CN1292101C - 大直径区熔硅单晶制备方法 - Google Patents
大直径区熔硅单晶制备方法 Download PDFInfo
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- CN1292101C CN1292101C CN 200510013851 CN200510013851A CN1292101C CN 1292101 C CN1292101 C CN 1292101C CN 200510013851 CN200510013851 CN 200510013851 CN 200510013851 A CN200510013851 A CN 200510013851A CN 1292101 C CN1292101 C CN 1292101C
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- single crystal
- silicon single
- zone melting
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- 239000013078 crystal Substances 0.000 title claims abstract description 86
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 52
- 239000010703 silicon Substances 0.000 title claims abstract description 52
- 238000004857 zone melting Methods 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 abstract 2
- 230000007123 defense Effects 0.000 abstract 1
- 230000012010 growth Effects 0.000 description 12
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000000153 supplemental effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000000802 nitrating effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 200510013851 CN1292101C (zh) | 2005-06-15 | 2005-06-15 | 大直径区熔硅单晶制备方法 |
Applications Claiming Priority (1)
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CN 200510013851 CN1292101C (zh) | 2005-06-15 | 2005-06-15 | 大直径区熔硅单晶制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN1724723A CN1724723A (zh) | 2006-01-25 |
CN1292101C true CN1292101C (zh) | 2006-12-27 |
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Application Number | Title | Priority Date | Filing Date |
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CN 200510013851 Active CN1292101C (zh) | 2005-06-15 | 2005-06-15 | 大直径区熔硅单晶制备方法 |
Country Status (1)
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CN (1) | CN1292101C (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100339513C (zh) * | 2006-04-19 | 2007-09-26 | 天津市环欧半导体材料技术有限公司 | 区熔硅单晶炉电气控制*** |
CN1325700C (zh) * | 2006-04-21 | 2007-07-11 | 天津市环欧半导体材料技术有限公司 | 大直径区熔硅单晶生产方法 |
CN1325702C (zh) * | 2006-04-26 | 2007-07-11 | 天津市环欧半导体材料技术有限公司 | 区熔气相掺杂太阳能电池硅单晶的生产方法 |
CN1325701C (zh) * | 2006-04-26 | 2007-07-11 | 天津市环欧半导体材料技术有限公司 | 气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法 |
CN100585031C (zh) * | 2006-12-06 | 2010-01-27 | 天津市环欧半导体材料技术有限公司 | <110>无位错硅单晶的制造方法 |
CN101974779B (zh) * | 2010-11-03 | 2011-07-13 | 天津市环欧半导体材料技术有限公司 | 一种制备<110>区熔硅单晶的方法 |
CN102358951B (zh) * | 2011-10-11 | 2014-04-16 | 天津市环欧半导体材料技术有限公司 | 一种生产φ6英寸区熔气掺硅单晶的热***及工艺 |
CN102534754B (zh) * | 2012-02-29 | 2014-11-12 | 浙江晶盛机电股份有限公司 | 一种改善区熔单晶炉热场的反射环提升装置 |
CN102808216A (zh) * | 2012-08-22 | 2012-12-05 | 北京京运通科技股份有限公司 | 一种区熔单晶硅生产工艺方法及区熔热场 |
CN103436951A (zh) * | 2013-08-27 | 2013-12-11 | 天津市环欧半导体材料技术有限公司 | 一种区熔硅单晶的拉制方法 |
CN109706521A (zh) * | 2017-10-25 | 2019-05-03 | 有研半导体材料有限公司 | 一种根据生长角度控制区熔单晶自动生长的方法 |
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2005
- 2005-06-15 CN CN 200510013851 patent/CN1292101C/zh active Active
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CN1724723A (zh) | 2006-01-25 |
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Effective date of registration: 20181105 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300161 No. 152, Zhang Gui Zhuang Road, Hedong District, Tianjin Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20191226 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |