CN113950172A - Graphene-based infrared emission heating device - Google Patents
Graphene-based infrared emission heating device Download PDFInfo
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- CN113950172A CN113950172A CN202010685407.8A CN202010685407A CN113950172A CN 113950172 A CN113950172 A CN 113950172A CN 202010685407 A CN202010685407 A CN 202010685407A CN 113950172 A CN113950172 A CN 113950172A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/145—Carbon only, e.g. carbon black, graphite
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
Abstract
The present disclosure provides a graphene-based infrared emission heating device, comprising: the graphene-based emission source is positioned in a cavity surrounded by the shell and consists of a substrate and graphene on the surface of the substrate; the double electrodes are connected to two ends of the graphene-based emission source to apply voltage to the graphene-based emission source for infrared emission and heating. The device can convert electric energy into infrared rays efficiently, and has higher electric heat conversion efficiency. In addition, the emission source of the device can be adjusted in a larger infrared spectrum range, the requirements of personalized and customized application are met, and the device is particularly suitable for the field with higher requirements on the wavelength peak value range.
Description
Technical Field
The disclosure relates to the technical field of radiation, in particular to a graphene-based infrared emission heating device.
Background
When a certain substance is irradiated by an infrared emission source with continuous wavelength, molecules of the substance absorb a part of light energy to be converted into vibration energy and rotation energy of the molecules, macroscopically, the temperature of the irradiated substance is increased, and the energy transfer does not need a medium.
The far infrared ray is an electromagnetic wave with the wavelength range of 3-1000 mu m, and according to the division of international standard IEC60050-841, the long-wave infrared radiation with the wavelength of more than 4 mu m in vacuum is far infrared radiation, the medium-wave infrared radiation with the wavelength of 2-4 mu m in vacuum is near infrared radiation with the wavelength of less than 2 mu m in vacuum.
Infrared emission heating technology has attracted attention for its high thermal efficiency, no environmental pollution, and guaranteed product quality. Because of these advantages, infrared emission heating technology has been widely used in the fields of coating, plastic processing, automobile manufacturing, food processing, wood processing, pharmacy, printing, paper making, textile printing and dyeing, medical health, machinery manufacturing, chemical engineering, electronics, etc. in recent decades, the technology can be used for drying to improve the drying efficiency from 10% to 60% -70%.
The infrared emission heating technology does not need a transmission medium, can realize the resonance of an emission source spectrum and an absorption spectrum of a heated object, thereby greatly reducing the capacity loss in the heating process, improving the heat energy utilization rate and reducing the pollution, and has the following characteristics: firstly, the relationship between an emission source and a heated substance, wherein the net heat obtained by the heated substance is in direct proportion to the 4-time variance of the temperature; secondly, the net heat obtained by the heated substance is related to the emission spectrum of the heating body and the absorption spectrum characteristic of the heated object; thirdly, the relation characteristics of the directivity, the distance and the shape of the infrared emission heat exchange interaction, namely the angle coefficient characteristic, are related to the blackness of the system; finally, the net heat gain of the heated mass is related to the heat exchange area of interaction.
The traditional infrared emission sources include two types, one is a metal wire which is composed of one or more metal alloys, and under higher voltage, electrons collide with atoms or molecules when moving under the action of an electric field, so that the capacity of the atoms or the molecules is increased, and macroscopically, the temperature is increased. The metal wire is used as an infrared emission source, the wavelength peak value of the emitted rays is short, and only a small part of energy is distributed in a far infrared region, particularly in a range of 7-14 mu m. Therefore, the effective radiation energy ratio is not high, the efficiency is not high when the far infrared heating device is used for far infrared heating, and waste is caused. The other traditional infrared emission heating material is carbon fiber, which is a novel emission source material rapidly developed in recent years, but the carbon fiber material has high resistivity and small and uneven resistance range, so that the relative radiation energy spectrum is limited, and the application of the carbon material emission source is greatly limited.
It is noted that the information disclosed in the foregoing background section is only for enhancement of background understanding of the invention and therefore it may contain information that does not constitute prior art that is already known to a person of ordinary skill in the art.
Disclosure of Invention
It is a primary object of the present disclosure to overcome at least one of the above-mentioned drawbacks of the prior art, and to provide a graphene-based heating device for electroluminescence, which solves the problems of low effective radiant energy ratio, low electric-thermal conversion efficiency, small relative radiation spectrum range, etc. of the existing infrared emitting materials.
In order to achieve the purpose, the following technical scheme is adopted in the disclosure:
the invention provides a graphene-based infrared emission heating device, which comprises: the device comprises a shell, a graphene-based emission source and a double electrode; the graphene-based emission source is positioned in a cavity surrounded by the shell and consists of a substrate and graphene on the surface of the substrate; the double electrodes are connected to two ends of the graphene-based emission source to apply voltage to the graphene-based emission source for infrared emission and heating.
According to one embodiment of the invention, the infrared emission wavelength of the device is between 1 μm and 25 μm.
According to one embodiment of the present invention, the voltage is a direct current voltage of 3V to 24V or an alternating current voltage of 220V to 380V, and the distance between the two electrodes is 1mm to 2000 mm.
According to one embodiment of the invention, the temperature after heating is 30 ℃ to 1000 ℃.
According to one embodiment of the invention, the graphene is a single-layer graphene or a multi-layer graphene, the graphene has a thickness of more than 0.3nm and a resistivity of 10-3Ω·cm～103Ω·cm。
According to one embodiment of the invention, the substrate material is a high temperature resistant material with a working temperature of more than 200 ℃, and the substrate material is selected from one or more of quartz, metal oxide, ceramic, alumina and carbon material.
According to one embodiment of the invention, the housing material is high temperature resistant glass or quartz with a working temperature of greater than 1000 ℃, and the light transmittance of the housing material is greater than 95%.
According to one embodiment of the invention, a vacuum environment is present in the chamber.
According to one embodiment of the present invention, the chamber is filled with an inert gas selected from one or more of nitrogen, argon and helium, in a degree of vacuum of less than 50 Pa.
According to one embodiment of the invention, the graphene is formed on the surface of the substrate by adopting a vacuum sputtering, printing, coating, oxidation reduction or chemical vapor deposition method, and the adhesion level between the graphene and the substrate reaches 5B.
The beneficial effect of this disclosure lies in:
the graphene-based infrared electroluminescence emission heating device can efficiently convert electric energy into infrared rays, and the effective conversion rate is higher than 95%. The device overcomes the defects of low effective radiation energy ratio, low electric-thermal conversion efficiency, small relative radiation spectrum range and the like of the traditional infrared emission material, enables the emission source to be adjustable in a large infrared spectrum range, meets the requirements of personalized and customized application, has higher electrothermal conversion efficiency, can be applied to the industrial fields of printing, rubber and plastic, paper making, electronics, food processing and the like, and is particularly suitable for the field with higher requirement on the wavelength peak range.
Drawings
In order that the embodiments of the disclosure may be more readily understood, a more particular description of the disclosure will be rendered by reference to the appended drawings. It should be noted that, in accordance with industry standard practice, various components are not necessarily drawn to scale and are provided for illustrative purposes only. In fact, the dimensions of the various elements may be arbitrarily expanded or reduced for clarity of discussion.
Fig. 1 is a graphene-based ir electroluminescent heating device according to an embodiment of the present invention.
Wherein the reference numerals are as follows:
100: shell body
200: graphene-based emission source
301. 302: electrode for electrochemical cell
Detailed Description
Exemplary embodiments that embody features and advantages of the present disclosure are described in detail below in the specification. It is to be understood that the disclosure is capable of various modifications in various embodiments without departing from the scope of the disclosure, and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.
In the following description of various exemplary embodiments of the disclosure, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration various exemplary structures, systems, and steps in which aspects of the disclosure may be practiced. It is to be understood that other specific arrangements of parts, structures, example devices, systems, and steps may be utilized, and structural and functional modifications may be made without departing from the scope of the present disclosure. Moreover, although the terms "over," "between," "within," and the like may be used in this specification to describe various example features and elements of the disclosure, these terms are used herein for convenience only, e.g., in accordance with the orientation of the examples described in the figures. Nothing in this specification should be construed as requiring a specific three dimensional orientation of structures in order to fall within the scope of this disclosure.
Fig. 1 is a schematic structural view of a graphene-based infrared electroluminescent heating device according to the present invention. As shown in fig. 1, the graphene-based ir-ir emitting heating device mainly includes a case 100, a graphene-based emission source 200, and dual electrodes 301 and 302. The graphene-based infrared electroluminescent emission heating device provided by the disclosure is exemplified by being applied to the industrial fields of printing, rubber and plastic, paper making, electronics, food processing and the like. Those skilled in the art will readily appreciate that many modifications, additions, substitutions, deletions, or other changes may be made to the specific embodiments described below in order to utilize the subject disclosure in other fields, which changes are within the principles of the devices set forth in this disclosure. The structure, connection mode and functional relationship of each main component of an exemplary embodiment of the graphene-based electric infrared emission heating apparatus proposed by the present disclosure are described in detail below with reference to fig. 1.
As shown in fig. 1, the graphene-based ir electroluminescent heating device of the present invention includes: a housing 100, a graphene-based emission source 200, and dual electrodes 301 and 302. The graphene-based emission source 200 is located in a cavity enclosed by the housing 100. The housing 200 may be made of high temperature resistant glass or transparent quartz, and requires high light transmittance and high temperature resistance, wherein the light transmittance is greater than 95%, and the long-time working temperature is greater than 1000 ℃. The chamber is required to be vacuumized or filled with inert gas, the vacuum degree is less than 50Pa, and the inert gas is nitrogen (N)2) Argon (Ar), helium (He), and the like.
The graphene-based emission source 200 is composed of a substrate and graphene on the surface of the substrate. According to the invention, the existing infrared emission source is generally a metal wire or a carbon fiber material, and the like, but the existing infrared emission source has some defects such as low effective radiance, short service life, slow heating and the like. The inventor of the invention finds that the graphene material is used as an emission source, has high carrier mobility and thermal conductivity, can efficiently send heat energy to the surface, and emits the heat energy in the form of infrared rays at high infrared emissivity, so that a good infrared emission heating effect is obtained. In addition, according to different application scenes and conditions, the preparation process of the graphene can be adjusted to change the resistivity of the graphene, so that the infrared emission wavelength range and the peak value can be adjusted, and the method is particularly suitable for the fields with higher requirements on the wavelength peak value range and special shape requirements.
The graphene can be prepared by a physical process, an oxidation-reduction process, a chemical vapor deposition process, an epitaxy method or an electrochemical process, and the like, and can be single-layer graphene or multi-layer graphene, wherein the thickness of the graphene layer is more than 0.3nm, and the resistivity of the graphene layer is 10-3Ω·cm～103Omega cm adjustable, e.g. 10-3Ω·cm、10-2Ω·cm、10-1The resistivity decreases in Ω · cm, 1 Ω · cm, 10 Ω · cm, 100 Ω · cm, 1000 Ω · cm, and the like, and the peak of the wavelength of the emission spectrum decreases due to an increase in power and an increase in temperature under the same voltage. The substrate material can be quartz, metal oxide, ceramic, alumina, carbon material and other high temperature resistant materials, the long-term service temperature is more than 200 ℃, and the form can be fiber, block or layer.
In some embodiments, the graphene may be formed on the surface of the substrate by vacuum sputtering, printing (e.g., screen printing), coating (e.g., doctor blading), oxidation-reduction or chemical vapor deposition, for example, the graphene may be directly grown on the surface of the quartz fiber by using a chemical vapor deposition process, and the resulting composite fiber bundle serves as a graphene-based emission source. The graphene can also be prepared by a physical mechanical stripping method, then a small amount of adhesive is added to be coated on the surface of a substrate material, a graphene-based emission source is obtained after high-temperature carbonization/graphitization, the high-temperature carbonization/graphitization temperature is about 1000-3000 ℃, in addition, the graphene-based emission source can also be obtained by a heat setting treatment technology, the heat setting process is to enable the emission source to keep a certain specific shape, for example, the emission source needs larger radiation power but the length or the area is not large, the linear emission source needs to be made into a spiral shape and kept for a long time, so that the purpose of increasing the actual action length on the premise of keeping the apparent length unchanged is achieved, and the heat setting treatment temperature is generally 40-100 ℃. Before the graphene layer is formed on the substrate, pretreatment is required to remove impurities on the surface of the substrate and smooth the surface, and the treatment temperature is 20-2000 ℃.
In some embodiments, the adhesion between the graphene and the substrate needs to be 5B (hundred lattice knife test) to prevent the graphene from falling off the substrate during operation.
As shown in fig. 1, the dual electrodes 301 and 302 are respectively connected to both ends of the graphene-based emission source 200 to apply a voltage to the graphene-based emission source to perform infrared emission and generate heat. When current passes through the graphene through the electrodes, carbon atoms are excited, and the emitted infrared wavelength can be controlled by controlling the applied voltage, so that the infrared emission wavelength in a corresponding range is obtained, and the required heating temperature is generated.
In some embodiments, the applied voltage is a dc voltage of 3V to 24V, such as 3V, 5V, 7V, 10V, 15V, 18V, 20V, 23V, etc., or an ac voltage of 220V to 380V, such as 220V, 260V, 280V, 300V, 320V, 370V, etc., when the applied voltage is a low voltage, the generated infrared wavelength is larger and the emitted energy is lower; when the applied voltage is relatively high, the generated infrared wavelength is larger and the emitted energy is higher. The temperature of the heat generated after the voltage is applied can reach 30-1000 ℃ according to different substrate materials.
In some embodiments, the distance between the two electrodes 301, 302 may affect the emission power of the device, and is typically 1mm to 2000mm, for example, 1mm, 20mm, 50mm, 120mm, 500mm, 700mm, 850mm, etc.
In conclusion, the graphene-based electric infrared emission heating device can efficiently convert electric energy into infrared rays, the effective conversion rate is higher than 95%, and the wavelength peak value of the emitted infrared rays is between 1 and 25 micrometers. The device can be applied to the industrial fields of printing, rubber and plastic, paper making, electronics, food processing and the like, is particularly suitable for the field with higher requirement on the wavelength peak range, overcomes the defects of low effective radiation energy ratio, low electric-thermal conversion efficiency, small relative radiation spectrum range and the like of the traditional infrared emission material, enables the emission source to be adjustable in a larger infrared spectrum range, meets the requirements of personalized and customized application, and has higher electrothermal conversion efficiency.
The invention will be further illustrated by the following examples, but is not to be construed as being limited thereto. Unless otherwise specified, reagents, materials and the like used in the present invention are commercially available.
Example 1
1) And (3) taking methane as a carbon source, and carrying out chemical vapor deposition on the surface of the quartz fiber to directly grow graphene so as to obtain the graphene quartz fiber bundle. Wherein, the chemical vapor deposition temperature is 1050 ℃, Ar: h2：CH4The flow ratio of (1) is 500sccm, 300sccm, 200 sccm. The obtained graphene quartz fiber bundle is used as an emission source, and the thickness of the graphene layer is 10 nm.
2) The resistivity of the single fiber of the quartz fiber bundle was 0.1. omega. cm, and the length of the fiber bundle was 10 cm. A high-temperature-resistant quartz tube is used as a cavity shell, argon is filled after vacuum pumping, electrodes at two ends are connected with DC 24v voltage, the temperature of the device rises to 260 ℃ after 1 minute, and the peak value of infrared wavelength is about 20 microns.
Example 2
1) The graphene is prepared by a physical mechanical stripping process, specifically, ultrasonic dispersion is carried out on graphite for 0.5h, high shear stripping is carried out for 1h, and a dispersing agent is 0.5% of polyoxyethylene ether. The obtained graphene has the sheet diameter range of 1-10 mu m, is multilayer graphene, has the thickness of 100 mu m and the resistivity of 102 omega cm, is coated on the surface of ceramic after being added with a small amount of adhesive, and is used as an infrared emission source after being carbonized at high temperature, and the length of the infrared emission source is 30 cm.
2) A high-temperature-resistant quartz tube is used as a cavity shell, argon is filled after vacuum pumping, electrodes at two ends are connected with alternating current 220v voltage, the temperature of the device rises to 950 ℃ after 1 minute, and the peak value of infrared wavelength is 1-3 microns.
It should be noted by those skilled in the art that the described embodiments of the present invention are merely exemplary and that various other substitutions, alterations, and modifications may be made within the scope of the present invention. Accordingly, the present invention is not limited to the above-described embodiments, but is only limited by the claims.
Claims (10)
1. A graphene-based electro-infrared emission heating device, comprising:
a housing;
the graphene-based emission source is positioned in a cavity enclosed by the shell and consists of a substrate and graphene on the surface of the substrate; and
and the double electrodes are connected to two ends of the graphene-based emission source so as to apply voltage to the graphene-based emission source to perform infrared emission and generate heat.
2. The device of claim 1, wherein the device has an infrared emission wavelength of 1 μm to 25 μm.
3. The device of claim 1, wherein the voltage is a direct current voltage of 3V to 24V or an alternating current voltage of 220V to 380V, and the distance between the two electrodes is 1mm to 2000 mm.
4. The device of claim 1, wherein the post-heat generation temperature is 30 ℃ to 1000 ℃.
5. The apparatus of claim 1, wherein the graphene is single-layer graphene or multi-layer graphene, wherein the graphene layers have a thickness of greater than 0.3nm and a resistivity of 10-3Ω·cm～103Ω·cm。
6. The apparatus of claim 1, wherein the substrate material is a high temperature resistant material with a working temperature greater than 200 ℃, and the substrate material is selected from one or more of quartz, metals, metal oxides, ceramics, alumina, and carbon materials.
7. The device of claim 1, wherein the housing material is high temperature glass or quartz with an operating temperature greater than 1000 ℃, and the light transmittance of the housing material is greater than 95%.
8. The apparatus of claim 1, wherein a vacuum environment is present in the chamber.
9. The apparatus of claim 1, wherein the chamber is filled with an inert gas with a vacuum degree of less than 50Pa, the inert gas being selected from one or more of nitrogen, argon and helium.
10. The device of claim 1, wherein the graphene is formed on the surface of the substrate by vacuum sputtering, printing, coating, oxidation-reduction or chemical vapor deposition, and the adhesion between the graphene and the substrate is up to 5B.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114768104A (en) * | 2022-03-24 | 2022-07-22 | 安徽格兰科新材料技术有限公司 | Preparation method of graphene heating body with adjustable broadband thermal radiation emissivity |
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