CN201699054U - SMD light-emitting diode - Google Patents
SMD light-emitting diode Download PDFInfo
- Publication number
- CN201699054U CN201699054U CN2010202166371U CN201020216637U CN201699054U CN 201699054 U CN201699054 U CN 201699054U CN 2010202166371 U CN2010202166371 U CN 2010202166371U CN 201020216637 U CN201020216637 U CN 201020216637U CN 201699054 U CN201699054 U CN 201699054U
- Authority
- CN
- China
- Prior art keywords
- rack
- shaped cavity
- emitting diode
- reflective layer
- metal reflective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses a SMD light-emitting diode (SMD LED), especially an LED whose inner wall of a rack reflect cup is coated with a metal reflective layer. The SMD LED comprises a rack and an insulating layer placed on the rack. The utility model is characterized in that a cup-shaped cavity is formed by combining the rack and the insulating layer; a chip is fixed in the cup-shaped cavity by a solid crystal glue; the two electrodes of the chip are electrically connected to two gold threads considered as a conductor; a photoelectric glue is disposed in the cup-shaped cavity; the inner wall is coated with a metal reflective layer. As the metal reflective layer has high reflective efficiency and good combination with the photoelectric glue and good heat conduction, the utility model is advantageous in that with the arrangement of a metal reflective layer, the reflection of a rack insulating layer is not required, and producing cost can be reduced by producing the rack insulating layer with materials of low cost; light producing efficiency increases by 10%-30%; thermal resistance is small, service life is long and cost is low.
Description
Technical field
The utility model relates to a kind of patch light-emitting diode, refers in particular to the light-emitting diode that a kind of support reflector inner wall surface is coated with the metal reflective layer.
Background technology
The support of existing TOP type patch light-emitting diode is made up of metal sheet and polyphtalamide resin (being called for short PPA), PPA is injection molded into a bowl cup-shaped, the wide part of light-emitting diode chip for backlight unit reflexes to the outside by the cup inner wall surface of PPA, what known TOP type patch light-emitting diode was filled in the PPA cup is electron level silica gel, the light-emitting diode of Zhi Zuoing is because the whiteness of PPA is limited in this way, there are a lot of light to be absorbed by PPA, light-emitting diode can cause the light-emitting diode bright dipping to descend by xanthochromia through the back PPA that works long hours, and organic substance adhesions such as existing electron level silica gel and most PPA are not strong, cause the junction of PPA and silica gel to produce the crack, moisture or pernicious gas will slowly enter internal stent from the crack metal sheet place causes the metal sheet oxidation of support to turn black, cause the amount of light of light-emitting diode to descend at last, glow color produces drift (particularly white light-emitting diode).
Summary of the invention
The utility model is at deficiency of the prior art, proposed a kind of patch light-emitting diode, can simply, reasonably handle support, and the light extraction efficiency of light-emitting diode is promoted, and allow silica gel combine with support well, effectively prolong the life-span of light-emitting diode.
The utility model is achieved by following technical proposals:
A kind of patch light-emitting diode, comprise support, place the insulating barrier on the support, support and insulating barrier form a bowl cup-shaped cavity, chip is fixed in bowl cup-shaped cavity by crystal-bonding adhesive, two electrodes of chip electrically connect with two money as electric conductor, and photoelectric glue is arranged in bowl cup-shaped cavity, it is characterized in that: be provided with the metal reflective layer in bowl cup-shaped cavity inner wall surface.
As preferably, in bowl cup-shaped cavity inner wall surface, metal reflective layer material can be metal or metal alloy to this metal reflective layer by vacuum plating.
As preferably, above-mentioned a kind of patch light-emitting diode, described photoelectric glue 1 can be silica gel, silicones, epoxy resin and the silica gel, silicones and the epoxy resin that add fluorescent material.
As preferably, above-mentioned a kind of patch light-emitting diode, described support insulating barrier 5, material can be PPA, glass, pottery.
As optimal selection, above-mentioned a kind of patch light-emitting diode, described metal reflective layer 6, material can be metal, metal alloy.
The beneficial effects of the utility model: adopt the light-emitting diode that metal reflective layer rack making arranged, combine well owing to metal reflective layer reflector efficiency height and with photoelectric glue, the heat conduction of metal reflective layer is good, increase behind the metal reflective layer that to the support insulating barrier reflective requirement has not had so can make the insulating barrier of support of material cheaply, thus with the patch light-emitting diode that has the encapsulation of metal reflective layer support than the high 10%-30% of patch light-emitting diode light extraction efficiency that encapsulates with ordinary stent, thermal resistance is little, the life-span is long, cost is low.
Below in conjunction with the drawings and specific embodiments the utility model is specified:
Description of drawings
Fig. 1 is a cross-sectional view of the present utility model.
Number in the figure: 1 photoelectric glue, 2 chips, 3 gold threads, 4 supports, 5 insulating barriers, 6 metal reflective layers, 7 crystal-bonding adhesives.
Embodiment
As shown in Figure 1, patch light-emitting diode of the present utility model comprises support 4, places the insulating barrier 5 on the support 4, and insulating barrier 5 materials can be PPA, glass or pottery.Support 4 forms a bowl cup-shaped cavity with insulating barrier 5, chip 2 is fixed in bowl cup-shaped cavity by crystal-bonding adhesive 7, two electrodes of chip 2 electrically connect with two money 3 as electric conductor, be provided with metal reflective layer 6 in bowl cup-shaped cavity inner wall surface, in bowl cup-shaped cavity inner wall surface, metal reflective layer 6 material can be metal or metal alloy to this metal reflective layer 6 by vacuum plating.Photoelectric glue 1 is arranged in bowl cup-shaped cavity, and photoelectric glue 1 can be silica gel, silicones, epoxy resin, perhaps for adding silica gel, silicones, the epoxy resin of fluorescent material.
Packaged type of the present utility model is identical with conventional stamp-mounting-paper diode packaged type, only just change the inner surface structure of original support, at support bowl cup inner wall surface vacuum plating layer of metal reflector layer, with this support by normal packaging technology solid brilliant (crystal-bonding adhesive 7 is put chip 2 then on the point on crystal-bonding adhesive 7 in support), solid brilliant baking, bonding wire (at the gold thread 3 of burn-oning between chip and the backbone metal sheet material), put glue (in support bowl cup, clicking and entering photoelectric glue 1), put glue baking, test grading, tape package.
Certainly the utility model also can have other various embodiments; under the situation that does not deviate from the utility model spirit and essence thereof; those of ordinary skill in the art can make various corresponding changes and distortion according to the utility model, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the utility model.
Claims (2)
1. patch light-emitting diode, comprise support, place the insulating barrier on the support, support and insulating barrier form a bowl cup-shaped cavity, chip is fixed in bowl cup-shaped cavity, chip and money electrically connect, and photoelectric glue is arranged in bowl cup-shaped cavity, it is characterized in that: be provided with the metal reflective layer in bowl cup-shaped cavity inner wall surface.
2. a kind of patch light-emitting diode according to claim 1 is characterized in that: the metal reflective layer by vacuum plating in bowl cup-shaped cavity inner wall surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202166371U CN201699054U (en) | 2010-06-04 | 2010-06-04 | SMD light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202166371U CN201699054U (en) | 2010-06-04 | 2010-06-04 | SMD light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201699054U true CN201699054U (en) | 2011-01-05 |
Family
ID=43400300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202166371U Expired - Lifetime CN201699054U (en) | 2010-06-04 | 2010-06-04 | SMD light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201699054U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185078A (en) * | 2011-03-30 | 2011-09-14 | 深圳雷曼光电科技股份有限公司 | Outdoor surface mounted light emitting diode (LED) packaging structure and packaging method |
| CN102324459A (en) * | 2010-10-15 | 2012-01-18 | 广东昭信灯具有限公司 | Light-emitting diode (LED) lamp package structure and preparation method thereof |
| CN102760816A (en) * | 2011-04-26 | 2012-10-31 | 展晶科技(深圳)有限公司 | LED (light emitting diode) packaging structure and manufacturing method thereof |
-
2010
- 2010-06-04 CN CN2010202166371U patent/CN201699054U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324459A (en) * | 2010-10-15 | 2012-01-18 | 广东昭信灯具有限公司 | Light-emitting diode (LED) lamp package structure and preparation method thereof |
| CN102185078A (en) * | 2011-03-30 | 2011-09-14 | 深圳雷曼光电科技股份有限公司 | Outdoor surface mounted light emitting diode (LED) packaging structure and packaging method |
| CN102185078B (en) * | 2011-03-30 | 2013-02-06 | 深圳雷曼光电科技股份有限公司 | Outdoor surface mounted light emitting diode (LED) packaging structure and packaging method |
| CN102760816A (en) * | 2011-04-26 | 2012-10-31 | 展晶科技(深圳)有限公司 | LED (light emitting diode) packaging structure and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110105 |
|
| CX01 | Expiry of patent term |