CN1166805A - 金属层用的化学机械抛光淤浆 - Google Patents
金属层用的化学机械抛光淤浆 Download PDFInfo
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- CN1166805A CN1166805A CN95196473A CN95196473A CN1166805A CN 1166805 A CN1166805 A CN 1166805A CN 95196473 A CN95196473 A CN 95196473A CN 95196473 A CN95196473 A CN 95196473A CN 1166805 A CN1166805 A CN 1166805A
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- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Materials Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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- Metallurgy (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
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Abstract
一种用于金属层化学机械抛光的淤浆,含有均匀分散在稳定的含水介质中的纯度高、细的金属氧化物粒子。
Description
本发明涉及一种用于半导体装置平面的化学机械抛光淤浆,更具体地,涉及一种用于抛光金属层的化学机械抛光淤浆。
半导体晶片通常包括一基片,如砷化硅或砷化镓晶片,在该晶片上形成了许多集成电路。集成电路通过基片上的图案形成区域和基片上的一些层化学地和物理地并入到基片中。这些层通常由具有导电性、绝缘性或半导体性质的各种材料制备。为了使装置具有高的成品率,关键的是从一种平的半导体晶片开始,因此对半导体晶片的一侧或部分进行抛光通常是必要的。如果装置制备的加工步骤在不均匀的晶片表面上进行,则可能产生许多问题,这些问题可能导致大量不能操作的装置。例如,在制备现代的半导体集成电路时,必要的是在先前已形成的结构上形成导电线或类似的结构。但是,先前的表面形成通常使晶片的顶表面外形高度不规则,具有凸起、不平整高度的区域、凹坑、沟槽和其它类似类型的表面不规则性。结果是,为了确保照相平版印刷期间的充分的聚焦深度,这些平面的完全平面化是必要的,以及在制备过程的多个工序中除去任何不规则性和表面缺陷也是必要的。尽管已有几种保证晶片表面平面性的抛光技术,但是采用化学机械平面化的方法或抛光技术已广泛用在装置制备的各个工序中使晶片的表面平面化,以提高产率、性能和可靠性。通常,化学机械抛光(“CMP”)包括在受控的下降的压力下的晶片的圆周运动,抛光垫被常规的抛光淤浆饱和。关于化学机械抛光的更详细的解释,请参见美国专利4,671,851、4,910,155和4,944,836,将这些专利说明书引入本文作参考。
可获得的CMP氧化物方法中用的典型的抛光淤浆含有研磨剂,如在酸性或碱性溶液中的二氧化硅或氧化铝。例如,美国专利5,245,790(属于Jerbic)描述了一种用于半导体晶片的化学机械抛光的技术,该技术使用超声能源和KOH溶液中的基于二氧化硅的淤浆。属于Yu等人的美国专利5,244,534公开了一种在绝缘层内形成导电插件的方法。该方法得到了一种材料(如钨)的插件,该带有绝缘层的插件比用常规的插件形成技术而得到的表面更平整。含有研磨粒子(如Al2O3)和蚀刻剂(如H2O2)和KOH或NH4OH的淤浆用在第一步CMP工序中以便以一可预测的速率除去钨,同时除去极少量的绝缘层。第二步CMP工序利用一种由研磨剂(如Al2O3)和氧化组分(由H2O2和H2O组成)组成的淤浆。类似地,属于Yu等人的美国专利5,209,816公开了一种CMP淤浆,该淤浆包括H3PO4、H2O2、H2O和固体研磨剂。属于Medellim的美国专利5,157,876和5,137,544公开了半导体晶片抛光用的无应力的CMP试剂,该试剂包括一种水、胶体二氧化硅和含有次氯酸钠的漂白剂的混合物。美国专利4,956,313,属于Cote等人,公开了一种由Al2O3粒子、去离子水、碱和氧化剂构成的淤浆。
由于CMP已被成功地用于抛光氧化物表面许多年,半导体工业品的最近的趋势是利用CMP技术和淤浆来抛光金属层。但是,即使一些淤浆和抛光技术已被直接地用在金属层、薄膜和插件,如钨、铝和铜,装置制造用的这些金属的化学机械抛光还未被很好地理解或开发。结果是,在金属层上应用常规的二氧化硅或氧化铝淤浆导致不可接受的抛光性能和产生了质量差的装置。因此,存在一种改进的化学机械抛光技术和改进的CMP淤浆的需要,以提供均一的金属层,没有不需要的污染物和表面缺陷。
本发明涉及半导体装置的金属层抛光用的CMP淤浆,该淤浆含有纯度高的、均匀地分散在稳定的含水介质中的细金属氧化物粒子。该粒子的表面积约为40m2/g~430m2/g,聚集粒径分布(aggregate size distribution)小于约1.0微米,平均聚集直径小于约0.4微米,以及一个足以排斥和克服粒子间的范德华力的力。在一个优选的实施方案中,金属氧化物粒子还有一个大于约±10毫伏的最大Z电位。还公开了一种周本发明的抛光淤浆抛光钨层的方法。
图1是一透射电子显微图,它以50,000倍的放大倍数示出了本发明的热解法的氧化铝(fumed alumina)的金属氧化物粒子。
图2是本发明的抛光淤浆用的热解法氧化铝的金属氧化物粒子的聚集粒径分布。
图3是本发明的抛光淤浆用的热解法二氧化硅(气相二氧化硅)的金属氧化物粒子的聚集粒径分布。
图4示出了X轴方向上的pH值与Y轴方向上的Z电位(毫伏)的理论曲线。
图5示出了粒子组成对一系列使用本发明的抛光淤浆的晶片的钨的抛光速率和对热氧化物的选择性的影响。X轴表示晶片数,Y轴表示钨的抛光速率(/分钟)。
图6示出了粒子结构、相态和固含量对一系列利用本发明的抛光淤浆的晶片的钨抛光速率的影响。X轴表示晶片数,Y轴表示钨的抛光速率(/分钟)。
图7示出了一系列利用本发明的抛光淤浆的晶片的铝的抛光速率和对热氧化物的选择性。X轴表示晶片数,Y轴表示铝的抛光速率(/分钟)。
图8通过绘制沉淀物的量与时间的函数关系图,示出了聚集粒径分布和Z电位对胶体稳定性的影响。
本发明涉及含有均匀分散在含水的介质中的高纯、细金属氧化物粒子的化学机械抛光淤浆。本发明的粒子与现有技术的“研磨粒子”的区别在于它具有约40-430m2/g的表面积、小于1.0微米的聚集粒径分布、小于约0.4微米的平均聚集直径和一个足以排斥和克服粒子间范德华力的力。用于说明,图1是本发明的淤浆中的热解法氧化铝的金属氧化物粒子的TEM(透射电子显微图)。
粒子的表面积,通过S.Brunauer,P.H.Emmet和I.Teller,在美国化学学会杂志(J.Am.Chemical Society),第60卷,第309页(1938)的氮气吸附法测定,通常称为BET,一般在约40~430m2/g的范围内。根据所需的研磨度,粒子可占淤浆的0.5%~55%。而金属氧化物粒子的磨耗是粒子的组成、结晶度和结晶相态(如r-氧化铝或α-氧化铝)的函数。为了达到所需的选择性和抛光率,现已发现最适宜的表面积和填充量将随特定的抛光淤浆所选择的细金属氧化物粒子、粒子的结晶度和相态而变化。在一个需要高度选择性的实施方案中,小于12%(重量)的具有约70~170m2/g的表面积的氧化铝粒子的固体填充量是优选的。对于表面积较低,即小于70m2/g,氧化铝粒子的固体填充量小于7%是优选的。类似地当需要低选择性时,业已发现当细金属氧化物粒子是热解法二氧化硅时,表面积为40~250m2/g的粒子应以约0.5%~20%(重量)存在。
本发明的金属氧化物粒子为高纯度的并具有小于约1.0微米的聚集粒径分布以避免抛光过程中的擦痕、凹痕、裂痕和其它表面缺陷。举例来说,图2和3分别示出了对于热解法氧化铝和二氧化硅的本发明的金属氧化物粒子的聚集粒径分布。高纯度的意思是总杂质含量通常小于1%,并优选小于0.01%(即100ppm)。杂质的来源通常包括原料杂质和痕量的加工污染物。粒子的聚集粒径指熔融初级粒子(单个的熔融球体)的枝状的、三维链的测量。应注意的是尽管通常认为术语“粒子”“初级粒子”和“聚集粒子”可以互换,但这种引证是不准确的和使人误解的。例如,“粒径”的通常意义实际上是“聚集粒子或聚集体”而不是“初级粒子”的平均最大尺寸。因此,对本领域普通技术人员来说,对聚集体和初级粒子进行仔细的评价和辨别是重要的。
本发明中确定聚集粒径分布的方法是透射电子显微镜(TEM)。该方法中,金属氧化物粒子样品分散在液体介质中直到附聚物已转换为聚集体。然后调节其浓度直到分散的聚集体在TEM栅格示出。然后使用由KontronInstruments(Everett,MA)制备的影像分析***使栅格上的多个场成像并贮存在录像磁带上直到成像并贮存了1000以上的聚集体。然后将贮存的图像送入带有构架咬合取样器(frame-grabber board)的影像分析计算机以进一步处理,如,清除偏差、调节背景和规范化图像。测量双场中的单个聚集体的多个粒子参数,如聚集粒径,采用ASTM D3849-89中所述的已知技术测定。测量数据可以单个记录或以统计的或频率分布的形式记录。
为了使本发明的抛光淤浆成为常规淤浆的有效替代物,重要的是金属氧化物粒子的聚集体均匀分布在稳定的含水介质中。均匀分散的意思是聚集体是分离的并良好地分散在整个介质中。稳定的意思通常是聚集体不会再附聚及沉积(即,形成硬的、稠密的沉淀物)。在一个优选的实施方案中,聚集体保持稳定至少约3个月。已进一步发现,达到淤浆稳定性的重要之处在于本发明的金属氧化物粒子,除具有小于1.0微米的聚集粒径分布外,还具有小于约0.4微米的平均聚集直径,并且本发明的粒子还具有一个足以排斥和克服粒子间的范德华吸引力的力。平均聚集直径指当使用TEM影像分析时的平均等效球体直径,即,基于聚集体的横截面积。力是指金属氧化物粒子的表面位势或水合力必须足以排斥和克服粒子间的范德华吸引力。
在一个优选的实施例中,金属氧化物粒子的平均聚集粒径分布小于0.3微米并且其最大Z电势大于±10毫伏。Z电势(ζ)是在液体中在剪切平面和超出双电层的范围之外的液体主体间测量的电位差。如图4所示,Z电势取决于含水介质的pH。对于给定的金属氧化物粒子组合物来说,等电点定义为Z电势等于零处的pH。当pH从等电点持续增加或减小时,表面正电荷或负电荷分别增加。当pH持续增加或减小时,表面电荷将到达一渐近线,该渐近线被称为最大Z电位。应注意的是,最大Z电位和等电点是金属氧化物组合物的函数,最大Z电位可以受加入到含水介质中的盐的影响。有关更详细的Z电位的讨论,请看R.J.Hunter,胶体科学中的Z电位(Zeta PotentialinColloid Science)(Academic Press 1981)。
尽管不能直接测量Z电位,但Z电位可以通过多种已知技术(如电泳、动电声振幅)和分析技术(包括超声振动电位)测量。本发明中,所指的Z电位通过测量动电声振幅而确定,采用Matec MBS-8000仪器进行(从Matec应用科学公司,Hopkington,MA买到)。
在另一个实施方案中,氧化组分可以被加入到抛光淤浆中以将金属层氧化成其相应的氧化物。例如,在本发明中,用氧化组分将金属层氧化成其相应的氧化物,如将钨氧化成氧化钨。对层进行机械抛光以将氧化钨从层上除去。尽管可使用多种氧化组分,优选的组分包括氧化性金属盐、氧化性金属络合物、铁盐如硝酸盐、硫酸盐、EDTA、柠檬酸盐、铁***等、铝盐、钠盐、钾盐、铵盐、季铵盐、鏻盐、过氧化物、氯酸盐、过氯酸盐、高锰酸盐、过硫酸盐及其混合物。氧化组分通常以足以保证金属层的快速氧化,同时平衡淤浆中的机械和化学抛光组分的量存在于淤浆中。另外,现已发现,氧化组分的浓度和抛光淤浆的胶体稳定性之间存在着重要的关系。因此,氧化组分通常以约0.5%~15%(重量),优选以1%~7%(重量)的范围存在于淤浆中。
为了进一步稳定含有氧化组分的抛光淤浆氧化组分的抗沉淀、絮凝和分解的能力,可以使用多种添加剂,如表面活性剂、聚合物稳定剂或其它的表面活性分散剂。用于本发明中的适合的表面活性剂的许多例子公开在,如kirk-Othmer,化工百科全书,第三版,第22卷(John Wiley&Sons,1983);Sislet&Wood,表面活性剂百科全书(化工出版公司,1964)以及可得到的生产文献,包括如McCutcheon′s Emulsifiers&Detergents,北美和国际版本(McCutcheon Division,MC出版公司1991);Ash,表面活性剂的百科全书简本(化学出版有限公司,1989);Ash,每个化工技师想知道的是有关乳化剂和润湿剂(What Every Chemical Technologist Wants to Knowabout...Emulsifier and Wetting Agents),I卷(化工出版有限公司,1988),Tadros,表面活性剂(Academic Press,1984);Napper,胶体分散的聚合物稳定(Polymeric Stabilization of Colloidal Dispersion)(Academic Press,1983);以及Rosen,表面活性剂和界面现象(Surfactants&Interfacial Phenomena),第2版(John Wiley&Sons,1989),将上面所有这些文献引入本文作参考。在一个实施方案中,发现由聚二甲基硅氧烷和聚氧化烯醚的共聚物构成的表面活性剂是合适的。
通常,本发明中所用的添加剂(如表面活性剂)的量应足以达到淤浆的有效立体稳定性,并通常根据所选的特定表面活性剂和金属氧化物粒子的表面性质而变化。例如,如果所选的表面活性剂的用量不足,则它对稳定性没有或影响不大。另一方面,过多的表面活性剂将导致淤浆中不需要的起泡和/或絮凝。因此,添加剂(如表面活性剂)通常以约0.001%~10%(重量)存在。此外,也可以采用已知技术将添加剂直接加入到淤浆中或处理在金属氧化物粒子表面上。在另一个例子中,调整添加剂的量以达到抛光淤浆中所需的浓度。
本发明的金属氧化物粒子通常是沉淀的氧化铝、热解法二氧化硅或热解法氧化铝并优选是热解法二氧化硅或热解法氧化铝。热解法二氧化硅及氧化铝的制备是有许多文献记录的方法,包括合适的原料蒸气,如SiCl4或ACl3,在H2和O2的火焰中的水解。大致呈球形的熔融粒子在燃烧过程中形成,其直径通过工艺参数而变化。这些热解法二氧化硅或氧化铝的熔融球体,通常称为初级粒子,在其接触点进行碰撞彼此互相融合形成枝状的、三维链状的聚集体。需要打开聚集体的力是相当大的且通常认为是不可逆的。在冷却和收集期间,聚集体进行进一步碰撞而导致一些机械缠绕以形成附聚体。附聚体被认为是通过范德华力松散地结合在一起,并且通过在适宜的介质中的适当分散可以是可逆的,即去附聚化。
沉淀的金属氧化物粒子可以使用常规的技术制备并且通常是在高盐含量、酸或其它凝结剂的影响下从含水介质中所需的粒子的凝结而形成。粒子通过本领域普通技术人员已知的常规技术进行过滤、洗涤、干燥并从其它反应产物的剩余物中分离。
一旦制备完,将金属氧化物缓慢加入到去离子水中以形成胶体分散液。使用常规技术使分散液进行高剪切混合而制备淤浆。从等电点开始调整淤浆的pH以最大化胶体的稳定性。本发明的抛光淤浆可以用作一单元***(onepackage system)(在稳定的含水介质中金属氧化物粒子和氧化组分,如果需要)或两单元***(第一单元由含水介质中的金属氧化物粒子构成,第二单元由氧化组分构成),采用适宜用在所需的晶片金属层的标准抛光设备进行。当在特定的金属氧化物粒子存在下氧化组分随时间分解或水解时,采用两单元***。在两单元***中,可以恰好在抛光前将氧化组分加入到淤浆中。
业已发现,本发明的抛光淤浆可以以所需的抛光率提供金属层有效的抛光,同时减少了表面缺陷和缺点。下面对本发明的淤浆进行了非限制性的举例。实施例1
制备两种抛光淤浆。第一种淤浆由3%重量的热解法氧化铝、5%重量的硝酸铁及剩余重量的去离子水组成。第二种淤浆由3%重量的热解法二氧化硅、5%重量的硝酸铁和剩余重量的去离子水组成。两种淤浆的其它性质示于表I。用这两种淤浆对厚度约7500A的钨层进行化学-机械抛光。抛光条件和性能结果示于表II。
表I
淤浆基 表面积 聚集粒径 最大Z电位 相态
(m2/g) (nm) (mV)热解法氧化铝 55 86 >+30 80%γ热解法二氧化硅 90 109 >+12 非晶态
表II淤浆基 压力 流动速度 平面速度 锭子速度 抛光速率 选择性1 质量2
(磅/英寸2)(ml/分钟) (转/分) (转/分) (/分)热解法 5 200 50 50 3000 110∶1 高氧化铝热解法 5 200 50 50 2000 10∶1 高二氧化硅
(注1.热氧化物;注2.高=小于10缺陷/晶片)
从表II可以看出,并进一步示于图5中,本发明的两种淤浆在达到合格的抛光速率和高质量的晶片表面均是有效的。而且,可以看出金属氧化物粒子的组成及其相态对钨层的抛光速率和选择性(即钨和热氧化物之间的抛光速率比)有影响。结果是,钨层抛光所选用的具体金属氧化物将取决于所需的选择性和抛光速率。实施例2
为了对比,制备含有8%重量的工业氧化铝、5%重量的硝酸铁和剩余重量的去离子水的常规淤浆。用该淤浆对厚度约7500的钨层进行化学机械抛光。在与实施例1类似的抛光条件下,含工业氧化铝的淤浆的抛光速率为750/分钟,并且晶片质量差。用含工业氧化铝的淤浆所得到的抛光速率对于大多数抛光用途是不合格的。实施例3
制备五种抛光淤浆以研究粒子结构和固含量对热解法氧化铝淤浆的抛光性能的影响。制备含有8%重量的热解法氧化铝、5%重量的硝酸铁和剩余重量的去离子水的第一、第二和第三种淤浆以检查在侵蚀性的抛光条件下,即高压、高平面速度(table speed)、高固体填充量下粒子的结构和结晶性的影响。制备含有3%重量热解法氧化铝、5%重量硝酸铁和剩余重量的去离子水的第四和第五淤浆以检查在较低的侵蚀性抛光条件下,即低压、低平面速度和低固体填充量下粒子结构和结晶性的影响。淤浆的其它性能示于表III中。用五种淤浆来对厚度约7500的钨层进行化学机械抛光。抛光条件和性能结果示于表IV中。
表III
淤浆 表面积 聚集粒径 最大Z电位 相态
(m2/g) (nm) (mV)
1 55 86 +20-35 80%γ
2 85 88 >+30 40%γ
3 100 87 >+20 20%γ
4 55 86 >+30 80%γ
5 100 87 >+20 20%γ
表IV淤浆 压力 流动速度 平面速度 锭子速度 抛光速率 选择性1 质量2
(磅/英寸2)(ml/分钟) (转/分) (转/分) (/分)1 9 200 100 25 4850 50∶1 低2 9 200 100 25 3900 110∶1 低3 9 200 100 25 3700 NA 高4 6 200 50 50 3100 NA 高5 6 200 50 50 600 NA 高
(注1.热氧化物;注2.高=小于10缺陷/晶片;低=大于100缺陷/晶片)
在淤浆1-3的侵蚀性抛光条件下,业已发现热解法氧化铝粒子的相态和结构(即表面积)对选择性(即钨和热氧化物的抛光速率比)和表面质量有显著的影响,而对抛光速率的影响不太显著,如表IV所示,并进一步在图6中作了描述。在淤浆4和5的较低侵蚀性条件下,相态和结构对抛光速率和表面质量有显著的影响。例如,用淤浆3(8%填充量)、4(3%填充量)和5(3%填充量)抛光可产生质量高的晶片。但是,对高表面积的氧化铝需要较高的固体填充量以获得合适的抛光速率。另一方面,淤浆1(8%填充量)和2(8%填充量),尽管获得很高的抛光速率,但晶片表面质量差。尽管未被完全理解,但重要的是认识到,如本文所说明的,淤浆的组成和细金属氧化物粒子的结构(即表面积、聚集尺寸和直径、结晶度和结晶相)的相互关系对得到有效的抛光淤浆是至关重要的。实施例4
制备含有8%重量的热解法二氧化硅、5%重量的硝酸铁和剩余重量的去离子水的抛光淤浆。淤浆的其它性质示于表V。用该淤浆对厚度约7500A的铝层进行化学机械抛光。抛光条件和性能结果示于表VI。
表V粒子组成 表面积(m2/g) 聚集粒径(纳米) 最大Z电位(毫伏) 相态热解法二氧化硅 90 109 -+12 非晶态
表VI淤浆 压力 流动速度 平面速度 锭子速度 抛光速率 选择性1 质量2
(磅/英寸2)(ml/分钟) (转/分) (转/分) (/分)热解法二 9 200 50 25 2932 80∶1 高氧化硅
(注1.热氧化物;注2.高=小于10缺陷/晶片)
如表VI所示并进一步示出在图7中,本发明的抛光淤浆在得到对铝层和晶片的合格的抛光速率和高的表面质量是有效的。实施例5
制备两种淤浆来说明聚集粒径分布和最大Z电位对胶体稳定性的影响。第一种淤浆含有8%重量的本发明所述的热解法氧化铝、5%重量的硝酸铁和剩余重量的去离子水。第二种淤浆含有8%重量的市购的商标名为UltraloxM100的沉淀的氧化铝。淤浆的其它性能列于表VII。
表VII
淤浆 表面积(m2/g) 平均聚集直径(纳米) 最大Z电位(毫伏)
1 55 94.3 +32
2 NA 450 +10
表8示出了各种淤浆中金属氧化物粒子经过24小时产生沉淀的量。采用由Byk Gardner,Inc制造的Dynometer仪测量粒子。可以注意到,本发明的淤浆1中未检测到沉淀。另一方面,市购的氧化铝的淤浆2在24小时期间沉淀持续增多。到24小时时,氧化铝主体已沉淀出来而形成稠密的硬饼。在没有另外的步骤下此时使用淤浆2来再分散饼块并稳定淤浆,淤浆2获得较低的抛光速率并在晶片上产生明显的擦痕,从而产生质量差的晶片。
如本文所描述,业已发现本发明的抛光淤浆特别用在化学机械平面化上以除去不平整的外形、材料层、表面缺陷(包括擦痕、粗糙或污染物粒子如脏物或尘埃)。结果是,使用该淤浆的半导体工艺在表面质量、装置可靠性和产率方面与常规的蚀刻技术相比获得了改进。尽管该细金属氧化物粒子针对于氧化铝和二氧化硅,应理解的是,本文的说明可适用于其它的细金属氧化物粒子(如氧化锗、氧化铈、氧化钛等)。而且,可用金属氧化物粒子来抛光其它的金属表面(如铜和钛)以及底层(如钛、氮化钛和钛钨)。
还应理解的是,本发明不限于本文所列出和描述的具体实施方案,在不偏离本发明的范围和精神下,可作出多种变化和改型。
Claims (54)
1.一种金属层抛光用的化学机械抛光淤浆,包括:
均匀分散在含水介质中的高纯、细金属氧化物粒子,它具有约40~430m2/g的表面积、小于约1.0微米的聚集粒径分布、小于约0.4微米的平均聚集直径和一个足以排斥和克服粒子间范德华力的力,其中所述的淤浆是胶体稳定的。
2.权利要求1所述的淤浆,其中所述的粒子以约0.5%~55%(重量)存在。
3.权利要求1的淤浆,其中所述的粒子包括氧化铝。
4.权利要求3的淤浆,其中所述的粒子表面积约小于70m2/g,并且以约小于7%重量的范围存在。
5.权利要求3的淤浆,其中所述的淤浆的表面积约70~170m2/g,并且以约小于12%重量的范围存在于所述的淤浆中。
6.权利要求3、4或5的淤浆,其中所述的氧化铝是沉淀的氧化铝或热解法氧化铝。
7.权利要求1的淤浆,其中所述的粒子包括热解法二氧化硅。
8.权利要求7的淤浆,其中所述的粒子的表面积约40~250m2/g,并且以约0.5~20%重量的范围存在于所述的淤浆中。
9.权利要求1的淤浆,其中所述的粒子的最大Z电位约大于±10毫伏。
10.权利要求1的淤浆,其中所述的淤浆还含有一种氧化组分。
11.权利要求10的淤浆,其中所述的氧化组分是一种氧化性金属盐。
12.权利要求10的淤浆,其中所述的氧化组分是一种氧化性金属络合物。
13.权利要求10的淤浆,其中所述的氧化组分选自:铁盐、铝盐、钠盐、钾盐、铵盐、季铵盐、鏻盐、过氧化物、氯酸盐、高氯酸盐、高锰酸盐、过硫酸盐及其混合物。
14.权利要求1的淤浆,其中所述的淤浆还含有一种表面活性剂。
15.权利要求14的淤浆,其中所述的表面活性剂选自:非离子表面活性剂、阴离子表面活性剂、阳离子表面活性剂、两性表面活性剂及其混合物。
16.权利要求14的淤浆,其中所述的表面活性剂选自:聚烷基硅氧烷、聚芳基硅氧烷、聚氧化烯醚及其混合物和共聚物。
17.一种用于化学机械抛光底物的金属层的方法,该方法包括下列步骤:
a)提供一种化学机械抛光淤浆,该淤浆含有均匀分散在含水介质中的高纯、细的金属氧化物粒子,该粒子的表面积为约40~430m2/g、聚集粒径分布约小于1.0微米、平均粒径约小于0.4微米以及一个足以排斥和克服粒子间范德华力的力,其中所述的淤浆是稳定的;以及
(b)用所述的淤浆对半导体基片上的金属层进行化学机械抛光。
18.权利要求17的方法,其中所述的金属层选自:钨、铝、铜、钛及其合金。
19.权利要求18的方法,其中所述的金属层是钨。
20.权利要求19的方法,其中所述的钨层还含有至少一个底层,该底层选自:钛、氮化钛、钛钨和其混合物。
21.权利要求17的方法,其中所述的粒子以约0.5%~55%重量的范围存在。
22.权利要求17的方法,其中所述的粒子包括氧化铝。
23.权利要求22的方法,其中所述的粒子的表面积约小于70m2/g,并且以约小于7%重量的范围存在于所述的淤浆中。
24.权利要求22的方法,其中所述的粒子的表面积为约70~170mn2/g,并且以约小于12%重量的范围存在于所述的淤浆中。
25.权利要求22、23或24的方法,其中所述的氧化铝是沉淀的氧化铝或热解法氧化铝。
26.权利要求17的方法,其中所述的粒子包括热解法二氧化硅。
27.权利要求26的方法,其中所述的粒子的表面积为约40~250m2/g,并且以约0.5~20%重量的范围存在于所述的淤浆中。
28.权利要求17的方法,其中所述的粒子的最大Z电位大于约±10毫伏。
29.权利要求17的方法,其中所述的淤浆还含有一种氧化组分。
30.权利要求29的方法,其中所述的氧化组分是一种氧化性金属盐。
31.权利要求29的方法,其中所述的氧化组分是一种氧化性金属络合物。
32.权利要求29的方法,其中所述的氧化组分选自:铁盐、铝盐、钠盐、钾盐、铵盐、季铵盐、鏻盐、过氧化物、氯酸盐、过氯酸盐、高锰酸盐、过硫酸盐及其混合物。
33.权利要求17的方法,其中所述的淤浆还含有一种表面活性剂。
34.权利要求33的方法,其中所述的表面活性剂选自:非离子表面活性剂、阴离子表面活性剂、阳离子表面活性剂、两性表面活性剂及其混合物。
35.权利要求33的方法,其中所述的表面活性剂选自:聚烷基硅氧烷、聚芳基硅氧烷、聚氧化烯醚及其混合物和共聚物。
36.权利要求17的方法,其中500K和10,000K之间的钨层在步骤(b)中被除去。
37.一种用于抛光金属层的化学机械抛光淤浆,包括均匀分散在含水介质中的高纯、细的金属氧化物粒子,该粒子具有约40~430m2/g的表面积、小于约1.0微米的聚集粒径分布、小于约0.4微米的平均聚集直径和一个足以排斥和克服粒子间范德华力的力,和一种氧化组分,其中所述的淤浆是胶体稳定的。
38.权利要求37的淤浆,其中所述的粒子以约0.5~55%的范围存在。
39.权利要求37的淤浆,其中所述的粒子包括氧化铝。
40.权利要求39的淤浆,其中所述的粒子的表面积约小于70m2/g,并以约小于7%重量的范围存在于所述的淤浆中。
41.权利要求39的淤浆,其中所述的粒子的表面积为约70~170m2/g,并以约小于12%重量的范围存在于所述的淤浆中。
42.权利要求39、40或41的淤浆,其中所述的氧化铝为沉淀的氧化铝或热解法氧化铝。
43.权利要求37的淤浆,其中所述的粒子包括热解法二氧化硅。
44.权利要求43的淤浆,其中所述的粒子的表面积为约40~250m2/g,并且以约0.5~20%重量的范围存在于所述的淤浆中。
45.权利要求37的淤浆,其中所述的粒子的最大Z电位大于约±10毫伏。
46.权利要求37的淤浆,其中所述的氧化组分是一种氧化性金属盐。
47.权利要求37的淤浆,其中所述的氧化组分是一种氧化性金属络合物。
48.权利要求37的淤浆,其中所述的氧化组分选自:铁盐、铝盐、钠盐、钾盐、铵盐、季铵盐、鏻盐、过氧化物、氯酸盐、过氯酸盐、高锰酸盐、过硫酸盐及其混合物。
49.权利要求37的淤浆,其中所述的淤浆还含有一种添加剂,其量足以阻止氧化组分的分解和保持淤浆的胶体稳定性。
50.权利要求49的淤浆,其中所述的添加剂是一种表面活性剂。
51.权利要求49的淤浆,其中所述的表面活性剂选自:非离子表面活性剂、阴离子表面活性剂、阳离子表面活性剂、两性表面活性剂及其混合物。
52.权利要求50的淤浆,其中所述的表面活性剂选自:聚烷基硅氧烷、聚芳基硅氧烷、聚氧化烯醚及其混合物和共聚物。
53.权利要求37的淤浆,其中所述的金属氧化物粒子是热解法二氧化硅,且所述的氧化组分是硝酸铁。
54.权利要求37的淤浆,其中所述的金属氧化物粒子是含有至少50%γ-相的热解法氧化铝,且所述的氧化组分是硝酸铁。
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- 1995-10-03 EP EP95306994A patent/EP0708160B1/en not_active Expired - Lifetime
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- 1995-10-03 DE DE0708160T patent/DE708160T1/de active Pending
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CN106133881A (zh) * | 2014-03-21 | 2016-11-16 | 嘉柏微电子材料股份公司 | 用于钨磨光的组合物 |
CN106133881B (zh) * | 2014-03-21 | 2019-01-08 | 嘉柏微电子材料股份公司 | 用于钨磨光的组合物 |
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IL115454A (en) | 2000-02-17 |
DE69527406D1 (de) | 2002-08-22 |
DE69527406T2 (de) | 2003-03-13 |
JP3377892B2 (ja) | 2003-02-17 |
JPH08197414A (ja) | 1996-08-06 |
MY112735A (en) | 2001-08-30 |
EP0708160A3 (en) | 1997-06-11 |
US5527423A (en) | 1996-06-18 |
ES2159495T3 (es) | 2003-03-16 |
CN1074035C (zh) | 2001-10-31 |
IL115454A0 (en) | 1995-12-31 |
EP0708160B1 (en) | 2002-07-17 |
HK1004666A1 (en) | 1998-12-04 |
DE708160T1 (de) | 2001-10-11 |
ATE220711T1 (de) | 2002-08-15 |
WO1996011082A1 (en) | 1996-04-18 |
ES2159495T1 (es) | 2001-10-16 |
EP0708160A2 (en) | 1996-04-24 |
AU3549495A (en) | 1996-05-02 |
KR100362141B1 (ko) | 2003-02-11 |
KR960013577A (ko) | 1996-05-22 |
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