CN206271724U - A kind of two-sided crystal-silicon solar cell based on Si/TiOx hetero-junctions - Google Patents
A kind of two-sided crystal-silicon solar cell based on Si/TiOx hetero-junctions Download PDFInfo
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- CN206271724U CN206271724U CN201621054523.5U CN201621054523U CN206271724U CN 206271724 U CN206271724 U CN 206271724U CN 201621054523 U CN201621054523 U CN 201621054523U CN 206271724 U CN206271724 U CN 206271724U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
One kind is based on Si/TiOxThe two-sided crystal-silicon solar cell of hetero-junctions.Including preceding electrode, TiOxLayer, crystalline silicon absorbed layer, p-type crystalline silicon heavily doped layer, passivation layer, metal gate-shaped electrode.Its structure is followed successively by since side to light：Preceding electrode, TiOxLayer, crystalline silicon absorbed layer, p-type crystalline silicon heavily doped layer, passivation layer, metal gate-shaped electrode.The TiO that side to light is adulterated using N-shapedxHetero-junctions is formed with crystalline silicon, and the back side uses the conventional crystal silicon preparation technology based on diffusion.TiOxWell passivated silicon chip surface and good hetero-junctions can be formed with silicon, help to increase the open-circuit voltage and conversion efficiency of hetero-junction solar cell.The traditional crystalline silicon preparation technology in the back side can make full use of existing crystal-silicon solar cell production equipment.Bilateral structure can make full use of sunshine, increase actual power generation, reduce photovoltaic generation cost.
Description
Technical field
The utility model belongs to solar cell field, falls within field of semiconductor devices, is related to the structure of silicon solar cell.
Background technology
Crystal-silicon solar cell is the important solar cell of a class, and its yield occupies the big of current solar cell total output
Part share.With the progress of technique, the homojunction crystal-silicon solar cell of diffusion technique preparation its opto-electronic conversion is currently based on
Efficiency gradually approaches the limit.And heterojunction solar battery can make full use of work function and energy band position between two kinds of different semiconductors
The difference put, can strengthen built in field intensity, so as to improve not increasing on the premise of Carrier recombination inside solar cell
The photoelectric transformation efficiency of solar cell.Therefore, the crystal-silicon solar cell based on hetero-junctions is expected to surmount homojunction in efficiency
Crystal silicon cell and turn into the main flow of following solar cell.
The crystal silicon heterojunction solar battery of current comparative maturity is the HIT batteries based on amorphous silicon/crystalline silicon heterojunction
（Typical structure is ITO/ α-Si (p)/α-Si (i)/c-Si/ α-Si (i)/α-Si (n)/ITO）.However, the production of HIT batteries
There is larger difference with the production technology and equipment of traditional silicon solar cell in technique and equipment.If from conventional crystal silicon solar cell
The production of HIT solar cells is turned to, current production equipment will be wasted.Further, since being needed in the production of HIT solar cells
Expensive vacuum equipment, the investment of same size production line is the several times of conventional crystal silicon solar cell production line.These are one
Determine to be hindered in degree the development of HIT solar cells.
In fact, in addition to non-crystalline silicon, can also effectively be passivated silicon face in the presence of other and the material of high-quality hetero-junctions is formed with silicon
Material.In addition, the structure of crystal silicon heterojunction solar battery is also not only limited to the structure of HIT solar cells.If can select suitable
Material and device architecture, and can be applicable（Or part is applicable）Set in traditional homojunction crystal-silicon solar cell production
It is standby, then the photoelectric transformation efficiency of crystal-silicon solar cell can be improved, the overlapping investment to production equipment is avoided again.This is to crystal
The production of silicon solar cell has larger practical significance.
Utility model content
The purpose of this utility model is to propose a kind of crystal silicon heterojunction solar battery of new construction.
A kind of crystal silicon heterojunction solar battery of new construction described in the utility model, including preceding electrode, TiOxLayer, crystalline substance
Body silicon absorbed layer, p-type crystalline silicon heavily doped layer, passivation layer, metal gate-shaped electrode.Its structure is followed successively by since side to light：Before
Electrode, TiOxLayer, crystalline silicon absorbed layer, p-type crystalline silicon heavily doped layer, passivation layer, metal gate-shaped electrode.
Described TiOxLayer adulterates for N-shaped.
Described crystalline silicon absorbed layer is that N-shaped or p-type are adulterated.
The surface of described crystalline silicon absorbed layer silicon chip needs two-sided making herbs into wool to reduce surface reflectivity.
Described p-type crystalline silicon heavily doped layer is obtained from diffusion technique to silicon chip back side diffused p-type doped chemical.
Described preceding electrode includes transparency conducting layer and metal gate-shaped electrode, while can be in transparency conducting layer and metal palisade
Reflected with further reducing surface using antireflection layer on electrode.
Described passivation layer is Al2O3Or Al2O3/SiNxMixed structure.
The TiO that the utility model is adulterated using N-shapedxHetero-junctions is formed with crystalline silicon, with depositing Ti OxOne side as the sun
The side to light of battery, and the back side prepares p-type heavily doped layer using conventional diffusion technique.In the TiO of surface of crystalline silicon depositionxLayer can
To be effectively passivated silicon chip surface, the boundary defect density of states is reduced.TiOxThe a little higher than silicon of conduction band positions conduction band（<0.3eV）And
Valence band of the valence band location far below silicon（>2.0eV）, the conduction band rank for being formed contribute to strengthen Si/TiOxThe built-in electricity of hetero-junctions
, and valence band rank can suppress dark current or reverse saturation current, this contributes to solar cell to produce open-circuit voltage high.In addition
TiOxLayer can be formed to surface of crystalline silicon and is passivated, and add Si/TiOxThe effect of heterojunction field passivation, can hinder in Si/TiOxBoundary
Photo-generated carrier is compound at face, and this is conducive to improving the open-circuit voltage and short circuit current of solar cell.The back side is using diffusion work
Skill prepares p-type heavily doped layer, can form effective back of the body electric field, improves open-circuit voltage and suppresses answering for photo-generated carrier at back surface
Close.Outside the p-type heavily doped layer of cell backside, SiN is further depositedx/Al2O3Passivation layer simultaneously prepares metal grid lines, and light is from the back of the body
Face can be also incided inside solar cell, can effectively utilize the irreflexive sunshine of surrounding environment, increase actual power generation.
In sum, the utility model proposed based on Si/TiOxThe crystal-silicon solar cell of hetero-junctions can improve crystalline substance
Body silicon solar cell conversion efficiency, increases solar module actual power generation, reduces photovoltaic generation cost.
The silicon/crystalline silicon heterogenous junction battery of new construction that the utility model is proposed, can have crystal-silicon solar cell high
Open-circuit voltage and short circuit current, so that with photoelectric transformation efficiency higher.The crystal silicon heterojunction that the utility model is proposed
Battery can be produced on the basis of existing crystal-silicon solar cell production line by increasing a small amount of equipment, so as to reduce set
The input of standby aspect.In addition, the bilateral structure of silicon/crystalline silicon heterogenous junction battery that the utility model is proposed can be utilized more fully
Sunshine, increases actual power generation, reduces photovoltaic generation cost.
Brief description of the drawings
Accompanying drawing 1 is the utility model solar battery structure schematic diagram.Wherein, 1 is preceding electrode；2 is TiOx layers；3 is crystal
Silicon absorbed layer；4 is p-type crystalline silicon heavily doped layer；5 is passivation layer；6 is metal gate-shaped electrode.
Specific embodiment
The utility model will be described further by following examples.
Embodiment 1.
（1）Using n-type silicon chip as crystalline silicon absorbed layer 3, silicon chip is tentatively cleaned, two-sided making herbs into wool.
（2）Using diffusion technique p-type crystalline silicon heavily doped layer 4 is prepared in silicon chip back side.
（3）Backside deposition Al2O3Passivation layer 5, then prepares Ag metals gate-shaped electrode 6.
（4）Secondary cleaning is carried out to front side of silicon wafer.
（5）In front side of silicon wafer TiO is prepared using aldxLayer 2.
（6）In TiOxTransparent conductive layer and Ag metal grid lines are deposited on layer 2, electrode 1 before preparing.
Embodiment 2.
（1）Using p-type silicon chip as crystalline silicon absorbed layer 3, silicon chip is tentatively cleaned, two-sided making herbs into wool.
（2）Back side p-type crystalline silicon heavily doped layer 4 is prepared using ion implantation technology.
（3）Backside deposition Al2O3/SiNxPassivation layer 5, then prepares Cu metals gate-shaped electrode 6.
（4）Secondary cleaning is carried out to front side of silicon wafer.
（5）In front side of silicon wafer TiO is prepared using chemical vapor depositionxLayer 2.
（6）In TiOxTransparent conductive layer and Ag metal grid lines are deposited on layer 2, electrode 1 before preparing.
Claims (8)
1. it is a kind of to be based on Si/TiOxThe two-sided crystal-silicon solar cell of hetero-junctions, it is characterized in that including preceding electrode, TiOxLayer, crystal
Silicon absorbed layer, p-type crystalline silicon heavily doped layer, passivation layer, metal gate-shaped electrode；Its structure is followed successively by since side to light：Preceding electricity
Pole, TiOxLayer, crystalline silicon absorbed layer, p-type crystalline silicon heavily doped layer, passivation layer, metal gate-shaped electrode.
2. two-sided crystal-silicon solar cell according to claim 1, it is characterized in that described TiOxLayer adulterates for N-shaped.
3. two-sided crystal-silicon solar cell according to claim 1, it is characterized in that described crystalline silicon absorbed layer be N-shaped or
P-type is adulterated.
4. two-sided crystal-silicon solar cell according to claim 1, it is characterized in that described crystalline silicon absorbed layer silicon chip
Surface needs two-sided making herbs into wool to reduce surface reflectivity.
5. two-sided crystal-silicon solar cell according to claim 1, it is characterized in that described p-type crystalline silicon heavily doped layer by
Diffusion technique is obtained to silicon chip back side diffused p-type doped chemical.
6. two-sided crystal-silicon solar cell according to claim 1, it is characterized in that described preceding electrode includes electrically conducting transparent
Layer and metal gate-shaped electrode.
7. two-sided crystal-silicon solar cell according to claim 6, it is characterized in that in transparency conducting layer and metal palisade electricity
Antireflection layer is used on extremely.
8. two-sided crystal-silicon solar cell according to claim 1, it is characterized in that described passivation layer is Al2O3Or Al2O3/
SiNxMixed structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621054523.5U CN206271724U (en) | 2016-09-14 | 2016-09-14 | A kind of two-sided crystal-silicon solar cell based on Si/TiOx hetero-junctions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621054523.5U CN206271724U (en) | 2016-09-14 | 2016-09-14 | A kind of two-sided crystal-silicon solar cell based on Si/TiOx hetero-junctions |
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| Publication Number | Publication Date |
|---|---|
| CN206271724U true CN206271724U (en) | 2017-06-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621054523.5U Withdrawn - After Issue CN206271724U (en) | 2016-09-14 | 2016-09-14 | A kind of two-sided crystal-silicon solar cell based on Si/TiOx hetero-junctions |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449845A (en) * | 2016-09-14 | 2017-02-22 | 南昌大学 | Si/TiOx heterojunction-based double-sided crystalline silicon solar cell |
| CN110828314A (en) * | 2018-08-13 | 2020-02-21 | 西安电子科技大学 | Based on Al2O3/SiNxDiamond field effect transistor with double-layer gate dielectric and preparation method thereof |
-
2016
- 2016-09-14 CN CN201621054523.5U patent/CN206271724U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449845A (en) * | 2016-09-14 | 2017-02-22 | 南昌大学 | Si/TiOx heterojunction-based double-sided crystalline silicon solar cell |
| CN106449845B (en) * | 2016-09-14 | 2018-05-04 | 南昌大学 | One kind is based on Si/TiOxThe two-sided crystal-silicon solar cell of hetero-junctions |
| CN110828314A (en) * | 2018-08-13 | 2020-02-21 | 西安电子科技大学 | Based on Al2O3/SiNxDiamond field effect transistor with double-layer gate dielectric and preparation method thereof |
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| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20170620 Effective date of abandoning: 20180504 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20170620 Effective date of abandoning: 20180504 |