CN102683322B - Pop封装结构及其制造方法 - Google Patents
Pop封装结构及其制造方法 Download PDFInfo
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Abstract
本发明涉及一种POP封装结构,包括上层封装结构及下层封装结构,其中所述上层封装结构的焊球通过焊接连接于所述下层封装结构的上表面,而且还包括设置于所述上层封装结构与所述下层封装结构之间的连接层,且该连接层包括:与所述上层封装结构的下表面形成连接的焊料层;设置于所述焊料层下侧的金属层;设置于所述金属层下侧的粘接层,该粘接层与下层封装结构形成连接。根据本发明,能够改善上下两个封装结构之间的应力分布,由此提高结合可靠性。
Description
技术领域
本发明涉及半导体封装领域,尤其涉及POP封装结构及其制造方法。
背景技术
在逻辑电路及存储器领域,POP封装(叠层封装,package-on-package)已经称为业界的首选,主要应用于制造高端便携式设备和智能手机使用的先进移动通信平台。由于POP封装可以支持便携式设备对复杂性和功能性的需求,因此称为该领域的发动机。一些应用处理器或基带/应用存储器组合这样的核心部件,目前倾向于POP封装解决方案。
图1为现有的POP封装结构的示意图。由图1可知,现有的POP封装的结构中,上层封装结构10通过其焊球11设置于下层封装结构20的上表面。其中所述焊球11与所述下层封装结构20上表面的焊盘21形成电气连接,由此执行复杂的功能。
但是,如上所述的现有POP封装结构中,由于上层封装结构10与下层封装结构20的连接仅通过球状的焊球11形成,因此应力集中作用于焊球11与下层封装结构的接合部位的边角部分,导致焊球11翘起,从而上层封装结构10与下层封装结构20的电气连接断开,半导体元件无法正常运行。
发明内容
本发明是为了解决上述问题而提出的,其目的在于提供一种POP封装结构及其制造方法,所述POP封装结构能够有效地分散上层封装结构与下层封装结构的结合应力,从而使采用这种封装方式的半导体元件的运行更加稳定。
根据本发明的一方面,提供一种POP封装结构,包括上层封装结构及下层封装结构,其中所述上层封装结构的焊球通过焊接连接于所述下层封装结构的上表面,而且,还包括设置于所述上层封装结构与所述下层封装结构之间的连接层,且该连接层包括:与所述上层封装结构的下表面形成连接的焊料层;设置于所述焊料层下侧的金属层;设置于所述金属层下侧的粘接层,该粘接层与下层封装结构形成连接。
其中,所述上层封装结构的下表面设有铜覆盖区,以与所述焊料层形成连接。
其中,所述上层封装结构的上表面设有粘接区,以与所述粘接层形成连接。
优选地,所述金属层为铜层,以提高连接层的稳定性的同时提高所述POP封装结构的散热性能。
优选地,所述粘接层由导热胶形成,以提高所述POP封装结构的散热性能。
根据本发明的另一方面,提供一种POP封装结构的制造方法,包括以下步骤:制作上层封装结构及下层封装结构;将连接层设置于所述下层封装结构的上表面;通过所述连接层以及上层封装结构的焊球,将上层封装结构设置于所述下层封装结构的上面,其中,所述连接层包括:与所述上层封装结构的下表面形成连接的焊料层;设置于所述焊料层下侧的金属层;设置于所述金属层下侧的粘接层,该粘接层与下层封装结构形成连接。
其中,在所述制作上层封装结构及下层封装结构的步骤中,还包括在所述下层封装结构的上表面设置粘接区的步骤。
其中,在所述制作上层封装结构及下层封装结构的步骤中,还包括在所述上层封装结构的底面设置铜覆盖区的步骤。
优选地,所述金属层为铜层,以提高连接层的稳定性的同时提高所述POP封装结构的散热性能。
优选地,所述粘接层由导热胶形成,以提高所述POP封装结构的散热性能。
根据本发明提供的POP封装结构及其制造方法,能够有效地分散上层封装结构与下层封装结构之间的结合应力。并且,通过设置于上层封装结构与下层封装结构之间的连接层,能够进一步提高POP封装结构的散热性能。
附图说明
通过下面结合示例性地示出一例的附图进行的描述,本发明的上述和其他目的和特点将会变得更加清楚,其中:
图1现有的POP封装结构的示意图;
图2为根据本发明的POP封装结构的示意图;
图3为图2中的连接层的示意图。
具体实施方式
以下,参照附图来详细说明根据本发明的实施例的POP封装结构。在以下说明中,为了能够更加准确地说明本发明的技术方案,对于本领域的与本发明没有直接关系的技术内容省略说明。部分组成部件在附图中被适当地扩张、省略及简化,并且各个组成部件的大小并不等同于实际大小。
如图2至图3所示,根据本发明实施例的POP封装结构包括:上层封装结构100、下层封装结构200以及连接层300。在本实施例中,所述上层封装结构100及下层封装结构200均为球栅阵列封装结构(BGA)。由此,所述上层封装结构100通过焊球101以及连接层300与所述下层封装结构200形成连接。其中,所述焊球101与所述下层封装结构200形成电气连接。具体说,所述下层封装结构200的包封材料202内设置有与所述焊球101形成电气连接的导电柱201,该导电柱201的设置位置及数量与所述上层封装结构100的焊球101相互对应,且所述导电柱201穿过所述包封材料202与PCB基板203上的焊盘(未图示)形成电气连接,从而使POP封装结构执行复杂的功能。显然,当下层封装结构200仅在中央部位设置包封材料,致使上层封装结构100的焊球101直接面对下层封装结构200的PCB基板时,焊球101直接焊接于该PCB基板的焊盘上。在本发明中,除了使用焊球101连接上层封装结构100与下层封装结构200之外,额外地在两个封装结构100、200之间增设连接层300,以将应力分散到中央部位,避免应力集中到焊球与下层封装结构的接合部位的边角部分,从而防止了焊球的翘起。其中,所述连接层300从上到下依次由焊料层301、金属层302、粘接层303构成。所述焊料层301与所述上层封装结构100的底面形成连接,为此,所述上层封装结构100的下表面还可以设置铜覆盖区,以提高焊接可靠性。优选地,所述铜覆盖区的面积大于焊料层301的面积。所述金属层302设置于所述焊料层301的下侧,在增加连接层300的稳定性的同时还具有散热功能。优选地,所述金属层为铜层,但并不局限于此,还可以采用具有良好的散热功能及焊接效果的其他金属。所述粘接层303设置于所述金属层302的下面,且与所述下层封装结构200的上表面形成连接。优选地,所述粘接层303由导热胶构成,以提高POP封装结构的散热性能。而且,所述下层封装结构200的上表面设置有粘接区,用以设置所述粘接层303,且所述粘接区的面积大于所述粘接层303的面积。此时,所述粘接区可以包括普通的双面胶,也可以是单独划分后进行粗糙化的区域。而且,在本发明中,所述连接层并不局限于上述结构,即在金属层的两侧可以设置液体胶,来替代粘接层及焊料层。
以下,对如上说明的根据本发明的POP封装结构的制造方法进行说明。
首先,制作上层封装结构及下层封装结构。在本实施例中,所述上层封装结构及下层封装结构为球栅阵列封装结构,但是所述上层封装结构不限于此。当所述上层封装结构采用其他形式的封装结构时,可以另设柱状导电体来替代焊球。所述上层封装结构及下层封装结构的制造方法属于现有技术的范畴,因此在此不再详述。
在制作完成上层封装结构及下层封装结构之后,进行各项测试,测试的内容包括电特性测试与外观检查。由此,将得到的其中一个良品作为POP封装结构中的下层封装结构。此时,所述下层封装结构的包封材料中可能包含用于将PCB基板的电路延伸到下层封装结构的上表面的导电柱,所述导电柱可以在下层封装结构的制造过程中形成,也可以在制造出下层封装结构之后通过穿孔并填充导电材料的方式形成。
然后,将连接层的粘接层设置于所述焊接区的上面。此时,可以选择性地在所述下层封装结构的上表面形成粘接区,以在该粘接区的上面设置连接层。所述粘接区可以包括普通的双面胶构成,也可以是对所述下层封装结构的上表面进行单独划分后进行粗糙化而增加粘接性能的区域。在本实施例中,所述连接层从上到下依次由焊料层、金属层以及粘接层构成。其中,所述金属层优选为铜层,所述粘接层由导热胶构成。此时,所述连接层的形成过程如下。首先,在下层封装结构的上表面设置粘接层。然后,在所述粘接层的上面粘贴金属层。最后,在所述金属层的上表面设置焊料层。而且,在本发明中,所述连接层并不局限于上述结构,即在金属层的两侧可以设置液体胶,来替代粘接层及焊料层。
然后,将上层封装结构设置在所述下层封装结构的上面。此时,可以选择性地在上层封装结构的下表面设置铜覆盖区,以增加焊接可靠性。并且,可以在所述铜覆盖区的上面涂覆助焊剂。所述铜覆盖区可以通过金属镀层的方式形成于所述上层封装结构的底面。如此,使分布在上层封装结构底面周围的焊球与下层封装结构的导电柱或PCB基板的焊盘对齐,并使所述铜覆盖区与所述连接层的焊料层对准,然后在专用设备中,使上层封装结构的焊球与下层封装结构的导电柱形成电气连接。
然后,对经过上述步骤而形成的POP封装结构进行各项测试,其中测试内容包括电特性测试和外观检查。
由此,完成POP封装结构的制造过程,并对最终成品进行包装。
采用上述制造工艺制造出的POP封装结构,由于在上下两个封装结构的中间设置了能够分散应力的连接层,因此能够提高连接可靠性。
本发明不限于上述实施例,在不脱离本发明范围的情况下,可以进行各种变形和修改。
Claims (10)
1.一种叠层封装结构,包括上层封装结构及下层封装结构,其中所述上层封装结构的焊球通过焊接连接于所述下层封装结构的上表面,其特征在于还包括设置于所述上层封装结构与所述下层封装结构之间的连接层,且该连接层包括:
与所述上层封装结构的下表面形成连接的焊料层;
设置于所述焊料层下侧的金属层;
设置于所述金属层下侧的粘接层,该粘接层与下层封装结构形成连接。
2.根据权利要求1所述的叠层封装结构,其特征在于所述上层封装结构的下表面设有铜覆盖区,以与所述焊料层形成连接。
3.根据权利要求1所述的叠层封装结构,其特征在于所述上层封装结构的上表面设有粘接区,以与所述粘接层形成连接。
4.根据权利要求1所述的叠层封装结构,其特征在于所述金属层为铜层。
5.根据权利要求1所述的叠层封装结构,其特征在于所述粘接层由导热胶形成。
6.一种叠层封装结构的制造方法,其特征在于包括以下步骤:
制作上层封装结构及下层封装结构;
将连接层设置于所述下层封装结构的上表面;
通过所述连接层以及上层封装结构的焊球,将上层封装结构设置于所述下层封装结构的上面,
其中,所述连接层包括:
与所述上层封装结构的下表面形成连接的焊料层;
设置于所述焊料层下侧的金属层;
设置于所述金属层下侧的粘接层,该粘接层与下层封装结构形成连接。
7.根据权利要求6所述的叠层封装结构的制造方法,其特征在于在所述制作上层封装结构及下层封装结构的步骤中,还包括在所述下层封装结构的上表面设置粘接区的步骤。
8.根据权利要求6所述的叠层封装结构的制造方法,其特征在于在所述制作上层封装结构及下层封装结构的步骤中,还包括在所述上层封装结构的底面设置铜覆盖区的步骤。
9.根据权利要求6所述的叠层封装结构的制造方法,其特征在于所述金属层为铜层。
10.根据权利要求6所述的叠层封装结构的制造方法,其特征在于所述粘接层由导热胶形成。
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