CN1628032A - 具有预定微电子机械***高度的喷墨打印头芯片 - Google Patents
具有预定微电子机械***高度的喷墨打印头芯片 Download PDFInfo
- Publication number
- CN1628032A CN1628032A CNA028291492A CN02829149A CN1628032A CN 1628032 A CN1628032 A CN 1628032A CN A028291492 A CNA028291492 A CN A028291492A CN 02829149 A CN02829149 A CN 02829149A CN 1628032 A CN1628032 A CN 1628032A
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- Prior art keywords
- drive circuit
- layer
- circuit layer
- microns
- movable member
- Prior art date
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Abstract
一种包括一个晶片衬片(12)的喷墨打印头芯片。一个CMOS驱动电路层置于晶片衬片上。多个喷嘴装置置于晶片衬片和CMOS驱动电路层上。每个喷嘴装置包括喷嘴腔壁和一个顶壁,所述喷嘴腔壁和顶壁确定一个喷嘴腔和一个确定于所述顶壁中的喷墨口(35)。一个微电子机械致动器(14)连接到CMOS驱动电路层。所述致动器具有至少一个可移动构件(14),所述可移动构件定位为在从驱动电路层接收到一个信号时作用于喷嘴腔中的墨而使得喷墨口喷墨。所述可移动构件与CMOS驱动电路层间隔2微米至15微米。
Description
技术领域
本发明涉及喷墨打印,特别是,本发明涉及具有预定微电子机械***高度的喷墨头芯片。
技术背景
在已经发明的许多不同类型的打印中,有许多现在还在使用。已知形式的打印机可以通过各种方法用相关的记录介质在打印介质上留下痕迹。常用的打印形式包括偏移打印、激光打印和复印装置、点阵型击打式打印机、热敏纸打印机、微缩胶片记录器、热腊打印机、染料升华打印机和喷墨打印机,后两者都是按需滴入且连续流动类型的。在考虑价格、质量、可靠性、结构简单性和操作等等时,每个类型的打印机都有其自身的优点和缺点。
近年来,主要由于其价廉和通用的性质,喷墨打印机领域,其中每个单个墨的像点来源于一个或者多个喷墨嘴,越来越受欢迎。
已经发明了许多不同的喷墨打印机技术。对于此领域的统计调查可以参见J Moore的文章,“Non-impact Printing:Introduction andHistorical Perspective”Output Hard Copy Devices,编辑为R Dubeck和S Sherr,207-220页(1988)。
喷墨打印机本身有许多不同的类型。在喷墨打印中采用连续流看起来可以至少追溯到1929年,其中,在Hansell发表的美国专利1941001号中公开了一种简单形式的连续流静电喷墨打印机。
Sweet发表的美国专利3596275也公开了一种连续流喷墨打印机工艺,其中包括了一利用高频静电场调制喷墨流因而引起墨滴分离的步骤。几个制造厂商,包括Elmjet和Scite公司(还可以参考Sweet等的美国专利3373437号),现在还在使用该技术。
压电喷墨打印机也是一种常用的喷墨打印机装置。压电***由Kyser等在美国专利3946398(1970)中公开,所述压电***采用一个隔膜式的操作,Zolten在美国专利3683212(1970)中公开了一种挤压式操作的压电晶体,Stemme在美国专利3747120(1972)中公开了一种弯曲式的压电操作,Howkins在美国专利4459601中公开了一种压电推压式的喷墨流致动,而Fischbeck在美国专利4584950中公开了一种剪切式类型的压电换能器元件。
近来,热喷墨打印成为了一种极受欢迎的喷墨打印形式。这种喷墨打印技术包括由Endo等在GB2007162(1979)和Vaught等在美国专利44900728中公开的技术。以上提到的两个参考都公开了依赖于电热致动器的驱作的喷墨打印机技术,电热致动器的驱动导致在在一个狭窄的空间内,譬如一个喷嘴中,产生一个气泡,这从而引起通过一个连接到所述狭窄空间的孔隙向一个相关联的打印介质上喷墨。制造厂商譬如佳能和惠普生产利用电热致动器的打印装置。由以上所述可见,现有不同类型的打印技术。理想地,一种打印技术应当具有许多有利的特性。这包括廉价的结构和操作,高速操作,安全和连续的长期操作等等。在成本、速度、可靠性、电耗、结构简单性、操作、耐用和耗材领域,每种技术都可能具有各自的优点和缺点。
在美国专利申请USSN 09/112,767中公开有一种以微电子机械***(MEMS)装置为基础的打印技术。特别是公开了一种含有MEMS装置的打印装置。还公开了制造所述机械装置的方法。
MEMS装置的制造以集成电路制造技术为基础。非常一般地,在一个晶片衬片上沉积一个牺牲材料层。然后在该牺牲材料层上沉积一个功能层。在所述功能层上形成图案以形成一个MEMS部分。然后去掉牺牲层以释放MEMS部件。
本申请人发现MEMS芯片的形状非常重要。部件需要移动。因此,所述形状必须为部件的移动提供足够的间隔。这意味着,诸如喷嘴腔之类的零件必须足够深,以提供置于喷嘴腔中的致动器的功能性移动。
然而,问题与深的形状联系在一起。该问题显示于图A和图B中。在图A中显示了一个衬片1,该衬片带有一个置于其上的牺牲材料层2。
一个问题立即显露出来。在腔4的侧壁2和底面3上均匀的沉积是极其困难的。沉积工艺的流体动力学是这个问题的主要原因。结果,腔4内部牺牲材料的一部分在侧壁2内逐渐变细。
牺牲材料的准确蚀刻依赖于在层2上的高度图像聚焦。可以看出,由于腔4的深度,这种聚焦可能在腔4中失去。这造成腔4内的劣质蚀刻。
使用一种分步骤蚀刻的蚀刻装置。这些步骤的深度通常是1微米。因此,每个分步的工艺会一次去除1微米的牺牲材料。如从图B可以看出,一旦去除去了层2的一个要求部分,会在腔4中留下一个部分。这称为脉道(stringer)5。可以看出,脉道5难于去除,因此它是一个不希望的结果。
本申请人构思了本发明用来提供一种打印头芯片,所述打印头含有MEMS部件,MEMS部件与晶片衬片间隔开一个预定的距离,从而可以获得足够的喷墨。所述的预定距离使得芯片形状避免了上述的问题。
发明内容
根据本发明的第一个方面,提供一种喷墨打印头芯片,所述喷墨打印头芯片包括:
一个晶片衬片,
一个置于晶片衬片上CMOS驱动电路层,和
多个置于晶片衬片和CMOS驱动电路层上的喷嘴装置,每个喷嘴装置包括:
喷嘴腔壁和顶壁,所述喷嘴腔壁和顶壁确定了一个喷嘴腔和一个所述顶壁中的喷墨口;以及
一个微电子机械致动器,所述致动器连接到所述CMOS驱动电路层,并且具有至少一个可移动构件,所述可移动构件的布置使得在从驱动电路层接收到一个信号时,作用在喷嘴腔中的墨上使得墨从喷墨口喷出,所述可移动构件,或者每个可移动构件与所述CMOS驱动电路层的间隔在2微米至15微米之间。
每个喷嘴装置的至少一个可移动构件可以与所述CMOS驱动电路层间隔5微米至12微米。特别是,每个喷嘴装置的至少一个可移动构件可以与所述CMOS驱动电路层间隔6微米至10微米。
每个喷嘴装置的喷嘴腔壁和顶壁可以设计成这样,使得喷嘴腔在一个平面和横截面上大体呈矩形。每个可移动构件可以是平面的和矩形的,跨越相应喷嘴腔的长度。可移动构件的一个自由端可以布置在CMOS驱动电路层与喷墨口之间。可移动构件相对的一端可以锚着在CMOS驱动电路层上。可移动构件可以包括一个加热电路,该加热电路导电地连接到所述的CMOS驱动电路层。设计可移动构件使得当从CMOS驱动电路层接收一个信号时,作为不均匀膨胀的结果,可移动构件向喷墨口移动,并且当信号终止时,作为不均匀收缩的结果,可移动构件从喷墨口移开。
取而代之,可移动构件可以包括一个由导电材料构成的致动臂,所述致动臂确定一个加热电路,所述加热电路连接到所述CMOS驱动电路层,并且它的构造使得当从CMOS驱动电路层接收一个信号时,作为不均匀膨胀的结果,致动臂向晶片衬片偏转。喷嘴腔的顶壁和喷嘴腔壁的至少一部分可以连接到所述致动臂上,从而,当向致动臂向晶片衬片偏转时,墨从顶壁中的喷墨口喷出。
本发明延伸到一种喷墨打印头芯片,它包括多个如上所述喷墨打印头芯片。
根据本发明的第二个方面,提供一种制造一种喷墨打印头芯片的方法,所述喷墨打印头芯片具有:一个晶片衬片;一个置于晶片衬片上CMOS驱动电路层,和置于晶片衬片和CMOS驱动电路层上的多个喷嘴装置,每个喷嘴装置包括喷嘴腔壁和一个顶壁,所述喷嘴腔壁和顶壁确定一个喷嘴腔和一个所述顶壁中的喷墨口以及一个微电子机械致动器,所述微电机致动器连接到所述CMOS驱动电路层,并且具有至少一个可移动构件,布置所述可移动构件使得它在从驱动电路层接收到一个信号时,作用在喷嘴腔中的墨上使得墨从喷墨口喷出,所述方法包括步骤:
在CMOS驱动电路层上沉积一个2微米至15微米的第一牺牲材料层,以便为一个致动器材料层确定沉积区域,
在所述沉积区域上沉积所述的致动器材料层,
蚀刻致动器材料层,以形成每个微电子机械致动器的至少一部分,以及
通过至少一个沉积和一个蚀刻工艺形成喷嘴腔壁和顶壁。
所述方法可以包括在CMOS驱动电路层上沉积一个2微米至15微米的第一牺牲材料层的步骤。特别是,所述方法可以包括在CMOS驱动电路层上沉积一个6微米至10微米的第一牺牲材料层的步骤。
形成每个喷嘴装置的喷嘴腔壁以及顶壁的步骤,该步骤可以包括:
在致动器材料层上沉积第二牺牲材料层,以便为至少一部分的所述喷嘴腔壁和顶壁确定一个沉积区,
在所述沉积区域上沉积一种结构材料。
蚀刻结构材料,以形成至少一部分的所述喷嘴腔壁和顶壁。
附图说明
下面将参照附图,仅以举例的方式说明本发明的优选实施方式,尽管还有其它可能落入本发明范畴内的实施方式,其中:
图A是一个示意图,显示了与打印头芯片中的深陷地形相关联的问题,如本发明的背景技术中所述。
图B是一个示意图,显示了与打印头芯片中的深陷地形相关联的问题,如本发明的背景技术中所述。
图1至3是本发明打印头芯片喷嘴装置优选实施方式的基本操作。
图4是本发明打印头芯片喷嘴装置一个实施方式的剖视图。
图5是图4所示喷墨嘴装置的分解透视图。
图6-15是本发明打印头芯片的剖面图,显示了一个依照本发明方法的打印头芯片的相继制造步骤。
图16是本发明打印头芯片的顶视图。
图17是参照图18至29描述的发明方法中所使用材料的材料符号表。
图18至图29是制造步骤的剖面图,这些步骤用于制造本发明具有喷嘴装置喷墨打印头的一种构形。
图30是根据本发明另一实施方式的一种喷墨打印头喷嘴装置的三维示意图。
图31至33是操作图30中喷嘴装置的三维示意图。
图34是根据本发明的另一种喷墨打印头芯片的三维示意图。
图35是图34中打印头芯片的局部放大图。
图36是带有喷嘴护板的打印头芯片的三维图示。
图37a至37r是喷墨打印头芯片喷嘴装置制造步骤的三维图示。
图38a至38r是图37a至37r中制造步骤的侧视剖面图。
图39a至39k是在制造工序各个步骤中使用的掩模的平面图。
图40a至40c是操作根据图37和38的方法制造的喷嘴装置的三维图示。
图41a至41c是操作根据图37和38的方法制造的喷嘴装置的侧视剖视图。
具体实施方式
本发明的优选实施方式中,提出了一种按需滴墨的喷嘴装置,该装置通过热致动器来提供按需喷墨,热致动器工作使得墨从喷嘴腔喷出。。所述喷嘴腔直接形成于供墨槽路上方,从而形成一个非常紧凑的喷嘴装置。所述非常紧凑的喷嘴装置使得打印装置占据的区域最小,从而提高制造的经济效果。
首先参照图1至图3,说明喷嘴装置一个优选实施方式的操作。图1是两个喷嘴装置10、11的剖视图,所述喷嘴装置形成在一个硅晶片12上,所述硅晶片包括一系列贯穿晶片的供墨槽路13。
位于部分硅晶片12和供墨槽路13上方的是一个热致动器14,启动热致动器使得墨从相应的喷嘴腔喷出。致动器14直接地放置在供墨槽路13的上方。在静止位置,墨灌充喷嘴腔,并且跨喷嘴腔的喷墨口35形成一个弯液面15。
致动器14位于晶片12的上方间,与晶片隔开6微米至10微米。
当希望从喷嘴腔喷射一个墨滴时,通过电流流经致动器14来启动热致动器14。该启动引起致动器14快速向上弯曲,如图2中所示。致动器14的运动导致腔喷射口35(图4)附近墨压的上升,反过来,这引起弯液面15的显著凸起以及墨的流出喷嘴腔。可以设计致动器14使得对墨提供足够的动量以引起直接喷射一个墨滴。
如图3中所示,可以设定致动器14启动的时间,从而在预定点切断致动电流。这引起致动器14返回其起始位置,从而引起一个沿箭头17方向流回腔内的墨流。墨体18颈缩并且分离,然后继续朝向输出介质,譬如纸,以进行打印。然后致动器14返回其静态位置,并且因为弯液面15上表面张力作用的结果,表面张力引起墨经供墨槽路13再次充填喷墨嘴腔。随后,墨回到如图1所述的状态。
在图4和图5中更加详细地说明了单个喷嘴装置10的结构。图4是一个局部剖视图,而图5是一个相应的分解透视图。
利用标准的半导体工艺技术加上微机加工和微制造工艺技术,在一个选定的晶片基底12上一次形成多个喷墨嘴,在本说明书中进一步详细说明了这种制造形式。
在晶片12上形成一个CMOS驱动电路层20。根据标准技术,所述CMOS层20可以包括夹在氧化层之间的多层金属层,并且优选地至少使用一个二级金属处理。为了减少必需的加工步骤,使用的掩模包括用于构成铝屏障21的区域,所述铝屏障21由第一铝层22和第二铝层23组成。另外,设置一铝的部分24,该部分确定了与后续加热器层的电接触4。在构造喷嘴装置10时使用了牺牲蚀刻剂且可蚀刻材料优选地是玻璃层时,铝屏障21的作用是重要的,其对在CMOS层20内可能随之发生的氧化物蚀刻提供了有效屏障。
在CMOS层20上形成一个氮化物钝化层26,以保护下方的CMOS层不受牺牲蚀刻剂和墨的腐蚀。在氮化层26的上方形成一个间隙28,在工作过程中于所述间隙18中形成一个气泡。间隔28可以通过设置一个牺牲层并接着蚀刻间隙28形成,这将在下文阐述。所述空气间隙28的厚度在6微米至10微米之间。
在空气间隙的28的顶部构造一个聚四氟乙烯(PTFE)层29,所述聚四氟乙烯(PTFE)层29包括一个夹在两个聚四氟乙烯层之间的金的蛇形加热层30。所述金加热层30造成蛇形以让它能够在加热时膨胀。加热层30和PTFE层29一起组成图1中的热致动器14。
外部的聚四氟乙烯层29具有极高的热膨胀系数(约为770×10-6,或者是硅的热膨胀系数的380倍左右)。聚四氟乙烯层29还通常是高度厌水的,这导致在致动器下方在间隙28中由于空气外排形成一个气泡。除了供墨槽路13周围的区域以外,还对聚四氟乙烯层29的顶面加以处理以使其厌水。这可以通过在氨气环境中用等离子蚀刻达到。还在聚四氟乙烯层的下部内形成加热器层30。
加热器层30在端部处,例如31,连接到含有驱动电路(未示)的CMOS驱动层下部。为了操作致动器14,电流流经金加热器元件30以加热致动器14的底表面。与空气泡接触的致动器14的底表面保持受加热,同时,由于致动器14的顶表面暴露于腔32中的墨中,任何顶表面的加热都被带走了。因此,聚四氟乙烯层的底层更快地膨胀,导致致动器14总体上快速地向上弯曲(如图2中所示),从而引起墨从喷墨口35喷出。
切断加热层的电流可以停止致动器14。这导致致动器14返回其静止位置。
在致动器14的顶部形成氮化物侧壁部分33和顶壁34。所述侧壁部分33和顶壁34可利用一个牺牲层经双波纹工艺形成。蚀刻顶壁部分34以确定喷墨口35,同时,形成一系列蚀刻孔36,所述蚀刻孔36具有相对小的直径,并且在使用牺牲蚀刻剂时能够有效地蚀刻较低的牺牲层。所述蚀刻孔36做得足够小,因此,表面张力限制墨经所述蚀刻孔36而不是喷墨口35从腔32中喷出的可能性。
图6至15解释了制造喷墨嘴装置阵列所涉及的各个步骤。
1.首先参照图6,起始状态包括一个硅晶片12,该硅晶片包括一个CMOS层20,所述的CMOS层具有氮化物钝化层26并且其表面用化学-机械的平面化工艺抛光。
2.如图7中所示对氮化物层做掩模以及蚀刻,从而确定喷嘴装置部分以及用于连接任何相继的加热器层与较低CMOS层的区域。
3.接着,如图8所示,沉积、掩模以及蚀刻牺牲氧化物层,在相继加热层与较低层导电接触的区域内蚀刻该氧化物层。
4.如图9a中所示,沉积一个1微米的聚四氟乙烯层并且首先对加热器与较低CMOS层之间的连接做掩模和蚀刻,然后对加热器的形状做掩模和蚀刻。
5.接着,如图10中所示,沉积金加热层30、31。由于难于蚀刻金的事实,该层可以保形地沉积并且接着利用化学机械平面化部分地除去,从而留下与加热器元件相关联的部分。加工步骤4和5基本上包含一个双波纹化工艺。
6.接着,沉积、掩模和蚀刻一顶部聚四氟乙烯层,蚀刻聚四氟乙烯层直至牺牲层以确定加热器的形状,如图11所示。接着,等离子加工聚四氟乙烯层的表面以使之厌水。适当的工艺可以排除在氨气环境中的等离子损伤。另外,所述表面也可以涂覆厌水材料。
7.然后,如图12所示,沉积并且蚀刻另一个牺牲层,从而形成喷嘴腔的结构。然后对所述牺牲层做掩模并且蚀刻,以确定一个喷嘴腔壁的沉积区域。
8.如图13中所示,通过保形地沉积三微米的氮化物,并且蚀刻喷嘴框缘直至一微米的深度处(该蚀刻深度对时间的要求并不是极其高的),以形成喷嘴腔。接着,用一个掩模来蚀刻喷墨口35以及牺牲层的蚀刻孔36。
9.如图14所示,对晶片的背侧为墨槽路做掩模并且等离子蚀刻直至贯穿晶片。合适的等离子蚀刻工艺可以包括一种深度非均匀沟道蚀刻***,由例如SDS System提供(参阅由J.K Bhardwaj、H.Ashraf编辑的“Advanced Silicon Etching Using High Density Plasme”,SPIEProceedings in Micro Maching and Micro Fabrication ProcessTechnology2639卷224页)。
10.如图15所示,使用氢氯酸之类的牺牲蚀刻剂蚀刻掉牺牲层。接着,穿过晶片的背侧等离子处理围绕墨槽路的致动器下方部分,以使面板端亲水。
接着,可以把晶片分成分离的打印头,每个打印头粘合到一个注射成形的供墨槽路中,并且把电信号通过带自动接合(TAB)到打印头以进行随后的检测。图16显示了构造于晶片上以提供彩色页宽输出的喷嘴装置的顶视图。
可以用以下步骤来进行详细的制造工艺,此工艺可用于制造整体的喷墨打印头,该打印头按本实施例规定的原则工作:
1.使用一种双面抛光的晶片20,利用0.5微米、单晶、双金属CMOS工艺完成驱动晶体管、数据分布和时钟电路。图18显示了这些步骤。为了表达清楚,这些图示可能不是按比例的,并且可能不代表通过喷嘴的任一平面的横截面。图17表示了这些制造图示以及那些交叉参引喷墨结构中的各种材料。
2.沉积1微米的低应力氮化物。这起到防止墨经芯片表面二氧化硅扩散的作用。
3.沉积3微米的牺牲材料(例如聚酰亚胺)。
4.使用掩模1蚀刻牺牲层。此掩模确定了致动器的锚着点。此步骤显示于图19中。
5.沉积0.5微米的聚四氟乙烯。
6.使用掩模2把聚四氟乙烯、氮化物、和CMOS钝化物向下蚀刻到第二层金属。此掩模确定了加热器镀通孔。此步骤显示于图20中。
7.用掩模3沉积并且构图阻蚀剂。此掩模了确定加热器。
8.沉积0.5微米的金(或者其它有低杨氏模量的加热材料)并且剥去阻蚀剂。步骤7和8形成一个提离工艺。此步骤示于图21中。
9.沉积1.5微米的聚四氟乙烯。
10.使用掩模4向下蚀刻聚四氟乙烯至牺牲层。该掩模确定了加热器和连接垫。此步骤显示于图22中。
11.晶片检测。在此时完成了所有电连接,而芯片还没有被分开。
12.等离子处理聚四氟乙烯使得致动器的顶壁和侧壁亲水。这使得喷嘴腔可以通过毛细作用充墨。
13.沉积10微米的牺牲材料。
14.使用掩模5向下蚀刻牺牲层直至氮化物。该掩模确定了喷嘴腔。此步骤显示于图23中。
15.沉积3微米的PECVD玻璃。此步骤显示于图24中。
16.使用掩模6蚀刻至1微米的深度。该掩模确定了喷墨口的框缘。此步骤显示于图25中。
17.使用掩模7向下蚀刻至牺牲层。该掩模确定了喷墨口以及牺牲蚀刻剂通孔。此步骤显示于图26中。
18.使用掩模8反向蚀刻穿透硅晶片(例如,用一种SurfaceTechnology System提供的ASE高效硅蚀刻器)。此掩模确定了蚀刻穿透晶片的墨输入口。晶片也通过此蚀割被切开。此步骤显示于图27中。
19.反向蚀刻CMOS氧化层,然后用反向蚀刻的硅作掩模,沉积氮化层以及牺牲层直至聚四氟乙烯。
20.经反向蚀刻孔等离子处理聚四氟乙烯,使得致动器的顶部表面亲水。这使得能够通过毛细作用给喷嘴腔充墨,但是保留了致动器下方的厌水表面。当以水为基础的墨充满喷嘴时,这个厌水部分使得气泡陷落在致动器的下面。此气泡起两个作用:通过减少从聚四氟乙烯加热的一侧传导走热量来提高加热器效率,以及减少致动器背部的负压。
21.蚀刻牺牲材料。清理喷嘴装置,解除致动器上的约束,并且通过此蚀刻分离芯片。此步骤显示于图28中。
22.把打印头安装进其封装中,所述封装可以是模制塑料泡沫,该模制塑料泡沫含有向处于晶片背面的墨输入口提供适当颜色的墨供墨槽。
23.把打印头连接到其互连***。为了使连接不引人注目且气流混乱最小,可以使用TAB。如果打印机操作时与纸之间有足够的间距,也可以使用电线连接。
24.对打印头的前表面进行厌水化处理。
25.用墨填充整个打印头并且检测它们。图29显示了一个填满了墨的喷嘴。
在图30中,总体上用标号110指代本发明打印头芯片另一个实施方式的喷嘴装置。打印头具有多个在硅衬片116上布置成阵列114的喷嘴装置110(图34和35)。下面详细地描述阵列114。
喷嘴装置110包括一个硅衬片或者说晶片116,其上沉积一个介电层118。一个CMOS钝化层120沉积在介电层118上。
每个喷嘴装置110包括一个确定一个喷墨口124的喷嘴122、一个杠杆臂126形式的连接构件、和一个致动器128。杠杆臂126把致动器128连接到喷嘴122。
如在图31至33中详细所示的,喷嘴122包含一个冠部130,所述冠部带有悬于该冠部130的裙部132。所述裙部132形成喷嘴腔134的周壁的一部分(图31至33)。喷墨口124与喷墨嘴腔134流体连通。应当注意喷墨口124由一个***框136包绕,此***框“别住(pin)”喷墨嘴腔134中墨体140的弯液面138(图31)。
一裙部132位于CMOS钝化层120上方6微米至10微米之间。
墨输入口孔隙142(图35中所示最清楚)位于喷墨嘴腔134的底面146中。孔隙142与穿过衬片116确定的墨输入槽148流体连通。
一个壁部150以孔隙142为边界并且从底部146向上延伸。如以上所述,喷嘴122的裙部132确定喷墨嘴腔134的周壁的一个部分,壁部150确定喷墨嘴腔134的周壁的第二部分。
壁150在其游离端具有向内指的唇部152,该唇部作为流体封口用于防止喷嘴122移动时墨的逸出,如下详细说明中所述。可以看出,由于墨140的粘性以及唇部152与裙部132之的小间隔尺度,向内指的唇部152以及表面张力起到防止墨从喷墨腔134逸出的封口作用。
致动器128是一种热弯致动器并且连接到一个从衬片116向上伸-或者更加具体地说从CMOS钝化层120向上伸的锚着件154上。锚着器154安装在与致动器128形成电气连接的导电垫156上。
致动器128包含第一主动梁158,所述第一主动梁158安放在第二被动梁160上方。在一个优选的实施方式中,两个梁158和160都是,或者包括一种导电陶瓷材料,譬如氮化钛(TiN)。
两个梁158和160都具有锚着在锚着件154上的第一端部,其相对的一端连接到臂126。当引起一个电流流经主动梁158时,梁158产生热膨胀。至于被动梁160,没有电流流过它,不以相同的速度膨胀;产生一个弯曲力矩,引起臂126从而引起喷嘴122向下往衬片116方向位移,如图32所示。这引起经喷嘴口124喷墨,如在图32中的162处所示。从主动梁158撤走热源,也就是说停止电流时,喷嘴122返回其静态的位置,如图33中所示。
当喷嘴122返回其静态位置时,由于一个小墨滴颈部断裂结果形成一个小墨滴,如图33中的166处所示。然后该墨小滴164转移到打印介质,譬如一张纸上。作为形成小墨滴164的结果,形成一个“负的”弯液面,如图33中的168处所示。该“负的”弯液面168导致墨流140进入喷墨嘴腔134中,从而形成一个新的弯液面138(图31)以准备下一次从喷嘴装置110喷出墨滴。
现在参考图34和图35详细地说明喷嘴阵列144。该阵列144用于一个四色打印头。因此,阵列114包括四个喷嘴装置组170,每组对应一种颜色。每个组170具有排成两排172和174的喷嘴装置110。在图35中更详细地显示了一个组170。
为了方便地紧密组装排172和174中的喷嘴装置110,排174中的喷嘴装置110相对于排172中的喷嘴装置110偏移或者说错开。还有,排172中的喷嘴装置110相互间隔开足够远,使得排174中喷嘴装置110的杠杆臂126能够在排172喷嘴装置110的相邻喷嘴122之间通过。还要注意到每个喷嘴装置110基本上是做成哑铃形状的,从而使排172中的喷嘴122排列在排174相邻喷嘴装置110的喷嘴122与致动器128之间。
而且,为了方便地紧密排列排172和174中的喷嘴122,每个喷嘴122基本上做成六边形形状。领域内普通技术人员可以看出,使用中,当喷嘴122向衬片166移动时,由于喷嘴口124对喷墨嘴腔134稍成角度,墨稍微偏离垂直方向地喷出。图34和35中所示的装置的一个优点是排174和172中的喷嘴装置110的致动器128沿同一个方向伸到排174和172的一侧。因此从排172中的喷嘴122中喷出的墨滴和从排174中的喷嘴122中喷出的墨滴相互平行,从而提高了打印质量。
还有,如图34中所示,衬片16具有布置于其上的连接垫176,所述连接垫经垫156对喷嘴装置110的致动器128提供电连接。这些电连接经CMOS层(未示)形成。
参见图36,图中显示出本发明的一个发展。参考以前的各图,除非另有说明,相同的标号指代相同的部分。
在此发展中,一个喷嘴护板180安装在阵列114的衬片116上。喷嘴护板180包括一个体部构件182,多个通道184通过此构件。通道184与阵列114的喷嘴装置110的喷嘴口124对齐,从而,当从喷嘴口124之一喷墨时,在落射打印介质之前,墨通过相关通道184。
通过臂或者说支柱186,体部构件182相对于喷嘴装置110间隔地安装。支柱186之一具有位于其中的空气入口188。
在使用中,当操作阵列114时,经入口孔188充以空气,空气被迫与墨一起穿过通道184。
由于空气以与小墨滴164不同的速度充入通道184,墨并不夹带于空气中。例如,以约3m/s的速度从喷嘴122喷出墨滴164。空气以约1m/s的速度经经过通道184。
空气的用途是使得通道184不存在异物颗粒。存在这样的危险,诸如尘土之类的异物颗粒会落在喷嘴装置110上,从而对操作造成不利的影响。在喷嘴护板180中设置空气入口88,在较大的程度上避免了此问题。
喷嘴装置110构造为使得打印头芯片具有相对平坦的形状。这通过每个喷嘴装置的裙部132距墨钝化层120为6微米至10微米之间的事实被强调。在上文的本发明背景技术部分中描述了与具有较深形状相关联的问题。因此,喷嘴装置110的结构的一个特别的优点是处理了这些问题。
下面参见图37至39,说明制造喷嘴安排110的一种工艺。
从硅衬片或者说晶片116开始,在晶片116的一个表面上沉积一个介电层118,所述介电层118的形式是约为1.5微米的CVD氧化物。在层118上旋涂阻蚀剂,并且把层118暴露于掩模200并且接着显影。
在显影以后,把层118向下等离子蚀刻到硅层116。然后剥去阻蚀剂并且清洁层118。此步骤确定了墨入口孔隙142。
在图37b中,在层118上沉积约0.8微米的铝202。旋涂阻蚀剂,并且把铝202暴露于掩模204并且接着显影。把铝202向下等离子蚀刻到氧化物层118,剥去阻蚀剂并且清洁所述装置。此步骤提供了连接垫和对喷墨致动器128的相互连接。此相互连接是对于一个NMOS驱动晶体管和一个带有CMOS层(未示)内连接线路的电源层的。
沉积约0.5微米的PECVD氮化物作为CMOS钝化层120。旋涂阻蚀剂并且把层120暴露于掩模206然后把它显影。显影后把氮化物向下等离子蚀刻到铝层202以及入口孔隙142区域中的硅层116。剥去阻蚀剂并且清洁所述装置。
在层120上旋涂牺牲材料层208。材料208是6微米的光敏聚酰亚胺或者约4微米的高温阻蚀剂。软烘烤层208并且把它暴露于掩模210,此后把它显影。然后,当层208包含聚酰亚胺时把它在400℃下硬烘烤一个小时,或者,在层208是高温阻蚀剂的情况下,在高于300℃的温度下硬烘烤。应当注意在附图中,在掩模210的设计中考虑了由于绉缩引起聚酰亚胺层208的图样依从性畸变。
下一个步骤中,如图37e所示,镀一个第二牺牲层212。层212或者是一个旋涂的2微米光敏聚酰亚胺,或者是约1.3微米的高温阻蚀剂。把层212软烘烤并且暴露于掩模214。在暴露于掩模214后把层212显影。在层212是聚酰亚胺的情况下,把层212在400℃下硬烘烤约一个小时。层212是阻蚀剂时,在高于300℃的温度下硬烘烤约一个小时。
然后沉积一个0.2微米的多层金属层216。此层216的部分形成致动器128的被动梁160。
应该注意在这个时期,介于5.3微米与8微米之间的牺牲材料形成了致动器128被动梁160的沉积区域。
层216通过在300℃喷涂1000埃氮化钛(TiN)接着喷涂50埃氮化钽(TaN)形成。再喷涂上1000埃的氮化钛,接着喷涂50埃的氮化钽,再次喷涂1000埃的氮化钛。
可以用于代替TiN的其它材料有TiB2、MoSi2或者(Ti,Al)N。
然后把层216暴露于掩模218,显影并且向下等离子蚀刻到层212,此后湿剥层216的阻蚀剂,小心不要去掉硬化了的层208或者212。
通过旋涂上4微米光敏聚酰亚胺或者是约2.6微米的高温阻蚀剂形成第三牺牲层220。软烘烤层220,此后把它暴露于掩模222。然后把暴露了的层220显影,接着硬烘烤。在层220是聚酰亚胺的情况下,把层220在400℃下硬烘烤约一个小时,或者在层212是阻蚀剂时在高于300℃的温度下硬烘烤。
然后向层220上镀第二多层金属层224。层224的构成与层216相同并且施以相同的方式。可以看出,两个层216和224都是导电的。
把层224暴露于掩模226并且然后显影。把层224向下等离子蚀刻到聚酰亚胺或者高温阻蚀剂层220,此后湿剥镀了阻蚀剂层224,小心不要去掉硬化了的层208、212或者220。可以注意到,层224的余留部分确定了致动器128的主动梁158。
通过旋涂4微米的光敏聚酰亚胺或者是约2.6微米的高温阻蚀剂形成第四牺牲层228。把层228软烘烤、暴露于掩模230,然后显影,以留下图9k中所示的小岛部分。把层228的余留部分硬烘烤,在聚酰亚胺的情况下于400℃下硬烘烤约一个小时,为阻蚀剂时在高于300℃的温度下硬烘烤。
如图371中所示,沉积一个高杨氏模量的介电层232。层232由约1微米的氮化硅或者氧化铝组成。层232在低于牺牲层208、212、220、228硬烘烤温度的温度下沉积。对于该介电层232,所要求的主要特性是高弹性模量、化学惰性以及对TiN良好的粘附性。
通过旋涂2微米光敏聚酰亚胺或者是约1.3微米的高温阻蚀剂形成第五牺牲层234。把层234软烘烤,暴露于掩模236并且显影。把层228的余留部分硬烘烤,在聚酰亚胺的情况下于400℃下硬烘烤约一个小时,为阻蚀剂时在高于300℃的温度下硬烘烤。
把介电层232向下等离子蚀刻到牺牲层228,小心不要去掉任何牺牲层234。
该步骤确定了喷嘴装置110的喷墨口124、杠杆臂126和锚着件154。
沉积一个高杨氏模量的介电层238。在低于牺牲层208、212、220和228的硬烘烤温度的温度下,通过沉积约0.2微米氮化硅或者氮化铝形成所述层238。
然后,如图37p中所示,把层238各向异性地向下等离子蚀刻到一个0.35微米的深度。此蚀刻旨在清除整个表面的介电质,除了介电层232以及牺牲层234的侧壁。该步骤产生了围绕喷嘴口124的喷嘴框136,如前所述,此喷嘴框“别住(pin)”墨的弯液面。
形成一个紫外线(UV)松解带240。在硅晶片116上旋涂0.4微米的阻蚀剂。把晶片暴露于掩模242,反向蚀刻晶片116以确定墨输入槽148。然后从晶片116剥去阻蚀剂。
把另一个紫外线(UV)松解带(未示)施加到晶片16的后部并且去除带240。用氧等离子剥去牺牲层208、212、220、228和234,以提供如图37r和38r中所示的最终喷嘴装置110。为了便于参照,这两个图中的所示标号与图30中的标号相同,以指代喷嘴装置110的相关部分。图40和41显示了喷嘴装置110的操作,此喷嘴装置根据上面参照图37和38描述的工艺制造,并且这些图与图31至33对应。
领域内普通技术人员可以看出,可以对特定实施方式中所示的本发明进行改变和/或修改,而不偏离泛泛说明的本发明的精神和范畴。因此,这些实施例认为在所有方面都是示例性的而不是限制性的。
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Claims (10)
1.一种喷墨打印头芯片,其包括
一个晶片衬片,
一个置于该晶片衬片上的CMOS驱动电路层,和
多个置于所述晶片衬片和所述CMOS驱动电路层上的喷嘴装置,每个喷嘴装置包括
喷嘴腔壁和一个顶壁,所述喷嘴腔壁和顶壁确定一个喷嘴腔和一个确定于所述顶壁中的喷墨口,以及
一个微电子机械致动器,所述微电子机械致动器连接到所述CMOS驱动电路层,并且具有至少一个可移动构件,所述可移动构件定位为在从驱动电路层接收到一个信号时作用于喷嘴腔中的墨以从喷墨口喷墨,所述可移动构件或者各可移动构件与所述CMOS驱动电路层间隔2微米至15微米。
2.如权利要求1所述的喷墨打印头芯片,其中,各喷嘴装置的所述至少一个可移动构件与所述CMOS驱动电路层间隔5微米至12微米。
3.如权利要求2所述的喷墨打印头芯片,其中,各喷嘴装置的所述至少一个可移动构件与所述CMOS驱动电路层间隔6微米至10微米。
4.如权利要求1所述的喷墨打印头芯片,其中,各喷嘴装置的喷嘴腔壁和顶壁构造为所述喷嘴腔在平面和横截面上大体呈矩形,每个可移动构件是平坦的而且为矩形并跨越其相应喷嘴腔的长度,可移动构件的一个自由端布置在CMOS驱动电路层与喷墨口之间,而可移动构件的相对端锚着至CMOS驱动电路层,可移动构件包括一个与所述CMOS驱动电路层导电连接的加热电路,可移动构件构造为:当加热电路从CMOS驱动电路层接收到一个信号时,可移动构件由于不均匀膨胀而向喷墨口移动,而当信号终止时由于不均匀收缩而远离喷墨口移动。
5.如权利要求1所述的喷墨打印头芯片,其中,可移动构件包括一个由导电材料制成的致动臂,所述致动臂构造为确定一个连接到所述CMOS驱动电路层的加热电路,并且构造为当从CMOS驱动电路层接收到一个电信号时,致动臂由于不均匀膨胀而向晶片衬片偏转,并且喷嘴腔壁的至少一部分和喷嘴腔的顶壁连接到所述致动臂上,从而,当致动臂向晶片衬片偏转时,墨从确定在顶壁中的喷墨口喷出。
6.一种包括多个如权利要求1所述的打印头芯片的喷墨打印头。
7.一种制造喷墨打印头芯片的方法,所述喷墨打印头芯片具有:一个晶片衬片、一个置于晶片衬片上的CMOS驱动电路层、和多个置于晶片衬片和CMOS驱动电路层上的喷嘴装置,每个喷嘴装置包括喷嘴腔壁、一个顶壁、以及一个连接到所述CMOS驱动电路层的微电子机械致动器,所述喷嘴腔壁和顶壁确定一个喷嘴腔和一个确定于所述顶壁中的喷墨口,所述微电子机械致动器具有至少一个可移动构件,所述可移动构件定位为在从驱动电路层接收到一个信号时作用于喷嘴腔中的墨使得从喷墨口喷墨,所述方法包含以下步骤:
在CMOS驱动电路层上沉积一个厚为2微米至15微米的第一牺牲材料,以便为致动器材料层确定沉积区域,
在所述沉积区域上沉积所述的致动器材料层,
蚀刻致动器材料层,以形成各微电子机械致动器的至少一部分,以及
通过沉积和蚀刻工艺中的至少之一形成喷嘴腔壁以及顶壁。
8.如权利要求7所述的方法,其中,所述沉积第一牺牲材料的步骤为在CMOS驱动电路层上沉积5微米至12微米的第一牺牲材料。
9.如权利要求8所述的方法,其中,所述沉积第一牺牲材料的步骤为在CMOS驱动电路层上沉积6微米至10微米的第一牺牲材料的步骤。
10.如权利要求7所述的方法,其中,形成各喷嘴装置喷嘴腔壁以及顶壁的步骤包括以下步骤:
在致动器材料层上沉积第二牺牲材料层以便为所述喷嘴腔壁的至少一部分以及所述顶壁确定一个沉积区域,在所述沉积区域上沉积一种结构材料,以及
蚀刻所述结构材料,以形成所述顶壁和所述喷嘴腔壁的至少一部分。
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2002
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- 2002-08-29 US US10/510,207 patent/US7303262B2/en not_active Expired - Fee Related
- 2002-08-29 WO PCT/AU2002/001163 patent/WO2004002745A1/en not_active Application Discontinuation
- 2002-08-29 AU AU2002328661A patent/AU2002328661B2/en not_active Ceased
- 2002-08-29 EP EP02764372A patent/EP1517794A4/en not_active Withdrawn
- 2002-08-29 CN CNB028291492A patent/CN1325264C/zh not_active Expired - Fee Related
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2003
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- 2003-10-28 US US10/693,948 patent/US6776476B2/en not_active Expired - Fee Related
- 2003-10-28 US US10/693,977 patent/US7067067B2/en not_active Expired - Fee Related
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2004
- 2004-07-02 US US10/882,766 patent/US6988788B2/en not_active Expired - Fee Related
- 2004-10-08 ZA ZA200408144A patent/ZA200408144B/en unknown
- 2004-10-28 IL IL164931A patent/IL164931A/en not_active IP Right Cessation
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- 2008-01-21 US US12/017,305 patent/US7568791B2/en not_active Expired - Fee Related
- 2008-08-22 US US12/196,284 patent/US7641315B2/en not_active Expired - Fee Related
- 2008-11-03 US US12/264,228 patent/US7922298B2/en not_active Expired - Fee Related
- 2008-11-26 US US12/324,639 patent/US7914118B2/en not_active Expired - Fee Related
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2009
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- 2009-11-30 US US12/627,761 patent/US7976129B2/en not_active Expired - Fee Related
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2011
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102300801B (zh) * | 2009-01-28 | 2016-02-03 | 富士胶卷迪马蒂克斯股份有限公司 | 接合式微机电组件 |
CN103370201A (zh) * | 2010-10-01 | 2013-10-23 | 赞木泰克有限公司 | 在喷嘴板上具有公共导电轨道的喷墨打印头 |
CN103370201B (zh) * | 2010-10-01 | 2015-07-15 | 赞木泰克有限公司 | 在喷嘴板上具有公共导电轨道的喷墨打印头 |
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