CN203462120U - Rectangular planar magnetron sputtering cathode - Google Patents
Rectangular planar magnetron sputtering cathode Download PDFInfo
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- CN203462120U CN203462120U CN201320527309.7U CN201320527309U CN203462120U CN 203462120 U CN203462120 U CN 203462120U CN 201320527309 U CN201320527309 U CN 201320527309U CN 203462120 U CN203462120 U CN 203462120U
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- magnetron sputtering
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Abstract
The utility model relates to the technical field of magnetron sputtering coating production equipment and particularly discloses a rectangular planar magnetron sputtering cathode. The rectangular planar magnetron sputtering cathode comprises a middle target material pressing bar, a middle pressing bar, edge target material pressing bars, edge pressing bars, a back plate, a cooling plate, a cathode seat, a support block, a magnet yoke, a middle upright pillar, a middle magnet, a middle magnetic shoe, edge magnets, edge magnetic shoes and a target material. The rectangular planar magnetron sputtering cathode is characterized in that the cathode seat which is made from a stainless steel material without the magnetic conductivity is internally provided with the magnet yoke; the magnet yoke which is made from a material with the high magnetic conductivity and the cathode seat are fixed together through a bolt and is also provided with a magnet assembly; the width of the cathode seat is greater than the total span of two edge magnets, and the total span of the target material is greater than that of the edge magnets. Compared with the prior art, the rectangular planar magnetron sputtering cathode has the advantages that the target material is installed to be sputtered for the first time, an etched area is formed in one side of the target material, then the target material is rotated horizontally at 180 degrees and reinstalled on a cathode to be sputtered for the second time, and the two etched areas are connected to form a large etched area, so that the utilization rate of the target material is increased.
Description
[technical field]
The utility model relates to magnetron sputtering membrane production equipment technical field, is a kind of rectangle plane magnetron sputtering cathode specifically.
[background technology]
Magnetron sputtering technique has been widely used in sputter functional membrane, decorating film etc.Magnetron sputtering needs vacuum, therefore magnetron sputtering target need to be placed in vacuum, because magnetron sputtering have " at a high speed ", " low temperature " feature and can be by the thin film deposition of any plating material on any base material, so magnetron sputtering has become the main flow of sputtering technology and has been widely used in during large-area coating film produces.
Conventionally the target surface effective dimensions of rectangle plane magnetron sputtering cathode is suitable with the width of target stand internal magnet.During negative electrode work, process gas generation glow discharge in vacuum chamber, the ion bombardment target ionizing out, pound target material and be deposited on substrate, owing to being subject to the restriction in glow discharge region, the process gas ion ionizing out is limited on the runway of a narrow annular, on corresponding target surface, form a narrow etch areas, carrying out along with glow discharge, target surface etch areas is V-shaped and etch areas is more and more narrower, intensification gradually along with " V " shape groove, it is more violent that etching can become, target be etched very soon " penetrating ", now must change target, therefore the target utilization of rectangle plane negative electrode is very low, generally in 30% left and right.
[utility model content]
The purpose of this utility model is to provide a kind of novel structure, can effectively solve a kind of rectangle plane magnetron sputtering cathode of the problems such as the target utilization of rectangle plane negative electrode is very low.
For achieving the above object, design a kind of rectangle plane magnetron sputtering cathode, comprise middle target press strip 1, middle press strip 2, limit target press strip 3, limit press strip 4, backboard 5, cooling plate 6, cathode block 7, back-up block 8, yoke 9, central post 10, middle magnet 11, middle magnetic boots 12, limit magnet 13, limit magnetic boots 14 and target 15, it is characterized in that cathode block 7 is for non-magnetic stainless material, in cathode block, be provided with yoke 9, yoke 9 is high permeability material and is fixed together by bolt and cathode block 7, yoke 9 is provided with magnet assemblies, described magnet assemblies comprises four row magnet, middle magnet is classified at middle part two as, polarity is identical, both sides are limit magnet, and polarity is identical, and middle magnet is contrary with limit magnet polarity, magnet top is provided with magnetic boots, and magnet assemblies top is provided with cooling plate, and cooling plate top is provided with backboard, and backboard top is provided with target, and described cathode block 7 width are greater than the total span of dual-side magnet, and the total span of target is greater than the total span of limit magnet.
The width of described cathode block is greater than 1.5 times of total span of dual-side magnet, and the total span of target 15 is greater than 1.5 times of limit magnet 14 total spans.
The material of described cooling plate 6 is copper.
In described two, between magnet, be provided with central post, between both sides magnet and cathode block 7, be respectively equipped with back-up block, the mid-way of cooling plate 6 is supported by central post 10, and both sides are supported by back-up block 8 and cathode block 7 respectively.
Press strip 2 and limit press strip 4 in described backboard 5 tops installations.
Described negative electrode can allow target to horizontally rotate 180 ° of installations, and after rotation, primary etch areas is removed.
Between described cooling plate 6, middle press strip 2 and limit press strip 4, backboard 5, central post 10, be bolted on cathode block 7 and the fastening force by bolt compresses sealing material, back-up block 8, backboard 5, cooling plate 6 compress by bolted together and sealing material, form the sealing to cooling-water duct.
The utility model compared with the existing technology, after target is installed for the first time, through sputter, etch areas is positioned at a side of target, then target being horizontally rotated to 180 ° is reinstalled on negative electrode again, carry out sputter for the second time, make the etch areas of twice just connect into a larger etch areas, thereby improve the utilization ratio of target.
[accompanying drawing explanation]
Fig. 1 is sectional view of the present utility model;
As shown in the figure, in figure: 1. magnetic boots 13. limit magnet 14. limit magnetic boots 15. targets in magnet 12. in press strip 3. limit target press strip 4. limit press strip 5. backboard 6. cooling plate 7. cathode block 8. back-up block 9. yoke 10. central posts 11. in target press strip 2. in.
[embodiment]
Below in conjunction with accompanying drawing, the utility model is described in further detail, and the structure of this device and principle are very clearly concerning this professional people.
Embodiment 1
As shown in Figure 1, rectangle plane magnetron sputtering cathode comprises middle target press strip 1, middle press strip 2, limit target press strip 3, limit press strip 4, backboard 5, cooling plate 6, cathode block 7, back-up block 8, yoke 9, central post 10, middle magnet 11, middle magnetic boots 12, limit magnet 13, limit magnetic boots 14 and target 15, cathode block 7 is non-magnetic stainless material, in cathode block, be provided with yoke 9, yoke 9 is high permeability material and is fixed together by bolt and cathode block 7, yoke 9 is provided with magnet assemblies, magnet assemblies comprises four row magnet, middle magnet is classified at middle part two as, and polarity is identical; Both sides are limit magnet, and polarity is identical, and middle magnet is contrary with limit magnet polarity; Magnet top is provided with magnetic boots, magnet assemblies top is provided with cooling plate, cooling plate top is provided with backboard, backboard top is provided with target, press strip 2 and limit press strip 4 in backboard 5 tops installations, the width of cathode block is greater than 1.5 times of total span of dual-side magnet, and the total span of target 15 is greater than 1.5 times of limit magnet 14 total spans.Negative electrode can allow target to horizontally rotate 180 ° of installations, and after rotation, primary etch areas is removed.
In two, between magnet, be provided with central post, between both sides magnet and cathode block 7, be respectively equipped with back-up block, the mid-way of cooling plate 6 is supported by central post 10, and both sides are supported by back-up block 8 and cathode block 7 respectively.
Between cooling plate 6, middle press strip 2 and limit press strip 4, backboard 5, central post 10, be bolted on cathode block 7 and the fastening force by bolt compresses sealing material, back-up block 8, backboard 5, cooling plate 6 compress by bolted together and sealing material, the sealing of formation to cooling-water duct, the material of cooling plate 6 is copper.
Claims (7)
1. a rectangle plane magnetron sputtering cathode, comprise middle target press strip (1), middle press strip (2), limit target press strip (3), limit press strip (4), backboard (5), cooling plate (6), cathode block (7), back-up block (8), yoke (9), central post (10), middle magnet (11), middle magnetic boots (12), limit magnet (13), limit magnetic boots (14) and target (15), it is characterized in that cathode block (7) is non-magnetic stainless material, in cathode block, be provided with yoke (9), yoke (9) is high permeability material and is fixed together by bolt and cathode block (7), yoke (9) is provided with magnet assemblies, described magnet assemblies comprises four row magnet, middle magnet is classified at middle part two as, polarity is identical, both sides are limit magnet, and polarity is identical, and middle magnet is contrary with limit magnet polarity, magnet top is provided with magnetic boots, and magnet assemblies top is provided with cooling plate, and cooling plate top is provided with backboard, and backboard top is provided with target, and described cathode block (7) width is greater than the total span of dual-side magnet, and the total span of target is greater than the total span of limit magnet.
2. a kind of rectangle plane magnetron sputtering cathode as claimed in claim 1, the width that it is characterized in that described cathode block is greater than 1.5 times of total span of dual-side magnet, and the total span of target (15) is greater than 1.5 times of limit magnet (13) total span.
3. a kind of rectangle plane magnetron sputtering cathode as claimed in claim 1, is characterized in that the material of described cooling plate (6) is copper.
4. a kind of rectangle plane magnetron sputtering cathode as claimed in claim 1, it is characterized in that between magnet, being provided with in two central post (10), between both sides magnet and cathode block (7), be respectively equipped with back-up block (8), the mid-way of cooling plate (6) is supported by central post (10), and both sides are supported by back-up block (8) and cathode block (7) respectively.
5. a kind of rectangle plane magnetron sputtering cathode as claimed in claim 1, is characterized in that press strip (2) and limit press strip (4) in described backboard (5) top installation.
6. a kind of rectangle plane magnetron sputtering cathode as claimed in claim 1, is characterized in that described negative electrode can allow target to horizontally rotate 180 ° of installations, and after rotation, primary etch areas is removed.
7. a kind of rectangle plane magnetron sputtering cathode as claimed in claim 1, it is characterized in that being bolted between described cooling plate 6, middle press strip (2) and limit press strip (4), backboard (5), central post (10) on cathode block 7 and the fastening force by bolt compresses sealing material, back-up block (8), backboard (5), cooling plate (6) compress by bolted together and sealing material, form the sealing to cooling-water duct.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320527309.7U CN203462120U (en) | 2013-08-27 | 2013-08-27 | Rectangular planar magnetron sputtering cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320527309.7U CN203462120U (en) | 2013-08-27 | 2013-08-27 | Rectangular planar magnetron sputtering cathode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203462120U true CN203462120U (en) | 2014-03-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320527309.7U Expired - Lifetime CN203462120U (en) | 2013-08-27 | 2013-08-27 | Rectangular planar magnetron sputtering cathode |
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| Country | Link |
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| CN (1) | CN203462120U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103602953A (en) * | 2013-08-27 | 2014-02-26 | 中国建材国际工程集团有限公司 | Rectangle plane magnetron sputtering cathode |
| CN108220899A (en) * | 2018-01-02 | 2018-06-29 | 京东方科技集团股份有限公司 | A kind of sputtering equipment |
-
2013
- 2013-08-27 CN CN201320527309.7U patent/CN203462120U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103602953A (en) * | 2013-08-27 | 2014-02-26 | 中国建材国际工程集团有限公司 | Rectangle plane magnetron sputtering cathode |
| CN108220899A (en) * | 2018-01-02 | 2018-06-29 | 京东方科技集团股份有限公司 | A kind of sputtering equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210106 Address after: No.1047 Tushan Road, Bengbu City, Anhui Province 233000 Patentee after: CHINA BUILDING MATERIALS BENGBU GLASS INDUSTRY DESIGN & RESEARCH INSTITUTE Co.,Ltd. Address before: 27th floor, Zhongji building, 2000 Zhongshan North Road, Putuo District, Shanghai Patentee before: China Triumph International Engineering Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140305 |
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| CX01 | Expiry of patent term |