CN102969368B - Electrode structure of solar cell piece - Google Patents
Electrode structure of solar cell piece Download PDFInfo
- Publication number
- CN102969368B CN102969368B CN201210525026.9A CN201210525026A CN102969368B CN 102969368 B CN102969368 B CN 102969368B CN 201210525026 A CN201210525026 A CN 201210525026A CN 102969368 B CN102969368 B CN 102969368B
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- Prior art keywords
- electrode
- gate line
- main gate
- solar battery
- electrode structure
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- 238000000034 method Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 210000004027 cell Anatomy 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical compound Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses an electrode structure of a solar cell piece. The electrode structure comprises a back electrode (4) and a front grid electrode, wherein the back electrode (4) is located on the back of the solar cell piece; the front grid electrode is located on the front of the solar cell piece; the front grid electrode comprises four major grid lines (1) parallel to each other and a plurality of auxiliary grid lines (3) vertical to the major grid lines (1); two of the major grid lines (1) are located at two sides respectively and the other two major grid lines are located in the centre; and an interval (2) between the two middle major grid lines (1) is 0.2-2mm. According to the electrode structure of the solar cell piece, a plurality of independent generating units are arranged; and furthermore, the independent units can be used in parallel connection or alone.
Description
Technical field
The present invention relates to field of photoelectric technology, particularly relate to a kind of electrode structure of solar battery sheet.
Background technology
Along with the day of global energy is becoming tight, solar energy with pollution-free, the market space is large etc., and exclusive advantage is in widespread attention.Photovoltaic generation has safe and reliable, the advantage such as noiseless, failure rate is low, and solar cell is the critical piece in photovoltaic power generation technology, solar energy being converted into electric energy.
The part such as the P-type layer that common crystal silicon solar energy battery is made up of backplate, semi-conducting material, N-type layer, P-N knot, antireflection film, positive gate electrode forms.When solar irradiation is mapped to solar cell surface, antireflection film and suede structure effectively can reduce the light reflection loss of battery surface.After semiconductor structure in solar cell absorbs solar energy.Excite and produce electronics, hole pair, electronics, hole tie built-in field separately to by the inner P-N of semiconductor, and electron stream enters N district, hole flows into P district, form photoproduction electric field, if can the positive and negative electrode of battery be connected with external circuit very much by crystalline silicon, in external circuit, just have photogenerated current to pass through.
The crystal silicon solar energy battery battery of current majority adopts P-type silicon sheet, P-N knot is formed after phosphorus diffusion, P-type silicon makes back electrode and back surface field, makes positive gate electrode in the N face diffuseed to form, the photovoltaic effect of whole devices use P-N knot carrys out work.Two main gate line are generally adopted for the monocrystalline silicon of 125mm × 125mm or the positive gate electrode of polycrystal silicon cell, three main gate line are risen to for the monocrystalline silicon of 156mm × 156mm or the positive gate electrode of polycrystal silicon cell.And then the secondary grid line of the even of some and parallel distribution is added perpendicular to the both sides of main gate line.The electric current of crystal silicon solar energy battery generation is by secondary grid line and main gate line mutual conduction under light illumination, and main gate line forms the negative electrode of battery, and electric current converges in main gate line and derives.But it is not enough that the electric current collection mode of this battery also exists lower root, namely can only unify generating, only have a kind of supply power mode, when power demands is not enough, often cause waste.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of electrode structure with the solar battery sheet of multiple Independent Power Generation unit, each several part separate unit can merge use after parallel connection, also can use as independent generator unit.
The technical scheme realizing the object of the invention is: a kind of electrode structure of solar battery sheet, comprise back electrode and positive gate electrode, back electrode is distributed in the back side of solar battery sheet, positive gate electrode is distributed in the front of solar battery sheet, positive gate electrode comprises the main gate line and Duo Gen that are parallel to each other and the perpendicular secondary grid line of main gate line, and main gate line has four, and wherein two are arranged in both sides, other two are arranged in centre, and interval between middle two main gate line wide be 0.2mm ~ 2mm.
Further, described back electrode is made up of four parallel lines, and wherein two are arranged in both sides, and other two are arranged in centre, and interval between middle two back electrodes wide be 0.2mm ~ 2mm.
Further, the width of described main gate line is 0.5mm ~ 2mm.
After have employed technique scheme, main gate line have employed four, wherein two are arranged in both sides, other two are arranged in centre, and interval between middle two main gate line wide be 0.2mm ~ 2mm, be that battery is divided into left and right two parts by a formant with two main grids like this, battery front side left and right two parts electrode is not connected mutually, independently can carry out electric current collection.Also by component process, two parts parallel connection in left and right can be used, avoid waste during power demands deficiency.
Accompanying drawing explanation
Fig. 1 is main TV structure schematic diagram of the present invention;
Fig. 2 is backsight structural representation of the present invention.
Be labeled as in figure: 1, main gate line, 2, interval between main gate line, 3, secondary grid line, 4, back electrode, 5, interval between back electrode, 6, cell piece, 7, back surface field.
Embodiment
In order to make content of the present invention more easily be clearly understood, below according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation,
As shown in Figure 1, a kind of electrode structure of solar battery sheet, comprise back electrode 4 and positive gate electrode, back electrode 4 is distributed in the back side of solar battery sheet, and positive gate electrode is distributed in the front of solar battery sheet, and positive gate electrode comprises the main gate line 1 and Duo Gen that are parallel to each other and the perpendicular secondary grid line 3 of main gate line 1, main gate line 1 has four, wherein two are arranged in both sides, and other two are arranged in centre, and interval 2 between middle two main gate line 1 wide be 0.2mm ~ 2mm.The width of main gate line 1 is 0.5mm ~ 2mm.
As shown in Figure 2, described back electrode 4 is made up of four parallel lines, and wherein two are arranged in both sides, and other two are arranged in centre, and interval 5 between middle two back electrodes 4 wide be 0.2mm ~ 2mm.
The electrode making solar battery sheet 6 can adopt the method for any making electrodes such as silk screen printing, evaporation, sputtering, plating, spraying, in the present embodiment, adopts the mode of silk screen printing to make back surface field 7, back electrode 4 and positive gate electrode.First choose the p type single crystal silicon sheet be up to the standards, specification is 156mm × 156mm, through chemical cleaning and surface wool manufacturing to form pyramid structure on monocrystalline silicon piece, increases the absorption of light, improves short circuit current and the conversion efficiency of battery; The crystal silicon layer utilizing the technique such as High temperature diffusion or ion implantation to produce N-type on p type single crystal silicon sheet, so just, form P-N junction structure, then the diffusion layer at edge is removed through plasma etching, the phosphorosilicate glass layer diffuseed to form is removed by chemical corrosion, deposit silicon nitride anti-reflection film, described silicon nitride anti-reflection film can reduce the light emissivity of silicon chip surface, utilize hydrionic one-tenth key to strengthen the passivation effect in silicon chip surface and body simultaneously, reduce the compound of charge carrier, finally utilize silk screen printing to make back electrode 4 and positive gate electrode.
In the present embodiment, first adopt screen printing mode printing back electrode 4, back electrode 4 is sintered by silver-colored aluminium paste and forms.Again in the back surface field 7 of the back up solar cell of described solar battery sheet 6.In the present embodiment, back electrode has 4.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. the electrode structure of a solar battery sheet, comprise back electrode (4) and positive gate electrode, back electrode (4) is distributed in the back side of solar battery sheet, positive gate electrode is distributed in the front of solar battery sheet, positive gate electrode comprises the main gate line (1) that is parallel to each other and many secondary grid lines (3) perpendicular with main gate line (1), it is characterized in that: main gate line (1) has four, wherein two are arranged in both sides, other two are arranged in centre, and interval (2) between middle two main gate line (1) wide be 0.2mm ~ 2mm, be that battery is divided into left and right two parts by a formant with two main grids, battery front side left and right two parts electrode is not connected mutually, independently can carry out electric current collection, or by component process, two parts parallel connection in left and right is used.
2. the electrode structure of solar battery sheet according to claim 1, it is characterized in that: described back electrode (4) is made up of four parallel lines, wherein two are arranged in both sides, other two are arranged in centre, and interval (5) between middle two back electrodes (4) wide be 0.2mm ~ 2mm.
3. the electrode structure of solar battery sheet according to claim 2, is characterized in that: the width of described main gate line (1) is 0.5mm ~ 2mm.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210525026.9A CN102969368B (en) | 2012-12-10 | 2012-12-10 | Electrode structure of solar cell piece |
| JP2015546816A JP2016503959A (en) | 2012-12-10 | 2013-09-25 | Solar cell slice electrode structure |
| PCT/CN2013/084165 WO2014090009A1 (en) | 2012-12-10 | 2013-09-25 | Electrode structure of solar cell plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210525026.9A CN102969368B (en) | 2012-12-10 | 2012-12-10 | Electrode structure of solar cell piece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102969368A CN102969368A (en) | 2013-03-13 |
| CN102969368B true CN102969368B (en) | 2015-06-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210525026.9A Active CN102969368B (en) | 2012-12-10 | 2012-12-10 | Electrode structure of solar cell piece |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2016503959A (en) |
| CN (1) | CN102969368B (en) |
| WO (1) | WO2014090009A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969368B (en) * | 2012-12-10 | 2015-06-10 | 常州天合光能有限公司 | Electrode structure of solar cell piece |
| CN103606570B (en) * | 2013-11-21 | 2017-01-04 | 英利集团有限公司 | Solaode |
| CN103606575B (en) * | 2013-11-21 | 2016-03-23 | 英利集团有限公司 | Solar cell |
| EP3480860B1 (en) | 2016-06-30 | 2020-11-11 | BYD Company Limited | Photovoltaic cell assembly |
| CN110137289B (en) * | 2018-02-08 | 2024-05-10 | 国家电投集团新能源科技有限公司 | Metal gate line electrode of silicon heterojunction solar cell and silicon heterojunction solar cell |
| CN109585590A (en) * | 2019-01-21 | 2019-04-05 | 南通苏民新能源科技有限公司 | A kind of solar battery sheet, component and production method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202275839U (en) * | 2011-09-06 | 2012-06-13 | 扬州天华光电科技有限公司 | Solar cell |
| CN202957262U (en) * | 2012-12-10 | 2013-05-29 | 常州天合光能有限公司 | Electrode structure of solar cell |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11298019A (en) * | 1998-04-07 | 1999-10-29 | Sharp Corp | Solar battery and manufacture of the solar battery |
| JP2002299666A (en) * | 2001-03-29 | 2002-10-11 | Kanegafuchi Chem Ind Co Ltd | See-through-type thin-film solar cell module |
| JP3805299B2 (en) * | 2002-11-26 | 2006-08-02 | 京セラ株式会社 | Solar cell element and manufacturing method thereof |
| JP2008135655A (en) * | 2006-11-29 | 2008-06-12 | Sanyo Electric Co Ltd | Solar battery module, manufacturing method therefor, and solar battery cell |
| JP5368022B2 (en) * | 2008-07-17 | 2013-12-18 | 信越化学工業株式会社 | Solar cell |
| CN102615954A (en) * | 2012-04-16 | 2012-08-01 | 中利腾晖光伏科技有限公司 | Solar battery positive electrode screen |
| CN102664199B (en) * | 2012-05-16 | 2015-04-08 | 中利腾晖光伏科技有限公司 | Solar cell applicable to solar simulator tester, and manufacturing method thereof |
| CN102969368B (en) * | 2012-12-10 | 2015-06-10 | 常州天合光能有限公司 | Electrode structure of solar cell piece |
-
2012
- 2012-12-10 CN CN201210525026.9A patent/CN102969368B/en active Active
-
2013
- 2013-09-25 JP JP2015546816A patent/JP2016503959A/en active Pending
- 2013-09-25 WO PCT/CN2013/084165 patent/WO2014090009A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202275839U (en) * | 2011-09-06 | 2012-06-13 | 扬州天华光电科技有限公司 | Solar cell |
| CN202957262U (en) * | 2012-12-10 | 2013-05-29 | 常州天合光能有限公司 | Electrode structure of solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102969368A (en) | 2013-03-13 |
| WO2014090009A1 (en) | 2014-06-19 |
| JP2016503959A (en) | 2016-02-08 |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wellington.Puel J Inventor after: Gao Jifan Inventor after: Sheng Jian Inventor before: Wellington.Puel J Inventor before: Sheng Jian |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar limited Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: Changzhou Trina Solar Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: Trina Solar Limited by Share Ltd Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar limited |