CN1284233C - 电功率半导体装置 - Google Patents

电功率半导体装置 Download PDF

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CN1284233C
CN1284233C CNB031476058A CN03147605A CN1284233C CN 1284233 C CN1284233 C CN 1284233C CN B031476058 A CNB031476058 A CN B031476058A CN 03147605 A CN03147605 A CN 03147605A CN 1284233 C CN1284233 C CN 1284233C
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power semiconductor
electrical power
semiconductor device
mold resin
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CN1501484A (zh
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中岛泰
佐佐木太志
木村享
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Mitsubishi Electric Corp
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Abstract

本发明提供小型轻量、低成本、且生产率和耐振动性能优良的半导体装置。模制树脂壳体(1)由环氧树脂等热固化树脂制成，具有上表面(1T)和底面(1B)。模制树脂壳体(1)的非边缘部具有穿过上表面(1T)和底面(1B)之间的通孔(2)。电极(3N、3P、4a、4b)的一端从模制树脂壳体(1)的侧面突出。由图3可知，模制树脂壳体(1)的底面(1B)露出了散热板(5)的底面(5B)。散热板(5)的通孔(2)的周围设有开口部(6)。

Description

电功率半导体装置
技术领域
本发明涉及电功率半导体装置的结构。
背景技术
在常规的电功率半导体装置中，电功率半导体元件用焊锡焊接在绝缘基板的上表面上，绝缘基板的底面也是用焊锡焊接在金属基板的上表面上。电功率半导体元件通过金属连线连接在绝缘基板上的电极上。金属基板被多个螺栓固定在散热片上。用于穿螺栓的安装孔沿金属基板的边缘设置多个，在金属基板的中央设置一个。有一个树脂盒避开金属基板中央的螺栓，固定在金属基板的上表面上。焊接了电功率半导体元件的绝缘基板配置在盒内。盒内注入了用于确保绝缘和保护金属连线的凝胶。另外，在盒内的凝胶上还配置了用于密封的环氧树脂(可参考专利文献1)。
[专利文献1]
特开2000-228490号公报(图1，2)
可是，这种常规半导体装置，由于盒避开了金属基板中央的一个螺栓而固定在金属基板上，所以金属基板的中央部分产生了空间浪费，使装置的体积变大。
另外，由于盒的价格高，所以成本也高。
再有，由于需要凝胶的注入及固化和环氧树脂的注入及固化，所以生产率也低。
另外，当电功率半导体装置用在从外部施加振动的装置(如汽车)上时，盒与金属基板基本上一起振动，而凝胶的振动却比盒与金属基板的振动迟，所以，凝胶和盒与金属基板之间会产生相对位置变动。所以，金属连线会被凝胶拉扯，与电极连接的部分会产生疲劳而破损。
发明内容
本发明是为了解决上述问题而进行的，目的是提供小型轻量、低成本、且生产率高、耐振动的电功率半导体装置。
本发明的半导体装置包括：散热板、电功率半导体元件、模制树脂壳体、以及至少一个通孔。散热板具有相互对置的第一及第二主面。电功率半导体元件配置在第一主面上。模制树脂壳体覆盖散热板及电功率半导体元件，但露出散热板的第二主面。模制树脂壳体具有一个挨着散热板的主面和与其对置的另一主面。至少有一个通孔在模制树脂壳体的非边缘区域，避开电功率半导体元件及散热板，穿过模制树脂壳体的两个主面。
附图说明
图1是本发明实施方案1的电功率半导体装置结构的斜视图；
图2是本发明实施方案1的电功率半导体装置结构的俯视图；
图3是本发明实施方案1的电功率半导体装置结构的仰视图；
图4是省略了模制树脂壳体的本发明实施方案1的电功率半导体装置结构的俯视图；
图5是本发明实施方案1的电功率半导体装置的电路图；
图6是沿图4所示的线VI-VI的剖面结构图；
图7是将本实施方案1的电功率半导体装置安装在散热片的结构剖面图；
图8是将本实施方案1的电功率半导体装置安装在散热片的结构剖面图；
图9是本发明实施方案2的电功率半导体装置的结构剖面图；
图10是本发明实施方案3的电功率半导体装置的结构剖面图；
图11是本发明实施方案4的电功率半导体装置的结构剖面图；
图12是本发明实施方案4的电功率半导体装置的结构剖面图；
图13是本发明实施方案4的电功率半导体装置的结构剖面图；
图14是省略了模制树脂壳体的本实施方案5的电功率半导体装置结构的俯视图；
图15是本发明实施方案5的电功率半导体装置的电路图；
图16是本发明实施方案5的电功率半导体装置结构的斜视图；
图17是本发明实施方案5的变形例的俯视图；
图18是本发明实施方案5的变形例的斜视图；
图19是实施方案1～5的变形例的俯视图；
图20是省略了模制树脂壳体的图19所示电功率半导体装置结构的俯视图；
图21是图20所示电功率半导体装置的电路图。
标号说明
1 模制树脂壳体，2 通孔，5、5a、5b  散热板，6 开口部，
7a、7b、20a、20b  IGBT，8a、8b、21a、21b  续流二极管，
10 散热片，12 压板，14 螺栓，16、30 凹陷部，
24 间隙
具体实施方式
实施方案1
图1至图3分别为本发明实施方案1的电功率半导体装置结构的斜视图、俯视图及仰视图。模制树脂壳体1由环氧树脂等热固化树脂制成，具有上表面1T和底面1B。在模制树脂壳体1的非边缘部(在此例中接近中央)形成了穿过上表面1T和底面1B之间的通孔2。电极3N、3P、4a、4b各自的一端从模制树脂壳体1的侧面突出。由图3可知，模制树脂壳体1的底面1B露出了散热板5的底面5B。散热板5的通孔2的周围设置了开口部6。
散热板5是厚度为3mm左右的金属板(例如铜板)。模制树脂壳体安装在导电性的散热片上时，在两者之间配置绝缘的隔离材料，或硅树脂和橡胶材料等绝缘材料。也可以不设这种隔离材料和绝缘材料，而在散热板5的底面5B上形成厚度为200μm左右的含有50％左右氮化硼等填充物的绝缘树脂层。另外，还可以在绝缘树脂层的底面形成100μm左右的铜箔，用来防止因夹入了异物而引起绝缘树脂层损坏。
图4是本实施方案1的电功率半导体装置结构俯视图，图中省略了模制树脂壳体1。图5是本实施方案1的电功率半导体装置的电路图。由图5可知，本实施方案1的电功率半导体装置具有：IGBT7a、7b和续流二极管8a、8b。IGBT7a、7b的各集电极和续流二极管8a、8b的各负极都连接在电极3P上。IGBT7a、7b的各发射极和续流二极管8a、8b的各正极都连接在电极3N上。IGBT7a、7b的栅极分别连接在电极4a、4b上。
由图4可知，IGBT7a、7b芯片和续流二极管8a、8b芯片用焊锡焊接在散热板5的上表面5T上。其中，IGBT7a、7b的各集电极和续流二极管8a、8b的各负极形成在各芯片的底面。因此，IGBT7a、7b的各集电极和续流二极管8a、8b的各负极都与散热板5连接。另外，电极3P的另一端用焊锡焊接在散热板5的上表面5T上。这样IGBT7a、7b的各集电极和续流二极管8a、8b的各负极都通过散热板5与电极3P连接。
电极3N、4a、4b的另一端与散热板5的上表面5T之间有几毫米左右的间隙。IGBT7a、7b的各发射极和各栅极、以及续流二极管8a、8b的各正极形成在各芯片的上表面上。IGBT7a、7b的各发射极和续流二极管8a、8b的各正极通过由铝等制成的金属连线9连接在电极3N的另一端上。同样，IGBT7a、7b的各栅极也是通过金属连线8分别连接在电极4a、4b的另一端上。
图6是沿图4所示的VI-VI线的剖面图。模制树脂壳体1覆盖着散热板5、IGBT7a、以及续流二极管8b，但露出了散热板5的底面5B。通孔2避开了散热板5、IGBT7a、以及续流二极管8b。
模制树脂壳体1的底面1B和散热板5的底面5B排列在同一平面内。
图7、8与图6对应，是将本实施方案1的电功率半导体装置安装在散热片10上的结构剖面图。由图7可知，散热片10的上表面隔着硅基导热甘油(图中未示)连接在散热板5的底面5B上。散热片10的上表面形成有螺纹孔11。压板12是厚度为1mm左右的SK钢，上有穿透的螺纹孔13。压板12的底面连接在模制树脂壳体1的上表面1T上。螺栓14穿过螺纹孔11、13以及通孔2，将夹着模制树脂壳体1的散热片10和压板12固定。在螺栓14的头部和模制树脂壳体1的上表面1T之间设有弹簧垫15。
由图8可知，散热片10的上表面隔着硅基导热甘油(图中未示)
连接在散热板5的底面5B上。散热片10的上表面有螺纹孔11。螺栓14穿过螺纹孔11及通孔2，将模制树脂壳体1和散热片10固定。在螺栓14的头部与模制树脂壳体1的上表面1T之间设有弹簧垫15。如上所述，模制树脂壳体1由热固化树脂制成。因为热固化树脂的塑变现象比热可塑树脂小，所以可以将螺栓14或弹簧垫15直接压在模制树脂壳体1的上表面1T上。
因为本实施方案1的电功率半导体装置不用在金属基板上避开金属基板中央的一个螺栓来固定盒，所以，在金属基板中央不会产生空间浪费。另外，螺栓14的头部及弹簧垫15不是压在散热片5的上表面5T上，而是直接压在压板12的上表面或模制树脂壳体1的上表面1T上。因此，不必将螺栓14的头部及弹簧垫15压着的区域设计成散热片5，所以，不必将散热片5设计得很大。因此，比常规电功率半导体装置的体积小。
另外，由于不需要高价的盒，所以比常规电功率半导体装置的成本低。
再有，由于不需要凝胶的注入及固化，所以比常规电功率半导体装置的生产效率高。
另外，即使将电功率半导体装置用在从外部施加振动的装置(如汽车)上，也能够防止因凝胶的拉扯而导致的金属连线的疲劳破损。所以，比常规半导体装置耐振动。
实施方案2
图9与图6对应，是本发明实施方案2的电功率半导体装置结构的剖面图。模制树脂壳体1的底面1B的中央比周边部分突出，成弯曲状。这种弯曲结构可以通过将模制树脂壳体1的材质的固化收缩或成形收缩程度设定得比散热板5的材质的热收缩程度大来实现。另外，模制树脂壳体1材质的线膨胀率最好小于散热板5材质的线膨胀率。例如，散热板5的主要材质是铜时，利用固化收缩率为0.4％左右，线膨胀率为15×10-6/K左右的材料来制作模制树脂壳体1即可。例如在线型酚醛环氧树脂中添加约70％的结晶硅石和熔融硅石的混合物即可。通过改变结晶硅石和熔融硅石的混合比可以调整模制树脂壳体1的线膨胀率。
这样，本实施方案2的电功率半导体装置的模制树脂壳体1的底面1B的中央突出，成弯曲状。因此，如图7所示，用压板12及螺栓14将模制树脂壳体1固定在散热片10上时，能使散热板5紧贴在散热片10上。
另外，模制树脂壳体1材质的线膨胀率小于散热板5材质的线膨胀率时，还可以获得如下效果。即，因IGBT7a、7b等发热而使模制树脂壳体1和散热板5的温度上升时，模制树脂壳体1的底面1B向突出的方向弯曲。因此，在模制树脂壳体1的底面1B挤压散热片10的上表面的方向上产生作用力，所以，能使散热板5紧贴在散热片10上。
实施方案3
图10与图6对应，是本发明实施方案3的电功率半导体装置结构的剖面图。模制树脂壳体1的上表面1T的中央比周边突出，成弯曲状。这种弯曲结构可以通过将模制树脂壳体1材质的固化收缩或成形收缩程度设定得比散热板5材质的热收缩程度小来实现。例如，散热板5的主要材质是铝时，利用线膨胀率为20×10-6/K左右的材料来制作模制树脂壳体1即可。
这样，本实施方案3的电功率半导体装置的模制树脂壳体1的上表面突出，成弯曲状。因此，如图8所示，用螺栓14将模制树脂壳体1固定在散热片10上时，能使散热板5紧贴在散热片10上。
实施方案4
图11～13分别对应于图6、9、10，是本发明实施方案4的电功率半导体装置结构的剖面图。如图3所示，在散热板5的通孔2周围形成了开口部6。如图11～13所示，在模制树脂壳体1的上表面上形成了凹陷部16，与散热板5的开口部6对应。为了缓解应力集中，凹陷部16的剖面形状最好略成U字型。
这样，在本实施方案4的电功率半导体装置中，模制树脂壳体1的形成凹陷部16部分的材料厚度薄。因此，可以用更小的紧固力来使模制树脂壳体1紧贴在散热片10上，所以，可以减小通孔2的孔径，进而减小装置的体积和重量。
另外，可以避免或抑制螺栓14的头部从模制树脂壳体1的上表面突出，所以，即使在图11～13所示的电功率半导体装置上重复配置控制基板，也能减小电功率半导体装置与控制基板之间的距离，进而减小装置的整体体积。
实施方案5
图14是本实施方案5的电功率半导体装置结构的俯视图，图中省略了模制树脂壳体1。另外，图15是本实施方案5的电功率半导体装置的电路图。另外，图16是本实施方案5的电功率半导体装置的斜视图。由图15可知，本实施方案5的电功率半导体装置具有IGBT20a、20b和续流二极管21a、21b。IGBT20a的集电极和续流二极管21a的负极连接在电极22P上。IGBT20b的发射极和续流二极管21b的正极连接在电极22N上。IGBT20a的发射极、IGBT20b的集电极、续流二极管21a的正极、以及续流二极管21b的负极连接在电极22O上。IGBT20a、20b的栅极分别连接在电极23a、23b上。
由图14可知，芯片IGBT20a和续流二极管21a用焊锡焊接在散热板5a的上表面上。另外，芯片IGBT20b和续流二极管21b用焊锡焊接在散热板5b的上表面上。
IGBT20a的集电极和续流二极管21a的负极形成在各芯片的底面。因此，IGBT20a的集电极和续流二极管21a的负极与散热板5a连接。而且，电极22P用焊锡焊接在散热板5a的上表面上。这样，IGBT20a的集电极和续流二极管21a的负极都通过散热板5a与电极22P连接。
另外，IGBT20b的集电极和续流二极管21b的负极形成在各芯片的底面上。因此，IGBT20b的集电极和续流二极管21b的负极与散热板5a连接。而且，电极20O用焊锡焊接在散热板5b的上表面上。这样，IGBT20b的集电极和续流二极管21b的负极都通过散热板5b与电极20O连接。
电极23a、22O与散热板5a的上表面之间，电极22N、23b与散热板5b的上表面之间都有几毫米左右的间隙。IGBT20a、20b的发射极和栅极，以及续流二极管21a、21b的正极形成在各芯片的上表面上。IGBT20a的栅极通过金属连线9连接在电极23a上。IGBT20a的发射极和续流二极管21a的正极通过金属连线9连接在电极22O上。IGBT20b的栅极过金属连线9连接在电极23b上。
IGBT20b的发射极和续流二极管21b的正极通过金属连线9连接在电极22N上。
由图14可知，散热板5a、5b以开口部6为中心大致对称。因为散热板5a、5b大致对称，所以，可以避免来自螺栓14的应力不均。另外，散热板5a与散热板5b之间有间隙24，用于确保绝缘。由图16可知，在模制树脂壳体1的上表面1T上形成了与间隙24对应的沟状凹陷部30。为了缓解应力集中，凹陷部30的剖面形状最好略成U字型。如图14所示，间隙24的上部没有配置金属连线9。因此，即使形成与间隙24对应的凹陷部30也可以确保绝缘。
这样，本实施方案5的电功率半导体装置，在模制树脂壳体1的上表面1T上形成了与间隙24对应的凹陷部30。因此，在图9、10所示的电功率半导体装置中，螺栓14的挤压容易使模制树脂壳体1变形。这样，可以用更小的紧固力使模制树脂壳1紧贴在散热片10上，所以，可以减小通孔2的孔径，进而减小装置的体积和重量。
图17、18是本实施方案5的变形例的俯视图和斜视图。由图17可知，散热板被分割成4张散热板51～54。散热板51～54以开口部6为中心大致对称。在相邻的散热板51～54之间有间隙24a、24b。
由图18可知，在模制树脂壳体1的上表面上形成了与间隙24a、24b对应的凹陷部30a、30b。
图19是上述实施方案1～5的变形例的俯视图。在上述实施方案1～5中，在模制树脂壳体1的大致中央部设置了一个通孔2，但也可以如图19所示，在模制树脂壳体1的非边缘部设置多个(此例中为两个)通孔2a、2b。图20是图19所示的电功率半导体装置结构的俯视图，图中省略了模制树脂壳体，图21是图20所示电功率半导体装置的电路图。如图20、21所示，电功率半导体装置具有：IGBT71～76、续流二极管81～86、以及电极P、N、U、V、W、G1～G6。
发明效果
本发明可以提供小型轻量、低成本、且生产率和耐振动性能优良的半导体装置。

Claims (13)

1.一种电功率半导体装置，包括：
散热板(5/5a，5b)，具有相互对置的第一主面(5T)和第二主面(5B)；
电功率半导体元件(7a，7b，8a，8b)，配置在所述第一主面上；
模制树脂壳体(1)，覆盖所述散热板及所述半导体元件，但露出所述第二主面，具有一个与所述第二主面并排的主面(1B)和与所述主面(1B)对置的另一主面(1T)；
以及至少一个通孔(2/2a，2b)，在所述模制树脂壳体的非边缘区域，避开所述电功率半导体元件及所述散热板，穿过所述模制树脂壳体的两个所述主面之间。
2.如权利要求1所述的电功率半导体装置，其特征在于，
在所述散热板的所述通孔周围设有开口部(6)。
3.如权利要求2所述的电功率半导体装置，其特征在于，
在所述主面(1T)上设有与所述开口部对应的凹陷部(16)。
4.如权利要求1所述的电功率半导体装置，其特征在于，
具有多个所述散热板(5a，5b)，所述多个散热板以所述通孔为中心对称。
5.如权利要求4所述的电功率半导体装置，其特征在于，
在所述主面(1T)上设有与所述散热板之间的间隙对应的沟状凹陷部(30)。
6.如权利要求3或5所述的电功率半导体装置，其特征在于，
所述凹陷部的剖面形状成U字型。
7.如权利要求1所述的电功率半导体装置，其特征在于，
所述模制树脂壳体的所述主面(1B)的中央突出，成弯曲状。
8.如权利要求1所述的电功率半导体装置，其特征在于，
所述模制树脂壳体材质的固化收缩或成形收缩的程度大于所述散热板材质的热收缩程度。
9.如权利要求8所述的电功率半导体装置，其特征在于，
所述模制树脂壳体材质的线膨胀率小于所述散热板材质的线膨胀率。
10.如权利要求1所述的电功率半导体装置，其特征在于，
还具有：
散热片(10)，与所述第二主面连接；压板(12)，与所述主面(1T)连接；以及螺栓(14)，穿过所述通孔，将夹着所述模制树脂壳体的所述散热片与所述压板固定。
11.如权利要求1所述的电功率半导体装置，其特征在于，
所述模制树脂壳体的所述主面(1T)的中央突出，成弯曲状。
12.如权利要求1所述的电功率半导体装置，其特征在于，
所述模制树脂壳体材质的固化收缩或成形收缩程度小于所述散热板材质的热收缩程度。
13.如权利要求1所述的电功率半导体装置，其特征在于，
还具有：散热片(10)，与所述第二主面接触；螺栓(14)，穿过所述通孔，将所述模制树脂壳体和所述散热片固定。
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JP3740117B2 (ja) 2006-02-01
DE10331335A1 (de) 2004-06-09
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