CN103227083B - A kind of slide holder for plasma processing apparatus - Google Patents
A kind of slide holder for plasma processing apparatus Download PDFInfo
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- CN103227083B CN103227083B CN201210021956.0A CN201210021956A CN103227083B CN 103227083 B CN103227083 B CN 103227083B CN 201210021956 A CN201210021956 A CN 201210021956A CN 103227083 B CN103227083 B CN 103227083B
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- slide holder
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Abstract
The invention provides a kind of slide holder for carrying substrates being applied to plasma processing apparatus, wherein, described substrate is positioned at above described slide holder, wherein, described slide holder comprises: the first electrode, it is connected with the radio-frequency power supply with first frequency, for generation of plasma, and electrostatic chuck, it is positioned at above described first electrode, wherein, described electrostatic chuck comprises: the first dielectric layer, is wherein provided with one or more vacuum cavity; Second dielectric layer, it is positioned at above described first dielectric layer, and is embedded with the electrode for generation of electrostatic attraction; 3rd dielectric substance layer, it is implanted in described first dielectric layer, and wherein, described 3rd dielectric substance layer is different with the dielectric constant of described first dielectric substance layer.Present invention also offers a kind of plasma processing apparatus comprising above-mentioned slide holder.The present invention can improve edge effect, improves process uniformity.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of slide holder for plasma processing apparatus.
Background technology
The edge effect of semiconductor arts piece is a problem of puzzlement semiconductor industry.The edge effect of so-called semiconductor arts piece refers in plasma treatment procedure, because plasma is by electric field controls, and the field intensity of the two poles of the earth edge can by the impact of rim condition up and down, some electric field line total bends, and cause Electric field edge part field intensity uneven, and then cause the plasma density of this part uneven.In that case, also there is a circle around the semiconductor arts piece produced and process uneven region.This non-uniform phenomenon is more obvious when rf electric field frequency is higher, and the inhomogeneities degree being greater than this plasma concentration when 60MHZ is even greater than 100Mhz at rf frequency is difficult to regulate and control with the gathering ring of other device as being positioned at electrostatic chuck edge again.
Because semiconductor arts piece is circular, therefore more outer ring area is larger, and the not good rate of finished products that will cause of the homogeneity of each process procedure of marginal portion significantly declines.Generally adopting today of 300mm processing procedure, the loss that semiconductor arts piece edge effect brings is more huge.
Therefore, need in the industry to improve edge effect simply and effectively, improve process uniformity.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes the slide holder for plasma processing apparatus that can improve homogeneity.
First aspect present invention provides a kind of slide holder for carrying substrates being applied to plasma processing apparatus, and wherein, described substrate is positioned at above described slide holder, and wherein, described slide holder comprises:
First electrode, it is connected with the radio-frequency power supply with first frequency, for generation of plasma,
Electrostatic chuck, it is positioned at above described first electrode, and wherein, described electrostatic chuck comprises:
First dielectric layer, is wherein provided with one or more vacuum cavity;
Second dielectric layer, it is positioned at above described first dielectric layer, and is embedded with the electrode for generation of electrostatic attraction;
3rd dielectric substance layer, it is implanted in described first dielectric layer, and wherein, described 3rd dielectric substance layer is different with the dielectric constant of described first dielectric substance layer.
Alternatively, described 3rd dielectric substance layer is implanted in described first dielectric layer below corresponding to described substrate center region, and wherein, the dielectric constant of described 3rd dielectric layer is less than the dielectric constant of described first dielectric substance layer.
Alternatively, described one or more vacuum cavity is arranged in described first dielectric layer below corresponding to described substrate center region.
Alternatively, described one or more vacuum cavity is arranged at respectively corresponding to described substrate center region and fringe region, and in described first dielectric layer of zone line between described middle section and described fringe region.
Alternatively, described identical with the volume in described one or more vacuum cavities corresponding to described substrate zone line corresponding to one or more vacuum cavity in described substrate center region.
Further, the described one or more cavity corresponding to substrate center region is connected with the described one or more cavities corresponding to substrate zone line, and one-tenth is integrated.
Alternatively, the described volume corresponding to one or more vacuum cavities in described substrate center region is greater than the described volume corresponding to one or more vacuum cavities of described substrate zone line.
Further, the described one or more cavity corresponding to substrate center region is connected with the described one or more cavities corresponding to substrate zone line, and one-tenth is integrated.
Wherein, described first frequency is more than 13M hertz.
Second aspect present invention additionally provides a kind of plasma processing apparatus, wherein, comprises the slide holder that first aspect present invention provides.
Wherein, described first frequency is more than 13M hertz.
Slide holder provided by the invention and the plasma processing apparatus comprising this slide holder can improve edge effect simply and effectively, improve process uniformity.
Accompanying drawing explanation
Fig. 1 is the slide holder structural representation of the vacuum treatment installation of the preferred embodiments of the present invention;
Fig. 2 is that the present invention carries out the schematic diagram of Region dividing to substrate;
Fig. 3 is the slide holder structural representation of the vacuum treatment installation of the first specific embodiment of the present invention;
Fig. 4 is the slide holder structural representation of the vacuum treatment installation of the second specific embodiment of the present invention;
Fig. 5 is invention effect schematic diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
The present invention by arranging one or more cavity in the dielectric between bottom electrode and substrate of vacuum treatment installation, and by different dielectric configuration, change the dielectric constant of equivalent capacity between described bottom electrode and substrate lower surface, thus change the size of described equivalent capacity further, to realize being optimized the process uniformity of substrate.
Fig. 1 is the slide holder structural representation of the vacuum treatment installation of the present invention's specific embodiment.Hereafter by describe specific embodiment in, described vacuum treatment installation is etching machine bench especially.As shown in Figure 1, the invention provides a kind of slide holder 1 for carrying substrates W being applied to plasma processing apparatus, wherein, described substrate W is positioned at above described slide holder 1.Wherein, described slide holder 1 comprises:
First electrode 13, described first electrode 13 is connected with the radio-frequency power supply 15 with first frequency f.It should be noted that, also comprise a second electrode (not shown) parallel with described first electrode 13 in etching machine bench chamber upper part, both combine the plasma for generation of processing procedure, to carry out etching processing to described substrate W.
Wherein, described first electrode 13 is by electrical conductor material processing procedure, especially, can be made up of metallic aluminium.
Electrostatic chuck, it is positioned at above described first electrode 13, wherein, comprising:
First dielectric layer 14, is wherein provided with one or more vacuum cavity.The present invention needs different configuration modes to above-mentioned one or more vacuum cavity according to different technique, will specifically tell about hereinafter.
Second dielectric layer 11, it is positioned at above described first dielectric layer 14, and is embedded with electrode 12.Described electrode 12 is layer electrode membranes, and it is connected to DC power supply (not shown), for generation of the electrostatic attraction to substrate W.
3rd dielectric layer 16, it implants described first dielectric, and in 14, wherein, described 3rd dielectric substance layer 16 is different with the dielectric constant of described first dielectric substance layer 14.
In order to more concisely technological invention mechanism of the present invention is described easily, need to carry out Region dividing to substrate.It should be noted that, the Region dividing hereinafter carried out substrate is not in esse, but the present invention and the virtual grate that substrate is carried out for convenience of description, can not in order to limit the present invention.Fig. 2 is that the present invention carries out the schematic diagram of Region dividing to substrate.As shown in Figure 2, it illustrates the vertical view of the substrate of a horizontal positioned, described substrate is discoidal, with the center of circle of discoidal substrate for starting point, the circular portion being positioned at middle section is set as the middle section C ' of substrate, be positioned at the zone line M ' that the peripheral circular annular region of described middle section C ' is set as substrate, be positioned at the fringe region E ' that the peripheral circle ring area of described zone line M ' is set as substrate.By reference to the accompanying drawings 1, in the first dielectric layer 14 in electrostatic chuck, region corresponding to the middle section C ' of described substrate W is middle section C, region corresponding to the zone line M ' of described substrate W is zone line M, and the region corresponding to the fringe region E ' of substrate W is fringe region E.Wherein, described zone line M is between described middle section C and fringe region E.Division due to above-mentioned zone is not in esse, so, according to technique needs, can adjust arbitrarily the division of above-mentioned zone, such as, the Region dividing corresponding to substrate region that etching rate can be reduced to a certain degree is fringe region, and not must divide according to digital scope.
Original thinking of the present invention changes semiconductor arts piece fringe field density by changing parasitic capacitance between cavity and top electrode, and semiconductor arts piece edge effect improves.That is the electric field redistribution by regulating the parasitic capacitance between edge plasma and cavity can make semiconductor arts piece edge.In general, affect this parasitic capacitance value because have three, i.e. the relative area of top electrode edge and cavity, the distance between top electrode edge and cavity, and edge plasma and cavity form the effective dielectric constant in space.Plasma treatment chamber is once make, clearly, its top electrode edge and the relative area of cavity and the distance between them are fixing, and the Relationship Comparison of parasitic capacitance and Electric Field Distribution is complicated, different radio-frequency (RF) energy inputs also can affect this relation, and consider technologic feasibility, it is very difficult for precalculating and producing the vacuum reaction chamber with suitable size parasitic capacitance.
Therefore, what uniquely likely change is exactly the effective dielectric constant of plasma and cavity space, the effective dielectric constant of the first dielectric substance layer namely mentioned above.The present invention is based on such consideration, the effective dielectric constant in this space is regulated and obtains a suitable parasitic capacitance, make electric field redistribution, and then make semiconductor arts piece plasma treatment effect homogeneous.
As shown in Figure 1, composition graphs 2, described 3rd dielectric substance layer 16 to be implanted in described first dielectric layer below corresponding to described substrate W middle section 14, and wherein, the dielectric constant of described 3rd dielectric layer 16 is less than the dielectric constant of described first dielectric substance layer 14.
Regard the first electrode 13 and substrate W as three equivalent capacity Cc, Cm, Ce respectively according to middle section C, zone line M and fringe region E, namely the first dielectric layer 14 wherein act as this equivalent capacity medium wherein, therefore, according to capacitance equation:
C=ε S/4 π kd, wherein, ε is dielectric constant, and d is distance.
Thus, due in the present embodiment, owing to empty H11 being arranged in the middle section C of the first dielectric layer 14 easily produced below the higher middle section of etch rate, make the dielectric in middle section C compared with the zone line M of its periphery and the dielectric of fringe region E few, namely, the dielectric constant of the equivalent capacity Cc of middle section C reduces, and then described equivalent capacity Cc is reduced, thus make the radio frequency source 15 be connected on the first electrode 13 can arrive the minimizing of substrate center region C further, the plasma quantity making the substrate center area unit time produce thus reduces, thus the interaction liveness between the plasma of generation and substrate is reduced, the etch rate in the described substrate center region of final reduction.Further, the dielectric constant due to the 3rd dielectric substance layer 16 is less than described first dielectric layer 14, that is, the dielectric constant of the equivalent capacity Cc of middle section C reduces further, thus achieves and be optimized the process uniformity of substrate.
Wherein, described one or more vacuum cavity also can be arranged at respectively corresponding to described substrate center region and fringe region, and in described first dielectric layer of zone line between described middle section and described fringe region.
Alternatively, the one or more vacuum cavities be arranged at described in corresponding to described substrate center region are identical with the described volume be arranged at corresponding to one or more vacuum cavities of described substrate zone line.With reference to Fig. 3, in the present embodiment, the volume of H21 equals the volume of H22, then can reduce the etch rate of substrate W middle section C ' and zone line M ' thus, the etch rate of substrate W fringe region E is in a disguised form compensated, improves the edge effect of substrate W.
Wherein, the described one or more empty H21 corresponding to substrate center region is connected with the described one or more empty H22 corresponding to substrate zone line, and one-tenth is integrated.
Alternatively, the volume in the one or more vacuum cavities corresponding to described substrate zone line is arranged at described in the volume be arranged at described in corresponding to one or more vacuum cavities in described substrate center region is greater than.As shown in Figure 4, in the present embodiment, the volume of H31 is greater than the volume of H32, then progressively can adjust according to middle section C ', middle M ' and fringe region E ' respectively the etch rate of silicon chip W thus.Particularly, because the volume of the vacuum cavity H31 being arranged in middle section C is maximum, then the etch rate corresponding to the middle section C ' of silicon chip W is lowered at most.Secondly, because the volume of the vacuum cavity H32 being positioned at zone line M is less than described vacuum cavity H31, the etch rate then corresponding to the zone line M ' of silicon chip W have also been obtained reduction, but it must reduce the etch rate of amplitude lower than the middle section C ' corresponding to silicon chip W.Again, the fringe region E due to the fringe region E ' corresponding to silicon chip W in the present embodiment does not arrange any vacuum cavity, and its etch rate does not carry out any adjustment.Therefore, above-mentioned control makes the etch rate corresponding to silicon chip W middle section C ' minimum, the a little higher than described etch rate corresponding to silicon chip W middle section C ' of etch rate corresponding to the zone line M ' of silicon chip W, and the etch rate corresponding to the fringe region E ' of silicon chip W is the highest.Edge effect compensates thus, optimizes process uniformity further.
The described one or more empty H31 corresponding to substrate center region is connected with the described one or more empty H32 corresponding to substrate zone line, and one-tenth is integrated.
It should be noted that, it will be appreciated by those skilled in the art that, the present invention also comprises some change case to above-described embodiment, such as, the position that region, zone line, fringe region can be entreated in the substrate corresponding all arranges one or more cavity, and by the dielectric layer that the position configuration dielectric constant of to entreat region, zone line, fringe region corresponding respectively is in the substrate different, as long as the etch rate realizing middle section is minimum, zone line secondly, the most higher position of fringe region can compensate etched edge effect, thus realizes goal of the invention.
Further, described first frequency f is more than 13M hertz, preferably more than 60Mhz, even 100Mhz.
Further, described first dielectric layer is columniform.
Present invention also offers a kind of plasma processing apparatus, it is characterized in that, comprise aforesaid slide holder.
Further, described first frequency is more than 13M hertz, preferably more than 60Mhz, even 100Mhz.
Further, described first dielectric layer is columniform.
Wherein, the dielectric substance that the present invention applies can be selected from quartz (Quarz), pottery (Ceramic), polytetrafluoroethylene (Tefflon) etc.Wherein, the dielectric constant of described quartz is 3.58, and the dielectric constant of polytetrafluoroethylene is 2.55, and the dielectric constant of pottery is 3.The present invention can arrange above-mentioned dielectric substance in zones of different according to size as required, such as, can arrange the minimum polytetrafluoroethylene of dielectric constant, arrange quartz or pottery in other regions at middle section.
With reference to Fig. 5, it for initial point, with the diameter of substrate for transverse axis, is that Y-axis determines a reference axis with etch rate with the center of circle of substrate.Wherein, S1 is the etch rate curve of the substrate that the slide holder of application prior art obtains, visible, its middle section etch rate around the center of circle is higher, and region etch speed decreases therebetween, minimum at the etch rate of its fringe region, it certainly exists the defect of homogeneity.S2 and S3 is corresponding to the etch rate curve applying the substrate that slide holder provided by the invention obtains.Wherein, S2 only corresponds to substrate center region and implements the present invention, and the etch rate of its middle section is significantly reduced as seen.S3 implements the present invention to substrate center region and zone line, and the etch rate of its middle section and zone line is obtained for reduction.Describe superiority of the present invention thus, the present invention effectively can improve edge effect fast with low power, realizes processing procedure homogenization.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (11)
1. be applied to the slide holder for carrying substrates of plasma processing apparatus, wherein, described substrate is positioned at above described slide holder, it is characterized in that, described slide holder comprises:
First electrode, it is connected with the radio-frequency power supply with first frequency, for generation of plasma,
Electrostatic chuck, it is positioned at above described first electrode, and wherein, described electrostatic chuck comprises:
First dielectric layer, is wherein provided with one or more vacuum cavity;
Second dielectric layer, it is positioned at above described first dielectric layer, and is embedded with the electrode for generation of electrostatic attraction;
3rd dielectric substance layer, it is implanted in described first dielectric layer, and wherein, described 3rd dielectric substance layer is different with the dielectric radio of described first dielectric layer.
2. slide holder according to claim 1, it is characterized in that, described 3rd dielectric substance layer is implanted in described first dielectric layer below corresponding to described substrate center region, and wherein, the dielectric radio of described 3rd dielectric substance layer is less than the dielectric radio of described first dielectric layer.
3. slide holder according to claim 2, is characterized in that, described one or more vacuum cavity is arranged in described first dielectric layer below corresponding to described substrate center region.
4. slide holder according to claim 2, it is characterized in that, described one or more vacuum cavity is arranged at respectively corresponding to described substrate center region and fringe region, and in described first dielectric layer of zone line between described middle section and described fringe region.
5. slide holder according to claim 4, is characterized in that, the one or more vacuum cavities corresponding to described substrate center region are identical with the volume in the one or more vacuum cavities corresponding to described substrate zone line.
6. slide holder according to claim 5, is characterized in that, the one or more vacuum cavity corresponding to substrate center region is connected with the one or more vacuum cavities corresponding to substrate zone line, and one-tenth is integrated.
7. slide holder according to claim 4, is characterized in that, the volume corresponding to one or more vacuum cavities in described substrate center region is greater than the volume in the one or more vacuum cavities corresponding to described substrate zone line.
8. slide holder according to claim 7, is characterized in that, the one or more vacuum cavity corresponding to substrate center region is connected with the one or more vacuum cavities corresponding to substrate zone line, and one-tenth is integrated.
9. the slide holder according to any one of claim 1 to 8, is characterized in that, described first frequency is more than 13M hertz.
10. a plasma processing apparatus, is characterized in that, comprises the slide holder described in any one of claim 1 to 8.
11. plasma processing apparatus according to claim 10, is characterized in that, described first frequency is more than 13M hertz.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210021956.0A CN103227083B (en) | 2012-01-31 | 2012-01-31 | A kind of slide holder for plasma processing apparatus |
| TW101104328A TWI458043B (en) | 2012-01-31 | 2012-02-10 | A stage for a plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210021956.0A CN103227083B (en) | 2012-01-31 | 2012-01-31 | A kind of slide holder for plasma processing apparatus |
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| CN103227083A CN103227083A (en) | 2013-07-31 |
| CN103227083B true CN103227083B (en) | 2015-08-12 |
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| CN201210021956.0A Active CN103227083B (en) | 2012-01-31 | 2012-01-31 | A kind of slide holder for plasma processing apparatus |
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| KR102656790B1 (en) * | 2018-11-21 | 2024-04-12 | 삼성전자주식회사 | electrostatic chuck and plasma processing apparatus including the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101477944A (en) * | 2003-02-03 | 2009-07-08 | 日本奥特克株式会社 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2006332204A (en) * | 2005-05-24 | 2006-12-07 | Toto Ltd | Electrostatic chuck |
| JP2007005740A (en) * | 2005-06-23 | 2007-01-11 | Creative Technology:Kk | Structure for electrostatic chuck potential supply part and its manufacturing and reproduction method |
| US8157953B2 (en) * | 2006-03-29 | 2012-04-17 | Tokyo Electron Limited | Plasma processing apparatus |
| JP5233092B2 (en) * | 2006-08-10 | 2013-07-10 | 東京エレクトロン株式会社 | Mounting table for plasma processing apparatus and plasma processing apparatus |
| JP5395798B2 (en) * | 2008-08-27 | 2014-01-22 | 株式会社アルバック | Electrostatic chuck and vacuum processing equipment |
| JP2010080717A (en) * | 2008-09-26 | 2010-04-08 | Tokyo Electron Ltd | Placing stand for plasma treatment apparatus |
| JP5186394B2 (en) * | 2009-01-06 | 2013-04-17 | 東京エレクトロン株式会社 | Mounting table and plasma etching or ashing device |
| KR101134736B1 (en) * | 2010-04-26 | 2012-04-13 | 가부시키가이샤 크리에이티브 테크놀러지 | Electrostatic chuck having spacer |
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- 2012-01-31 CN CN201210021956.0A patent/CN103227083B/en active Active
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101477944A (en) * | 2003-02-03 | 2009-07-08 | 日本奥特克株式会社 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103227083A (en) | 2013-07-31 |
| TWI458043B (en) | 2014-10-21 |
| TW201332053A (en) | 2013-08-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |