CN102610476B - Electrostatic chuck - Google Patents
Electrostatic chuck Download PDFInfo
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- CN102610476B CN102610476B CN201210063136.8A CN201210063136A CN102610476B CN 102610476 B CN102610476 B CN 102610476B CN 201210063136 A CN201210063136 A CN 201210063136A CN 102610476 B CN102610476 B CN 102610476B
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- electrostatic chuck
- electrode
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- annular
- annular electrodes
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Abstract
The invention discloses an electrostatic chuck, which comprises an upper surface. An electrode is arranged inside the electrostatic chuck, the distance between the electrode and the upper surface of the electrostatic chuck is different from that between another electrode and the upper surface, and the electrode is simultaneously connected with a direct-current power supply and a radio-frequency power source. The etching/deposition rate of the edge of the electrostatic chuck can be compensated, so that effectiveness of the electrostatic chuck is ensured.
Description
Technical field
The present invention relates to a kind of electrostatic chuck, particularly a kind of electrostatic chuck internal electrode to electrostatic chuck upper surface apart from different electrostatic chucks.
Background technology
The edge effect of semiconductor arts piece is a problem of puzzlement semiconductor industry.The edge effect of so-called semiconductor arts piece refers in plasma treatment procedure, because plasma is by electric field controls, and the field intensity of the two poles of the earth edge can be subject to ectocine up and down, some electric field line total bends, and cause Electric field edge part field intensity uneven, and then cause the plasma density of this part uneven.In that case, also there is a circle around the semiconductor arts piece produced and process uneven region.
Because semiconductor arts piece is circular, therefore more outer ring area is larger, and the not good rate of finished products that will cause of the homogeneity of each process procedure of marginal portion significantly declines.Generally adopting today of 300mm processing procedure, the loss that semiconductor arts piece edge effect brings is more huge.
Therefore, need in the industry to improve edge effect simply and effectively, improve process uniformity.
Summary of the invention
The object of this invention is to provide a kind of electrostatic chuck, can the etching/deposition at compensated for electrostatic sucker edge, thus ensure the validity of electrostatic chuck.
In order to realize above object, the present invention is achieved by the following technical solutions:
The invention provides a kind of electrostatic chuck, described electrostatic chuck comprises a upper surface, and described electrostatic chuck inside is provided with an electrode, and described electrode is different to the distance of described electrostatic chuck upper surface, and described electrode connects DC power supply and radio frequency power source simultaneously.
Described electrode is divided into several annular electrodes, and several described annular electrodes are stepped to be distributed in electrostatic chuck, and several annular electrodes described are electrically connected successively.
Several described annular electrodes are arranged with one heart.
The diameter of several described annular electrodes is different.
Several described annular electrodes reduce apart from the distance of electrostatic chuck upper surface along with the increase of the diameter of annular electrode.
Several described annular electrodes increase apart from the distance of electrostatic chuck upper surface along with the increase of the diameter of annular electrode.
Described electrostatic chuck internal electrode is tapered, and described tapered electrode reduces apart from the distance of electrostatic chuck upper surface along with the increase of the diameter of tapered electrode.
Described electrostatic chuck internal electrode is tapered, and described tapered electrode increases apart from the distance of electrostatic chuck upper surface along with the increase of the diameter of tapered electrode.
Described electrostatic chuck comprises some layers of dielectric layer, and described each annular electrode is located in variant dielectric layer respectively, and the dielectric material of described each layer dielectric layer is different.
The height of every layer of described dielectric layer is not more than 0.5mm.
The present invention compared with prior art, regulate the plasma density above described electrostatic chuck even by arranging electrostatic chuck internal electrode to described electrostatic chuck upper surface distance is different, thus can the etching/deposition at compensated for electrostatic sucker edge, realize the uniform treatment for process substrates.
Accompanying drawing explanation
Fig. 1 is the structural representation of the plasma processing chamber at electrostatic chuck place of the present invention;
Fig. 2 is a kind of structural representation being provided with one of the embodiment of the electrostatic chuck of step electrode of the present invention;
Fig. 3 is a kind of structural representation being provided with the embodiment two of the electrostatic chuck of step electrode of the present invention;
Fig. 4 is a kind of structural representation being provided with the embodiment three of the electrostatic chuck of step electrode of the present invention;
Fig. 5 is a kind of structural representation being provided with the embodiment four of the electrostatic chuck of tapered electrode of the present invention;
Fig. 6 is a kind of structural representation being provided with the embodiment four of the electrostatic chuck of tapered electrode of the present invention.
Embodiment
Below in conjunction with accompanying drawing, by describing a preferably specific embodiment in detail, the present invention is further elaborated.
As shown in Fig. 1 ~ 4, a kind of electrostatic chuck 10 being provided with step electrode, on it, support belt treatment substrate 11 comprises: several annular electrodes 1, several described annular electrodes 1 are stepped to be distributed in electrostatic chuck 10, these several annular electrodes 1 are electrically connected successively, by circuit, adjacent annular electrode 1 can be linked together, also can, by other modes such as sheet metals, annular electrode 1 is electrically connected successively.In various embodiments of the present invention, these several annular electrodes 1 arrange with one heart and diameter is different, and thus these several annular electrodes 1 just constitute the stepped layout extended to edge from 10 centers of electrostatic chuck.
One of embodiment:
As shown in Figure 1 and Figure 2, several described annular electrodes 1 reduce apart from the distance of electrostatic chuck 10 upper surface along with the increase of the diameter of annular electrode 1, thus, several annular electrodes 1 just define the stepped layout that center is low, edge is high, these several annular electrodes 1 are electrically connected successively, and in electrostatic chuck 10, introduce high-voltage DC power supply (as 700V) and radio-frequency current by circuit.
Because the distance of distance electrostatic chuck 10 upper surface is larger, then each annular electrode 1 is larger with the thickness of the dielectric material of that section of stylolitic part of electrostatic chuck 10 upper surface, equivalent capacity between annular electrode 1 and electrostatic chuck 10 upper surface is also less, the loss that high-voltage DC power supply 4 and radio frequency power source 5 pass through is larger, the plasma concentration produced is lower, and corresponding etching rate is lower.
Therefore, after introducing high-voltage DC power supply 4 and radio frequency power source 5 in electrostatic chuck 10, due to the annular electrode 1 of distribution stepped in the present embodiment, make the plasma concentration that in plasma processing chamber 100, in electrostatic chuck 10 base, bottom electrode 3 produces uneven, typically as the problem of intermediate concentration in capacitance coupling type plasma processing chamber higher than marginal portion is improved, the plasma concentration of marginal portion is compensated, by changing the distance of annular electrode 1 and electrostatic chuck 10 upper surface, the compensation plasma concentration that final adjustment acquisition one is best, the plasma concentration that the electric field that the bottom electrode 3 of plasma processing chamber 100 and the annular electrode 1 in electrostatic chuck 10 are produced superposes generation one homogeneous distributes, can ensure that the etching/deposition at the edge of electrostatic chuck 10 rises, etching/the deposition at compensated for electrostatic sucker 10 edge.
Embodiment two:
As shown in Figure 1, Figure 3, several annular electrodes 1 increase apart from the distance of electrostatic chuck 10 upper surface along with the increase of the diameter of annular electrode 1, thus, several annular electrodes 1 just define the stepped layout that center is high, edge is low, these several annular electrodes 1 are electrically connected successively, and in electrostatic chuck 10, introduce high-voltage DC power supply 4 and radio frequency power source 5 by circuit.
Because the distance of distance electrostatic chuck 10 upper surface is larger, then each annular electrode 1 is larger with the thickness of the dielectric material of that section of stylolitic part of electrostatic chuck 10 upper surface, equivalent capacity between annular electrode 1 and electrostatic chuck 10 upper surface is also less, high-voltage DC power supply 4 by time isolated larger, the etching rate of corresponding fringe region is lower.
In inductive coupling plasma processing chamber, because the plasma density produced is middle low, edge is high, and adopt the center described in the present embodiment high, the stepped annular electrode that edge is low, well solves the problem of this plasma skewness.
Embodiment three:
As Figure 1 and Figure 4, in the present embodiment, several annular electrodes 1 are located in different dielectric layers 2 respectively, and the dielectric material of every layer of dielectric layer 2 is different, and the height of every layer of dielectric layer 2 is not more than 0.5mm.Different dielectric materials has different dielectric constants, therefore, obtain the effect identical with two of embodiment with one of embodiment, namely the equivalent capacity between annular electrode 1 and electrostatic chuck 10 upper surface is changed, thus, make the plasma concentration that in original electrostatic chuck 10 base, bottom electrode produces uneven, typically as the problem of intermediate concentration higher than marginal portion is improved, the plasma concentration of marginal portion is compensated, by changing dielectric material, the compensation plasma concentration that final adjustment acquisition one is best, the plasma concentration that the electric field that bottom electrode 3 in base and the annular electrode 1 in electrostatic chuck 10 are produced superposes generation one homogeneous distributes, can ensure that the etching/deposition at the edge of electrostatic chuck 10 rises, etching/the deposition at compensated for electrostatic sucker 10 edge.
Embodiment four:
As shown in Fig. 1, Fig. 5, Fig. 6, electrostatic chuck 10 internal electrode 1 is conical, Fig. 5 illustrates that tapered electrode 1 reduces to the distance of electrostatic chuck 10 upper surface along with the increase of the diameter of annular electrode 1, thus defining the conical structure that center shown in Fig. 5 is low, edge is high, this tapered electrode connects high-voltage DC power supply 4 and radio frequency power source 5 simultaneously.
Because the distance of distance electrostatic chuck 10 upper surface is larger, the thickness of the dielectric material between electrode and electrostatic chuck upper surface is larger, equivalent capacity between annular electrode 1 and electrostatic chuck upper surface is also less, high-voltage DC power supply 4 by time isolated larger, corresponding etching rate is lower.
Adopt the technical scheme described in the present embodiment, typically as the problem of intermediate concentration in capacitance coupling type plasma processing chamber higher than marginal portion is improved, the plasma concentration of marginal portion is compensated, by changing the distance of annular electrode 1 and electrostatic chuck 10 upper surface, the compensation plasma concentration that final adjustment acquisition one is best, the plasma concentration that the electric field that the bottom electrode 3 of plasma processing chamber 100 and the annular electrode 1 in electrostatic chuck 10 are produced superposes generation one homogeneous distributes, can ensure that the etching/deposition at the edge of electrostatic chuck 10 rises, etching/the deposition at compensated for electrostatic sucker 10 edge.
In like manner, similar shown in Fig. 6, in inductive coupling plasma processing chamber, because the plasma density produced is middle low, edge is high, adopts the center described in Fig. 6 high, the tapered electrode that edge is low, well solves the problem of this plasma skewness.
In sum, a kind of electrostatic chuck of the present invention, can the etching/deposition at compensated for electrostatic sucker edge, thus ensures the validity of electrostatic chuck.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (4)
1. an electrostatic chuck, described electrostatic chuck comprises a upper surface, it is characterized in that, described electrostatic chuck inside is provided with an electrode, and described electrode is different to the distance of described electrostatic chuck upper surface, and described electrode connects DC power supply and radio frequency power source simultaneously;
Described electrode is divided into several annular electrodes, and several described annular electrodes are stepped to be distributed in electrostatic chuck, and several annular electrodes described are electrically connected successively; The diameter of several described annular electrodes is different; Several described annular electrodes reduce apart from the distance of electrostatic chuck upper surface along with the increase of the diameter of annular electrode (1).
2. electrostatic chuck according to claim 1, is characterized in that, several described annular electrodes are arranged with one heart.
3. electrostatic chuck according to claim 1, it is characterized in that, described electrostatic chuck comprises some layers of dielectric layer (2), and described each annular electrode (1) is located in variant dielectric layer (2) respectively, and the dielectric material of described each layer dielectric layer (2) is different.
4. electrostatic chuck according to claim 3, is characterized in that, the height of described every layer of dielectric layer (2) is not more than 0.5mm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210063136.8A CN102610476B (en) | 2012-03-12 | 2012-03-12 | Electrostatic chuck |
| TW101144196A TW201338090A (en) | 2012-03-12 | 2012-11-26 | Electrostatic sucking disc |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210063136.8A CN102610476B (en) | 2012-03-12 | 2012-03-12 | Electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102610476A CN102610476A (en) | 2012-07-25 |
| CN102610476B true CN102610476B (en) | 2015-05-27 |
Family
ID=46527771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210063136.8A Active CN102610476B (en) | 2012-03-12 | 2012-03-12 | Electrostatic chuck |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102610476B (en) |
| TW (1) | TW201338090A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789107A (en) * | 2014-12-26 | 2016-07-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Base and plasma processing equipment |
| CN106816354B (en) * | 2015-12-02 | 2019-08-23 | 北京北方华创微电子装备有限公司 | A kind of lower electrode and reaction chamber |
| KR20230106754A (en) * | 2018-08-13 | 2023-07-13 | 램 리써치 코포레이션 | Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745463A (en) * | 2003-02-03 | 2006-03-08 | 日本奥特克株式会社 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
| CN102067737A (en) * | 2008-06-23 | 2011-05-18 | 应用材料公司 | Cathode with inner and outer electrodes at different heights |
| CN102280342A (en) * | 2011-08-19 | 2011-12-14 | 中微半导体设备(上海)有限公司 | Plasma treatment device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW334609B (en) * | 1996-09-19 | 1998-06-21 | Hitachi Ltd | Electrostatic chuck, method and device for processing sanyle use the same |
| JP4421874B2 (en) * | 2003-10-31 | 2010-02-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| KR100755874B1 (en) * | 2005-11-30 | 2007-09-05 | 주식회사 아이피에스 | Electrostatic chuck for vacuum processing apparatus, processing apparatus having same and method for manufacturing same |
| KR100995250B1 (en) * | 2008-09-09 | 2010-11-18 | 주식회사 코미코 | Electrostatic chuck containing buffer layer for reducing thermal stress |
| KR100984751B1 (en) * | 2008-09-09 | 2010-10-01 | 주식회사 코미코 | Electrostatic chuck containing double buffer layer for reducing thermal stress |
| KR100997374B1 (en) * | 2009-08-21 | 2010-11-30 | 주식회사 코미코 | Electrode static chuck and method of manufacturing the same |
-
2012
- 2012-03-12 CN CN201210063136.8A patent/CN102610476B/en active Active
- 2012-11-26 TW TW101144196A patent/TW201338090A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745463A (en) * | 2003-02-03 | 2006-03-08 | 日本奥特克株式会社 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
| CN102067737A (en) * | 2008-06-23 | 2011-05-18 | 应用材料公司 | Cathode with inner and outer electrodes at different heights |
| CN102280342A (en) * | 2011-08-19 | 2011-12-14 | 中微半导体设备(上海)有限公司 | Plasma treatment device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI497640B (en) | 2015-08-21 |
| TW201338090A (en) | 2013-09-16 |
| CN102610476A (en) | 2012-07-25 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210202 Address after: 201201 Shanghai City Jingqiao export processing zone of Pudong New Area (South) Taihua Road No. 188 Patentee after: China micro semiconductor equipment (Shanghai) Co.,Ltd. Patentee after: Nanchang Medium and Micro Semiconductor Equipment Co.,Ltd. Address before: 201201 Shanghai City Jingqiao export processing zone of Pudong New Area (South) Taihua Road No. 188 Patentee before: China micro semiconductor equipment (Shanghai) Co.,Ltd. |