CN1707726A - Field electron emission device and lighting device - Google Patents
Field electron emission device and lighting device Download PDFInfo
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- CN1707726A CN1707726A CN 200410098025 CN200410098025A CN1707726A CN 1707726 A CN1707726 A CN 1707726A CN 200410098025 CN200410098025 CN 200410098025 CN 200410098025 A CN200410098025 A CN 200410098025A CN 1707726 A CN1707726 A CN 1707726A
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Abstract
This field electron emission device comprises a linear conductor wire having concave/convex on its surface and an electron emitter having electron conductivity formed on the concave/convex surface of the conductor wire. Preferably, the concave/convex is formed by a channeling performed to the surface of the conductor wire. Preferably, the electron emitter is composed of microscopic linear materials composed of selected one or combination of carbon nano-tube, carbon nano-wall, carbon fiber, graphite fiber, amorphous carbon fiber and diamond fiber.
Description
Technical field
The present invention relates to field electron emission device and lighting device, in more detail, relate to field electron emission device, and possess the lighting device of this field electron emission device applicable to the electron beam emission source of the lighting source of high brightness lamp etc. or thin display etc.
Background technology
The scheme of the lighting device that has proposed, it constitutes: from being arranged at most electron emission part (emitter) anode emitting electrons of field electron emission device (negative electrode), this electrons emitted is constantly to quicken to collide the fluorophor that is coated on anode at a high speed, electron bombardment makes this light-emitting phosphor thus, the light that sends thus is used as illumination light uses.This lighting device, electronics emission form according to field electron emission device, can be applicable to that light-emitting area is the flat light source on plane, flat-panel screens etc. for example, but if to be applicable to that general light-emitting area is the linear light source type of wire, the lighting device of for example straight pipe type, then exists the technical problem that waits to solve.
Summary of the invention
The object of the present invention is to provide a kind of applicable to high brightness lamp etc. lighting source or the field electron emission device of the electron beam emission source of thin display etc., and possess the lighting device of this field electron emission device.
Field electron emission device of the present invention is characterized in that, possesses: the lead that has concavo-convex wire on the surface; And be formed on the convex-concave surface of this lead and have the electron emission part of electronic conductivity.
According to the present invention, be provided with concavo-convex at length direction along the surface of wire lead, thus, when forming electron emission part with electronic conductivity, compared with the surface is smooth lead, can promote the generation of electron emission part product nucleus more, make the electron emission part product nucleus that is produced carry out the zoarium growth and form electron emission part, make electron emission part form wire thus.And, at the outstanding formed electron emission part front end of protuberance,, meeting concentrates because of producing very strong electric field, thus can promote electronics to launch especially, compared with in the past can be with low voltage drive more.In this situation, because of the lead of shape along the line forms most protuberances, lead can make the electron emission amount equalization on the whole, electron emission density is improved, so more suitable to the lighting device that needs high brightness.
At this, so-called above-mentioned " wire " is not confined to linearity, comprises the curve-like of spiral helicine wire, wavy wire etc., and the wire shape that forms of mixed straight line shape and curve-like.
Should " lead ", be not limited to solidly, hollow, in addition, its cross sectional shape is not particularly limited, and is not limited to circle, also can be ellipse, rectangle, other shapes.
So-called above-mentioned " concavo-convex ", the surface that is guide line is not smooth, for example, is to have concavo-convex on the surface by projection, depression or groove etc.
Above-mentioned " lead ", can have on the whole on the surface concavo-convex, also can the part have concavo-convex.
Footpath outside this lead though can select aptly according to purposes etc., is considered from wire rod processing, be preferably about 0.5～2mm in, more preferably about 1mm in.In addition, the ratio of concavo-convex height and this wire diameter, based on the reason of membrance casting condition, being preferably is about M0.5～M1 (JIS fine thread) to the lead among the 1mm φ for example, more preferably to the lead among the 1mm φ, is M1 (JIS fine thread) degree.
Electron emission part with electronic conductivity, if by carbon-based material, carbon nano-tube for example, carbon nano-plates, cheek bore carbon, and graphite, fullerene (fullerenc) etc. constitute, preferably can be with the material of lower electric field transmitted electronics.
Moreover, in the present invention, be not limited to above-mentioned concavo-convex shape, can by grooves such as screw chasing process form above-mentioned concavo-convex.Processing mode is more sharp-pointed shape as concavo-convex screw thread slot part and tooth portion thus, so when forming electron emission part, more can promote the generation of examining.In addition, because can concentrate electric field, so more can promote the electronics emission at the formed electron emission part front end of sharp-pointed ridge portion.
Above-mentioned concavo-convex, also can form by the surface roughness of setting lead, surface roughness for example has: the roughness of the processing trace when lead is made machining with grind or turning etc., or conductive line surfaces formed surface roughness when stipulating surface roughness etc. with chemical treatment.
In addition, field electron emission device of the present invention also can comprise the catalyst metal lead of the catalyst that forms electron emission part in many mutually stranded leads, and on the lead of this catalyst metal, formation has the electron emission part of electronic conductivity.Be applicable to catalyst metal of the present invention, not special restriction, preferably any at least a kind among Ni, Fe, the Co.The lead of catalyst metal, preferred lead itself is made up of catalyst metal, is not catalyst metal and adopt other metals but also can be lead itself, and at conductive line surfaces formation catalyst metal.
According to the present invention, because of forming lead is stranded, so it is concavo-convex that the lead of catalyst metal becomes, because of on the lead of this catalyst metal, forming electron emission part,, produce stronger electric field and concentrate so before electron emission part, hold, can promote the electronics emission especially, therefore, according to the present invention, can be more suitable to the lighting device that needs high brightness.
Field electron emission device of the present invention in the mill, the preferred electron emission part is that the carbon by carbon nano-tube or carbon nano-plates etc. is that small thread constitutes, this small thread is preferably the DC plasma CVD method that for example can drop into high-octane plasma space and forms.
Field electron emission device of the present invention can be implemented groove processing at the wire lead in another is made, on the wire lead after applying this groove processing, formation has the electron emission part of electronic conductivity.Groove processing can also can form groove in part at the full week formation groove of lead, in addition, also can form thread groove.In addition, preferably implement the groove first being processed, can on the lead of wire, become the catalyst metal of electron emission part catalyst.In this situation, because of there is the catalyst metal layer in the surface at groove protuberance in addition, so can optionally form electron emission part by the protuberance beyond groove.
In lighting device of the present invention, the peripheral device of vacuum is preferably elongated, preferably metal bar is taken in configuration along its length, and field electron emission device is disposed with the metal bar subtend along its length.
Description of drawings
Fig. 1 is the stereogram of the lighting device of the field electron emission device (filamentary cathode) that possesses embodiment of the present invention.
Fig. 2 is the vertical profile end view of Fig. 1.
Fig. 3 is the cutaway view along the A-A line of Fig. 2.
Fig. 4 is the amplification stereogram of the filamentary cathode of Fig. 1.
Fig. 5 is the summary pie graph of DC plasma CVD apparatus.
Fig. 6 is the local amplification view of the filamentary cathode of Fig. 1.
Fig. 7 is the local amplification stereogram of filamentary cathode.
Fig. 8 A is the cutaway view that is used for illustrating the manufacturing process of filamentary cathode.
Fig. 8 B is the cutaway view that manufacturing process shown in Fig. 8 A is described usefulness.
Fig. 9 is the amplification stereogram of the variation of filamentary cathode.
Figure 10 is the local amplification stereogram of the filamentary cathode of other variation.
Figure 11 A is the cutaway view of manufacturing process that is used for illustrating the filamentary cathode of Figure 10.
Figure 11 B is the cutaway view of manufacturing process that is used for illustrating the filamentary cathode of Figure 10.
Figure 12 is the stereogram of other variation of expression filamentary cathode.
Figure 13 is the local amplification stereogram of Figure 12.
Figure 14 is the local amplification view of the filamentary cathode of Figure 12.
Figure 15 is the local amplification view of other filamentary cathodes.
Figure 16 A is the cutaway view of other distortion of expression filamentary cathode.
Figure 16 B is the cutaway view of other distortion of expression filamentary cathode,
Figure 17 A is the cutaway view of other distortion of expression filamentary cathode.
Figure 17 B is the cutaway view of other distortion of expression filamentary cathode.
Figure 18 A is the cutaway view of other distortion of expression filamentary cathode.
Figure 18 B is the cutaway view of other distortion of expression filamentary cathode.
Figure 19 A is the cutaway view of other distortion of expression filamentary cathode.
Figure 19 B is the cutaway view of other distortion of expression filamentary cathode.
Embodiment
Below, consult accompanying drawing and describe embodiments of the present invention in detail.
Fig. 1 is the stereogram of the lighting device of the field electron emission device (filamentary cathode) that possesses embodiment of the present invention; Fig. 2 is the cutaway view of the vertical profile side-looking of this lighting device of expression; Fig. 3 is the cutaway view that arrow A-A line direction is looked from Fig. 2.
Consult these figure, this lighting device 1 possesses the peripheral device 10 of vacuum, and its outward appearance be elongated tubular on a direction, formation straight tube shape, and inside is the vacuum or the airtight conditions of vacuum almost.The peripheral device 10 of vacuum is to be made of with rondelle lid 10b, the 10b of the both ends open of this straight tube-like glass tube 10 of sealing straight tube-like glass tube 10a, the material of the peripheral device 10 of vacuum is glass materials, if the material of the peripheral device 10 of vacuum can make the illuminating light transmission, half by or the material that can see through with the transmitance of regulation all can use.As the shape beyond this execution mode, for example, both sides or the side of rondelle lid 10b, 10b can be omitted, and constitute the glass tube at inaccessible two ends or inaccessible one distolateral glass tube 10.
In the inside of glass tube 10, along the band fluorophor anode 11 of its length direction outfit cross section circle, its two ends are fixed with rondelle lid 10b, 10b, and possess fluorophor 12 at its outer peripheral face.Filamentary cathode (field electron emission device) 13, be to be equipped with round the form of being with fluorophor anode 11, band fluorophor anode 11, it can be solid construction, also can be hollow structure, in addition, the material of band fluorophor anode 11, not special the qualification for example can be made up of aluminium, copper, Ni, SUS etc.In addition, mirror finish is for example implemented on the surface of band fluorophor anode 11, promoting adherence to fluorophor 12, and the reflection characteristic luminous to fluorophor 12.The formation of fluorophor 12 limits especially, for example, can be sprayed by fluorophor, or the sheet type phosphor stickup waits and is provided with.The material of fluorophor 12, as long as can be luminous by electron bombardment, not special the qualification.The outer peripheral face of fluorophor 12 forms light-emitting area.The material of fluorophor 12, adularescent fluorescent material, green phosphor material, blue emitting phophor material, red-emitting phosphors material, and other etc., can select combination aptly according to its look that throws light on.Fluorophor 12 can be monochrome and also can be polychrome.
The filamentary cathode 13 of field electron emission device is that the two constitutes by the lead 20 of linearity and electron emission part 29.Lead 20, its length direction are to carry over glass tube 10 inside, and alternately have recess 21 and protuberance 22 along its length on its surface.The external diameter of filamentary cathode 13 does not limit especially, for example the external diameter about 1mm.Electron emission part 29 has electronic conductivity.The recess 21 on lead 20 surfaces and the formation method of protuberance 22 are not particularly limited, and for example, lead 20 processed by screw chasing form.The electronics emission form of electron emission part 29 does not limit especially.Electron emission part 29 is that small thread is constituted by carbon such as carbon nano-tube or carbon nano-plates preferably.The shape of filamentary cathode 13 is not particularly limited, can be consistent with the straight line or the curve shape of glass tube 10.
Luminous for fluorophor 12 integral body are come by electron bombardment, then with the expansion of the interval between filamentary cathode 13 and the fluorophor 12, or apply more high potential, or also can increase filamentary cathode 13 the bar number is set, dwindle fluorophor 12 circumferencial direction each other every.
Possess in the lighting device 1 of above formation, if apply positive voltage, for example positive pulse voltage from the pulse power 17 antianodes 11, then in the electron emission part 29 on concavo-convex (recess 21 and protuberance 22) surface of the lead 20 that constitutes filamentary cathode 13, can produce strong electric field and concentrate, disengage electronics and launch from electron emission part 29.This electrons emitted is made its acceleration and is collided in fluorophor 12 by anode 11, makes fluorophor 12 luminous.Thus, carry out the illumination of lighting device 1.In this lighting device, disengage electronics in order to make electron emission part 29, do not need grid.This is because have concavo-convexly on lead 20 surfaces of filamentary cathode 13, can make electric field concentrate on strongly that this is concavo-convex.Thus, in this lighting device 1, can make simple structure, and applying voltage or its, to control also transfiguration easy.Moreover, because of not needing grid to be set, can make the tube shape of the peripheral device 10 of vacuum thinner in inside.
In lighting device 1, can concaveconvex shape be set equably at the length direction of the outer peripheral face of lead 20, make the generation density of carbon nano-tube of electron emission part 29 impartial to heavens at length direction.Make the emissive porwer of 29 electrons emitted of electron emission part or emission measure for impartial thus, can send illumination light with equalization and high brightness at the length direction of the peripheral device 10 of vacuum on the whole.
Next illustrates the manufacture method of filamentary cathode 13.
At first, as shown in Figure 4, for example,, apply the screw chasing processing of M1 to the hollow lead 20 of the Ni formation of external diameter 1mm, form by thread groove 21 and ridge 22 constitute concavo-convex.At this execution mode, apply the screw chasing processing of M1 coarse thread, form external diameter 1mm, pitch 0.25mm, bottom diameter 0.729mm.Now, the lead 20 to being made of the Ni that has applied after the M1 screw chasing processing uses the DC plasma CVD apparatus shown in the circle 5, and forms the carbon nano-tube of electron emission part.
This DC plasma CVD apparatus, be in vacuum chamber V, the metal cathode electrode plate K2 of Mo and anode electrode plate A34 are up and down subtend to be disposed and constitutes parallel plate electrode, between DC power supply DC antianode battery lead plate A34 and cathode electrode plate K2, the direct voltage that applies regulation is 700V for example, vacuum chamber V possess connection vacuum pump (diagram slightly) exhaust outlet M1, and import the gas introduction port M2 of unstrpped gas.
With the above-mentioned lead 20 that applies after screw chasing is processed, mounting is on the substrate (diagram slightly) of cathode electrode plate K2.Unstrpped gas, the mist of use hydrogen and methane, or the mist of argon gas and carbon monoxide.Unstrpped gas imports in the vacuum chamber V from gas introduction port M2.Between anode electrode plate A34 and cathode electrode plate K2, apply direct voltage by DC power supply DC.Thus, in this vacuum chamber V, produce about 600 ℃～1000 ℃ high-temperature plasma.Lead 20 is exposed to this high-temperature plasma.Thus, on lead 20, form the film that carbon nano-tube or carbon nano-plates constitute.Carbon nano-tube or carbon nano-plates can become on the length about long number μ m.
Fig. 6 expression is made with said method, is for example formed the lead 20 of electron emission part by carbon nano-tube 29, i.e. the cutaway view of the part of filamentary cathode 13 amplification.In the convex-concave surface of lead 20, can promote the generation of carbon nano-tube 29 nuclears especially at protuberance, the nuclear that is produced carries out the zoarium growth and forms carbon nano-tube 29.Thus, make carbon nano-tube 29 be formed at the convex-concave surface of lead 20.Carbon nano-tube 20 side, is almost spread all over lead 20 whole below the lead 20 of mounting on substrate.
So, because of the lead 20 in wire apply screw chasing processing adopt form concavo-convex, so, be easier to form carbon nano-tube film with most individual concavo-convex electron emission part compared with the smooth lead of surperficial no concave-convex.And when constituting above-mentioned lighting device, end can produce electric field and concentrates before the carbon nano-tube 29 of ridge 22 parts is outstanding, promotes the electronics emission, can be with low voltage drive.
Particularly, same with Fig. 1 to Fig. 3, to the filamentary cathode 13 of external diameter 1mm, length 10cm, with 3mm at interval, constitute the band fluorophor metal anode of external diameter 2mm and length 10cm, 10
-6Apply pulse voltage 6KV (1KHz) under the vacuum of Torr and make 1mA/cm
2Current flowing, obtain 200,000 cd/m
2Luminosity.At this execution mode, carry out the screw chasing processing of the M1 screw thread of corresponding JIS (JIS) defined.
Fig. 7 is the cutaway view of other distortion of expression filamentary cathode 13.This filamentary cathode 13 shown in Fig. 8 A, on the surface of the Cu of external diameter 1mm lead 30, forms the Ni layer of several μ m degree thickness by methods such as evaporation or plating, is used as promoting the catalyst metal layer of the growth of carbon nano-tube.Secondly, on the surface 31 of this lead, shown in Fig. 8 B, form the groove 32 of helical form.By the groove 32 that this groove is processed to form, be that pitch L1 is that 0.2mm, degree of depth L2 are that the width L3 of 0.11～0.15mm, convex portion is 0.05～0.1mm, by this groove 32, form concavo-convex on the surface of lead 30.Do not form the convex portion of groove 32, do not have groove processing cutting, the remaining Ni layer 31 that forms as the catalyst metal layer.
In this lead 30, the DC plasma CVD apparatus of use Fig. 5 will form the carbon nano-tube film of electron emission part.When using this DC plasma CVD apparatus to form carbon nano-tube film, as shown in Figure 7, Ni layer 31 still exists, and the convex portion of giving prominence to can promote the generation examined.The nuclear that is produced carries out the zoarium growth and forms carbon nano-tube 33.Thus, carbon nano-tube 33 optionally is formed on the lead 30.So, carbon nano-tube 33 as shown in Figure 7, because of forming Ni layer 31 existing outstanding convex portion, so when constituting lighting device etc., concentrate at the front end electric field of the carbon nano-tube 33 of convex portion, promotes the electronics emission.In addition,, can optionally form carbon nano-tube 33 because of not forming on the Ni layer 31 of groove, thus can not make the intensive configuration of carbon nano-tube, can with between suitably every configuration, thereby obtain the good electron emission characteristics.
Fig. 9 is other distortion of expression filamentary cathode.This filamentary cathode 13 is to use the lead 34 of catalyst metal Ni, with 35 stranded wire rods that form of Cu lead, on this stranded wire rod, uses the DC plasma CVD apparatus of Fig. 5 to form carbon nano-tube CNT film as electron emission part.When using this DC plasma CVD apparatus to form carbon nano-tube film, on the Ni of catalyst metal lead 34, optionally form carbon nano-tube CNT.Thus, on lead 34, form carbon nano-tube CNT.
Figure 10 is other distortion of expression filamentary cathode.Shown in Figure 11 A, on the lead 37 of the Cu of external diameter 1mm etc., evaporation Ni layer 38 is used as the catalyst metal layer that promotes that carbon nano-tube is grown up.The thickness of Ni layer 38 for example is 2 μ m.Then, by high-temperature heating treatment, shown in Figure 11 B, the Ni 38 that constitutes Ni layer 38 is island at certain intervals and separates out.This Ni 38 separates out pattern, can be according to evaporation thickness of Ni etc. and change.Secondly, on lead 37, use the carbon nano-tube film of the DC plasma CVD apparatus generation electron emission part of Fig. 5.When using this DC plasma CVD apparatus to form carbon nano-tube film, as shown in figure 10, on the Ni 38 of catalyst metal, form carbon nano-tube CNT.Thus, on lead 37, optionally form carbon nano-tube CNT.
So on Ni 38,,, can dispose, and obtain the good electron emission characteristics with proper spacing so do not cause the intensive configuration of carbon nano-tube because of optionally forming carbon nano-tube CNT.
In addition, also can be on the surface of lead, the small front end of spicule pressed on lead and form recess on its surface, or particulate sprayed in lead form recess on its surface.Electron emission part also can form other carbon-based material films of carbon nano-plates or class diamond carbon etc.Electron emission part also can be by hot CVD, RF plasma CVD, and microwave plasma CVD or cathode arc wait and form.Lead also can form ring-type and constitutes the ring-type light source.
Consult Figure 12 to Figure 14, other distortion of filamentary cathode are described.The small thread that is made in advance is scattered in the carbon series solvent and makes form slurry.The carbon series solvent can be enumerated turpentine oil, camphorated oil, asbolin, vegetable and animals oils (coconut oil, palm oil) etc.As the lead 40 that forms carbon film, prepare the tungsten wire rod about diameter 1mm.Form most recesses 41 on lead 40 surfaces, remaining position becomes protuberance 42.Lead 40 shapes are not limited to wire rod, also sheet material etc., and material also is not limited to tungsten in addition, also Ni, stainless steel, Fe etc.
Secondly, this slurry is coated the surface of lead 40.On the surface of lead 40, because form most recesses 41, by slurry being coated the surface of lead 40, slurry is then inserted recess 41 and coating all sidedly.With this state, blow away with air or fall by slurry with vibrating screen with lead 40 surfaces, by with additive method, the slurry that will be attached to protuberance 42 is removed.Thus, only in recess 41 residual slurry.
Secondly,, the carbon series solvent is solidified, at the base portion formation carbide 44 of small thread 43 with being coated with lead 40 annealing of slurry.43 chemical bond of small thus thread are in the surface of lead 40.So, only the recess 41 on the surface of lead 40 forms small thread 43, can optionally form the carbon mesentery.
According to the film build method of the carbon mesentery of such formation,, produce so be suitable for an amount because can easily form the carbon mesentery at the convex-concave surface of lead 40.Only the recess 41 on lead 40 surfaces optionally generates the carbon mesentery, can preestablish the film forming position of carbon mesentery, and form the carbon mesentery expeditiously at necessity place.
Consult Figure 15, other distortion of filamentary cathode are described, form concavo-convex on the surface of lead 40.Fill water 45 at this recess 41.At lead 40 surface coated slurries, this slurry is that small thread is scattered in the carbon series solvent, utilizes the hydrophobic effect of water 45, and slurry is only coated protuberance 42.Secondly, the lead 40 of coating sizing-agent is annealed.Thus, the base portion at small thread 43 forms carbon mesentery 44.So, only the protuberance 42 on lead 40 surfaces forms small wire 43.The surperficial no concave-convex of lead 40 also can be formed at the carbon mesentery the whole surface of lead 40.
Present embodiment is the method that is applicable to as form the carbon mesentery on the surface of wire rod, and this wire rod is to use as the light source of the backlight of slim ligthing paraphernalia or display equipment or liquid crystal indicator etc.
Consult Figure 16, other distortion of filamentary cathode are described, this filamentary cathode, the configuration space of small thread that can controlling carbon nanotube etc. and obtain the good electron emission characteristics.This filamentary cathode is to form the electronic conductivity film on the lead that disposes in that small thread is sneaked into ultramicron.Ultramicron is metal, graphite, the ultramicron of diamond etc.Small thread is small and elongated thing, and linearity or curve-like are arranged, and also can possess the cross section of circle, ellipse, rectangle, polygon or other shapes.Small thread is the length-width ratio height, and is longer than the size of ultramicron.On substrate, metal substrate, glass substrate, plastic substrate or ceramic substrate etc. are arranged, the metal that preferred its diameter of lead can dispose ultramicron and small thread is made.Small thread is a main component with carbon preferably, and the person that has the high-aspect-ratio.High-aspect-ratio, preferred 1～hundreds of, be preferably 5～100.Small thread is preferably and is selected from carbon nano-tube, carbon nano-plates, carbon fiber, in graphite fibre, amorphous carbon fiber, the diamond fiber wantonly at least a kind constitute.Carbon nano-tube etc. have high-aspect-ratio, and electric field is concentrated easily, can be with lower voltage emitting electrons, and the life-span is also long in addition.Small thread, it is bigger than the size of ultramicron being preferably its length.To ultramicron, sneak into the small thread bigger wittingly than the dimensions length of ultramicron, the small thread that length is big, its end more protrudes on the substrate or on the lead than ultramicron, electric field can concentrate on this part and make electronics emission, the therefore electronic emission element that can realize having even and high electron emission part bit density according to design.The size of ultramicron, preferably from hundred nano-scale to micron order, the length of small thread is preferably from micron order to ten micron order, the diameter of small thread is preferably from nanoscale to hundred nano-scale.In addition, the thickness of electronic conductivity film is preferably from nanoscale to hundred meter level.What is called to micron order, is meant the scope of 100nm～9 μ m from hundred nano-scale.So-called from micron order to ten micron order, be meant the scope of 1 μ m～99 μ m.What is called to hundred nano-scale, is meant the scope of 1nm～999nm from nanoscale.
The manufacture method of above-mentioned field electron emission device comprises: the 1st operation, and small thread sneaked into ultramicron and be disposed on the substrate or on the lead; The 2nd operation on the substrate that disposes in that small thread is sneaked into ultramicron or on the lead, forms the electronic conductivity film,
According to present embodiment, because small thread sneaked into ultramicron and be disposed on the substrate or on the lead, form the electronic conductivity film again, so the ultramicron of given size is sneaked into the small thread of specific length on design ground, can control the configuration space of the small thread that constitutes the electron emission part position thus, can not resemble in the past the carbon nano-tube of example intensive configuration, and can realize the electronic emission element of even and high electron emission density.The 1st operation preferably comprises following arbitrary operation: small thread is sneaked into ultramicron and the colloidal solution that forms is coated the operation of substrate or lead, or substrate or lead be impregnated in operation in the colloidal solution.The length of small thread, preferably the dimensions length than ultramicron is big.To ultramicron, by sneaking into wittingly by big small thread than the dimensions length of ultra micro placate, the small thread that length is big, because its end more protrudes on the substrate or on the lead in the highland than ultramicron, so electric field can concentrate on this part and emitting electrons, according to designing the electronic emission element that to realize out having even and high electron emission part bit density.Small thread, its length preferably size than above-mentioned ultramicron are big.Shown in Figure 16 A, small thread 54 sneaked into ultramicron 52 and be disposed at the surface of lead 51.Ultramicron 52 is the specific dimensions in the scope from hundred nano-scale to micron order, and for example, average grain diameter is hundreds of nm.Ultramicron do is cleaned refining the dispersion, this dispersion liquid is carried out centrifugation, the colloidal solution of this upper clear liquid is added ethanol carry out the full dose adjustment, further add hydrogen fluoride and carry out centrifugation, get upper clear liquid as particulate colloidal solution.In this particulate colloidal solution, small thread is made to mix dispersion treatment, lead or substrate were flooded several minutes in this treatment fluid, after the drying, promptly shown in Figure 16 B, small thread 54 is sneaked into ultramicron 52 and configuration is formed on lead or the substrate, in addition, also can make 51 rotations of lead or substrate and above-mentioned treatment fluid is dripped or blows out.
Secondly shown in Figure 16 B, use the CVD method to form hundreds of nano thickness and obtain field electron emission device with the noncrystalline carbon film (DLC) 55 of low temperature with the electronic conductivity film.This noncrystalline carbon film 55 is to form machinery, electrical bond with small thread 54.By the field electron emission device of above manufacturing process gained, be to be used as cold cathode in vacuum (10
-7About Torr) in the anode subtend configuration of coating fluorophor, in a vacuum electronics is disengaged by applying voltage, tyco electronics makes its excitation luminescence in fluorophor.The carbon nano-tube of one of small thread is because when electric field is concentrated, can anode hold up, so need not apply special aligning for carbon nano-tube is erect.Exist if the carbon nano-tube longer than the size of ultramicron 52 mixed according to design, carbon nano-tube then becomes higher overshooting shape than other parts, and electric field is concentrated and according to the design emitting electrons.The quantity of this electric field concentrated part and interval can wait according to the blending ratio of carbon nano-tube and design, stipulates.Therefore, can be according to the configuration of design controlling carbon nanotube, with carbon nano-tube with between suitably every configuration, can not make the intensive configuration of carbon nano-tube, and can obtain the good electron emission characteristics thus as example in the past.The configuration space of carbon nano-tube, if consider sieve effect, the length L with respect to carbon nano-tube is preferably L～3L.The electronic emission element of present embodiment, can electric field be concentrated and constitute the electron emission part position and come emitting electrons at small thread, above-mentioned small thread be between the ultramicron of carbon nano-tube at the diamond of hundreds of nm sizes etc. with hundreds of nm between every the small thread of sneaking into etc.Electric field is because capture-effect when the emission current from certain electron emission part position reduces, concentrates on other electron emission part position owing to electric field is close, and is many based on the position numbers of poles of being used as the electron emission source effect, so can guarantee long lifetime.
Ultramicron except that diamond, has the ultramicron of metals such as gold or nickel, the ultramicron (sp of graphite
2The carbon ultramicron that composition is high).Substrate also can make from glass, plastic cement, silicon, pottery, molybdenum, metal etc., also can use to be high electrical conductivity degree n
+Silicon, graphite, metal etc. are as the source of supply of field emission electron.The electronic conductivity film also can be sp
2DLC film that composition is many or graphite film or, metal film.The CVD method is to include magnetic field microwave plasma CVD method, in addition, also can use cathode arc method, ionic depositing method, heated filament utmost point method, small thread, is inclusion carbon nano-plates, carbon fiber, graphite fibre, amorphous carbon fiber, diamond fiber etc.Also can append the different ultramicron of size and make it mix existence.
Further specify other execution modes of the present invention, the field electron emission device of this execution mode is that the configuration with regulation forms the small thread with electronic conductivity on substrate or lead.The configuration of so-called regulation, be meant not intensive configuration, also can be according to selected ultramicron size or apply the design configurations that stipulate at position that activate handles etc., in the present embodiment, because of on substrate or lead, configuration formation with regulation has the small thread of electronic conductivity, so can control the configuration space of the small thread that constitutes the electron emission part position, can make electron emission density high and even.Substrate or lead also can have electronic conductivity.The substrate of substrate preferable alloy, n type silicon, graphite etc.In addition, lead preferable alloy.Ultramicron preferable alloy particle or graphite particle etc.The ultramicron size is from micron order to ten micron order.Ultramicron preferably adds crystal seed (seeding) on substrate or lead.
According to present embodiment, because of on the ultramicron that is arranged on substrate or the lead, forming small thread, use according to design by ultramicron the given size of micron order etc., can form small thread with the specified configuration of corresponding ultramicron size, therefore, the configuration space of the small thread that constitutes the electron emission part position can be controlled, the electronic emission element of even and high electron emission density can be realized.Make substrate or this lead have electronic conductivity and be the basis, small thread is formed on substrate or the lead on the formed catalyst metal.Catalyst metal can be selected from wantonly at least a kind among Ni, Fe, the Co.
According to this execution mode, on the catalyst metal that is formed on substrate or the lead, form small thread, so catalyst metal is formed the configuration of regulation, for example has island at interval by formation, can make small thread form island, therefore, the configuration space of the small thread that constitutes the electron emission part position can be controlled, the electronic emission element of even and high electron emission density can be realized.Also can make substrate or lead have electronic conductivity, form small thread in the activate into treatment sites that applies on this substrate or on this lead.Activate is handled preferred, for example makes surface activation forming scratch on the substrate or on the lead.Substrate or lead, the wantonly at least a kind of formation among preferred Ni, Fe, the Co.If form small thread in the activate into treatment sites that applies on the base stage or on the lead, then can form small thread with the configuration of regulation, therefore, the configuration space of the small thread that constitutes the electron emission part position can be controlled, the electronic emission element of even and high electron emission density can be realized.
The manufacture method of field electron emission device comprises: configuration has the operation of the ultramicron of electronic conductivity on substrate or lead; On this ultramicron, form the operation of small thread with electronic conductivity.In the operation of configuration ultramicron, preferably the colloidal solution of ultramicron is coated on substrate or the lead, or substrate or lead be impregnated in this colloidal solution on substrate or on the lead.At this execution mode, because on the ultramicron that is disposed on substrate or the lead, form small thread, so with the ultramicron of given sizes such as micron order according to design configurations, specified configuration with corresponding ultramicron size forms small thread thus, therefore, the configuration space that constitutes electron emission part small thread only can be controlled, the electronic emission element of even and high electron emission density can be realized.
The manufacture method of the field electron emission device of execution mode comprises: the operation that catalyst metal is formed island on substrate or lead; And on the above-mentioned catalyst metal of aforesaid substrate or above-mentioned lead, form the operation of small thread with electronic conductivity.On substrate or lead, catalyst metal is formed the operation of island, preferably catalyst metal is formed on substrate or the lead thinly, carry out high-temperature heating treatment, catalyst metal is separated out being island (island) on the substrate or on the lead, perhaps, the substrate that alloy constituted or the lead that will contain catalyst metal carry out high-temperature heating treatment, make catalyst metal be island on its surface and separate out.According to present embodiment, can on the substrate or on the lead catalyst metal separated out to be island, form small thread more in the above, therefore, do not cause the small thread that constitutes the electron emission part position intensive, can control its configuration space, and realize the electronic emission element of even and high electron emission density.
The system speed method of the field electron emission device of execution mode comprises: imposing the operation that activate is handled on the substrate or on the lead; And imposing the activate into treatment sites on this substrate or on this lead, form the operation of small thread with electronic conductivity.According to present embodiment, the position that applies the activate processing on substrate or lead forms small thread, imposes the activate processing like that according to becoming specified configuration, for example by forming scratch, can form small thread with the configuration of regulation.Therefore, can control the configuration space of the small thread that constitutes the electron emission part position, not cause the intensive configuration of carbon nano-tube, and realize the electronic emission element of even and high electron emission density.
Figure 17 is the figure of other distortion of expression filamentary cathode.Shown in Figure 17 A, on metal substrate 51, configuration has the ultramicron 52 of electronic conductivity, and ultramicron 52 is the specific dimensions in micron order to the ten micron order scope, and for example, average grain diameter is number μ m.With ultramicron 52, clean refining the dispersion, with its dispersion liquid centrifugation, the colloidal solution of its upper clear liquid is added ethanol carry out the full dose adjustment.Further add hydrogen fluoride and carry out centrifugation, get the treatment fluid of upper clear liquid as particulate colloidal solution.
In this treatment fluid, metal substrate 51 was flooded several minutes, after the drying, then on the metal substrate shown in Figure 17 A 51, ultramicron 52 can be formed to count μ m arranged spaced.Also can make metal substrate 51 rotation and above-mentioned treatment fluid is dripped or blow out.In the liquid of colloidal solution, ultramicron 52 is with the not polymerization and disperse outstanding turbidly each other of the form of single-particle roughly, by handle metal substrate 51 with this colloidal solution, then above-mentioned single-particle configuration can be formed on the metal substrate 51.
Secondly, shown in Figure 17 B, use the DC plasma CVD method that small thread 54 optionally is formed on the ultramicron 52.Small thread 54 selectivity on this ultramicron 52 are grown up, and can illustrate according to the crystalline growth theory.
In addition, on Figure 18 metal substrate that A is shown in 51, evaporation forms for example Ni film 55, is used as the catalyst metal that promotes that small thread is grown up.Secondly, by high-temperature heating treatment, shown in the 18B of field, make Ni be island and separate out with appropriate intervals.Secondly, shown in Figure 18 C, use the CVD method, small thread 54 is optionally grown up on the Ni 55 that is the catalyst metal that island separates out.Not dense set configuration of small thread 51 so,, optionally forms small thread, so can obtain the good electron emission characteristics because of being on the metal substrate 51 on the catalyst metal that island separates out.
In addition, shown in Figure 19 A, regulation place on metal substrate 51 handles formation scratch 60 as activate, exposes the active surface of Ni substrate 51, shown in Figure 19 B, use the CVD method, make small thread 54 optionally be formed at the formation position of scratch 60, can make electric field concentrate and the configuration of the small thread 54 of emitting electrons according to design control, by small thread 54 is disposed with proper spacing, can obtain the good electron emission characteristics.
Claims (21)
1. field electron emission device is characterized in that possessing:
The lead that has concavo-convex wire on the surface; And
Be formed at the convex-concave surface of above-mentioned lead and have the electron emission part of electronic conductivity.
2. field electron emission device according to claim 1 is characterized in that,
Above-mentionedly concavo-convexly impose groove processing and form in above-mentioned conductive line surfaces.
3. field electron emission device according to claim 1 is characterized in that,
Above-mentioned concavo-convex be to form by the surface roughness of setting above-mentioned conductive line surfaces.
4. a field electron emission device is characterized in that,
It possesses the wire rod that stranded many lines form,
Above-mentioned many lines comprise the catalyst metal lead, and above-mentioned catalyst metal forms the catalyst of above-mentioned electron emission part;
On the lead of above-mentioned catalyst metal, form and have the electron emission part of electronic conductivity.
5. according to each described field electron emission device in the claim 1～4, it is characterized in that,
Above-mentioned electron emission part is made of small thread, and above-mentioned small thread is to be selected from carbon nano-tube, carbon nano-plates, carbon fiber, graphite fibre, amorphous carbon fiber, and in the middle of the diamond fiber a kind or multiple combination constitute.
6. lighting device is characterized in that possessing:
With the peripheral device of the vacuum of inner vacuum sealing,
Take in the band fluorophor anode that is disposed at the peripheral device of above-mentioned vacuum inside, and
With the filamentary cathode of above-mentioned band fluorophor anode interval subtend configuration,
Wherein, above-mentioned filamentary cathode is to be made of field electron emission device, and this field electron emission device possesses: the surface has concavo-convex wire lead, and is formed at convex-concave surface and the electron emission part that have electronic conductivity of above-mentioned lead.
7. lighting device according to claim 6 is characterized in that,
The peripheral device of above-mentioned vacuum is the vacuum sealing tube of strip.
8. according to claim 6 or 7 described lighting devices, it is characterized in that,
Above-mentioned electron emission part is by the small thread that is selected from the middle of carbon nano-tube, carbon nano-plates, carbon fiber, graphite fibre, amorphous carbon fiber, the diamond fiber a kind or multiple combination and constitutes.
9. according to claim 6 or 7 described lighting devices, it is characterized in that,
The peripheral device of above-mentioned vacuum is to be made of the straight tube-like glass tube, and above-mentioned band fluorophor anode is the length direction setting along the peripheral device of above-mentioned vacuum, and above-mentioned filamentary cathode is that the length direction along above-mentioned attached fluorophor anode is the subtend configuration.
10. lighting device according to claim 8 is characterized in that,
The peripheral device of above-mentioned vacuum is to be made of the straight tube-like glass tube, and above-mentioned band fluorophor anode is the length direction setting along the peripheral device of above-mentioned vacuum, and above-mentioned filamentary cathode is that the length direction along above-mentioned attached fluorophor anode is the subtend configuration.
11. a lighting device is characterized in that possessing:
With the peripheral device of the almost vacuum-packed vacuum in inside,
Be disposed at the band fluorophor anode of the peripheral device of above-mentioned vacuum inside, and
The filamentary cathode that is the subtend configuration in the peripheral device of above-mentioned vacuum inside with above-mentioned band fluorophor anode,
Wherein, above-mentioned filamentary cathode possesses the electron emission part that the surface has the lead of concavo-convex wire and is formed at the convex-concave surface of above-mentioned lead,
Above-mentioned electron emission part is to be that small thread is sneaked into ultramicron and is configured on the convex-concave surface of this lead with carbon, and forms the electronic conductivity film.
12. lighting device according to claim 11 is characterized in that,
Above-mentioned small thread, be selected from carbon nano-tube, carbon nano-plates, carbon fiber, graphite fibre, amorphous carbon fiber, the diamond fiber at least any and constitute.
13. according to claim 11 or 12 described lighting devices, it is characterized in that,
The length of above-mentioned small thread is bigger than the size of above-mentioned ultramicron.
14. according to claim 11 or 12 described lighting devices, it is characterized in that,
The size of above-mentioned ultramicron is to micron order from hundred nano-scale;
The length of above-mentioned small thread is from micron order to ten micron order;
The diameter of above-mentioned small thread is to hundred nano-scale from nanoscale.
15. lighting device according to claim 13 is characterized in that,
The size of above-mentioned ultramicron is to micron order from hundred nano-scale;
The length of above-mentioned small thread is from micron order to ten micron order;
The diameter of above-mentioned small thread is to hundred nano-scale from nanoscale.
16. lighting device according to claim 11 is characterized in that,
Above-mentioned small thread is to be formed on the lead with the configuration of stipulating.
17. lighting device according to claim 11 is characterized in that,
Above-mentioned small thread is to be formed on the ultramicron, and this ultramicron is configured on the above-mentioned lead and has electronic conductivity.
18. lighting device according to claim 11 is characterized in that,
Above-mentioned small thread is to be formed on formed catalyst metal on the above-mentioned lead.
19. lighting device according to claim 18 is characterized in that,
Above-mentioned catalyst metal is any formation at least among Ni, Fe, the Co.
20. lighting device according to claim 11 is characterized in that,
Above-mentioned small thread is the position of being handled by activate that is formed on the above-mentioned lead.
21. lighting device according to claim 11 is characterized in that,
Above-mentioned lead be by among Ni, Fe, the Co any constitutes at least.
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| JP2004172660A JP4799832B2 (en) | 2004-06-10 | 2004-06-10 | slurry |
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| JP3534236B2 (en) * | 1998-06-18 | 2004-06-07 | 松下電器産業株式会社 | Electron-emitting device, electron-emitting source, method of manufacturing them, image display device using them, and method of manufacturing the same |
| US6630772B1 (en) * | 1998-09-21 | 2003-10-07 | Agere Systems Inc. | Device comprising carbon nanotube field emitter structure and process for forming device |
| JP4207398B2 (en) * | 2001-05-21 | 2009-01-14 | 富士ゼロックス株式会社 | Method for manufacturing wiring of carbon nanotube structure, wiring of carbon nanotube structure, and carbon nanotube device using the same |
| JP2003081618A (en) * | 2001-09-07 | 2003-03-19 | Noritake Itron Corp | Method for forming carbon nanotube film |
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| JP2005350301A (en) | 2005-12-22 |
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