CN202651611U - Semiconductor pumped all-solid-state laser marking machine - Google Patents
Semiconductor pumped all-solid-state laser marking machine Download PDFInfo
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- CN202651611U CN202651611U CN 201220276813 CN201220276813U CN202651611U CN 202651611 U CN202651611 U CN 202651611U CN 201220276813 CN201220276813 CN 201220276813 CN 201220276813 U CN201220276813 U CN 201220276813U CN 202651611 U CN202651611 U CN 202651611U
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- linear frequency
- doubling crystal
- frequency multiplication
- marking
- laser
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Abstract
The utility model relates to a semiconductor pumped all-solid-state laser marking machine which is characterized in that a non-linear frequency multiplication crystal is arranged on a non-linear frequency multiplication crystal base, a driver controls the non-linear frequency multiplication crystal to insert in or break away from the light path of an infrared pulse laser, the non-linear frequency multiplication crystal and the driver are fixed on the substrate, and the outer-cavity frequency multiplication indicating light is green. When a marking preview is needed, the non-linear frequency multiplication crystal is inserted into the light path to generate the weak output of visible optical bands, namely, the indicating light for marking is formed, meanwhile, the non-linear frequency multiplication crystal can prevent the output of the pulse laser for marking, thereby achieving the aim of previewing the marking area in the premise of safety.
Description
Technical field
The utility model relates to a kind of novel pilot light of semiconductor pumped all-solid state laser marking machine, belongs to the laser application.
Background technology
The laser marking technology is one of application of laser processing maximum.Laser marking is to utilize the laser of high-energy-density that workpiece is carried out local irradiation, makes the chemical reaction of skin-material vaporization or generation change color, thereby stays a kind of marking method of permanent marker.Laser marking can be got various literal, symbol and pattern etc., and character boundary can be from the millimeter to the micron dimension.
Superfine laser beam after the focusing can be removed the pointwise of body surface material as cutter, and its advance is that labeling process is untouchable processing, does not produce mechanical presses or mechanical stress, therefore can not damage machined article; Because small-sized behind the Laser Focusing, the heat-affected zone is little, processes meticulously, therefore, can finish the technique that some conventional methods can't realize.
" cutter " that laser processing is used is the luminous point after focusing on, and do not need additionally to increase miscellaneous equipment and material, as long as laser can work, and just can long-time continuous processing.Laser processing speed is fast, and is with low cost.Laser processing does not need human intervention by computer controlled automatic during production.Which kind of information of laser energy mark, only relevant with the content that designs in the computer, as long as the picture proof marking system of designing in the computer can be identified, marking machine just can reduce design information on suitable carrier accurately so.Therefore the function of software has determined the function of system in fact to a great extent.
And because laser index carving permanent, need to confirm accurately scope and the position of marking before the marking, this just needs to guide with pilot light before the marking, indicate scope and the focal plane of marking, so that to by the marking object without any damage in, will be placed on accurately on the locus by the marking object accurately.Traditional pilot light adopts the semiconductor laser of red spectral band, this need to carry out two light compositings from closing mating plate with the position utilization of laser vertical with pilot light, its drawback has three, the one semiconductor laser is different with the initial angle of divergence of pulse laser from mark, needing could be with the focal adjustments of two different wavelength to same plane and eliminate aberration through complicated optical system, it two closes mating plate and needs 45 degree to place, can't accomplish completely transmission to the laser that mark is used, namely can the loss part energy, its three transmission and reverberation that closes mating plate can incide indication with in the semiconductor red light laser, very easily cause the damage of pilot light, increase the failure rate of product.
Summary of the invention
The purpose of this utility model is to provide a kind of novel pilot light of semiconductor pumped all-solid state laser marking machine, the light path of namely exporting at the pulse laser of laser marking machine adds one for the non-linear frequency-doubling crystal of mark optical maser wavelength, under the control of driver, in the time of needs mark preview, insert light path, produce the faint output of visible light wave range, namely form the pilot light that mark is used, can stop simultaneously the mark output of pulse laser, reach under the prerequisite of safety the purpose in preview mark zone.
The technical solution of the utility model is achieved in that a kind of semiconductor pumped all-solid state laser marking machine, by substrate, and shell, the pulsed infrared laser device, non-linear frequency-doubling crystal, non-linear frequency-doubling crystal seat and driver composition cover in the shell; It is characterized in that: non-linear frequency-doubling crystal is installed in non-linear frequency-doubling crystal seat, in the light path of pulsed infrared laser device, insert or break away from by the non-linear frequency-doubling crystal of driver control, non-linear frequency-doubling crystal seat and driver are fixed on the substrate, and the cavity external frequency multiplication pilot light is green glow.
Described non-linear frequency-doubling crystal is near the end plating anti-reflection film system of pulsed infrared laser device, other end plating anti-reflection film system and high reflectivity film stack.
Good effect of the present utility model is: one, the complete coaxial output of pilot light and pulsed infrared laser, can be more the accurate zone of errorless indication laser marking, position and focal plane; Its two, the existence of not closing mating plate eliminated unnecessary power and the energy loss of pulsed infrared laser, the product percent of pass of having avoided pilot light to damage causing reduces; Its three so that the indication light wavelength more close to the most responsive zone of human eye, indicating effect is more accurate.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model is further described, as shown in Figure 1, a kind of semiconductor pumped all-solid state laser marking machine, by substrate 1, shell 2, pulsed infrared laser device 3, non-linear frequency-doubling crystal 4, non-linear frequency-doubling crystal seat 5 and driver 6 compositions cover in the shell 2; It is characterized in that: non-linear frequency-doubling crystal 4 is installed in non-linear frequency-doubling crystal seat 5, in the light path of pulsed infrared laser device 3, insert or break away from by the non-linear frequency-doubling crystal 4 of driver 6 control, non-linear frequency-doubling crystal seat 5 and driver 6 are fixed on the substrate 1, the cavity external frequency multiplication pilot light is green glow, non-linear frequency-doubling crystal 4 is near the end plating anti-reflection film system of pulsed infrared laser device 3, other end plating anti-reflection film system and high reflectivity film stack.
Be λ 1 as establishing the pulsed infrared laser wavelength during work, when needs pilot light preview mark scope and pattern, the non-linear frequency-doubling crystal 4 of driver 6 controls inserts in the light path, non-linear frequency-doubling crystal 4 is by the multiple frequency phase matching direction cutting of the long λ 1 of fundamental light wave, so that wavelength X 1 satisfies phase matched relation: n2/ λ 2=n1/ λ 1+n1/ λ 1 when conllinear is propagated in non-linear frequency-doubling crystal 4, n1 wherein, n2 is respectively λ 1, the refractive index the when light of λ 2 wavelength is propagated in non-linear frequency-doubling crystal 4.And the anti-reflection film system of end plating λ 1 wavelength of non-linear frequency-doubling crystal 4 close pulsed infrared laser devices 3, the anti-reflection film system of other end plating λ 2 wavelength and the high reflectivity film stack of λ 1 wavelength; Complete and be placed to correct position by the marking object and fixedly the time when preview, the non-linear frequency-doubling crystal 4 disengaging light paths of driver 6 controls, the pulsed infrared laser device is normally exported pulse laser and is carried out the mark operation.
Take the 532nm pilot light of realizing all solid state 1064nm laser marking machine of pumped at end face of semiconductor as example, the pulse laser output wavelength is the pulse laser of 1064nm, when needing preview before the mark, the non-linear frequency-doubling crystal KTP of driver control inserts light path, and KTP is of a size of 2*2*2mm
3Cutting angle is θ=90 °, φ=23.4 °, KTP is near the end plating 1064nm anti-reflection film of pulse laser, other end plating 1064nm high-reflecting film and 532nm anti-reflection film, the green glow that cavity external frequency multiplication produces can be used as pilot light, zone and the position of indication mark, and determine the position of focal plane according to the size of green glow focus, put into mark object and fixing according to pilot light, the non-linear frequency-doubling crystal KTP of driver control this moment leaves light path, carries out mark.
Claims (2)
1. semiconductor pumped all-solid state laser marking machine, by substrate, shell, pulsed infrared laser device, non-linear frequency-doubling crystal, non-linear frequency-doubling crystal seat and driver form and cover in the shell; It is characterized in that: non-linear frequency-doubling crystal is installed on the non-linear frequency-doubling crystal seat, in the light path of pulsed infrared laser device, insert or break away from by the non-linear frequency-doubling crystal of driver control, non-linear frequency-doubling crystal seat and driver are fixed on the substrate, and the cavity external frequency multiplication pilot light is green glow.
2. a kind of semiconductor pumped all-solid state laser marking machine according to claim 1 is characterized in that described non-linear frequency-doubling crystal is near the end plating anti-reflection film system of pulsed infrared laser device, other end plating anti-reflection film system and high reflectivity film stack.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220276813 CN202651611U (en) | 2012-06-13 | 2012-06-13 | Semiconductor pumped all-solid-state laser marking machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220276813 CN202651611U (en) | 2012-06-13 | 2012-06-13 | Semiconductor pumped all-solid-state laser marking machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202651611U true CN202651611U (en) | 2013-01-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220276813 Expired - Fee Related CN202651611U (en) | 2012-06-13 | 2012-06-13 | Semiconductor pumped all-solid-state laser marking machine |
Country Status (1)
| Country | Link |
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| CN (1) | CN202651611U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104216197A (en) * | 2014-09-19 | 2014-12-17 | 福建中科光汇激光科技有限公司 | Indicating light generation device for optical fiber laser |
| CN105633782A (en) * | 2016-03-25 | 2016-06-01 | 西北核技术研究所 | Additional visible light indicating device for invisible laser |
| CN105914576A (en) * | 2016-05-30 | 2016-08-31 | 深圳市创鑫激光股份有限公司 | Laser |
| CN110346956A (en) * | 2019-06-26 | 2019-10-18 | 深圳市华星光电技术有限公司 | The side stamp structure and code printing method of liquid crystal display panel ultra-narrow frame |
-
2012
- 2012-06-13 CN CN 201220276813 patent/CN202651611U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104216197A (en) * | 2014-09-19 | 2014-12-17 | 福建中科光汇激光科技有限公司 | Indicating light generation device for optical fiber laser |
| CN105633782A (en) * | 2016-03-25 | 2016-06-01 | 西北核技术研究所 | Additional visible light indicating device for invisible laser |
| CN105633782B (en) * | 2016-03-25 | 2018-08-31 | 西北核技术研究所 | The additional visible light instruction device of invisible laser |
| CN105914576A (en) * | 2016-05-30 | 2016-08-31 | 深圳市创鑫激光股份有限公司 | Laser |
| CN110346956A (en) * | 2019-06-26 | 2019-10-18 | 深圳市华星光电技术有限公司 | The side stamp structure and code printing method of liquid crystal display panel ultra-narrow frame |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Jilin Radium Division Light Electrical and Mechanical Equipment Co.,Ltd. Assignor: Changchun New Industries Photoelectric Technology Co., Ltd. Contract record no.: 2015220000015 Denomination of utility model: Semiconductor pumped all-solid-state laser marking machine Granted publication date: 20130102 License type: Exclusive License Record date: 20150526 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130102 Termination date: 20200613 |