CN202049960U - Back surface field of solar cell - Google Patents

Back surface field of solar cell Download PDF

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Publication number
CN202049960U
CN202049960U CN2011201182206U CN201120118220U CN202049960U CN 202049960 U CN202049960 U CN 202049960U CN 2011201182206 U CN2011201182206 U CN 2011201182206U CN 201120118220 U CN201120118220 U CN 201120118220U CN 202049960 U CN202049960 U CN 202049960U
Authority
CN
China
Prior art keywords
back surface
solar cell
battery sheet
surface field
solar battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2011201182206U
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Chinese (zh)
Inventor
孙坚
冯帅臣
李勇
陈清波
张茂胜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIANGSU BRIGHT SOLAR ENERGY CO Ltd
Original Assignee
JIANGSU BRIGHT SOLAR ENERGY CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIANGSU BRIGHT SOLAR ENERGY CO Ltd filed Critical JIANGSU BRIGHT SOLAR ENERGY CO Ltd
Priority to CN2011201182206U priority Critical patent/CN202049960U/en
Application granted granted Critical
Publication of CN202049960U publication Critical patent/CN202049960U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model provides a back surface field of a solar cell. The back surface field is covered on the back surface of the solar cell, the distance between the edge of the back surface field and that of the solar cell is 0.4mm-0.6mm. In the utility model, the range of the back surface field is broadened to 0.4mm-0.6mm around the edge of the solar cell, and due to the area increase of the back surface field, the recombination rate of carriers on the back surface is effectively reduced, and the short-circuit current is further enhanced; owing to the increased area of the back surface field, the light reflecting path of light entering the solar cell can be prolonged; and a light trap effect can be taken together with a velvet surface structure, and the light utilization ratio is further improved.

Description

The back of the body field of solar battery sheet
Technical field
The utility model relates to field of photoelectric technology, particularly a kind of back of the body field of solar battery sheet.
Background technology
Along with day being becoming tight of global energy, solar energy is subjected to the extensive attention of countries in the world with exclusive advantage such as pollution-free, that the market space is big.Advantage such as that photovoltaic generation has is safe and reliable, noiseless, failure rate are low, solar cell is the main devices that in the photovoltaic power generation technology solar energy directly is converted to electric energy.
Common crystal silicon solar energy battery is partly to be made of back electrode, the back of the body, the P type layer that constitutes of semi-conducting material, N type layer, P-N knot, antireflection film, positive gate electrode etc.When solar irradiation was mapped to solar cell surface, antireflection film and suede structure can effectively reduce the light reflection loss of battery surface.After semiconductor structure in the solar cell absorbs solar energy, excite and produce electronics, the hole is right, electronics, hole are to being separated by the inner P-N knot of semiconductor built-in field, electronics flows into the N district, the hole flows into the P district, form the photoproduction electric field,, just have photogenerated current to flow through in the external circuit if the positive and negative electrode of crystal-silicon solar cell is connected with external circuit.
Most at present crystal silicon solar batteries adopts P type silicon chip, through formation P-N knot after the phosphorous diffusion, makes back electrode and back of the body field on P type silicon, makes positive gate electrode at the N face that diffuses to form, and entire device utilizes the photovoltaic effect of P-N knot to come work.Adopt in the crystal silicon solar batteries structure of silk screen printing making, back of the body field is mainly formed by the aluminium paste sintering, play surface passivation and reduce back of the body recombination-rate surface, provide back of the body emission to increase light path, form ohmic contact, reduce contact resistance, utilize aluminium gettering effect, improve minority carrier life time, form P+ layer aluminium back of the body field at the cell back face in addition and improve the open circuit voltage of solar cell, and then improve its conversion efficiency and power output.Therefore, the area coverage that increases the back of the body seems particularly important with the service efficiency that improves the battery sheet, causes the both positive and negative polarity of battery sheet to be short-circuited and increase the edge that area coverage may make slurry drain to the battery sheet blindly.Therefore, on this problem of area coverage that increases back of the body field, the distance at a control back of the body edge and battery sheet edge is very crucial.
The utility model content
The purpose of this utility model is to provide a kind of back of the body field of solar battery sheet, to solve the not high problem of solar battery sheet service efficiency.
The utility model provides a kind of back of the body field of solar battery sheet, and described back of the body field covers the back of the body surface of solar battery sheet, and the edge of the described back of the body is 0.4mm to 0.6mm apart from the edge of solar battery sheet.
Preferably, the edge of the described back of the body is 0.5mm apart from the edge of solar battery sheet.
Preferably, the described back of the body is formed by the aluminium paste sintering.
The back of the body field of the solar battery sheet that the utility model provides widens a back of the body scope to the 0.4mm to 0.6mm at solar battery sheet edge, and the long-pending increase of back of the body scene can effectively reduce the recombination rate of the surperficial charge carrier of the back of the body, and then strengthens short circuit current.To entering the light of solar battery sheet inside, the back of the body scene of increase is long-pending can to prolong the light path that light reflects, and the matching surface suede structure can form the light trapping effect, further improves the utilance of light.
Description of drawings
After having read embodiment of the present utility model with reference to accompanying drawing, will become apparent various aspects of the present utility model.Wherein,
The distributed architecture schematic diagram of the back of the body field of the solar battery sheet that Fig. 1 provides for the utility model embodiment.
Embodiment
Be described in further detail below in conjunction with the back of the body field of the drawings and specific embodiments the solar battery sheet that the utility model proposes.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only be used for conveniently, the purpose of aid illustration the utility model embodiment lucidly.
Core concept of the present utility model is, a kind of back of the body field of solar battery sheet is provided, a back of the body scope is widened to the 0.4mm to 0.6mm at solar battery sheet edge, and the long-pending increase of back of the body scene can effectively reduce the recombination rate of the surperficial charge carrier of the back of the body, and then strengthens short circuit current.To entering the light of solar battery sheet inside, the back of the body scene of increase is long-pending can to prolong the light path that light reflects, and the matching surface suede structure can form the light trapping effect, further improves the utilance of light.
The distributed architecture schematic diagram of the back of the body field of the solar battery sheet that Fig. 1 provides for the utility model embodiment.With reference to Fig. 1, the back of the body field 11 of solar battery sheet 10 covers the back of the body surface of solar battery sheet 10, and the edge of the described back of the body 11 is 0.4mm to 0.6mm apart from the edge of solar battery sheet 10.
In the present embodiment, the edge of the described back of the body 11 is 0.5mm apart from the edge of solar battery sheet 10.The described back of the body 11 is formed by the aluminium paste sintering, the area of back of the body field 11 is widened and is not caused aluminium paste to leak the both positive and negative polarity short circuit that causes battery to the edge of solar battery sheet 10.Back of the body field 11 areas that increase can further effectively reduce the recombination rate of the surperficial charge carrier of the back of the body, and then strengthen short circuit current.To entering the light of solar battery sheet 10 inside, back of the body field 11 areas of increase can prolong the light path of light reflection, and the matching surface suede structure can form the light trapping effect, further improves the utilance of light.
Making solar battery sheet 10 electrodes can adopt the method for any making electrodes such as silk screen printing, evaporation, sputter, plating, spraying, in the present embodiment, adopt the mode of silk screen printing to make back of the body field 11 and back electrode 12.At first choose the p type single crystal silicon sheet that is up to the standards, specification is 125mm * 125mm, and process chemical cleaning and surface wool manufacturing increase the absorption of light to form pyramid structure on monocrystalline silicon piece, improve the short circuit current and the conversion efficiency of battery sheet; Utilize technologies such as High temperature diffusion or ion injection on the p type single crystal silicon sheet, to produce the crystal silicon layer of N type again, so just, formed the P-N junction structure, remove the diffusion layer at edge then through plasma etching, remove the phosphorosilicate glass layer that diffuses to form by chemical corrosion, the deposit silicon nitride anti-reflection film, described silicon nitride anti-reflection film can reduce the light reflectivity of silicon chip surface, utilizes hydrionic one-tenth key to strengthen silicon chip surface and the interior passivation effect of body simultaneously, reduces the compound of charge carrier; Utilize silk screen printing successively to make back electrode 12 and back of the body field 11 at last.
Back of the body field 11 areas that increase can not only be used in the p type single crystal silicon sheet of above-mentioned specification, and the material of solar battery sheet 10 can also be that specification is the polysilicon of 156mm * 156mm.Will be understood by those skilled in the art that the material of described solar cell can be monocrystalline silicon, polysilicon, can also be organic semiconductor, nano material, low-dimensional materials etc.
The back of the body field 11 of the solar cell 10 that the utility model provides; only need design the screen printing screens structure; make back electrode 12 and back of the body field 11 according to the screen printing screens structure then; need not to purchase new equipment; extra cost can be do not increased, all large-scale production can be reached the technology of various types of solar cells and various making front, backplate.
Above, describe embodiment of the present utility model with reference to the accompanying drawings.But those skilled in the art can understand, and under the situation that does not depart from spirit and scope of the present utility model, can also do various changes and replacement to embodiment of the present utility model.These changes and replacement all drop in the utility model claims institute restricted portion.

Claims (3)

1. the back of the body field of a solar battery sheet, described back of the body field covers the back of the body surface of solar battery sheet, and the edge of the described solar battery sheet of edge distance of the described back of the body is 0.4mm to 0.6mm.
2. the back of the body field of solar battery sheet as claimed in claim 1 is characterized in that, the edge of the described solar battery sheet of edge distance of described back of the body field is 0.5mm.
3. the back of the body field of solar battery sheet as claimed in claim 1 is characterized in that, described back of the body field is formed by the aluminium paste sintering.
CN2011201182206U 2011-04-20 2011-04-20 Back surface field of solar cell Expired - Fee Related CN202049960U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011201182206U CN202049960U (en) 2011-04-20 2011-04-20 Back surface field of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011201182206U CN202049960U (en) 2011-04-20 2011-04-20 Back surface field of solar cell

Publications (1)

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CN202049960U true CN202049960U (en) 2011-11-23

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Country Status (1)

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CN (1) CN202049960U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103997288A (en) * 2014-06-11 2014-08-20 成都聚合科技有限公司 Concentrating solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103997288A (en) * 2014-06-11 2014-08-20 成都聚合科技有限公司 Concentrating solar cell

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111123

Termination date: 20170420

CF01 Termination of patent right due to non-payment of annual fee