CN202585324U - Plasma processing device, gathering device and electrostatic chuck thereof - Google Patents
Plasma processing device, gathering device and electrostatic chuck thereof Download PDFInfo
- Publication number
- CN202585324U CN202585324U CN 201120569756 CN201120569756U CN202585324U CN 202585324 U CN202585324 U CN 202585324U CN 201120569756 CN201120569756 CN 201120569756 CN 201120569756 U CN201120569756 U CN 201120569756U CN 202585324 U CN202585324 U CN 202585324U
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- substrate
- electrostatic chuck
- plasma processing
- converging device
- processing apparatus
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Abstract
The utility model provides a plasma processing device, a gathering device and an electrostatic chuck thereof. The gathering device at least comprises a disk-shaped first portion provided with a first surface capable of being combined with the surface of an electrostatic chuck, and a second surface capable of being combined with the lower surface of a substrate; and a fence-shaped second portion arranged vertical to the first portion and connected with the periphery of the first portion. The area of the first portion is larger than the area of the substrate, while the height of the second portion is greater than the thickness of the substrate. The utility model also provides an electrostatic chuck integrated with the above the gathering device and can effectively improve the consistency of the manufacture process.
Description
Technical field
The utility model relates to field of semiconductor manufacture, relates in particular to a kind of plasma processing apparatus and converging device thereof, electrostatic chuck
Background technology
The edge effect of semiconductor arts piece is a problem of puzzlement semiconductor industry.The edge effect of so-called semiconductor arts piece is meant in plasma treatment procedure; Because plasma receives electric field controls; And the field intensity of the two poles of the earth edge can receive the influence of rim condition up and down; Total some electric field line is crooked, and causes electric field marginal portion field intensity uneven, and then causes the plasma density of this part inhomogeneous.Under this kind situation, also exist a circle to handle uneven zone around the semiconductor arts piece of producing.This non-uniform phenomenon is obvious more when the rf electric field frequency is high more, has been difficult to regulate and control with other device as the gathering ring that is positioned at the electrostatic chuck edge in the inhomogeneities degree of rf frequency this plasma concentration during greater than 60MHZ even greater than 100Mhz again.
Because semiconductor arts piece is circular, therefore more the outer ring area is bigger, and the not good rate of finished products that will cause of the homogeneity of each process procedure of marginal portion significantly descends.In the today of generally adopting the 300mm processing procedure, the loss that the semiconductor arts piece edge effect brings is more huge.
Therefore, need in the industry to improve edge effect simply and effectively, improve the processing procedure homogeneity.
The utility model content
To the problems referred to above in the background technology, the utility model provides the converging device that is used for plasma processing apparatus and the electrostatic chuck that can improve homogeneity.Converging device is arranged at the upper surface of electrostatic chuck; Said converging device top also carries substrate; Wherein, Said converging device comprises at least: plate-like first, and it has the first surface that can combine with the surface of said electrostatic chuck, and has the second surface that combines with the lower surface of said substrate; Enclose the shape second portion, it is provided with said first is vertical, and is connected in the periphery of said first, and wherein, the area of said first is greater than the area of said substrate, and the height of said second portion is greater than the thickness of said substrate.Converging device adopts metallic aluminium or alumina ceramic material to process.
The thickness of first is 1mm～5mm, and the height of said second portion is 1cm～3cm.First is provided with several can be through the passage of elevate a turnable ladder thimble, and said elevate a turnable ladder thimble carries out elevate a turnable ladder through said passage to substrate.
A kind of electrostatic chuck that is applied to plasma processing apparatus is characterized in that, said electrostatic chuck comprises: first dielectric layer; Second dielectric layer; It is positioned at said first dielectric layer top; And be embedded with the electrode that is used to produce electrostatic attraction, wherein, said second dielectric layer comprises at least: the plate-like third part; It has the first surface that can combine with the surface of electrostatic chuck basal disc, and has the second surface that combines with the lower surface of said substrate; Enclose shape the 4th part, it is provided with said third part is vertical, and is connected in the periphery of said third part, and wherein, the area of said third part is greater than the area of said substrate, and said tetrameric height is greater than the thickness of said substrate.Wherein said second dielectric layer adopts aluminium or pottery to process, and pottery can be materials such as aluminium oxide, yittrium oxide.The thickness of said third part can be 1mm～5mm, and said tetrameric height can be 1cm～3cm.
The converging device that the utility model provides and the plasma processing apparatus of electrostatic chuck can improve edge effect simply and effectively, improve the processing procedure homogeneity.
Description of drawings
Fig. 1 is the structural representation of the plasma processing apparatus of prior art;
Fig. 2 is the structural representation of plasma converging device of plasma processing apparatus of the specific embodiment of the utility model;
Fig. 3 is the vertical view of plasma converging device of plasma processing apparatus of the specific embodiment of the utility model;
Fig. 4 is the structural representation of electrostatic chuck of plasma processing apparatus of the specific embodiment of the utility model;
Fig. 5 is the vertical view of electrostatic chuck of plasma processing apparatus of the specific embodiment of the utility model;
Fig. 6 is the utility model utility model effect sketch map.
Embodiment
Below in conjunction with accompanying drawing, the embodiment of the utility model is described.
See also Fig. 1, Fig. 1 is the structural representation of the plasma processing apparatus of prior art.Plasma processing apparatus 1 as shown in the figure has a process chambers (not shown), and process chambers is essentially cylindricality, and process chambers sidewall perpendicular, has the top electrode (not shown) and the bottom electrode 13 that are arranged in parallel in the process chambers.Usually, the zone between top electrode and bottom electrode 13 is a processing region, and this zone will form high-frequency energy to light and to keep plasma.Above bottom electrode 13, be provided with electrostatic chuck, electrostatic chuck comprises at least buying in first dielectric layer 14 and second dielectric layer, 11, the second dielectric layers and is provided with DC electrode 12 that it is used to produce the electrostatic attraction of clamping substrate W.Place on the electrostatic chuck and remain the substrate W that will process, this substrate W treats to want the semiconductor chip of etching or processing perhaps to treat to be processed into the glass plate of flat-panel monitor.Reacting gas is input in the process chambers from the gas source (not shown); One or more radio-frequency power supplies 15 can be applied on the bottom electrode 13 individually or be applied to respectively on top electrode and the bottom electrode 13 simultaneously; In order to radio-frequency power is transported on the bottom electrode 13 or top electrode and bottom electrode 13 on, thereby produce big electric field in that process chambers is inner.Most of electric field lines are comprised in the processing region between top electrode and the bottom electrode 13, and this electric field quickens the gas molecule collision of the reacting gas that makes it and import to being present in the inner electronics of process chambers on a small quantity.These collisions cause the ionization of reacting gas and exciting of plasma, thereby in process chambers, produce plasma.The neutral gas molecule of reacting gas has lost electronics when standing these highfields, stay the ion of positively charged.The ion of positively charged quickens towards bottom electrode 13 directions, combines with neutral substance in the substrate that is processed, excites substrate to process i.e. etching, deposit etc.Certain suitable position at plasma processing apparatus 1 is provided with the exhaust gas region (not shown); Exhaust gas region is connected with external exhaust apparatus (not shown), extracts processing region out in order to reacting gas and the bi-product gas that in processing procedure, will use.
Because plasma receives electric field controls; And the field intensity of the two poles of the earth edge can receive the influence of rim condition up and down; Total some electric field line is crooked, and causes electric field marginal portion field intensity uneven, and then causes the plasma density of this part of plasma processing apparatus of prior art inhomogeneous.Particularly, the core processing procedure speed of substrate W is the fastest, the processing procedure speed of marginal portion a little less than.
Introduce in the face of the utility model mechanism of the utility model down.
The utility model provides an independent converging device that is applied to plasma processing apparatus.Fig. 2 is the structural representation of plasma converging device of plasma processing apparatus of the specific embodiment of the utility model; As shown in Figure 2; This plasma processing unit 2 comprises the process chambers (not shown), has the top electrode (not shown) and the bottom electrode 23 that are arranged in parallel in the process chambers.Usually, the zone between top electrode and bottom electrode 23 is a processing region, and this zone will form high-frequency energy to light and to keep plasma.Above bottom electrode 23, be provided with electrostatic chuck, electrostatic chuck comprises at least buying in first dielectric layer 24 and second dielectric layer, 21, the second dielectric layers and is provided with DC electrode 22 that it is used to produce the electrostatic attraction of clamping substrate W.Reacting gas is input in the process chambers from the gas source (not shown), one or more radio-frequency power supplies 25.
Wherein, referring to Fig. 2, said converging device 26 is arranged at the upper surface of electrostatic chuck, and said converging device top also carries substrate, and wherein, said converging device 26 comprises at least:
The 26a of plate-like first, it has the first surface that can combine with the surface of said electrostatic chuck, and has the second surface that combines with the lower surface of said substrate W.
Enclose shape second portion 26b, itself and vertical setting of the said 26a of first, and be connected in the periphery of the said 26a of first.
Wherein, in order can substrate W to be placed in the converging device 26, be appreciated that the inevitable area of area of the said 26a of first, the inevitable thickness of the height of said second portion 26b greater than said substrate W greater than said substrate W.
Further, said converging device adopts aluminium or pottery (ceramic) to process, and ceramic material can be Al
2O
3, the RF electric field can partial penetration Al
2O
3But direct voltage is guaranteed to hold high impedance.
Fig. 3 is the vertical view of plasma converging device of plasma processing apparatus of the specific embodiment of the utility model, and as shown in Figure 3, converging device 26 is " bowl-shape " structure, wherein, and the middle discoid 26a of first thickness d
2Be 1mm～5mm, second portion 26b is arranged at the periphery of the said 26a of first, its height l
2Be 1cm～5cm.Said 26a of first and second portion 26b exemplarily process with one-body molded.
Because the converging device 26 of " bowl-shape " is positioned over substrate W on the surface of the smooth 26a of first of central authorities; And the thickness ratio of second portion 26b and substrate W has certain height on every side, is equivalent to be provided with a circle " fence " equably in the periphery of the marginal portion of substrate W." fence " like this changes the plasma distribution of plasma area; Particularly, referring to Fig. 1, get more in the fringe region plasma distribution of substrate W; Concentration is bigger; The processing procedure speed of substrate W fringe region is improved thus, and the plasma distribution above other zones of substrate W is almost constant, and concentration is consistent.Therefore, substrate processing procedure speed lower fringe region has originally obtained compensation, makes its homogeneity obtain very big improvement.
The utility model also provides a kind of plasma processing apparatus 1, it is characterized in that, said plasma processing apparatus 1 comprises the described converging device 26 of the utility model first aspect.
The utility model also provides an electrostatic chuck that can improve substrate processing procedure homogeneity that is applied to plasma processing apparatus.Fig. 4 is the structural representation of electrostatic chuck of plasma processing apparatus of the specific embodiment of the utility model; As shown in Figure 4; This plasma processing unit 3 comprises the process chambers (not shown), has the top electrode (not shown) and the bottom electrode 33 that are arranged in parallel in the process chambers.Usually, the zone between top electrode and bottom electrode 33 is a processing region, and this zone will form high-frequency energy to light and to keep plasma.Above bottom electrode 33, be provided with electrostatic chuck, electrostatic chuck comprises at least buying in first dielectric layer 34 and second dielectric layer, 36, the second dielectric layers and is provided with DC electrode 32 that it is used to produce the electrostatic attraction of clamping substrate W.Reacting gas is input in the process chambers from the gas source (not shown), one or more radio-frequency power supplies 35.
Wherein, referring to Fig. 4, aforementioned electrostatic chuck comprises at least: first dielectric layer 34; Second dielectric layer 36, it is positioned at said first dielectric layer 34 tops, and is embedded with the electrode 32 that is used to produce electrostatic attraction,
Wherein, said second dielectric layer 36 comprises at least:
Plate-like third part 36a, it has the first surface that can combine with the surface of electrostatic chuck basal disc, and has the second surface that combines with the lower surface of said substrate W;
Enclose shape the 4th part 36b, it is provided with said third part 36a is vertical, and is connected in the periphery of said third part.
Wherein, in order can substrate W to be placed in the electrostatic chuck, be appreciated that the inevitable area of area of said third part 36a, the inevitable thickness of the height of said the 4th part 36b greater than said substrate W greater than said substrate W.
Further, said electrostatic chuck adopts aluminium or pottery to process.
Fig. 5 is the vertical view of electrostatic chuck of plasma processing apparatus of the specific embodiment of the utility model, and as shown in Figure 3, second dielectric layer 36 of electrostatic chuck is " bowl-shape " structure, wherein, and middle discoid third part 36a thickness d
3Be 1mm～5mm, the 4th part 36b is arranged at the periphery of said third part 36a, its height l
3Be 1cm～5cm.Said third part 36a and the 4th part 36b exemplarily process with one-body molded.
Because electrostatic chuck second dielectric layer 36 of " bowl-shape " is positioned over substrate W on the surface of the smooth third part 36a of central authorities; And the thickness ratio of the 4th part 36b and substrate W has certain height on every side, is equivalent to be provided with a circle " fence " equably in the periphery of the marginal portion of substrate W." fence " like this changes the plasma distribution of plasma area; Particularly, referring to Fig. 4, get more in the fringe region plasma distribution of substrate W; Concentration is bigger; The processing procedure speed of substrate W fringe region is improved thus, and the plasma distribution above other zones of substrate W is almost constant, and concentration is consistent.Therefore, substrate processing procedure speed lower fringe region has originally obtained compensation, makes its homogeneity obtain very big improvement.
The utility model also provides a kind of plasma processing apparatus, it is characterized in that, the aforesaid electrostatic chuck of said plasma processing apparatus.
With reference to Fig. 6, its center of circle with substrate is an initial point, is transverse axis with the diameter of substrate, has confirmed a reference axis with the etch rate for the Y axle.Wherein, S1 is the etch rate curve of using the substrate that obtains before the employing gathering ring adjustment of prior art, and is visible, and its middle section etch rate around in the center of circle is higher, and minimum at the etch rate of its fringe region, it certainly exists the defective of homogeneity.S2 is corresponding to having used the adjusted etch rate curve of the utility model gathering ring, and wherein, the etch rate of fringe region is improved, and substrate homogeneity defective has obtained effective improvement.The superiority of the utility model has been described thus, and the utility model can improve edge effect fast effectively with low power, realizes the processing procedure homogenization.
Although the content of the utility model has been done detailed introduction through above-mentioned preferred embodiment, will be appreciated that above-mentioned description should not be considered to the restriction to the utility model.After those skilled in the art have read foregoing, for the multiple modification of the utility model with to substitute all will be conspicuous.Therefore, the protection range of the utility model should be limited appended claim.
Claims (9)
1. a plasma converging device that is applied to plasma processing apparatus is characterized in that said converging device is arranged at the upper surface of electrostatic chuck, and said converging device top also carries substrate, and wherein, said converging device comprises at least:
Plate-like first, it has the first surface that can combine with the surface of said electrostatic chuck, and has the second surface that combines with the lower surface of said substrate;
Enclose the shape second portion, it is provided with said first is vertical, and is connected in the periphery of said first,
Wherein, the area of said first is greater than the area of said substrate, and the height of said second portion is greater than the thickness of said substrate.
2. converging device according to claim 1 is characterized in that, said converging device adopts metallic aluminium or aluminium oxide or yttrium material to process.
3. converging device according to claim 1 is characterized in that, the thickness of said first is 1mm～5mm, and the height of said second portion is 1cm～3cm.
4. converging device according to claim 1 is characterized in that, said first is provided with several can be through the passage of elevate a turnable ladder thimble, and said elevate a turnable ladder thimble carries out elevate a turnable ladder through said passage to substrate.
5. a plasma processing apparatus is characterized in that, said plasma processing apparatus comprises each described converging device of claim 1 to 4.
6. an electrostatic chuck that is applied to plasma processing apparatus is characterized in that, said electrostatic chuck comprises:
First dielectric layer;
Second dielectric layer, it is positioned at said first dielectric layer top, and is embedded with the electrode that is used to produce electrostatic attraction,
Wherein, said second dielectric layer comprises at least:
The plate-like third part, it has the first surface that can combine with the surface of electrostatic chuck basal disc, and has the second surface that combines with the lower surface of said substrate;
Enclose shape the 4th part, it is provided with said third part is vertical, and is connected in the periphery of said third part,
Wherein, the area of said third part is greater than the area of said substrate, and said tetrameric height is greater than the thickness of said substrate.
7. electrostatic chuck according to claim 6 is characterized in that, said second dielectric layer adopts aluminium or pottery to process.
8. electrostatic chuck according to claim 6 is characterized in that, the thickness of said third part is 1mm～5mm, and said tetrameric height is 1cm～3cm.
9. a plasma processing apparatus is characterized in that, said plasma processing apparatus comprises each described electrostatic chuck of claim 6 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120569756 CN202585324U (en) | 2011-12-30 | 2011-12-30 | Plasma processing device, gathering device and electrostatic chuck thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120569756 CN202585324U (en) | 2011-12-30 | 2011-12-30 | Plasma processing device, gathering device and electrostatic chuck thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202585324U true CN202585324U (en) | 2012-12-05 |
Family
ID=47254709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120569756 Expired - Lifetime CN202585324U (en) | 2011-12-30 | 2011-12-30 | Plasma processing device, gathering device and electrostatic chuck thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202585324U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768299A (en) * | 2016-08-16 | 2018-03-06 | 北京北方华创微电子装备有限公司 | Bogey and semiconductor processing equipment |
-
2011
- 2011-12-30 CN CN 201120569756 patent/CN202585324U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768299A (en) * | 2016-08-16 | 2018-03-06 | 北京北方华创微电子装备有限公司 | Bogey and semiconductor processing equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Plasma processing device, gathering device and electrostatic chuck thereof Effective date of registration: 20150202 Granted publication date: 20121205 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170809 Granted publication date: 20121205 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121205 |
|
| CX01 | Expiry of patent term |