CN1348328A - 半导体器件和半导体模块 - Google Patents
半导体器件和半导体模块 Download PDFInfo
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- CN1348328A CN1348328A CN01117312A CN01117312A CN1348328A CN 1348328 A CN1348328 A CN 1348328A CN 01117312 A CN01117312 A CN 01117312A CN 01117312 A CN01117312 A CN 01117312A CN 1348328 A CN1348328 A CN 1348328A
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Abstract
在硬盘中安装了固定连接着读写放大用IC的FCA。但是,由于读写放大用IC的散热性较差,该读写放大用IC的温度上升,则读写速度大大降低。这样对硬盘本身的特性产生了很大的影响。在绝缘性树脂13的里面露出散热用的电极15,在该散热用的电极15上固定连接金属板23。该金属板23的里面成为与柔性片的里面实质上同面的位置,而能够与第二支撑部件24简单地固定连接。这样,从半导体器件产生的热量可以通过散热用的电极15、金属板23、第二支撑部件24而良好地释放。
Description
本发明涉及半导体器件和半导体模块,特别是涉及能够良好地释放来自半导体元件的热量的构造。
近年来,半导体器件,随着向便携装置和小型、高密度安装机器的采用,就要求在轻薄短小的情况下的散热性。但是,半导体器件安装在各种基板上,作为包含该基板的半导体模块,被安装在各种装置中。基板可以考虑采用:硅基板、印刷电路板、柔性片、金属基板或者玻璃基板等,在此,作为安装在柔性片上的半导体模块,下面描述了其一个例子。而且,在实施例中,可以采用这些基板。
在图14中,表示了使用柔性片的半导体模块安装在硬盘100中的情况。该硬盘100例如在日经ェレクトロニクス(日经电子设备)1997年6月16日(No.691)P92~中详细描述了。
该硬盘100安装在由金属构成的箱体101中,多张记录盘102一体地安装在主轴电动机103上,在各个记录盘102的表面上通过间隙而配置了磁头104。该磁头104安装在固定在杆105顶端上的悬臂106的顶端上。而且,磁头104、悬臂106、杆105为一体的,该一体物安装在致动器107上。
为了通过该磁头104进行写入、读出,记录盘102需要与读写放大用IC108进行电连接。因此,使用在柔性片109上安装了该读写放大用IC108的半导体模块110,设在半导体模块110上的布线最终与磁头104进行电连接。该半导体模块110被称为柔性电路组件,一般简称为FCA。
而且,在箱体101的里面,安装在半导体模块110上的连接器111伸出头,该连接器(雌型或者雄型)111与安装在主板112上的连接器(雄型或者雌型)相连接。而且,在该主板112上设置布线,安装主轴电动机103的驱动用IC、缓冲存储器、用于其他的驱动的IC、例如ASIC等。
例如,记录盘102通过主轴电动机103而以4500rpm旋转,磁头104通过致动器107来决定其位置。该旋转机构由于被设在箱体101上的盖体所密闭,而使热几乎都蓄积起来,读写放大用IC108的温度上升。因此,读写放大用IC108安装在箱体101等散热良好的部分上。而且,主轴电动机的旋转具有5400、7100、10000rpm的高速倾向,则散热更加重要。
为了进一步说明上述FCA,在图15中表示了其构造。图15A是其平面图,图15B是断面图,用A-A线来剖开设在顶端的读写放大用IC108的一部分。该FCA110被弯曲而安装在箱体101内的一部分上,因此,采用具有易于弯曲加工的平面形的第一柔性片109。
在该FCA110的左端安装连接器111,成为第一连接部。与该连接器111电连接的第一布线121贴合在第一柔性片109上,延伸到右端。而且,上述第一布线121与读写放大用IC108电连接。而且,与磁头104相连接的读写放大用IC108的引线122与第二布线123相连接,该第二布线123与杆105、悬臂106上设置的第二柔性片124上的第三布线126电连接。即,第一柔性片109的右端成为第二连接部127,在此,与第二柔性片124相连接。而且,第一柔性片109和第二柔性片124可以一体设置。在此情况下,第二布线123和第三布线126一体设置。
在设置读写放大用IC108的第一柔性片109的里面设有支撑部件128。该支撑部件128使用陶瓷基板、Al基板。通过该支撑部件128,与在箱体101内部露出的金属热结合,读写放大用IC108的热量被释放到外部。
下面参照图15B来说明读写放大用IC108和第一柔性片109的连接构造。
该第一柔性片109从下层开始层叠了第一聚酰亚胺片130(以下称为第一PI片)、第一粘接层131、导电图形132、第二粘接层133以及第二聚酰亚胺片134(以下称为第二PI片),在第一、第二PI片130、134上层叠导电图形132。
而且,为了连接读写放大用IC108,而去除所希望位置的第二PI片134和第二粘接层133,而形成开口部135,在此露出导电图形132。如图所示的那样,通过引线122来使读写放大用IC108电连接。
在图15B中,用绝缘性树脂136所封装的半导体器件以用箭头表示的散热路径而释放到外部,特别是,绝缘性树脂136成为热阻,总的来看,存在从读写放大用IC108产生的热量不能高效地释放到外部的问题。
而且,用硬盘进行说明。该硬盘的读写传输率为500MHz~1GHz,而且,要求其以上的频率,就必须使读写放大用IC108的读写速度为高速的。因此,就必须缩短与读写放大用IC108相连接的柔性片上的布线的路径,来防止读写放大用IC108的温度上升。
特别是,记录盘102以高速旋转,由于成为用盖体密闭了箱体101的空间,则内部温度上升了70度~80度左右。另一方面,一般的IC的工作允许温度为约125度,读写放大用IC125允许从内部温度80度上升约45度。如图所示的那样,当半导体器件本身的热阻、FCA的热阻较大时,读写放大用IC108已经超出了工作允许温度,超出了本来的能力。因此,要求散热性良好的半导体器件、FCA。
由于工作频率在今后会更高,则读写放大用IC108本身由于通过运算处理而产生的热量而存在温度上升的问题。在常温下,能够实现目标的工作频率,而在硬盘的内部,由于其温度上升,必须降低工作频率。
如上述那样,随着今后工作频率的增加,半导体器件、半导体模块(FCA)就要求更好的散热性。
另一方面,致动器107本身、安装在其上的杆105、悬臂106和磁头104,为了减小转动惯量,必须尽可能地轻。特别是,如图14所示的那样,当把读写放大用IC108安装在致动器107的表面上时,要求该IC108的轻量化、FCA110的轻量化。
鉴于上述问题,本发明的第一解决方案是:一种半导体器件,用绝缘性树脂一体地封装半导体元件,在其里面,露出与上述半导体元件的焊接电极电连接的焊盘和与上述半导体元件的里面热结合的散热用的电极,其特征在于,
在上述散热用的电极的露出部上设置金属板,以便于从上述焊盘的里面突出。
该突出的金属板形成作为第一支撑部件的柔性片里面和表面位置,因此,成为金属板能够与作为第二支撑部件的散热板相粘接或者相接触的构造。这样,能够把半导体元件的热量传导到散热板上。
本发明的第二解决方案是:上述焊盘的里面和上述散热用的电极的里面实质上配置在同一平面上。
本发明的第三解决方案是:上述半导体元件和上述散热用的电极用绝缘材料或者导电材料固定连接。
本发明的第四解决方案是:上述散热用的电极和上述金属板用绝缘材料或者导电材料固定连接。
本发明的第五解决方案是:上述散热用的电极和上述金属板用同一材料一体地形成。
本发明的第六解决方案是:上述绝缘性树脂的里面从上述焊盘的里面突出。
本发明的第七解决方案是:上述焊盘的侧面和从上述焊盘的侧面延伸的上述绝缘性树脂的里面描绘出同一曲面。
绝缘性树脂的里面描绘出蚀刻面,弯曲并突出。与该弯曲部相邻,配置焊锡等焊料,通过该部分能够防止焊料相互短路。
本发明的第八解决方案是:一种半导体模块,具有:
设有导电图形的第一支撑部件;
半导体器件,用绝缘性树脂一体地封装与上述导电图形电连接的半导体元件,在其里面,露出与上述半导体元件的焊接电极电连接的焊盘和与上述半导体元件的里面热结合的散热用的电极,其特征在于,
把设在上述第一支撑部件上的导电图形与上述焊盘进行电连接,在与上述散热用的电极相对应的上述第一支撑部件上设有开口部,在上述开口部中设置与上述散热用的电极固定连接的金属板。
本发明的第九解决方案是:在上述第一支撑部件的里面粘贴上述金属板所固定连接的第二支撑部件。
本发明的第十解决方案是:上述散热用的电极和上述金属板用同一材料一体地形成。
本发明的第十一解决方案是:在与上述金属板相对应的上述第二支撑部件上设置由导电材料构成的固定连接板,把上述固定连接板与上述金属板进行热结合。
本发明的第十二解决方案是:上述金属板把Cu作为主要材料,上述第二支撑部件把Al作为主要材料,上述固定连接板由把在上述第二支撑部件上所形成的Cu作为主要材料的镀膜组成。
本发明的第十三解决方案是:上述绝缘性树脂的里面从上述焊盘的里面突出。
本发明的第十四解决方案是:上述焊盘的侧面和从上述焊盘的侧面延伸的上述绝缘性树脂的里面描绘出同一曲面。
本发明的第十五解决方案是:上述半导体元件是硬盘的读写放大用IC。
本发明的第十六解决方案是:一种半导体器件,用绝缘性树脂一体地封装半导体元件,在其里面,露出与上述半导体元件的焊接电极电连接的焊盘、通过与上述焊盘一体的布线而延伸的外部连接电极、与上述半导体元件的里面热结合的散热用的电极,其特征在于,
在上述散热用的电极的露出部上设置金属板,以便于从上述外部连接电极的里面突出。
本发明的第十七解决方案是:上述外部连接电极的里面和上述散热用的电极的里面实质上配置在同一平面上。
本发明的第十八解决方案是:上述半导体元件和上述散热用的电极用绝缘材料或者导电材料固定连接。
本发明的第十九解决方案是:上述散热用的电极和上述金属板用绝缘材料或者导电材料固定连接。
本发明的第二十解决方案是:上述散热用的电极和上述金属板用同一材料一体地形成。
本发明的第二十一解决方案是:上述绝缘性树脂的里面从上述外部连接电极的里面突出。
本发明的第二十二解决方案是:上述外部连接电极的侧面和从上述外部连接电极的侧面延伸的上述绝缘材料的里面描绘出同一曲面。
本发明的第二十三解决方案是:一种半导体模块,具有:
设有导电图形的第一支撑部件;
半导体器件,用绝缘性树脂一体地封装与上述导电图形电连接的半导体元件,在其里面,露出与上述半导体元件的焊接电极电连接的焊盘、通过与上述焊盘一体的布线而设置的外部连接电极、与上述半导体元件的里面热结合的散热用的电极,其特征在于,
把设在上述第一支撑部件上的导电图形与上述外部连接电极进行电连接,在与上述散热用的电极相对应的上述第一支撑部件上设有开口部,在上述开口部中设置与上述散热用的电极固定连接的金属板。
本发明的第二十四解决方案是:在上述第一支撑部件的里面粘贴上述金属板所固定连接的第二支撑部件。
本发明的第二十五解决方案是:上述散热用的电极和上述金属板用同一材料一体地形成。
本发明的第二十六解决方案是:在与上述金属板相对应的上述第二支撑部件上设置由导电材料构成的固定连接板,把上述固定连接板与上述金属板进行热结合。
本发明的第二十七解决方案是:上述金属板把Cu作为主要材料,上述第二支撑部件把Al作为主要材料,上述固定连接板由把在上述第二支撑部件上所形成的Cu作为主要材料的镀膜组成。
本发明的第二十八解决方案是:上述绝缘性粘接装置的里面从上述外部连接电极的里面突出。
本发明的第二十九解决方案是:上述外部连接电极的侧面和与上述外部连接电极焊接的上述绝缘性粘接装置的里面描绘出同一曲面。
本发明的第三十解决方案是:上述半导体元件是硬盘的读写放大用IC。
本发明的这些和其他的目的、优点及特征将通过结合附图对本发明的实施例的描述而得到进一步说明。在这些附图中:
图1是说明本发明的半导体模块的图;
图2是说明本发明的半导体器件的图;
图3是说明本发明的半导体器件的图;
图4是说明本发明的半导体器件的制造方法的图;
图5是说明本发明的半导体器件的制造方法的图;
图6是说明本发明的半导体器件的制造方法的图;
图7是说明本发明的半导体器件的制造方法的图;
图8是说明本发明的半导体器件的制造方法的图;
图9是说明本发明的半导体模块的图;
图10是说明本发明的半导体器件的制造方法的图;
图11是说明本发明的半导体器件的制造方法的图;
图12是说明本发明的半导体器件的制造方法的图;
图13是说明本发明的半导体器件的图;
图14是说明硬盘的图;
图15是说明图14中所采用的现有的半导体模块的图。
本发明提供高散热性并且轻薄短小的半导体器件,同时,提供安装了该半导体器件的半导体模块,例如,安装在柔性片上的半导体模块(以下称为FCA),实现了安装了该FCA的装置例如硬盘的特性改善。
首先,作为安装了FCA的装置的一例,在图14中参照硬盘100,在图1中表示了FCA。并且,在图2~图13中表示了安装了该FCA的半导体器件及其制造方法。
说明安装了FCA110的装置的第一实施例
作为该装置,再次说明在现有例子中说明的硬盘100。
硬盘100安装在计算机等中,因此,根据需要而安装在主板112上。该主板112安装了雌型(或者雄型)的连接器。而且,安装在FCA上的从箱体101的里面露出的雄型(或者雌型)的连接器111与上述主板112上的连接器相连接。而且,在箱体101,按照其容量而层叠了多张作为记录媒体的记录盘102。磁头104以20~30nm左右浮在记录盘102上,进行扫描,因此,记录盘102之间的间隔被设定为在该扫描中不发生问题的间隔。而且,在维持该间隔的同时,安装在主轴电动机103上。而且,该主轴电动机103安装在安装用的基板上,配置在安装基板的里面的连接器从箱体101的里面露头。而且,该连接器与主板112的连接器相连接。这样,在主板112上安装驱动磁头104的读写放大用IC108的IC、驱动主轴电动机103的IC、驱动致动器的IC、暂时保管数据的缓冲存储器、实现制造商独有的驱动的ASIC等。当然,也可以安装其他的无源元件、有源元件。
而且,考虑到尽可能缩短连接磁头104与读写放大用IC108的布线,读写放大用IC108配置在致动器107上。但是,上述本发明的半导体器件是非常薄型并且重量轻的,除致动器之外,可以安装在杆105或者悬臂106上。在此情况下,如图1所示的那样,半导体器件10的里面从第一支撑部件11的开口部12露出,半导体器件10的里面与杆105或者悬臂106热结合,半导体器件10的热量通过杆105、箱体101释放到外部。而且,由于选择硬盘作为应用例,则选定柔性片作为第一支撑部件,但是,根据装置的不同,可以选定印刷电路板和陶瓷基板作为第一支撑部件。
说明半导体器件的第二实施例
首先,参照图2对本发明的半导体器件进行说明。而且,图2A是半导体器件的平面图,图2B是A-A线的断面图。
在图2中,在绝缘性树脂13中埋入了以下构成部件,即,埋入焊盘14…、设在围绕该焊盘14的区域中的散热用的电极15、设在该散热用的电极15上的半导体元件16。而且,半导体元件16通过绝缘性粘接装置17与散热用的电极15固定连接,考虑到粘接性而分成4份。通过分成4份所形成的分离槽用标号18表示。
半导体元件16的焊接电极19和焊盘14通过金属细线20电连接。
上述焊盘14的里面从绝缘性树脂13露出,原封不动地成为外部连接电极21,焊盘14…的侧面以各向异性被蚀刻,在此,由于以湿腐蚀而形成,则具有弯曲构造,通过该弯曲构造产生锚地效果。
本构造由半导体元件16、多个焊盘14,15、绝缘性粘接装置17、埋入它们的绝缘性树脂13这4种材料所构成。而且,在半导体元件16的配置区域中,在散热用的电极15上以及其间形成上述绝缘性粘接装置17,特别是,在通过蚀刻所形成的分离槽18中设置上述绝缘性粘接装置17,其里面从半导体器件10A的里面所露出。而且,它们都被绝缘性树脂13封装。这样,通过绝缘性树脂13来支撑上述焊盘14…、半导体元件16。
作为绝缘性粘接装置17,最好是由绝缘材料组成的粘接剂、粘接性的绝缘片。如从以后的制造方法所看到的那样,最好是能够粘贴到整个晶片上并通过ホトリソダラフィ来构图的材料。而且,当散热用的电极15和半导体元件16的里面可以电连接时,可以使用焊锡材料、导电膏等来取代绝缘性粘接装置17。
作为绝缘性树脂,可以使用环氧树脂等热固性树脂、聚酰亚胺树脂、聚苯撑硫醚等热塑性树脂。
而且,如果绝缘性树脂是使用金属模而固化的树脂、能够进行浸渍,涂敷而被覆的树脂,就能全部采用树脂。而且,作为焊盘14,可以使用以Cu作为主要材料的导电箔、以Al作为主要材料的导电箔、或者Fe-Ni合金、Al-Cu的层叠体、Al-Cu-Al的层叠体等。当然,也可以使用其他导电材料,特别是,最好是能够蚀刻的导电材料、通过激光而蒸发的导电材料。而且,考虑到半腐蚀性、电镀的形成性、热应力,最好是把以压延所形成的Cu作为主要材料的导电材料。
在本发明中,由于绝缘性树脂13和绝缘性粘接装置17被填充在分离槽18、22中,而具有能够防止导电图形的脱落的特征。而且,通过采用干腐蚀或者湿腐蚀作为蚀刻,来进行各向异性的腐蚀,就能把焊盘14…的侧面作为弯曲构造,而产生锚地效果。其结果,能够实现导电图形14、散热用的电极15不会从绝缘性树脂13脱落的构造。
散热用的电极15的里面在封装的里面露出。这样,散热用的电极15的里面成为这样的构造:能够与后面说明的金属板23、第二支撑部件24或者被覆盖在第二支撑部件24上的固定连接板25相接触或者固定连接。这样,通过该构造,从半导体元件16产生的热量能够散热到第二支撑部件24上,能够防止半导体元件16的温度升高,能够相应地增大半导体元件16的驱动电流和驱动频率。
本半导体器件10A用作为封装树脂的绝缘性树脂13来支撑焊盘14、散热用的电极15,因此,不需要支撑基板。该构成是本发明的特征。现有的半导体器件的导电电路由支撑基板(柔性片、印刷电路板或者陶瓷基板)所支撑,或者由引线架所支撑,因此,附加了本来不需要也可以的构成。但是,本电路装置由最小限度的构成部件所构成,而不需要支撑基板,因此,具有成为薄型·重量轻并且由于能够抑制材料费而成为廉价的特征。
而且,封装的里面,焊盘14、散热用的电极15露出。当在该区域被覆了例如焊锡等焊锡材料时,由于散热用的电极15一方的面积较大,焊锡材料的膜厚不同而浸湿。因此,为了使该焊锡材料成为均匀的,在半导体器件10A的里面形成绝缘被覆膜26。在图2A中表示的虚线27表示从绝缘被覆膜26露出的露出部,在此,由于焊盘14的里面以矩形露出,则与其相同尺寸从绝缘被覆膜26露出。
这样,由于焊锡材料的浸湿部分实质上是同一尺寸的,在此所形成的焊锡材料的厚度实质上相同的。这即使在焊锡印刷后、反流之后,也是同样的。而且,在Ag、Au、Ag-Pd等的导电膏中,也是同样的。通过该构造,可以高精度地计算出金属板里面从焊盘14的里面突出多少。如图2B那样,当焊锡球形成时,由于全部焊锡球的下端能够与安装基板的导电电路相接触,就不会发生焊接不良的问题。
散热用的电极15的露出部27,考虑到半导体器件的散热性,可以大于焊盘14的露出尺寸而形成。
通过设置绝缘被覆膜26,能够使设在第一支撑部件11上的导电图形32延伸到本半导体器件的里面。一般,设在第一支撑部件11侧的导电图形32围绕上述半导体器件的固定连接区域而配置,但是,通过绝缘被覆膜26的形成,也可以不进行围绕而配置。由于绝缘性树脂13、绝缘性粘接装置17从导电图形越出,就能在第一支撑部件11侧的布线与导电图形之间形成间隙,而防止短路。
说明半导体器件10B的第三实施例
在图3中表示了本半导体器件10B。图3A是其平面图,图3B是A-A线上的断面图。而且,由于与图2的构造类似,在此仅说明不同的部分。
在图2中,焊盘14的里面原封不动地作为外部连接电极而起作用,但是,在本实施例中,在焊盘14上形成一体形成的布线30、与布线30一体形成的外部连接电极31。
而且,用虚线表示的矩形是半导体元件16,在半导体元件16的里面配置上述外部连接电极31,如图那样,配置成环状或者矩阵状。该配置为与公知的BGA相同或者类似的构造。而且,为了缓和连接部的变形,布线可以成为波形等。
当把半导体元件16原封不动地配置到导电图形14、30、31和散热用的电极15上时,两者通过半导体器件125的里面而短路。这样,绝缘性粘接装置17只能采用绝缘材料,不能使用导电材料。但是,如果半导体器件与散热用的电极的尺寸相同或者比其更小,就能使用导电性的固定连接装置。
与第一支撑部件11的导电图形32相连接的位置是外部连接电极31,焊盘14的里面、布线30的里面被绝缘被覆膜26包覆。在外部连接电极31上用虚线表示的圆形标记以及在散热用的电极15上表示的虚线的○标记是从绝缘被覆膜26露出的部分。
而且,由于外部连接电极31延伸到半导体元件16的里面,则散热用的电极15对应地形成为小于图2的散热用的电极15。这样,绝缘性粘接装置17覆盖了散热用的电极15、外部连接电极31和布线30的一部分。而且,绝缘性树脂13覆盖了焊盘14、布线30的一部分、半导体元件16和金属细线20。
本实施例,在焊盘14的数量非常多并且其尺寸较小的情况下,能够通过布线而作为外部连接电极再次配置,而具有可以大于外部连接电极31的尺寸的优点。而且,由于具有布线,就能抑制给金属细线的连接部、焊锡的连接部施加的变形。
半导体元件16和散热用的电极15被绝缘性粘接装置17固定连接,由于是绝缘材料,则其热阻成问题。但是,通过用混入了给Si氧化物和氧化铝等提供热传导的填料的硅树脂来构成绝缘性粘接装置,就能把半导体元件16的热量良好地传导到散热用的电极15上。
散热用的电极15和半导体元件16的里面的间隔通过使上述填料的直径为统一的而能够均匀形成。这样,当形成考虑到热传导的微小间隙时,在绝缘性粘接装置成为软化状态时,通过轻轻按压半导体元件16,就能容易地形成该间隙。
说明半导体器件10A、10B的制造方法的第四实施例
本制造方法仅在焊盘14、散热用的电极15的形状上不同,或者是追加了布线30、外部连接电极31的构造,除此之外,实质上是相同。
在此,使用图3的半导体器件10B来说明该制造方法。而且,图4至图8是与图3A的A-A线相对应的断面图。
首先,按图4那样准备导电箔40。厚度最好为10μm~300μm左右,在此,采用70μm的压延铜箔。接着,在该导电箔40的表面上形成导电被覆膜41或者光致抗蚀剂作为耐腐蚀掩模。而且,该图形是与图3A的焊盘14…、布线30…、外部连接电极31…、散热用的电极15相同的图形。而且当采用光致抗蚀剂来代替导电被覆膜41时,在光致抗蚀剂的下层,至少在与焊盘相对应的部分上,形成Au、Ag、Pd或者Ni等导电被覆膜。为了能够进行焊接而设置其(以上参照图4)。
接着,通过上述导电被覆膜41或者光致抗蚀剂来对导电箔40进行半腐蚀。腐蚀的深度可以浅于导电箔40的厚度。而且,如果腐蚀的深度较浅,则越浅越能形成细微的图形。
这样,通过进行半腐蚀,导电图形14、30、31、散热用的电极15在导电箔40的表面呈现突起状。而且,导电箔40,如上述那样,采用通过压延所形成的Cu作为主要材料的Cu箔。但是,也可以是由Al构成的导电箔、由Fe-Ni合金构成的导电箔、由Cu-Al构成的层叠体、由Al-Cu-Al构成的层叠体。特别是,Al-Cu-Al的层叠体能够防止由于热膨胀系数之差而产生的翘曲。
而且,在与图3的矩形的虚线对应的部分上设置绝缘性粘接装置17。该绝缘性粘接装置17设在散热用的电极15与外部连接电极31的分离槽22、散热用的电极15与布线30之间的分离槽、布线30间的分离槽以及它们之上(以上参照图5)。
接着,在设置绝缘性粘接装置17的区域上固定连接半导体元件16,把半导体元件16的焊接电极19与焊盘14电连接。在图中,由于半导体元件16通过面朝上而安装的,则采用金属细线20作为连接装置。
对于该焊接,焊盘14…与导电箔40为一体的,但是,由于导电箔40的里面是平的,则与焊接机的台面接触。这样,如果导电箔40被完全固定在焊接台上,就没有焊盘14…的位置偏移,能够把焊接能量高效地传递给金属细线20和焊盘14…。这样,能够提高金属细线20的固定连接强度来进行连接。焊接台的固定可以例如在台的整个表面上设置多个真空吸引孔。而且,可以从上面压下导电箔40。
而且,可以不采用支撑基板来安装半导体器件,半导体元件16的高度对应地配置得较低。这样,能够减薄后述的封装外形的厚度(以上参照图6)。
形成绝缘性树脂13,以便于覆盖通过半腐蚀所形成的焊盘14、从半导体元件16露出的布线30、半导体元件16和金属细线20。作为绝缘性树脂,可以是热塑性、热固性的。
而且,可以通过传递模铸、注射模铸、浸渍或者涂敷来实现。作为树脂材料,环氧树脂等热固性树脂可以通过传递模铸来实现,液晶聚合物、对聚苯硫等热塑性树脂可以通过注射模铸来实现。
在本实施例中,绝缘性树脂的厚度可以调整为:从金属细线20的顶部向上被覆约10μm。考虑到半导体器件的强度,该厚度可以加厚,也可以减薄。
而且,对于树脂注入,由于焊盘14、布线30、外部连接电极31和散热用的电极15与片状的导电箔40一体形成,则没有导电箔40的偏差,而完全没有这些铜箔图形的位置偏移。
以上,在绝缘性树脂13中买入了作为突出部所形成的焊盘14、布线30、外部连接电极31、散热用的电极15、半导体元件16,突出部下方的导电箔40从里面露出(以上参照图7)。
接着,除去在上述绝缘性树脂13发里面露出的导电箔40,而分别分离焊盘14、布线30、外部连接电极31、散热用的电极15。
该分离工序考虑各种方法,可以通过腐蚀来去除里面来进行分离,也可以通过研磨和研削进行磨削来进行分离。而且,可以采用两者。例如,当磨削到绝缘性树脂13露出时,会存在导电箔40的削渣和在外侧拉薄的凹状金属侵入绝缘性树脂13和绝缘性粘接装置17中的问题。因此,如果通过腐蚀来进行分离,在位于Cu的图形之间的绝缘性树脂13和绝缘性粘接装置17的表面上就能不会出现导电箔40的金属的侵入而形成。由此,能够防止细微间隔的图形相互间的短路。
当一体形成多个与半导体器件10B组成的单元时,在该分离的工序之后,追加切割工序。
在此,采用切割装置分别进行分离,但是,也可以通过巧克力分断、冲压和冲切来进行。
在此,在分离Cu的图形之后,在分离的并且在里面露出的图形14、30、31、15上形成绝缘被覆膜26,对绝缘被覆膜26进行刻图,以便于露出图3A中用虚线的圆圈所表示的部分。然后,在用箭头表示的部分进行切割,而作为半导体器件10B被切出。
而且,焊锡42可以在切割之前或者切割之后形成。
通过以上的制造方法,焊盘、布线、外部连接电极、散热用的电极、半导体器件被埋入绝缘性树脂,能够实现轻薄短小的组件。
而且,图5~图6所示的绝缘性粘接装置17可以在半导体元件16被分别分离之前的晶片阶段中进行粘贴。即,在晶片的阶段,在晶片的里面形成片状的粘接剂,在切割时,与片一起切断晶片,这样,就不需要如图5的工序中所示的在导电箔40上形成绝缘性粘接装置17的工序。
下面说明通过以上制造方法产生的效果。
第一,导电图形被半腐蚀,成为与导电箔一体被支撑,因此,就不需要在现有技术中用于支撑的基板。
第二,在导电箔上形成被半腐蚀而成为凸部的导电图形,因此,能够实现该导电图形的细微化。这样,能够缩窄宽度、间隔。能够形成平面尺寸更小的组件。
第三,由于通过导电图形、半导体器件、连接装置以及封装材料所构成,就能以最小限度构成,能够大大避免材料的浪费,而实现大幅度抑制成本的轻薄短小的半导体器件。
第四,焊盘、布线、外部连接电极、散热用的电极通过半腐蚀而形成为凸部,个别分离在封装之后进行,因此,不需要拉杆、吊线。这样,在本发明中完全不需要拉杆(吊线)的形成、拉杆(吊线)的切断。
第五,在成为凸部的导电图形买入绝缘性树脂之后,从绝缘性树脂的里面去除导电箔,来分离导电图形,因此,不象现有的引线架那样,需要在引线与引线之间产生的树脂凹部。
第六,半导体器件通过绝缘性粘接装置与散热用的电极固定连接,该散热用的电极从里面露出,因此,能够高效地从本半导体器件的里面释放出由半导体器件所产生的热量。而且,通过在绝缘性粘接装置中混入Si氧化膜和氧化铝等填料,进一步提高了其散热性。而且,如果填料的尺寸是统一的,就能把半导体元件16与导电图形之间的间隙保持为一定。
说明使用金属板23所固定的半导体器件10A、10B和使用其的半导体模块的第五实施例
在图1中表示了该半导体模块(FCA)50。而且,所安装的半导体器件是图2所示的半导体器件10A。
首先,对由柔性片组成的第一支撑部件11进行说明。在此,从下层依次层叠第一PI片51、第一粘接层52、导电图形53、第二粘接层54和第二PI片55。而且,当导电图形为多层时,还要使用粘接层,上与下的导电图形通过通孔电连接。这样,如图1C所示的那样,在该第一支撑部件11上至少形成尽可能使金属板23露出的第一开口部12。
这样,形成第二开口部56,以使导电图形被露出。与该第二开口部56相对应的导电图形32可以全部露出,也可以仅露出连接的部分。例如,可以完全去除第二PI片55、第二粘接层54,也可以如图所示的那样,第二PI片55完全去除,而仅去除第二粘接层54露出的部分。这样,焊锡27不会流动。
本发明的半导体器件,在散热用的电极15的里面粘贴金属板23。而且,本发明的半导体模块,第一支撑部件的里面与金属板23大致成为面位置。
考虑到第一支撑部件11和固定连接板25的厚度,来决定金属板23的厚度。而且,当焊盘14和导电图形32通过焊锡27被固定连接时,从第一开口部12露出的金属板23安装成为与第一支撑部件11的里面实质上成为同一面那样来决定其厚度。这样,能够与第二支撑部件相接触。而且,能够与固定连接板25的某个第二支撑部件相接触而固定连接。
下面具体地说明该连接构造。
第一例是这样的构造:采用Al、不锈钢等轻金属板或者陶瓷基板作为第二支撑部件24,在其上接触与半导体器件10A的里面固定连接的上述金属板23。即,是不通过固定连接板25直接与第二支撑部件24相接触的构造。而且,散热用的电极15与金属板23、金属板23与第二支撑部件24选择焊锡等焊接材料或者***填料的导热性良好的绝缘性粘接装置来进行固定连接。
第二例是这样的构造:采用Al、不锈钢等轻金属板或者陶瓷基板作为第二支撑部件24,在其上形成固定连接板25,来固定连接该固定连接板25和金属板23。
例如,当采用Al作为第二支撑部件24时,固定连接板25最好是Cu。这是因为:由于能够在Al上进行Cu电镀,而能够形成~μm程度的Cu被覆膜。由于是电镀膜,就能紧密焊接到第二支撑部件24上来形成,固定连接板25与第二支撑部件24之间的热阻非常小。
另一方面,Cu的固定连接板25与Al基板可以通过粘接剂进行固定连接,但在此情况下,热阻变大。
当采用陶瓷基板作为第二支撑部件24时,固定连接板25被固定连接到通过导电膏的印刷烧成所形成的电极上。
而且,第二支撑部件24和第一支撑部件11通过第三粘接层57而固定连接。
例如,当第一PI片51为25μm
第二PI片55为25μm
第一~第三粘接层52、54、57为25μm(烧成后)
采用丙烯类的粘接剂作为材料
焊锡27为50μm时,
第一支撑部件11全体的厚度为125μm。这样,考虑到它们的厚度,第一支撑部件11的里面和金属板23的里面成为实质面位置。
而且,第三粘接层57为25μm
采用丙烯类的粘接剂作为材料
这样,如果调整各自的膜厚来进行决定,在第一支撑部件11上固定连接半导体器件10A之后,能够固定连接固定连接板25所形成的第二支撑部件24。
而且,准备第二支撑部件24粘贴到第一支撑部件11上的模块,在形成在该模块上的开口部56上配置半导体器件10A,然后,如果焊锡熔融,就能使焊锡暂时熔融,能够进行不会造成连接不良的固定连接。
这样,能够把从半导体元件16产生的热量通过散热用的电极15、金属板23、固定连接板25释放到第二支撑部件24上。与现有的构造(图15B)相比,大幅度减小了热阻,因此,能够提高半导体元件16的驱动电流、驱动频率。而且,能够在图14所示的致动器107、箱体101的底面或者杆105上安装第二支撑部件24的里面。这样,最终,能够通过该箱体101把半导体器件的热量释放到外部。这样,即使把半导体模块安装在硬盘100中,半导体器件自身不会形成比较高的温度,能够进一步提高作为硬盘100的读写速度。而且,该FCA可以安装在硬盘以外的装置中。在此情况下,第二支撑部件与热阻小的部件相接触。
说明金属板23和散热用的电极15一体形成的半导体器件10C及其半导体模块50A的第六实施例
在图9中表示出这样的构造:散热用的电极15A从焊盘14的里面突出,散热用的电极15与金属板23成为一体的。
首先,用图10、图11来说明其制造方法。而且,由于图4~图7是相同的制造方法,则在此省略其说明。
图10表示在导电箔40上被覆绝缘性树脂13的状态,在与散热用的电极15相对应的部分上被覆光致抗蚀剂PR。如果通过该光致抗蚀剂PR来腐蚀导电箔40,如图11所示的那样,散热用的电极15A能够从从焊盘14的里面突出的构造。而且,可以有选择地形成Ag、Au等导电被覆膜,把其作为掩模,来取代光致抗蚀剂PR。该被覆膜起到防止氧化的膜的作用。
在图1所示的粘贴金属板23的构造中,由于金属板23为125μm左右,非常薄,则其作业性非常差。但是,这样,当形成通过腐蚀而突出的散热用的电极15A时,不需要上述金属板23的粘贴。
如图12所示的那样,在焊盘14、布线30、外部连接电极31被完全分离后,绝缘被覆膜被覆盖,焊锡27所配置的部分被露出。在焊锡被固定连接之后,在用箭头表示的部分进行切割。
这样被分离的半导体器件按图9那样安装在第一支撑部件11上。如上述那样,第二支撑部件24被固定连接。此时,由于散热用的电极15A突出,则能够通过焊锡等来简单地与固定连接板25接合。
说明半导体器件的第六实施例
图13A是本发明的半导体器件的平面图,图13B是与图13A的A-A线相对应的断面图。
本发明是:把第一模垫70A和第二模垫70B实质上配置在同一平面上,在其周围设置焊盘14。该焊盘14的里面原封不动地成为外部连接电极,但是,也可以按图3所示的那样采用再配置用的布线。而且,在第一模垫70A与第二模垫70B之间至少设置一个桥71。
而且,在第一模垫70A上固定连接第一半导体芯片16A,在第二模垫70B上固定连接第二半导体芯片16B,通过金属细线20进行连接。
金属细线具有与焊盘14相连接的第一金属细线20A和与桥71相连接的第二金属细线20B。而且,在半导体芯片的表面上设置多个焊盘19。根据该焊盘的输入输出信号,至少选择一部分焊盘,与此相对应,决定焊盘14的位置和数量。而且,通过第一金属细线20A来连接所选择的半导体芯片上的焊盘19与焊盘14。
另一方面,第一半导体芯片16A与第二半导体芯片16B的连接是:用第二金属细线20B来连接第一半导体芯片16A的焊盘和桥71的一端,通过第二金属细线20B来连接桥71的另一端与第二半导体芯片16B的焊盘。
由于在本构造中设置了桥71,则在第一半导体芯片16A、第二半导体芯片16B侧所连接的金属细线全都可以通过球焊来连接。
如从上述制造方法的说明所看到的那样,对导电箔进行半腐蚀,在完全分离之前,用绝缘性树脂13模铸并进行支撑,因此,完全不会产生桥71的落下、脱离。
如本实施例那样,本发明能够把多个芯片形成一个组件。
前面的实施例考虑到读写放大用IC这样一种情况的散热来说明其构造。但是,在各种装置的情况下,为了提高其特性,可以认为必须考虑多个半导体器件的散热的情况。当然,可以分别进行封装,也可以按图13那样把多个半导体器件形成为一个组件。
当然,当金属板按图1那样与上述模垫70相连接时,可以按图9那样,采用模垫70自身突出的构造。这样,它们被安装到柔性片上,或者被安装到第二支撑部件所安装的柔性片上。
如从上述说明所看到的那样,在本发明中,提供一种半导体器件,在封装里面露出的散热用的电极上固定连接金属板,金属板从外部连接电极或者焊盘的里面突出,由此,具有向FCA安装容易的优点。
特别是,FCA设有开口部,该FCA的里面与上述半导体器件的散热用电极成为面位置,因此,具有与第二支撑部件接触容易的特点。
而且,用Al作为第二支撑部件,在此形成由Cu构成的固定连接板,该固定连接板固定连接散热用电极或金属板,由此,从半导体器件产生的热量可以通过第二支撑部件释放到外部。
这样,能够防止半导体器件的温度上升,而体现出接近于本来的能力的性能。特别是,安装在硬盘中的FCA,其热量能够高效地释放到外部,因此,能够提高硬盘的读写速度。
Claims (30)
1.一种半导体器件,用绝缘性树脂一体地封装半导体元件,在其里面,露出与上述半导体元件的焊接电极电连接的焊盘和与上述半导体元件的里面热结合的散热用的电极,其特征在于,
在上述散热用的电极的露出部上设置金属板,以便于从上述焊盘的里面突出。
2.根据权利要求1所述的半导体器件,其特征在于,上述焊盘的里面和上述散热用的电极的里面实质上配置在同一平面上。
3.根据权利要求1或2所述的半导体器件,其特征在于,上述半导体元件和上述散热用的电极用绝缘材料或者导电材料固定连接。
4.根据权利要求3所述的半导体器件,其特征在于,上述散热用的电极和上述金属板用绝缘材料或者导电材料固定连接。
5.根据权利要求3所述的半导体器件,其特征在于,上述散热用的电极和上述金属板用同一材料一体地形成。
6.根据权利要求1至5任一项所述的半导体器件,其特征在于,上述绝缘性树脂的里面从上述焊盘的里面突出。
7.根据权利要求6所述的半导体器件,其特征在于,上述焊盘的侧面和从上述焊盘的侧面延伸的上述绝缘性树脂的里面描绘出同一曲面。
8.一种半导体模块,具有:
设有导电图形的第一支撑部件;
半导体器件,用绝缘性树脂一体地封装与上述导电图形电连接的半导体元件,在其里面,露出与上述半导体元件的焊接电极电连接的焊盘和与上述半导体元件的里面热结合的散热用的电极,其特征在于,
把设在上述第一支撑部件上的导电图形与上述焊盘进行电连接,在与上述散热用的电极相对应的上述第一支撑部件上设有开口部,在上述开口部中设置与上述散热用的电极固定连接的金属板。
9.根据权利要求8所述的半导体模块,其特征在于,在上述第一支撑部件的里面粘贴上述金属板所固定连接的第二支撑部件。
10.根据权利要求8或9所述的半导体模块,其特征在于,上述散热用的电极和上述金属板用同一材料一体地形成。
11.根据权利要求9或10所述的半导体模块,其特征在于,在与上述金属板相对应的上述第二支撑部件上设置由导电材料构成的固定连接板,把上述固定连接板与上述金属板进行热结合。
12.根据权利要求11所述的半导体模块,其特征在于,上述金属板把Cu作为主要材料,上述第二支撑部件把Al作为主要材料,上述固定连接板由把在上述第二支撑部件上所形成的Cu作为主要材料的镀膜组成。
13.根据权利要求8至12任一项所述的半导体模块,其特征在于,上述绝缘性树脂的里面从上述焊盘的里面突出。
14.根据权利要求3所述的半导体模块,其特征在于,上述焊盘的侧面和从上述焊盘的侧面延伸的上述绝缘性树脂的里面描绘出同一曲面。
15.根据权利要求1至14任一项所述的半导体模块,其特征在于,上述半导体元件是硬盘的读写放大用IC。
16.一种半导体器件,用绝缘性树脂一体地封装半导体元件,在其里面,露出与上述半导体元件的焊接电极电连接的焊盘、通过与上述焊盘一体的布线而延伸的外部连接电极、与上述半导体元件的里面热结合的散热用的电极,其特征在于,
在上述散热用的电极的露出部上设置金属板,以便于从上述外部连接电极的里面突出。
17.根据权利要求16所述的半导体器件,其特征在于,上述外部连接电极的里面和上述散热用的电极的里面实质上配置在同一平面上。
18.根据权利要求16或17所述的半导体器件,其特征在于,上述半导体元件和上述散热用的电极用绝缘材料或者导电材料固定连接。
19.根据权利要求18所述的半导体器件,其特征在于,上述散热用的电极和上述金属板用绝缘材料或者导电材料固定连接。
20.根据权利要求18所述的半导体器件,其特征在于,上述散热用的电极和上述金属板用同一材料一体地形成。
21.根据权利要求16至20任一项所述的半导体器件,其特征在于,上述绝缘性树脂的里面从上述外部连接电极的里面突出。
22.根据权利要求21所述的半导体器件,其特征在于,上述外部连接电极的侧面和从上述外部连接电极的侧面延伸的上述绝缘材料的里面描绘出同一曲面。
23.一种半导体模块,具有:
设有导电图形的第一支撑部件;
半导体器件,用绝缘性树脂一体地封装与上述导电图形电连接的半导体元件,在其里面,露出与上述半导体元件的焊接电极电连接的焊盘、通过与上述焊盘一体的布线而设置的外部连接电极、与上述半导体元件的里面热结合的散热用的电极,其特征在于,
把设在上述第一支撑部件上的导电图形与上述外部连接电极进行电连接,在与上述散热用的电极相对应的上述第一支撑部件上设有开口部,在上述开口部中设置与上述散热用的电极固定连接的金属板。
24.根据权利要求23所述的半导体模块,其特征在于,在上述第一支撑部件的里面粘贴上述金属板所固定连接的第二支撑部件。
25.根据权利要求23或24所述的半导体模块,其特征在于,上述散热用的电极和上述金属板用同一材料一体地形成。
26.根据权利要求24或25所述的半导体模块,其特征在于,在与上述金属板相对应的上述第二支撑部件上设置由导电材料构成的固定连接板,把上述固定连接板与上述金属板进行热结合。
27.根据权利要求26所述的半导体模块,其特征在于,上述金属板把Cu作为主要材料,上述第二支撑部件把Al作为主要材料,上述固定连接板由把在上述第二支撑部件上所形成的Cu作为主要材料的镀膜组成。
28.根据权利要求23至27任一项所述的半导体模块,其特征在于,上述绝缘性粘接装置的里面从上述外部连接电极的里面突出。
29.根据权利要求28所述的半导体模块,其特征在于,上述外部连接电极的侧面和与上述外部连接电极焊接的上述绝缘性粘接装置的里面描绘出同一曲面。
30.根据权利要求16至29任一项所述的半导体模块,其特征在于,上述半导体元件是硬盘的读写放大用IC。
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CN100376030C (zh) * | 2002-12-20 | 2008-03-19 | 三洋电机株式会社 | 电路装置及其制造方法 |
CN102907183A (zh) * | 2010-03-16 | 2013-01-30 | 爱普施泰因箔片股份有限公司 | 用于led的镀层*** |
CN113745202A (zh) * | 2021-06-04 | 2021-12-03 | 荣耀终端有限公司 | 封装模组及其制作方法、电子设备 |
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CN100376030C (zh) * | 2002-12-20 | 2008-03-19 | 三洋电机株式会社 | 电路装置及其制造方法 |
CN102907183A (zh) * | 2010-03-16 | 2013-01-30 | 爱普施泰因箔片股份有限公司 | 用于led的镀层*** |
CN102907183B (zh) * | 2010-03-16 | 2016-03-02 | 爱普施泰因箔片股份有限公司 | 用于led的镀层*** |
CN113745202A (zh) * | 2021-06-04 | 2021-12-03 | 荣耀终端有限公司 | 封装模组及其制作方法、电子设备 |
WO2022252888A1 (zh) * | 2021-06-04 | 2022-12-08 | 荣耀终端有限公司 | 封装模组及其制作方法、电子设备 |
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TW497371B (en) | 2002-08-01 |
US20030011058A1 (en) | 2003-01-16 |
EP1195813A2 (en) | 2002-04-10 |
KR20020027148A (ko) | 2002-04-13 |
EP1195813A3 (en) | 2005-01-05 |
US20020041012A1 (en) | 2002-04-11 |
US6501162B2 (en) | 2002-12-31 |
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