CN1685502A - 高频信号传输构件 - Google Patents
高频信号传输构件 Download PDFInfo
- Publication number
- CN1685502A CN1685502A CNA2003801001336A CN200380100133A CN1685502A CN 1685502 A CN1685502 A CN 1685502A CN A2003801001336 A CNA2003801001336 A CN A2003801001336A CN 200380100133 A CN200380100133 A CN 200380100133A CN 1685502 A CN1685502 A CN 1685502A
- Authority
- CN
- China
- Prior art keywords
- frequency signal
- circuit
- transmission structure
- signal transmission
- structure according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008054 signal transmission Effects 0.000 title claims description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 118
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 230000008878 coupling Effects 0.000 claims description 14
- 238000010168 coupling process Methods 0.000 claims description 14
- 238000005859 coupling reaction Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims 2
- 230000005764 inhibitory process Effects 0.000 claims 1
- 238000007667 floating Methods 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000000452 restraining effect Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 48
- 238000002474 experimental method Methods 0.000 description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005452 bending Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (30)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP337327/2002 | 2002-11-21 | ||
JP2002337327A JP4134694B2 (ja) | 2002-05-23 | 2002-11-21 | 高周波信号用回路基板 |
JP2002345420A JP4089402B2 (ja) | 2002-11-28 | 2002-11-28 | 半導体装置 |
JP345420/2002 | 2002-11-28 | ||
PCT/JP2003/014659 WO2004047169A1 (en) | 2002-11-21 | 2003-11-18 | High frequency signal transmission structure |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1685502A true CN1685502A (zh) | 2005-10-19 |
CN1685502B CN1685502B (zh) | 2010-07-21 |
Family
ID=32328337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2003801001336A Expired - Lifetime CN1685502B (zh) | 2002-11-21 | 2003-11-18 | 高频信号传输构件 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7012490B2 (zh) |
EP (1) | EP1454356A1 (zh) |
KR (1) | KR100651038B1 (zh) |
CN (1) | CN1685502B (zh) |
AU (1) | AU2003279577A1 (zh) |
TW (1) | TWI235416B (zh) |
WO (1) | WO2004047169A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7342312B2 (en) | 2004-09-29 | 2008-03-11 | Rohm Co., Ltd. | Semiconductor device |
US8183955B2 (en) | 2006-07-07 | 2012-05-22 | Nxp B.V. | Circuit comprising transmission lines |
US7872350B2 (en) * | 2007-04-10 | 2011-01-18 | Qimonda Ag | Multi-chip module |
JP4787296B2 (ja) * | 2008-07-18 | 2011-10-05 | Tdk株式会社 | 半導体内蔵モジュール及びその製造方法 |
TWI481877B (zh) * | 2012-11-12 | 2015-04-21 | Mpi Corp | Probe card structure |
TWI481879B (zh) * | 2012-11-12 | 2015-04-21 | Mpi Corp | Probe card structure |
TWI481878B (zh) * | 2012-11-12 | 2015-04-21 | Mpi Corp | Probe card structure |
TWI479157B (zh) * | 2012-11-12 | 2015-04-01 | Mpi Corp | Probe card structure |
KR102319407B1 (ko) * | 2014-12-19 | 2021-11-01 | 삼성전자주식회사 | 기판 스트립 및 이를 이용한 반도체 패키지의 제조 방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US54939A (en) * | 1866-05-22 | Improvement in machines for attaching clasps to skirt-hoops | ||
US36099A (en) * | 1862-08-05 | Improved fan-shaped sail | ||
US5872393A (en) * | 1995-10-30 | 1999-02-16 | Matsushita Electric Industrial Co., Ltd. | RF semiconductor device and a method for manufacturing the same |
JP2000151207A (ja) * | 1998-11-12 | 2000-05-30 | Mitsubishi Electric Corp | 低域通過フィルタ |
US6479900B1 (en) * | 1998-12-22 | 2002-11-12 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP3710652B2 (ja) | 1999-08-03 | 2005-10-26 | 三菱電機株式会社 | ストリップライン給電装置 |
JP2001308547A (ja) * | 2000-04-27 | 2001-11-02 | Sharp Corp | 高周波多層回路基板 |
SG99939A1 (en) * | 2000-08-11 | 2003-11-27 | Casio Computer Co Ltd | Semiconductor device |
JP3583706B2 (ja) * | 2000-09-28 | 2004-11-04 | 株式会社東芝 | 高周波信号伝送用回路基板、その製造方法及びそれを用いた電子機器 |
JP2002124593A (ja) | 2000-10-16 | 2002-04-26 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP3939504B2 (ja) * | 2001-04-17 | 2007-07-04 | カシオ計算機株式会社 | 半導体装置並びにその製造方法および実装構造 |
JP4248761B2 (ja) * | 2001-04-27 | 2009-04-02 | 新光電気工業株式会社 | 半導体パッケージ及びその製造方法並びに半導体装置 |
-
2003
- 2003-11-18 AU AU2003279577A patent/AU2003279577A1/en not_active Abandoned
- 2003-11-18 EP EP03772863A patent/EP1454356A1/en not_active Withdrawn
- 2003-11-18 CN CN2003801001336A patent/CN1685502B/zh not_active Expired - Lifetime
- 2003-11-18 WO PCT/JP2003/014659 patent/WO2004047169A1/en active Application Filing
- 2003-11-18 KR KR1020047011265A patent/KR100651038B1/ko not_active IP Right Cessation
- 2003-11-20 TW TW092132488A patent/TWI235416B/zh not_active IP Right Cessation
-
2004
- 2004-06-30 US US10/880,920 patent/US7012490B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040239439A1 (en) | 2004-12-02 |
TWI235416B (en) | 2005-07-01 |
AU2003279577A1 (en) | 2004-06-15 |
CN1685502B (zh) | 2010-07-21 |
WO2004047169A1 (en) | 2004-06-03 |
TW200419651A (en) | 2004-10-01 |
EP1454356A1 (en) | 2004-09-08 |
KR20040081141A (ko) | 2004-09-20 |
KR100651038B1 (ko) | 2006-12-01 |
US7012490B2 (en) | 2006-03-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ZHAOZHUANGWEI CO., LTD. Free format text: FORMER OWNER: CASIO COMPUTER CO., LTD. Effective date: 20120316 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120316 Address after: Tokyo, Japan Patentee after: Zhaozhuang Micro Co.,Ltd. Address before: Tokyo, Japan Patentee before: CASIO COMPUTER Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20170406 Address after: Kagawa Patentee after: AOI ELECTRONICS Co.,Ltd. Address before: Kanagawa Patentee before: Zhao Tan Jing Co.,Ltd. Effective date of registration: 20170406 Address after: Kanagawa Patentee after: Zhao Tan Jing Co.,Ltd. Address before: Tokyo, Japan Patentee before: Zhaozhuang Micro Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 20100721 |
|
CX01 | Expiry of patent term |