driving circuit is provided, accelerate the switching speed of field effect transistor, improve the antijamming capability of drive circuit, effectively prevented misleading of switching device.
The utility model for solving the problems of the technologies described above adopted technical scheme is:
A kind of high-power jamproof field effect transistor high-speed driving circuit, at least comprises driving voltage Vg, voltage stabilizing circuit, negative pressure circuit and field effect transistor Q,
Described voltage stabilizing circuit is made up of voltage stabilizing didoe D1 and current-limiting resistance R1, the negative pole of voltage stabilizing didoe D1 is connected with described driving voltage Vg, the positive pole of voltage stabilizing didoe D1 is connected with one end of current-limiting resistance R1, and the other end of current-limiting resistance R1 is connected with the source electrode of described field effect transistor Q;
Described negative pressure circuit is made up of diode D2, capacitor C 1, voltage stabilizing didoe D3, triode T1, grid input resistance R2 and capacitor C 3, the positive pole of diode D2 is connected with described driving voltage Vg, the negative pole of diode D2 is connected with the positive pole of capacitor C 1, the negative pole of voltage stabilizing didoe D3 simultaneously, and the negative pole of capacitor C 1 is connected with the positive pole of voltage stabilizing didoe D3; The base stage of triode T1 is connected with the positive pole of diode D2, and the collector electrode of triode T1 is connected with the positive pole of capacitor C 1, and the emitter of triode T1 is connected with the source electrode of described field effect transistor Q; Grid input resistance R2 is connected between the negative pole of capacitor C 1 and the grid of field effect transistor Q, and capacitor C 3 is connected in parallel with resistance R 2 and the positive pole of capacitor C 3 is connected with the positive pole of voltage stabilizing didoe D3.
Press such scheme; this field effect transistor high-speed driving circuit also comprises protective circuit; described protective circuit is made up of diode D4, protective resistance R3 and filter capacitor C2; the positive pole of diode D4 is connected with the grid of field effect transistor Q; the negative pole of diode D4 is connected with the positive pole of capacitor C 1; protective resistance R3 is connected between the grid and gate pole of field effect transistor Q, and filter capacitor C2 is connected in parallel with resistance R 3 and the positive pole of filter capacitor C2 is connected with the grid of field effect transistor Q.
Press such scheme, described triode T1 is positive-negative-positive triode.
Press such scheme, the voltage stabilizing value of described voltage stabilizing didoe D1, voltage stabilizing didoe D3 is 5V.
Operation principle of the present utility model is: the voltage stabilizing circuit being directly connected with driving voltage Vg, in the time that driving voltage Vg is positive voltage, positive voltage is shaken to spike and is limited in the magnitude of voltage at voltage stabilizing circuit two ends, it is 1 o'clock at driving voltage Vg, the conducting of voltage of voltage regulation road, and charge for capacitor C 1, current-limiting resistance R1 is used for preventing that voltage stabilizing circuit electric current is excessive; In the time that driving voltage Vg is zero, between the grid of negative pressure circuit being on the scene effect pipe Q and source electrode, produce negative voltage, diode D2 can prevent reverse direction current flow, capacitor C 1 is utilized charge pump principle to sport at cathode voltage at 1 o'clock and is produced negative pressure, the voltage stabilizing didoe D3 in parallel with capacitor C 1 ensures that capacitor C 1 both end voltage is stable, positive-negative-positive triode T1 is used for providing passage for producing negative pressure, and resistance R 2 ensures the discharge time of charge pump; Protective resistance R3 in protective circuit is connected between the grid and source electrode of field effect transistor Q; prevent electrostatic breakdown; the little electric capacity of filter capacitor C2() strobe; reduce the distortion phenomenon on edge, driving pulse front and back; the effect of diode D4 is to provide Low ESR discharge channel to the filter capacitor C2 of field effect transistor Q grid parasitism; accelerate filter capacitor C2 electric discharge, thereby accelerate the shutoff of field effect transistor Q.
The beneficial effects of the utility model: this field effect transistor high-speed driving circuit is simple in structure, with low cost, can the work of high-speed driving field effect transistor and in the time that voltage finishes, produce negative pressure and turn-off fast field effect transistor, accelerate the switching speed of field effect transistor, improve the antijamming capability of drive circuit, effectively prevent misleading of switching device, be particularly useful for high frequency, the occasion that high-power and circuit anti-interference is had relatively high expectations.
Brief description of the drawings
Fig. 1 is the circuit structure diagram of the utility model drive circuit;
Fig. 2 is the utility model embodiment driving voltage waveform figure;
Fig. 3 is the voltage oscillogram between grid and the source electrode of the utility model embodiment field effect transistor;
In Fig. 1, Vg is driving voltage, and Q is field effect transistor, and C1, C2, C3 are that electric capacity, D2, D4 are diode, and D1, D3 are voltage stabilizing didoe, and R1, R2, R3 are resistance, and T1 is triode;
In Fig. 2, Fig. 3, D is duty ratio, and T is switch periods, and DT is ON time, and (1-D) T is the turn-off time, and Vg is driving voltage, the voltage between grid and source electrode that Vgs is field effect transistor.
Embodiment
Below in conjunction with drawings and Examples, the utility model is elaborated.
Shown in Fig. 1, high-power jamproof field effect transistor high-speed driving circuit described in the utility model, comprises driving voltage Vg, voltage stabilizing circuit, negative pressure circuit, protective circuit and field effect transistor Q,
Described voltage stabilizing circuit is made up of voltage stabilizing didoe D1 and current-limiting resistance R1, the negative pole of voltage stabilizing didoe D1 is connected with described driving voltage Vg, the positive pole of voltage stabilizing didoe D1 is connected with one end of current-limiting resistance R1, and the other end of current-limiting resistance R1 is connected with the source electrode of described field effect transistor Q;
Described negative pressure circuit is made up of diode D2, capacitor C 1, voltage stabilizing didoe D3, triode T1, grid input resistance R2 and capacitor C 3, the positive pole of diode D2 is connected with described driving voltage Vg, the negative pole of diode D2 is connected with the positive pole of capacitor C 1, the negative pole of voltage stabilizing didoe D3 simultaneously, and the negative pole of capacitor C 1 is connected with the positive pole of voltage stabilizing didoe D3; The base stage of triode T1 is connected with the positive pole of diode D2, and the collector electrode of triode T1 is connected with the positive pole of capacitor C 1, and the emitter of triode T1 is connected with the source electrode of described field effect transistor Q; Grid input resistance R2 is connected between the negative pole of capacitor C 1 and the grid of field effect transistor Q, and capacitor C 3 is connected in parallel with resistance R 2 and the positive pole of capacitor C 3 is connected with the positive pole of voltage stabilizing didoe D3;
Described protective circuit is made up of diode D4, protective resistance R3 and filter capacitor C2; the positive pole of diode D4 is connected with the grid of field effect transistor Q; the negative pole of diode D4 is connected with the positive pole of capacitor C 1; protective resistance R3 is connected between the grid and gate pole of field effect transistor Q, and filter capacitor C2 is connected in parallel with resistance R 3 and the positive pole of filter capacitor C2 is connected with the grid of field effect transistor Q.
When work, the voltage stabilizing circuit being directly connected with driving voltage Vg, in the time that driving voltage Vg is positive voltage, positive voltage is shaken to spike and is limited in the magnitude of voltage at voltage stabilizing circuit two ends, it is 1 o'clock at driving voltage Vg, the conducting of voltage of voltage regulation road, and charge for capacitor C 1, current-limiting resistance R1 is used for preventing that voltage stabilizing circuit electric current is excessive; In the time that driving voltage Vg is zero, between the grid of negative pressure circuit being on the scene effect pipe Q and source electrode, produce negative voltage, diode D2 can prevent reverse direction current flow, capacitor C 1 is utilized charge pump principle to sport at cathode voltage at 1 o'clock and is produced negative pressure, the voltage stabilizing didoe D3 in parallel with capacitor C 1 ensures that capacitor C 1 both end voltage is stable, positive-negative-positive triode T1 is used for providing passage for producing negative pressure, and resistance R 2 ensures the discharge time of charge pump; Protective resistance R3 in protective circuit is connected between the grid and source electrode of field effect transistor Q; prevent electrostatic breakdown; the little electric capacity of filter capacitor C2() strobe; reduce the distortion phenomenon on edge, driving pulse front and back; the effect of diode D4 is to provide Low ESR discharge channel to the filter capacitor C2 of field effect transistor Q grid parasitism; accelerate filter capacitor C2 electric discharge, thereby accelerate the shutoff of field effect transistor Q.
The signal waveforms of Fig. 2 driving voltage Vg, Fig. 3 is the oscillogram of the voltage Vgs between grid and the source electrode of field effect transistor Q; If the duty ratio of driving voltage Vg is D, switch periods is T.In Fig. 2, in DT ON time, when driving voltage Vg is continuously 5V, the voltage Vgs in Fig. 3 between grid and the source electrode of field effect transistor Q is higher than threshold voltage, and the field effect transistor Q of armature winding is open-minded.Within (1-D) T turn-off time, driving voltage Vg is when 5V becomes 0V, and the voltage Vgs between field effect transistor Q grid and source electrode becomes negative value, has realized the high frequency negative pressure of field effect transistor Q and has turn-offed, reduce the loss of drive circuit, improved the anti-interference of circuit.
Above content is the further description of the utility model being done in conjunction with concrete preferred implementation, can not assert that concrete enforcement of the present utility model is confined to these explanations.For the those of ordinary skill of technical field described in the utility model, without departing from the concept of the premise utility, can also make some simple deduction or replace, within said structure all should be included in protection range of the present utility model.
Claims (4)
1. a high-power jamproof field effect transistor high-speed driving circuit, is characterized in that: at least comprise driving voltage Vg, voltage stabilizing circuit, negative pressure circuit and field effect transistor Q,
Described voltage stabilizing circuit is made up of voltage stabilizing didoe D1 and current-limiting resistance R1, the negative pole of voltage stabilizing didoe D1 is connected with described driving voltage Vg, the positive pole of voltage stabilizing didoe D1 is connected with one end of current-limiting resistance R1, and the other end of current-limiting resistance R1 is connected with the source electrode of described field effect transistor Q;
Described negative pressure circuit is made up of diode D2, capacitor C 1, voltage stabilizing didoe D3, triode T1, grid input resistance R2 and capacitor C 3, the positive pole of diode D2 is connected with described driving voltage Vg, the negative pole of diode D2 is connected with the positive pole of capacitor C 1, the negative pole of voltage stabilizing didoe D3 simultaneously, and the negative pole of capacitor C 1 is connected with the positive pole of voltage stabilizing didoe D3; The base stage of triode T1 is connected with the positive pole of diode D2, and the collector electrode of triode T1 is connected with the positive pole of capacitor C 1, and the emitter of triode T1 is connected with the source electrode of described field effect transistor Q; Grid input resistance R2 is connected between the negative pole of capacitor C 1 and the grid of field effect transistor Q, and capacitor C 3 is connected in parallel with resistance R 2 and the positive pole of capacitor C 3 is connected with the positive pole of voltage stabilizing didoe D3.
2. high-power jamproof field effect transistor high-speed driving circuit as claimed in claim 1; it is characterized in that: this field effect transistor high-speed driving circuit also comprises protective circuit; described protective circuit is made up of diode D4, protective resistance R3 and filter capacitor C2; the positive pole of diode D4 is connected with the grid of field effect transistor Q; the negative pole of diode D4 is connected with the positive pole of capacitor C 1; protective resistance R3 is connected between the grid and gate pole of field effect transistor Q, and filter capacitor C2 is connected in parallel with resistance R 3 and the positive pole of filter capacitor C2 is connected with the grid of field effect transistor Q.
3. high-power jamproof field effect transistor high-speed driving circuit as claimed in claim 1, is characterized in that: described triode T1 is positive-negative-positive triode.
4. high-power jamproof field effect transistor high-speed driving circuit as claimed in claim 1, is characterized in that: the voltage stabilizing value of described voltage stabilizing didoe D1, voltage stabilizing didoe D3 is 5V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420165200.8U CN203840190U (en) | 2014-04-04 | 2014-04-04 | High-power anti-interference field effect transistor high-speed drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420165200.8U CN203840190U (en) | 2014-04-04 | 2014-04-04 | High-power anti-interference field effect transistor high-speed drive circuit |
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| CN203840190U true CN203840190U (en) | 2014-09-17 |
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| CN201420165200.8U Expired - Fee Related CN203840190U (en) | 2014-04-04 | 2014-04-04 | High-power anti-interference field effect transistor high-speed drive circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944361A (en) * | 2014-04-04 | 2014-07-23 | 国家电网公司 | Field effect transistor high-speed drive circuit high in power and resistant to interference |
| CN105406692A (en) * | 2015-12-11 | 2016-03-16 | 深圳市瑞凌实业股份有限公司 | IGBT driving circuit |
| US10886912B2 (en) | 2018-07-26 | 2021-01-05 | Delta Electronics, Inc. | Gate circuit and gate drive circuit for power semiconductor switch |
-
2014
- 2014-04-04 CN CN201420165200.8U patent/CN203840190U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944361A (en) * | 2014-04-04 | 2014-07-23 | 国家电网公司 | Field effect transistor high-speed drive circuit high in power and resistant to interference |
| CN105406692A (en) * | 2015-12-11 | 2016-03-16 | 深圳市瑞凌实业股份有限公司 | IGBT driving circuit |
| US10886912B2 (en) | 2018-07-26 | 2021-01-05 | Delta Electronics, Inc. | Gate circuit and gate drive circuit for power semiconductor switch |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140917 |
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| CF01 | Termination of patent right due to non-payment of annual fee |