JP4799832B2 - slurry - Google Patents
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- JP4799832B2 JP4799832B2 JP2004172660A JP2004172660A JP4799832B2 JP 4799832 B2 JP4799832 B2 JP 4799832B2 JP 2004172660 A JP2004172660 A JP 2004172660A JP 2004172660 A JP2004172660 A JP 2004172660A JP 4799832 B2 JP4799832 B2 JP 4799832B2
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- carbon
- base material
- slurry
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- carbon film
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Description
本発明は、カーボンナノウォール、カーボンナノチューブ、カーボンナノファイバー等の炭素膜を基材表面に成膜する方法に関する。 The present invention relates to a method for forming a carbon film such as carbon nanowalls, carbon nanotubes, carbon nanofibers on a substrate surface.
従来、カーボンナノウォール、カーボンナノチューブ、カーボンナノファイバー等の炭素膜を基板上に形成する方法として、プラズマＣＶＤがある（例えば、特許文献１参照）。 Conventionally, there is plasma CVD as a method for forming a carbon film such as carbon nanowalls, carbon nanotubes, carbon nanofibers on a substrate (see, for example, Patent Document 1).
プラズマＣＶＤ法においては、例えば、平行平板電極の一方に１３．５６ＭＨｚの高周波電力を印加し、プラズマを生成し、基板を６００℃程度に加熱し、基板へのイオンエネルギーを制御することによって、基板に炭素膜が形成される。 In the plasma CVD method, for example, high frequency power of 13.56 MHz is applied to one of the parallel plate electrodes, plasma is generated, the substrate is heated to about 600 ° C., and the ion energy to the substrate is controlled, thereby controlling the substrate. A carbon film is formed.
このようなプラズマＣＶＤや、その他、熱ＣＶＤ、ＰＶＤにて基材表面に炭素膜を成膜する方法では、成膜工程が複雑となり、コスト高で量産に適さなかった。 In such a method of forming a carbon film on the surface of the substrate by plasma CVD, thermal CVD, or PVD, the film forming process is complicated, and the cost is high and it is not suitable for mass production.
また、カーボンナノウォール、カーボンナノチューブ、カーボンナノファイバー等を予め作成しておき、ターゲットの表面に固定する方法も考えられるが、固定強度が弱いという問題があった。
したがって、本発明においては、基材表面に簡単かつ強固に炭素膜を成膜することを解決しようとする課題とする。 Accordingly, an object of the present invention is to solve the problem of easily and firmly forming a carbon film on the surface of a substrate.
本発明のスラリーは、基材表面に炭素膜を成膜するのに用いるものであって、予め作成しておいたカーボンナノウォール、カーボンナノチューブまたはカーボンナノファイバーからなるカーボンナノ構造体を、テレピン油、しょう脳油、松根油または動植物油からなる炭素系の溶媒に分散させてなるものである。 The slurry of the present invention is used to form a carbon film on the surface of a substrate, and a carbon nanostructure made of carbon nanowalls, carbon nanotubes or carbon nanofibers prepared in advance is used as a terpin oil. , Dispersed in a carbon-based solvent consisting of camphor oil, pine oil or animal and vegetable oils.
本発明の炭素膜の成膜方法によると、スラリーを基材表面に塗布してアニールすることで、簡単に基材表面に炭素膜を成膜することができ、量産に適する。また、アニールによってカーボンナノ構造体の基部にて炭素系の溶媒が炭化物となり、カーボンナノ構造体が炭化物を介して基材表面に化学結合され、基材に強固に固定される。 According to the method for forming a carbon film of the present invention, a carbon film can be easily formed on the surface of the substrate by applying the slurry to the surface of the substrate and annealing, which is suitable for mass production. In addition, the carbon-based solvent becomes a carbide at the base of the carbon nanostructure by annealing, and the carbon nanostructure is chemically bonded to the surface of the base material via the carbide and is firmly fixed to the base material.
本発明によれば、基材表面に簡単かつ強固に炭素膜を成膜することができる。 According to the present invention, a carbon film can be easily and firmly formed on a substrate surface.
本発明の最良の実施形態を図１ないし図３に基づいて説明する。 The best mode for carrying out the present invention will be described with reference to FIGS.
図１は基材の斜視図、図２は基材の部分拡大斜視図、図３は炭素膜を成膜した基材の部分断面図を示している。 1 is a perspective view of the base material, FIG. 2 is a partially enlarged perspective view of the base material, and FIG. 3 is a partial cross-sectional view of the base material on which a carbon film is formed.
まず、カーボンナノウォール、カーボンナノチューブまたはカーボンナノファイバー等のカーボンナノ構造体を、従来からある熱ＣＶＤやプラズマＣＶＤにて作成しておく。 First, carbon nanostructures such as carbon nanowalls, carbon nanotubes, or carbon nanofibers are prepared by conventional thermal CVD or plasma CVD.
予め作成しておいたカーボンナノ構造体を炭素系の溶媒に分散させてスラリーを作成する。炭素系の溶媒としては、テレピン油、しょう脳油、松根油、動植物油（ヤシ油、パーム油）等が挙げられる。 A carbon nanostructure prepared in advance is dispersed in a carbon-based solvent to prepare a slurry. Examples of the carbon-based solvent include turpentine oil, camphor oil, pine root oil, animal and vegetable oils (coconut oil, palm oil) and the like.
炭素膜を成膜する基材１０として、直径１ｍｍのタングステンの線材を用意する。基材１０の表面には多数の凹部１１が形成されており、残りの部位は凸部１２となる。なお、基材１０の形状は線材に限らず、板材等であってもよく、また材質もタングステンに限らず、Ｎｉ，ステンレス，Ｆｅ等であってもよい。 A tungsten wire having a diameter of 1 mm is prepared as the base material 10 on which the carbon film is formed. Many concave portions 11 are formed on the surface of the substrate 10, and the remaining portions become convex portions 12. The shape of the base material 10 is not limited to a wire material, and may be a plate material or the like, and the material is not limited to tungsten, but may be Ni, stainless steel, Fe, or the like.
次に、上記により得られたスラリーを基材１０の表面に塗布する。基材１０の表面には多数の凹部１１が形成されているので、基材１０の表面にスラリーを塗布することで、スラリーが凹部１１に入り込み全面に塗布される。この状態で、基材１０の表面のスラリーをエアーで吹き飛ばすことで、凸部１２に付いたスラリーのみが除去され、凹部１１のみにスラリーが残る。凸部１２に付いたスラリーを除去する方法としては、エアーで吹き飛ばすものに限らず、例えば基材１０に振動を加えて振るい落としてもよい。また、スラリーを入れた容器に基材１０を漬け、全面に塗布した後、凸部１２に付いたスラリーを除去してもよい。 Next, the slurry obtained as described above is applied to the surface of the substrate 10. Since many concave portions 11 are formed on the surface of the base material 10, the slurry enters the concave portions 11 and is applied to the entire surface by applying the slurry to the surface of the base material 10. In this state, the slurry on the surface of the base material 10 is blown off with air, whereby only the slurry attached to the convex portion 12 is removed and the slurry remains only in the concave portion 11. The method of removing the slurry attached to the convex portion 12 is not limited to blowing off with air, and for example, the base material 10 may be shaken off by applying vibration. Alternatively, the substrate 10 may be immersed in a container containing the slurry and applied to the entire surface, and then the slurry attached to the convex portion 12 may be removed.
次に、スラリーを塗布した基材１０をアニールする。アニールは、Ｈ２雰囲気中で８００℃にて行う。なお、Ａｒで希釈したＨ２／ＡｒまたはＮ２雰囲気中で行ってもよく、また温度も８００℃に限らない。 Next, the substrate 10 coated with the slurry is annealed. Annealing is performed at 800 ° C. in an H 2 atmosphere. Incidentally, it may be carried out H 2 / Ar or N 2 atmosphere diluted with Ar, also not limited to temperature 800 ° C..
アニールの結果、炭素系の溶媒が固化し、カーボンナノ構造体１３の基部において炭化物１４が形成され、カーボンナノ構造体１３が基材１０の表面に化学結合によって強固に固定される。 As a result of the annealing, the carbon-based solvent is solidified, the carbide 14 is formed at the base of the carbon nanostructure 13, and the carbon nanostructure 13 is firmly fixed to the surface of the substrate 10 by chemical bonding.
以上のようにして、基材１０の表面の凹部１１のみにカーボンナノ構造体１３が形成され、炭素膜を選択的に成膜することができる。 As described above, the carbon nanostructures 13 are formed only in the recesses 11 on the surface of the base material 10, and a carbon film can be selectively formed.
このように構成された炭素膜の成膜方法によると、スラリーを基材１０の表面に塗布してアニールすることで、簡単に基材１０の表面に炭素膜を成膜することができ、量産に適する。 According to the carbon film forming method configured as described above, the carbon film can be easily formed on the surface of the base material 10 by applying the slurry to the surface of the base material 10 and annealing, and mass production. Suitable for.
また、アニールによってカーボンナノ構造体１３の基部にて炭素系の溶媒が炭化物１４となり、カーボンナノ構造体１３が炭化物１４を介して基材１０の表面に化学結合され、基材１０に強固に固定される。 Further, the carbon-based solvent becomes the carbide 14 at the base of the carbon nanostructure 13 by annealing, and the carbon nanostructure 13 is chemically bonded to the surface of the base material 10 via the carbide 14 and is firmly fixed to the base material 10. Is done.
さらに、基材１０の表面の凹部１１のみに炭素膜を選択的に成膜することができ、炭素膜が成膜される部位を予め設定することができ、必要箇所のみに炭素膜を成膜することができ効率的である。 Furthermore, the carbon film can be selectively formed only on the concave portion 11 on the surface of the base material 10, the part where the carbon film is formed can be set in advance, and the carbon film is formed only at the necessary part. Can be efficient.
本発明の他の実施形態を図４に基づいて説明する。図４は炭素膜を成膜した基材の部分断面図を示している。 Another embodiment of the present invention will be described with reference to FIG. FIG. 4 shows a partial cross-sectional view of a base material on which a carbon film is formed.
基材１０の表面には凹凸が形成されており、凹部１１に水１５を充填し、基材１０の表面に、カーボンナノ構造体を炭素系の溶媒に分散させてなるスラリーを塗布することで、水１５の撥水作用により、スラリーは凸部１２のみに塗布される。 Concavities and convexities are formed on the surface of the substrate 10, the recess 11 is filled with water 15, and a slurry obtained by dispersing carbon nanostructures in a carbon-based solvent is applied to the surface of the substrate 10. The slurry is applied only to the convex portion 12 by the water repellent action of the water 15.
次に、スラリーを塗布した基材１０をアニールし、炭素系の溶媒を固化し、カーボンナノ構造体１３の基部において炭化物１４を形成することで、化学結合によって強固に固定される。 Next, the base material 10 to which the slurry is applied is annealed, the carbon-based solvent is solidified, and the carbide 14 is formed at the base of the carbon nanostructure 13, thereby being firmly fixed by chemical bonding.
以上のようにして、基材１０の表面の凸部１２のみにカーボンナノ構造体１３が形成され、炭素膜を選択的に成膜することができる。 As described above, the carbon nanostructures 13 are formed only on the convex portions 12 on the surface of the substrate 10, and a carbon film can be selectively formed.
このように構成された炭素膜の成膜方法においても、図１ないし図３の例と同様の効果が得られる。 Also in the carbon film forming method configured as described above, the same effects as in the examples of FIGS. 1 to 3 can be obtained.
なお、基材の表面に凹凸がなく、基材の全表面に炭素膜が成膜されるものでもよい。 In addition, there may be no unevenness | corrugation on the surface of a base material, and a carbon film may be formed in the whole surface of a base material.
本発明は、薄型の照明器具やディスプレイ表示装置、あるいは液晶表示装置のバックライトなどの線状光源として使用する線材表面に炭素膜を成膜する方法として有用である。 INDUSTRIAL APPLICABILITY The present invention is useful as a method for forming a carbon film on the surface of a wire used as a linear light source such as a thin luminaire, a display display device, or a backlight of a liquid crystal display device.
１０ 線材（基材）
１１ 凹部
１２ 凸部
１３ カーボンナノウォール（カーボンナノ構造体）
１４ 炭化物
１５ 水
10 Wire material (base material)
11 Concave part 12 Convex part 13 Carbon nanowall (carbon nanostructure)
14 Carbide 15 Water
Claims (1)
予め作成しておいたカーボンナノウォール、カーボンナノチューブまたはカーボンナノファイバーからなるカーボンナノ構造体を、テレピン油、しょう脳油、松根油または動植物油からなる炭素系の溶媒に分散させてなるスラリー。A slurry obtained by dispersing a carbon nanostructure made of carbon nanowalls, carbon nanotubes or carbon nanofibers prepared in advance in a carbon-based solvent made of turpentine oil, camphor oil, pine root oil or animal or vegetable oil.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004172660A JP4799832B2 (en) | 2004-06-10 | 2004-06-10 | slurry |
| EP04028326A EP1605489A3 (en) | 2004-06-10 | 2004-11-30 | Field electron emission device and lighting device |
| KR1020040101124A KR101150089B1 (en) | 2004-06-10 | 2004-12-03 | Field electron emission device and lighting device |
| CN 200410098025 CN1707726A (en) | 2004-06-10 | 2004-12-03 | Field electron emission device and lighting device |
| US11/002,984 US20050275329A1 (en) | 2004-06-10 | 2004-12-03 | Field electron emission device and lighting device |
| TW093137320A TW200540910A (en) | 2004-06-10 | 2004-12-03 | Field electron emission component and lighting equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004172660A JP4799832B2 (en) | 2004-06-10 | 2004-06-10 | slurry |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005350301A JP2005350301A (en) | 2005-12-22 |
| JP4799832B2 true JP4799832B2 (en) | 2011-10-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004172660A Expired - Fee Related JP4799832B2 (en) | 2004-06-10 | 2004-06-10 | slurry |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4799832B2 (en) |
| CN (1) | CN1707726A (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3534236B2 (en) * | 1998-06-18 | 2004-06-07 | 松下電器産業株式会社 | Electron-emitting device, electron-emitting source, method of manufacturing them, image display device using them, and method of manufacturing the same |
| US6630772B1 (en) * | 1998-09-21 | 2003-10-07 | Agere Systems Inc. | Device comprising carbon nanotube field emitter structure and process for forming device |
| JP4207398B2 (en) * | 2001-05-21 | 2009-01-14 | 富士ゼロックス株式会社 | Method for manufacturing wiring of carbon nanotube structure, wiring of carbon nanotube structure, and carbon nanotube device using the same |
| JP2003081618A (en) * | 2001-09-07 | 2003-03-19 | Noritake Itron Corp | Method for forming carbon nanotube film |
-
2004
- 2004-06-10 JP JP2004172660A patent/JP4799832B2/en not_active Expired - Fee Related
- 2004-12-03 CN CN 200410098025 patent/CN1707726A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN1707726A (en) | 2005-12-14 |
| JP2005350301A (en) | 2005-12-22 |
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