CN1325700C - 大直径区熔硅单晶生产方法 - Google Patents
大直径区熔硅单晶生产方法 Download PDFInfo
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- CN1325700C CN1325700C CNB2006100134980A CN200610013498A CN1325700C CN 1325700 C CN1325700 C CN 1325700C CN B2006100134980 A CNB2006100134980 A CN B2006100134980A CN 200610013498 A CN200610013498 A CN 200610013498A CN 1325700 C CN1325700 C CN 1325700C
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 24
- 239000010703 silicon Substances 0.000 title claims abstract description 24
- 238000004857 zone melting Methods 0.000 title claims abstract description 16
- 238000002109 crystal growth method Methods 0.000 title claims description 6
- 239000013078 crystal Substances 0.000 claims abstract description 47
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000012423 maintenance Methods 0.000 claims abstract description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- 238000010899 nucleation Methods 0.000 claims abstract description 10
- 238000002844 melting Methods 0.000 claims abstract description 9
- 230000008018 melting Effects 0.000 claims abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 8
- 238000005273 aeration Methods 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 238000007664 blowing Methods 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract 1
- 230000007123 defense Effects 0.000 abstract 1
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009172 bursting Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Application Number | Priority Date | Filing Date | Title |
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CNB2006100134980A CN1325700C (zh) | 2006-04-21 | 2006-04-21 | 大直径区熔硅单晶生产方法 |
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CNB2006100134980A CN1325700C (zh) | 2006-04-21 | 2006-04-21 | 大直径区熔硅单晶生产方法 |
Publications (2)
Publication Number | Publication Date |
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CN1865528A CN1865528A (zh) | 2006-11-22 |
CN1325700C true CN1325700C (zh) | 2007-07-11 |
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CNB2006100134980A Active CN1325700C (zh) | 2006-04-21 | 2006-04-21 | 大直径区熔硅单晶生产方法 |
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Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100585031C (zh) * | 2006-12-06 | 2010-01-27 | 天津市环欧半导体材料技术有限公司 | <110>无位错硅单晶的制造方法 |
WO2008128378A1 (fr) * | 2007-04-19 | 2008-10-30 | Tianjin Huanou Semiconductor Material And Technology Co., Ltd. | Procédé à traction verticale et à fusion de zones pour produire du silicium monocristallin |
DE102007047210A1 (de) * | 2007-10-02 | 2009-04-09 | Wacker Chemie Ag | Polykristallines Silicium und Verfahren zu seiner Herstellung |
CN101525764B (zh) * | 2009-04-16 | 2010-12-08 | 峨嵋半导体材料研究所 | 一种真空区熔高阻硅单晶的制备方法 |
CN101746761B (zh) * | 2009-10-19 | 2011-08-24 | 洛阳金诺机械工程有限公司 | 一种硅芯熔接方法 |
CN101974779B (zh) * | 2010-11-03 | 2011-07-13 | 天津市环欧半导体材料技术有限公司 | 一种制备<110>区熔硅单晶的方法 |
CN103422156A (zh) * | 2012-05-24 | 2013-12-04 | 刘剑 | 一种多晶料在区熔单晶硅中的一次成晶工艺制备方法 |
CN102794281B (zh) * | 2012-07-06 | 2014-06-18 | 宁夏隆基硅材料有限公司 | 直拉法单晶炉热场中的石墨件的清洗方法 |
CN102808216A (zh) * | 2012-08-22 | 2012-12-05 | 北京京运通科技股份有限公司 | 一种区熔单晶硅生产工艺方法及区熔热场 |
CN103866375B (zh) * | 2012-12-10 | 2016-02-24 | 有研半导体材料有限公司 | 一种掺杂区熔硅单晶的制备方法 |
CN103451718B (zh) * | 2013-09-05 | 2016-08-17 | 浙江晶盛机电股份有限公司 | 可连续生产的区熔炉装置及其工艺控制方法 |
CN104711664B (zh) * | 2013-12-16 | 2017-09-22 | 有研半导体材料有限公司 | 一种提高大直径区熔硅单晶生产质量的方法 |
CN104328482A (zh) * | 2014-09-30 | 2015-02-04 | 天津市环欧半导体材料技术有限公司 | 一种大直径区熔硅单晶的生长方法 |
CN106702473B (zh) * | 2015-07-20 | 2019-05-21 | 有研半导体材料有限公司 | 一种区熔硅单晶生长中预防多晶出刺的工艺 |
JP6471683B2 (ja) * | 2015-12-07 | 2019-02-20 | 株式会社Sumco | シリコン単結晶の製造方法 |
CN107366017A (zh) * | 2017-09-04 | 2017-11-21 | 青海鑫诺光电科技有限公司 | 一种单晶硅收尾设备及其使用方法 |
CN109487331B (zh) * | 2018-12-20 | 2020-09-22 | 天津中环领先材料技术有限公司 | 一种大直径区熔硅单晶自动收尾方法及*** |
CN109440183B (zh) * | 2018-12-20 | 2020-11-13 | 天津中环领先材料技术有限公司 | 一种优化型大直径区熔硅单晶收尾方法 |
CN109696345A (zh) * | 2019-01-31 | 2019-04-30 | 内蒙古通威高纯晶硅有限公司 | 一种磷硼检样棒头部预热拉晶方法 |
CN110318096A (zh) * | 2019-06-28 | 2019-10-11 | 北京天能运通晶体技术有限公司 | 区熔硅单晶收尾方法和拉制方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2731254A1 (de) * | 1977-07-11 | 1979-01-25 | Siemens Ag | Vorrichtung zum tiegelfreien zonenschmelzen eines halbleiterkristallstabes |
JPH0532478A (ja) * | 1991-07-30 | 1993-02-09 | Shin Etsu Handotai Co Ltd | 浮遊帯域溶融単結晶製造方法 |
JPH06104199A (ja) * | 1992-09-18 | 1994-04-15 | Shin Etsu Handotai Co Ltd | 中性子照射fzシリコン単結晶の照射欠陥除去方法 |
US6059875A (en) * | 1999-01-11 | 2000-05-09 | Seh America, Inc. | Method of effecting nitrogen doping in Czochralski grown silicon crystal |
CN1095505C (zh) * | 2000-03-30 | 2002-12-04 | 天津市环欧半导体材料技术有限公司 | 生产硅单晶的直拉区熔法 |
CN1724723A (zh) * | 2005-06-15 | 2006-01-25 | 天津市环欧半导体材料技术有限公司 | 大直径区熔硅单晶制备方法 |
-
2006
- 2006-04-21 CN CNB2006100134980A patent/CN1325700C/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2731254A1 (de) * | 1977-07-11 | 1979-01-25 | Siemens Ag | Vorrichtung zum tiegelfreien zonenschmelzen eines halbleiterkristallstabes |
JPH0532478A (ja) * | 1991-07-30 | 1993-02-09 | Shin Etsu Handotai Co Ltd | 浮遊帯域溶融単結晶製造方法 |
JPH06104199A (ja) * | 1992-09-18 | 1994-04-15 | Shin Etsu Handotai Co Ltd | 中性子照射fzシリコン単結晶の照射欠陥除去方法 |
US6059875A (en) * | 1999-01-11 | 2000-05-09 | Seh America, Inc. | Method of effecting nitrogen doping in Czochralski grown silicon crystal |
CN1095505C (zh) * | 2000-03-30 | 2002-12-04 | 天津市环欧半导体材料技术有限公司 | 生产硅单晶的直拉区熔法 |
CN1724723A (zh) * | 2005-06-15 | 2006-01-25 | 天津市环欧半导体材料技术有限公司 | 大直径区熔硅单晶制备方法 |
Non-Patent Citations (4)
Title |
---|
φ105mm区熔硅单晶的生长工艺研究 郭立洲,稀有金属,第26卷第6期 2002 * |
φ105mm区熔硅单晶的生长工艺研究 郭立洲,稀有金属,第26卷第6期 2002;大直径<100>区熔硅单晶生长的特点 谭伟时等,稀有金属,第21卷第3期 1997;大直径直拉硅单晶炉热场的改造及数值模拟 任丙彦,人工晶体学报,第29卷第4期 2000 * |
大直径<100>区熔硅单晶生长的特点 谭伟时等,稀有金属,第21卷第3期 1997 * |
大直径直拉硅单晶炉热场的改造及数值模拟 任丙彦,人工晶体学报,第29卷第4期 2000 * |
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CN1865528A (zh) | 2006-11-22 |
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Effective date of registration: 20191223 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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