CN1819203A - 半导体集成电路器件及其制造方法 - Google Patents
半导体集成电路器件及其制造方法 Download PDFInfo
- Publication number
- CN1819203A CN1819203A CNA2006100673401A CN200610067340A CN1819203A CN 1819203 A CN1819203 A CN 1819203A CN A2006100673401 A CNA2006100673401 A CN A2006100673401A CN 200610067340 A CN200610067340 A CN 200610067340A CN 1819203 A CN1819203 A CN 1819203A
- Authority
- CN
- China
- Prior art keywords
- nmos pass
- pass transistor
- semiconductor
- film layer
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 219
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 73
- 229920005591 polysilicon Polymers 0.000 claims description 73
- 239000012535 impurity Substances 0.000 claims description 41
- 229910021332 silicide Inorganic materials 0.000 claims description 24
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 18
- 239000003870 refractory metal Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 6
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 5
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 5
- 229910021357 chromium silicide Inorganic materials 0.000 claims description 4
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- 229910000859 α-Fe Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 101
- 238000009792 diffusion process Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 239000012528 membrane Substances 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- -1 phosphonium ion Chemical class 0.000 description 2
- 229910021339 platinum silicide Inorganic materials 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 102000004310 Ion Channels Human genes 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005029319 | 2005-02-04 | ||
JP2005029319 | 2005-02-04 | ||
JP2005-029319 | 2005-02-04 | ||
JP2006020297A JP4987309B2 (ja) | 2005-02-04 | 2006-01-30 | 半導体集積回路装置とその製造方法 |
JP2006-020297 | 2006-01-30 | ||
JP2006020297 | 2006-01-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1819203A true CN1819203A (zh) | 2006-08-16 |
CN1819203B CN1819203B (zh) | 2010-08-04 |
Family
ID=36779685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100673401A Expired - Fee Related CN1819203B (zh) | 2005-02-04 | 2006-02-04 | 半导体集成电路器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060176628A1 (zh) |
JP (1) | JP4987309B2 (zh) |
KR (1) | KR101195720B1 (zh) |
CN (1) | CN1819203B (zh) |
TW (1) | TW200727450A (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101458337B (zh) * | 2007-12-12 | 2010-12-08 | 中国科学院微电子研究所 | 基于绝缘体上硅的双探头pmos辐射剂量计 |
CN101937091B (zh) * | 2007-12-12 | 2012-07-25 | 中国科学院微电子研究所 | 一种可调整量程的堆叠测量电路 |
CN102804388A (zh) * | 2009-06-18 | 2012-11-28 | 夏普株式会社 | 半导体装置 |
CN105990374A (zh) * | 2015-03-18 | 2016-10-05 | 意法半导体(克洛尔2)公司 | 集成电路和用于制造在集成电路内的至少一个晶体管的方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007165492A (ja) * | 2005-12-13 | 2007-06-28 | Seiko Instruments Inc | 半導体集積回路装置 |
JP4533873B2 (ja) | 2006-08-23 | 2010-09-01 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP4344390B2 (ja) * | 2007-03-27 | 2009-10-14 | Okiセミコンダクタ株式会社 | 半導体装置 |
JP4573849B2 (ja) * | 2007-03-28 | 2010-11-04 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
FR2985372A1 (fr) * | 2012-01-04 | 2013-07-05 | St Microelectronics Sa | Circuit electronique incluant un transistor mos et des agencements pour resister aux decharges electrostatiques |
US10651170B2 (en) * | 2017-07-11 | 2020-05-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Isolated wells for resistor devices |
KR102495516B1 (ko) * | 2018-05-08 | 2023-02-02 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
CN115566015A (zh) * | 2021-08-20 | 2023-01-03 | 台湾积体电路制造股份有限公司 | 半导体器件及其制造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4759836A (en) * | 1987-08-12 | 1988-07-26 | Siliconix Incorporated | Ion implantation of thin film CrSi2 and SiC resistors |
US5489792A (en) * | 1994-04-07 | 1996-02-06 | Regents Of The University Of California | Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility |
JPH0837284A (ja) * | 1994-07-21 | 1996-02-06 | Nippondenso Co Ltd | 半導体集積回路装置 |
JPH0982814A (ja) * | 1995-07-10 | 1997-03-28 | Denso Corp | 半導体集積回路装置及びその製造方法 |
JPH11345886A (ja) * | 1998-06-02 | 1999-12-14 | Seiko Instruments Inc | 半導体装置の静電破壊防止回路 |
US6608744B1 (en) * | 1999-11-02 | 2003-08-19 | Oki Electric Industry Co., Ltd. | SOI CMOS input protection circuit with open-drain configuration |
JP4124553B2 (ja) * | 2000-08-04 | 2008-07-23 | セイコーインスツル株式会社 | 半導体装置 |
JP2002124641A (ja) * | 2000-10-13 | 2002-04-26 | Seiko Instruments Inc | 半導体装置 |
JP2002313924A (ja) * | 2001-04-09 | 2002-10-25 | Seiko Instruments Inc | 半導体装置 |
JP2003158198A (ja) * | 2001-09-07 | 2003-05-30 | Seiko Instruments Inc | 相補型mos半導体装置 |
JP2004055676A (ja) * | 2002-07-17 | 2004-02-19 | Seiko Instruments Inc | 半導体装置 |
JP4294935B2 (ja) * | 2002-10-17 | 2009-07-15 | 株式会社ルネサステクノロジ | 半導体装置 |
JP3848263B2 (ja) * | 2003-01-15 | 2006-11-22 | 沖電気工業株式会社 | 半導体装置 |
JP2006032543A (ja) * | 2004-07-14 | 2006-02-02 | Seiko Instruments Inc | 半導体集積回路装置 |
-
2006
- 2006-01-30 JP JP2006020297A patent/JP4987309B2/ja not_active Expired - Fee Related
- 2006-02-03 US US11/346,827 patent/US20060176628A1/en not_active Abandoned
- 2006-02-03 KR KR1020060010750A patent/KR101195720B1/ko active IP Right Grant
- 2006-02-03 TW TW095103801A patent/TW200727450A/zh unknown
- 2006-02-04 CN CN2006100673401A patent/CN1819203B/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101458337B (zh) * | 2007-12-12 | 2010-12-08 | 中国科学院微电子研究所 | 基于绝缘体上硅的双探头pmos辐射剂量计 |
CN101937091B (zh) * | 2007-12-12 | 2012-07-25 | 中国科学院微电子研究所 | 一种可调整量程的堆叠测量电路 |
CN102804388A (zh) * | 2009-06-18 | 2012-11-28 | 夏普株式会社 | 半导体装置 |
CN105990374A (zh) * | 2015-03-18 | 2016-10-05 | 意法半导体(克洛尔2)公司 | 集成电路和用于制造在集成电路内的至少一个晶体管的方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20060089673A (ko) | 2006-08-09 |
TW200727450A (en) | 2007-07-16 |
CN1819203B (zh) | 2010-08-04 |
KR101195720B1 (ko) | 2012-10-29 |
JP4987309B2 (ja) | 2012-07-25 |
JP2006245552A (ja) | 2006-09-14 |
US20060176628A1 (en) | 2006-08-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160317 Address after: Chiba County, Japan Patentee after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba County, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100804 Termination date: 20220204 |
|
CF01 | Termination of patent right due to non-payment of annual fee |