CN1348214A - 半导体装置和半导体模块 - Google Patents
半导体装置和半导体模块 Download PDFInfo
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- CN1348214A CN1348214A CN01117311A CN01117311A CN1348214A CN 1348214 A CN1348214 A CN 1348214A CN 01117311 A CN01117311 A CN 01117311A CN 01117311 A CN01117311 A CN 01117311A CN 1348214 A CN1348214 A CN 1348214A
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Abstract
在硬盘中安装有固定粘接了读写放大用IC的FCA,但是,因为读写放大用IC的散热性不好,所以该读写放大用IC的温度上升,读写速度大大降低。而且硬盘本身的特性受大的影响。散热用的电极15露出在绝缘性树脂13的背面,金属板23固定粘接在该散热用的电极15上,该金属板23的背面与柔性片的背面实质上处于同一平面,能够与第二支持件24简单地固定粘接在一起。因此,半导体元件产生的热能够经散热用的电极15、金属板23、第二支持件24良好地散出。
Description
本发明涉及半导体装置和半导体模块,特别是涉及能够良好地放出来自半导体元件的热的结构。
近年来,随着半导体装置用于便携式机器或小型·高密度装配机器,正在谋求轻薄短小而散热性好的半导体装置。但是,半导体装置被装在各种各样的基板上,作为这种基板所包含的半导体模块,则装于各种各样的机器中。基板可以是陶瓷基板、印刷基板、柔性片、金属基板或玻璃基板等,这里,以下描述其一例,作为安装在柔性片上的半导体模块。不言而喻,在本实施例中也能使用这些其它基板。
图17中表示了使用柔性片的半导体模块被安装在硬盘100内的情况。该硬盘100例如被详细描述在“日经ェレクトロニクス1997年6月16日(No.691)P92~”中。
将该硬盘100安装在金属构成的箱体101内,多张记录盘102被一体地装配在主轴电机103上,在各记录盘102的表面上,经很窄的间隙配置有磁头104。该磁头104被安装在固定于臂105的前端的悬臂106的前端部。而且磁头104、悬臂106、臂105构成一体,该一体件被安装在致动器107上。
为了经磁头104进行写入、读出,记录盘102必须与读写放大用IC108电连接,因此,使用在柔性片109上安装了该读写放大用IC108的半导体模块110,最后把设置在柔性片109上的布线电气地连接到磁头104上。该半导体模块110被称之为可弯曲·电路·组件,一般简称为FCA。
在箱体101的背面,露出被装在半导体模块110上的连接器111,该连接器(阳接头或阴接头)与被安装在主板112上的连接器(阴接头或阳接头)连接。在该主板112上,设置有布线,并安装着主轴电机103的驱动用IC、缓冲存储器、其他驱动用的IC、例如ASIC等。
例如:记录盘102经主轴电机103以4500rpm的转速旋转,磁头104用致动器107决定其位置。这种旋转机构被设置在箱体101上的盖体密闭着,所以无论如何热都不流动,而使读写放大用IC108温度上升。因此,读写放大用IC108被安装在致动器107、箱体101等的热传导好的部分上。主轴电机103的旋转有可能达到5400、7200、10000rpm的高速,所以,这种散热尤为重要。
为了进一步说明上述的FCA,把其结构表示于图18上。图18A是平面图,图18B的断面图,是沿A-A线剖切设置在前端的读写放大用IC108的部分的示图。为了把该FCA110被弯折后安装在箱体101内的一部分上,所以采用取容易弯曲加工的平面形状的第一柔性片109。
在该FCA110的左端,安装有连接器111,构成第一连接部。与该连接器111电连接的第一布线121贴合在第一柔性片109上,一直延伸到右端。所述第一布线121与该读写放大用IC108电连接,与磁头104连接的读写放大用IC108的引线122被连接在第二布线123上,该第二布线123与臂105、悬臂106上设置的第二柔性片124上的第三布线126连接。即:第一柔性片109的右端成为第二连接部127,在这里与第二柔性片124相连接。而且,第一柔性片109与第二柔性片124最好一体地设置,这时,第二布线123与第三布线126就被设置为一体。
在设置读写放大用IC108的第一柔性片109的背面上,设置有支持件128。该支持件128使用陶瓷基板、Al基板。经该支持件128与露出在箱体101内部的金属热接合,读写放大用IC108的热经该支持件128散出到外部。
接下来参照图18B,说明读写放大用IC108和第一柔性片109的连接结构。
第一柔性片109从下层开始层叠第一聚酰亚胺片130(下称第一PI片)、第一粘接层131、导电图形132、第二粘接层133和第二聚酰亚胺片134(下称第二PI片),导电图形132被夹在第一、第二聚酰亚胺片130、134之间。
为了连接读写放大用IC108,去掉所要的地方的第二聚酰亚胺片134和第二粘接层133,形成开口部135,使导电图形132从这里露出来。如图所示,经引线122电连接读写放大用IC108。
图18B中,用绝缘性树脂136封装起来的半导体装置沿箭头表示的散热路径向外散热,特别是,绝缘性树脂136成为热阻,总体地看,这是一种不能够高效率地把从读写放大用IC108产生的热散出去的结构。
进一步地用硬盘来说明,求出该硬盘的读写传送速率的500MHz~1GHz以及更高的频率,必须把读写放大用IC108的读写速度作到高速。因此,必须使与读写放大用IC108连接的柔性片上的布线的路径短,而且必须防止读写放大用IC108的温度上升。
特别是因为记录盘102高速旋转而箱体101和盖体构成密闭的空间,所以,内部的温度可上升到70度~80度。另一方面,一般的IC的动作容许温度大约为125度,读写放大用IC108容许从内部温度80度上升大约45度。但是,如图所示,如果半导体装置本身的热阻、FCA的热阻大,读写放大用IC108立刻就会超过动作容许温度,而不能发挥出本来的能力。因此,谋求散热性优良的半导体装置、FCA。
但是,今后动作频率会更加提高,所以,读写放大用IC108本身也会因运算处理产生热而使温度上升。在常温下,即使能够实现所期望的动作频率,在硬盘内部由于温升也必须降低动作频率。
以上,随今后动作频率的增加,半导体装置、半导体模块(FCA)更要谋求其良好的散热性。
另一方面,为减少惯性转矩,致动器107本身以及安装在它上面的臂105、悬臂106和磁头104必须被作得尽可能地轻。特别是,如图17所示,在把读写放大用IC108安装于致动器107表面上的情况下,也要谋求该IC108的轻量化、FCA110的轻量化。
鉴于上述的课题,第1,按照本发明的半导体装置,半导体元件被面朝下与绝缘性树脂封装为一体,在其背面露出与所述半导体元件的焊接电极电连接的垫片和处于所述半导体元件的表面的散热用电极;在所述散热用电极的露出部设置有金属板,使其从所述垫片的背面突出来。
由于该突出的金属板处于面对第一支持件即柔性片背面的位置上,所以金属板能够粘接或接触在框体的内部特别是具有平面的部分、散热板等上。因此,半导体元件的热能够被传导到散热板上。
第2,所述垫片的背面和所述散热用的电极的背面实质上被配置在同一平面上。
第3,所述半导体元件和所述散热用的电极用绝缘材料固定在一起。
第4,所述散热用的电极和所述金属板用绝缘材料或导电材料固定在一起。
第5,所述散热用的电极和所述金属板使用同一材料形成一体。
第6,所述绝缘性树脂的背面从所述垫片的背面突出来。
第7,所述垫片的侧面和从所述垫片的侧面延伸出来的绝缘性树脂的背面呈同一曲面。
第8,一种半导体模块,具有设置了导电图形的第一支持件和半导体装置,所述半导体装置的与所述导电图形电连接的半导体元件被面朝下与绝缘性树脂封装为一体,在其背面露出与所述半导体元件的焊接电极电连接的垫片和处于所述半导体元件的表面的散热用电极;
所述垫片与设置在所述第一支持件的上面的导电图形电连接,在对应于所述散热用电极的所述第一支持件上设置有开口部,在所述开口部设置有与所述散热用电极固定在一起的金属板。
第9,在所述第一支持件的背面粘接着固定着所述金属板的第二支持件。
第10,所述散热用的电极和所述金属板使用同一材料形成一体。
第11,对应于所述金属板的所述第二支持件上设置有由导电材料构成的固定板,所述固定板和所述金属板热接合在一起。
第12,所述金属板由以Cu为主要材料的镀膜构成,所述第二支持件由以Al为主要材料的镀膜构成,所述固定板由形成在所述第二支持件上的以Cu为主要材料的镀膜构成。
第13,所述绝缘性树脂的背面从所述垫片的背面突出来。
第14,所述垫片的侧面和从所述垫片的侧面延伸出来的绝缘性树脂的背面呈同一曲面。
第15,所述半导体元件是硬盘的读写放大用IC。
第16,一种半导体装置,半导体元件被面朝下与绝缘性树脂封装为一体,在其背面露出与所述半导体元件的焊接电极电连接的垫片、经与所述垫片一体的布线延伸的外部连接电极和配置在所述半导体元件的表面的散热用电极;在所述散热用电极的露出部设置有金属板,使其从所述垫片的背面突出来。
第17,所述外部连接电极的背面和所述散热用的电极的背面实质上被配置在同一平面上。
第18,所述半导体元件和所述散热用的电极用绝缘材料固定着。
第19,所述散热用的电极和所述金属板用绝缘材料或导电材料固定着。
第20,所述散热用的电极和所述金属板使用同一材料形成一体。
第21,所述绝缘性树脂的背面从所述外部连接电极的背面突出来。
第22,所述外部连接电极的侧面和从所述外部连接电极的侧面延伸出来的绝缘材料的背面呈同一曲面。
第23,一种半导体模块,具有设置了导电图形的第一支持件和半导体装置,所述半导体装置的与所述导电图形电连接的半导体元件被面朝下与绝缘性树脂封装为一体,在其背面露出与所述半导体元件的焊接电极电连接的垫片、经与所述垫片一体的布线设置的外部连接电极和配置在所述半导体元件的表面的散热用电极;
所述外部连接电极与设置在所述第一支持件的上面的导电图形电连接,在对应于所述散热用电极的所述第一支持件上设置有开口部,在所述开口部设置有与所述散热用电极固定在一起的金属板。
第24,在所述第一支持件的背面粘接着固定了所述金属板的第二支持件。
第25,所述散热用的电极和所述金属板使用同一材料形成一体。
第26,对应于所述金属板的所述第二支持件上设置有由导电材料构成的固定板,所述固定板和所述金属板热合在一起。
第27,所述金属板由以Cu为主要材料的镀膜构成,所述第二支持件由以Al为主要材料的镀膜构成,所述固定板由形成在所述第二支持件上的以Cu为主要材料的镀膜构成。
第28,所述绝缘性粘接装置的背面从所述外部连接电极的背面突出来。
第29,所述外部连接电极的侧面和与所述外部连接电极粘接的绝缘性粘接装置的背面呈同一曲面。
第30,所述半导体元件是硬盘的读写放大用IC。
图1是本发明的半导体模块的说明图。
图2是本发明的半导体装置的说明图。
图3是本发明的半导体装置的说明图。
图4是本发明的半导体装置的制造方法说明图。
图5是本发明的半导体装置的制造方法说明图。
图6是本发明的半导体装置的制造方法说明图。
图7是本发明的半导体装置的制造方法说明图。
图8是本发明的半导体装置的制造方法说明图。
图9是本发明的半导体装置的说明图。
图10是形成在导电图形上的流动防止膜的说明图。
图11是本发明的半导体模块的说明图。
图12是本发明的半导体装置的制造方法说明图。
图13是本发明的半导体装置的制造方法说明图。
图14是本发明的半导体装置的制造方法说明图。
图15是本发明的半导体装置的说明图。
图16是半导体元件与垫片的连接结构的说明图。
图17是硬盘的说明图。
图18是图17中采用的原来的半导体模块的说明图。
本发明提供高散热性且轻薄短小的半导体装置的同时,提供安装在该半导体装置内的半导体模块例如安装在柔性片上的半导体模块(下称FCA),实现安装了该FCA的机器例如硬盘的特性改善。
首先,作为安装FCA的机器的一例,用图17参照硬盘100,把FCA表示在图1中。图2~图16表示安装在FCA中的半导体装置及其制造方法。
说明安装FCA的机器的第一实施例
作为该机器,再次说明在现有技术栏中说明了的图17的硬盘100。
为了把硬盘100安装在计算机等内,必要时把它安装在主板112上。该主板112安装有阴型(或阳型)连接器。所述主板112上的连接器与安装在FCA上并从箱体101的背面露出来的阳型(或阴型)连接器111相连接。在箱体101中,记录媒体即记录盘102根据其容量把多张层叠起来,磁头104以20~30nm的高度浮在记录盘102的上方,为了进行扫描,把记录盘102之间的间隔设置在该扫描中不发生问题,维持该间隔地把记录盘102装配在主轴电机103上。该主轴电机103被安装在安装用基板上,配置在按装基板背面的连接器从箱体101的背面露出来。该连接器也与主板112的连接器相连接。这样,在主板112上安装有驱动磁头104的读写放大用IC108的IC、驱动主轴电机103的IC、驱动致动器的IC、暂时保管数据的缓冲存储器和实现厂家独自驱动的ASIC等,当然也可以安装有其他被动元件、主动元件。
应该使磁头104与读写放大用IC108的连接布线尽可能地短,读写放大用IC108被配置在致动器107上。但是,由此说明的本发明的半导体装置因为非常薄而且轻,所以除致动器以外,都可以安装在臂105或悬臂106上。这时,如图1B所示,由于半导体装置10的背面从第一支持件11的开口部12露出来,所以,半导体装置10的背面与臂105或悬臂106热结合,半导体装置10的热能够经臂105、箱体101发散外部去。
如图17所示,在把读写放大用IC108安装于致动器107上的情况下,读写放大用IC108把每个信道的读写用的电路形成在一个芯片上,以便多个磁传感器能够读写。但是,该悬臂106的每个悬臂上装配的磁头104专用的读写用电路可以被安装在各自的悬臂上。这样,就能够使磁头104与读写放大用IC108的布线距离远远地短于图18的结构,并能够降低其分阻抗,从而能够提高读写速度。
说明半导体装置的第二实施例
首先参照图2说明本发明的半导体装置。图2A是半导体装置的平面图,图2B是沿A-A线的断面图。
图2中,以下的构成要素被埋入在绝缘性树脂13内,即:垫片14…、设置在围绕在该垫片14周围的区域内的散热用的电极15、设置在该散热用的电极15上的半导体元件16都被埋入在绝缘性树脂13内。半导体元件16被面朝下地安装,并经绝缘性粘接装置17与散热用的电极15固定粘接在一起,考虑粘接性能,把它们分为4块。标号18A表示因4分割而形成的分离沟。在半导体元件16与散热用的电极15的间隙窄而绝缘性粘接装置17难以侵入的情况下,如图18所示,在其表面上,也可以把比所述分离沟18A更浅的沟形成在散热用的电极15的表面上。
半导体元件16的焊接电极19与垫片14经软焊料等钎料电连接,也可以使用Au的补片代替软焊料。
这种连接方法也用于别处,例如:也可以把补片置于半导体元件的焊接电极19上,再用超声波或压接把补片连接在焊接电极19上。在被压接的补片的周围也可以设置软焊料、导电膏、各向异性的导电粒子。在发明的实施例的栏目的最后,使用图16详细描述这些结构。
垫片14的背面从绝缘性树脂13中露出来,原样构成外部连接电极21,垫片14…的侧面按非各向异性进行刻蚀,这里具有用湿刻蚀形成的弯曲结构,由这种弯曲结构产生锚固效果。
本结构由半导体元件16、多个导电图形14、散热用的电极15、绝缘性粘接装置17和埋入这些部分的绝缘性树脂13等5种材料构成。在半导体元件16的配置区域内,在散热用的电极15上、垫片14上及其间形成所述绝缘性粘接装置17,特别是在刻蚀形成的分离沟18中设置有所述绝缘性粘接装置17,绝缘性粘接装置的背面从半导体装置10A的背面露出来。绝缘性树脂13把它们全都封装起来。而且,由绝缘性树脂13和绝缘性粘接装置17来支持所述垫片14…、散热用的电极15、半导体元件16。
作为绝缘性粘接装置17最好是由绝缘材料构成的粘接剂或未充满材料。是粘接剂的情况下,可以预先把粘接剂涂敷在半导体元件16的表面,连接用Au补片代替软焊料20的垫片14时固定粘接起来。未充满材料17可以在软焊料20(或补片)与垫片14连接之后浸透到其间隙中。
作为绝缘性树脂,可以使用环氧树脂等热固性树脂、聚酰亚胺树脂、对聚苯硫等热塑性树脂。
如果绝缘性树脂13是用金属模具固定的树脂、可浸渍涂敷被覆的树脂,就能够采用全部的树脂。作为导电图形14,可以使用以Cu为主要材料的导电箔、以Al为主要材料的导电箔、或Fe-Ni合金、Al-Cu的层积体、Al-Cu-Al的层积体。当然,即使其他导电材料也可以,特别是最好采用能够进行刻蚀的导电材料、可用激光蒸发的导电材料。如果考虑半刻蚀性、电镀的形成性和热应力,最好使用以压延形成的Cu为主要材料的导电材料。
在本发明中,因为绝缘性树脂13和绝缘性粘接装置17也被填充在所述分离沟18内,所以,能够防止导电图形的脱落。采用干刻蚀或湿刻蚀来实施非各向异性的刻蚀作为刻蚀方法能够把垫片14…的侧面作成弯曲结构而产生锚固效果。结果,能够实现垫片14、散热用的电极15不会从绝缘性树脂13上脱落下来的结构。
但是,散热用的电极15的背面露出于封装的背面。因此,散热用的电极15的背面能够与后述的金属板23、第二支持件24或第二支持件24上形成的固定板25接触或固定在一起。按照这样的结构,就能够把从半导体元件16产生的热散掉,并能够防止半导体元件16的温升,能够增大该半导体元件16的驱动电流或驱动频率。
本半导体装置10A由于用封装散热用的电极15的封装树脂即绝缘性树脂13来支持,所以就不要支持基板。这种构成是本发明的特征。原来的半导体装置的导电路径用支持基板(柔性片、印刷基板或陶瓷基板)来支持,并用引线框架支持着,所以,附加有本来也可以不要的构成。但是,本电路装置用必要的最小限度的构成要素来构成,并且不要支持基板,所以,既薄又轻,但是因为能够抑制材料费用,所以价格低。因此,如第一实施例所说明的那样,也能够安装在硬盘的臂或悬臂上。
封装的背面露出垫片14、散热用的电极15,在该区域内被覆例如软焊料等钎料时,为了扩大散热用的电极15方的面积,而润湿膜厚不同的钎料。因此,在半导体装置10A的背面形成绝缘被覆膜26,使钎料的膜厚均匀。图2A所示的虚线27表示从绝缘被覆膜26露出的露出部,这里,因为垫片14的背面以矩形露出,所以从绝缘被覆膜26露出与其同样大小的部分。
这样,由于钎料润湿的部分实质上大小一样,所以形成在其上的钎料的厚度实质上就相同。这在焊锡印刷后、软溶后也是一样的。可以说即使Ag、Au、Ag-Pd等导电膏也是同样的。按照这种结构,能够精确地计算金属板23的背面从垫片14的背面突出哪些部分。
如果把金属板23和导电图形32设定在同一面,就能够把垫片14和散热用的电极15两方依次焊接起来。考虑到半导体元件的散热性,散热用的电极15的露出部27也可以大于垫片14的露出尺寸。
由于设置了绝缘被覆膜26,就能够使设置在第一支持件11上的导电图形延伸到半导体装置10A的背面。一般,为了防止短路,设置在第一支持件11上的布线被配置得与迂回过所述半导体装置10A的固定区域,但是由于形成所述绝缘被覆膜26而能够把导电图形配置得不再迂回。但是,因为绝缘树脂13、绝缘性粘接装置17也从导电图形飞出,所以设置在半导体装置10A背面的焊料SD都不短路。
说明半导体装置10B的第三实施例
图3表示本半导体装置10B,图3A是其平面图,图3B是沿A-A线的断面图。因为与图2的结构类似,所以这里仅说明不同的部分。
图2中,把垫片14的背面原样作为外部连接电极21,但是,在本实施例中,在垫片14上形成有一体形成的布线30和与布线30一体形成的外部连接电极31。
用虚线表示的矩形是半导体元件16,在半导体元件16的背面,配置有所述外部连接电极31,如图所示,外部连接电极31被配置为环状,这种配置就成为与公知的BGA相同或类似的结构。
当把半导体元件16原样配置在导电图形14、30、31和散热用的电极15上时,两者有可能经半导体元件16的背面短路,因此,绝缘性粘接装置17仅应采用绝缘材料,不能使用导电材料。
第一支持件11的导电图形32与外部连接电极31相连接,垫片14的背面、布线30的背面用绝缘被覆膜26被覆。外部连接电极31上用虚线表示的圆圈、散热用的电极15上表示的虚线圆圈是从绝缘被覆膜26露出来的部分。
另外,因为外部连接电极31延伸到半导体元件16的背面,所以散热用的电极15形成得比图2的散热用的电极15小,绝缘性粘接装置17覆盖散热用的电极15、外部连接电极31和布线30。绝缘性树脂13被覆垫片14、布线30、半导体元件16、金属细线20。
在本实施例的垫片14的数目非常大而其尺寸小的情况下,能够经布线再配置外部连接电极,并具有可以增大外部连接电极尺寸的优点。设置布线就能够缓和加到焊接部的变形。特别是在形成为波状时为好。半导体元件16和散热用的电极15用绝缘性粘接装置17固定粘接起来,因为是绝缘材料,所以其热阻成为问题。但是,如果用混入有助于Si氧化物或氧化铝等的热传导的填料的硅树脂构成绝缘性粘接装置,就能够把半导体元件16的热良好地传递到散热用的电极15。
使所述填料的粒径统一就能够使散热用的电极15和半导体元件16的背面的间隔均匀。因此,在形成考虑了热传导的微小的间隙的情况下,在绝缘性粘接装置软化状态时轻压半导体元件16,使其原样硬化,就能够形成其间隙。
说明半导体装置10A、10B的制造方法的第四实施例
本制造方法仅仅是由垫片14、散热用的电极15构成的图形不同或者在它上面追加布线、外部连接电极31的图形不同,因为都是用半刻蚀来形成凸状,所以除该图形的形状之外,实质上都一样。
这里,使用图3的半导体装置10B来说明其制造方法。从图4到图9是对应于沿图3A的A-A线的断面图。
首先,如图4那样准备导电箔40,厚度最好为10μm~300μm,这里,采用70μm的压延铜箔。接下来,在该导电箔40的表面形成导电被覆膜41或光保护膜作为抗刻蚀掩膜。该图形与图3A的垫片14…、布线30…、外部连接电极31…、散热用的电极15是一样的图形。在采用光保护膜代替导电被覆膜41的情况下,在光保护膜的下层至少对应于垫片的部分上形成Au、Ag、Pd或Ni等的导电被覆膜。这是为了能够焊接而设置的被覆膜(以上参照图4)。
然后,经所述导电被覆膜41或光保护膜半刻蚀导电箔40。刻蚀深度可以比导电箔40的厚度浅。刻蚀深度越浅就越能够形成细微的图形。
进行半刻蚀就能够使导电图形14、30、31、散热用的电极15在导电箔40的表面上出现凸状。如上所述,这里,导电箔40采用以压延形成的Cu为主要材料的Cu箔。但是也可以是由Al构成的导电箔、由Fe-Ni合金构成的导电箔、Cu-Al层积体、Al-Cu-Al层积体。特别是Al-Cu-Al或Cu-Al-Cu层积体能够防止由热膨胀系数的差产生的弯曲。
在图3的矩形的虚线对应的部分上设置绝缘性粘接装置17,该绝缘性粘接装置17被设置在散热用的电极15与外部连接电极31的分离沟22、散热用的电极15与布线30间的分离沟、布线30间的分离沟以及它们的上面。符号DM是防止固定在这里的软焊料SD1流动的防止膜。如果不设置该流动防止膜DM,随着半导体元件16的倾斜,绝缘性粘接装置17就不能被注入到半导体元件和导电箔之间,也不能洗净(以上参照图5)。
接着,在设置了绝缘性粘接装置17区域上固定粘接半导体元件16,半导体元件16的焊接电极19与垫片14电连接。在图面上,因为半导体元件16被面朝下安装,所以采用软焊料SD1作为连接手段。
在该焊接时,垫片14…与导电箔40是一体的,但是,导电箔40的背面因为是平的,所以与焊接机的工作台面接触。因此,如果把导电箔40完全固定在焊接台上,形成在半导体元件16上的锡珠完全接触全部垫片14…,从而能够固定焊接,而不会出现不良焊接的固定。焊接台的固定例如在整个台面上设置多个真空吸引孔就可以。另外还有其他连接方法,最后参照图16来说明这种结构。
通过不采用支持基板而使用锡珠代替金属细线,使半导体元件16的高度能配置得更低,因此,能够把后述的封装的外形厚度能作得薄。
在使用下填满方法的情况下,首先固定半导体元件16和垫片14,然后下填满浸透,作为绝缘性粘接装置17(以上参照图6)
而且,在包含半导体元件16的全部区域内形成绝缘性树脂13,作为绝缘性树脂也可以是热塑性、热固性的任一种。
可以通过转移模制、喷塑模制、浸渍或涂敷来实现。作为树脂材料,可以用环氧树脂等热固化性树脂通过转移模制来实现,液晶聚合物、对聚苯硫等热塑性树脂可以用喷塑模制来实现。
在本实施例中,调整绝缘性树脂的厚度,以便从半导体元件的背面到上面被覆约100μm。考虑到半导体装置的强度,该厚度也可以加厚或减薄。如图14B所示,也可以使半导体元件16的背面露出来,这时,安装散热片就能够把半导体元件的热直接散到外面。
在注入树脂时,因为垫片14、布线30、外部连接电极31和散热用的电极15与片状导电箔40成为一体,所以导电箔40的偏移没有限制、也完全不存在这些铜箔图形的位置偏移。但是,与引线框架不同,这些导电图形之间完全不会发生树脂溢料。
以上,是把作为凸部形成的垫片14、布线30、外部连接电极31、散热用的电极15、半导体元件16埋入到绝缘性树脂13之内,并且凸部的下方的导电箔40从背面露出来(以上参照图7)。
然后除去露出于所述绝缘性树脂13的背面的导电箔40,把垫片14、布线30、外部连接电极31、散热用的电极15各个分离开。
考虑到各种各样的方法,这里的分离工序最好是刻蚀背面进行去除分离,也可以通过研磨或磨削进行削去分离。也可以两者同时采用。例如:如果一直削去到露出绝缘性树脂13为止,所出现的问题是导电箔40的削渣或削薄延展到外侧的毛刺状的金属会扎到绝缘性树脂13或绝缘性粘接装置17内。因此,如果进行刻蚀分离,在处于Cu的图形之间的绝缘性树脂13或绝缘性粘接装置17的表面上不会扎入导电箔40的金属。这样,就能够防止微细间隔的图形之间的短路。
构成为半导体装置10B的一个单元多个形成一体的情况下,在该分离工序之后,追加切片工序。
这里,采用切片装置各自分离开,但是即使扼流圈变速切断、榨制或切断都可以。
这里,在把Cu图形分离之后,在露出于被分离的背面的图形14、30、31、15上形成绝缘被覆膜26,为了使图3A的虚线的圆圈表示的部分露出来,把绝缘被覆膜26形成图形。此后,沿箭头表示的部分切割,作为半导体装置10B被切出。
也可以在切片之前或切片之后形成软焊料42。
按照以上的制造方法,垫片、布线、外部连接电极、散热用的电极、半导体元件都被埋入在绝缘性树脂中,所以能够实现既轻薄短小散热性又好的封装。
如图9所示,也可以不使用绝缘性树脂13而使用绝缘性粘接装置17来封装。图10所示的图形PTN表示垫片、布线、外部连接电极,在其上用阴影线表示的部分是软焊料流动防止膜的形成图形。防止软焊料流动的同时,也使其他区域上被覆该软焊料流动防止膜,从而能够提高绝缘性粘接装置的密封性。作为类型使用A~E来表示,但是也可以采用此外的图形。除软焊料的连接部以外,也可以在导电箔整个区域上形成流动防止膜。
下面来说明按照以上的制造方法产生的效果。
第一,导电图形被半刻蚀,与导电箔构成为一体地被支持着,所以,能够不要原来支持用的基板。
第二,因为在导电箔上形成进行半刻蚀而构成为凸部的导电图形,所以,能够使该导电图形微细化。因此,能够使宽度、间隔狭窄,从而能形成平面尺寸更小的图形。
第三,因为由导电图形、半导体元件、连接装置和封装材料构成,所以,能够以必要的最小限度来构成,能够无特别无用的材料,从而能够实现大幅度地抑制了成本的轻薄短小的半导体装置。
第四,垫片、布线、外部连接电极、散热用的电极用半刻蚀成为凸部来形成,并在封装后进行单个分离,所以,就不要连接杆、吊挂引线。因此,在本发明中,连接杆(吊挂引线)的形成、连接杆(吊挂引线)的切断全都不要。
第五,在构成为凸部的导电图形被埋入到绝缘性树脂中之后,再从绝缘性树脂的背面把导电箔去除掉,然后分离导电图形,所以,就能够不会像原来的引线框架那样引线与引线之间产生树脂溢出。
第六,半导体元件经绝缘粘接装置与散热用的电极固定粘接在一起,该散热用的电极从背面露出来,所以,从本半导体装置产生的热能够有效地从本半导体装置的表面向散热用的电极散出。另外,把Si氧化物或氧化铝等填料混入绝缘性粘接装置,就能够进一步提高其散热性。如果填料大小统一的话,就能够使半导体元件16与导电图形之间的间隙保持一定。
说明固定金属板23的半导体装置10A、10B和使用它的半导体模块的第五实施例
图1中表示该半导体模块(FCA)50,被安装的半导体装置是图3表示的半导体装置10B。
首先来说明由柔性片构成的第一支持件11。这里,从下层开始,按顺序层叠第一PI片51、第一粘接层52、导电图形53、第二粘接层54和第二PI片55。在导电图形是多层的情况下,还要使用粘接层,上下导电图形也可以经通孔电连接。如图1C所示,该第一支持件11至少形成仅能露出金属板23的第一开口部12。
为了使导电图形露出来,形成第二开口部56,对应于该第二开口部56的导电图形32也可以全部露出来,也可以仅露出被连接的部分。例如:也可以把第二PI片55和第二粘接层54全部去掉,如图所示,也可以把第二PI片55全部去掉,而去掉仅露出第二粘接层54的部分。这样,软焊料27就能够不流动。
本发明的半导体装置就是使金属板23贴合在散热用的电极15的背面。本发明的半导体模块是第一支持件的背面与金属板23大体上面面相贴。
考虑到第一支持件11和固定板25的厚度,来决定金属板23的厚度。垫片14和导电图形32经焊料27被固定焊接在一起时,决定其各自的厚度,以便使从第一开口部12露出来的金属板23与第一支持件11的背面实质上处于同一平面。因此,也有可能与第二支持件接触,也就有可能与固定板25的某第二支持件接触并固定粘接起来。
具体地说明该连接结构的几个例子。
第一例是采用Al、不锈钢等轻金属板或陶瓷基板作为第二支持件24,并使被固定粘接在半导体装置10的背面的所述金属板23接触在其上面的结构。即:不经固定板25直接接触第二支持件24。并且选择软焊料等钎料或添加填料的热传导性好的绝缘性粘接装置来固定粘接散热用的电极15与金属板23以及金属板23与第二支持件24。
第二例是采用Al、不锈钢等轻金属或陶瓷基板作为第二支持件24,在其上形成固定板25,并把该固定板25与金属板23固定粘接起来的结构。
例如:在以Al作为第二支持件24而采用的情况下,固定板25最好是Cu。这是因为在Al上能够镀Cu。膜厚最好为1~10μm。但是,因为是镀膜,所以能够在第二支持件24上贴紧地形成,而且固定板25与第二支持件24之间的热阻能够非常小。也可以涂敷导电膏作为固定板25,以此作为代用品。
另一方面,虽然Cu固定板25和Al基板经粘接剂可以固定粘接起来,但是,这种情况下热阻很大。
在采用陶瓷基板作为第二支持件24的情况下,固定板25形成在导电膏印刷烧结形成的电极上。
第二支持件24与第一支持件11用第三粘接层57固定粘接在一起。
例如:
第一PI片51:25μm
第二PI片55:25μm
第一~第三粘接层52、54、57:25μm(烧结后)
采用丙烯系粘接剂作为材料
软焊料27:50μm
第三粘接层57:25μm
采用丙烯系粘接剂作为材料
固定板25:约25μm
这样,如果调整决定各自的膜厚,在把半导体装置10固定粘接到第一支持件11上之后,就能够简单地使固定板25与设置的第二支持件24贴合起来。
准备在第一支持件11上贴合了第二支持件24的模块,然后把半导体装置10配置在形成于该模块上的开口部56上,此后,如果使软焊料熔融,就能够一次熔融软焊料地固定粘接起来而无连接不良。
因此,由半导体元件16产生的热就能够经散热用的电极15、金属板23、固定板25向第二支持件24散发出去。但是,与原来的结构(图17B)相比,由于大幅度地减小了热阻,所以能够提高半导体元件16的驱动电流、驱动频率。也可以把第二支持件24的背面安装在图17所示的致动器107、箱体101的底面或臂105上。因此,最后,就能够经箱体101把半导体元件的热散发到外部去。因此,即使把半导体模块安装到硬盘100上,半导体元件本身不会到较高温度,从而能够进一步提高作为硬盘100的读写速度。而且,FCA也可以安装在硬盘以外的机器上。这种情况下,第二支持件就与热阻小的构件接触。在安装到其他机器上的情况下,也可以采用印刷基板或陶瓷基板来取代柔性片。
说明代替金属板23使散热用的电极15飞出的半导体装置10C及其半导体模块50A的第六实施例
图11表示散热用的电极15A从垫片14的背面突出来,正像散热用的电极15同固定板25构成一体的结构。
首先,用图12~图14来说明其制造方法。图4~图8是同一制造方法,所以,省略了到此为止的说明。
图12表示把绝缘性树脂13被覆到导电箔40上的状态,在对应于散热用的电极15的部分上被覆光保护膜PR。如果经该光保护膜PR对导电箔40进行刻蚀,如图13所示,散热用的电极15A就能够从垫片14的背面突出来。而且,也可以有选择地形成Ag、Au等导电被覆膜来代替光保护膜PR,把它作为掩膜。该被覆膜也能作为防氧化膜。
在图1所示的把金属板23贴合起来的结构中,因为金属板23的厚度为125μm,非常之薄,所以,操作性很差。但是,该实施例中,用刻蚀形成突出的散热用的电极15A时,就不要所述的金属板23的竞争。
如图14所示,在垫片14、布线30、外部连接电极31完全分离之后,再被覆绝缘被覆膜26,使配置软焊料的部分露出来。且在软焊料42被粘接牢固后,在箭头所示的部分进行切割。
如图11所示,在此分离下来的半导体装置被安装到第一支持件11上,如前面所述,第二支持件24被粘接牢固。这时,因为散热用的电极15A突出来,所以也能够简单地经软焊料等与固定板25接合起来。图14B是使半导体元件16的背面从绝缘性树脂露出来的结构。例如:如果使半导体元件的背面接触上模具,就能够实现如图所示的封装结构。
说明半导体装置的第六实施例
图15A是按照本发明的半导体装置的平面图,图15B是对应于图15A的A-A线的断面图。
本发明把第一散热用的电极70A和第二散热用的电极70B配置成实质上同一平面,在其周围设置有垫片14。该垫片14的背面原样构成为外部连接电极,并且处于半导体芯片的焊接电极19的正下方。如图3所示,也可以采用再配置用的布线。在芯片与芯片之间,至少设置有一条桥线71,在该桥线71的两端,垫片14形成一体,该垫片14也连接到焊接电极19上。
在第一散热用的电极70A的上面,固定粘接着第一半导体芯片16A,在第二散热用的电极70B上,固定粘接着第二半导体芯片16B,并经焊料连接起来。
如由前述的制造方法的说明可知的那样,刻蚀导电箔,在完全分离之前用绝缘性树脂13进行模制而被支持,所以完全不要桥线71的落下、脱离。
如本实施例那样,本发明也能够把多个芯片作成为一个封装。
这样,至此为止的实施例考虑到一个读写放大用IC的散热来说明其结构。但是,在假定各种各样的机器的情况下,为了提高其特性,也可以假定必须考虑多个半导体元件的散热的情况。当然,也可以分别进行封装,但是也可以如图15那样,把多个半导体元件作在一个封装内。
图16可以应用于所有实施例,表示形成在半导体元件16上的补片B与垫片14的连接方法。P表示Au、Ag等的镀膜,根据需要来形成。
A是以ACP方式(各向异性的·导电的·膏/膜)把导电粒子***到补片B与垫片14(或镀膜P)之间并进行按压获得电气导通的方式。
B是以SBB方式(支座·补片·焊接)连接补片B和垫片14(或镀膜)的同时把导电膏CP配置在周围。
C是以ESP方式(环氧树脂·密封的·焊料·连接)在压接固定补片B时,软焊料SD也溶化并配置其周围。
D是以NCP方式(非·导电·膏)在压接导通的补片的周围配置绝缘性粘接装置。
E是以GGI方式(金·金·互连)用超声波把Au补片与Au镀膜结合起来。
最后的F是以焊料补片方式进行焊料接合,再在之间浸入绝缘性粘接装置或下填充。本申请就采用该方式。
以上,虽然连接方法各种各样,但是考虑到连接强度,还是从这些方法中进行选择。在外部连接电极的背面与第一支持件11之间也采用这样的结构。
从以上说明可知,在本发明中,提供了把金属板固定粘接在露出在封装的背面的散热用的电极上并从外部连接电极或垫片的背面突出来的半导体装置,从而具有容易向FCA安装的优点。
特别是在FCA上设置有开口部,该FCA的背面与所述半导体装置的散热用的电极处于同平面,从而具有容易与第二支持件的接触的特征。
使用Al作为第二支持件,在这里形成由Cu构成的固定板,并把散热用的电极或金属板固定粘接在该固定板上,,从而能够经第二支持件把从半导体元件产生的热散发到外部去。
因此,能够防止半导体元件的温升,能够达到接近于原来的能力的性能。特别是安装在硬盘中的FCA能够高效率地把该热散发到外部,所以,能够提高硬盘的读写速度。
Claims (30)
1.一种半导体装置,半导体元件被面朝下与绝缘性树脂封装为一体,在其背面露出与所述半导体元件的焊接电极电连接的垫片和处于所述半导体元件的表面的散热用电极,其特征在于在所述散热用电极的露出部设置有金属板,使其从所述垫片的背面突出来。
2.根据权利要求1的半导体装置,其特征在于所述垫片的背面和所述散热用的电极的背面被配置在实质上同一平面上。
3.根据权利要求1或2的半导体装置,其特征在于所述半导体元件和所述散热用的电极用绝缘材料固定在一起。
4.根据权利要求3的半导体装置,其特征在于所述散热用的电极和所述金属板用绝缘材料或导电材料固定在一起。
5.根据权利要求1~4的半导体装置,其特征在于所述散热用的电极和所述金属板使用同一材料形成一体。
6.根据权利要求1~5的任一项的半导体装置,其特征在于所述绝缘性树脂的背面从所述垫片的背面突出来。
7.根据权利要求6的半导体装置,其特征在于所述垫片的侧面和从所述垫片的侧面延伸出来的绝缘性树脂的背面呈同一曲面。
8.一种半导体模块,具有设置了导电图形的第一支持件和半导体装置,所述半导体装置的与所述导电图形电连接的半导体元件被面朝下与绝缘性树脂封装为一体,在其背面露出与所述半导体元件的焊接电极电连接的垫片和处于所述半导体元件的表面的散热用电极,其特征在于所述垫片与设置在所述第一支持件的上面的导电图形电连接,在对应于所述散热用电极的所述第一支持件上设置有开口部,在所述开口部设置有与所述散热用电极固定在一起的金属板。
9.根据权利要求8的半导体模块,其特征在于在所述第一支持件的背面粘接着固定着所述金属板的第二支持件。
10.根据权利要求8或9的半导体模块,其特征在于所述散热用的电极和所述金属板使用同一材料形成一体。
11.根据权利要求9或10的半导体模块,其特征在于对应于所述金属板的所述第二支持件上设置有由导电材料构成的固定板,所述固定板和所述金属板热接合在一起。
12.根据权利要求11的半导体模块,其特征在于所述金属板由以Cu为主要材料的镀膜构成,所述第二支持件由以Al为主要材料的镀膜构成,所述固定板由形成在所述第二支持件上的以Cu为主要材料的镀膜构成。
13.根据权利要求8~12的任一项的半导体模块,其特征在于所述绝缘性树脂的背面从所述垫片的背面突出来。
14.根据权利要求13的半导体模块,其特征在于所述垫片的侧面和从所述垫片的侧面延伸出来的绝缘性树脂的背面呈同一曲面。
15.根据权利要求8~14的任一项的半导体模块,其特征在于所述半导体元件是硬盘的读写放大用IC。
16.一种半导体装置,半导体元件被面朝下与绝缘性树脂封装为一体,在其背面露出与所述半导体元件的焊接电极电连接的垫片、经与所述垫片一体的布线延伸的外部连接电极和配置在所述半导体元件的表面的散热用电极,其特征在于在所述散热用电极的露出部设置有金属板,使其从所述垫片的背面突出来。
17.根据权利要求16的半导体装置,其特征在于所述外部连接电极的背面和所述散热用的电极的背面实质上被配置在同一平面上。
18.根据权利要求16或17的半导体装置,其特征在于所述半导体元件和所述散热用的电极用绝缘材料固定在一起。
19.根据权利要求18的半导体装置,其特征在于所述散热用的电极和所述金属板用绝缘材料或导电材料固定在一起。
20.根据权利要求18的半导体装置,其特征在于所述散热用的电极和所述金属板使用同一材料形成一体。
21.根据权利要求18的半导体装置,其特征在于所述绝缘性树脂的背面从所述外部连接电极的背面突出来。
22.根据权利要求21的半导体装置,其特征在于所述外部连接电极的侧面和从所述外部连接电极的侧面延伸出来的绝缘材料的背面呈同一曲面。
23.一种半导体模块,具有设置了导电图形的第一支持件和半导体装置,在其背面露出所述半导体装置的与所述导电图形电连接的半导体元件被面朝下与绝缘性树脂封装为一体,与所述半导体元件的焊接电极电连接的垫片、经与所述垫片一体的布线设置的外部连接电极和配置在所述半导体元件的表面的散热用电极,其特征在于所述外部连接电极与设置在所述第一支持件的上面的导电图形电连接,在对应于所述散热用电极的所述第一支持件上设置有开口部,在所述开口部设置有与所述散热用电极固定在一起的金属板。
24.根据权利要求23的半导体模块,其特征在于在所述第一支持件的背面粘接着固定了所述金属板的第二支持件。
25.根据权利要求23或24的半导体模块,其特征在于所述散热用的电极和所述金属板使用同一材料形成一体。
26.根据权利要求24或25的半导体模块,其特征在于对应于所述金属板的所述第二支持件上设置有由导电材料构成的固定板,所述固定板和所述金属板热合在一起。
27.根据权利要求26的半导体模块,其特征在于所述金属板由以Cu为主要材料的镀膜构成,所述第二支持件由以Al为主要材料的镀膜构成,所述固定板由形成在所述第二支持件上的以Cu为主要材料的镀膜构成。
28.根据权利要求23~27的任一项的半导体模块,其特征在于所述绝缘性粘接装置的背面从所述外部连接电极的背面突出来。
29.根据权利要求28的半导体模块,其特征在于所述外部连接电极的侧面和与所述外部连接电极粘接的绝缘性粘接装置的背面呈同一曲面。
30.根据权利要求23~29的任一项的半导体模块,其特征在于所述半导体元件是硬盘的读写放大用IC。
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EP (1) | EP1199746B1 (zh) |
KR (1) | KR100433438B1 (zh) |
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JP2010278318A (ja) | 2009-05-29 | 2010-12-09 | Renesas Electronics Corp | 半導体装置 |
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CN104637910A (zh) * | 2013-11-12 | 2015-05-20 | 三菱电机株式会社 | 半导体模块和其制造方法 |
US9698078B2 (en) | 2013-11-12 | 2017-07-04 | Mitsubishi Electric Corporation | Semiconductor module and method for manufacturing the same |
CN104637910B (zh) * | 2013-11-12 | 2018-01-16 | 三菱电机株式会社 | 半导体模块和其制造方法 |
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CN1184684C (zh) | 2005-01-12 |
EP1199746B1 (en) | 2007-02-14 |
US20020041023A1 (en) | 2002-04-11 |
EP1199746A2 (en) | 2002-04-24 |
TW532049B (en) | 2003-05-11 |
EP1199746A3 (en) | 2004-04-21 |
KR100433438B1 (ko) | 2004-05-31 |
KR20020027147A (ko) | 2002-04-13 |
US6967401B2 (en) | 2005-11-22 |
DE60126549D1 (de) | 2007-03-29 |
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