CN114402443A - 一种绝缘栅双极型晶体管、电机控制器及汽车 - Google Patents

一种绝缘栅双极型晶体管、电机控制器及汽车 Download PDF

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CN114402443A
CN114402443A CN202080064553.7A CN202080064553A CN114402443A CN 114402443 A CN114402443 A CN 114402443A CN 202080064553 A CN202080064553 A CN 202080064553A CN 114402443 A CN114402443 A CN 114402443A
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layer
electrode
metal electrode
bipolar transistor
insulated gate
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黄伯宁
张泉
杨文韬
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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Abstract

一种绝缘栅双极晶体管、电机控制器及汽车，绝缘栅双极晶体管包括：层叠设置三个器件结构特征层，其中，IGBT器件结构特征层(10)及RC‑IGBT器件结构特征层(30)分列在SJ器件结构特征层(20)的两侧；其中，RC‑IGBT器件结构特征层(30)包括同层设置的集电极(12)及漏极(13)；绝缘栅双极晶体管还包括与集电极(12)层叠且电连接的第一金属电极(15)、与漏极(13)层叠且电连接的第二金属电极(14)，且第一金属电极(15)与第二金属电极(14)之间电隔离。在上述方案中，第一金属电极(15)及第二金属电极(14)可分别与集电极(12)和漏极(13)连接，集电极(12)和漏极(13)可以分别供电，从而增加了绝缘栅双极晶体管的供电方式，进而改善了绝缘栅双极晶体管的控制方式。

Description

PCT国内申请，说明书已公开。

Claims (12)

  1. PCT国内申请，权利要求书已公开。
CN202080064553.7A 2020-03-17 2020-03-17 一种绝缘栅双极型晶体管、电机控制器及汽车 Pending CN114402443A (zh)

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US (1) US20230018508A1 (zh)
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JP4815885B2 (ja) * 2005-06-09 2011-11-16 トヨタ自動車株式会社 半導体装置の制御方法
JP4678547B2 (ja) 2007-11-06 2011-04-27 株式会社デンソー 半導体装置及びその製造方法
US7911023B2 (en) 2007-11-06 2011-03-22 Denso Corporation Semiconductor apparatus including a double-sided electrode element and method for manufacturing the same
JP2012142537A (ja) 2010-12-16 2012-07-26 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタとその製造方法
US9299818B2 (en) 2012-05-29 2016-03-29 Mitsubishi Electric Corporation Insulating gate-type bipolar transistor
JP6648429B2 (ja) * 2014-10-15 2020-02-14 富士電機株式会社 半導体装置
JP2016149430A (ja) 2015-02-12 2016-08-18 株式会社豊田中央研究所 逆導通ｉｇｂｔを備える電子装置
JP6693131B2 (ja) * 2016-01-12 2020-05-13 富士電機株式会社 半導体装置
CN107464842A (zh) * 2017-08-03 2017-12-12 电子科技大学 一种具有集电极槽的超结逆导型igbt
CN107768429B (zh) 2017-10-27 2020-11-13 电子科技大学 一种具有混合导电模式的超结igbt器件

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EP4109559A1 (en) 2022-12-28
JP2023518445A (ja) 2023-05-01
JP7486599B2 (ja) 2024-05-17
US20230018508A1 (en) 2023-01-19
EP4109559A4 (en) 2023-04-05
WO2021184172A1 (zh) 2021-09-23

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