CN1215568C - 平板显示器及其制造方法 - Google Patents
平板显示器及其制造方法 Download PDFInfo
- Publication number
- CN1215568C CN1215568C CNB021058229A CN02105822A CN1215568C CN 1215568 C CN1215568 C CN 1215568C CN B021058229 A CNB021058229 A CN B021058229A CN 02105822 A CN02105822 A CN 02105822A CN 1215568 C CN1215568 C CN 1215568C
- Authority
- CN
- China
- Prior art keywords
- conductive pattern
- electrode
- semiconductor layer
- substrate
- pixel electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000012535 impurity Substances 0.000 claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 239000012212 insulator Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 19
- 238000009413 insulation Methods 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR19932/01 | 2001-04-13 | ||
KR10-2001-0019932A KR100437475B1 (ko) | 2001-04-13 | 2001-04-13 | 평판 디스플레이 장치용 표시 소자 제조 방법 |
KR19932/2001 | 2001-04-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1381898A CN1381898A (zh) | 2002-11-27 |
CN1215568C true CN1215568C (zh) | 2005-08-17 |
Family
ID=19708234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021058229A Expired - Lifetime CN1215568C (zh) | 2001-04-13 | 2002-04-11 | 平板显示器及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US6617203B2 (zh) |
KR (1) | KR100437475B1 (zh) |
CN (1) | CN1215568C (zh) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW413844B (en) * | 1998-11-26 | 2000-12-01 | Samsung Electronics Co Ltd | Manufacturing methods of thin film transistor array panels for liquid crystal displays and photolithography method of thin films |
KR100686228B1 (ko) * | 2000-03-13 | 2007-02-22 | 삼성전자주식회사 | 사진 식각용 장치 및 방법, 그리고 이를 이용한 액정 표시장치용 박막 트랜지스터 기판의 제조 방법 |
KR100437475B1 (ko) * | 2001-04-13 | 2004-06-23 | 삼성에스디아이 주식회사 | 평판 디스플레이 장치용 표시 소자 제조 방법 |
TWI305681B (en) * | 2002-11-22 | 2009-01-21 | Toppoly Optoelectronics Corp | Method for fabricating thin film transistor array and driving circuits |
KR100905473B1 (ko) * | 2002-12-03 | 2009-07-02 | 삼성전자주식회사 | 유기 이엘 표시판 및 그 제조 방법 |
KR100891989B1 (ko) * | 2002-12-11 | 2009-04-08 | 엘지디스플레이 주식회사 | 구동회로 일체형 액정표시장치용 박막 트랜지스터 제조방법 |
KR100595456B1 (ko) * | 2003-12-29 | 2006-06-30 | 엘지.필립스 엘시디 주식회사 | 액정표시소자의 제조방법 |
KR100615211B1 (ko) | 2004-02-26 | 2006-08-25 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시장치 및 그 제조방법 |
KR100635065B1 (ko) * | 2004-05-17 | 2006-10-16 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조방법 |
KR101043991B1 (ko) * | 2004-07-28 | 2011-06-24 | 엘지디스플레이 주식회사 | 액정표시소자 및 그 제조방법 |
KR101056013B1 (ko) * | 2004-08-03 | 2011-08-10 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판 제조방법 |
KR101043992B1 (ko) | 2004-08-12 | 2011-06-24 | 엘지디스플레이 주식회사 | 액정표시소자 및 그 제조방법 |
KR101037322B1 (ko) | 2004-08-13 | 2011-05-27 | 엘지디스플레이 주식회사 | 액정표시소자 및 그 제조방법 |
KR101048998B1 (ko) | 2004-08-26 | 2011-07-12 | 엘지디스플레이 주식회사 | 액정표시소자 및 그 제조방법 |
KR101048903B1 (ko) | 2004-08-26 | 2011-07-12 | 엘지디스플레이 주식회사 | 액정표시소자 및 그 제조방법 |
KR101073403B1 (ko) | 2004-09-09 | 2011-10-17 | 엘지디스플레이 주식회사 | 액정표시소자 및 그 제조방법 |
KR101050899B1 (ko) | 2004-09-09 | 2011-07-20 | 엘지디스플레이 주식회사 | 액정표시소자 및 그 제조방법 |
KR100659761B1 (ko) * | 2004-10-12 | 2006-12-19 | 삼성에스디아이 주식회사 | 반도체소자 및 그 제조방법 |
KR101146418B1 (ko) * | 2004-11-08 | 2012-05-17 | 엘지디스플레이 주식회사 | 폴리 실리콘형 액정 표시 장치용 어레이 기판 및 그 제조방법 |
KR101066489B1 (ko) * | 2004-11-12 | 2011-09-21 | 엘지디스플레이 주식회사 | 폴리형 박막 트랜지스터 기판 및 그 제조 방법 |
KR101192746B1 (ko) * | 2004-11-12 | 2012-10-18 | 엘지디스플레이 주식회사 | 폴리형 박막 트랜지스터 기판의 제조방법 |
KR101078360B1 (ko) | 2004-11-12 | 2011-10-31 | 엘지디스플레이 주식회사 | 폴리형 액정 표시 패널 및 그 제조 방법 |
KR101146522B1 (ko) | 2004-12-08 | 2012-05-25 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판 제조방법 |
KR101153297B1 (ko) | 2004-12-22 | 2012-06-07 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
KR101086487B1 (ko) | 2004-12-24 | 2011-11-25 | 엘지디스플레이 주식회사 | 폴리 박막 트랜지스터 기판 및 그 제조 방법 |
US7189991B2 (en) * | 2004-12-29 | 2007-03-13 | E. I. Du Pont De Nemours And Company | Electronic devices comprising conductive members that connect electrodes to other conductive members within a substrate and processes for forming the electronic devices |
KR101107252B1 (ko) | 2004-12-31 | 2012-01-19 | 엘지디스플레이 주식회사 | 일렉트로-루미네센스 표시 패널의 박막 트랜지스터 기판및 그 제조 방법 |
KR101125252B1 (ko) | 2004-12-31 | 2012-03-21 | 엘지디스플레이 주식회사 | 폴리 액정 표시 패널 및 그 제조 방법 |
KR101107251B1 (ko) | 2004-12-31 | 2012-01-19 | 엘지디스플레이 주식회사 | 폴리 박막 트랜지스터 기판 및 그 제조 방법 |
KR101108369B1 (ko) * | 2004-12-31 | 2012-01-30 | 엘지디스플레이 주식회사 | 폴리 실리콘형 액정 표시 장치용 어레이 기판 및 그 제조방법 |
KR101107712B1 (ko) * | 2005-02-28 | 2012-01-25 | 엘지디스플레이 주식회사 | 액정표시장치 |
KR101198127B1 (ko) | 2005-09-30 | 2012-11-12 | 엘지디스플레이 주식회사 | 액정표시장치와 그 제조방법 |
KR100739065B1 (ko) * | 2005-11-29 | 2007-07-12 | 삼성에스디아이 주식회사 | 유기 발광 표시장치 및 이의 제조 방법 |
KR20070063300A (ko) * | 2005-12-14 | 2007-06-19 | 삼성전자주식회사 | 유기 박막 트랜지스터 표시판 및 그 제조 방법 |
KR100978263B1 (ko) * | 2006-05-12 | 2010-08-26 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
KR101264688B1 (ko) * | 2006-06-23 | 2013-05-16 | 엘지디스플레이 주식회사 | 박막 패턴의 제조장치 및 방법 |
KR101250789B1 (ko) * | 2006-06-30 | 2013-04-08 | 엘지디스플레이 주식회사 | 액정표시장치의 제조방법 |
KR101117725B1 (ko) * | 2009-11-11 | 2012-03-07 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR101210146B1 (ko) | 2010-04-05 | 2012-12-07 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
KR102075529B1 (ko) * | 2013-05-29 | 2020-02-11 | 삼성디스플레이 주식회사 | 평판 표시 장치 및 이의 제조 방법 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3587537B2 (ja) * | 1992-12-09 | 2004-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2873660B2 (ja) * | 1994-01-08 | 1999-03-24 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
JP3678437B2 (ja) * | 1994-03-16 | 2005-08-03 | 株式会社日立製作所 | 液晶表示装置の製造方法および液晶表示装置 |
US6326248B1 (en) * | 1994-06-02 | 2001-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating semiconductor device |
JP3312083B2 (ja) * | 1994-06-13 | 2002-08-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP3675886B2 (ja) * | 1995-03-17 | 2005-07-27 | 株式会社半導体エネルギー研究所 | 薄膜半導体デバイスの作製方法 |
US5985708A (en) * | 1996-03-13 | 1999-11-16 | Kabushiki Kaisha Toshiba | Method of manufacturing vertical power device |
JP3527009B2 (ja) * | 1996-03-21 | 2004-05-17 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP3593212B2 (ja) * | 1996-04-27 | 2004-11-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP3525316B2 (ja) * | 1996-11-12 | 2004-05-10 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置 |
US6133075A (en) * | 1997-04-25 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
KR19990039940A (ko) * | 1997-11-15 | 1999-06-05 | 구자홍 | 박막트랜지스터 제조방법 |
GB9806609D0 (en) * | 1998-03-28 | 1998-05-27 | Philips Electronics Nv | Electronic devices comprising thin-film transistors |
JP3592535B2 (ja) * | 1998-07-16 | 2004-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6246070B1 (en) * | 1998-08-21 | 2001-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same |
JP4493741B2 (ja) * | 1998-09-04 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
CN1139837C (zh) * | 1998-10-01 | 2004-02-25 | 三星电子株式会社 | 液晶显示器用薄膜晶体管阵列基板及其制造方法 |
US6469317B1 (en) * | 1998-12-18 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
JP4641582B2 (ja) * | 1998-12-18 | 2011-03-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR100336897B1 (ko) * | 1998-12-30 | 2003-06-19 | 주식회사 현대 디스플레이 테크놀로지 | 박막트랜지스터액정표시소자의제조방법 |
WO2000054339A1 (fr) * | 1999-03-10 | 2000-09-14 | Matsushita Electric Industrial Co., Ltd. | Transistors a couches minces, flan, et procedes de production de ceux-ci |
US6281552B1 (en) * | 1999-03-23 | 2001-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having ldd regions |
EP1619534A3 (en) * | 1999-05-14 | 2006-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Google type display device |
US6545656B1 (en) * | 1999-05-14 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device in which a black display is performed by a reset signal during one sub-frame |
TW464915B (en) * | 1999-07-19 | 2001-11-21 | United Microelectronics Corp | Structure of multilayer thin-film coating passivation layer and the manufacturing method thereof |
US6563482B1 (en) * | 1999-07-21 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR100686228B1 (ko) * | 2000-03-13 | 2007-02-22 | 삼성전자주식회사 | 사진 식각용 장치 및 방법, 그리고 이를 이용한 액정 표시장치용 박막 트랜지스터 기판의 제조 방법 |
JP2001272929A (ja) * | 2000-03-24 | 2001-10-05 | Toshiba Corp | 平面表示装置用アレイ基板の製造方法 |
JP2001332741A (ja) * | 2000-05-25 | 2001-11-30 | Sony Corp | 薄膜トランジスタの製造方法 |
KR100495701B1 (ko) * | 2001-03-07 | 2005-06-14 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시장치의 제조방법 |
KR100437475B1 (ko) * | 2001-04-13 | 2004-06-23 | 삼성에스디아이 주식회사 | 평판 디스플레이 장치용 표시 소자 제조 방법 |
JP2002341355A (ja) * | 2001-05-16 | 2002-11-27 | Matsushita Electric Ind Co Ltd | 液晶表示装置の製造方法およびアレイ基板ならびに液晶表示装置 |
KR100441436B1 (ko) * | 2002-06-17 | 2004-07-21 | 삼성에스디아이 주식회사 | 투과율이 향상된 평판표시장치 및 그의 제조방법 |
US6692983B1 (en) * | 2002-08-01 | 2004-02-17 | Chih-Chiang Chen | Method of forming a color filter on a substrate having pixel driving elements |
-
2001
- 2001-04-13 KR KR10-2001-0019932A patent/KR100437475B1/ko active IP Right Grant
-
2002
- 2002-04-11 CN CNB021058229A patent/CN1215568C/zh not_active Expired - Lifetime
- 2002-04-15 US US10/121,676 patent/US6617203B2/en not_active Expired - Lifetime
-
2003
- 2003-03-19 US US10/390,719 patent/US6927464B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1381898A (zh) | 2002-11-27 |
US6927464B2 (en) | 2005-08-09 |
KR20020079196A (ko) | 2002-10-19 |
US20020151119A1 (en) | 2002-10-17 |
US6617203B2 (en) | 2003-09-09 |
KR100437475B1 (ko) | 2004-06-23 |
US20030181002A1 (en) | 2003-09-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1215568C (zh) | 平板显示器及其制造方法 | |
JP7058724B2 (ja) | Tft基板とその製造方法、及びoledパネルの製造方法 | |
CN1220268C (zh) | 平板显示器及其制造方法 | |
KR101102261B1 (ko) | 반도체 장치 | |
CN101043047B (zh) | 显示装置及其制造方法 | |
US20070152217A1 (en) | Pixel structure of active matrix organic light-emitting diode and method for fabricating the same | |
CN1455630A (zh) | 有机电致发光显示装置及其制造方法 | |
CN1716635A (zh) | 薄膜晶体管及其制备方法 | |
JP2001109405A (ja) | El表示装置 | |
JP2001109404A (ja) | El表示装置 | |
CN1455629A (zh) | 有机电致发光显示器件及其制造方法 | |
CN1708197A (zh) | 有机发光显示装置及其制造方法 | |
KR20100003612A (ko) | 트랜지스터의 제조방법 및 이를 이용한 유기전계발광표시장치의 제조방법 | |
CN1873989A (zh) | 薄膜晶体管以及制造薄膜晶体管基板的方法 | |
US7612377B2 (en) | Thin film transistor array panel with enhanced storage capacitors | |
CN101047199A (zh) | 有机电激发光显示元件及其制造方法 | |
CN1479559A (zh) | 有机电致发光显示装置及其制造方法 | |
CN1215567C (zh) | 平板显示器及其制造方法 | |
US20230157089A1 (en) | Display Apparatus | |
CN1324715C (zh) | 有源矩阵型有机电致发光显示装置及其制造方法 | |
WO2021227106A1 (zh) | 显示面板及其制作方法 | |
JP2001100655A (ja) | El表示装置 | |
KR100728129B1 (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
US6635504B2 (en) | Method of manufacturing organic EL display | |
CN1259807C (zh) | 光发射器以及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090109 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung SDI Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20090109 |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG MOBILE DISPLAY CO., LTD. Effective date: 20121018 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121018 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Mobile Display Co., Ltd. |
|
CX01 | Expiry of patent term |
Granted publication date: 20050817 |
|
CX01 | Expiry of patent term |