CN1815366A - 光刻胶组合物及用它形成薄膜图案的方法以及用它制备薄膜晶体管阵列板的方法 - Google Patents
光刻胶组合物及用它形成薄膜图案的方法以及用它制备薄膜晶体管阵列板的方法 Download PDFInfo
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Images
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
- F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
- F26B3/283—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun in combination with convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B23/00—Heating arrangements
- F26B23/02—Heating arrangements using combustion heating
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
- F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
- F26B3/30—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microbiology (AREA)
- Combustion & Propulsion (AREA)
- Sustainable Development (AREA)
- Thin Film Transistor (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Phenolic Resins Or Amino Resins (AREA)
Abstract
Description
序号 | 酚醛清漆树脂(Mw=8000) | 在感光剂中(9)和(10)的比率 | 抗蚀刻添加剂(1-十二烷基硫醇) | 裂缝 | 金属图案 |
1 | 30 | 10∶0 | 0.5-1 | ○ | - |
2 | 30 | 10∶0 | 3 | △ | - |
3 | 30 | 10∶0 | 5 | × | ● |
4 | 30 | 10∶0 | 7 | × | ● |
5 | 30 | 10∶0 | 9 | × | ● |
CE 1 | 30 | 10∶0 | 15 | × | ▲ |
CE 2 | 30 | 10∶0 | 17 | × | × |
6 | 30 | 5∶5 | 0.5-1 | △ | - |
7 | 30 | 5∶5 | 3 | × | ● |
8 | 30 | 5∶5 | 5 | × | ● |
9 | 30 | 5∶5 | 7 | × | ● |
10 | 30 | 5∶5 | 9 | × | ● |
CE 3 | 30 | 5∶5 | 15 | × | ▲ |
CE 4 | 30 | 5∶5 | 17 | × | × |
CE 5 | 30 | 10∶0 | 0 | ◎ | - |
CE 6 | 30 | 10∶0 | 0.1 | ◎ | - |
CE 7 | 30 | 10∶0 | 0.3 | ◎ | - |
CE 8 | 30 | 5∶5 | 0.3 | ◎ | - |
CE 9 | 30 | 5∶5 | 0.4 | ◎ | - |
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10038/05 | 2005-02-03 | ||
KR1020050010038A KR101142999B1 (ko) | 2005-02-03 | 2005-02-03 | 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한패턴의 형성 방법 및 상기 포토레지스트 조성물을 이용한박막 트랜지스터 표시판의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
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CN1815366A true CN1815366A (zh) | 2006-08-09 |
CN1815366B CN1815366B (zh) | 2011-08-03 |
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CN2006100071407A Expired - Fee Related CN1815366B (zh) | 2005-02-03 | 2006-02-05 | 光刻胶组合物及用它形成薄膜图案的方法以及用它制备薄膜晶体管阵列板的方法 |
Country Status (5)
Country | Link |
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US (1) | US7537974B2 (zh) |
JP (1) | JP4730093B2 (zh) |
KR (1) | KR101142999B1 (zh) |
CN (1) | CN1815366B (zh) |
TW (1) | TWI416249B (zh) |
Cited By (4)
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CN101324755B (zh) * | 2007-06-14 | 2012-10-03 | Jsr株式会社 | 感放射线性树脂组合物、层间绝缘膜和微透镜及其形成方法 |
CN103187402A (zh) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | 测试结构及其形成方法、冲洗工艺的冲洗时间判定方法 |
CN101196684B (zh) * | 2006-12-04 | 2014-10-01 | 乐金显示有限公司 | 抗蚀溶液以及使用其制作薄膜图案和液晶显示器件的方法 |
CN106810655A (zh) * | 2016-12-23 | 2017-06-09 | 沈阳化工大学 | 一种带有3‑氨基丙基五甲基二硅氧烷的酚醛泡沫及其制备方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6443435A (en) * | 1987-08-11 | 1989-02-15 | Minolta Camera Kk | Paper skew detecting device |
KR20060097381A (ko) * | 2005-03-09 | 2006-09-14 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR101152139B1 (ko) * | 2005-12-06 | 2012-06-15 | 삼성전자주식회사 | 표시 장치용 세정제 및 이를 사용하는 박막 트랜지스터표시판의 제조 방법 |
KR101225126B1 (ko) | 2009-03-19 | 2013-01-22 | 주식회사 엘지화학 | 머켑토 화합물을 포함하는 감광성 실리콘 수지 조성물 및 이를 이용한 반도체 소자 및 디스플레이 소자 |
KR101751466B1 (ko) * | 2010-09-01 | 2017-06-28 | 삼성디스플레이 주식회사 | 포토레지스트 조성물 및 이를 이용한 패턴의 형성 방법 |
TWI487038B (zh) * | 2011-10-27 | 2015-06-01 | E Ink Holdings Inc | 薄膜電晶體基板及其製造方法 |
JP6302643B2 (ja) * | 2013-11-08 | 2018-03-28 | 東京応化工業株式会社 | ポジ型レジスト組成物、及びレジストパターン形成方法、並びに、メタル層からなるパターンの形成方法、及び貫通電極の製造方法 |
KR102164614B1 (ko) * | 2017-11-24 | 2020-10-12 | 주식회사 엘지화학 | 포토레지스트 조성물 및 이를 이용한 포토레지스트 필름 |
Family Cites Families (13)
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JPS5747875A (en) | 1980-09-02 | 1982-03-18 | Matsushita Electric Ind Co Ltd | Resist composition |
JPH028270A (ja) | 1988-06-28 | 1990-01-11 | Toshiba Corp | ソルダーレジストインキ組成物 |
JPH0876373A (ja) * | 1994-09-07 | 1996-03-22 | Fuji Hanto Electron Technol Kk | ポジ型感光性組成物とそれを用いた微細パターン形成方法 |
KR0140908B1 (ko) | 1995-01-20 | 1998-06-15 | 박흥기 | 액정 디스플레이 칼라필터용 안료분산 포토 레지스트 조성물 |
KR0153335B1 (ko) | 1995-08-31 | 1998-11-02 | 한형수 | 액정 디스플레이 칼라필터용 안료분산 포토 레지스트 조성물 |
US6379869B1 (en) | 1999-03-31 | 2002-04-30 | Infineon Technologies Ag | Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning |
TW594395B (en) * | 2000-09-29 | 2004-06-21 | Nippon Zeon Co | Photoresist composition for insulating film, insulating film for organic electroluminescent element, and process for producing the same |
JP3710717B2 (ja) | 2001-03-06 | 2005-10-26 | 東京応化工業株式会社 | 厚膜用ポジ型ホトレジスト組成物、ホトレジスト膜およびこれを用いたバンプ形成方法 |
JP4673513B2 (ja) * | 2001-08-01 | 2011-04-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2003119344A (ja) * | 2001-10-12 | 2003-04-23 | Shin Etsu Chem Co Ltd | ハイブリッド化合物、レジスト材料及びパターン形成方法 |
JP2004103926A (ja) | 2002-09-11 | 2004-04-02 | Renesas Technology Corp | レジストパターン形成方法とそれを用いた半導体装置の製造方法およびレジスト表層処理剤 |
JP4207581B2 (ja) | 2002-11-06 | 2009-01-14 | 日立化成デュポンマイクロシステムズ株式会社 | 耐熱感光性樹脂組成物、レリーフパターンの製造方法及び電子部品 |
KR101209049B1 (ko) * | 2004-12-24 | 2012-12-07 | 스미또모 가가꾸 가부시끼가이샤 | 감광성 수지 및 상기 감광성 수지로 이루어진 패턴을 포함하는 박막 표시판 및 그 제조 방법 |
-
2005
- 2005-02-03 KR KR1020050010038A patent/KR101142999B1/ko active IP Right Grant
- 2005-10-13 TW TW094135665A patent/TWI416249B/zh not_active IP Right Cessation
- 2005-12-28 JP JP2005380489A patent/JP4730093B2/ja active Active
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2006
- 2006-02-02 US US11/346,047 patent/US7537974B2/en active Active
- 2006-02-05 CN CN2006100071407A patent/CN1815366B/zh not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101196684B (zh) * | 2006-12-04 | 2014-10-01 | 乐金显示有限公司 | 抗蚀溶液以及使用其制作薄膜图案和液晶显示器件的方法 |
CN101324755B (zh) * | 2007-06-14 | 2012-10-03 | Jsr株式会社 | 感放射线性树脂组合物、层间绝缘膜和微透镜及其形成方法 |
CN103187402A (zh) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | 测试结构及其形成方法、冲洗工艺的冲洗时间判定方法 |
CN103187402B (zh) * | 2011-12-31 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | 测试结构及其形成方法、冲洗工艺的冲洗时间判定方法 |
CN106810655A (zh) * | 2016-12-23 | 2017-06-09 | 沈阳化工大学 | 一种带有3‑氨基丙基五甲基二硅氧烷的酚醛泡沫及其制备方法 |
Also Published As
Publication number | Publication date |
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US20060188808A1 (en) | 2006-08-24 |
KR101142999B1 (ko) | 2012-05-08 |
JP2006215538A (ja) | 2006-08-17 |
TWI416249B (zh) | 2013-11-21 |
US7537974B2 (en) | 2009-05-26 |
CN1815366B (zh) | 2011-08-03 |
JP4730093B2 (ja) | 2011-07-20 |
KR20060089923A (ko) | 2006-08-10 |
TW200628975A (en) | 2006-08-16 |
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