CN1692326A - 用于多核心微处理器热管理的装置 - Google Patents
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Abstract
本发明描述了一种装置,用来管理具有多核心微处理器的集成电路的温度。特别地,在遍及每一个微处理器核心的各个潜在的热点处放置热传感器。热管理单元监视这些热传感器。如果热传感器识别出热点,热管理单元据此调节那个微处理器核心的操作频率和电压。
Description
技术领域
本发明属于集成电路设计领域。更具体而言,本发明涉及用于在单个管芯(die)上的多个处理器核心的热管理以及功率管理的方法和装置。
背景技术
集成电路(IC)是由许多制作在单个硅晶体芯片或其他半导体材料上的连接(connected)电路元件(比如,晶体管和电阻器)组成的器件。在操作过程中,IC消耗功率,使得该IC的温度上升。过热的IC可潜在地导致性能降低,甚至导致操作故障。
IC的一个实例是微处理器。由于更高的操作频率,就每一种新的微型体系结构(micro-architecture)而言,微处理器的发展趋于增加功率消耗和耗散(dissipation)。具体而言,具有多个处理器核心的服务器级处理器的功率一般由于不断增加的处理器密度而受到限制。处理器核心一般包括指令寄存器、输入/输出总线、浮点单元、整数执行单元、L0高速缓冲存储器(cache)和L1高速缓冲存储器。
为了有助于降低功率耗散,希望对单个IC上的多个处理器核心进行热(thermal)和功率管理。其目的是在将结(junction)温度保持在每个处理器核心的可靠性限度以下的同时,获得最大的计算处理量。
附图说明
本发明的实施方案以举例的方式而非以附图中的图形予以图示说明,在附图中,类似的标号表示类似的元件,其中:
图1A是多核心处理器平面布置图的一个实施方案,该多核心处理器具有多个管芯上的热传感器;
图1B是具有多个热传感器的处理器核心的一个实施方案;
图2是热传感器电路的一个实施方案;
图3是热管理单元电路的一个实施方案,该热管理单元电路计算每个处理器核心的频率。
具体实施方式
在随后的详细描述中,阐述了许多具体的细节以提供对本发明的全面理解。但是,本领域的普通技术人员将认识到,没有这些具体细节时也可以实施本发明。在其他情形,并没有详细地描述公知的方法、程序、部件和电路,以免模糊本发明。
图1A描绘了多核心处理器100,其具有多个管芯上的热传感器。对于本发明的这个实施方案,多核心处理器100包括8个处理器核心110。每个处理器核心110都是单独的处理器或处理单元。该多核心处理器并不限于具有8个处理器核心。处理器核心可以包括浮点单元、整数执行单元、L0高速缓冲存储器和L1高速缓冲存储器。此外,处理器核心110还可以包括多个热传感器115。包括多个热传感器115的处理器核心描绘在图1B中。
对于本发明的这个实施方案,每个处理器核心110都耦合到L2高速缓冲存储器120。但是,处理器核心110并不限于具有单独的L2高速缓冲存储器120。例如,多个处理器核心110可以被耦合到单个高速缓冲存储器。
处理器核心110和L2高速缓冲存储器120被耦合到输入/输出(I/O)130以及热管理单元(TMU)140。I/O 130作为该多核心处理器与外部设备之间的硬件接口。TMU 140被定位于管芯的中央位置,并且接收热传感器115的输出。热传感器115可以靠近处理器核心110的热点(hot spot)(比如,浮点单元或整数执行单元)放置。处理器核心110可以具有许多的热点。因此,对于每个处理器核心110可使用多个热传感器115。
TMU 140监视热传感器115温度,并且确保处理器100实现最大的处理量而没有任何热点超过最大所允许的结温度。TMU 140可以由软件编程来优化最大综合处理量,或者在以其他线程为代价的情形下给予运行于处理器上的几个应用线程优先权。例如,使用操作***可以对TMU 140进行编程。
TMU 140控制每个处理器核心110的操作频率和操作电压。对于本发明的这个实施方案,每个处理器核心110都具有不同的操作频率,而整个处理器100仅具有两个电压。处理器100的顶端处理器核心110操作于第一电压,底端处理器核心110操作于第二电压。但是,本发明并不限于仅具有两个操作电压的处理器100。处理器核心110的频率被协调以匹配核心110能够在每个操作电压运行的最大频率。因此,顶端处理器核心110的频率由第一电压限制,底端处理器核心110的频率由第二电压限制。
热传感器115可以使用可调节的分界点(trip point)来实现。当给定热点的温度超过该预定的分界点时,则通知TMU 140。TMU然后可以调节那个处理器核心110的频率或那组核心的电压以将该热点的热耗散降低到分界点以下。注意,功率是由如下的表达式定义的:
P=V2*C*f (等式1)
其中,P代表功率,V代表电压,C代表电容,f是频率。从等式1,可以看出降低频率将会线性地降低功率耗散。或者,处理核心110的功率可以通过降低电压值来减少。但是,当一组处理器核心110的工作电压被调节时,那些核心的频率也需要被相应地调节,因为每个处理器核心110的最大频率受操作电压的限制。
在图2中示出了热传感器电路的实施方案。该热传感器电路包括温度-电压转换器210、电平转换器(shifter)220、环形振荡器230以及缓冲器240。温度-电压转换器210可以包括参考偏压212和热二极管(thermal diode)214。温度-电压转换器210产生范围有限的输出电压。例如,该输出电压可以是在0.3伏特到0.7伏特的范围内。电平转换器220取得温度-电压转换器的输出,并产生偏置电压。所产生的这个电压然后被输入到环形振荡器230。
对于本发明的这个实施方案,环形振荡器包括多个反相器232。CMOS反相器232的数量是大于1的奇数,以产生具有一频率的切换信号(toggling signal)。在振荡器230中反相器232的数目以及每个反相器232的延迟有助于确定所产生的频率。多个反相器232中每一个都被耦合到下拉(pull down)晶体管234。由振荡器230所产生信号的频率和强度也部分地依赖于下拉晶体管234以及控制该下拉晶体管234的偏置电压。于是,由振荡器230所产生信号的频率是热二极管214所检测到的温度的函数。温度增加会导致由振荡器230所产生信号的频率下降,而温度下降会导致由振荡器230所产生信号的频率增加。缓冲器240确保由振荡器230所产生信号具有足够到达TMU的驱动强度。
对于本发明的另一个实施方案,环形振荡器230包括多个差分放大器。与上面所描述的反相器设计类似,差分放大器的数目是大于1的整数。每个差分放大器可以由电平转换器220所产生的偏置电压来偏置。
在图3中描绘了处理器中的TMU电路的实施方案。该TMU电路包括多个计数器310。每个计数器310都被耦合到数字控制器340。而且,第一计数器310可以被耦合到参考热传感器320。所有其他计数器310可以被耦合到位于管芯的远距区域(比如,处理器核心)的热传感器330。所述远距热传感器330由数字控制器340监视。具体地,数字控制器340可以监视来自每个远距热传感器330的频率编码温度信息。数字控制器340将所述远距温度与由参考热传感器320检测的本地温度参考值进行比较。
对于本发明的一个实施方案,数字控制器340可以将第一计数器310计数到预定值的所需时间与第二计数器310计数到同样的预定值的所需时间进行比较,第一计数器310由参考热传感器320所产生的第一信号计时,第二计数器310由远距热传感器330所产生的第二信号计时。数字控制器340控制计数器310何时开始和停止计数。如果由参考热传感器320计时的计数器310在由远距热传感器330计时的计数器310之前达到目标值,那么数字控制器降低处理核心的操作频率或操作电压。类似地,如果由远距热传感器330计时的计数器310在由参考热传感器320计时的计数器310之前达到目标值,那么数字控制器增加处理核心的操作频率或操作电压。因此,对每个处理器核心电压和频率的调节是由数字控制器340确定,以最大化处理器的综合计算处理量。每个处理核心的操作频率可以通过调节为每个核心提供时钟的锁相环(Phase Locked Loop,PLL)来调节。
在数字控制器340内的查询表可以确定相对频率和电压的调节值。于是,如果在参考热传感器320和远距热传感器330之间的温度差异大,那么所述调节将会比该温度差异小时要大。例如,为了调节处理核心的频率,数字控制器340可以查询PLL的倍率(multiplyingratio)值。在那个处理核心中,所选倍率的值是参考热传感器320和远距热传感器330之间的温度差异的函数。由PLL产生的时钟的频率依赖于所选择的倍率。
可替换地,该调节值可以是单步值。例如,数字控制器340可以被耦合到产生处理器时钟的PLL的振荡结构。在这种实施方式下,只要在远距热传感器330和参考热传感器320之间的所检测到温度差异大于指定的限度,那么将由数字控制器340以步进值进行频率调节或电压调节。尽管该单步进值实施方式可能不会那么快地降低处理器的功率耗散,但是它降低了设计的复杂度并比查找表实施方式占用较少的管芯面积。
对于本发明的另一个实施方案,数字控制器340将给定时间段内由参考热传感器320所产生信号的信号转变(transition)的数目与由远距热传感器330所产生信号的信号转变的数目相比较。计数器310被用来计数来自参考热传感器320和远距热传感器330的信号的信号转变。在给定时间段内计数值越大,所检测的区域就越凉。因此,如果参考热传感器320的区域被确定为比给定的远距热传感器330的区域凉,那么数字控制器340降低那个远距热传感器330所在的处理器核心的操作频率或操作电压。类似地,如果参考热传感器320的区域被确定为比远距热传感器330的区域热,那么数字控制器340增加那个远距热传感器330所在的处理器核心的操作频率或操作电压。
在前面的说明书中,已经参考本发明的具体示例性实施方案对它进行了描述。但是,清楚的是,在不偏离所附权利要求书所设定的本发明的较宽的精神和范围的情形,可以对本发明进行各种修改和改变。因此,说明书和附图应该被视为说明性而非限制性的。
Claims (25)
1.一种集成电路,包括:
m个处理器核心,其中,m是大于1的整数;
n个热传感器,所述n个热传感器被耦合到所述m个处理器核心,其中,n是大于1的整数,所述n个热传感器提供表示所述m个处理器核心的温度的信号;
热管理单元,所述热管理单元被耦合到所述n个热传感器以监视所述n个热传感器的温度,其中,所述热管理单元将所述m个处理器核心维持在预定操作温度范围内。
2.根据权利要求1的集成电路,还包括:
高速缓冲存储器,所述高速缓冲存储器被耦合到所述m个处理器核心。
3.根据权利要求1的集成电路,其中,如果所述n个热传感器中的一个超过预定温度,那么所述热管理单元调节所述m个处理器核心中的一个的操作频率。
4.根据权利要求1的集成电路,其中,如果所述n个热传感器中的一个超过预定温度,那么所述热管理单元调节所述m个处理器核心中的一个的操作电压。
5.根据权利要求1的集成电路,其中,所述n个热传感器被放置在所述m个处理器核心的潜在热点上。
6.一种装置,包括:
温度-电压转换器电路,所述温度-电压转换器电路输出电压,所述电压依赖于所检测到的处理器温度;以及
环形振荡器,所述环形振荡器被耦合到所述温度-电压转换器电路,其中,所述环形振荡器产生数字信号,所述数字信号具有的频率是所述所检测到的温度的函数。
7.根据权利要求6的装置,还包括:
电平转换器,所述电平转换器被耦合到所述温度-电压转换器电路,其中,所述电平转换器读取来自所述温度-电压转换器电路的电压输出并且产生偏置电压。
8.根据权利要求7的装置,其中,由所述电平转换器所产生的偏置电压偏置所述环形振荡器。
9.根据权利要求8的装置,其中,所述环形振荡器包括多个反相器,其中,所述多个反相器中的每一个都被耦合到偏置所述环形振荡器的下拉晶体管。
10.根据权利要求6的装置,其中,所述数字信号的频率与所述所检测到的温度成比例。
11.根据权利要求10的装置,其中,如果所述所检测到的温度增加,那么所述数字信号频率降低。
12.根据权利要求6的装置,还包括:
计数器,所述计数器计数所述数字信号在一时间段中的循环数目。
13.根据权利要求12的装置,还包括:
数字控制器,所述数字控制器将所述数字信号的循环数目与参考值相比较,其中,如果所述循环数目大于所述参考值,那么所述操作频率被降低。
14.根据权利要求13的装置,其中,如果所述循环数目小于所述参考值,那么所述处理器的操作频率增加。
15.根据权利要求13的装置,其中,操作频率被降低,其中所述数字控制器调节锁相环,其中所述锁相环为所述处理器提供时钟。
16.根据权利要求15的装置,其中,所述数字控制器调节所述锁相环的倍率。
17.根据权利要求15的装置,其中,所述数字控制器调节所述锁相环的振荡器。
18.一种***,包括:
第一热传感器,所述第一热传感器检测所述***的第一温度并且产生第一数字信号,所述第一数字信号具有表示所述第一温度的频率;
第二热传感器,所述第二热传感器检测所述***的第二温度并且产生第二数字信号,所述第二数字信号具有表示所述第二温度的频率,其中所述第二温度是参考温度;
第一计数器,所述第一计数器被耦合到所述第一热传感器并且由所述第一数字信号使得所述第一计数器能够工作,所述第一计数器响应于所述第一数字信号的转变以第一方向计数;
第二计数器,所述第二计数器被耦合到所述第二热传感器并且由所述第二数字信号使得所述第二计数器能够工作,所述第二计数器响应于所述第二数字信号的转变以第二方向计数。
19.根据权利要求18的***,还包括:
数字控制器,所述数字控制器被耦合到所述第一计数器和第二计数器,其中所述数字控制器将所述第一计数器的计数值和第二计数器的计数值相比较,其中,如果第二计数器在第一计数器之前到达目标值,那么所述数字控制器降低所述***的操作电压。
20.根据权利要求19的***,其中,所述数字控制器调节所述***的操作频率。
21.一种方法,包括:
为热管理单元编程温度分界点;
监视放置在处理器内的多个热传感器,所述处理器具有第一处理器核心和第二处理器核心;以及
如果在第一处理器核心中的热传感器处的温度超过所述所编程的温度分界点,那么调节所述第一处理器核心的操作频率。
22.根据权利要求21的方法,还包括:
如果所述热传感器处的温度超过所述所编程的温度分界点,那么调节所述第一处理器核心的操作电压。
23.根据权利要求22的方法,其中,所述操作电压调节是根据查找表进行的,其中,所述所编程的温度分界点被超过的越多,所述操作电压被调节得越大。
24.根据权利要求21的方法,其中,所述多个热传感器检测所述第一处理器核心的浮点单元的温度。
25.根据权利要求21的方法,其中,所述多个热传感器检测所述第一处理器核心的整数执行单元的温度。
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CN100334523C (zh) | 2007-08-29 |
WO2004019195A3 (en) | 2004-09-16 |
EP3486745A1 (en) | 2019-05-22 |
US6908227B2 (en) | 2005-06-21 |
US7144152B2 (en) | 2006-12-05 |
EP1552367B1 (en) | 2019-01-09 |
US20040037346A1 (en) | 2004-02-26 |
US20050180488A1 (en) | 2005-08-18 |
TW200406668A (en) | 2004-05-01 |
EP1552367A2 (en) | 2005-07-13 |
AU2003265622A8 (en) | 2004-03-11 |
TWI226533B (en) | 2005-01-11 |
WO2004019195A2 (en) | 2004-03-04 |
AU2003265622A1 (en) | 2004-03-11 |
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