CN102324459A - Light-emitting diode (LED) lamp package structure and preparation method thereof - Google Patents
Light-emitting diode (LED) lamp package structure and preparation method thereof Download PDFInfo
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- CN102324459A CN102324459A CN2011103097448A CN201110309744A CN102324459A CN 102324459 A CN102324459 A CN 102324459A CN 2011103097448 A CN2011103097448 A CN 2011103097448A CN 201110309744 A CN201110309744 A CN 201110309744A CN 102324459 A CN102324459 A CN 102324459A
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Abstract
The invention provides a light-emitting diode (LED) lamp package structure and a preparation method thereof. The structure comprises a supporting frame, a crystal grain, a solid crystal adhesive and a solid crystal site, wherein the solid crystal site is positioned on the bottom surface of the supporting frame, and the crystal grain is fixed on the solid crystal site through the solid crystal adhesive coated on the solid crystal site; and a high-reflectivity nano glass layer subjected to surface coating treatment is coated on the surface of the supporting frame.
Description
Technical field
The present invention relates to the radiating treatment technology of optical crystal, more specifically, relate to a kind of LED lamp encapsulation structure and preparation method thereof.
Background technology
The luminous component of LED is the pn knot tube core that is made up of p type and n N-type semiconductor N, and minority carrier and majority carrier compound tense when injecting the pn knot will send visible light, ultraviolet light or near infrared light.But the photon that pn sends in the interface is a non-directional; Promptly identical probability is arranged to all directions emission; Therefore; Be not that all light that tube core produces can discharge, this depends primarily on semi-conducting material quality, tube core structure and geometry, encapsulation internal structure and encapsulating material, and application requirements improves inside and outside the quantum efficiency of LED.
Conventional Φ 5mm type LED encapsulation be with the square tube core bonding of length of side 0.25mm or sintering on lead frame; The positive pole of tube core is through spherical contact point and spun gold; Bonding is that lead links to each other with a pin; Negative pole links to each other through another pin of reflector and lead frame, and its top is with epoxy resin enclosed then.The effect of reflector is the light that send at collection tube core side, interface, in the deflection of expectation, launches.The epoxy resin that seal at the top is made definite shape, and several kinds of effects are like this arranged: protection tube core etc. does not receive extraneous the erosion; Take different shapes and material character (mixing or do not mix color dispersing agent), play lens or diffusing lens function, the angle of divergence of control light; The tube core refractive index is relevant with air refraction too big; Cause the inner cirtical angle of total reflection of tube core very little; The light of its active layer generation has only fraction to be removed, and major part is prone at tube core inner through repeatedly reflecting and being absorbed, and is prone to take place total reflection and causes too much light loss; Select for use the epoxy resin of respective indices of refraction to do transition, improve the light outgoing efficient of tube core.Epoxy resin as constituting shell must have moisture-proof, insulating properties, and mechanical strength, refractive index and the transmissivity of tube core being sent light are high.Select the encapsulating material of different refractivity, package geometry is different to the influence of photon effusion efficient, and the angle of luminous intensity distributes also relevant with shape with tube core structure, optical output mode, the used material of package lens.If adopt pointed resin lens, can make light focus on the axis direction of LED, corresponding visual angle is less; If the resin lens at top is circle or plane, its corresponding visual angle will increase.
The internal quantum of LED assembly is exactly the electro-optical efficiency of assembly itself in fact, and the characteristic of main and assembly itself, the base crystalline substance composition of assembly and encapsulating structure etc. are relevant.The taking-up efficient of assembly then refers to the photon that component internal produces, after the absorption of passing through assembly itself, refraction, reflection, and the actual photon number that can measure in the assembly outside.Therefore, refringence and the scattering properties of modular construction etc. of geometry, assembly and encapsulating material that comprised absorption, the assembly of assembly material itself about the factor of taking out efficient.And the product of the taking-up efficient of the internal quantum of assembly and assembly is exactly the illumination effect of whole assembly, just the external quantum efficiency of assembly.Early stage assembly development concentrates on and improves its internal quantum; Main method is to build brilliant structure through improving to build brilliant quality and change; Make electric energy be difficult for converting to heat energy; And then improve the luminous efficiency of LED indirectly, thus the theoretical internal quantum about 70% can be obtained, but such internal quantum is almost near the theoretic limit.
Summary of the invention
For overcoming above-mentioned existing defective, the present invention proposes a kind of LED lamp encapsulation structure and preparation method thereof.
According to an aspect of the present invention, proposed a kind of LED lamp encapsulation structure, having comprised: support, crystal grain, crystal-bonding adhesive and solid brilliant position, wherein, solid brilliant position is positioned on the frame bottom surface, and the crystal-bonding adhesive that passes through coating it on is crystal grain fixedly; The high reflectance nano-glass that this stent surface coated is handled through overlay coating.
Wherein, the high reflectance nano-glass comprises high volatile volatile transparent solvent and the high reflectance nano-glass of handling through overlay coating.Wherein, nano-glass overlay coating type of being polysilane, the thickness of high reflected coat layer is the 10-200 nanometer.Wherein, the nano-glass particle diameter is the 50-300 nanometer.
According to a further aspect in the invention, proposed a kind of preparation method of LED lamp encapsulation structure, having comprised: step 1; Use the direct electronic beam WriteMode to make mask blank, mask blank coating negative photoresist also places the DUV exposure system to carry out the DUV exposure manufacture process, carries out developing manufacture process afterwards; Through reactive ion etching mask blank is carried out etching; Carry out electroforming with nickel-iron alloy plating liquid, carry out the stripping processing procedure then, make metal screen layer to turn over the mould mode again; Step 2 is clicked and entered support or substrate with high reflectance nano-glass solution, after baking, removes solvent, and high reflected coat layer nano-glass is deposited on support or the substrate.
Wherein, in the step 2, the high reflectance nano-glass of handling with high-volatile transparent solvent and overlay coating carries out even high-speed stirred at planetary stirring machine, and its rotating speed is 5000-10000rpm, produces high reflectance nano-glass solution.
Wherein, in the step 2, nano-glass overlay coating type of being polysilane, the thickness of high reflected coat layer is the 10-200 nanometer.
Wherein, step 2 also comprises: step 21, red glue is clicked and entered on the solid brilliant position and second solder joint of support, with point gum machine afterwards through baking; Step 22 is clicked and entered support with high reflectance nano-glass solution with point gum machine, after baking, removes solvent, and high reflected coat layer nano-glass is deposited on the support; Step 23 is removed red glue, recovers the solid brilliant position and second solder joint.
Wherein, in the step 2, the nano-glass particle diameter is the 50-300 nanometer.
The present invention with nano-glass and volatile solvent after, coat on the appropriate location of substrate or support, behind the heated volatile solvent; The nano-glass uniform deposition is in substrate or rack surface; And serve as the superior reflector of character, and prevent light leak, increase external quantum efficiency.
Description of drawings
Fig. 1 is high reflectance nano-glass support or substrate sketch map;
Fig. 2 is the part preparation flow sketch map with white light photonic crystal of nanometer microlens array;
Fig. 3 is high reflectance nano-glass support or basal plate making process sketch map.
As shown in the figure; In order clearly to realize the structure of embodiments of the invention, marked specific structure and device in the drawings, but this is merely the signal needs; Be not that intention is limited to the present invention in this ad hoc structure, device and the environment; According to concrete needs, those of ordinary skill in the art can adjust these devices and environment or revise, and adjustment of being carried out or modification still are included in the scope of accompanying Claim.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment a kind of LED lamp encapsulation structure provided by the invention and preparation method thereof is described in detail.
Wherein, in the following description, with description a plurality of different aspects of the present invention, yet, for the one of ordinary skilled in the art, can only utilize perhaps entire infrastructure more of the present invention or flow process to come embodiment of the present invention.For the definition of explaining, specific number, configuration and order have been set forth, but clearly, in that do not have also can embodiment of the present invention under the situation of these specific detail.In other cases, in order not obscure the present invention, will set forth no longer in detail for some well-known characteristics.
Generally speaking; As the total reflection material, the heated volatile solvent that collocation is fit to is processed nano-glass solution, on solid brilliant position (Die bond pad) and second solder joint (2nd wire bonding pad) of support (Lead Frame) or substrate (Substrate) with the high reflectance nano-glass handled through overlay coating in the present invention; Earlier with red glue protection; Carry out accurate mode of printing with a glue (Dispensing process) or with steel mesh again, high reflectance nano-glass solution is clicked and entered support (in the reflector) or substrate (surface), toast the removal solvent again; Remove red glue afterwards again, obtain the support or the substrate of tool high reflectance.
In the first embodiment of the present invention; As shown in Figure 1, a kind of LED lamp encapsulation structure is provided, this structure is with support or the substrate of high reflectance nano-glass as the total reflection material processed; Comprise support or substrate, crystal grain, crystal-bonding adhesive and solid brilliant position; Wherein, Gu brilliant position is positioned on the frame bottom surface, the crystal-bonding adhesive through coating it on is crystal grain fixedly.
Wherein, this support or substrate surface apply the high reflectance nano-glass of being handled by overlay coating.
This high reflectance nano-glass comprises the high reflectance nano-glass that suitable high-volatile transparent solvent and overlay coating are handled.Nano-glass overlay coating type of being polysilane (Polysilane), (titanium dioxide: thickness TiO2) is the 10-200 nanometer to high reflected coat layer, and the nano-glass particle diameter is the 50-300 nanometer.
Wherein, arrange metal screen layer in support or the substrate.
In another embodiment of the present invention, the preparation method of this structure is provided, comprises: step 1; Use the direct electronic beam WriteMode to make mask blank, mask blank coating negative photoresist also places the DUV exposure system to carry out the DUV exposure manufacture process, carries out developing manufacture process afterwards; Through reactive ion etching mask blank is carried out etching; Carry out electroforming with nickel-iron alloy plating liquid, carry out the stripping processing procedure then, make metal screen layer to turn over the mould mode again; Step 2 is clicked and entered support or substrate with high reflectance nano-glass solution, after baking, removes solvent, and high reflected coat layer nano-glass is deposited on support or the substrate.
Below this method is described in detail.Wherein, step 1 uses the direct electronic beam WriteMode to make mask blank; Mask blank coating negative photoresist also places the DUV exposure system to carry out the DUV exposure manufacture process; Carry out developing manufacture process afterwards, mask blank is carried out etching, carry out electroforming with nickel-iron alloy plating liquid through reactive ion etching; Carry out the stripping processing procedure then, make metal screen layer to turn over the mould mode again;
Wherein, Shown in Fig. 2 A; Use electron-beam direct writing (Electron Beam direct writing) mode on the chromium metal level (Chromiumlayer) of the mask blank (Photo mask) of quartzy (Quartz) material, to carry out pattern (Pattern) and make, the chromium metal layer thickness is the 10-30 nanometer.
Shown in Fig. 2 B and 2C, mask blank (Photo mask) is placed DUV exposure system (Deep Ultraviolet Exposure System) and to being coated with negative photoresist (Negativephoto resist) (SU-8; Thickness is the 0.6-2.0 micron; Use its rotating speed of vacuum rotary coating mode to be 5000-10000rpm; Preceding roasting temperature is 70-120 ℃; Time is 20-50 minute) optical grade corrosion resistant plate (promptly being coated with the mask blank of negative photoresist) carry out DUV exposure manufacture process (exposure energy is 500-1000KJ, and the time for exposure is 0.1-0.8ms);
Shown in Fig. 2 D and 2E, carry out developing manufacture process (naoh concentration: 3-8%, developing time: 10-30 second, temperature: 25-50 ℃) afterwards, carry out reactive ion etching again the optical grade corrosion resistant plate is carried out etching (time: 10-50 second);
Shown in Fig. 2 F; (the ferronickel ratio is 7-9: 3-1) carry out electroforming processing procedure (temperature is 45-70 ℃), shown in Fig. 2 G, carry out stripping processing procedure (naoh concentration: 5-10% with nickel-iron alloy plating liquid afterwards; Developing time: 50-80 second; Temperature: 50-80 ℃), shown in Fig. 2 H, make metallic shield (Metal mask) to turn over the mould mode again.
In step 2, high reflectance nano-glass solution is clicked and entered support or substrate, after baking, remove solvent, high reflected coat layer nano-glass is deposited on support or the substrate.Particularly; Shown in Fig. 3 A; The high reflectance nano-glass of handling with suitable high-volatile transparent solvent (like pure water etc.) and overlay coating carries out even high-speed stirred (High speed stirring) at planetary stirring machine, and its rotating speed is 5000-10000rpm.Nano-glass overlay coating type of being polysilane (Polysilane), and high reflected coat layer (titanium dioxide: thickness TiO2) is the 10-200 nanometer, and the nano-glass particle diameter is the 50-300 nanometer.
Afterwards, shown in Fig. 3 B, red glue (Red Glue) is clicked and entered on the solid brilliant position (Die bond pad) and second solder joint (2nd wire bonding pad) of support or substrate, afterwards through (80-160 ℃ of baking with point gum machine (Dispenser); 10-50 minute).Arrange metal screen layer in support or the substrate.
Afterwards, shown in Fig. 3 C, high reflectance nano-glass solution is clicked and entered support or substrate with point gum machine (Dispenser), through the baking after (50-160 ℃; 10-90 minute) remove solvent, high reflected coat layer nano-glass is deposited on support or the substrate.
Afterwards, shown in Fig. 3 D, remove red glue, recover solid brilliant position (Die bond pad) and second solder joint (2nd wire bonding pad) position.
Afterwards, the crystal grain chip is installed on the solid brilliant position, encapsulates through solid crystalline substance, bonding wire, some glue and beam split color separation.
What should explain at last is; Above embodiment is only in order to describe technical scheme of the present invention rather than the present technique method is limited; The present invention can extend to other modification, variation, application and embodiment on using, and therefore thinks that all such modifications, variation, application, embodiment are in spirit of the present invention and teachings.
Claims (9)
1. LED lamp encapsulation structure comprises: support, crystal grain, crystal-bonding adhesive and solid brilliant position, and wherein, solid brilliant position is positioned on the frame bottom surface, and the crystal-bonding adhesive that passes through coating it on is crystal grain fixedly; It is characterized in that,
The high reflectance nano-glass layer that this stent surface coated is handled through overlay coating.
2. encapsulating structure according to claim 1, wherein, high reflectance nano-glass layer comprises high volatile volatile transparent solvent and the high reflectance nano-glass of handling through overlay coating.
3. encapsulating structure according to claim 2, wherein, nano-glass overlay coating type of being polysilane, the thickness of high reflected coat layer is the 10-200 nanometer.
4. encapsulating structure according to claim 2, wherein, the nano-glass particle diameter is the 50-300 nanometer.
5. the preparation method of a LED lamp encapsulation structure comprises:
Step 1; Use the direct electronic beam WriteMode to make mask blank, mask blank coating negative photoresist also places the DUV exposure system to carry out the DUV exposure manufacture process, carries out developing manufacture process afterwards; Through reactive ion etching mask blank is carried out etching; Carry out electroforming with nickel-iron alloy plating liquid, carry out the stripping processing procedure then, make metal screen layer to turn over the mould mode again;
Step 2 is clicked and entered the support that comprises metal screen layer with high reflectance nano-glass solution, after baking, removes solvent, and high reflected coat layer nano-glass is deposited on the support.
6. method according to claim 5; Wherein, in the step 2, the high reflectance nano-glass of handling with high-volatile transparent solvent and overlay coating carries out even high-speed stirred at planetary stirring machine; Its rotating speed is 5000-10000rpm, produces high reflectance nano-glass solution.
7. method according to claim 6, wherein, in the step 2, nano-glass overlay coating type of being polysilane, the thickness of high reflected coat layer is the 10-200 nanometer.
8. method according to claim 6, wherein, step 2 also comprises:
Step 21 is clicked and entered red glue on the solid brilliant position and second solder joint of support, afterwards through baking with point gum machine;
Step 22 is clicked and entered support with high reflectance nano-glass solution with point gum machine, after baking, removes solvent, and high reflected coat layer nano-glass is deposited on the support;
Step 23 is removed red glue, recovers the solid brilliant position and second solder joint.
9. method according to claim 6, wherein, in the step 2, the nano-glass particle diameter is the 50-300 nanometer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103097448A CN102324459A (en) | 2010-10-15 | 2011-09-30 | Light-emitting diode (LED) lamp package structure and preparation method thereof |
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| CN201010509122.5 | 2010-10-15 | ||
| CN2010105091225A CN102005532A (en) | 2010-10-15 | 2010-10-15 | High-efficiency reflective LED package structure and packaging method thereof |
| CN2011103097448A CN102324459A (en) | 2010-10-15 | 2011-09-30 | Light-emitting diode (LED) lamp package structure and preparation method thereof |
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| CN102324459A true CN102324459A (en) | 2012-01-18 |
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| CN2011103097448A Pending CN102324459A (en) | 2010-10-15 | 2011-09-30 | Light-emitting diode (LED) lamp package structure and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106591777A (en) * | 2017-01-05 | 2017-04-26 | 利亚德光电股份有限公司 | Film plating tool and method of LED display screen |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102034919A (en) * | 2010-10-15 | 2011-04-27 | 陈林 | High-brightness high-power light-emitting diode (LED) and manufacturing method thereof |
| EP3774338B1 (en) * | 2018-04-06 | 2023-07-05 | Poly-Med Inc. | Methods and compositions for photopolymerizable additive manufacturing |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201699054U (en) * | 2010-06-04 | 2011-01-05 | 浙江联众光电科技股份有限公司 | SMD light-emitting diode |
| CN102034919A (en) * | 2010-10-15 | 2011-04-27 | 陈林 | High-brightness high-power light-emitting diode (LED) and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201699054U (en) * | 2010-06-04 | 2011-01-05 | 浙江联众光电科技股份有限公司 | SMD light-emitting diode |
| CN102034919A (en) * | 2010-10-15 | 2011-04-27 | 陈林 | High-brightness high-power light-emitting diode (LED) and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591777A (en) * | 2017-01-05 | 2017-04-26 | 利亚德光电股份有限公司 | Film plating tool and method of LED display screen |
| CN106591777B (en) * | 2017-01-05 | 2019-11-08 | 利亚德光电股份有限公司 | The film coating jig and film plating process of LED display |
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| CN102005532A (en) | 2011-04-06 |
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Application publication date: 20120118 |