CN1959966A - 包括冶金接合的集成电路装置以增强到散热片的热传导 - Google Patents
包括冶金接合的集成电路装置以增强到散热片的热传导 Download PDFInfo
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- CN1959966A CN1959966A CNA2006101395386A CN200610139538A CN1959966A CN 1959966 A CN1959966 A CN 1959966A CN A2006101395386 A CNA2006101395386 A CN A2006101395386A CN 200610139538 A CN200610139538 A CN 200610139538A CN 1959966 A CN1959966 A CN 1959966A
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- integrated circuit
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/235,920 US7327029B2 (en) | 2005-09-27 | 2005-09-27 | Integrated circuit device incorporating metallurigical bond to enhance thermal conduction to a heat sink |
US11/235,920 | 2005-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1959966A true CN1959966A (zh) | 2007-05-09 |
CN1959966B CN1959966B (zh) | 2010-05-12 |
Family
ID=37232419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101395386A Active CN1959966B (zh) | 2005-09-27 | 2006-09-25 | 包括冶金接合的集成电路装置以增强到散热片的热传导 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7327029B2 (zh) |
JP (1) | JP5250193B2 (zh) |
KR (1) | KR101245114B1 (zh) |
CN (1) | CN1959966B (zh) |
GB (2) | GB2474967B (zh) |
TW (2) | TWI336512B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101276795B (zh) * | 2008-04-21 | 2010-04-07 | 日月光半导体制造股份有限公司 | 半导体封装构造 |
CN102110660A (zh) * | 2009-12-29 | 2011-06-29 | 台湾积体电路制造股份有限公司 | 半导体倒装芯片封装及半导体倒装芯片封装的形成方法 |
CN102412219A (zh) * | 2010-09-22 | 2012-04-11 | 星科金朋有限公司 | 具有主动表面热移除的集成电路封装***及其制造方法 |
CN102683322B (zh) * | 2011-03-09 | 2016-07-06 | 三星半导体(中国)研究开发有限公司 | Pop封装结构及其制造方法 |
TWI730391B (zh) * | 2018-08-30 | 2021-06-11 | 台灣積體電路製造股份有限公司 | 晶圓清潔系統及方法 |
TWI732278B (zh) * | 2018-08-31 | 2021-07-01 | 台灣積體電路製造股份有限公司 | 半導體裝置及其製造方法 |
US12051668B2 (en) | 2018-08-31 | 2024-07-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and method of forming the same |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7581994B2 (en) * | 2006-08-10 | 2009-09-01 | The Boeing Company | Method and assembly for establishing an electrical interface between parts |
CN101641785B (zh) * | 2006-11-09 | 2011-07-13 | 怡得乐Qlp公司 | 具有延展层的微电路封装体 |
US7982307B2 (en) * | 2006-11-22 | 2011-07-19 | Agere Systems Inc. | Integrated circuit chip assembly having array of thermally conductive features arranged in aperture of circuit substrate |
US8018052B2 (en) * | 2007-06-29 | 2011-09-13 | Stats Chippac Ltd. | Integrated circuit package system with side substrate having a top layer |
US7880298B2 (en) * | 2007-12-05 | 2011-02-01 | Raytheon Company | Semiconductor device thermal connection |
US8017436B1 (en) | 2007-12-10 | 2011-09-13 | Amkor Technology, Inc. | Thin substrate fabrication method and structure |
US20090166852A1 (en) * | 2007-12-31 | 2009-07-02 | Chuan Hu | Semiconductor packages with thermal interface materials |
US7842541B1 (en) * | 2008-09-24 | 2010-11-30 | Amkor Technology, Inc. | Ultra thin package and fabrication method |
TWI421982B (zh) * | 2008-11-21 | 2014-01-01 | Advanpack Solutions Pte Ltd | 半導體導線元件及其製造方法 |
US8929071B2 (en) * | 2008-12-22 | 2015-01-06 | General Electric Company | Low cost manufacturing of micro-channel heatsink |
US20100175857A1 (en) * | 2009-01-15 | 2010-07-15 | General Electric Company | Millichannel heat sink, and stack and apparatus using the same |
US20110175218A1 (en) | 2010-01-18 | 2011-07-21 | Shiann-Ming Liou | Package assembly having a semiconductor substrate |
US8222745B2 (en) | 2010-01-19 | 2012-07-17 | Lsi Corporation | Integrated heat sink |
US20110186960A1 (en) | 2010-02-03 | 2011-08-04 | Albert Wu | Techniques and configurations for recessed semiconductor substrates |
US8314472B2 (en) | 2010-07-29 | 2012-11-20 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Semiconductor structure comprising pillar |
US8344504B2 (en) | 2010-07-29 | 2013-01-01 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Semiconductor structure comprising pillar and moisture barrier |
US20120188721A1 (en) * | 2011-01-21 | 2012-07-26 | Nxp B.V. | Non-metal stiffener ring for fcbga |
US8536707B2 (en) | 2011-11-29 | 2013-09-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor structure comprising moisture barrier and conductive redistribution layer |
US9605744B2 (en) * | 2012-04-24 | 2017-03-28 | Gkn Sinter Metals, Llc | Dampening assembly and related method of making same |
KR102245003B1 (ko) | 2014-06-27 | 2021-04-28 | 삼성전자주식회사 | 오버행을 극복할 수 있는 반도체 패키지 및 그 제조방법 |
US20160360639A1 (en) * | 2015-06-08 | 2016-12-08 | Advantech Co., Ltd. | Dynamic heat conduction system |
US20170170087A1 (en) * | 2015-12-14 | 2017-06-15 | Intel Corporation | Electronic package that includes multiple supports |
TWI675287B (zh) * | 2018-09-10 | 2019-10-21 | 群光電子股份有限公司 | 加熱散熱模組 |
US12033996B2 (en) | 2019-09-23 | 2024-07-09 | 1372934 B.C. Ltd. | Systems and methods for assembling processor systems |
KR20220030551A (ko) | 2020-09-03 | 2022-03-11 | 삼성전자주식회사 | 반도체 패키지 |
US20220285288A1 (en) * | 2021-03-04 | 2022-09-08 | Intel Corporation | Integrated circuit die package stiffeners of metal alloys having exceptionally high cte |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0810731B2 (ja) * | 1993-02-03 | 1996-01-31 | 日本電気株式会社 | チップキャリア |
JP2734381B2 (ja) * | 1994-10-06 | 1998-03-30 | 日本電気株式会社 | 半導体装置の実装構造およびその製造方法 |
KR19990067623A (ko) | 1995-11-28 | 1999-08-25 | 가나이 쓰도무 | 반도체장치와 그 제조방법 및 실장기판 |
US6166435A (en) * | 1998-12-10 | 2000-12-26 | Industrial Technology Research Institute | Flip-chip ball grid array package with a heat slug |
US6451448B1 (en) * | 1999-12-22 | 2002-09-17 | Mitsubishi Shindoh Co. Ltd. | Surface treated metallic materials and manufacturing method thereof |
JP2001284501A (ja) * | 2000-03-29 | 2001-10-12 | Sumitomo Electric Ind Ltd | 放熱基板 |
JP2002270638A (ja) * | 2001-03-06 | 2002-09-20 | Nec Corp | 半導体装置および樹脂封止方法および樹脂封止装置 |
TWI244181B (en) | 2001-10-17 | 2005-11-21 | Advanced Semiconductor Eng | Semiconductor chip packaging structure and manufacturing method of the same |
US6841413B2 (en) * | 2002-01-07 | 2005-01-11 | Intel Corporation | Thinned die integrated circuit package |
JP3934565B2 (ja) | 2003-02-21 | 2007-06-20 | 富士通株式会社 | 半導体装置 |
US6833289B2 (en) | 2003-05-12 | 2004-12-21 | Intel Corporation | Fluxless die-to-heat spreader bonding using thermal interface material |
JP2005108870A (ja) | 2003-09-26 | 2005-04-21 | Sekisui Chem Co Ltd | Icチップ、icチップの製造方法、半導体パッケージ及び液晶表示装置 |
US20050133934A1 (en) | 2003-12-23 | 2005-06-23 | Mellody James P. | Thermal interface material bonding |
JP2005217295A (ja) | 2004-01-30 | 2005-08-11 | Renesas Technology Corp | 半導体装置の製造方法 |
DE602004010061T2 (de) * | 2004-03-09 | 2008-09-11 | Infineon Technologies Ag | Hochzuverlässige, kostengünstige und thermisch verbesserte Halbleiterchip-Befestigungstechnologie mit AuSn |
US7023089B1 (en) * | 2004-03-31 | 2006-04-04 | Intel Corporation | Low temperature packaging apparatus and method |
-
2005
- 2005-09-27 US US11/235,920 patent/US7327029B2/en active Active
-
2006
- 2006-09-05 GB GB1020754A patent/GB2474967B/en not_active Expired - Fee Related
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- 2006-09-25 TW TW098108322A patent/TWI336512B/zh active
- 2006-09-25 CN CN2006101395386A patent/CN1959966B/zh active Active
- 2006-09-25 TW TW095135361A patent/TWI310597B/zh active
- 2006-09-27 KR KR1020060094257A patent/KR101245114B1/ko active IP Right Grant
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-
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- 2007-10-08 US US11/868,624 patent/US7429502B2/en active Active
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TWI732278B (zh) * | 2018-08-31 | 2021-07-01 | 台灣積體電路製造股份有限公司 | 半導體裝置及其製造方法 |
US11101236B2 (en) | 2018-08-31 | 2021-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and method of forming the same |
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US12051668B2 (en) | 2018-08-31 | 2024-07-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and method of forming the same |
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US20070069368A1 (en) | 2007-03-29 |
CN1959966B (zh) | 2010-05-12 |
US7429502B2 (en) | 2008-09-30 |
TWI310597B (en) | 2009-06-01 |
US20080026508A1 (en) | 2008-01-31 |
TWI336512B (en) | 2011-01-21 |
GB2442992B (en) | 2011-06-22 |
GB0617493D0 (en) | 2006-10-18 |
JP5250193B2 (ja) | 2013-07-31 |
KR101245114B1 (ko) | 2013-03-25 |
GB201020754D0 (en) | 2011-01-19 |
GB2442992A (en) | 2008-04-23 |
KR20070035457A (ko) | 2007-03-30 |
US7327029B2 (en) | 2008-02-05 |
GB2474967A (en) | 2011-05-04 |
JP2007096316A (ja) | 2007-04-12 |
GB2474967B (en) | 2011-07-27 |
TW200721410A (en) | 2007-06-01 |
TW200933838A (en) | 2009-08-01 |
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