CN1761049A - 薄膜晶体管阵列面板及其制造方法 - Google Patents
薄膜晶体管阵列面板及其制造方法 Download PDFInfo
- Publication number
- CN1761049A CN1761049A CNA2005100981501A CN200510098150A CN1761049A CN 1761049 A CN1761049 A CN 1761049A CN A2005100981501 A CNA2005100981501 A CN A2005100981501A CN 200510098150 A CN200510098150 A CN 200510098150A CN 1761049 A CN1761049 A CN 1761049A
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- semiconductor
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Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000010409 thin film Substances 0.000 title claims description 28
- 229910001182 Mo alloy Inorganic materials 0.000 claims abstract description 103
- 239000010955 niobium Substances 0.000 claims abstract description 96
- 239000010936 titanium Substances 0.000 claims abstract description 73
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 53
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 49
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 26
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 25
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000011733 molybdenum Substances 0.000 claims abstract description 25
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims description 116
- 239000003990 capacitor Substances 0.000 claims description 93
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 66
- 238000005530 etching Methods 0.000 claims description 61
- 239000004020 conductor Substances 0.000 claims description 49
- 239000000654 additive Substances 0.000 claims description 46
- 230000000996 additive effect Effects 0.000 claims description 46
- 239000012212 insulator Substances 0.000 claims description 44
- 238000002161 passivation Methods 0.000 claims description 43
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 38
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 36
- 229910052720 vanadium Inorganic materials 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 18
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 18
- 239000004973 liquid crystal related substance Substances 0.000 claims description 18
- 229910017604 nitric acid Inorganic materials 0.000 claims description 18
- 230000005540 biological transmission Effects 0.000 claims description 12
- 125000006850 spacer group Chemical group 0.000 claims description 11
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 241000700159 Rattus Species 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 183
- 238000003860 storage Methods 0.000 description 40
- 239000010408 film Substances 0.000 description 35
- 239000000126 substance Substances 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 18
- 239000003795 chemical substances by application Substances 0.000 description 17
- 229910000838 Al alloy Inorganic materials 0.000 description 16
- 239000008367 deionised water Substances 0.000 description 16
- 229910021641 deionized water Inorganic materials 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 238000004626 scanning electron microscopy Methods 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 239000000428 dust Substances 0.000 description 8
- 239000011368 organic material Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000005984 hydrogenation reaction Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000012774 insulation material Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 239000006104 solid solution Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 235000008429 bread Nutrition 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 240000001439 Opuntia Species 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000001055 blue pigment Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000001056 green pigment Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/924—To facilitate selective etching
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (33)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR71612/04 | 2004-09-08 | ||
KR1020040071612A KR101061850B1 (ko) | 2004-09-08 | 2004-09-08 | 박막 트랜지스터 표시판 및 그 제조방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101377593A Division CN101552242B (zh) | 2004-09-08 | 2005-09-08 | 薄膜晶体管阵列面板及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1761049A true CN1761049A (zh) | 2006-04-19 |
CN1761049B CN1761049B (zh) | 2010-09-01 |
Family
ID=36159673
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005100981501A Active CN1761049B (zh) | 2004-09-08 | 2005-09-08 | 薄膜晶体管阵列面板及其制造方法 |
CN2009101377593A Active CN101552242B (zh) | 2004-09-08 | 2005-09-08 | 薄膜晶体管阵列面板及其制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101377593A Active CN101552242B (zh) | 2004-09-08 | 2005-09-08 | 薄膜晶体管阵列面板及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7301170B2 (zh) |
JP (1) | JP5240964B2 (zh) |
KR (1) | KR101061850B1 (zh) |
CN (2) | CN1761049B (zh) |
TW (1) | TWI404212B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102130177A (zh) * | 2010-01-15 | 2011-07-20 | 三星电子株式会社 | 晶体管、制造该晶体管的方法及包括该晶体管的电子装置 |
CN105590953A (zh) * | 2014-11-12 | 2016-05-18 | 乐金显示有限公司 | 具有高孔径比的有机发光二极管显示器及其制造方法 |
CN112368839A (zh) * | 2018-06-27 | 2021-02-12 | 三星显示有限公司 | 显示面板及制造该显示面板的方法 |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100935670B1 (ko) * | 2003-04-04 | 2010-01-07 | 삼성전자주식회사 | 액정표시장치, 박막 트랜지스터 표시판 및 그의 제조 방법 |
KR20060042425A (ko) * | 2004-11-09 | 2006-05-15 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
TWI326379B (en) * | 2005-09-20 | 2010-06-21 | Au Optronics Corp | A double-sided liquid crystal display |
US7837929B2 (en) * | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
KR20070075808A (ko) * | 2006-01-16 | 2007-07-24 | 삼성전자주식회사 | 표시 기판의 제조 방법 및 이를 이용하여 제조한 표시 기판 |
TWI282467B (en) * | 2006-04-07 | 2007-06-11 | Innolux Display Corp | Liquid crystal panel |
KR101240652B1 (ko) * | 2006-04-24 | 2013-03-08 | 삼성디스플레이 주식회사 | 표시 장치용 박막 트랜지스터 표시판 및 그 제조 방법 |
WO2008001517A1 (en) * | 2006-06-30 | 2008-01-03 | Sharp Kabushiki Kaisha | Tft substrate, display panel and display device provided with such tft substrate, and tft substrate manufacturing method |
US20080032431A1 (en) * | 2006-08-03 | 2008-02-07 | Tpo Displays Corp. | Method for fabricating a system for displaying images |
JP2008098611A (ja) * | 2006-09-15 | 2008-04-24 | Kobe Steel Ltd | 表示装置 |
TWI319610B (en) * | 2006-12-29 | 2010-01-11 | Winbond Electronics Corp | Method of manufacturing openings and via openings |
KR101373735B1 (ko) | 2007-02-22 | 2014-03-14 | 삼성디스플레이 주식회사 | 신호선의 제조 방법, 박막 트랜지스터 표시판 및 그의 제조방법 |
KR101319334B1 (ko) * | 2007-03-20 | 2013-10-16 | 엘지디스플레이 주식회사 | 액정표시패널 및 그의 제조방법 |
US8786793B2 (en) * | 2007-07-27 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
JP4506810B2 (ja) | 2007-10-19 | 2010-07-21 | ソニー株式会社 | 表示装置 |
KR101490480B1 (ko) * | 2008-07-07 | 2015-02-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
TWI606595B (zh) * | 2008-11-07 | 2017-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
KR101570347B1 (ko) * | 2008-11-25 | 2015-11-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
WO2011027676A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2011027701A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
KR101702106B1 (ko) * | 2010-03-17 | 2017-02-03 | 삼성디스플레이 주식회사 | 전기 습윤 표시 장치 |
US8890187B2 (en) * | 2010-04-16 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device with an insulating partition |
US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
US8449818B2 (en) * | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
KR101764902B1 (ko) | 2010-12-06 | 2017-08-14 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
KR20140001246A (ko) | 2011-05-10 | 2014-01-06 | 에이치. 씨. 스타아크 아이앤씨 | 멀티-블록 스퍼터링 타겟 및 이에 관한 제조방법 및 물품 |
JP6033071B2 (ja) * | 2011-12-23 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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- 2005-07-13 TW TW094123767A patent/TWI404212B/zh active
- 2005-08-11 JP JP2005233289A patent/JP5240964B2/ja active Active
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CN102130177A (zh) * | 2010-01-15 | 2011-07-20 | 三星电子株式会社 | 晶体管、制造该晶体管的方法及包括该晶体管的电子装置 |
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CN105590953B (zh) * | 2014-11-12 | 2018-07-13 | 乐金显示有限公司 | 具有高孔径比的有机发光二极管显示器及其制造方法 |
CN112368839A (zh) * | 2018-06-27 | 2021-02-12 | 三星显示有限公司 | 显示面板及制造该显示面板的方法 |
CN112368839B (zh) * | 2018-06-27 | 2024-04-12 | 三星显示有限公司 | 显示面板及制造该显示面板的方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200614514A (en) | 2006-05-01 |
CN101552242A (zh) | 2009-10-07 |
US7662715B2 (en) | 2010-02-16 |
JP2006080505A (ja) | 2006-03-23 |
KR20060022839A (ko) | 2006-03-13 |
TWI404212B (zh) | 2013-08-01 |
CN1761049B (zh) | 2010-09-01 |
US20080166827A1 (en) | 2008-07-10 |
CN101552242B (zh) | 2012-02-01 |
US7301170B2 (en) | 2007-11-27 |
US7550768B2 (en) | 2009-06-23 |
US20060050192A1 (en) | 2006-03-09 |
US20080073674A1 (en) | 2008-03-27 |
JP5240964B2 (ja) | 2013-07-17 |
KR101061850B1 (ko) | 2011-09-02 |
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