CN103602953A - Rectangle plane magnetron sputtering cathode - Google Patents
Rectangle plane magnetron sputtering cathode Download PDFInfo
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- CN103602953A CN103602953A CN201310379659.8A CN201310379659A CN103602953A CN 103602953 A CN103602953 A CN 103602953A CN 201310379659 A CN201310379659 A CN 201310379659A CN 103602953 A CN103602953 A CN 103602953A
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Abstract
The invention relates to the technical field of magnetron sputtering coating production equipment, and particularly relates to a rectangle plane magnetron sputtering cathode. The magnetron sputtering cathode comprises a middle target material depression bar, a middle depression bar, border target material depression bars, border depression bars, a backboard, a cooling plate, a cathode base, supporting blocks, magnet yokes, a center pillar, middle magnets, border magnets, border magnetic boots and a target material. The magnetron sputtering cathode is characterized in that the cathode base is made of a stainless steel material, the magnet yokes are disposed in the cathode base, the magnet yokes are made of a high-permeability material and are fixed to the cathode base through bolts, the magnet yokes are provided with magnet components, the width of the cathode base is larger than the total span of the border magnets, and the total span of the target material is larger than the total span of the border magnets. Compared with the prior art, after the target material is installed for the first time, and through sputtering, an etching zone is located in one side of the target material. Then the target material is rotated 180 degrees horizontally and installed on the cathode again to perform the second sputtering so that the etching zones of the two times are connected into a larger etching zone, thus improving the utilization rate of the target material.
Description
[technical field]
The present invention relates to magnetron sputtering membrane production equipment technical field, is a kind of rectangle plane magnetron sputtering cathode specifically.
[background technology]
Magnetron sputtering technique has been widely used in sputter functional membrane, decorating film etc.Magnetron sputtering needs vacuum, therefore magnetron sputtering target need to be placed in vacuum, because magnetron sputtering have " at a high speed ", " low temperature " feature and can be by the thin film deposition of any plating material on any base material, so magnetron sputtering has become the main flow of sputtering technology and has been widely used in during large-area coating film produces.
Conventionally the target surface effective dimensions of rectangle plane magnetron sputtering cathode is suitable with the width of target stand internal magnet.During negative electrode work, process gas generation glow discharge in vacuum chamber, the ion bombardment target ionizing out, pound target material and be deposited on substrate, owing to being subject to the restriction in glow discharge region, the process gas ion ionizing out is limited on the runway of a narrow annular, on corresponding target surface, form a narrow etch areas, carrying out along with glow discharge, target surface etch areas is V-shaped and etch areas is more and more narrower, intensification gradually along with " V " shape groove, it is more violent that etching can become, target be etched very soon " penetrating ", now must change target, therefore the target utilization of rectangle plane negative electrode is very low, generally in 30% left and right.
[summary of the invention]
The object of this invention is to provide a kind of novel structure, can effectively solve a kind of rectangle plane magnetron sputtering cathode of the problems such as the target utilization of rectangle plane negative electrode is very low.
For achieving the above object, design a kind of rectangle plane magnetron sputtering cathode, comprise middle target press strip 1, middle press strip 2, limit target press strip 3, limit press strip 4, backboard 5, cooling plate 6, cathode block 7, back-up block 8, yoke 9, central post 10, middle magnet 11, middle magnetic boots 12, limit magnet 13, limit magnetic boots 14 and target 15, it is characterized in that cathode block 7 is for non-magnetic stainless material, in cathode block, be provided with yoke 9, yoke 9 is high permeability material and is fixed together by bolt and cathode block 7, yoke 9 is provided with magnet assemblies, described magnet assemblies comprises four row magnet, middle magnet is classified at middle part two as, polarity is identical, both sides are limit magnet, and polarity is identical, and middle magnet is contrary with limit magnet polarity, magnet top is provided with magnetic boots, and magnet assemblies top is provided with cooling plate, and cooling plate top is provided with backboard, and backboard top is provided with target, and described cathode block 7 width are greater than the total span of dual-side magnet, and the total span of target is greater than the total span of limit magnet.
The width of described cathode block is greater than 1.5 times of total span of dual-side magnet, and the total span of target 15 is greater than 1.5 times of limit magnet 14 total spans.
The material of described cooling plate 6 is copper.
In described two, between magnet, be provided with central post, between both sides magnet and cathode block 7, be respectively equipped with back-up block, the mid-way of cooling plate 6 is supported by central post 10, and both sides are supported by back-up block 8 and cathode block 7 respectively.
Press strip 2 and limit press strip 4 in described backboard 5 tops installations.
Described negative electrode can allow target to horizontally rotate 180 ° of installations, and after rotation, primary etch areas is removed.
Between described cooling plate 6, middle press strip 2 and limit press strip 4, backboard 5, central post 10, be bolted on cathode block 7 and the fastening force by bolt compresses sealing material, back-up block 8, backboard 5, cooling plate 6 compress by bolted together and sealing material, form the sealing to cooling-water duct.
The present invention compared with the existing technology, after target is installed for the first time, through sputter, etch areas is positioned at a side of target, then target being horizontally rotated to 180 ° is reinstalled on negative electrode again, carry out sputter for the second time, make the etch areas of twice just connect into a larger etch areas, thereby improve the utilization ratio of target.
[accompanying drawing explanation]
Fig. 1 is sectional view of the present invention;
As shown in the figure, in figure: 1. magnetic boots 13. limit magnet 14. limit magnetic boots 15. targets in magnet 12. in press strip 3. limit target press strip 4. limit press strip 5. backboard 6. cooling plate 7. cathode block 8. back-up block 9. yoke 10. central posts 11. in target press strip 2. in.
[embodiment]
Below in conjunction with accompanying drawing, the invention will be further described, and the structure of this device and principle are very clearly concerning this professional people.
Embodiment 1
As shown in Figure 1, rectangle plane magnetron sputtering cathode comprises middle target press strip 1, middle press strip 2, limit target press strip 3, limit press strip 4, backboard 5, cooling plate 6, cathode block 7, back-up block 8, yoke 9, central post 10, middle magnet 11, middle magnetic boots 12, limit magnet 13, limit magnetic boots 14 and target 15, cathode block 7 is non-magnetic stainless material, in cathode block, be provided with yoke 9, yoke 9 is high permeability material and is fixed together by bolt and cathode block 7, yoke 9 is provided with magnet assemblies, magnet assemblies comprises four row magnet, middle magnet is classified at middle part two as, and polarity is identical; Both sides are limit magnet, and polarity is identical, and middle magnet is contrary with limit magnet polarity; Magnet top is provided with magnetic boots, magnet assemblies top is provided with cooling plate, cooling plate top is provided with backboard, backboard top is provided with target, press strip 2 and limit press strip 4 in backboard 5 tops installations, the width of cathode block is greater than 1.5 times of total span of dual-side magnet, and the total span of target 15 is greater than 1.5 times of limit magnet 14 total spans.Negative electrode can allow target to horizontally rotate 180 ° of installations, and after rotation, primary etch areas is removed.
In two, between magnet, be provided with central post, between both sides magnet and cathode block 7, be respectively equipped with back-up block, the mid-way of cooling plate 6 is supported by central post 10, and both sides are supported by back-up block 8 and cathode block 7 respectively.
Between cooling plate 6, middle press strip 2 and limit press strip 4, backboard 5, central post 10, be bolted on cathode block 7 and the fastening force by bolt compresses sealing material, back-up block 8, backboard 5, cooling plate 6 compress by bolted together and sealing material, the sealing of formation to cooling-water duct, the material of cooling plate 6 is copper.
Embodiment 2
Rectangle plane magnetron sputtering cathode detailed process is after target is installed for the first time, through sputter, etch areas is positioned at a side of target, then target being horizontally rotated to 180 ° is reinstalled on negative electrode again, carry out sputter for the second time, target is fastened on negative electrode by target press strip, and the heat producing during sputter is passed to water coolant by backboard and takes away, the etch areas of twice connects into a larger etch areas just, thereby improves the utilization ratio of target.
Claims (7)
1. a rectangle plane magnetron sputtering cathode, comprise middle target press strip (1), middle press strip (2), limit target press strip (3), limit press strip (4), backboard (5), cooling plate (6), cathode block (7), back-up block (8), yoke (9), central post (10), middle magnet (11), middle magnetic boots (12), limit magnet (13), limit magnetic boots (14) and target (15), it is characterized in that cathode block (7) is non-magnetic stainless material, in cathode block, be provided with yoke (9), yoke (9) is high permeability material and is fixed together by bolt and cathode block (7), yoke (9) is provided with magnet assemblies, described magnet assemblies comprises four row magnet, middle magnet is classified at middle part two as, polarity is identical, both sides are limit magnet, and polarity is identical, and middle magnet is contrary with limit magnet polarity, magnet top is provided with magnetic boots, and magnet assemblies top is provided with cooling plate, and cooling plate top is provided with backboard, and backboard top is provided with target, and described cathode block (7) width is greater than the total span of dual-side magnet, and the total span of target is greater than the total span of limit magnet.
2. a kind of rectangle plane magnetron sputtering cathode as claimed in claim 1, the width that it is characterized in that described cathode block is greater than 1.5 times of total span of dual-side magnet, and the total span of target (15) is greater than 1.5 times of limit magnet (13) total span.
3. a kind of rectangle plane magnetron sputtering cathode as claimed in claim 1, is characterized in that the material of described cooling plate (6) is copper.
4. a kind of rectangle plane magnetron sputtering cathode as claimed in claim 1, in described in it is characterized in that two, between magnet, be provided with central post (10), between both sides magnet and cathode block (7), be respectively equipped with back-up block (8), the mid-way of cooling plate (6) is supported by central post (10), and both sides are supported by back-up block (8) and cathode block (7) respectively.
5. a kind of rectangle plane magnetron sputtering cathode as claimed in claim 1, is characterized in that press strip (2) and limit press strip (4) in described backboard (5) top installation.
6. a kind of rectangle plane magnetron sputtering cathode as claimed in claim 1, is characterized in that described negative electrode can allow target to horizontally rotate 180 ° of installations, and after rotation, primary etch areas is removed.
7. a kind of rectangle plane magnetron sputtering cathode as claimed in claim 1, it is characterized in that being bolted between described cooling plate 6, middle press strip (2) and limit press strip (4), backboard (5), central post (10) on cathode block 7 and the fastening force by bolt compresses sealing material, back-up block (8), backboard (5), cooling plate (6) compress by bolted together and sealing material, form the sealing to cooling-water duct.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310379659.8A CN103602953A (en) | 2013-08-27 | 2013-08-27 | Rectangle plane magnetron sputtering cathode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310379659.8A CN103602953A (en) | 2013-08-27 | 2013-08-27 | Rectangle plane magnetron sputtering cathode |
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| CN103602953A true CN103602953A (en) | 2014-02-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310379659.8A Pending CN103602953A (en) | 2013-08-27 | 2013-08-27 | Rectangle plane magnetron sputtering cathode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105779952A (en) * | 2014-12-24 | 2016-07-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron assembly and magnetron sputtering equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101250687A (en) * | 2008-03-26 | 2008-08-27 | 合肥工业大学 | Rectangle plane magnetron sputtering cathode |
| CN102122599A (en) * | 2010-01-08 | 2011-07-13 | 郭信生 | Substrate processing system and substrate processing method |
| CN203462120U (en) * | 2013-08-27 | 2014-03-05 | 中国建材国际工程集团有限公司 | Rectangular planar magnetron sputtering cathode |
-
2013
- 2013-08-27 CN CN201310379659.8A patent/CN103602953A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101250687A (en) * | 2008-03-26 | 2008-08-27 | 合肥工业大学 | Rectangle plane magnetron sputtering cathode |
| CN102122599A (en) * | 2010-01-08 | 2011-07-13 | 郭信生 | Substrate processing system and substrate processing method |
| CN203462120U (en) * | 2013-08-27 | 2014-03-05 | 中国建材国际工程集团有限公司 | Rectangular planar magnetron sputtering cathode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105779952A (en) * | 2014-12-24 | 2016-07-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron assembly and magnetron sputtering equipment |
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Application publication date: 20140226 |