CN1270363C - 电子元件模块和电磁可读数据载体的制造方法 - Google Patents

电子元件模块和电磁可读数据载体的制造方法 Download PDF

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Publication number
CN1270363C
CN1270363C CNB2003101237872A CN200310123787A CN1270363C CN 1270363 C CN1270363 C CN 1270363C CN B2003101237872 A CNB2003101237872 A CN B2003101237872A CN 200310123787 A CN200310123787 A CN 200310123787A CN 1270363 C CN1270363 C CN 1270363C
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resin film
pin
thermosetting resin
thermoplastic resin
electronic component
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CN1521821A (zh
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川井若浩
佐藤宪章
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Omron Corp
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Omron Corp
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    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49855Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
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    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
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Abstract

本发明涉及电子元件模块和电磁可读数据载体的制造方法。使用超声波将半导体载体芯片的引脚加热至高温,从上面按压到布线板上,这样就使半导体载体芯片的引脚穿透热塑性树脂膜和热塑性树脂膜,从而将引脚的顶端部分绑定到电极区上。其中的布线板包括:布线图,用于在所述的布线图上覆盖电极区并分布和包括有绝缘粒子的热固性树脂膜,以及覆盖所述的热固性树脂膜的热塑性树脂膜。

Description

电子元件模块和电磁可读数据载体的制造方法
发明领域
本发明涉及一种用于制造适合于制造电磁可读数据载体的电子元件模块的方法,这种载体可用作为航空标签、物理分布式管理标签或无人售票入场券等。或者更确切地说,本发明涉及一种用于制造电子元件模块的方法,这种模块通过低成本的倒装晶片连接方法,将半导体载体芯片封装在布线板上,并且有可能防止由于半导体载体芯片和电极区在布线板上发生接触而短路,甚至在对半导体载体芯片的封装部分施以高温和高压的情况下。
背景技术
所谓的“航空标签”,是指为人们所熟知的这种电磁可读数据载体。预计这种航空标签在不远的将来,可作为顾客行李管理的一种有用方式。如果为世界级航空公司,则该公司的标签月需求量将达到8,500,000个之多。因此,希望建立起大规模生产技术,以较低的成本来生产这种航空标签。
例如,人们知道的航空标签,它由用作天线线圈的涡导模式、用作发送/接收电路的IC卡器件、以及置于矩形PET膜衬底表面的存储器组成。在这种航空标签中,容纳着用作天线线圈的涡导模式的航空标签主体是由有选择地蚀刻附于PET膜表面的铜箔或铝箔来形成的。因此,依靠众所周知的照相平版技术,继以湿式蚀刻处理,通过这种持续的形成处理,就可以容易地实现基于RTR(卷式,Roll to Roll)的流水生产线。另一方面,封装在航空标签主体中的用作发送/接收电路的电路器件和存储器通过使用半导体集成技术(例如,参见专利文档1)构造在一个芯片上。
本申请人之前曾提出一种将组成发送/接收电路的半导体载体芯片和存储器事先封装在膜状绝缘晶片(一种布线板)上来制作模块的技术。这种电子元件模块绑定在组成航空标签主体的PET膜上,以提高航空标签的生产力(参见专利文档2)。
针对如绑定在航空标签上的电子元件模块等要求有较高薄度的电子器件安装片,提出了多种关于直接将半导体载体芯片置于布线板之上所使用的倒装晶片连接方法的建议。
图17示出了倒装晶片连接方法的一个例子(以下称其为现有技术的方法一)。在方法一中,事先在半导体载体芯片的底部电极(图中未示出)上形成作连接用的突出端子b(称其为引脚(bump))。引脚b和电极区(预定连接引脚b的区域)在布线板c的布线图上排成一列,并由诸如焊料或导电糊等绑定材料e将它们连接起来。
方法一有如下若干问题:(1)在布线图上用于连接引脚b和电极区d的绑定材料e的补给和固化过程比较复杂;(2)用于在芯片a和布线板c之间填充绝缘树脂f(叫做里层填料(under-fill))和熔接引脚连接头的过程需要引脚连接头具有一定的湿度电阻;以及(3)需要以里层填料的方式填充和固化绝缘树脂f这一过程,因此增加了制造成本。
图18示出了倒装晶片连接方法的另一个例子(以下称其为现有技术的方法二)。方法二解决了方法一存在的问题。方法二涉及使用各向异性导电片将半导体载体芯片封装在布线板上。在方法二中,各向异性导电片g有导电粒子分布和包括于热塑性树脂或热固性树脂中,各向异性导电片g插于半导体载体芯片a和布线板c之间。导电粒子h在厚度方向上通过流动树脂的热压绑定实现布线图上的引脚b和电极区d之间的电子连接(例如,参见专利文档3)。
在方法二中,在将半导体封装到布线板上时,与布线图不是严格对齐的。树脂的固化时间很短,约10~20秒。不需要使用诸如里层填料等密封剂。因此减少了制造成本。另一方面,该方法也仍然存在一些问题:(1)各向异性导电片g比较贵;(2)为了阻止热阻较小的布线板,需要200℃以上的温度来固化;(3)需要10~20秒的时间来固化树脂材料,虽然这一时间相对较短,目前难以简化和加快这一过程;以及(4)在引脚和布线图之间的电子连接是由分布和包括于树脂材料中的导电粒子的接触来完成的,连接的可靠性较差。
因此,本申请人提出了一种倒装晶片连接方法(以下称其为现有技术的方法三)。图19A~19C示出了基于方法三的倒装晶片连接方法。在方法三中,由半导体引脚b形成的半导体载体芯片封装于与布线板c相连接的倒装晶片上,在布线板c上有布线图,其上有电极区d,并且热塑性树脂膜(粘性膜)i覆盖在电极区d上。
更确切地说,有一个用于定位载体芯片一端(引脚b)和布线板c(电极区d)的处理过程(定位过程)(图19A),一个在使用加热板对热塑性树脂膜i进行加热的情况下,当对引脚b施以超声波时,通过给导电载体芯片一个向下(图19B所示的箭头方向)的压力以部分地推挤熔化的热塑性树脂膜i,以便使引脚b和电极区d发生接触的处理过程(热塑性树脂膜的去除过程)(图19B),一个在引脚b和电极区d相接触的情况下,通过进一步持续地施加超声波以对引脚b和电极区d进行超声绑定(金属熔化)的处理过程(超声绑定过程)(图19C),以及一个通过冷却和固化熔化的热塑性树脂膜i来将半导体载体芯片主体绑定在布线板上的处理过程(图中未示出)(参见专利文档4)。
使用方法三,在一两秒钟之内可以完成包括熔化热塑性树脂膜i,通过对引脚b应用超声波来绑定引脚b和电极区d,以及固化(冷却和固化)热塑性树脂膜i在内的一系列封装处理,因此缩短了制造时间。由于在引脚b和电极区d之间使用的是金属熔化绑定,因此具有可靠的电子连接。
不过,现有的方法三存在如下问题。
图20A至20B示出了一个用于制造数据载体中所包含的卡片和令牌的方法例子,其中的数据载体放置有半导体载体芯片。图20A示出了一种通过层压来生产数据载体中所包含的卡片的方法。图20B示出了一种通过注模来生产数据载体中所包含的令牌的方法。更确切地说,使用如图20A所示的生产方法,放置有半导体载体芯片j的数据载体主体k被夹在两个树脂膜1和1之间,并且在该状态下被两个加热到约120℃的金属板m和m以100~200kg/cm2的压强竖向压紧,以将两个膜1-1和数据载体紧密绑定在一起,这样就生产出了包含于数据载体中的卡片。使用如图20B所示的生产方法,放置有半导体载体芯片j的数据载体主体k被置于模具n的内腔中的预定位置,并且在该状态下通过模具n的树脂入口孔p以40~80kg/mm2的压强向内注入250℃的树脂,这样就生产出了包含于数据载体中的令牌。
也就是说,在使用现有的方法三所制造的电子元件模型中,由于半导体载体芯片a和电极区d之间的绝缘只是用热塑性树脂膜i来实现的,如图21A所示,如果将诸如层压和注模等生产中需要的高温负载应用到半导体载体芯片a的封装部分,则在有些情况下就可能会使热塑性树脂膜i熔化。在这种情况下,如果在如图21B中的箭头所示的方向上施以高压,则电极区d和布线板c将会被部分弯曲。然后,半导体载体芯片a将被掩埋到热塑性树脂膜i中,导致发生不一致性,致使半导体载体芯片a和电极区d因发生接触而短路。
[文档1]
JP-A-6-243358
[文档2]
JP-A-11-176022
[文档3]
日本专利号2586154
[文档4]
JP-A-11-333409
发明内容
本发明的一个目标是提出一种用于制造电子元件模块的方法,这种模块通过电子和机械上可靠的工艺,以及较低的成本,快速地将半导体载体芯片封装在布线板上,并且有可能避免因半导体载体芯片和电极区在布线板上发生接触而短路,甚至在对半导体载体芯片的封装部分施以高温和高压的情况下。
本发明的另一个目标是提供一种适合于这种电子元件模块制造方法的连接布线板的倒装晶片。
本发明的进一步目标是提供一种制造这种连接布线板的倒装晶片的方法,它使得这种布线板的生产简单而且成本低。
而且,本发明的另外一个目标是提出一种利用连接布线板的倒装晶片以低成本和大规模生产的方式来制造电磁可读数据载体的方法,这种电磁可读数据载体可用作为航空标签,物理分布式管理标签或无人售票入场券等。
对于那些阅读了下面的实施例的本领域普通技术人员来说,本发明的其他目标和作用将是显而易见的。
本发明提出一种通过在布线板上封装半导体载体芯片来制造电子元件模块的方法,其中所述的方法包括:
(a)准备包括布线图的所述布线板,热固性树脂膜在所述的布线图上覆盖电极区并且分布和包括有绝缘粒子,以及热塑性树脂膜覆盖所述的热固性树脂膜;
(b)当使用超声波时,在所述的热塑性树脂膜被加热和被软化的熔化状态下,将半导体载体芯片的引脚按压到热塑性树脂膜上,以便熔化的热塑性树脂膜被所述的半导体载体芯片引脚推挤掉,以及所述的引脚抵达所述的热固性树脂膜的表面;
(c)通过对所述的引脚持续地使用超声波,将所述的引脚压到所述的热固性树脂膜上,以便所述的绝缘粒子在热固性树脂膜中分离,热固性树脂膜被所述的引脚推掉,并且所述的引脚与所述的电极区相接触;
(d)在所述的引脚和所述的电极区相接触的情况下,通过对所述的引脚持续地使用超声波,来超声绑定所述的引脚和所述的电极区;以及
(e)通过冷却和固化所述的熔化的热塑性树脂,将半导体载体芯片主体绑定在所述的布线板上。
从步骤(a)中可以清楚地看出,本发明使用了在布线板的布线图的电极区上预先形成的分布和包括有绝缘粒子的热固性树脂膜。而且,热塑性树脂膜是在热固性树脂膜之上形成的。热固性树脂膜可以只覆盖布线图的电极区,或者布线图的整个表面。
这里所使用的“电极区”指的是布线图上的特定小区域,包括用于电子器件端子连接的预定位置。这个电极区包括一般被称为布线图地带的那部分。
这里所使用的“被加热和被软化”指的是热塑性树脂膜在一定程度上被加热和被软化的状态,以及它被加热和熔化的状态。而且,这里所使用的“热塑性树脂”具有像粘胶一样可取的优良特性。
“分布和包括”指的是至少在电极区(热固性树脂膜中的引脚预定***区)附近可以存在预定数量的绝缘粒子。进而,绝缘粒子可以均一地存在于热固性树脂膜的整个区域。绝缘粒子可以均一地分布和包括于热固性树脂膜中。进而,在热固性树脂膜中可以通过引脚的绝缘振动将绝缘粒子包括进来并使它们相互分离,并且在热固性树脂膜中产生多个小孔。也就是说,由于在热固性树脂膜中产生多个小孔,热固性树脂膜易碎不耐用,因此引脚能够容易地穿透热固性树脂膜。
“在热固性树脂膜中将绝缘粒子相分离”在这里既包括将绝缘粒子与热固性树脂膜充分分离的情况,也包括绝缘粒子从热固性树脂膜中部分地突出的情况。
根据本发明,这种制造电子元件模块的方法具有如下优点:(1)由于通过超声绑定使引脚和电极区易受扩散结的影响,因此可以确保电传导;(2)由于在引脚和电极区之间的结合部分是由树脂密封的,所以有优良的耐湿性能;(3)由于热塑性树脂膜固化时将半导体载体芯片和布线板绑定在一起,所以机械封装抗张力强度高;(4)电传导和机械连接在短时间内同时进行;(5)由于不需要任何特定的密封和绑定处理以及绑定材料,因此制造成本非常低;以及(6)由于布线板表面的裸露部分不存在热塑性树脂膜,因此在加热时,衬底表面可以不具有所需的粘度大小。
尽管如上述(1)至(6)各种优势的获得在很大程度上是由于有覆盖热固性树脂膜的热塑性树脂膜的存在,不过,通过本发明人前面提出的现有技术方法三(JP-A-11-333409)也能获得上述优势。也就是说,本发明的突出特点是,作为上述(1)至(6)各种优势的补充,根据本发明用于制造电子元件模块的方法还具有如下几种优势。
(7)在根据本发明所制造的电子元件模块中,由于在半导体载体芯片和电极区(布线图)之间***了在高温情况下一般不会熔化的热固性树脂膜,因此热固性树脂膜的存在使得半导体载体芯片和布线图不会发生直接接触,如前面参考附图21A~21B所作的讲述,即使向半导体载体芯片的封装部分施加了高温和高压,如前面参考附图20A所作的讲述。因此能够制造出高可靠的和不用担心发生短路的电子元件模块。
(8)由于热固性树脂膜分布和包含有绝缘粒子,因此去除热固性树脂膜以便将引脚***到热固性树脂膜中这一过程,只涉及通过对引脚施加超声振动以便将引脚按压在热固性树脂膜上。例如,为了防止发生短路,考虑热塑性树脂膜和布线图之间不包含绝缘粒子的绝缘膜(绝缘层)的情况,则只靠引脚的超声振动不会很容易地***绝缘层(部分的去除)。另一方面,本发明中通过引脚地超声振动将绝缘粒子与热固性树脂膜分离开来,以便能够在热固性树脂层中产生小孔,脆化树脂层,以便能够让引脚在短时间内轻易地穿透热固性树脂层并使引脚的前端部分抵达电极区。
进而,本发明提出了一种连接包括布线图的布线板的倒装晶片,热固性树脂膜在布线图上覆盖电极区并分布和包括有绝缘粒子,以及热塑性树脂膜覆盖热固性树脂膜。
使用这种连接布线板的倒装晶片,只需要提供具有预定引脚的半导体载体芯片,就能够通过超声封装轻易地将半导体载体芯片安装在布线板上。并且因此得到了具有上述(1)~(6)各项优势的优良的电子元件模块。
为了制造出这种连接布线板的倒装晶片,在通过蚀刻过程形成布线图时,最好使用分布和包括有绝缘粒子的热固性树脂膜作为蚀刻掩模,而且热固性树脂膜上面用热塑性树脂膜来覆盖。
使用这种制造方法,避免了对防蚀涂层的推挤这一典型处理,因此制造过程得到简化。而且,防蚀涂层在布线图表面可以作为绝缘保护层。
进而,本发明提出了一种用于制造包括有数据载体主体和电子元件模块在内的电磁可读数据载体的方法,其中所述的数据载体主体容纳有组成膜上天线的导线图,所述的电子元件模块中的半导体载体芯片具有发射/接收电路和存储器,封装在所述的膜、薄片或薄板状布线板的布线图上,所述的方法包括电子元件模块的制造方法,该电子元件模块的制造方法包括如下步骤:
(a)准备具有所述布线图的所述膜、薄片或薄板状布线板,热固性树脂膜在所述的布线图上覆盖电极区并且分布和包括有绝缘粒子,以及热塑性树脂膜覆盖所述的热固性树脂膜;
(b)当使用超声波时,在所述的热塑性树脂膜被加热和被软化的熔化状态下,将半导体载体芯片的引脚按压到热塑性树脂膜上,以便熔化的热塑性树脂膜被所述的半导体载体芯片引脚推挤掉,以及所述的引脚抵达所述的热固性树脂膜的表面;
(c)通过对所述的引脚持续地使用超声波,将所述的引脚压到所述的热固性树脂膜上,以便所述的绝缘粒子在热固性树脂膜中分离,热固性树脂膜被所述的引脚推掉,并且所述的引脚与所述的电极区相接触;
(d)在所述的引脚和所述的电极区相接触的情况下,通过对所述的引脚持续地使用超声波,来超声绑定所述的引脚和所述的电极区;以及
(e)通过冷却和固化所述的熔化的热塑性树脂,将半导体载体芯片主体绑定在所述的布线板上。
由于电子元件模块的制造方法具有上述(1)~(8)各项优势,通过这种构造就可以大规模地生产出高性能的电磁可读数据载体,可用作航空标签、物理分布式管理标签或无人售票入场券等。
优先地,本发明提出了一种用于制造包括有数据载体主体和电子元件模块在内的电磁可读数据载体的方法,其中所述的数据载体主体容纳有金属图,在膜状树脂衬底上由天线线圈组成,所述的电子元件模块中的半导体载体芯片由发射/接收电路和存储器组成,封装在膜状树脂衬底表面的铝箔布线图上,所述的方法包括生产电子元件模块这一步骤,其中在电子元件模块中,半导体载体芯片被封装在膜状树脂衬底表面的铝箔布线图上,所述的步骤进一步包括:(a)准备具有铝箔布线图的布线板,热固性树脂膜在铝箔布线图上覆盖电极区并且分布和包括有绝缘粒子,以及热塑性树脂膜覆盖热固性树脂膜;(b)在热塑性树脂膜被加热和被软化的熔化状态,施加超声波将半导体载体芯片的引脚按压到热塑性树脂膜上,并且让引脚推挤掉熔化的热塑性树脂膜并抵达热固性树脂膜表面;(c)对引脚进一步持续施加超声波以将引脚按压到热固性树脂膜上,使绝缘粒子与热固性树脂膜相分离,并且让引脚推掉热固性树脂膜并与电极区相接触;(d)在引脚和电极区相接触的情况下,进一步持续地施加超声波,以便将引脚和电极区超声绑定起来;以及(e)通过冷却和固化熔化的热塑性树脂膜,将半导体载体芯片主体绑定到布线板上。
据发明者所知,目前已证实如果以上述方式在电子元件模块的一面用铝箔作为布线图,则蚀刻过程和上述过程(d)中的超声绑定就会变得比较容易,并且比使用其他金属成本要低。
在本发明中作为“绝缘粒子”材料的可以是硅氧化物、铝氧化物或四氟乙烯。从耐压方面来看,硅氧化物或铝氧化物由于是具有相对较高硬度的无机氧化物,因而更为可取。不过,由于铝氧化物具有较高的介电常数,因此在不宜使用任何电容器元件的半导体载体芯片中,硅氧化物更为可取。在根据使用需要切掉布线板时,如果热固性树脂膜中包括有诸如硅氧化物或铝氧化物等坚硬的氧化物粒子时,就会有缩短切割刀使用寿命的风险。在这种情况下,四氟乙烯由于相对较软,因而更为可取。
本发明中的优选情况下,在热固性树脂膜中,绝缘粒子的重量要占到树脂100%重量(100wt%)中的10~30wt%。这是经过仔细研究的结果。已经发现引脚很难穿透热低于10wt%的固性树脂膜(例如,半导体载体芯片和电极区之间的电子连接),而树脂的可使用性被认为在大于30%时降低。
本发明中,绝缘粒子的直径最好在热固性树脂膜厚度的70%以上。这是因为当绝缘粒子直径较大时,树脂中所产生的用以分离绝缘粒子和热固性树脂膜的小孔会更大些,使得引脚的***更为容易。
附图说明
图1A~1F为处理过程视图,图示了符合本发明的电子元件模块制造方法;
图2A~2C为解释性视图,图示了超声封装处理过程;
图3A~3C为解释性视图,图示了超声封装处理的细节;
图4A~4C为解释性视图,图示了超声封装处理的细节;
图5为一个横截面视图,图示了符合本发明的电子元件模块结构;
图6A~6B为两个图表,示出了符合本发明的电子元件模块中的半导体载体芯片的绑定力和短路故障的发生比率;
图7A~7B为两个图表,示出了符合本发明的电子元件模块中的半导体载体芯片的绑定失败的发生比率;
图8为一个视图,图示了一个数据载体的例子;
图9为封装于数据载体之上的电子元件模块的横截面视图;
图10A~10E图示了数据载体主体的制造过程;
图11A~11G图示了置于数据载体之上的电子元件模块的制造过程;
图12A~12B为处理过程视图,图示了数据载体主体上的电子元件模块的封装过程。
图13为一个横截面视图,图示了电子元件模块封装结构的另一个例子;
图14A~14C图示了数据载体主体的另一个制造过程;
图15A~15F图示了置于数据载体之上的电子元件模块的另一个制造过程;
图16A~16B为处理过程视图,图示了数据载体主体上的电子元件模块的另一个封装过程。
图17中图示了现有技术中用于倒装晶片连接的方法一;
图18中图示了现有技术中用于倒装晶片连接的方法二;
图19A~19C图示了现有技术中用于倒装晶片连接的方法三;
图20A~20B图示了方法三中对数据载体包装产品进行处理的例子;
图21A~21B图示了一个与方法三有关的问题。
具体实施方式
[实施例]
下面将参考附图讲述根据本发明的优选实施例用于制造电子元件模块的方法。下面的实施例只是本发明的一部分,而本发明的范围可以是权利要求说明中所定义的任何内容。
本实施例涉及制造电子元件模块的方法,在电子元件模块中有半导体载体芯片封装于布线板上,所述的方法包括:
准备包括有布线图的所述的布线板,热固性树脂膜在所述的布线图上覆盖电极区并分布和包括有绝缘粒子,以及热塑性树脂膜覆盖所述的热固性树脂膜;
当使用超声波时,在所述的热塑性树脂膜被加热和被软化的熔化状态下,将半导体载体芯片的引脚按压到热塑性树脂膜上,以便熔化的热塑性树脂膜被所述的半导体载体芯片引脚推挤掉,以及所述的引脚抵达所述的热固性树脂膜的表面;
通过对所述的引脚持续地使用超声波,将所述的引脚按压到所述的热固性树脂膜上,以便所述的绝缘粒子与热固性树脂膜相分离,热固性树脂膜被所述的引脚推掉,以及所述的引脚与所述的电极区相接触;
在所述的引脚和所述的电极区相接触的情况下,通过对所述的引脚持续地使用超声波,来超声绑定所述的引脚和所述的电极区;以及
通过冷却和固化所述的熔化的热塑性树脂,将半导体载体芯片主体绑定在所述的布线板上。
图1A~1F为处理过程视图,图示了本制造方法的系列处理。这一系列处理包括金属箔层叠板制造过程(图1A),蚀刻掩模印刷过程(图1B),布线图的蚀刻处理形成过程(图1C),热塑性树脂膜形成过程(图1D),超声封装过程(图1E),以及绑定过程(图1F)。下面将讲述每一个处理过程的细节。
金属箔层叠板制造过程
在该过程中,制造了作为膜状布线板的基元的Al-PET薄板1。这个Al-PET薄板1的制造是通过在25μm厚的PET膜2的一面(图中的上表面)上用聚氨酯粘胶放置一个35μm厚的硬铝箔3,并且在150℃和5kg/cm2的条件下对其进行加热碾薄和绑定来进行的。
蚀刻掩模印刷过程
在该过程中,具有所需的布线图形状的防蚀涂层图是在Al-PET薄板1中的硬铝箔3的表面上形成的。在这个例子中,抗蚀图的形成是作为环氧热固性树脂膜4,在它里面分布有SiO2粒子(绝缘粒子),这些粒子在图1B~1F中以“·”来表示。更确切地说,通过在Al-PET薄板1上以凹版印刷的方式涂上一层墨水,并且在130~200℃的温度下放置20~60秒钟使墨水变干,这种环氧热固性树脂膜(防蚀涂层图)4的形成厚度约为4~6μm,其中这种墨水包括100份重的环氧树脂和30份重的直径为3~4μm的SiO2粒子,二者混合到一种由30%的甲苯,6.1%的甲乙酮和12%的丁基溶纤剂组成的溶剂中。
蚀刻处理过程
在该过程中,通过蚀刻将从热固性树脂膜(防蚀涂层图)4中裸露出的铝箔部分5去除,大家都知道这会形成包括硬铝箔3在内的布线图6。本例中,布线图6是通过在50℃的温度下,以NaOH(120g/l)作为蚀刻剂,浸蘸从热固性树脂膜4中裸露出的铝箔部分5而形成的。因此,在布线板的表面上,硬铝箔3所包括的布线图出现了通过这种蚀刻处理所得到的未完工产品。布线图6的表面完全为用作防蚀涂层图(蚀刻掩模)的环氧热固性树脂膜4所覆盖。也就是说,至少布线图6的电极区(预定与半导体载体芯片的引脚相连接的区域)表面为热固性树脂膜4所覆盖。热固性树脂膜4的覆盖厚度根据引脚大小和安装的载体芯片的形状而有调整。
热塑性树脂膜形成过程
在该过程中,作为粘胶层的热塑性树脂膜7形成于作为防蚀涂层图的热固性树脂膜4的整个表面。热塑性树脂膜7是通过凹版印刷的方式,将聚烯烃热塑性树脂粘胶在约90~100℃的温度和4~6μm的厚度情况下覆盖和熔化在热固性树脂膜4的表面而形成的。也就是说,热固性树脂膜4完全为热塑性树脂膜7所覆盖。因此,就完成了连接布线板(用于封装半导体载体芯片的布线板)8的倒装晶片。热塑性树脂膜7的覆盖厚度根据引脚大小和安装的载体芯片的形状而有调整。
超声封装过程
在该过程中,半导体载体芯片9是通过使用超声波在布线板8上封装的。这一过程包括的步骤一,是在热塑性树脂膜7被加热和被软化的熔化状态下,使用超声波将半导体载体芯片9的引脚10按压到热塑性树脂膜7上,并且用引脚10推去熔化的热塑性树脂膜7和抵达热固性树脂膜4的表面;步骤二,是通过对引脚10进一步持续使用超声波,将引脚10按压到热固性树脂膜4上,以将绝缘粒子从热固性树脂膜4中分离开来,并且用引脚10推去熔化的热固性树脂膜4并与电极区11发生接触;以及步骤三,是在引脚10和电极区11相接触的状态下,通过进一步持续使用超声波将引脚10和电极区11超声绑定在一起。
在本例中,半导体载体芯片厚度为150μm,并且是作为所谓的表面封装元件,其中的引脚10从它的底层表面伸出,作为用于连接的金属端子。引脚10是镀金的,高14μmm,宽80μmm(80×80μmm)。
超声封装过程的细节如图2A~2C所示。在步骤一中,在使用超声振动的情况下,引脚10被按压到在150℃的温度下被加热和被熔化的热塑性树脂膜7上。然后,由于引脚10的超声振动,熔化的热塑性树脂膜7被部分地从引脚10的前端推掉,如图2A所示,以便引脚10抵达分布和包括的有SiO2热固性树脂膜4的表面。在步骤二,在超声振动被进一步施加于引脚10的情况下,引脚10被按压到热固性树脂膜4上。然后,以“·”表示的SiO2粒子被引脚10从热固性树脂膜4中清除干净(分离),以便在热固性树脂膜4中形成以“O”表示的小孔,如图2B所示。SiO2粒子从热固性树脂膜4中分离出来后,可以被热塑性树脂膜7所吸收(蔓延)。由于小孔的产生,热固性树脂膜4会更加脆化不耐用,因此引脚10能够轻易地推去(部分地除去)热固性树脂膜4,抵达铝箔布线图6的表面(电极区11)。此时,在铝箔布线图6表面的氧化层是通过引脚10的超声振动被机械式清除的。结果,引脚10和电极区11发生接触。在步骤三,如图2C所示,布线图6的引脚10和电极区11被引脚的超声振动产生的摩擦热所加热,因此形成了包含有铝箔中的金原子的金属熔合部分,完成了对二者的超声绑定。
当半导体载体芯片9被置于预定位置后,完成超声封装过程中的步骤一至步骤三所需施加的超声振动的频率为63KHz,负荷压强为0.2kg/mm2,持续时间1.5秒。
有关超声封装过程的细节如图3A~3C和图4A~4C所示。图3A~3C为处理过程视图,解释了步骤一的细节,图4A~4C也为处理过程视图,解释了步骤二和步骤三的细节。
下面将参考图3A~3C,讲述步骤一的细节。在布置步骤,即封装准备阶段,具有真空吸收特性的超声探头12和加热板/砧13竖向相对放置,如图3A所示,其中的超声探头12吸引和固定着载体芯片9,如图3A中的箭头12a所示,并且加热板/砧13吸引和固定着布线板8,如图3A中的箭头13a所示。在该状态下,超声探头12和加热板/砧13载水平向相对移动,将载体芯片9上的引脚10定位在布线板8上的布线图6的电极区11上,而与此同时,使用加热板和砧13将布线板8加热到150℃。
在如图3B所示的对热塑性树脂膜的部分清除过程中,当使用超声探头12和加热板和砧13施加如箭头V所示的超声振动(63.5KHz,2W)时,在如箭头P所示的负荷压强(0.1~0.3Kgf)和热塑性树脂膜7被加热和被软化的状态下,载体芯片的引脚10被按压到热塑性树脂膜7上。这样,热塑性树脂膜7就被部分推挤(清除)掉,以便能够埋住热塑性树脂膜7中的引脚10的前端部分,使引脚10的前端部分接触(抵达)热固性树脂膜4的表面,如图3C所示。
下面将参考图4A~4C,详细讲述步骤二和步骤三。接触(抵达)热固性树脂膜4的表面的引脚10不断地受到超声振动(63.5KHz,2W),如图4A中的箭头V所示,以及负荷压强(0.1~0.3Kgf),如图4A中的箭头P所示。这样,SiO2粒子在热固性树脂膜4中被分开,并且热固性树脂膜被推掉(参见图4B),使得引脚10接触到(抵达)电极区11(铝箔布线图6的表面),如前所述。在接下来的超声绑定步骤中(参见图4C),通过进一步持续施加超声振动V,在引脚10和电极区之间的金属间扩散结就会发展,这样就实现了对引脚10和电极区11的超声绑定。
回到图1E继续讲解。
绑定过程
在该过程中,在不对布线板8加热到150℃以绑定半导体载体芯片9的主体和布线图6的情况下,可以通过自然冷却或强制冷却的方式来固化熔化的热塑性树脂膜7。也就是说,插在半导体载体芯片9的底面和布线图8之间的熔化的热塑性树脂膜7得到冷却和固化,因此半导体载体芯片9和布线图8就被坚固地绑定到一起。
图5为一个横截面视图,图示了通过如图1A~1E所示的上述处理而得到的电子元件模块结构。这种制造电子元件模块的方法具有的优势如下:(1)由于通过超声绑定在引脚10和电极区11之间容易形成扩散结,因此电传导得以实现;(2)由于引脚10和电极区11之间的扩散结部分用树脂密封,因此防潮性能优良;(3)由于热塑性树脂膜7固化时将半导体载体芯片9和布线板8绑定在一起,所以机械封装的抗张力强度高;(4)电传导和机械连接在短时间内同时进行;(5)由于不需要任何特定的密封和绑定处理以及绑定材料,因此制造成本非常低;以及(6)由于布线板表面的裸露部分不存在热塑性树脂膜,因此在加热时,衬底表面可以不具有所需的粘度大小。
尽管如上述(1)至(6)各种优势的获得在很大程度上是由于热塑性树脂膜7的存在,不过,通过本发明人前面提出的现有方法三(JP-A-11-333409)也能获得上述优势。也就是说,本发明的突出特点是,作为上述(1)至(6)各种优势的补充,根据本发明实施例的用于制造电子元件模块的方法还具有如下几种优势。
(7)在根据本发明所制造的电子元件模块中,由于在半导体载体芯片9和铝箔布线图6之间***了在高温(本例中为150~250℃这一范围)情况下不会熔化的热固性树脂膜4,因此热固性树脂膜4的存在使得半导体载体芯片9和铝箔布线图6不会发生接触,如前面参考附图21A~21B所作的讲述,即使向半导体的封装部分施加了高温和高压,如前面参考附图20所作的讲述。因此能够制造出高可靠的和不用担心发生短路的电子元件模块。
(8)由于在制造电子元件模块过程中形成的热固性树脂膜4分布和包含有SiO2粒子,因此部分去除热固性树脂膜4以便将引脚10***到热固性树脂膜4中这一过程,只涉及通过对引脚10施加超声振动以便将引脚10按压在热固性树脂膜4上。例如,为了防止发生短路,考虑热塑性树脂膜7和铝箔布线图6之间为不包含诸如SiO2粒子等绝缘粒子的绝缘膜(绝缘层)的情况,则只靠引脚10的超声振动不会很容易地除去绝缘层。另一方面,在上述实施例中,通过引脚10的超声振动将绝缘粒子(SiO2粒子)与热固性树脂膜4分离开来,以便能够在热固性树脂层4中产生小孔,脆化树脂层4,以便能够让引脚10在短时间(约1秒钟)内轻易地穿透热固性树脂层4并使引脚10的前端部分抵达铝箔布线图6(电极区)。
图6A示出了根据本实施例所制造的电子元件模块中的半导体载体芯片9和布线图6之间的绑定强度,与只利用超声绑定的情况相对照。从图6A中明显可以看出,当适用本发明提出的制造电子元件模块的方法时,电子元件模块的绑定强度约为只使用超声绑定获得的绑定强度的7倍(5.6~8.5倍)。这在很大程度上应归功于这样一个事实,即当热塑性树脂膜7固化时,半导体载体芯片9和布线板8被绑定在一起,而热固性树脂膜4的存在也有贡献于此。
当在150℃的温度和2Kg/cm2的压强下经受层压处理时,根据现有技术的方法三制造的电子元件模块(指不分布和包括有SiO2粒子的热固性树脂膜4的那种电子元件模块)的短路故障发生率,以及根据本实施例而制造的电子元件模块的短路故障发生率如图6B所示。如图6B所示,利用现有的方法三时,一个故障发生比率为100个测试对象模块中有5个(5%),而在本实施例中则没有短路故障发生(短路故障发生率为0%)。因此,根据本实施例就能够获得完全能够经受得住高温和高压处理的电子元件模块。
本实施例在热塑性树脂膜7和铝箔布线板6之间使用热固性树脂膜4(其中分布和包括有SiO2粒子的绝缘层)作为绝缘层,这种情况下的半导体载体芯片绑定失败发生率,与用没有SiO2粒子分布的热固性树脂膜作为绝缘层情况下的半导体载体芯片绑定失败发生率如图7A所示。从图7A中明显可以看出,在使用分布和包括有SiO2粒子(没有SiO2粒子:失败发生率为96%;有SiO2粒子:失败发生率为0%)的热固性树脂膜4的情况下,可允许通过对引脚10施加超声波来将半导体载体芯片9封装到布线板8上。
在上述实施例中,半导体载体芯片绑定失败发生率随着分布和包括于热固性树脂膜4中的SiO2粒子的直径大小差异而有所不同,如图7B所示。如图7B所示,当SiO2粒子的直径为1~2μmm(约为热固性树脂膜4的厚度(4~6μmm)的30%)时,绑定失败发生率为50%。另一方面,当SiO2粒子的直径为3~4μmm(约为热固性树脂膜4的厚度(4~6μmm)的70%)时,绑定失败发生率为0。据此可以发现,SiO2粒子的直径优选为热固性树脂膜4的厚度的70%。
在上述实施例中,使用了作为组成薄板1的树脂基层材料的PET膜,不过,可以用聚酰亚胺膜代替PET膜。
在上述实施例中,为了得到热固性树脂膜4,使用了在100份重量的环氧树脂中掺有30份重量SiO2粒子组成的墨水。不过,作为精确研究的结果,本发明人发现对半导体载体芯片的超声封装处理已经非常成熟,只要环氧树脂和SiO2粒子的混合比例为10~30份重量的SiO2粒子对100份重量的环氧树脂。
在上述实施例中,使用了SiO2(硅)作为绝缘粒子的材料分布和包括于热固性树脂膜4中,不过,也可以使用AlO3(铝氧化物)或四氟乙烯。换句话说,根据使用目的,当需要切割布线板8时,如果在热固性树脂膜4中包含有诸如SiO2或AlO3粒子等坚硬的氧化物粒子,一般会担心这样会缩短切割刀的使用寿命。在这种情况下,最好使用相对较软的四氟乙烯。
在上述实施例中,使用了热固性树脂膜4作为热塑性树脂膜7和铝箔布线板6之间的绝缘层。不过,绝缘层也可以是热塑性树脂膜(例如,在如图20A~20B所示的层压或注模过程所需的高温下,即使热塑性树脂膜7被熔化,它也能够保持固化状态),它的再软化点要比热塑性树脂膜7的高。当然,在这种情况下,绝缘层中包含有SiO2粒子(绝缘粒子)。这种情况下的布线板一般称为倒装晶片连接半导体芯片,其组成包括:布线图,在布线图上覆盖电极区并分布和包括有绝缘粒子的第一层热塑性树脂膜,以及覆盖第一层热塑性树脂膜的第二层热塑性树脂膜,其中第一层热塑性树脂膜的再软化点要比第二层热塑性树脂膜的高。另一方面,该实施例中的布线板8一般称为连接布线板的倒装晶片,其组成包括:布线图6,在布线图6上覆盖电极区11的热固性树脂膜4,以及覆盖热固性树脂膜4的热塑性树脂膜7。通过超声波能够轻易地以较低的成本将带有引脚的半导体载体芯片9封装到布线板上,这样就得到了绑定强度较高并且可靠性高和基本不会造成短路的电子元件模块,即使在此过程中施加了高温和高压的负荷。
如图1B,1C和1D所示的制造布线板的方法,一般称为制造连接布线板的倒装晶片的方法,其中在通过蚀刻处理形成布线图的过程中使用了分布和包括有绝缘粒子的热固性树脂以作为蚀刻掩模,并且热固性树脂上覆盖热塑性树脂。以这种组成结构,在蚀刻过程中用于形成布线图的蚀刻掩模直接成为组成连接布线板的倒装晶片的热固性树脂膜,这样在不需去除蚀刻掩模的情况下就生成了布线板,问题少,成本低。
下面将参考图8~12,讲述根据本发明的一个实施例来制造数据载体的方法。该数据载体为电磁可读的,可用作航空标签,物理分布管理标签,或无人售票入场券等。完整的数据载体包括:数据载体主体,用于容纳由在膜状树脂衬底上的天线线圈组成的金属图,以及电子元件模块,用于容纳由封装在膜状树脂衬底表面上的铝箔布线图中的发射/接收电路和存储器组成的金属图。
图8示出了符合该实施例的数据载体的一个例子。如图8所示,数据载体DC包括:数据载体主体100,其中容纳有10μm厚的铜箔涡导图(对应于天线线圈),位于25μm厚的PET(聚对苯二甲酸乙二醇酯)基板101的一侧,以及电子元件模块200,其中有封装于70μm厚玻璃环氧晶片201下侧的半导体载体芯片202。电子元件模块200置于数据载体主体100上,这样玻璃环氧晶片201将跨过(或横过)组成涡导图的环绕导线匝102a,其中在涡导图102中使用内圈终端焊盘103和外圈终端焊盘104,因此形成了与涡导图102的电子连接。
图9为封装于数据载体之上的电子元件模块200(在图8中沿13-13方向的横截面视图)结构的放大了的横截面视图。下面将接着讲述如图8和图9所示的制造数据载体主体100和电子元件模块200的方法。
图10A~10E示出了由天线线圈组成的涡导图102的制造过程的一个例子。下面将参考图10A~10E来讲述作为天线线圈的涡导图102在PET膜基板101的一侧上形成的过程。
首先,准备Cu-PET薄基板301,如图10A所示。作为一个例子,通过使用氨基甲酸酯粘胶在25μm厚的PET膜302的一侧铺上10μm厚的铜箔303,并且在150℃和5kg/cm2压强下经过加热层压和绑定,就得到了Cu-PET薄基板301。
涡状的防蚀涂层图304是在Cu-PET薄板301上的铜箔303的表面上形成的,如图10B所示。也就是说,通过胶印将绝缘的防蚀涂层墨水印刷在具有作为线圈特性的L值和Q值,线宽,间距,以及内、外周等一圈圈数字的涡状的铜箔303上。这时,可以使用热能射线或活性能量射束使防蚀墨水固化。活性能量射束为紫外线或电子束,并且当使用紫外线时,在防蚀墨水中混合进了光聚作用试剂。
如图10C所示,在Cu-PET薄板301中的铜箔303表面上与电子器件模块200的电极进行电传导连接,通过导电墨水形成了具有所需电极形状的导电防蚀涂层图305a和305b(图8中的103、104)。防蚀涂层图305a和305b是通过胶印来形成的,与前一个处理过程一样,并且防蚀墨水可以是在120℃温度下进行约20分钟的热处理后固化而成的热固性导电胶。在该处理过程中,一般使用丝网印刷的方式来进行导电墨水的印刷,并且墨水材料可以是Ag粒子和热塑性粘胶的混合物,包含有光聚作用试剂或焊料膏。
如图10D所示,通过蚀刻将从防蚀涂层图304、305a和305b裸露出来的铜箔部分306去除掉,众所周知,这样形成了用作天线线圈的涡导图(图8中的102),在这个蚀刻过程中,用FeCl2(120g/l)作为蚀刻剂在温度为50℃时将铜箔303去除掉。然后,一般情况下无法将电子器件封装到电路上,即由天线线圈组成的涡导图上,除非去除掉在处理过程B中形成的防蚀涂层。不过,在本发明中存在如处理过程C所述的导电防蚀图305a和305b,因此不需要通过在这些防蚀图上封装电子器件来除去防蚀涂层。也就是说,本发明省去了剥掉防蚀涂层的过程,因此通过绝缘墨水形成的防蚀涂层304在铜箔电路图上起到保护层的作用。
如图10E所示,在本实施例中,用于***电子元件模块的凸起部分(图9中的灌注部分413)的通孔307是以按压方式工作的。在上述方式中,作为天线线圈的涡导图308(102)固定于PET膜基板302(101)的一侧,这样就完成了数据载体主体100。
图11A~11G示出了电子元件模块200的制造过程的一个例子。前面已经注意到,通过这种制造过程获得的电子元件模块200与如图1F所示的电子元件模块的结构几乎完全相同,只是半导体芯片202是通过灌注部分413(参见图11G)进行树脂密封的,并且导电防蚀涂层置于电极部分412,用于与数据载体主体100相连接。
金属箔层叠板制造过程
作为膜状布线板基元的Al-PET薄板401的制造如图11A所示。Al-PET薄板401是通过用聚氨酯粘胶在25μm厚的PET膜402的一侧(图中的上表面)铺上35μm厚的硬铝箔403,并且在150℃和5kg/cm2压强的条件下经过加热层压和绑定制造而成的。
蚀刻掩模印刷过程
如图11B所示,用于形成具有所需布线图形状的防蚀涂层图的第一层防蚀层,是在Al-PET薄板401中的硬铝箔403的表面形成的。在该实例中,形成的第一层防蚀层是作为有以图中的“·”来表示的SiO2粒子(绝缘粒子)分布于其中的环氧热固性树脂膜404而使用的。更确切地说,通过在Al-PET薄板1上以凹版印刷的方式涂上一层墨水,并且在130~200℃的温度下放置20~60秒钟使墨水变干,环氧热塑性树脂膜(第一层防蚀层)404的形成厚度约为4~6μm,其中这种墨水包含100份重量的环氧树脂和30份重量的直径为3~4μm的SiO2粒子,二者混合到一种由30%的甲苯,6.1%的甲乙酮和12%的丁基溶纤剂组成的溶剂中。在此过程中,用于形成具有所需布线板形状的防蚀涂层图的热固性导电粘胶被覆盖于硬铝箔403左右两端的405a和405b的表面上,如图11B所示。下面将要讲述其中的细节。
蚀刻掩模印刷过程
如图11C所示,作为第二层防蚀层(作为粘胶层)的热塑性树脂膜406是在作为第一层防蚀层的热固性树脂膜404的整个表面上形成的。热塑性树脂膜406的形成是通过在热固性树脂膜404上以凹版印刷的方式铺上一层约4~6μm厚的在约90~100℃的温度下熔化的聚烯烃热塑性树脂粘胶制造而成的。也就是说,热固性树脂膜404的表面完全为热塑性树脂膜406所覆盖。
蚀刻掩模印刷过程
如图11D所示,导电防蚀层(导电防蚀区)407a和407b是在硬铝箔层403左右两端的405a和405b的表面上形成的。导电防蚀层407对应于与数据载体100的终端焊盘部分305a和305b相连接的部分。导电防蚀区407a和407b的形成是通过胶印来完成的,如前一个过程一样,并且防蚀墨水可以是在120℃温度下进行约20分钟的热处理后固化而成的热固性导电胶。在该处理过程中,一般使用丝网印刷的方式来进行导电墨水的印刷,并且墨水材料可以是Ag粒子和热塑性粘胶的混合物,包含有光聚作用试剂或焊料膏。
包括热固性树脂膜404,热塑性树脂膜406,以及导电防蚀区407a和407b在内的具有所需布线图形状的防蚀涂层图,是在硬铝箔403上通过上述处理而形成的,如图11B至11D所示。
蚀刻处理
如图11E所示,通过蚀刻将从防蚀涂层图408中裸露出来的铜箔部分409去除掉,众所周知,会形成有硬铝箔403包含在内的布线图410。布线图410是通过在50℃的温度下,以NaOH(120g/l)作为蚀刻剂,浸蘸从防蚀涂层图中裸露出的铝箔部分409而形成的。因此,包含硬铝箔403的布线图410出现在布线板411的表面上。
超声封装处理过程
如图11F所示,使用超声波将半导体载体芯片202封装在布线板411上。这一过程包括:步骤一,是在热塑性树脂膜406被加热和被软化的熔化状态下,使用超声波将半导体载体芯片202的引脚203按压到热塑性树脂膜406上,并且用引脚203推去熔化的热塑性树脂膜406和抵达热固性树脂膜404的表面;步骤二,是通过对引脚203进一步持续使用超声波,将引脚203按压到热固性树脂膜404上,以将SiO2粒子从热固性树脂膜404中分离开来,并且用引脚203推去熔化的热固性树脂膜404并与硬铝箔403上的电极区412发生接触;以及步骤三,是在引脚203和电极区412相接触的状态下,通过进一步持续使用超声波将引脚203和电极区412超声绑定在一起。
在本例中,半导体载体芯片202厚度为150μm,并且是作为所谓的表面封装元件,其中的引脚203从它的底层表面伸出,作为用于连接的金属端子。引脚203是镀金的,高14μmm,宽80μmm(80×80μmm)。在步骤一中,在使用超声振动的情况下,引脚203被按压到在150℃的温度下被加热和被熔化的热塑性树脂膜406上。然后,由于引脚203的超声振动,熔化的热塑性树脂膜406被部分地从引脚203的前端推掉,以便引脚203抵达分布和包括有SiO2的热固性树脂膜404的表面。在步骤二,在超声振动被进一步施加于引脚203的情况下,引脚203被按压到热固性树脂膜404上。然后,以“·”表示的SiO2粒子被引脚203从热固性树脂膜404中清除干净(分离),以便在热固性树脂膜404中形成以“O”表示的小孔。SiO2粒子从热固性树脂膜404中分离出来后,可以被熔化的热塑性树脂膜406所吸收(蔓延)。由于小孔的产生,热固性树脂膜404会更加脆化不耐用,因此引脚203能够轻易地推去(部分地除去)热固性树脂膜404,抵达铝箔布线图410的表面(电极区412)。此时,在铝箔布线图410表面的氧化层是通过引脚203的超声振动被机械式清除的。结果,引脚203和电极区412发生接触。在步骤三,布线图410的引脚203和电极区412被引脚的超声振动产生的摩擦热所加热,因此形成了包含有铝箔中的金原子的金属熔合部分,完成了对二者的超声绑定。
当半导体载体芯片202被置于预定位置后,完成超声封装过程中的步骤一至步骤三所需施加的超声振动的频率为63KHz,负荷压强为0.2kg/mm2,持续时间约1.5秒。
绑定过程
如图11G所示,在不对布线板411加热到150℃以绑定半导体载体芯片202的主体和布线图410的情况下,可以通过自然冷却或强制冷却的方式来固化熔化的热塑性树脂膜406。也就是说,插在半导体载体芯片202的底面和布线板411之间的熔化的热塑性树脂膜406得到冷却和固化,因此半导体载体芯片202和布线板411就被坚固地绑定到一起。之后,根据需要使用众所周知的方法来对半导体载体芯片202进行树脂密封,以形成灌注部分413。
下面将参考图12A~12B来讲述一个过程,该过程将电子元件模块200置于数据载体主体100上,以便绝缘晶片201跨过(或横过)组成涡导图的环绕导线匝102a,并且分别在涡导图102中的内、外侧形成与涡导图102的电子连接。
如图12A所示,电子元件模块200置于数据载体主体100上,这样电子元件模块200的电子器件安装面就与数据载体主体100的导电图形成面相对,并且电子元件模块200跨过(或横过)组成涡导图102的环绕导线匝102a。此时,在数据载体主体100的侧面开放的小孔307中容纳了覆盖作为电子元件的载体芯片202的灌注部分413。而且,在电子元件模块200的一侧作为一对铝箔区410和410的电极区并且连接到半导体载体芯片202的引脚203和203的导电防蚀区407a和407b,直接置于数据载体主体100一侧的一对导电防蚀涂层图305a和305b上。也就是说,电子元件模块200上的铝箔区410和410,与数据载体主体100一侧的一对导电防蚀涂层图305a和305b面对着面,中间分别隔着导电防蚀区407a和407b。
如图12B所示,将温度加热到160℃的凿齿器501a和501b以21.7kg的压强大小按压到电子元件模块200上,特别是直接按压到导电防蚀涂层图305a和305b上持续20秒钟。此时,热塑性粘胶膜的导电防蚀图将局部得到加热和软化,以便传导到电子元件模块200的端子区410和410的导电防蚀区407a和407b,与数据载体主体100上的一对导电防蚀涂层图305a和305b能够绑定在一起并得到保护。另一方面,热塑性树脂膜406的一部分被绝缘,并被用于绑定电子元件模块200和数据载体主体100。而且,由于涡导图102表面上的防蚀涂层304仍然是绝缘材料,所以电子元件模块200的绝缘基片402(201)上的布线图(图中未示出)是作为跨接元件与涡导图102的内、外圈相连。因此,不需要使用在现有结构中所使用的跨接元件和回接布线图,就能够实现涡导图102与半导体载体芯片202之间的电子连接。
下面将参考图13~16,讲述根据本发明的一个实施例来制造数据载体的方法。该数据载体为电磁可读的,可用作航空标签,物理分布管理标签,或无人售票入场券等。完整的数据载体包括:数据载体主体,用于容纳由在膜状树脂衬底上的天线线圈组成的金属图,以及电子元件模块,用于容纳由封装在膜状树脂衬底表面上的铝箔布线图中的发射/接收电路和存储器组成的半导体载体芯片。
图13为一放大了的横截面视图,示出了电子元件模块的封装结构的一个例子(对应于图8中沿13-13方向的横截面视图)。下面将接着讲述如图13所示的制造数据载体主体和电子元件模块的方法。
图14示出了由天线线圈组成的涡导图102(图8)的制造过程的一个例子。下面将参考图14来讲述作为天线线圈的涡导图102在PET膜基板101(图8)的一侧上形成的过程。
首先,准备Cu-PET薄基板601,如图14A所示。作为一个例子,通过使用氨基甲酸酯粘胶在25μm厚的PET膜的一侧铺上10μm厚的铜箔603,并且在150℃和5kg/cm2压强下经过加热层压和绑定,就得到了Cu-PET薄基板601。这样,就完成了Cu-PET薄板601的制造,在Cu-PET薄板601中,铜钵603粘附于PET膜602(101)的表面。
涡状的防蚀涂层图604是在Cu-PET薄板601的铜箔603的表面上形成的,如图14B所示。也就是说,通过胶印将绝缘的防蚀涂层墨水印刷在具有作为线圈特性的L值和Q值,线宽,间距,以及内、外周等一圈圈数字的涡状的铜箔603上。这时,可以使用热能射线或活性能量射束使防蚀墨水固化。活性能量射束为紫外线或电子束,并且当使用紫外线时,在防蚀墨水中混合进了光聚作用试剂。
如图14C所示,通过蚀刻将从经由上述处理而形成的防蚀涂层图604中裸露出来的铜箔部分603a去除掉,众所周知,这样形成了用作天线线圈和内、外圈接线焊盘606a、606b的涡导图605。在这个蚀刻过程中,用FeCl2(120g/l)作为蚀刻剂,根据需要在温度为50℃时将铜箔部分去除掉。
然后,一般情况下无法将电子器件封装到电路上,即线圈上,除非去除掉在如图14B所示的处理过程中形成的防蚀涂层604。不过在本发明中,由于在绑定中,绑定规划部分606a和606b上的防蚀涂层是通过使用超声波而产生的机械摩擦来去除的(参见图13),因此不需要除去防蚀涂层604。也就是说,本发明省去了剥掉防蚀涂层的过程,因此防蚀涂层604在铜箔电路图605的表面上起到保护层的作用。
图15A~15F示出了电子元件模块200的制造过程的一个例子。前面已经注意到,电子元件模块200的这种制造过程与如图1A~1F所示的制造过程本质上是等价的,只是半导体芯片是通过灌注部分进行树脂密封的。因此,尽管解释是重复的,但是为了谨慎起见,再一次讲述了同样的部分。
金属箔层叠板制造过程
作为膜状布线板基元的Al-PET薄板701的制造如图15A所示。Al-PET薄板701是通过用聚氨酯粘胶在25μm厚的PET膜702的一侧(图中的上表面)铺上35μm厚的硬铝箔703,并且在150℃和5kg/cm2压强的条件下经过加热层压和绑定制造而成的。
蚀刻掩模印刷过程
如图15B所示,具有所需布线图形状的防蚀涂层图是在Al-PET薄板701中的硬铝箔703的表面上形成的。在该实例中,形成的防蚀涂层图是作为有以图15B中的“·”来表示的SiO2粒子(绝缘粒子)分布于其中的环氧热固性树脂膜704而使用的。更确切地说,通过在Al-PET薄板701的表面上以凹版印刷的方式涂上一层墨水,并且在130~200℃的温度下放置20~60秒钟使墨水变干,环氧热塑性树脂膜(防蚀涂层图)704的形成厚度约为4~6μm,其中这种墨水包含100份重量的环氧树脂和30份重量的直径为3~4μm的SiO2粒子,二者混合到一种由30%的甲苯,6.1%的甲乙酮和12%的丁基溶纤剂组成的溶剂中。
蚀刻处理
如图14C所示,通过蚀刻将从热塑性树脂膜(防蚀涂层图)704中裸露出来的铜箔部分705去除掉,众所周知,会形成有硬铝箔703包含在内的布线图706。本实例中,布线图706是通过在50℃的温度下,以NaOH(120g/l)作为蚀刻剂,浸蘸从热塑性树脂膜704中裸露出的铝箔部分705而形成的。这样,包含硬铝箔703的布线图706就出现于通过这种蚀刻处理而得到的布线板中间产品708a的表面上。而且布线图706的表面完全为用作防蚀涂层图(蚀刻掩模)的环氧热固性树脂膜704所覆盖。也就是说,至少布线图706的电极区(预定与半导体载体芯片的引脚相连接的区域)表面为热固性树脂膜704所覆盖。热固性树脂膜704的覆盖厚度根据引脚大小和安装的载体芯片的形状而有调整。
热塑性树脂膜形成过程
如图15D所示,作为粘胶层的热塑性树脂膜707成于作为防蚀涂层图的热固性树脂膜704的整个表面。热塑性树脂膜707是通过凹版印刷的方式,将聚烯烃热塑性树脂粘胶在约90~100℃的温度和4~6μm的厚度情况下覆盖和熔化在热固性树脂膜704的表面而形成的。也就是说,热固性树脂膜704的表面完全为热塑性树脂膜707所覆盖。因此,就完成了连接布线板的倒装晶片(用于封装半导体载体芯片的布线板)708。热塑性树脂膜707的覆盖厚度根据引脚大小和安装的载体芯片的形状而有调整。
如图15E所示,半导体载体芯片709是通过使用超声波在布线板708上封装的。这一过程包括步骤一,即在热塑性树脂膜707被加热和被软化的熔化状态下,使用超声波将半导体载体芯片709的引脚710按压到热塑性树脂膜707上,并且用引脚710推去熔化的热塑性树脂膜707和抵达热固性树脂膜704的表面;步骤二,即通过对引脚710进一步持续使用超声波,将引脚710按压到热固性树脂膜704上,以将SiO2粒子从热固性树脂膜704中分离开来,并且用引脚710推去熔化的热固性树脂膜704并与电极区711发生接触;以及步骤三,即在引脚710和电极区711相接触的状态下,通过进一步持续使用超声波将引脚710和电极区711超声绑定在一起。
在本例中,半导体载体芯片709厚度为150μm,并且是作为所谓的表面封装元件,其中的引脚710从它的底层表面伸出,作为用于连接的金属端子。引脚710是镀金的,高14μmm,宽80μmm(80×80μmm)。在步骤一中,在使用超声振动的情况下,引脚710被按压到在150℃的温度下被加热和被熔化的热塑性树脂膜707上。然后,由于引脚710的超声振动,熔化的热塑性树脂膜707被部分地从引脚710的前端推掉,以便引脚710抵达分布和包括有SiO2的热固性树脂膜704的表面。在步骤二,在超声振动被进一步施加于引脚710的情况下,引脚710被按压到热固性树脂膜704上。然后,以“·”表示的SiO2粒子被引脚710从热固性树脂膜704中清除干净(分离),以便在热固性树脂膜704中形成以“O”表示的小孔。SiO2粒子从热固性树脂膜704中分离出来后,可以被熔化的热塑性树脂膜707所吸收(蔓延)。由于小孔的产生,热固性树脂膜704会更加脆化不耐用,因此引脚710能够轻易地推去(部分地除去)热固性树脂膜704,抵达铝箔布线图706的表面(电极区711)。此时,在铝箔布线图706表面的氧化层是通过引脚710的超声振动被机械式清除的。结果,引脚710和电极区711发生接触。在步骤三,布线图706的引脚710和电极区711被引脚的超声振动产生的摩擦热所加热,因此形成了包含有铝箔中的金原子的金属熔合部分,完成了对二者的超声绑定。
当半导体载体芯片202被置于预定位置后,完成超声封装过程中的步骤一至步骤三所需施加的超声振动的频率为63KHz,负荷压强为0.2kg/mm2,持续时间1.5秒。
绑定过程
如图15F所示,在不对布线板708加热到150℃以绑定半导体载体芯片709的主体和布线图706的情况下,可以通过自然冷却或强制冷却的方式来固化熔化的热塑性树脂膜707。也就是说,插在半导体载体芯片709的底面和布线板708之间的熔化的热塑性树脂膜707得到冷却和固化,因此半导体载体芯片709和布线板708就被坚固地绑定到一起。之后,根据需要使用众所周知的方法来对半导体载体芯片709进行树脂密封,以形成灌注部分712。通过这种方式,就制成了电子元件模块700。
下面将参考图16A~16B来讲述将电子元件模块封装于数据载体上以形成与天线线圈的电子连接这一过程。这一处理过程使用了超声焊接技术。
如图16A所示,电子元件模块700置于数据载体主体607上,这样在电子元件模块一侧的绑定规划部分713a和713b就将与作为数据载体主体一侧的绑定规划部分的端子焊盘606a和606b相对齐。
如图16B所示,使用频率为V(40kHz)的超声振动,将一对凿齿器801和802一齐落下,直接压在电子元件模块700的绑定规划部分712a和713b上,压强大小为P(0.2kg/mm2),持续时间为T(0.5秒钟)。在图16中,标号803和804表示与凿齿器801和802相对的砧。
一般地,当原子之间的距离(几个埃的长度)足以在两个要结合在一起的金属表面产生引力作用以及整个表面的原子全部相互接触时,焊接才得以成功。不过,由于金属表面覆盖有氧化物和吸附气体等一层薄的表层,机床上的净金属原子无法充分接触以产生最大的绑定强度。
因此,通过上述超声绑定方法所产生的超声振动,可以除去金属表层(在该例中,包括713a、713b、606a和606b),并且通过激活原子振动使原子得到扩散,这样就可以安全可靠地将电子元件模块700的端子和数据载体的端子绑定在一起。也就是说,与电子元件模块700的引脚710存在电子连接的热固性树脂膜704(图13中的两个终端部分)和位于数据载体端子部分(图8中的103和104)的铜箔部分603焊接在一起,如图13所示。
这一方法基于超声绑定的原理,其中金属表层是通过超声振动除去的。即使如图14B所示的处理过程是在没有剥落作为绝缘防蚀涂层的导电图接线焊盘606a、606b的情况下进行的,但是同样获得了电子元件模块700和数据载体主体607之间的全部电子的和机械的绑定特性。通过上述处理,就得到了符合本发明的膜状数据载体DC(参见图8)。
在上述实施例中,当通过调整对凿齿器801和802的按压时间产生出对应于突出部分的金属塑性流动时,会在与凿齿器801和802相对的砧803和804的端面上产生出大量位于熔合部分上的凸起和凹陷部分,这样正对着金属层清除部分的树脂层会因超声振动而熔化。特别是当金属熔化和树脂熔化同时进行时,电子元件模块的机械绑定强度将大大增加,因此当可以对诸如航空标签或物理分布式管理标签等各种数据载体进行大致粗暴的处理时,该实施例是有效的。
通过这种方式所得到的膜状数据载体应用了基于电磁场原理的读取介质,因此能够在相距100甚至1000mm的情况下可靠地读取存储于半导体中的数据,而不会受到读取距离或方向上的限制,特别是在定向性读取方面。
[本发明的效果]
通过上面的讲述明显可以看出,本发明提出了用于制造电子元件模块的方法,其中半导体载体芯片被以电子的和机械的可靠方式和较低的成本快速地封装到布线板上,并且可以避免因布线板上的半导体载体芯片和电极区之间的接触而发生短路,即使是在对半导体载体芯片的封装部分施以高温和高压夫在的情况下。
本发明提出了以低成本和大规模的方式来制造电磁可读数据载体的方法,其中电磁可读数据载体可以用在航空标签、物理分布式管理标签或无人售票入场券等许多方面。

Claims (5)

1.一种制造电子元件模块的方法,其中在电子元件模块中具有封装于布线板上的半导体载体芯片,所述的方法包括:
(a)准备包括布线图的所述布线板,热固性树脂膜在所述的布线图上覆盖电极区并且分布有绝缘粒子,以及热塑性树脂膜覆盖所述的热固性树脂膜;
(b)当使用超声波时,在所述的热塑性树脂膜被加热和被软化的熔化状态下,将半导体载体芯片的引脚按压到热塑性树脂膜上,以便熔化的热塑性树脂膜被所述的半导体载体芯片引脚推挤掉,以及所述的引脚抵达所述的热固性树脂膜的表面;
(c)通过对所述的引脚持续地使用超声波,将所述的引脚压到所述的热固性树脂膜上,以便所述的绝缘粒子在热固性树脂膜中分离,热固性树脂膜被所述的引脚推掉,并且所述的引脚与所述的电极区相接触;
(d)在所述的引脚和所述的电极区相接触的情况下,通过对所述的引脚持续地使用超声波,来超声绑定所述的引脚和所述的电极区;以及
(e)通过冷却和固化所述的熔化的热塑性树脂,将半导体载体芯片主体绑定在所述的布线板上。
2.一种用于倒装晶片连接的布线板,包括:
布线图;
在所述的布线图上覆盖电极区并分布有绝缘粒子的热固性树脂膜;以及
覆盖所述的热固性树脂膜的热塑性树脂膜。
3.一种制造用于倒装晶片连接的布线板的方法,包括如下步骤:
准备膜状布线板的基元;在所述的基元上层压金属箔;以及
在所述金属箔上形成分布有绝缘粒子的热固性树脂,使用所述热固性树脂作为掩模对所述金属箔进行蚀刻而形成所需的布线图,并且在所述热固性树脂上覆盖热塑性树脂。
4.一种用于制造包括有数据载体主体和电子元件模块在内的电磁可读数据载体的方法,其中所述的数据载体主体容纳有组成膜上天线的导线图,所述的电子元件模块中的半导体载体芯片具有发射/接收电路和存储器,封装在膜、薄片或薄板状布线板的布线图上,所述的方法包括电子元件模块的制造方法,该电子元件模块的制造方法包括如下步骤:
(a)准备具有所述布线图的所述膜、薄片或薄板状布线板,热固性树脂膜在所述的布线图上覆盖电极区并且分布有绝缘粒子,以及热塑性树脂膜覆盖所述的热固性树脂膜;
(b)当使用超声波时,在所述的热塑性树脂膜被加热和被软化的熔化状态下,将半导体载体芯片的引脚按压到热塑性树脂膜上,以便熔化的热塑性树脂膜被所述的半导体载体芯片引脚推挤掉,以及所述的引脚抵达所述的热固性树脂膜的表面;
(c)通过对所述的引脚持续地使用超声波,将所述的引脚压到所述的热固性树脂膜上,以便所述的绝缘粒子在热固性树脂膜中分离,热固性树脂膜被所述的引脚推掉,并且所述的引脚与所述的电极区相接触;
(d)在所述的引脚和所述的电极区相接触的情况下,通过对所述的引脚持续地使用超声波,来超声绑定所述的引脚和所述的电极区;以及
(e)通过冷却和固化所述的熔化的热塑性树脂,将半导体载体芯片主体绑定在所述的布线板上。
5.一种用于连接倒装晶片的布线板,包括:
布线图;
在所述的布线图上覆盖电极区并分布有绝缘粒子的第一热塑性树脂膜;以及
覆盖所述的第一热塑性树脂膜的第二热塑性树脂膜,
其中所述的第一热塑性树脂膜的再软化温度完全比所述的第二热塑性树脂膜的再软化温度高。
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