CN103683872A - Half-bridge driving circuit - Google Patents
Half-bridge driving circuit Download PDFInfo
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- CN103683872A CN103683872A CN201210334496.7A CN201210334496A CN103683872A CN 103683872 A CN103683872 A CN 103683872A CN 201210334496 A CN201210334496 A CN 201210334496A CN 103683872 A CN103683872 A CN 103683872A
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Abstract
The invention discloses a half-bridge driving circuit which comprises a bootstrap circuit and a half-bridge circuit, and further comprises a first switch circuit, a second switch circuit, a first discharge circuit and a second discharge circuit, wherein the bootstrap circuit comprises a diode and a capacitor; the first switch circuit is powered on when a first control signal is in high level and is powered off in low level; the second switch circuit is powered on when a second control signal is in low level and is powered off in high level; the first discharge circuit is powered off when the first switch circuit is powered on and is powered on when the first switch circuit is powered off; the second discharge circuit is powered on when the second control signal is in high level and is powered off in low level; the on/off states of the two switch circuits are changed by changing the input control signals so as to control the on/off of upper and lower bridges; when the first discharge circuit is powered on, a control end of the upper bridge can be controlled to discharge electricity so as to accelerate the upper bridge to be closed; when the second discharge circuit is powered on, a control end of the lower bridge can be controlled to discharge electricity so as to accelerate the lower bridge to be closed. The electricity discharge speeds of the control ends of the upper bridge and the lower bridge are respectively accelerated through the first discharge circuit and the second discharge circuit.
Description
Technical field
The present invention relates to a kind of drive circuit of Switching Power Supply, particularly relate to a kind of half-bridge drive circuit.
Background technology
Switching Power Supply is to utilize modern power electronics technology, and the time ratio that control switch pipe turns on and off maintains a kind of power supply of regulated output voltage, has the series of advantages such as volume is little, efficiency is high, in each electronic product, is widely used.In the Switching Power Supply of relatively high power, need to drive half-bridge circuit with half-bridge drive circuit, but the driving on the high-end limit of half-bridge drive circuit needs high pressure to realize, so generally all adopt the integrated circuit of band bootstrapping function as half-bridge drive circuit.
Half-bridge circuit is realized by two semiconductor field effect transistors (MOSFET) or insulated gate bipolar transistor (IGBT) conventionally, the drain electrode (or collector electrode) of wherein going up bridge transistor is connected with power supply, source electrode (or emitter) is connected with the drain electrode (or collector electrode) of lower bridge transistor, and the source electrode of lower bridge transistor (or emitter) is connected with ground wire.The output of half-bridge circuit is the common port of upper and lower bridge.
General half-bridge drive circuit is for driving the half-bridge output stage with the high-end and low side being coupled at high-voltage output end, it is included in low-voltage control circuit and Fu Jing in integrated circuit, also comprise the timing circuit starting for controlling described high-end power transistor, half-bridge driver circuit comprises high voltage interface circuit, for the described control output of described low-voltage control circuit is coupled to described timing circuit.In this way, can obtain integrated half-bridge driver circuit.
Traditional half-bridge drive circuit is slower to the velocity of discharge of upper and lower bridge control end.
Summary of the invention
Based on this, being necessary for traditional half-bridge drive circuit, to the slower problem of the velocity of discharge of upper and lower bridge control end, provides a kind of half-bridge drive circuit of accelerating the velocity of discharge.
A kind of half-bridge drive circuit, comprise boostrap circuit and half-bridge circuit, described boostrap circuit comprises the first diode and bootstrap capacitor, the positive pole of described the first diode is provided with power access end, negative pole connects one end of described bootstrap capacitor, the other end of described bootstrap capacitor connects the common port of described half-bridge circuit Shang Qiao and lower bridge, also comprises: bias unit, is connected between the control end and input of described the first discharge circuit; The first switching circuit, comprise input, output and control end, described input connects the common port of described the first diode and bootstrap capacitor, described output connects the control end of upper bridge in described half-bridge circuit by the first current-limiting resistance, the control end of described the first switching circuit is used for inputting the first control signal.The conducting when described the first control signal is high level of described the first switching circuit, turn-offs when described the first control signal is low level.Second switch circuit, comprise input, output and control end, the input of described second switch circuit is provided with described power access end, the output of described second switch circuit connects the control end of lower bridge in described half-bridge circuit, and the control end of described second switch circuit is used for inputting the second control signal.The conducting when described the second control signal is low level of described second switch circuit, turn-offs when described the second control signal is high level.The first discharge circuit, comprise input, output and control end, the control end of described the first discharge circuit is connected with the output of described the first switching circuit, the input of described the first discharge circuit connects in described half-bridge circuit the control end of bridge, and the output of described the first discharge circuit connects the common port of Shang Qiao and lower bridge in described half-bridge circuit.Described the first discharge circuit turn-offs when described the first switching circuit conducting, conducting when described the first switching circuit turn-offs.The second discharge circuit, comprise input, output and control end, the input of described the second discharge circuit connects the control end of lower bridge in described half-bridge circuit, the output head grounding of described the second discharge circuit, and the control end of described the second discharge circuit is used for inputting the second control signal.The conducting when described the second control signal is high level of described the second discharge circuit, turn-offs when described the second control signal is low level.
In an embodiment, described bias unit is the first current-limiting resistance therein.
Therein in an embodiment, described the first switching circuit comprises the first switching tube of the first conduction type and the second switch pipe of the second conduction type, the control end of described the first switching tube is the control end of described the first switching circuit, the output head grounding of described the first switching tube, the input of described the first switching tube is connected with the control end of described second switch pipe.Between the control end of described second switch pipe and input, be provided with the first biasing resistor, the output of described second switch pipe is the output of described the first switching circuit, and the input of described second switch pipe is the input of described the first switching circuit.Described second switch circuit comprises the 3rd switching tube of the first conduction type and the 4th switching tube of the second conduction type, the output of described the 3rd switching tube is the control end of described second switch circuit, the control end of described the 3rd switching tube is connected with described power access end by the second current-limiting resistance, and the input of described the 3rd switching tube is connected with the control end of described the 4th switching tube.Between the control end of described the 4th switching tube and input, be provided with the second biasing resistor, the output of described the 4th switching tube is the output of described second switch circuit and is connected with the control end of described lower bridge by the 3rd current-limiting resistance; The input of described the 4th switching tube is the input of described second switch circuit.Described the first discharge circuit comprises the 5th switching tube of the second conduction type, the control end of described the 5th switching tube is the control end of described the first discharge circuit, the input of described the 5th switching tube is the input of described the first discharge circuit, the output of described the 5th switching tube is the output of described the first discharge circuit, is provided with the 3rd biasing resistor between the output of described the 5th switching tube and control end.Described the second discharge circuit comprises the 6th switching tube of the first conduction type, the control end of described the 6th switching tube is the control end of described the second discharge circuit, the input of described the 6th switching tube is the input of described the second discharge circuit, and the output of described the 6th switching tube is the output of described the second discharge circuit.
Therein in an embodiment, described the first discharge circuit comprises and is arranged at the input of described the 5th switching tube and the first discharge capacity between output; Described the second discharge circuit comprises and is arranged at the input of described the 6th switching tube and the second discharge capacity between output.
In an embodiment, described the first switching circuit comprises decoupling capacitance therein, and one end of described decoupling capacitance connects described power access end, the other end ground connection of described decoupling capacitance.
Therein in an embodiment, described second switch circuit comprises divider resistance and voltage-stabiliser tube, described divider resistance is arranged between described power access end and described the second current-limiting resistance, the negative pole of described voltage-stabiliser tube is connected in the common port of described the second current-limiting resistance and divider resistance, the plus earth of described voltage-stabiliser tube.
In an embodiment, described the first switching circuit comprises the 4th current-limiting resistance and the 5th current-limiting resistance therein, and described the 4th current-limiting resistance series connection is arranged at the control end of described the first switching tube; Described the 5th current-limiting resistance series connection is arranged at the output of described the first switching tube.
In an embodiment, described second switch circuit comprises the 6th current-limiting resistance and the 7th current-limiting resistance therein, and described the 6th current-limiting resistance series connection is arranged at the output of described the 3rd switching tube; Described the 7th current-limiting resistance series connection is arranged at the control end of described the 6th switching tube.
Therein in an embodiment, described half-bridge drive circuit comprises the second diode, between the output that described the second diode is arranged on described second switch pipe and described bias unit and the positive pole of described the second diode be connected with the output of described second switch pipe.
During the work of above-mentioned half-bridge drive circuit, power access end access DC power supply, when the first control signal and the second control signal be high level simultaneously, the first switching circuit conducting, the first discharge circuit shutoff, upper bridge conducting.Because the second control signal is high level, second switch circuit turn-offs lower bridge is turn-offed, and now the second discharging circuit conduction is realized the control end electric discharge of lower bridge is accelerated to the shutoff of lower bridge.When the first control signal and the second control signal are low level simultaneously, second switch circuit turn-on, the second discharge circuit turn-offs, lower bridge conducting.Because the first control signal is low level, the first switching circuit turn-offs bridge is turn-offed, and the first discharging circuit conduction is realized this electric discharge of control end to upper bridge and accelerated the shutoff of upper bridge.Time because the conducting of lower bridge drops to the output end voltage of upper bridge, approach zero volt, thereby make bootstrap capacitor through DC power supply → the first diode → bootstrap capacitor → GND loop charging of power access end input, for conducting next time ready.The boostrap circuit consisting of the first diode and bootstrap capacitor, has realized and has utilized low-voltage to remove to drive bridge transistor.Utilize the first discharge circuit and the second discharge circuit to accelerate respectively the control end velocity of discharge of Shang Qiao and lower bridge, thereby the speed that can accelerate Shang Qiao and the cut-off of lower bridge, namely makes the turn-off time shorten, and reduces the power consumption of Shang Qiao and lower bridge, its heating is reduced, increase its reliability.
Accompanying drawing explanation
Fig. 1 is the circuit structure diagram of half-bridge drive circuit in an embodiment;
Fig. 2 is the circuit theory diagrams of half-bridge drive circuit in an embodiment.
Embodiment
A half-bridge drive circuit, as shown in Figure 1, comprises boostrap circuit, half-bridge circuit, the first switching circuit 110, second switch circuit 120, the first discharge circuit 130, the second discharge circuit 140 and bias unit.In the present embodiment, bias unit is the first current-limiting resistance R2, also can adopt in other embodiments other can produce the element of required pressure drop.Boostrap circuit comprises the first diode D1 and bootstrap capacitor C2, the positive pole of the first diode D1 is provided with power access end, negative pole connects one end of bootstrap capacitor C2, the other end of bootstrap capacitor C2 connects the common port of half-bridge circuit Shang Qiao and lower bridge, the Shang Qiao of half-bridge circuit and lower bridge can be field-effect transistor (MOSFET), also can be insulated gate bipolar transistor (IGBT), the input of wherein going up bridge is connected with power supply, output is connected with the input of lower bridge, and the output of lower bridge is connected with ground wire.
The first switching circuit 110 comprises input, output and control end, input connects the common port of the first diode D1 and bootstrap capacitor C2, output connects the control end of upper bridge in half-bridge circuit by the first current-limiting resistance R2, the control end of the first switching circuit 110 is used for inputting the first control signal.First switching circuit 110 conducting when the first control signal is high level, turn-offs when the first control signal is low level.
The first discharge circuit 130, comprise input, output and control end, the control end of the first discharge circuit 130 is connected with the output of the first switching circuit 110, the input of the first discharge circuit 130 connects the control end of upper bridge in half-bridge circuit, the common port of Shang Qiao and lower bridge in the output connection half-bridge circuit of the first discharge circuit 130.The first discharge circuit 130 turn-offs when the first switching circuit 110 conducting, conducting when the first switching circuit 110 turn-offs.
The second discharge circuit 140, comprise input, output and control end, the input of the second discharge circuit 140 connects the control end of lower bridge in half-bridge circuit, the output head grounding of the second discharge circuit 140, and the control end of the second discharge circuit 140 is used for inputting the second control signal.Second discharge circuit 140 conducting when the second control signal is high level, turn-offs when the second control signal is low level.
During the work of above-mentioned half-bridge drive circuit, power access end access DC power supply, when the first control signal and the second control signal be high level simultaneously, the first switching circuit 110 conductings, the first discharge circuit 130 shutoffs, upper bridge conducting.Because the second control signal is high level, second switch circuit 120 turn-offs lower bridge is turn-offed, and now the second discharge circuit 140 conductings realize accelerates the shutoff of lower bridge to the control end electric discharge of lower bridge.When the first control signal and the second control signal are low level simultaneously, 120 conductings of second switch circuit, the second discharge circuit 140 turn-offs, lower bridge conducting.Because the first control signal is low level, the first switching circuit 110 turn-offs bridge is turn-offed, and the first discharge circuit 130 conductings realize accelerates the shutoff of upper bridge to the control end electric discharge of upper bridge.Now because the conducting of lower bridge drops to the output end voltage of upper bridge, approach zero volt, thereby make bootstrap capacitor C2 through DC power supply → the first diode D1 → bootstrap capacitor C2 → GND loop charging of power access end input, for conducting next time ready.The boostrap circuit consisting of the first diode D1 and bootstrap capacitor C2, has realized and has utilized low-voltage to remove to drive bridge transistor.Utilize the first discharge circuit 130 and the second discharge circuit 140 to accelerate respectively the control end velocity of discharge of Shang Qiao and lower bridge.Meanwhile, the drive circuit forming with discrete components and parts replaces integrated drive electronics, has the advantages that cost is low, be convenient to maintenance.
As shown in Figure 2, in this circuit, upper and lower bridge adopts metal-oxide-semiconductor, and power access end accesses positive 15 volts of DC power supply.The first switching circuit 110 comprises the first triode Q1 of NPN type and the second triode Q2 of positive-negative-positive, the base stage of the first triode Q1 is the control end of the first switching circuit 110, the grounded emitter of the first triode Q1, collector electrode is connected with the base stage of the second triode Q2.Between the base stage of the second triode Q2 and emitter, be provided with the first biasing resistor R1, the current collection of the second triode Q2 is the output of the first switching circuit 110 very, and the transmitting of the second triode Q2 is the input of the first switching circuit 110 very.
The first discharge circuit 130 comprises the 5th triode Q3 of positive-negative-positive, the base stage of the 5th triode Q3 is the control end of the first discharge circuit 130, the transmitting of the 5th switching tube Q3 is the input of the first discharge circuit 130 very, the current collection of the 5th triode Q3 is the output of the first discharge circuit 130 very, is provided with the 3rd biasing resistor R3 between the collector electrode of the 5th triode and base stage.
The second discharge circuit 140 comprises the 6th triode Q5 of NPN type, the base stage of the 6th triode Q5 is the control end of the second discharge circuit 140, the current collection of the 6th triode Q5 is the input of the second discharge circuit 140 very, and the transmitting of the 6th triode Q5 is the output of the second discharge circuit 140 very.
In other embodiments, also can adopt N-channel MOS pipe belt for NPN type triode, with P channel MOS tube, replace positive-negative-positive triode.
In the present embodiment, control signal high level can be set as to 5V, low level is set as 0V.When the first control signal DR-H and the second control signal DR-L are 5V for high level simultaneously, the first triode Q1, the second triode Q2 conducting, the 5th triode Q3 closes, the voltage of bootstrap capacitor C2 one end is added to the grid of upper bridge metal-oxide-semiconductor Q7 after the second triode Q2, the first current-limiting resistance R2 step-down, makes bridge metal-oxide-semiconductor Q7 conducting.In conduction period, the source voltage of upper bridge metal-oxide-semiconductor Q7 approaches the voltage of power supply BT1, thus the voltage at bootstrap capacitor C2 two ends along with the source voltage of upper bridge metal-oxide-semiconductor Q7 floats together, upper bridge metal-oxide-semiconductor Q7 maintains conducting by the electrical potential difference at bootstrap capacitor C2 two ends.Because the second control signal DR-L is high level, the 3rd triode Q4, the 4th triode Q6 close, and the 6th triode Q5 conducting realizes to be accelerated lower bridge metal-oxide-semiconductor Q8 and close the grid electric discharge of lower bridge metal-oxide-semiconductor Q8.When the first control signal DR-H and the second control signal DR-L are low level simultaneously, the 3rd triode Q4, the 4th triode Q6 conducting, the 6th triode Q5 closes, and half-bridge drive circuit is the gate charges of lower bridge metal-oxide-semiconductor Q8 by the 3rd current-limiting resistance R9, makes lower bridge metal-oxide-semiconductor Q8 conducting.Because the first control signal DR-H is low level, the first triode Q1, the second triode Q2 close, and the 5th triode Q3 conducting realizes closes the upper bridge metal-oxide-semiconductor Q7 of grid electric discharge acceleration of upper bridge metal-oxide-semiconductor Q7.Now due to the conducting of lower bridge metal-oxide-semiconductor Q8, the source voltage of bridge metal-oxide-semiconductor Q7 is dropped to and approaches zero volt, thereby make bootstrap capacitor C2 through the charging of 15V power supply → the first diode D1 → bootstrap capacitor C2 → GND loop, for conducting next time ready.Utilize the 5th triode Q3 and the 6th triode Q5 to accelerate respectively the grid velocity of discharge of upper bridge metal-oxide-semiconductor Q7 and lower bridge metal-oxide-semiconductor Q8.Meanwhile, with the drive circuit that discrete components and parts form, replaced integrated drive electronics, had the advantages that cost is low, be convenient to maintenance.
The first control signal DR-H and the second control signal DR-L should do one's utmost to avoid for high state simultaneously, otherwise can burn out metal-oxide-semiconductor, therefore need to set the state appearance that certain Dead Time prevents conducting simultaneously.In an embodiment, the first control signal DR-H and the second control signal DR-L adopt same control signal therein, can be pulse width modulating signal (PWM).
Shown in Fig. 2, in circuit, the voltage of DC power supply only has 15 volts, and the load being driven by half-bridge circuit (not showing in Fig. 2) required voltage is 36V.By suitable circuit parameter is set, more than the voltage that can make boostrap circuit produce reaches 40V.After upper bridge metal-oxide-semiconductor Q7 conducting, the source voltage of upper bridge metal-oxide-semiconductor Q7 is 36V, and the grid voltage of upper bridge metal-oxide-semiconductor Q7 is more than 40V, goes up like this Vgs of bridge metal-oxide-semiconductor Q7 more than 4V, be easy to find suitable metal-oxide-semiconductor to complete conducting function, realize the driving of low-voltage control signal to high pressure.
In an embodiment, the first switching circuit 110 also comprises decoupling capacitance C1 therein, and one end of decoupling capacitance C1 connects power access end, the other end ground connection of decoupling capacitance C1.When before and after decoupling capacitance C1 is used for preventing, circuit network size of current changes, in power supply circuits, formed current russ exerts an influence to the normal work of network, can effectively eliminate the parasitic couplings between circuit network.In addition, can also the 4th current-limiting resistance R4 be set in the base stage series connection of the first triode Q1, at the emitter of the first triode Q1, connect the 5th current-limiting resistance R5 is set.
Between the collector electrode of the second triode Q2 and the first current-limiting resistance R2, can also be provided with the second diode D2, the positive pole of the second diode D2 is connected with the collector electrode of the second triode Q2.Obvious the 4th current-limiting resistance R4, the 5th current-limiting resistance R5 and the second diode D2 can omit in certain embodiments.
Therein in an embodiment, second switch circuit 120 also comprises divider resistance R11 and voltage-stabiliser tube ZD1, divider resistance R11 is arranged between power access end and the second current-limiting resistance R10, the negative pole of voltage-stabiliser tube ZD1 is connected in the common port of the second current-limiting resistance R10 and divider resistance R11, the plus earth of voltage-stabiliser tube ZD1.Voltage-stabiliser tube ZD1 and divider resistance R11 arrange for the 3rd triode Q4 provides base stage to control voltage, and the stable voltage of general voltage-stabiliser tube ZD1 is not less than the value of the second control signal high level, to guarantee that the 3rd triode Q4 reliably closes.
In second switch circuit 120, can also the 6th current-limiting resistance R7 be set in the emitter series connection of the 3rd diode Q4.The base stage series connection of the 6th triode Q5 is provided with the 7th current-limiting resistance R8.Same the 6th current-limiting resistance R7 and the 7th current-limiting resistance R8 also can omit in certain embodiments.
Therein in an embodiment, the first discharge circuit 130 also comprises and is arranged at the collector electrode of the 5th triode Q3 and the first discharge capacity C3 between emitter.The second discharge circuit 140 also comprises and is arranged at the emitter of the 6th triode Q5 and the second discharge capacity C4 between collector electrode.The first discharge capacity C3 and the second discharge capacity C4 are for coordinating respectively the grid velocity of discharge of bridge metal-oxide-semiconductor Q7 and lower bridge metal-oxide-semiconductor Q8 in the 5th triode Q3 and the 6th triode Q5 quickening, thereby can accelerate the speed of metal-oxide-semiconductor cut-off, namely make the turn-off time shorten, reduce the power consumption of metal-oxide-semiconductor, metal-oxide-semiconductor heating is reduced, increase its reliability.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (9)
1. a half-bridge drive circuit, comprise boostrap circuit and half-bridge circuit, described boostrap circuit comprises the first diode and bootstrap capacitor, the positive pole of described the first diode is provided with power access end, negative pole connects one end of described bootstrap capacitor, the other end of described bootstrap capacitor connects the common port of described half-bridge circuit Shang Qiao and lower bridge, it is characterized in that, also comprises:
Bias unit, is connected between the control end and input of described the first discharge circuit;
The first switching circuit, comprise input, output and control end, described input connects the common port of described the first diode and bootstrap capacitor, described output connects the control end of upper bridge in described half-bridge circuit by described bias unit, the control end of described the first switching circuit is used for inputting the first control signal; The conducting when described the first control signal is high level of described the first switching circuit, turn-offs when described the first control signal is low level;
Second switch circuit, comprise input, output and control end, the input of described second switch circuit is provided with described power access end, the output of described second switch circuit connects the control end of lower bridge in described half-bridge circuit, and the control end of described second switch circuit is used for inputting the second control signal; The conducting when described the second control signal is low level of described second switch circuit, turn-offs when described the second control signal is high level;
The first discharge circuit, comprise input, output and control end, the control end of described the first discharge circuit is connected with the output of described the first switching circuit, the input of described the first discharge circuit connects in described half-bridge circuit the control end of bridge, and the output of described the first discharge circuit connects the common port of Shang Qiao and lower bridge in described half-bridge circuit; Described the first discharge circuit turn-offs when described the first switching circuit conducting, conducting when described the first switching circuit turn-offs;
The second discharge circuit, comprise input, output and control end, the input of described the second discharge circuit connects the control end of lower bridge in described half-bridge circuit, the output head grounding of described the second discharge circuit, the control end of described the second discharge circuit is used for inputting the second control signal, the conducting when described the second control signal is high level of described the second discharge circuit, turn-offs when described the second control signal is low level.
2. half-bridge drive circuit according to claim 1, is characterized in that, described bias unit is the first current-limiting resistance.
3. half-bridge drive circuit according to claim 1, is characterized in that, described the first switching circuit comprises the first switching tube of the first conduction type and the second switch pipe of the second conduction type,
The control end of described the first switching tube is the control end of described the first switching circuit, the output head grounding of described the first switching tube, and the input of described the first switching tube is connected with the control end of described second switch pipe;
Between the control end of described second switch pipe and input, be provided with the first biasing resistor, the output of described second switch pipe is the output of described the first switching circuit, and the input of described second switch pipe is the input of described the first switching circuit;
Described second switch circuit comprises the 3rd switching tube of the first conduction type and the 4th switching tube of the second conduction type,
The output of described the 3rd switching tube is the control end of described second switch circuit, the control end of described the 3rd switching tube is connected with described power access end by the second current-limiting resistance, and the input of described the 3rd switching tube is connected with the control end of described the 4th switching tube;
Between the control end of described the 4th switching tube and input, be provided with the second biasing resistor, the output of described the 4th switching tube is the output of described second switch circuit and is connected with the control end of described lower bridge by the 3rd current-limiting resistance; The input of described the 4th switching tube is the input of described second switch circuit;
Described the first discharge circuit comprises the 5th switching tube of the second conduction type, the control end of described the 5th switching tube is the control end of described the first discharge circuit, the input of described the 5th switching tube is the input of described the first discharge circuit, the output of described the 5th switching tube is the output of described the first discharge circuit, is provided with the 3rd biasing resistor between the output of described the 5th switching tube and control end;
Described the second discharge circuit comprises the 6th switching tube of the first conduction type, the control end of described the 6th switching tube is the control end of described the second discharge circuit, the input of described the 6th switching tube is the input of described the second discharge circuit, and the output of described the 6th switching tube is the output of described the second discharge circuit.
4. half-bridge drive circuit according to claim 3, is characterized in that, described the first discharge circuit comprises and is arranged at the input of described the 5th switching tube and the first discharge capacity between output; Described the second discharge circuit comprises and is arranged at the input of described the 6th switching tube and the second discharge capacity between output.
5. half-bridge drive circuit according to claim 3, is characterized in that, described the first switching circuit comprises decoupling capacitance, and one end of described decoupling capacitance connects described power access end, the other end ground connection of described decoupling capacitance.
6. half-bridge drive circuit according to claim 3, it is characterized in that, described second switch circuit comprises divider resistance and voltage-stabiliser tube, described divider resistance is arranged between described power access end and described the second current-limiting resistance, the negative pole of described voltage-stabiliser tube is connected in the common port of described the second current-limiting resistance and divider resistance, the plus earth of described voltage-stabiliser tube.
7. according to the half-bridge drive circuit described in claim 3 to 6 any one, it is characterized in that, described the first switching circuit comprises the 4th current-limiting resistance and the 5th current-limiting resistance, and described the 4th current-limiting resistance series connection is arranged at the control end of described the first switching tube; Described the 5th current-limiting resistance series connection is arranged at the output of described the first switching tube.
8. according to the half-bridge drive circuit described in claim 3 to 6 any one, it is characterized in that, described second switch circuit comprises the 6th current-limiting resistance and the 7th current-limiting resistance, and described the 6th current-limiting resistance series connection is arranged at the output of described the 3rd switching tube; Described the 7th current-limiting resistance series connection is arranged at the control end of described the 6th switching tube.
9. according to the half-bridge drive circuit described in claim 3 to 6 any one, it is characterized in that, described half-bridge drive circuit comprises the second diode, between the output that described the second diode is arranged on described second switch pipe and described bias unit and the positive pole of described the second diode be connected with the output of described second switch pipe.
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| CN201210334496.7A CN103683872A (en) | 2012-09-11 | 2012-09-11 | Half-bridge driving circuit |
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| CN114237079A (en) * | 2021-09-30 | 2022-03-25 | 宁波三星智能电气有限公司 | Circuit capable of utilizing serial port to turn off power supply |
| CN115118153A (en) * | 2022-06-25 | 2022-09-27 | 北京金诺美科技股份有限公司 | H-bridge driving circuit, driving method and device based on charge pump |
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| CN107078736A (en) * | 2014-10-10 | 2017-08-18 | 宜普电源转换公司 | The QRR of high voltage zero bootstrapping supply |
| CN107078736B (en) * | 2014-10-10 | 2021-01-22 | 宜普电源转换公司 | High voltage zero reverse recovery charge bootstrap provider |
| CN105322948B (en) * | 2015-10-30 | 2018-07-27 | 无锡新洁能股份有限公司 | Half-bridge drive circuit |
| CN105322948A (en) * | 2015-10-30 | 2016-02-10 | 无锡新洁能股份有限公司 | Half-bridge drive circuit |
| CN106330153A (en) * | 2016-08-31 | 2017-01-11 | 四川升华电源科技有限公司 | MOS (Metal Oxide Semiconductor) transistor driving circuit |
| CN106330153B (en) * | 2016-08-31 | 2019-09-10 | 四川升华电源科技有限公司 | A kind of driving circuit of metal-oxide-semiconductor |
| CN107124097A (en) * | 2017-06-29 | 2017-09-01 | 北京新能源汽车股份有限公司 | A kind of safe non-bridge PFC circuits and automobile |
| CN107547031B (en) * | 2017-10-11 | 2023-11-21 | 珠海英搏尔电气股份有限公司 | H-bridge driving circuit of electric vehicle controller, controller and electric vehicle |
| CN107547031A (en) * | 2017-10-11 | 2018-01-05 | 珠海英搏尔电气股份有限公司 | H-bridge drive circuit, controller and the electric car of controller for electric vehicle |
| CN108650726A (en) * | 2018-06-19 | 2018-10-12 | 九阳股份有限公司 | The half-bridge circuit and electromagnetic heater of electromagnetic heater |
| CN110729895A (en) * | 2018-07-16 | 2020-01-24 | 辉芒微电子（深圳）有限公司 | Voltage bootstrap circuit and drive control circuit that full N type MOSFET realized |
| US11735997B2 (en) | 2020-07-28 | 2023-08-22 | Hitachi Power Semiconductor Device, Ltd. | Upper arm drive circuit having a reverse current prevention circuit disposed between a power supply of a power conversion device and a first capacitor and control method thereof |
| CN114237079A (en) * | 2021-09-30 | 2022-03-25 | 宁波三星智能电气有限公司 | Circuit capable of utilizing serial port to turn off power supply |
| CN114237079B (en) * | 2021-09-30 | 2024-04-30 | 宁波三星智能电气有限公司 | Circuit capable of utilizing serial port to turn off power supply |
| CN116031855A (en) * | 2022-05-07 | 2023-04-28 | 芯北电子科技(南京)有限公司 | Vehicle-mounted power supply and automobile power supply device |
| CN116031855B (en) * | 2022-05-07 | 2023-12-05 | 芯北电子科技(南京)有限公司 | Vehicle-mounted power supply and automobile power supply device |
| CN115118153A (en) * | 2022-06-25 | 2022-09-27 | 北京金诺美科技股份有限公司 | H-bridge driving circuit, driving method and device based on charge pump |
| CN115118153B (en) * | 2022-06-25 | 2023-03-24 | 北京金诺美科技股份有限公司 | H-bridge driving circuit, driving method and device based on charge pump |
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