CN103227091A - Plasma processing device - Google Patents
Plasma processing device Download PDFInfo
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- CN103227091A CN103227091A CN2013101388927A CN201310138892A CN103227091A CN 103227091 A CN103227091 A CN 103227091A CN 2013101388927 A CN2013101388927 A CN 2013101388927A CN 201310138892 A CN201310138892 A CN 201310138892A CN 103227091 A CN103227091 A CN 103227091A
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Abstract
The invention discloses a plasma processing device which comprises a reaction cavity, a first radio-frequency power source and a second radio-frequency power source, wherein the reaction cavity comprises an upper electrode and a lower electrode which are arranged in parallel, an annular insulator, and opening metal ring electrodes; the upper electrode is arranged in a gas spray header; the lower electrode is arranged in a static clamping chuck; the first radio-frequency power source is used for forming a perpendicular radio-frequency electric field between the upper and lower electrodes to generate plasma; the second radio-frequency power source is used for adjusting energy of the plasma; the annular insulator surrounds the static clamping chuck and/or an area above the static clamping chuck; the opening metal ring electrodes are wound by wires, and embedded into the annular insulator; and a radio-frequency current is supplied in the metal ring electrodes to generate a horizontal induction electric field. The plasma processing device can improve the uniformity of density distribution of the plasma in the reaction cavity effectively.
Description
Technical field
The present invention relates to semiconductor processing equipment, particularly a kind of plasma processing apparatus.
Background technology
In recent years, more and more higher to the integrated level and the performance requirement of element along with the development of semiconductor fabrication process, plasma technique (Plasma Technology) has obtained using very widely.Plasma technique is by feeding reacting gas and introducing electron stream in the reaction chamber of plasma processing apparatus, utilize rf electric field that electronics is quickened, bump with reacting gas and to make reacting gas generation ionization and plasma, the plasma that produces can be used to various semiconductor fabrication process, for example depositing operation (as chemical vapour deposition (CVD)), etching technics (as dry etching) etc.
Plasma-treating technology often adopts capacitive coupling plasma processing apparatus to produce plasma.Fig. 1 illustrates a kind of structural representation of capacitive coupling plasma processing apparatus.As shown in Figure 1, be arranged with the top electrode 2 and the bottom electrode 3 of pair of plates formula in the reaction chamber 1 of plasma processing apparatus in parallel, top electrode is disposed in the reacting gas spray head 4, and bottom electrode is disposed in the electrostatic chuck 5, and pending substrate 6 is positioned on the electrostatic chuck 5.By in the flat bottom electrode 3 that be arranged in parallel, applying high-frequency radio frequency, with top electrode 2 ground connection, make 3 of top electrode 2 and bottom electrodes form the rf electric fields of vertical direction, the electronics that is quickened by rf electric field and the molecule generation ionization of reacting gas collide, to reacting gas ionization to generate plasma.
Yet the uniformity of the plasma density that the plasma processing apparatus that uses in actual applications, the capacitive coupling type produces is unsatisfactory.Because capacity coupled architectural characteristic, the electric field strength of zone line and fringe region there are differences in the reaction chamber, the density of the plasma that is produced has the characteristic distribution that zone line is higher than fringe region, and owing to the speed of substrate being carried out plasma treatment is relevant with this plasma density, finally can cause the uneven situation of plasma-treating technology: for example, fast, edge etching of etching or processing speed or processing speed are slow in the middle of the substrate.This technology controlling and process and rate of finished products to the semiconductor device manufacturing all has a significant impact.Therefore, uniformity how to improve plasma processing apparatus ionic medium volume density is that those skilled in the art are badly in need of the technical problem that solves at present.
For addressing this problem, a kind of way of the prior art is for being provided with the closed conducting ring that connects second radio frequency power source around electrostatic chuck, above closed conducting ring, form second electric field of ring-type by second radio-frequency power supply, regulate the parameter of second radio frequency power source afterwards again, the electric field mutual superposition of second electric field of feasible annular and bottom electrode top, improve the Electric Field Distribution of electrostatic chuck fringe region, make the central area of pending substrate and the plasma density of fringe region have consistency and uniformity preferably.Yet, for comprising element in the reaction chamber with conductive material, focusing ring for example, the rf electric field of the vertical direction of this stack can aggravate the bombardment of plasma to focusing ring, causes the damage of focusing ring possibly.
Summary of the invention
Main purpose of the present invention is to overcome the defective of prior art, and a kind of plasma processing apparatus of plasma density comparatively uniformly that can obtain to distribute is provided.Further, provide a kind of plasma processing apparatus that prolongs the focusing ring life-span.
For reaching above-mentioned purpose, the invention provides a kind of plasma processing apparatus, it comprises reaction chamber, first radio frequency power source and second radio frequency power source wherein comprise the electrostatic chuck that is used for the pending substrate of clamping in the reaction chamber; Be used for gas spray head to the inner input of described reaction chamber process gas; Top electrode that is arranged in parallel and bottom electrode, described top electrode are arranged in the described gas spray head, and described bottom electrode is located in the described electrostatic chuck; Described first radio frequency power source links to each other with described bottom electrode by first radio frequency adaptation with second radio frequency power source, described first radio frequency power source produces plasma in order to the rf electric field that radio-frequency power is provided forms vertical direction between described top electrode and described bottom electrode to excite process gas, and described second radio frequency power source is in order to adjust the energy of described plasma; Described reaction chamber also comprises annular insulator, and it is around the upper area of described electrostatic chuck and/or described electrostatic chuck; And by the opening becket electrode that Wire-wound forms, be embedded in the described annular insulator, described opening becket electrode is connected with radio-frequency current to produce the induction field of horizontal direction.
Preferably, described reaction chamber also comprises focusing ring and the support ring that is used to support described focusing ring, and described focusing ring is around described substrate, and described support ring is positioned at below the described focusing ring and around described electrostatic chuck; Described dead ring is described annular insulator, and described opening becket electrode level is embedded in the described support ring.
Preferably, the cross section of described support ring is L shaped or rectangle.
Preferably, described reaction chamber also comprises the plasma confinement assembly, and it comprises a plurality of concentric rings that pile up mutually in vertical direction and be parallel to each other and be provided with at interval, and described plasma confinement assembly is around the zone of described electrostatic chuck top; At least one concentric ring in the described plasma confinement assembly is described annular insulator.
Preferably, a plurality of concentric rings in the described plasma confinement assembly are described annular insulator, in described a plurality of concentric rings respectively level be embedded described opening becket electrode.
Preferably, the in series or in parallel with each other or series-parallel connection of a plurality of described opening becket electrode.
Preferably, described radio-frequency current is produced by the 3rd radio frequency power source that puts on described opening becket electrode, and the frequency of described the 3rd radio frequency power source is a low frequency.
Preferably, described the 3rd radio frequency power source connects an end of described opening becket electrode by second radio frequency adaptation, to produce described radio-frequency current in described opening becket electrode; The other end ground connection of described opening becket electrode.
Preferably, described first radio frequency adaptation comprises power divider, described second radio frequency power source links to each other with an end of described opening becket electrode by described power divider, to apply described the 3rd radio frequency power source and produce described radio-frequency current on described opening becket electrode; The other end ground connection of described opening becket electrode.
Preferably, described power divider is a tunable capacitor.
Preferably, the scope of described tunable capacitor is less than 1000pF.
Preferably, the frequency of described the 3rd radio frequency power source is smaller or equal to 13.56MHz.
Preferably, the frequency of described second radio frequency power source is smaller or equal to 13.56MHz, and the frequency of described first radio frequency power source is higher than the frequency of described second radio frequency power source.
Preferably, described top electrode and described bottom electrode are plate electrode.
Preferably, described opening becket electrode is that Wire-wound 1 circle or 2 circles form.
Preferably, the material of described annular insulator is selected from quartz or pottery.
Compared to prior art, its beneficial effect of plasma processing apparatus of the present invention is: the present invention is by being provided with the opening becket electrode that is connected with radio-frequency current around substrate or on every side, make the induction field that produces horizontal direction in the reaction chamber, come the plasma density of compensates for substrate fringe region, and then make plasma-treating technology even.In addition, by in becket, feeding the radio-frequency current of low frequency, make that the electric field of the vertical direction that produces between becket and the chamber top electrode is very little, therefore can not cause more violent plasma bombardment, can effectively prolong the useful life of focusing ring focusing ring.
Description of drawings
Fig. 1 is the structural representation of prior art ionic medium body processing unit;
Fig. 2 is the structural representation of the plasma processing apparatus of one embodiment of the invention;
Fig. 3 is the schematic diagram of the plasma processing apparatus split shed becket electrode of one embodiment of the invention;
Fig. 4 is the structural representation of the plasma processing apparatus of another embodiment of the present invention.
Embodiment
For making content of the present invention clear more understandable,, content of the present invention is described further below in conjunction with Figure of description.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art also is encompassed in protection scope of the present invention.
Fig. 2～Fig. 4 has shown a plurality of execution modes of plasma treatment appts of the present invention.Should be appreciated that, plasma processing apparatus among the present invention can be devices such as plasma etching, plasma physics gas deposition, plasma chemical vapor deposition, plasma surface cleaning, plasma processing apparatus only is exemplary, it can comprise still less or more element, or the arrangement of this element may be to that indicated in the drawings identical or different.
Embodiment 1
See also Fig. 2, it is depicted as the structural representation of present embodiment plasma process chamber.Plasma processing apparatus comprises reaction chamber 10, wherein introduces the gas that responds; The top of reaction chamber 10 is provided with reacting gas spray head 11, and reacting gas spray head 11 comprises flat top electrode 21, these top electrode 21 ground connection; Reaction chamber 10 bottoms are provided with the electrostatic chuck 12 that is used for clamping substrate 30, and this substrate 30 can be the glass plate of waiting to want the semiconductor chip of etching or processing or treating to be processed into flat-panel monitor.Be provided with the flat bottom electrode 22 parallel in the electrostatic chuck 12 with top electrode 21.Bottom electrode 22 is connected with the second radio frequency source 40b with the first radio frequency source 40a by first radio frequency adaptation 41.The first radio frequency source 40a and the second radio frequency source 40b are applied on the bottom electrode 22, the first radio frequency source 40a makes between top electrode 21 and the bottom electrode 22 rf electric field that forms vertical direction, the electronics that is quickened by rf electric field and the molecule generation ionization of reacting gas collide, to reacting gas ionization to generate plasma.The second radio frequency source 40b article on plasma body is done the electric field force effect simultaneously, adjusts the energy of plasma, and plasma is beaten on substrate 30 surfaces.The frequency of the first radio frequency source 40a is high more, and the plasma density of generation is also just big more, and in general, the frequency of the first radio frequency source 40a is a high frequency, for example is 40MHz, 60MHz or 120MHz.The frequency of the second radio frequency source 40b is lower, for example is 400KHz, 2MHz or 13.56MHz.In order to improve plasma density distribution, the present invention is being provided with opening becket electrode 23 around the electrostatic chuck 12 or on every side.For avoiding opening becket electrode 23 to be exposed in the plasma environment, opening becket electrode 23 is embedded in the annular insulator.The material of annular insulator for example is insulating material such as pottery or quartz.Annular insulator can be looped around electrostatic chuck 12 or electrostatic chuck 12 upper areas or be looped around electrostatic chuck 12 and upper area thereof.Electrostatic chuck 12 is preferably the concentric setting with opening becket electrode 23.Please in conjunction with shown in Figure 3, opening becket electrode 23 is formed by Wire-wound, and preferable, opening becket electrode is 1 circle or 2 circles of reeling.The preferable copper cash of selecting for use of lead, it has the conductance height, is difficult for oxidation and the little advantage of loss.Be connected with radio-frequency current I in the opening becket electrode 23, radio-frequency current I is produced by the 3rd radio frequency power source 42 that puts on becket.According to Faraday's law, this radio-frequency current produces alternating magnetic fields, and alternating magnetic fields can be responded to the induction field E ' that produces the horizontal direction opposite with aforementioned radio-frequency current I direction.As shown in Figure 3, at a time, opening becket electrode 23 has induction field E ' as shown by arrows.By among the figure as can be known, this induction field is the horizontal direction along opening becket electrode 23 circumference, therefore, in opening becket electrode 23 present positions, the electric field strength that is to say the reaction chamber fringe region is strengthened, the plasma density of fringe region will increase like this, thereby promote the uniformity of plasma density distribution.
Because the radio-frequency current of circulation is to be produced by the 3rd radio frequency power source 42 in the opening becket electrode 23, and the 3rd radio frequency power source 42 also may produce the rf electric field of vertical direction between opening becket electrode 23 and top electrode 21, when the frequency of the 3rd radio frequency power source 42 high more, then the rf electric field intensity that produces between opening becket electrode 23 and the top electrode 21 is also big more, and the stack of the rf electric field between this big rf electric field and top electrode 21 and the bottom electrode 22, the aggravation that just causes plasma bombardment easily causes the element that contains conductive material in the reaction chamber 10, as the damage of focusing ring.Therefore, preferable, the 3rd radio frequency power source 42 that is applied on the opening becket electrode 23 is low frequency, and its frequency for example is smaller or equal to 13.56MHz.Because the 3rd radio frequency power source 42 frequencies are lower, the rf electric field intensity that forms between opening becket electrode 23 and the top electrode 21 is also very little, even can ignore, therefore just can effectively avoid the aggravation of plasma bombardment, prolong the useful life of element with conductive material.
Please continue with reference to figure 2, in one embodiment of this invention, also comprise focusing ring 13 and support ring 14 in the reaction chamber.Focusing ring 13 is located at around the pending substrate 30, and in order to the environment of a relative closure to be provided around substrate 30, confined plasma is to improve the homogeneity of the plasma on 30 of the substrates.Support ring 14 is positioned at the focusing ring below, and it is surrounded on electrostatic chuck 12, can play effect fixing and support focusing ring 13.Wherein, the shape of cross section of support ring 14 for example is L shaped or rectangle, and the lateral wall of its madial wall and electrostatic chuck 12 fits tightly as much as possible, prevents that plasma from beating on the surface of electrostatic chuck 12, and protection electrostatic chuck 12 is avoided loss.Support ring 14 can adopt insulating material such as pottery or quartz to form.In the present embodiment, with support ring 14 as annular insulator, opening becket electrode 23 levels be embedded with support ring 14 in, can form the induction field of horizontal direction thus at the fringe region of electrostatic chuck, thus plasma density that can the compensates for substrate fringe region.
In addition, in the present embodiment, the 3rd radio frequency power source that puts on the low frequency of opening becket electrode can be to distribute the back generation by second radio frequency power source through power divider, also can be the radio frequency power source of a low frequency independently.Specifically, as shown in Figures 2 and 3, in the present embodiment, the 3rd radio frequency power source 42 is radio frequency power source independently, and then opening becket electrode 23 1 ends are connected to the 3rd radio frequency power source 42 by second radio frequency adaptation 43, the direct or indirect ground connection of the other end.Certainly, in other embodiments, the 3rd radio frequency power source 42 is not a radio frequency power source independently, then be provided with power divider in first radio frequency adaptation 41 this moment, power divider can be selected tunable capacitor for use, is responsible for regulating and distributing the radio-frequency power that the second radio frequency power source 40b is applied to opening becket electrode 23.One end of opening becket electrode 23 is connected to the second radio frequency power source 40b by power divider, the direct or indirect ground connection of the other end.The span of tunable capacitor is less than 1000pF.
As known from the above, be embedded the opening becket electrode 23 that is connected with radio-frequency current by level in around the support ring 14 of electrostatic chuck 12 in the present embodiment, make electrostatic chuck 12 fringe regions produce the induction field of horizontal direction.Like this, the plasma density of substrate 30 central areas and fringe region can access adjustment and become roughly approaching, and then can obtain the preferable processing uniformity when carrying out plasma treatment, as the uniformity of etched speed.
Fig. 4 is the structural representation of provided by the present invention kind of another embodiment of plasma processing apparatus, and embodiment shown in Figure 4 can independently be provided with or use with the foregoing description combination.
The difference of present embodiment and embodiment 1 is, reaction chamber in the present embodiment comprises plasma confinement assembly 15, it comprises the concentric ring 15a that piles up mutually on a plurality of vertical direction and be parallel to each other and be provided with at interval, these concentric rings 15a is around the electrostatic chuck upper area, that is to say the zone between top electrode 21 and the bottom electrode 22, the conversion zone P that plasma forms, substrate 30 is dealt with can be thought in this zone.Have the slit between the adjacent concentric ring 15a, when substrate 30 was made plasma treatment, the reacting gas of handling can be discharged from conversion zone P by the slit, and plasma can be constrained in this conversion zone P.Concentric ring 15a can be made by the material of various resisting plasma corrosions, and is for example, quartzy or ceramic.In order to utilize design of the present invention simultaneously, at least one concentric ring 15a can be designed as the aforesaid annular insulator that is embedded with opening becket electrode 23 in the plasma confinement assembly 15, and its split shed becket electrode 23 is connected with radio-frequency current.Similar with the action principle among the embodiment 1, opening becket electrode 23 is formed by Wire-wound, is preferably reel 1 circle or 2 circles, and the radio-frequency current of circulate among produces alternating magnetic fields and further produces induction field along becket circumference, horizontal direction.This induction field has compensated near the opening becket electrode 23, that is to say the electric field strength of conversion zone P fringe region, make the plasma density of conversion zone P fringe region increase, thereby promoted the uniformity of substrate 30 top diverse location plasma density distribution.Radio-frequency current in the opening becket electrode 23 is to be produced by the 3rd radio frequency power source 42 that applies thereon equally.In one embodiment, a plurality of concentric ring 15a are annular insulator in the plasma confinement assembly 15, wherein level is embedded opening becket electrode 23 respectively, and in the case, these opening becket electrodes 23 can be serial or parallel connection or series-parallel connection to the three radio frequency power sources 42.Preferable, the 3rd radio frequency power source 42 is the low frequency power source, its frequency for example is smaller or equal to 13.56MHz.Thus, the rf electric field intensity that forms between opening becket electrode 23 and the top electrode 21 is also very little, even can ignore, and therefore just can effectively avoid the aggravation of plasma bombardment, prolongs the useful life of reaction chamber inner conductor element.The 3rd radio frequency power source 42 can be to distribute after-applied radio frequency power source at opening becket electrode 23 by the second radio frequency power source 40b through power divider, also can be the 3rd radio frequency power source 42 independently.Being provided with of the 3rd radio frequency power source 42 is same as the previously described embodiments, does not repeat them here.
In sum, plasma processing apparatus of the present invention, by at the opening becket electrode that is connected with radio-frequency current around substrate or the setting of substrate upper area, fringe region in reaction chamber generates the induction field of horizontal direction, thereby compensate rf electric field central area and fringe region influence pockety in reaction chamber between original upper/lower electrode, the corresponding substrate center zone and the plasma density of fringe region are evenly distributed, and then make plasma more even the processing of substrate.In addition, because producing the radio frequency power source of radio-frequency current in opening becket electrode is low frequency, make the rf electric field that can produce vertical direction between opening becket electrode and the top electrode hardly, just can not aggravate the bombardment of plasma yet, thereby can also obviously prolong the useful life of conductive material element (as focusing ring) the element (as focusing ring) that has conductive material in the chamber.
Though the present invention discloses as above with preferred embodiment; right described many embodiment only give an example for convenience of explanation; be not in order to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocated should be as the criterion so that claims are described.
Claims (16)
1. plasma processing apparatus wherein, comprising:
Reaction chamber, it comprises:
The electrostatic chuck that is used for the pending substrate of clamping;
Be used for gas spray head to the inner input of described reaction chamber process gas;
Top electrode that is arranged in parallel and bottom electrode, described top electrode are located in the described gas spray head, and described bottom electrode is located in the described electrostatic chuck; And
First radio frequency power source and second radio frequency power source, link to each other with described bottom electrode by first radio frequency adaptation, described first radio frequency power source produces plasma in order to the rf electric field that radio-frequency power is provided forms vertical direction between described top electrode and described bottom electrode to excite process gas, described second radio frequency power source is in order to adjust the energy of described plasma
It is characterized in that:
Described reaction chamber also comprises annular insulator, and it is around the upper area of described electrostatic chuck and/or described electrostatic chuck; And by the opening becket electrode that Wire-wound forms, be embedded in the described annular insulator, described opening becket electrode is connected with radio-frequency current to produce the induction field of horizontal direction.
2. plasma processing apparatus according to claim 1, it is characterized in that, described reaction chamber also comprises focusing ring and the support ring that is used to support described focusing ring, and described focusing ring is around described substrate, and described support ring is positioned at below the described focusing ring and around described electrostatic chuck; Described dead ring is described annular insulator, and described opening becket electrode level is embedded in the described support ring.
3. plasma processing apparatus according to claim 1 is characterized in that, the cross section of described support ring is L shaped or rectangle.
4. plasma processing apparatus according to claim 1, it is characterized in that, described reaction chamber also comprises the plasma confinement assembly, it comprises a plurality of concentric rings that pile up mutually in vertical direction and be parallel to each other and be provided with at interval, and described plasma confinement assembly is around the zone of described electrostatic chuck top; At least one concentric ring in the described plasma confinement assembly is described annular insulator.
5. plasma processing apparatus according to claim 4 is characterized in that, a plurality of concentric rings in the described plasma confinement assembly are described annular insulator, in described a plurality of concentric rings respectively level be embedded described opening becket electrode.
6. plasma processing apparatus according to claim 5 is characterized in that, the in series or in parallel with each other or series-parallel connection of a plurality of described opening becket electrode.
7. according to each described plasma processing apparatus of claim 1 to 6, it is characterized in that described radio-frequency current is produced by the 3rd radio frequency power source that puts on described opening becket electrode, the frequency of described the 3rd radio frequency power source is a low frequency.
8. plasma processing apparatus according to claim 7 is characterized in that, described the 3rd radio frequency power source connects an end of described opening becket electrode by second radio frequency adaptation, to produce described radio-frequency current in described opening becket electrode; The other end ground connection of described opening becket electrode.
9. plasma processing apparatus according to claim 7, it is characterized in that, described first radio frequency adaptation comprises power divider, described second radio frequency power source links to each other with an end of described opening becket electrode by described power divider, to apply described the 3rd radio frequency power source and produce described radio-frequency current on described opening becket electrode; The other end ground connection of described opening becket electrode.
10. plasma processing apparatus according to claim 9 is characterized in that, described power divider is a tunable capacitor.
11. plasma processing apparatus according to claim 10 is characterized in that, the scope of described tunable capacitor is less than 1000pF.
12. plasma processing apparatus according to claim 7 is characterized in that, the frequency of described the 3rd radio frequency power source is smaller or equal to 13.56MHz.
13. plasma processing apparatus according to claim 7 is characterized in that, the frequency of described second radio frequency power source is smaller or equal to 13.56MHz, and the frequency of described first radio frequency power source is higher than the frequency of described second radio frequency power source.
14. plasma processing apparatus according to claim 1 is characterized in that, described top electrode and described bottom electrode are plate electrode.
15. plasma processing apparatus according to claim 1 is characterized in that, described opening becket electrode is that Wire-wound 1 circle or 2 circles form.
16. plasma processing apparatus according to claim 1 is characterized in that, the material of described annular insulator is selected from quartz or pottery.
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| CN201310138892.7A CN103227091B (en) | 2013-04-19 | 2013-04-19 | Plasma processing apparatus |
| TW103113779A TW201448032A (en) | 2013-04-19 | 2014-04-16 | Plasma processing device |
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| CN201310138892.7A CN103227091B (en) | 2013-04-19 | 2013-04-19 | Plasma processing apparatus |
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| CN103792842A (en) * | 2014-01-22 | 2014-05-14 | 清华大学 | Base platform for fine control of space distribution of power field and control method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI514472B (en) | 2015-12-21 |
| TW201448032A (en) | 2014-12-16 |
| CN103227091B (en) | 2016-01-27 |
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Address after: 201201 Shanghai City Jingqiao export processing zone of Pudong New Area (South) Taihua Road No. 188 Patentee after: China micro semiconductor equipment (Shanghai) Co.,Ltd. Address before: 201201 Shanghai City Jingqiao export processing zone of Pudong New Area (South) Taihua Road No. 188 Patentee before: China micro semiconductor equipment (Shanghai) Co.,Ltd. |
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