CN203883020U - Polysilicon thin-film solar cell - Google Patents
Polysilicon thin-film solar cell Download PDFInfo
- Publication number
- CN203883020U CN203883020U CN201420271414.3U CN201420271414U CN203883020U CN 203883020 U CN203883020 U CN 203883020U CN 201420271414 U CN201420271414 U CN 201420271414U CN 203883020 U CN203883020 U CN 203883020U
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- solar cell
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- film solar
- housing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a polysilicon thin-film solar cell which comprises a housing with a multilayer structure. The bottommost part in the housing is provided with a substrate. A reflection reduction film, a p+/n+ type polysilicon seed crystal layer, a p-/n- type polysilicon absorbing layer, a n+/p+ type a-Si:H transmitting layer and TCO glass. The topmost end outside the housing is provided with a plurality of front electrodes for contacting. According to the polysilicon thin-film solar cell, a n+/p-/p+ type basic structure unit is adopted; a heavy doping technique is adopted in a transmitting area; Heavy doping of the transmitting area can lead to top-layer shallow-junction heavy doping, thereby greatly improving energy conversion efficiency of the solar cell and saving cost. The polysilicon thin-film solar cell further has advantages of: simple structure, simple manufacture process, etc.
Description
Technical field
The utility model belongs to solar energy and utilizes technical field, refers to especially a kind of multi-crystal silicon film solar battery.
Background technology
Energy shortage and environmental pollution are two significant problems that the century mankind face, and become the bottleneck of international community's economic development.Solar energy provides the preferred embodiments that solves these two problems as the regenerative resource of cleanliness without any pollution.At present, how to develop that photoelectric conversion efficiency is high, the life-span is long, stable performance and solar cell with low cost have caused global extensive concern.Therefore,, based on the needs of era development, solar cell has wide development space.
Solar energy power generating market is just flourish, and between 10 years, solar cell market increases rapidly with 40% ratio every year in the past, and wherein crystal-silicon solar cell has occupied the market share of solar cell nearly 90%.In crystalline silicon solar cell modules, the cost of silicon wafer accounts for 50% of solar cell total cost, even if production technology constantly progresses greatly and develops! The preparation cost that further significantly reduces crystal-silicon solar cell also reaches capacity; Therefore, filming or thin layer change into Main Means and the development trend into reducing solar cell cost.Thin film solar cell (TFSC) is compared with crystal-silicon solar cell, has that low light level function admirable, raw materials consumption significantly reduce and the advantage such as cost is low.And TFSC also can be prepared in flexible substrate, have good toughness, collapsible, can be curling and can large area production etc. advantage, can be applicable to the surfaces such as clothes, vehicle glass, aircraft and building future.
But traditional thin film solar cell exists the problem that energy conversion efficiency is lower, and complicated process of preparation, film thickness need further compression.
The energy conversion efficiency of the polysilicon thin-film solar battery of preparing in laboratory has at present reached 19%, but to really realize the extensive industrialization of the polysilicon thin-film solar battery of high-efficiency and low-cost, also need the polysilicon membrane prepared must be thin as far as possible and adopt cheap substrate.
Utility model content
The purpose of this utility model is to provide that a kind of Conversion of Energy is high, manufacturing process is simple, simple in structure, film thickness is low, has the multi-crystal silicon film solar battery of inexpensive glass substrate.
A kind of multi-crystal silicon film solar battery described in the utility model, comprise the housing with sandwich construction, in housing, bottommost is provided with substrate, is upwards provided with successively antireflective film, p+/n+ type polysilicon inculating crystal layer, p-/n-type polysilicon absorbed layer, n+/p+ type a-Si:H emission layer and TCO glass on described substrate; The outer the top of described housing is provided with multiple front electrodes.
Further improve, described TCO glass is formed by the conductive oxide film that evenly plates layer of transparent by surface of plate glass.
Further improve, described substrate is glass substrate.
The preparation method of described a kind of multi-crystal silicon film solar battery comprises the following steps:
1) glass making herbs into wool; Glass making herbs into wool has increased the effective light path of light in polysilicon membrane, so that polysilicon membrane is enhanced to the absorption of light.
2) deposition of barrier layer and anti-reflection layer; Barrier layer can be used to stop that substrate impurity enters polysilicon membrane active coating, can effectively reduce grain boundary and reduce impurity defect; Reflection when anti-reflection layer can reduce light and incides polysilicon membrane, increases the absorption of film to light.
3) deposition of a-Si layer;
4) preparation of polysilicon membrane, utilizes electron beam evaporation crystallization a-Si layer to obtain polysilicon membrane, or utilizes PEVCD direct deposition of polycrystalline silicon film in the glass substrate that has covered barrier layer;
5) rapid thermal annealing or laser annealing and hydrogen passivation, short annealing or laser annealing can reduce the defect of crystal boundary density and space charge region in a large number, and the hydrogen passivation various crystal boundary blemish of passivation and volume defect very effectively! To obtain higher-quality polysilicon membrane.
6) some optical confinement; In order to reduce the compound and series resistance of the surperficial charge carrier of the back of the body, utilize PEVCD and aluminium inductive technology etc. at upper surface deposition back of the body surface field layer, and in deposition process, carry out in-situ doped.
7) electricity restriction; In order to reduce the resistance of solar cell front and back electrode, utilize photoetching, twine printing, electron beam evaporation and electronics plating etc. to prepare the front and back electrode with ohmic contact.
8) passivation, carries out passivation to solar cell device surface.
The beneficial effects of the utility model are:
The utility model is different from traditional n/p type homojunction battery structure, the basic structural unit that adopts n+/p-/p+ type, has used heavy doping technique in emitter region, emitter region heavy doping can form the heavy doping of top layer shallow junction, greatly improve the energy conversion efficiency of solar cell, saved cost; The advantages such as this battery also has simple in structure, and manufacturing process is simple.Use glass substrate, not only have that with low cost, nonhazardous, light transmission are good, chemically stable and an easy advantage such as recovery, also there is certain thermal endurance and mechanical strength; Preparation technology is simple, can be further developed into larger active-matrix display screen; Can greatly improve the collection rate of photo-generated carrier containing the polycrystalline silicon thin film solar cell structure of TCO.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
As shown in Figure 1, a kind of multi-crystal silicon film solar battery described in the utility model, comprise the housing 1 with sandwich construction, the interior bottommost of housing 1 is provided with glass substrate 2, is upwards provided with successively antireflective film 3, p+/n+ type polysilicon inculating crystal layer 4, p-/n-type polysilicon absorbed layer 5, n+/p+ type a-Si:H emission layer 6 and TCO glass 7 in described glass substrate 2; Described outer the top of housing 1 is provided with multiple front electrodes 8 for contacting.
Described TCO glass 7 is formed by the conductive oxide film that evenly plates layer of transparent by surface of plate glass.
The utility model adopts the basic structural unit of n+/p-/p+ type, has used heavy doping technique in emitter region, and emitter region heavy doping can form the heavy doping of top layer shallow junction, has greatly improved the energy conversion efficiency of solar cell, has saved cost; The advantages such as this battery also has simple in structure, and manufacturing process is simple.Use glass substrate, not only have that with low cost, nonhazardous, light transmission are good, chemically stable and an easy advantage such as recovery, also there is certain thermal endurance and mechanical strength; Preparation technology is simple, can be further developed into larger active-matrix display screen; Can greatly improve the collection rate of photo-generated carrier containing the polycrystalline silicon thin film solar cell structure of TCO.
The preparation method of described a kind of multi-crystal silicon film solar battery comprises the following steps:
1) glass making herbs into wool; Glass making herbs into wool has increased the effective light path of light in polysilicon membrane, so that polysilicon membrane is enhanced to the absorption of light.
2) deposition of barrier layer and anti-reflection layer; Barrier layer can be used to stop that substrate impurity enters polysilicon membrane active coating, can effectively reduce grain boundary and reduce impurity defect; Reflection when anti-reflection layer can reduce light and incides polysilicon membrane, increases the absorption of film to light.
3) deposition of a-Si layer;
4) preparation of polysilicon membrane, utilizes electron beam evaporation crystallization a-Si layer to obtain polysilicon membrane, or utilizes PEVCD direct deposition of polycrystalline silicon film in the glass substrate that has covered barrier layer;
5) rapid thermal annealing or laser annealing and hydrogen passivation, short annealing or laser annealing can reduce the defect of crystal boundary density and space charge region in a large number, and the hydrogen passivation various crystal boundary blemish of passivation and volume defect very effectively! To obtain higher-quality polysilicon membrane.
6) some optical confinement; In order to reduce the compound and series resistance of the surperficial charge carrier of the back of the body, utilize PEVCD and aluminium inductive technology etc. at upper surface deposition back of the body surface field layer, and in deposition process, carry out in-situ doped.
7) electricity restriction; In order to reduce the resistance of solar cell front and back electrode, utilize photoetching, twine printing, electron beam evaporation and electronics plating etc. to prepare the front and back electrode with ohmic contact.
8) passivation, carries out passivation to solar cell device surface.
The utility model provides a kind of multi-crystal silicon film solar battery; the above is only preferred implementation method of the present utility model; should be understood that; for those skilled in the art; do not departing under the prerequisite of the utility model principle; can also make some improvement, these improve and also should be considered as protection range of the present utility model.
Claims (3)
1. a multi-crystal silicon film solar battery, it is characterized in that, comprise the housing (1) with sandwich construction, in housing, bottommost is provided with substrate (2), is upwards provided with successively antireflective film (3), p+/n+ type polysilicon inculating crystal layer (4), p-/n-type polysilicon absorbed layer (5), n+/p+ type a-Si:H emission layer (6) and TCO glass (7) on described substrate (2); The outer multiple front electrodes (8) that are topmost provided with of described housing.
2. multi-crystal silicon film solar battery according to claim 1, is characterized in that, described TCO glass (7) is formed by the conductive oxide film that evenly plates layer of transparent by surface of plate glass.
3. multi-crystal silicon film solar battery according to claim 1, is characterized in that, described substrate (2) is glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420271414.3U CN203883020U (en) | 2014-05-26 | 2014-05-26 | Polysilicon thin-film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420271414.3U CN203883020U (en) | 2014-05-26 | 2014-05-26 | Polysilicon thin-film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203883020U true CN203883020U (en) | 2014-10-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420271414.3U Expired - Fee Related CN203883020U (en) | 2014-05-26 | 2014-05-26 | Polysilicon thin-film solar cell |
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| Country | Link |
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| CN (1) | CN203883020U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022170A (en) * | 2014-05-26 | 2014-09-03 | 无锡中能晶科新能源科技有限公司 | Polycrystalline silicon film solar cell |
-
2014
- 2014-05-26 CN CN201420271414.3U patent/CN203883020U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022170A (en) * | 2014-05-26 | 2014-09-03 | 无锡中能晶科新能源科技有限公司 | Polycrystalline silicon film solar cell |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141015 Termination date: 20160526 |