KR100651038B1 - 고주파신호 전송구조 - Google Patents

고주파신호 전송구조 Download PDF

Info

Publication number
KR100651038B1
KR100651038B1 KR1020047011265A KR20047011265A KR100651038B1 KR 100651038 B1 KR100651038 B1 KR 100651038B1 KR 1020047011265 A KR1020047011265 A KR 1020047011265A KR 20047011265 A KR20047011265 A KR 20047011265A KR 100651038 B1 KR100651038 B1 KR 100651038B1
Authority
KR
South Korea
Prior art keywords
high frequency
frequency signal
wiring
signal transmission
transmission structure
Prior art date
Application number
KR1020047011265A
Other languages
English (en)
Korean (ko)
Other versions
KR20040081141A (ko
Inventor
유타카 아오키
사야카 니시카도
Original Assignee
가시오게산키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002337327A external-priority patent/JP4134694B2/ja
Priority claimed from JP2002345420A external-priority patent/JP4089402B2/ja
Application filed by 가시오게산키 가부시키가이샤 filed Critical 가시오게산키 가부시키가이샤
Publication of KR20040081141A publication Critical patent/KR20040081141A/ko
Application granted granted Critical
Publication of KR100651038B1 publication Critical patent/KR100651038B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020047011265A 2002-11-21 2003-11-18 고주파신호 전송구조 KR100651038B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002337327A JP4134694B2 (ja) 2002-05-23 2002-11-21 高周波信号用回路基板
JPJP-P-2002-00337327 2002-11-21
JP2002345420A JP4089402B2 (ja) 2002-11-28 2002-11-28 半導体装置
JPJP-P-2002-00345420 2002-11-28
PCT/JP2003/014659 WO2004047169A1 (en) 2002-11-21 2003-11-18 High frequency signal transmission structure

Publications (2)

Publication Number Publication Date
KR20040081141A KR20040081141A (ko) 2004-09-20
KR100651038B1 true KR100651038B1 (ko) 2006-12-01

Family

ID=32328337

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047011265A KR100651038B1 (ko) 2002-11-21 2003-11-18 고주파신호 전송구조

Country Status (7)

Country Link
US (1) US7012490B2 (zh)
EP (1) EP1454356A1 (zh)
KR (1) KR100651038B1 (zh)
CN (1) CN1685502B (zh)
AU (1) AU2003279577A1 (zh)
TW (1) TWI235416B (zh)
WO (1) WO2004047169A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7342312B2 (en) 2004-09-29 2008-03-11 Rohm Co., Ltd. Semiconductor device
EP2041831A1 (en) 2006-07-07 2009-04-01 Nxp B.V. Circuit comprising transmission lines
US7872350B2 (en) * 2007-04-10 2011-01-18 Qimonda Ag Multi-chip module
JP4787296B2 (ja) * 2008-07-18 2011-10-05 Ｔｄｋ株式会社 半導体内蔵モジュール及びその製造方法
TWI479157B (zh) * 2012-11-12 2015-04-01 Mpi Corp Probe card structure
TWI481879B (zh) * 2012-11-12 2015-04-21 Mpi Corp Probe card structure
TWI481878B (zh) * 2012-11-12 2015-04-21 Mpi Corp Probe card structure
TWI481877B (zh) * 2012-11-12 2015-04-21 Mpi Corp Probe card structure
KR102319407B1 (ko) * 2014-12-19 2021-11-01 삼성전자주식회사 기판 스트립 및 이를 이용한 반도체 패키지의 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US54939A (en) * 1866-05-22 Improvement in machines for attaching clasps to skirt-hoops
US36099A (en) * 1862-08-05 Improved fan-shaped sail
US5872393A (en) * 1995-10-30 1999-02-16 Matsushita Electric Industrial Co., Ltd. RF semiconductor device and a method for manufacturing the same
JP2000151207A (ja) * 1998-11-12 2000-05-30 Mitsubishi Electric Corp 低域通過フィルタ
US6479900B1 (en) * 1998-12-22 2002-11-12 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same
JP3710652B2 (ja) * 1999-08-03 2005-10-26 三菱電機株式会社 ストリップライン給電装置
JP2001308547A (ja) * 2000-04-27 2001-11-02 Sharp Corp 高周波多層回路基板
US6847066B2 (en) * 2000-08-11 2005-01-25 Oki Electric Industry Co., Ltd. Semiconductor device
JP3583706B2 (ja) * 2000-09-28 2004-11-04 株式会社東芝 高周波信号伝送用回路基板、その製造方法及びそれを用いた電子機器
JP2002124593A (ja) 2000-10-16 2002-04-26 Matsushita Electric Ind Co Ltd 半導体装置
JP3939504B2 (ja) 2001-04-17 2007-07-04 カシオ計算機株式会社 半導体装置並びにその製造方法および実装構造
JP4248761B2 (ja) * 2001-04-27 2009-04-02 新光電気工業株式会社 半導体パッケージ及びその製造方法並びに半導体装置

Also Published As

Publication number Publication date
TW200419651A (en) 2004-10-01
WO2004047169A1 (en) 2004-06-03
US20040239439A1 (en) 2004-12-02
CN1685502A (zh) 2005-10-19
TWI235416B (en) 2005-07-01
AU2003279577A1 (en) 2004-06-15
US7012490B2 (en) 2006-03-14
CN1685502B (zh) 2010-07-21
EP1454356A1 (en) 2004-09-08
KR20040081141A (ko) 2004-09-20

Similar Documents

Publication Publication Date Title
US7521796B2 (en) Method of making the semiconductor device, circuit board, and electronic instrument
KR100690545B1 (ko) 반도체 장치
KR101074529B1 (ko) 고주파수 애플리케이션에 대한 관통 접속부를 포함하는다층 인쇄 회로 기판
US6479758B1 (en) Wiring board, semiconductor package and semiconductor device
US7755205B2 (en) Electronic component, semiconductor device, methods of manufacturing the same, circuit board, and electronic instrument
US7262513B2 (en) Apparatus and method extending flip-chip pad structures for wirebonding on low-k dielectric silicon
US7564121B2 (en) Semiconductor device having shield structure
US20060049507A1 (en) Semiconductor device and wire bonding chip size package therefor
US8723337B2 (en) Structure for high-speed signal integrity in semiconductor package with single-metal-layer substrate
US20030205808A1 (en) Semiconductor device
JP6643714B2 (ja) 電子装置及び電子機器
US5764119A (en) Wiring board for high-frequency signals and semiconductor module for high-frequency signals using the wiring board
KR100651038B1 (ko) 고주파신호 전송구조
KR20190125887A (ko) 반도체 다이와 이격된 브리지 다이를 포함하는 반도체 패키지
JP2007134359A (ja) 半導体装置およびその製造方法
KR20030075384A (ko) 칩 패키지 및 그 제조방법
US20050023666A1 (en) Semiconductor device and method of fabricating the same, circuit board, and electronic instrument
JP4089402B2 (ja) 半導体装置
US7696615B2 (en) Semiconductor device having pillar-shaped terminal
JP4134694B2 (ja) 高周波信号用回路基板
CN118016638B (zh) 一种适用于晶圆级封装的低损耗宽带过渡结构
US20220375885A1 (en) Flip-chip ball grid array-type integrated circuit package for very high frequency operation
JP2008227518A (ja) 高周波信号用回路基板
TW200527616A (en) Stacked type semiconductor encapsulation device having protection mask
KR20210143999A (ko) 인쇄회로기판 및 이의 제조 방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121031

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20131031

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee