CN1596478A - 发光材料,可特别用于led用途 - Google Patents

发光材料,可特别用于led用途 Download PDF

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CN1596478A
CN1596478A CNA038016001A CN03801600A CN1596478A CN 1596478 A CN1596478 A CN 1596478A CN A038016001 A CNA038016001 A CN A038016001A CN 03801600 A CN03801600 A CN 03801600A CN 1596478 A CN1596478 A CN 1596478A
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A·C·A·德尔辛
H·T·辛岑
李元强
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Abstract

公开了由Eu掺杂的、一般组成为MSi2O2N2的氧氮化物主体晶格组成的紫外-蓝光激发的绿光发光材料,其中M是选自Ca、Sr、Ba的至少一种碱土金属。

Description

发光材料,可特别用于LED用途
技术领域
本发明涉及发光材料,其可在光谱区的紫外-蓝色部分受激发光,更具体而言,但不只限于,涉及光源用磷光体,特别是9用于发光二极管(LED)的磷光体。所述磷光体属于稀土活化的硅氧氮化物类。
背景技术
迄今为止,通过将发蓝光的二极管与发黄光的磷光体组合实现了白光LEDs。这种组合的色泽稳定性差,但是,可以通过采用红-绿-蓝体系(RGB)将其显著改进。这种体系采用例如红和蓝发射体,与发射绿光的铝酸盐磷光体如SrAl2O4:Eu或BaAl2O4:Eu组合起来,可能要向Eu中加入Mn,其发射最大值在约520nm处,参见US-A 6 278 135。然而,这些铝酸盐的激发和发射谱带的位置不是最佳的。必须用330-400nm的短波紫外线来激发它们。
另一方面,已知一些从MSiON类衍生而来的磷光体,参见例如VanKrevel的“On new rare-earth doped M-Si-Al-O-N materials”,TU Eindhoven 2000,ISBN 90-386-2711-4,Chapter 6。它们掺杂了Tb。在365nm或254nm激发实现了发射。
发明内容
本发明的一个目的是提供一种新型的发光材料。另一个目的是提供一种具有精细调制的发射绿光的磷光体,其可以由紫外/蓝色辐射高效率地激发。另一个目的是提供一种磷光体,其用于具有至少一个LED作为光源的照明装置中,该LED发出380-470nm的一级辐射,通过暴露于该LED的一级辐射的此类磷光体将该辐射部分或全部地转变为较长波长的辐射。另一个目的是提供一种照明装置,该装置发出白光,而且特别是具有高色泽稳定性。另一个目的是提供一种高效率的照明装置如LED装置,其在380-470nm内具有良好的吸收并且易于制造。
这些目的通过权利要求1和8表明的特征而分别获得了实现。在从属权利要求中提供了特别有优势的构型。
至少借助于源自Eu-或Eu、Mn-共活化的硅氧烷氧氮化物类材料实现了所述转变。更具体而言,通过用Eu离子掺杂MSi2O2N2(M=Ca,Sr,Ba)主体晶格产生了一种新型磷光体材料。得到的磷光体表现出高度的化学和热稳定性。
所有相关性能的更大范围的精细调制可以通过用(AlO)部分地替换(SiN)来实现,特定的百分比用x表示,最高为40%,得到了由MSi2-xAlxO2+xN2-x表示的通式组合物,优选范围是1-15%(x=0.01-0.15)。
对于可在蓝光辐射下被高效率地激发的绿光发射材料而言,金属M优选是Ca或至少主要是Ca,添加少量的Ba和/或Sr。氮的引入提高了共价键合的程度和配位场的***。结果是与氧化物晶格相比,这导致了激发和发射谱带向较长波长发生位移。得到的磷光体表现出高度的化学和热稳定性。
所有相关性能的更大范围的精细调制可以通过采用阳离子M来实现,通过组合几种所述的M金属并包含Zn作为部分阳离子M,优选高达5-40mol%的M,和/或用Ge至少部分替换Si来获得阳离子M。掺杂到阳离子M中的Eu的量为M的0.1-25%的部分替换,优选2-15%的M。此外,在假设Eu量给定的情况下,进一步掺杂Mn可以精细调制相关性能,优选为所述给定Eu掺杂量的至多50%。
由于这些材料有低能量激发谱带而能将紫外-蓝光辐射转变为绿光,可以将它们用于例如白光源(例如灯)中,特别是基于主要发蓝光的LEDs(一般是基于在约430-470nm发射的GaN或InGaN)与红光发射磷光体组合的光源。合用的红光发射磷光体是掺杂了Eu的氮化硅材料,如M2Si5N8(M=Ca,Sr,Ba),参见例如WO 01/40403。也可以应用于彩色光源。
附图简述
在下文中,参考多个示范性实施方案更详细地说明本发明。在附图中:
图1显示了一个半导体组件(LED),其用作白光光源,其含有铸模树脂(图1a)和不含有铸模树脂(图1b);
图2显示了具有本发明磷光体的照明装置;
图3-5显示了本发明磷光体的发射光谱和反射光谱。
具体实施方式
以举例的方式,描述了与用于WO 01/40403中的相似结构,该结构与InGaN晶片一起用于白光LED中。此类白光光源的结构具体地示于图1a中。该光源基于最大发射波长为400nm的InGaN型半导体组件(晶片1),具有第一和第二电连接2、3,其包埋在不透明基底罩8的凹穴9区域中。其中一个电连接3经由连接导线4与晶片1相连。凹穴具有一个用作晶片1的蓝光一级辐射反射器的壁7。凹穴9填充了电器内封胶5,其含有作为主要成分(优选至少80重量%)的聚硅氧烷铸模树脂(或环氧铸模树脂),还含有磷光体颜料6(优选少于15重量%)。还特别含有少量的甲基醚和高分散硅胶。磷光体颜料是发出蓝、绿和红光的三种颜料与本发明的绿色磷光体的混合物。
图1b显示了具有半导体组件10的光源的实施方案,其中,向白光的转化是通过直接施用在单独的晶片上的磷光体转化层16实现的。在基底11的顶部有接触层12、镜层13、LED晶片14、滤光片15和磷光体层16,该磷光体层受到LED的一级辐射的激发并将其转化为可见的长波辐射。该结构单元被塑料透镜17所包围。只显示了两个欧姆接触中的上部接触18。LED的一级紫外辐射在400nm附近,二级辐射由采用BaSi2O2N2:Eu的本发明第一磷光体(在500nm附近发射)来发射并由采用氮化物硅氧酸盐的第二磷光体(发射出橙红色光)来发射。
图2显示了照明装置20。其包含一个通用支持体21,一个立方体形的外罩22与其粘合。其顶部一侧装有通用盖板23。该立方体形外罩上有多个切槽,其中安放着单个的半导体组件24。它们是最大发射在450-470nm附近的发蓝光的发光二极管。向白光的转化借助于转化层25进行,转化层25安置在可接受到蓝光辐射的所有表面上。这包括所述外罩侧壁、盖板和支持体的内表面。转化层25由在红光光谱区域发射的磷光体、本发明的在绿光光谱区域发射的磷光体组成,与未被吸收的一级蓝光辐射混合在一起成为白光。
采用Eu2O3(纯度99.99%)、BaCO3(纯度>99.0%)、SrCO3(纯度>99.0%)、CaCO3(纯度>99.0%)、SiO2和Si3N4作为制造本发明新型磷光体的商购原料。通过行星式球磨机,在异丙醇中,将原料以适当的量均质地湿法混合4-5小时。混合后,将混合物在炉中干燥并在玛瑙研钵中研磨,接着在水平管式炉中,在还原性氮气/氢气气氛下,将粉末在钼坩锅中于1100-1400℃下煅烧。煅烧后用粉末X-光散射法(铜K-α线)测定材料。
在紫外-蓝光激发下,所有样品都显示出高效率发光效应,最大发射在蓝绿区域(M=Ba的情况下)、绿色区域(M=Ca)或黄绿区域(M=Sr)。发射和激发光谱的典型实例可见于图3(M=Ca)、图4(M=Sr)和图5(M=Ba)。对于CaSi2O2N2:Eu来说,获得了一种绿光发射磷光体(560nm有最大发射),其可以在光谱的蓝色部分(激发最大值在约440nm处)被高效率地激发。通过采用M=(Ba,Sr)的混合复合物并变化Ba和Sr的比例,发射可以在500nm-570nm内移动,激发谱带的顶部可以从400nm移至高达430nm。观测到的向较长波长的移动可归因于Eu 5d波段在较低能量下的重心和Eu 5d谱带较强的配位场***。通过用(AlO)至少部分地替换(例如高达15mol%)(SiN),可以实现另外的操作,得到优选结构MSi2-xO2+xAlxN2-x:Eu(例如x=0.15)。
由于这些材料有低能激发谱带而能将紫外-蓝光转化成绿光,可以将它们用于白光源,例如基于主要发射蓝光的LEDs(一般为GaN或InGaN)并结合红光发射磷光体的白光源。
通过引入Zn作为阳离子M的补充,优选不超过30%,并用Ge至少部分替换Si,优选不超过25%可以实现其它的精细调制。
表1
原料  级别
MCO3(M=Ca,Sr,Ba)  99.0%
SiO2  Aerosil OX50
γ-Al2O3  >99.995
Si3N4  β含量:23.3%,O~0.7%
Eu2CO3  99.99%
以下给出了合成方法。可能的原料示于表1中。
按照以下反应方程可以合成所有的氧氮化物磷光体:
其中(M=Ca、Sr、Ba)。例如y=0.1。
在水平管式炉中,在主要为N2辅以少量H2(10%)的还原性气氛下,将粉末混合物在Mo坩锅中于1100-1400℃煅烧几个小时。
随着原子半径由Ba减小至Ca,发现通过该反应用(AlO)+替换(SiN)+变得更为容易。
图3显示了CaSi2O2N2:Eu的典型发射/激发光谱。
图4显示了SrSi2O2N2:Eu的典型发射/激发光谱。
图5显示了BaSi2O2N2:Eu的典型发射/激发光谱。
在所有实施方案中,所掺杂的Eu为阳离子M的10%。
M=Ca时的最大发射在560nm附近,M=Sr时在570nm附近,M=Ba时在500nm附近。

Claims (11)

1、发光材料,特别是一种LED用磷光体,其可在380-470nm的紫外-蓝光区域被激发,其特征在于掺杂Eu的一般组成为MSi2O2N2的主体晶格,其中M是选自Ca、Sr、Ba的至少一种碱土金属,Eu占M的比例为0.1-30%。
2、权利要求1的紫外-蓝光激发的发光材料,其中M是钙以获得绿光发射。
3、权利要求1的紫外-蓝光激发的发光材料,其中M是至少两种这些金属的混合物。
4、权利要求1的紫外-蓝光激发的发光材料,其中M还包含Zn,优选最高为40mol%。
5、权利要求1的紫外-蓝光激发的发光材料,其中Si被Ge全部或部分地替换,优选最高为25mol%。
6、权利要求1的紫外-蓝光激发的发光材料,其中的主体材料进一步用Mn掺杂,Mn的量优选为至多高达Eu掺杂量的50%。
7、权利要求1的紫外-蓝光激发的发光材料,其中的SiN部分地被AlO替换,得到由MSi2-xAlxO2+xN2-x表示的通式组合物。
8、含有前述权利要求之一的紫外-蓝光激发的发光材料的光源(20)。
9、权利要求8的光源,其中一级发射光是蓝色的,并且将权利要求1-7的紫外-蓝光激发的发光材料与其它磷光体,特别是红光发射磷光体组合,将部分一级发射光转化为较长波长的二级发射光,从而发射出白光。
10、权利要求8的光源,其中一级发射辐射是紫外的,并且将权利要求1-7的紫外-蓝光激发的发光材料与其它磷光体,特别是红光发射磷光体组合,将部分一级发射光转化为较长波长的二级发射光,从而发射出白光。
11、权利要求8的光源,其中该光源是包含至少一个LED的照明装置。
CN03801600A 2002-09-24 2003-09-23 发光材料,可特别用于led用途 Expired - Lifetime CN100592537C (zh)

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EP02021172.8 2002-09-24
EP20020021172 EP1413618A1 (en) 2002-09-24 2002-09-24 Luminescent material, especially for LED application

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008011782A1 (en) 2006-05-26 2008-01-31 Dalian Luminglight Science And Technology Co., Ltd. Silicate-containing luminescent material,its making method and the light-emitting device using the same
WO2008022552A1 (fr) 2006-08-15 2008-02-28 Luming Science And Technology Group Co., Ltd. Matériau luminescent à base de silicate avec pic multi-émission, son procédé de fabrication et son utilisation dans un dispositif d'éclairage
CN101045860B (zh) * 2002-10-16 2010-06-09 日亚化学工业株式会社 氧氮化物荧光体及其制造方法以及使用该氧氮化物荧光体的发光装置
CN101775292A (zh) * 2010-02-23 2010-07-14 厦门大学 一种Eu掺杂氮氧化物荧光粉的制备方法
CN101253814B (zh) * 2005-08-30 2010-09-01 发光物质工厂布赖通根有限责任公司 碳氮化硅酸盐发光物质
CN102585823A (zh) * 2012-01-31 2012-07-18 厦门大学 一种紫外led激发三基色氮氧化物荧光粉及其合成方法
CN101760190B (zh) * 2009-10-30 2013-07-03 彩虹集团公司 一种合成稀土掺杂氮氧化物荧光粉及其制备方法
US8664847B2 (en) 2007-02-02 2014-03-04 Osram Opto Semiconductors Gmbh Arrangement and method for generating mixed light
CN104371710A (zh) * 2014-11-14 2015-02-25 广东华科新材料研究院有限公司 一种新型绿色氮硅氧荧光粉及其制备方法
CN105838371A (zh) * 2016-04-27 2016-08-10 山东盈光新材料有限公司 一种led用氮氧化物荧光粉及制备方法

Families Citing this family (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100891403B1 (ko) 2002-08-01 2009-04-02 니치아 카가쿠 고교 가부시키가이샤 반도체 발광 소자 및 그 제조 방법과 그것을 이용한 발광장치
EP1413619A1 (en) * 2002-09-24 2004-04-28 Osram Opto Semiconductors GmbH Luminescent material, especially for LED application
DE60305958T2 (de) * 2002-10-14 2007-01-25 Philips Intellectual Property & Standards Gmbh Lichtemittierendes bauelement mit einem eu(ii)-aktivierten leuchtstoff
US6717353B1 (en) * 2002-10-14 2004-04-06 Lumileds Lighting U.S., Llc Phosphor converted light emitting device
JP4442101B2 (ja) * 2003-03-14 2010-03-31 日亜化学工業株式会社 酸窒化物蛍光体及びそれを用いた発光装置
MY149573A (en) * 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
JP2004210921A (ja) * 2002-12-27 2004-07-29 Nichia Chem Ind Ltd オキシ窒化物蛍光体及びその製造方法並びにそれを用いた発光装置
US7368179B2 (en) 2003-04-21 2008-05-06 Sarnoff Corporation Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors
US7723740B2 (en) * 2003-09-18 2010-05-25 Nichia Corporation Light emitting device
TW200523340A (en) * 2003-09-24 2005-07-16 Patent Treuhand Ges Fur Elek Sche Gluhlampen Mbh Hochefeizienter leuchtstoff
US7965031B2 (en) 2003-09-24 2011-06-21 Osram Gesellschaft mit beschränkter Haftung White-emitting LED having a defined color temperature
EP1670875B1 (de) 2003-09-24 2019-08-14 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Hocheffizientes beleuchtungssystem auf led-basis mit verbesserter farbwiedergabe
KR101130029B1 (ko) 2003-09-24 2012-03-28 오스람 아게 녹색 발광 led
JP4568894B2 (ja) 2003-11-28 2010-10-27 Dowaエレクトロニクス株式会社 複合導体および超電導機器システム
JP4511849B2 (ja) 2004-02-27 2010-07-28 Dowaエレクトロニクス株式会社 蛍光体およびその製造方法、光源、並びにled
JP2005298721A (ja) * 2004-04-14 2005-10-27 Nichia Chem Ind Ltd 酸窒化物蛍光体及びそれを用いた発光装置
EP1980605B1 (en) 2004-04-27 2012-02-22 Panasonic Corporation Light-emitting Device
JP4524468B2 (ja) * 2004-05-14 2010-08-18 Dowaエレクトロニクス株式会社 蛍光体とその製造方法および当該蛍光体を用いた光源並びにled
JP4491585B2 (ja) * 2004-05-28 2010-06-30 Dowaエレクトロニクス株式会社 金属ペーストの製造方法
JP4414821B2 (ja) * 2004-06-25 2010-02-10 Dowaエレクトロニクス株式会社 蛍光体並びに光源およびled
JP2008506011A (ja) 2004-07-06 2008-02-28 サーノフ コーポレーション 効率的な緑色発光蛍光体、及び赤色発光蛍光体との組合せ
JP4511885B2 (ja) 2004-07-09 2010-07-28 Dowaエレクトロニクス株式会社 蛍光体及びled並びに光源
JP4521227B2 (ja) 2004-07-14 2010-08-11 株式会社東芝 窒素を含有する蛍光体の製造方法
JP4422653B2 (ja) * 2004-07-28 2010-02-24 Dowaエレクトロニクス株式会社 蛍光体およびその製造方法、並びに光源
JP4933739B2 (ja) * 2004-08-02 2012-05-16 Dowaホールディングス株式会社 電子線励起用の蛍光体および蛍光体膜、並びにそれらを用いたカラー表示装置
US7138756B2 (en) * 2004-08-02 2006-11-21 Dowa Mining Co., Ltd. Phosphor for electron beam excitation and color display device using the same
JP4524470B2 (ja) 2004-08-20 2010-08-18 Dowaエレクトロニクス株式会社 蛍光体およびその製造方法、並びに当該蛍光体を用いた光源
US7476338B2 (en) * 2004-08-27 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
JP4543250B2 (ja) * 2004-08-27 2010-09-15 Dowaエレクトロニクス株式会社 蛍光体混合物および発光装置
JP2006257385A (ja) * 2004-09-09 2006-09-28 Showa Denko Kk 酸窒化物系蛍光体及びその製造法
EP1806389B1 (en) 2004-09-22 2012-03-28 National Institute for Materials Science Phosphor, process for producing the same and luminescence apparatus
KR100851562B1 (ko) * 2004-09-29 2008-08-12 쇼와 덴코 가부시키가이샤 산질화물계 형광체 및 그 제조방법
DE112005002246T5 (de) 2004-09-29 2007-08-16 Showa Denko K.K. Fluoreszierendes Material auf Oxynitrid-Basis und Verfahren zur Herstellung hierfür
JP4754919B2 (ja) * 2004-09-29 2011-08-24 昭和電工株式会社 酸窒化物系蛍光体及びその製造法
DE102004051395A1 (de) 2004-10-21 2006-04-27 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Hocheffizienter stabiler Oxinitrid-Leuchtstoff
JP4543253B2 (ja) * 2004-10-28 2010-09-15 Dowaエレクトロニクス株式会社 蛍光体混合物および発光装置
JP4798335B2 (ja) * 2004-12-20 2011-10-19 Dowaエレクトロニクス株式会社 蛍光体および蛍光体を用いた光源
JP4401348B2 (ja) * 2004-12-28 2010-01-20 シャープ株式会社 発光デバイスならびにそれを用いた照明機器および表示機器
EP1854339B1 (en) * 2005-02-17 2013-04-24 Philips Intellectual Property & Standards GmbH Illumination system comprising a green-emitting ceramic luminescence converter
EP1853681B1 (en) 2005-02-21 2009-10-14 Philips Intellectual Property & Standards GmbH Illumination system comprising a radiation source and a luminescent material
JP4892193B2 (ja) 2005-03-01 2012-03-07 Dowaホールディングス株式会社 蛍光体混合物および発光装置
US7524437B2 (en) * 2005-03-04 2009-04-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
US7276183B2 (en) * 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
US7443094B2 (en) * 2005-03-31 2008-10-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
US7445730B2 (en) 2005-03-31 2008-11-04 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
DE102006016548B9 (de) 2005-04-15 2021-12-16 Osram Gmbh Blau bis Gelb-Orange emittierender Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff
DE102005019376A1 (de) * 2005-04-26 2006-11-02 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Lumineszenzkonversions-LED
JP4975269B2 (ja) * 2005-04-28 2012-07-11 Dowaホールディングス株式会社 蛍光体およびその製造方法、並びに当該蛍光体を用いた発光装置
US7981321B2 (en) 2005-06-30 2011-07-19 Koninklijke Philips Electronics N.V. Illumination system comprising a yellow green-emitting luminescent material
US20070125984A1 (en) * 2005-12-01 2007-06-07 Sarnoff Corporation Phosphors protected against moisture and LED lighting devices
US8906262B2 (en) * 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
JP4991027B2 (ja) * 2005-12-26 2012-08-01 日亜化学工業株式会社 オキシ窒化物蛍光体及びそれを用いた発光装置
CN101385145B (zh) 2006-01-05 2011-06-08 伊鲁米特克斯公司 用于引导来自led的光的分立光学装置
JP2007200377A (ja) * 2006-01-23 2007-08-09 Matsushita Electric Ind Co Ltd スロットイン型ディスク装置
JP4817931B2 (ja) * 2006-03-31 2011-11-16 京セラ株式会社 発光装置および発光モジュール
WO2007088909A1 (ja) * 2006-01-31 2007-08-09 Kyocera Corporation 発光装置および発光モジュール
JP4925673B2 (ja) * 2006-01-31 2012-05-09 京セラ株式会社 発光装置および発光モジュール
JP5036205B2 (ja) * 2006-03-31 2012-09-26 京セラ株式会社 発光装置および発光モジュール
US20090033201A1 (en) * 2006-02-02 2009-02-05 Mitsubishi Chemical Corporation Complex oxynitride phosphor, light-emitting device using same, image display, illuminating device, phosphor-containing composition and complex oxynitride
DE102006008300A1 (de) 2006-02-22 2007-08-30 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff sowie Herstellverfahren für den Leuchtstoff
KR100735453B1 (ko) * 2006-02-22 2007-07-04 삼성전기주식회사 백색 발광 장치
JP4733535B2 (ja) * 2006-02-24 2011-07-27 パナソニック株式会社 酸窒化物蛍光体、酸窒化物蛍光体の製造方法、半導体発光装置、発光装置、光源、照明装置、及び画像表示装置
TW200807104A (en) 2006-04-19 2008-02-01 Mitsubishi Chem Corp Color image display device
US8282986B2 (en) 2006-05-18 2012-10-09 Osram Sylvania, Inc. Method of applying phosphor coatings
US7820075B2 (en) 2006-08-10 2010-10-26 Intematix Corporation Phosphor composition with self-adjusting chromaticity
EP2070123A2 (en) 2006-10-02 2009-06-17 Illumitex, Inc. Led system and method
KR101497104B1 (ko) 2006-10-03 2015-02-27 라이트스케이프 머티어리얼스, 인코포레이티드 금속 실리케이트 할라이드 형광체 및 이를 이용한 led 조명 디바이스
US7857994B2 (en) 2007-05-30 2010-12-28 GE Lighting Solutions, LLC Green emitting phosphors and blends thereof
JP5710089B2 (ja) * 2007-06-25 2015-04-30 三星電子株式会社Samsung Electronics Co.,Ltd. 緑色発光酸窒化物蛍光体、及びそれを用いた発光素子
CN101157854B (zh) * 2007-07-02 2010-10-13 北京宇极科技发展有限公司 一种氮氧化合物发光材料、其制备方法及其应用
DE102007035592B4 (de) 2007-07-30 2023-05-04 Osram Gmbh Temperaturstabiler Leuchtstoff, Verwendung eines Leuchtstoffs und Verfahren zur Herstellung eines Leuchtstoffs
EP2180031A4 (en) * 2007-08-01 2011-05-25 Mitsubishi Chem Corp PHOSPHORUS AND METHOD OF PREPARATION THEREOF, CRYSTALLINE SILICONIUM NITRIDE AND METHOD OF PRODUCTION THEREOF, PHOSPHORUS COMPOSITION, LIGHT-EMITTING COMPONENT WITH THE PHOSPHORIC, IMAGE DISPLAY DEVICE AND LIGHTING APPARATUS
KR101592836B1 (ko) 2008-02-07 2016-02-05 미쓰비시 가가꾸 가부시키가이샤 반도체 발광 장치, 백라이트, 컬러 화상 표시 장치, 및 그들에 사용하는 형광체
CN101939849A (zh) 2008-02-08 2011-01-05 伊鲁米特克有限公司 用于发射器层成形的***和方法
US8220971B2 (en) 2008-11-21 2012-07-17 Xicato, Inc. Light emitting diode module with three part color matching
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
KR101055762B1 (ko) * 2009-09-01 2011-08-11 서울반도체 주식회사 옥시오소실리케이트 발광체를 갖는 발광 물질을 채택한 발광 장치
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
KR20110050206A (ko) * 2009-11-06 2011-05-13 삼성전자주식회사 옥시나이트라이드 형광체, 그 제조 방법 및 그것을 사용한 백색 발광 소자
DE102009055185A1 (de) 2009-12-22 2011-06-30 Osram Gesellschaft mit beschränkter Haftung, 81543 Leuchtstoff und Lichtquelle mit derartigen Leuchtstoff
JP2011225822A (ja) * 2010-02-26 2011-11-10 Mitsubishi Chemicals Corp ハロリン酸塩蛍光体、それを用いた発光装置及び照明装置
US20120267999A1 (en) * 2010-02-26 2012-10-25 Mitsubishi Chemical Corporation Halophosphate phosphor and white light-emitting device
DE102010028949A1 (de) 2010-05-12 2011-11-17 Osram Gesellschaft mit beschränkter Haftung Scheinwerfermodul
TW201202391A (en) * 2010-07-14 2012-01-16 Forward Electronics Co Ltd Phosphor composition for AC LED and AC LED manufactured by using the same
US20120051045A1 (en) 2010-08-27 2012-03-01 Xicato, Inc. Led Based Illumination Module Color Matched To An Arbitrary Light Source
KR101235179B1 (ko) * 2010-11-02 2013-02-20 주식회사 에클립스 백색 발광다이오드 소자용 시온계 산화질화물 형광체, 그의 제조방법 및 그를 이용한 백색 led 소자
JP2012132001A (ja) * 2010-12-02 2012-07-12 Niigata Univ 蛍光体の製造方法
KR101264308B1 (ko) 2010-12-31 2013-05-22 금호전기주식회사 형광체 및 그 제조방법
KR20120088130A (ko) * 2011-01-31 2012-08-08 서울반도체 주식회사 파장변환층을 갖는 발광 소자 및 그것을 제조하는 방법
JP2013064033A (ja) * 2011-09-15 2013-04-11 Panasonic Corp 発光装置
CN104114671B (zh) 2012-02-16 2016-10-26 皇家飞利浦有限公司 用于半导体led的涂布的窄带发红光氟硅酸盐
US8471460B1 (en) 2012-04-05 2013-06-25 Epistar Corporation Phosphor
KR101970774B1 (ko) * 2012-07-17 2019-04-19 엘지이노텍 주식회사 형광체 및 발광 장치
KR101990919B1 (ko) * 2012-10-09 2019-06-19 엘지이노텍 주식회사 형광체 및 발광 장치
CN102911659A (zh) * 2012-10-15 2013-02-06 彩虹集团公司 一种氮氧化物荧光粉及其合成方法
TWI568832B (zh) * 2012-10-18 2017-02-01 晶元光電股份有限公司 螢光材料及其製備方法
EP2915197B1 (en) 2012-11-01 2020-02-05 Lumileds Holding B.V. Led-based device with wide color gamut
CN103998571B (zh) * 2012-12-14 2016-03-23 电化株式会社 荧光体、其制备方法及发光装置
JP2013256675A (ja) * 2013-10-02 2013-12-26 Nec Lighting Ltd 緑色発光酸窒化物蛍光体
KR20150069618A (ko) * 2013-12-13 2015-06-24 주식회사 효성 반도체 레이저 다이오드용 청색 발광 물질
JP2015131898A (ja) * 2014-01-10 2015-07-23 電気化学工業株式会社 蛍光体及び発光装置
KR102214067B1 (ko) 2014-02-27 2021-02-09 엘지전자 주식회사 산 질화물 형광체, 그 제조 방법 및 이를 이용한 발광 소자 패키지
JP6457121B2 (ja) * 2015-06-08 2019-01-23 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH 複合酸窒化セラミック変換体およびこの変換体を備えた光源
US11729915B1 (en) * 2022-03-22 2023-08-15 Tactotek Oy Method for manufacturing a number of electrical nodes, electrical node module, electrical node, and multilayer structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255670B1 (en) * 1998-02-06 2001-07-03 General Electric Company Phosphors for light generation from light emitting semiconductors
US6278135B1 (en) * 1998-02-06 2001-08-21 General Electric Company Green-light emitting phosphors and light sources using the same
EP1104799A1 (en) * 1999-11-30 2001-06-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Red emitting luminescent material
JP2002076434A (ja) * 2000-08-28 2002-03-15 Toyoda Gosei Co Ltd 発光装置
US6802990B2 (en) * 2000-09-29 2004-10-12 Sumitomo Chemical Company, Limited Fluorescent substances for vacuum ultraviolet radiation excited light-emitting devices
DE10147040A1 (de) * 2001-09-25 2003-04-24 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Beleuchtungseinheit mit mindestens einer LED als Lichtquelle
DE60305958T2 (de) * 2002-10-14 2007-01-25 Philips Intellectual Property & Standards Gmbh Lichtemittierendes bauelement mit einem eu(ii)-aktivierten leuchtstoff
US6717353B1 (en) * 2002-10-14 2004-04-06 Lumileds Lighting U.S., Llc Phosphor converted light emitting device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101045860B (zh) * 2002-10-16 2010-06-09 日亚化学工业株式会社 氧氮化物荧光体及其制造方法以及使用该氧氮化物荧光体的发光装置
CN101253814B (zh) * 2005-08-30 2010-09-01 发光物质工厂布赖通根有限责任公司 碳氮化硅酸盐发光物质
WO2008011782A1 (en) 2006-05-26 2008-01-31 Dalian Luminglight Science And Technology Co., Ltd. Silicate-containing luminescent material,its making method and the light-emitting device using the same
WO2008022552A1 (fr) 2006-08-15 2008-02-28 Luming Science And Technology Group Co., Ltd. Matériau luminescent à base de silicate avec pic multi-émission, son procédé de fabrication et son utilisation dans un dispositif d'éclairage
US8664847B2 (en) 2007-02-02 2014-03-04 Osram Opto Semiconductors Gmbh Arrangement and method for generating mixed light
CN101760190B (zh) * 2009-10-30 2013-07-03 彩虹集团公司 一种合成稀土掺杂氮氧化物荧光粉及其制备方法
CN101775292A (zh) * 2010-02-23 2010-07-14 厦门大学 一种Eu掺杂氮氧化物荧光粉的制备方法
CN102585823A (zh) * 2012-01-31 2012-07-18 厦门大学 一种紫外led激发三基色氮氧化物荧光粉及其合成方法
CN104371710A (zh) * 2014-11-14 2015-02-25 广东华科新材料研究院有限公司 一种新型绿色氮硅氧荧光粉及其制备方法
CN105838371A (zh) * 2016-04-27 2016-08-10 山东盈光新材料有限公司 一种led用氮氧化物荧光粉及制备方法

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WO2004030109A1 (en) 2004-04-08
TW200408149A (en) 2004-05-16
DE60307415T2 (de) 2007-03-29
US20050205845A1 (en) 2005-09-22
EP1449264A1 (en) 2004-08-25
WO2004030109A8 (en) 2004-06-10
CN100592537C (zh) 2010-02-24
TWI283078B (en) 2007-06-21
JP3851331B2 (ja) 2006-11-29
EP1449264B1 (en) 2006-08-09
JP2005530917A (ja) 2005-10-13

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