CN1347581A - 带有应变补偿层的半导体结构及其制备方法 - Google Patents

带有应变补偿层的半导体结构及其制备方法 Download PDF

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Publication number
CN1347581A
CN1347581A CN00805556A CN00805556A CN1347581A CN 1347581 A CN1347581 A CN 1347581A CN 00805556 A CN00805556 A CN 00805556A CN 00805556 A CN00805556 A CN 00805556A CN 1347581 A CN1347581 A CN 1347581A
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layer
superlattice
cladding
gan
conductivity type
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高山彻
马场考明
詹姆斯S·哈里斯Jr.
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
CN00805556A 1999-03-26 2000-03-01 带有应变补偿层的半导体结构及其制备方法 Pending CN1347581A (zh)

Applications Claiming Priority (2)

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US27731999A 1999-03-26 1999-03-26
US09/277,319 1999-03-26

Publications (1)

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CN1347581A true CN1347581A (zh) 2002-05-01

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EP (1) EP1183761A2 (ja)
JP (1) JP2002540618A (ja)
CN (1) CN1347581A (ja)
WO (1) WO2000058999A2 (ja)

Cited By (25)

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CN1326298C (zh) * 2005-06-29 2007-07-11 武汉电信器件有限公司 一种提高半导体激光器成品率的方法
US7339255B2 (en) 2004-08-24 2008-03-04 Kabushiki Kaisha Toshiba Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
CN100454698C (zh) * 2003-10-11 2009-01-21 英坦斯有限公司 半导体波导器件中输出光束发散的控制
CN100468790C (zh) * 2002-05-30 2009-03-11 克里公司 具有不掺杂包层和多量子阱的ⅲ族氮化物led
CN101425556B (zh) * 2004-08-26 2011-12-14 Lg伊诺特有限公司 氮化物半导体发光器件及其制造方法
CN102368519A (zh) * 2011-10-27 2012-03-07 华灿光电股份有限公司 一种提高半导体二极管多量子阱发光效率的方法
CN102473796A (zh) * 2009-06-30 2012-05-23 飞利浦拉米尔德斯照明设备有限责任公司 控制iii氮化物器件中的凹坑形成
CN102610719A (zh) * 2011-01-20 2012-07-25 夏普株式会社 变质基板体系、其制备方法以及iii-氮化物半导体器件
CN102623575A (zh) * 2012-04-17 2012-08-01 中国科学院苏州纳米技术与纳米仿生研究所 一种InP衬底生长InGaAs电池层的结构及其方法
CN103022211A (zh) * 2012-12-28 2013-04-03 南京大学 极化增强的p-i-n结InGaN太阳电池
CN103137799A (zh) * 2013-01-27 2013-06-05 厦门大学 一种陡峭界面GaN/AlGaN超晶格的制备方法
CN103151435A (zh) * 2013-01-30 2013-06-12 东南大学 一种具有复合势垒的氮化镓基发光二极管
CN103620736A (zh) * 2011-06-15 2014-03-05 奥斯兰姆奥普托半导体有限责任公司 光电子半导体本体和用于制造光电子半导体本体的方法
CN105118904A (zh) * 2015-08-14 2015-12-02 湘能华磊光电股份有限公司 Led外延层结构生长方法及所得外延层结构和led芯片
CN105514234A (zh) * 2015-12-14 2016-04-20 安徽三安光电有限公司 一种氮化物发光二极管及其生长方法
CN105514239A (zh) * 2016-02-23 2016-04-20 安徽三安光电有限公司 一种发光二极管
CN107564999A (zh) * 2017-08-29 2018-01-09 湘能华磊光电股份有限公司 一种提升发光效率的led外延生长方法
CN109309340A (zh) * 2017-07-28 2019-02-05 欧司朗光电半导体有限公司 用于制造多个激光二极管的方法和激光二极管
CN110783176A (zh) * 2019-10-30 2020-02-11 广西大学 一种低应力半导体材料制备方法
CN110808531A (zh) * 2019-09-29 2020-02-18 武汉云岭光电有限公司 一种半导体激光器外延结构
CN111653934A (zh) * 2020-06-05 2020-09-11 北京飓芯科技有限公司 一种基于立体掩模衬底的半导体激光器制备方法
CN111785813A (zh) * 2020-06-05 2020-10-16 北京飓芯科技有限公司 一种基于立体掩模衬底的MicroLED制备方法
CN113675284A (zh) * 2021-07-06 2021-11-19 扬州大学 基于半极性超晶格结构的宽波段紫外探测器及其制备方法
CN114389151A (zh) * 2020-10-21 2022-04-22 山东华光光电子股份有限公司 一种具有超晶格电子阻挡层的小功率AlGaInP红光半导体激光器及其制备方法
CN115050866A (zh) * 2022-08-16 2022-09-13 江苏第三代半导体研究院有限公司 极化可控的量子点Micro-LED同质外延结构及其制备方法

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JP4369438B2 (ja) * 2005-04-26 2009-11-18 シャープ株式会社 電界効果型トランジスタ
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JP2007250991A (ja) * 2006-03-17 2007-09-27 Nippon Telegr & Teleph Corp <Ntt> 超格子構造を含む半導体構造および該半導体構造を備える半導体デバイス
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JP6636459B2 (ja) 2014-05-27 2020-01-29 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ 半導体構造と超格子とを用いた高度電子デバイス
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US10396240B2 (en) 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
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CN100468790C (zh) * 2002-05-30 2009-03-11 克里公司 具有不掺杂包层和多量子阱的ⅲ族氮化物led
CN100454698C (zh) * 2003-10-11 2009-01-21 英坦斯有限公司 半导体波导器件中输出光束发散的控制
US7339255B2 (en) 2004-08-24 2008-03-04 Kabushiki Kaisha Toshiba Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
CN100449800C (zh) * 2004-08-24 2009-01-07 株式会社东芝 半导体衬底及在半导体衬底上通过外延生长制造的半导体器件
US7531397B2 (en) 2004-08-24 2009-05-12 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward <1-100> and <11-20> directions relative to {0001} crystal planes
CN101425556B (zh) * 2004-08-26 2011-12-14 Lg伊诺特有限公司 氮化物半导体发光器件及其制造方法
CN1326298C (zh) * 2005-06-29 2007-07-11 武汉电信器件有限公司 一种提高半导体激光器成品率的方法
CN102473796B (zh) * 2009-06-30 2015-07-22 飞利浦拉米尔德斯照明设备有限责任公司 控制iii氮化物器件中的凹坑形成
CN102473796A (zh) * 2009-06-30 2012-05-23 飞利浦拉米尔德斯照明设备有限责任公司 控制iii氮化物器件中的凹坑形成
CN102610719A (zh) * 2011-01-20 2012-07-25 夏普株式会社 变质基板体系、其制备方法以及iii-氮化物半导体器件
TWI586060B (zh) * 2011-06-15 2017-06-01 歐斯朗奧托半導體股份有限公司 光電半導體本體及光電元件
CN103620736A (zh) * 2011-06-15 2014-03-05 奥斯兰姆奥普托半导体有限责任公司 光电子半导体本体和用于制造光电子半导体本体的方法
US9478945B2 (en) 2011-06-15 2016-10-25 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor body and method for producing an optoelectronic semiconductor body
CN103620736B (zh) * 2011-06-15 2016-05-11 奥斯兰姆奥普托半导体有限责任公司 光电子半导体本体和用于制造光电子半导体本体的方法
CN102368519B (zh) * 2011-10-27 2016-04-20 华灿光电股份有限公司 一种提高半导体二极管多量子阱发光效率的方法
CN102368519A (zh) * 2011-10-27 2012-03-07 华灿光电股份有限公司 一种提高半导体二极管多量子阱发光效率的方法
CN102623575A (zh) * 2012-04-17 2012-08-01 中国科学院苏州纳米技术与纳米仿生研究所 一种InP衬底生长InGaAs电池层的结构及其方法
CN103022211A (zh) * 2012-12-28 2013-04-03 南京大学 极化增强的p-i-n结InGaN太阳电池
CN103022211B (zh) * 2012-12-28 2015-02-11 南京大学 极化增强的p-i-n结InGaN太阳电池
CN103137799A (zh) * 2013-01-27 2013-06-05 厦门大学 一种陡峭界面GaN/AlGaN超晶格的制备方法
CN103137799B (zh) * 2013-01-27 2015-03-04 厦门大学 一种陡峭界面GaN/AlGaN超晶格的制备方法
CN103151435B (zh) * 2013-01-30 2015-05-06 东南大学 一种具有复合势垒的氮化镓基发光二极管
CN103151435A (zh) * 2013-01-30 2013-06-12 东南大学 一种具有复合势垒的氮化镓基发光二极管
CN105118904A (zh) * 2015-08-14 2015-12-02 湘能华磊光电股份有限公司 Led外延层结构生长方法及所得外延层结构和led芯片
CN105118904B (zh) * 2015-08-14 2017-11-17 湘能华磊光电股份有限公司 Led外延层结构生长方法及所得外延层结构和led芯片
CN105514234A (zh) * 2015-12-14 2016-04-20 安徽三安光电有限公司 一种氮化物发光二极管及其生长方法
CN105514239A (zh) * 2016-02-23 2016-04-20 安徽三安光电有限公司 一种发光二极管
US10985528B2 (en) 2017-07-28 2021-04-20 Osram Oled Gmbh Laser diodes separated from a plurality of laser bars
CN109309340B (zh) * 2017-07-28 2020-12-08 欧司朗光电半导体有限公司 用于制造多个激光二极管的方法和激光二极管
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