CN114956826A - 一种(TiNbCrWTa)Cx高熵陶瓷及其制备方法 - Google Patents
一种(TiNbCrWTa)Cx高熵陶瓷及其制备方法 Download PDFInfo
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Abstract
本发明涉及一种(TiNbCrWTa)Cx高熵陶瓷及其制备方法,属于高熵碳化物陶瓷技术领域,所述高熵陶瓷为单相面心立方结构的陶瓷;所述制备方法包括:S1:将一种金属和四种碳化物原料粉末混合均匀,得到混合粉末A;S2:将混合粉末A放入导热性能良好的石墨模具中进行固相反应烧结,得到高熵陶瓷(TiNbCrWTa)Cx。本发明选用Ti粉和Cr3C2粉相结合,既降低了烧结过程的烧结温度,又保证了高熵碳化物的碳源来源,还有利于各元素的扩散,使最终产物有着较高的致密度和均匀性,最终形成具有单相的固溶体,制备的高熵陶瓷具有优异的机械、物理和化学性能。
Description
技术领域
本发明涉及一种(TiNbCrWTa)Cx高熵陶瓷及其制备方法,属于高熵碳化物陶瓷技术领域。
背景技术
与金属材料相比,陶瓷材料因优异的机械、物理和化学性能,例如力学性能上的高硬度、强度和耐磨性,化学性能上的高温稳定性、低的导热率和导电性而引起了广泛的研究兴趣。过渡金属碳化物是一类具有高熔点和优异的力学性能的化合物材料,这类材料在机械、航空和冶金等方面具有广泛的应用。“高熵”概念的出现提供了新的材料设计理论,成为材料研究领域的热点之一,随着高熵合金十几年的深入发展,“高熵”的概念开始扩展到过渡金属碳化物领域。
在现有技术中,根据使用原材料的类别,高熵碳化物块体的制备方法分为以金属碳化物为原料的碳化物加工法、以金属氧化物和石墨为原料进行碳热还原反应的氧化工艺、以金属粉末和石墨为原料的元素法。但研究表明碳化物加工法所需温度较高,且最终产物的相对密度较低;采用碳热还原制备的高熵碳化物由于碳粉的不规则形貌使其不易分散,进而影响均匀性和致密性,且容易残留氧元素;采用元素法制备由于金属粉末和碳粉粒径差异较大,导致元素分布不均匀,因而会影响产物的均匀性。对高熵碳化物烧结工艺和结构性能的影响主要是碳源,因此需要从原料粉末的碳源入手,进一步改进高熵碳化物陶瓷的制备工艺。
发明内容
本发明的目的是提供一种(TiNbCrWTa)Cx高熵陶瓷及其制备方法,选用Ti粉和Cr3C2粉相结合,既能够降低烧结过程的烧结温度,又能够保证高熵碳化物的碳源来源,制备的高熵陶瓷具有优异的机械、物理和化学性能。
为了实现上述目的,本发明采用的技术方案是:
一种(TiNbCrWTa)Cx高熵陶瓷,所述高熵陶瓷为单相面心立方结构的陶瓷,包括以下原子比的单质和碳化物:23%的Ti,23%的NbC,23%的WC,23%的TaC,其余为Cr3C2。
一种(TiNbCrWTa)Cx高熵陶瓷的制备方法,包括以下步骤:
S1:将一种金属和四种碳化物原料粉末混合均匀,得到混合粉末A;
S2:通过真空热压烧结技术,将混合粉末A放入导热性能良好的石墨模具中进行固相反应烧结,得到高熵陶瓷(TiNbCrWTa)Cx。
本发明技术方案的进一步改进在于:所述原料粉末分别为Ti粉、NbC粉、Cr3C2粉、WC粉和TaC粉,各粉末纯度均高于99.5%。
本发明技术方案的进一步改进在于:所述原料粉末按金属等原子配比,各原料粉末的比例为Ti:NbC:Cr3C2:WC:TaC=3:3:1:3:3。
本发明技术方案的进一步改进在于:所述步骤S1的具体步骤为:
S11:将各原料粉末按照等金属原子比进行称量;
S12:把S11称量的原料粉末装入玛瑙球磨罐中,球粉比为6:1,采用真空硅脂密封球磨罐,并向球磨罐中充入氩气;
S13:采用行星式球磨机进行球磨,转速为200r/min,球磨时间10h。
本发明技术方案的进一步改进在于:所述Ti粉的粒度为45μm,NbC粉的粒度为4μm,Cr3C2粉的粒度为1μm,WC粉的粒度为1μm,TaC粉的粒度为4μm。
本发明技术方案的进一步改进在于:所述S2石墨模具的内壁及与粉末接触的位置均设有石墨纸。
本发明技术方案的进一步改进在于:所述步骤S2的固相反应烧结过程先采用10MPa的预压力,然后逐渐升压,并采用30MPa保压,在烧结过程中石墨模具的真空度始终保持低于1.8×10-2Pa。
本发明技术方案的进一步改进在于:所述步骤S2中固相反应烧结温度为1350~1650℃,升温速率为10℃/min,保温时间2h;烧结结束后,随炉冷却到室温,取出样品。
由于采用了上述技术方案,本发明取得的技术效果有:
本发明选用Ti粉和Cr3C2粉相结合,既降低了烧结过程的烧结温度,又保证了高熵碳化物的碳源来源,还有利于各元素的扩散,使最终产物有着较高的致密度和均匀性,最终形成具有单相的固溶体,制备的高熵陶瓷具有优异的机械、物理和化学性能。
本发明使用金属单质Ti,同时使用的NbC、Cr3C2、WC、TaC粉末可作为高熵碳化物陶瓷中的碳源,能够有效控制高熵碳化物的碳含量和形成,更有利于元素之间的扩散,制备的高熵陶瓷综合性能好。
本发明制备的高熵陶瓷(TiNbCrWTa)Cx为单相面心立方结构的陶瓷,致密性好、硬度高,应用价值高。
附图说明
图1为本发明制备的(TiNbCrWTa)Cx高熵碳化物陶瓷的XRD图;
图2为本发明制备的(TiNbCrWTa)Cx高熵碳化物陶瓷的SEM和EDS图;
图3为本发明制备的(TiNbCrWTa)Cx陶瓷硬度随烧结温度变化曲线。
具体实施方式
下面结合附图及具体实施例对本发明做进一步详细说明:
一种(TiNbCrWTa)Cx高熵陶瓷为单相面心立方结构。
所述(TiNbCrWTa)Cx高熵陶瓷的制备方法,包括以下步骤:
S1、制备混合粉末A
S11:将各原料粉末按照等金属原子比进行称量,所述原料粉末分别为Ti粉、NbC粉、Cr3C2粉、WC粉和TaC粉,各粉末纯度均高于99.5%;所述Ti粉的粒度为45μm,NbC粉的粒度为4μm,Cr3C2粉的粒度为1μm,WC粉的粒度为1μm,TaC粉的粒度为4μm;
S12:把S11称量的原料粉末装入玛瑙球磨罐中,球粉比为6:1,采用真空硅脂密封球磨罐,并向球磨罐中充入氩气;
S13:采用行星式球磨机进行球磨,转速为200r/min,球磨时间10h。
S2、真空热压烧结制备高熵陶瓷(TiNbCrWTa)Cx
将混合粉末A放入导热性能良好的石墨模具中,并将石墨纸包覆在石墨模具的内壁和与粉末接触的位置。将石墨模具放入真空热压烧结炉中,抽真空使其低于1.8×10-2Pa;烧结温度设置为1350~1650℃,升温速度为10℃/min,在烧结过程中,烧结炉先采用10MPa的预压力,随后逐渐升压,温度升至烧结温度时控制压力到30MPa,并保温2h。
烧结过程结束后,烧结炉随炉冷却,达到室温后取出样品。
实施例1
一种(TiNbCrWTa)Cx高熵陶瓷为单相面心立方结构。
所述(TiNbCrWTa)Cx高熵陶瓷的制备方法,包括以下步骤:
S1、制备混合粉末A
选取所需要的混合粉末:准备初始粉末Ti粉、NbC粉、Cr3C2粉、WC粉和TaC粉,按金属等原子配比进行称量18g,摩尔比例为Ti:NbC:Cr3C2:WC:TaC=3:3:1:3:3。用天平分别称量1.43gTi粉,3.13gNbC粉,1.79g Cr3C2粉,5.86g WC粉和5.77gTaC粉,将这些粉末放置于玛瑙球磨罐中,按球粉比6:1加入108g玛瑙球,大球和小球的质量比为1:1,为防止混合粉末被氧化,向球磨罐中充入氩气,将玛瑙球磨罐放入行星式球磨机中混粉10h,转速200r/min。
S2、真空热压烧结制备高熵陶瓷(TiNbCrWTa)Cx
将混合粉末A放入导热性能良好的石墨模具中,并将石墨纸包覆在石墨模具的内壁和与粉末接触的位置。将石墨模具放入真空热压烧结炉中,抽真空使其低于1.8×10-2Pa。烧结温度设置为1450℃,升温速度为10℃/min,升温过程中分别在600℃、900℃、1250℃保温10min。在烧结过程中,烧结炉先采用10MPa的预压力,随后逐渐升压,温度至1450℃时控制压力到30MPa,并保温2h。
烧结过程结束后,烧结炉随炉冷却,达到室温后取出样品。按照后续实验所需尺寸,用线切割对圆饼状产物进行切割。在此工艺下制备的(TiNbCrWTa)Cx陶瓷的维氏硬度是1745HV0.5。
实施例2:
一种(TiNbCrWTa)Cx高熵陶瓷为单相面心立方结构。
所述(TiNbCrWTa)Cx高熵陶瓷的制备方法,包括以下步骤:
S1、制备混合粉末A
选取所需要的混合粉末:准备少量初始粉末Ti粉、NbC粉、Cr3C2粉、WC粉和TaC粉,按金属等原子配比进行称量18g,比例为Ti:NbC:Cr3C2:WC:TaC=3:3:1:3:3。用天平分别称量1.43gTi粉,3.13gNbC粉,1.79g Cr3C2粉,5.86g WC粉和5.77gTaC粉,将这些粉末放置于玛瑙球磨罐中,按球粉比6:1加入108g玛瑙球,大球和小球的质量比为1:1,为防止混合粉末被氧化,向球磨罐中充入氩气;将玛瑙球磨罐放入行星式球磨机中混粉10h,转速200r/min。
S2、真空热压烧结制备高熵陶瓷(TiNbCrWTa)Cx
将混合粉末A放入导热性能良好的石墨模具中,并将石墨纸包覆在石墨模具的内壁与粉末接触的位置。将石墨模具放入真空热压烧结炉中,抽真空使其低于1.8×10-2Pa。烧结温度设置为1550℃,升温速度为10℃/min,升温过程中分别在600℃、900℃、1250℃保温10min。在烧结过程中,烧结炉先采用10MPa的预压力,随后逐渐升压,温度至1550℃时控制压力到30MPa,并保温2h。
烧结过程结束后,烧结炉随炉冷却,达到室温后取出样品。按照后续实验所需尺寸,用线切割对圆饼状产物进行切割。在此工艺下制备的(TiNbCrWTa)Cx陶瓷的维氏硬度是2214HV0.5。
实施例3:
一种(TiNbCrWTa)Cx高熵陶瓷为单相面心立方结构。
所述(TiNbCrWTa)Cx高熵陶瓷的制备方法,包括以下步骤:
S1、制备混合粉末A
选取所需要的混合粉末:准备少量初始粉末Ti粉、NbC粉、Cr3C2粉、WC粉和TaC粉,按金属等原子配比进行称量18g,比例为Ti:NbC:Cr3C2:WC:TaC=3:3:1:3:3。用天平分别称量1.43gTi粉,3.13gNbC粉,1.79g Cr3C2粉,5.86g WC粉和5.77gTaC粉,将这些粉末放置于玛瑙球磨罐中,按球粉比6:1加入108g玛瑙球,大球和小球的质量比为1:1,为防止混合粉末被氧化,向球磨罐中充入氩气。将玛瑙球磨罐放入行星式球磨机中混粉10h,转速200r/min。
S2、真空热压烧结制备高熵陶瓷(TiNbCrWTa)Cx
将混合粉末放入导热性能良好的石墨模具中,并将石墨纸包覆在石墨模具的内壁和与粉末接触的位置。将石墨模具放入真空热压烧结炉中,抽真空使其低于1.8×10-2Pa。烧结温度设置为1650℃,升温速度为10℃/min,升温过程中分别在600℃、900℃、1250℃保温10min。在烧结过程中,烧结炉先采用10MPa的预压力,随后逐渐升压,温度至1650℃时控制压力到30MPa,并保温2h。
烧结过程结束后,烧结炉随炉冷却,达到室温后取出样品。按照后续实验所需尺寸,用线切割对圆饼状产物进行切割。在此工艺下制备的(TiNbCrWTa)Cx陶瓷的维氏硬度是2501HV0.5。
图1为本发明实例1制备的(TiNbCrWTa)Cx高熵碳化物陶瓷,由图可知,图谱中主要为单一面心立方结构相的衍射峰,没有其他物质的衍射峰,说明制备的(TiNbCrWTa)Cx高熵碳化物陶瓷纯度很高。图2为本发明实例1制备的(TiNbCrWTa)Cx高熵碳化物陶瓷的SEM和EDS图,从SEM图中可以看出该材料有很高的致密度,几乎不存在气孔。EDS图可以看出各元素分布均匀,没有发生元素的偏聚。图3为本发明三个实例对应的硬度变化,可以发现,高熵陶瓷的硬度和温度成正比关系,在1450℃和1650℃之间硬度值有明显的变化是因为在此温度范围内材料的致密化程度大幅度增加,材料开始形成为单一固溶体相结构。
以上公开的本发明优选实例主要是用来阐明本发明的制备原理、材料的组织结构特征和本发明的优点。优选实例并没有详尽的叙述所有实验细节,不限制本发明作为唯一的具体的实施步骤。上述实例只是本发明的一些原理,在不脱离本发明的范围和精神的前提下还可做很多的修改和变化,各种变化和改进,这些变化和改进都落入要求保护的本发明的范围内。本发明要求的保护范围由所附的权利要求书及其等同物界定。
Claims (9)
1.一种(TiNbCrWTa)Cx高熵陶瓷,其特征在于:所述高熵陶瓷为单相面心立方结构的陶瓷,包括以下原子比的单质和碳化物:23%的Ti,23%的NbC, 23%的WC,23%的TaC,其余为Cr3C2。
2.一种制备权利要求1所述的(TiNbCrWTa)Cx高熵陶瓷的方法,其特征在于:包括以下步骤:
S1:将一种金属和四种碳化物原料粉末混合均匀,得到混合粉末A;
S2:通过真空热压烧结技术,将混合粉末A放入导热性能良好的石墨模具中进行固相反应烧结,得到高熵陶瓷(TiNbCrWTa)Cx。
3.根据权利要求2所述的一种(TiNbCrWTa)Cx高熵陶瓷的制备方法,其特征在于:所述原料粉末分别为Ti粉、NbC粉、Cr3C2粉、WC粉和TaC粉,各粉末纯度均高于99.5%。
4.根据权利要求3所述的一种(TiNbCrWTa)Cx高熵陶瓷的制备方法,其特征在于:所述原料粉末按金属等原子配比,各原料粉末的比例为Ti:NbC:Cr3C2: WC:TaC=3:3:1:3:3。
5.根据权利要求4所述的一种(TiNbCrWTa)Cx高熵陶瓷的制备方法,其特征在于:所述步骤S1的具体步骤为:
S11:将各原料粉末按照等金属原子比进行称量;
S12:把S11称量的原料粉末装入玛瑙球磨罐中,球粉比为6:1,采用真空硅脂密封球磨罐,并向球磨罐中充入氩气;
S13:采用行星式球磨机进行球磨,转速为200r/min,球磨时间10h。
6.根据权利要求5所述的一种(TiNbCrWTa)Cx高熵陶瓷的制备方法,其特征在于:所述Ti粉的粒度为45μm,NbC粉的粒度为4μm,Cr3C2粉的粒度为1μm,WC粉的粒度为1μm,TaC粉的粒度为4μm。
7.根据权利要求2所述的一种(TiNbCrWTa)Cx高熵陶瓷的制备方法,其特征在于:所述S2石墨模具的内壁及与粉末接触的位置均设有石墨纸。
8.根据权利要求2所述的一种(TiNbCrWTa)Cx高熵陶瓷的制备方法,其特征在于:所述步骤S2的固相反应烧结过程先采用10MPa的预压力,然后逐渐升压,并采用30MPa保压,在烧结过程中石墨模具的真空度始终保持低于1.8×10-2Pa。
9.根据权利要求8所述的一种(TiNbCrWTa)Cx高熵陶瓷的制备方法,其特征在于:所述步骤S2中固相反应烧结温度为1350~1650℃,升温速率为10 ℃/min,保温时间2h;烧结结束后,随炉冷却到室温,取出样品。
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